JP2003017644A - Method of fabricating resin-sealed semiconductor device - Google Patents

Method of fabricating resin-sealed semiconductor device

Info

Publication number
JP2003017644A
JP2003017644A JP2001196056A JP2001196056A JP2003017644A JP 2003017644 A JP2003017644 A JP 2003017644A JP 2001196056 A JP2001196056 A JP 2001196056A JP 2001196056 A JP2001196056 A JP 2001196056A JP 2003017644 A JP2003017644 A JP 2003017644A
Authority
JP
Japan
Prior art keywords
resin
resin film
lead frame
semiconductor device
frame
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001196056A
Other languages
Japanese (ja)
Other versions
JP4590788B2 (en
Inventor
Yukio Yamaguchi
幸雄 山口
Takahiro Matsuo
隆広 松尾
Osamu Adachi
修 安達
Kunikazu Takemura
邦和 竹村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP2001196056A priority Critical patent/JP4590788B2/en
Publication of JP2003017644A publication Critical patent/JP2003017644A/en
Application granted granted Critical
Publication of JP4590788B2 publication Critical patent/JP4590788B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H01L2221/68386—Separation by peeling
    • H01L2221/6839—Separation by peeling using peeling wedge or knife or bar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01—ELECTRIC ELEMENTS
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress

Abstract

PROBLEM TO BE SOLVED: To solve a problem that bonding force of a resin film attached to the rear surface of a lead frame is considerably large in order to prevent generation of resin burrs and thereby it is difficult to remove the resin film from the lead frame. SOLUTION: A heating block 14 is placed in contact with a sealing resin 15 of a resin-sealed semiconductor device, an end of a resin film 7 is held with a clamp 16 under the condition that close bonding force of the resin film 7 is lowered, and the resin film 7 is easily and surely removed from the read frame 6.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【発明の属する技術分野】本発明の樹脂封止型半導体装
置の製造方法は、リードフレームに半導体素子が搭載さ
れ、封止樹脂によって封止された樹脂封止型半導体装置
の製造方法に関するものであり、特に、リードフレーム
の裏面に貼り付けた樹脂フィルムを、安定して剥がすた
めの樹脂封止型半導体装置の製造方法に関するものであ
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a resin-encapsulated semiconductor device in which a semiconductor element is mounted on a lead frame and encapsulated with a sealing resin. In particular, the present invention relates to a method for manufacturing a resin-encapsulated semiconductor device for stably peeling off a resin film attached to the back surface of a lead frame.

【０００２】[0002]

【従来の技術】近年、電子機器の小型化に対応するため
に、電子機器に搭載される半導体装置を高密度に実装す
ることが要求され、それにともなって、半導体装置の小
型、薄型化が加速度的に進んでいる。2. Description of the Related Art In recent years, in order to cope with downsizing of electronic equipment, it is required to mount semiconductor devices mounted on the electronic equipment at a high density, and accordingly, miniaturization and thinning of the semiconductor equipment are accelerated. Is progressing.

【０００３】一方、リードフレームに半導体素子が搭載
され、リードフレームに搭載された半導体素子が封止樹
脂によって封止された樹脂封止型半導体装置の開発も進
展しているが、封止工程における封止樹脂のリードフレ
ームの裏面への回りこみによる樹脂バリ発生の問題を有
していた。On the other hand, the development of a resin-sealed semiconductor device in which a semiconductor element is mounted on a lead frame and the semiconductor element mounted on the lead frame is sealed with a sealing resin is progressing. There is a problem of resin burr generation due to the encapsulation resin sneaking into the back surface of the lead frame.

【０００４】この樹脂バリ発生に対する有効な手法とし
て、封止工程前にリードフレームの裏面に樹脂フィルム
を貼り付けておくことで、封止工程で封止樹脂がリード
フレームの裏面に回りこまなくなり、樹脂バリの発生を
防止できた。As an effective method for the occurrence of the resin burr, a resin film is attached to the back surface of the lead frame before the sealing step, so that the sealing resin does not go around to the back surface of the lead frame in the sealing step. It was possible to prevent the occurrence of resin burr.

【０００５】以下、従来の樹脂封止型半導体装置につい
て説明する。A conventional resin-sealed semiconductor device will be described below.

【０００６】図８は、従来の樹脂封止型半導体装置の製
造方法を示す断面図である。FIG. 8 is a cross-sectional view showing a conventional method for manufacturing a resin-sealed semiconductor device.

【０００７】図８に示すように、ステージ１に、半導体
装置の樹脂封止部側を下側にして、リードフレーム２の
裏面を上側にして、樹脂封止型半導体装置３が載置され
ている。封止工程の前に樹脂バリ発生防止のためにリー
ドフレーム２の裏面に貼り付けられた樹脂フィルム４
を、封止工程の後に剥がす状態を示している。すなわ
ち、樹脂フィルム４の一端をクランプ５により把持し、
樹脂フィルム４の上方でリードフレーム２に平行に引っ
張ることで、樹脂フィルム４をリードフレーム２の裏面
から剥がす。As shown in FIG. 8, the resin-sealed semiconductor device 3 is mounted on the stage 1 with the resin-sealed portion side of the semiconductor device facing down and the back surface of the lead frame 2 facing up. There is. The resin film 4 attached to the back surface of the lead frame 2 before the sealing step to prevent the occurrence of resin burr.
Shows the state of peeling off after the sealing step. That is, one end of the resin film 4 is held by the clamp 5,
The resin film 4 is peeled from the back surface of the lead frame 2 by pulling the resin film 4 above the resin film 4 in parallel with the lead frame 2.

【０００８】[0008]

【発明が解決しようとする課題】しかしながら、前記従
来の樹脂封止型半導体装置の製造方法は、封止樹脂のリ
ードフレーム裏面への回りこみを防止するために、リー
ドフレームに対する樹脂フィルムの密着力は非常に大き
く、リードフレームから樹脂フィルムを安定して剥がす
ことが困難であった。従来のような方法で、樹脂フィル
ムをリードフレームの裏面から剥がそうとすると、リー
ドフレームの塑性変形、封止樹脂の一部が樹脂フィルム
に貼り付いてしまう、樹脂フィルムの剥がし速度に限界
がある等の課題があった。However, in the conventional method for manufacturing a resin-encapsulated semiconductor device described above, the adhesion of the resin film to the lead frame is prevented in order to prevent the encapsulation resin from wrapping around to the back surface of the lead frame. Was very large, and it was difficult to stably peel the resin film from the lead frame. If you try to peel the resin film from the backside of the lead frame by the conventional method, plastic deformation of the lead frame, a part of the sealing resin will stick to the resin film, there is a limit to the peeling speed of the resin film. There was a problem such as.

【０００９】本発明の樹脂封止型半導体装置の製造方法
は、前記従来の樹脂封止型半導体装置の製造方法による
課題を解決するものであり、リードフレームの裏面に貼
り付けられた樹脂フィルムを容易に、かつ、確実に剥が
すことを目的とするものである。A method of manufacturing a resin-encapsulated semiconductor device according to the present invention solves the problems associated with the conventional method of manufacturing a resin-encapsulated semiconductor device described above, in which a resin film attached to the back surface of a lead frame is used. It is intended to be easily and surely peeled off.

【００１０】[0010]

【課題を解決するための手段】前記従来の課題を解決す
るために、本発明の樹脂封止型半導体装置の製造方法
は、フレーム枠と、前記フレーム枠の領域内に設けられ
た開口部の中央部付近に設けられたダイパッド部と、前
記ダイパッド部に対してその各先端部が延在して配置さ
れた信号接続用リード部と、前記信号接続用リード部に
連続して接続した外部端子部と、前記フレーム枠、前記
外部端子部およびダイパッド部のそれぞれの底面に接着
した樹脂フィルムとよりなるリードフレームを用意する
工程と、前記ダイパッド部上に半導体素子の裏面を接着
する工程と、前記半導体素子の電極と前記信号接続用リ
ードとを金属細線により電気的に接続する工程と、前記
リードフレームの前記半導体素子が接着された側で前記
半導体素子および前記金属細線を封止樹脂により封止す
る工程と、前記樹脂フィルムを加熱しながらリードフレ
ームから剥がす工程とからなる。In order to solve the above-mentioned conventional problems, a method of manufacturing a resin-encapsulated semiconductor device according to the present invention includes a frame frame and an opening provided in the region of the frame frame. A die pad portion provided in the vicinity of the central portion, a signal connecting lead portion in which each tip portion is arranged to extend with respect to the die pad portion, and an external terminal continuously connected to the signal connecting lead portion. Section, the frame frame, a step of preparing a lead frame consisting of a resin film adhered to the respective bottom surfaces of the external terminal section and the die pad section, a step of adhering the back surface of the semiconductor element on the die pad section, A step of electrically connecting the electrode of the semiconductor element and the signal connecting lead with a thin metal wire; and the semiconductor element and the front side on the side of the lead frame to which the semiconductor element is bonded. A step of sealing the thin metal wire with a sealing resin, and a step of peeling from the lead frame while heating the resin film.

【００１１】また、樹脂フィルムを加熱しながらリード
フレームから剥がす工程は、前記樹脂フィルムを１５０
〜２００[℃]に加熱しながら前記リードフレームから剥
がす。Further, in the step of peeling the resin film from the lead frame while heating the resin film,
It is peeled from the lead frame while being heated to about 200 [° C.].

【００１２】これにより、樹脂フィルムの表面の接着剤
のガラス転移温度付近と同程度の温度にまで加熱される
ので、樹脂フィルムの接着剤の接着力が低下し、容易か
つ確実に、樹脂フィルムをリードフレームから剥がすこ
とができる。As a result, the adhesive on the surface of the resin film is heated to about the same temperature as the glass transition temperature of the adhesive, so that the adhesive strength of the adhesive on the resin film decreases, and the resin film can be easily and surely attached. It can be removed from the lead frame.

【００１３】また、樹脂フィルムを加熱しながらリード
フレームから剥がす工程は、加熱したブロックを樹脂封
止面に接触させて前記樹脂フィルムを前記リードフレー
ムから剥がす。Further, in the step of peeling the resin film from the lead frame while heating, the heated block is brought into contact with the resin sealing surface to peel the resin film from the lead frame.

【００１４】また、リードフレームを用意する工程で
は、樹脂フィルムは前記リードフレームの端部を除く領
域に貼り付けられている。In the step of preparing the lead frame, the resin film is attached to the area of the lead frame excluding the end portions.

【００１５】また、リードフレームを用意する工程で
は、前記リードフレームの端部が前記リードフレームの
裏面側からハーフエッチングされ、樹脂フィルムの端部
と前記リードフレームのハーフエッチングされた部分と
の間は分離している。Further, in the step of preparing the lead frame, the end portion of the lead frame is half-etched from the rear surface side of the lead frame, and the end portion of the resin film and the half-etched portion of the lead frame are half-etched. Separated.

【００１６】また、リードフレームを用意する工程で
は、引っ張り強さが２０〜４０[Ｋｇ／ｍｍ2]の樹脂フ
ィルムを前記リードフレームの裏面に貼り付ける。In the step of preparing the lead frame, a resin film having a tensile strength of 20 to 40 [Kg / mm 2 ] is attached to the back surface of the lead frame.

【００１７】また、樹脂フィルムを加熱しながら前記リ
ードフレームから剥がす工程は、加熱したブロックを樹
脂フィルムに接触させて前記樹脂フィルムを前記リード
フレームから剥がす。In the step of peeling the resin film from the lead frame while heating, the heated block is brought into contact with the resin film to peel the resin film from the lead frame.

【００１８】また、樹脂フィルムを加熱しながらリード
フレームから剥がす工程は、前記樹脂フィルムの端部を
把持するクランプを上昇させる工程と、前記樹脂フィル
ムの端部を把持したクランプをリードフレームに平行に
移動させて、前記樹脂フィルムを前記リードフレームか
ら剥がす。In addition, the step of peeling the resin film from the lead frame while heating is performed by raising the clamp for holding the end portion of the resin film and paralleling the clamp holding the end portion of the resin film to the lead frame. By moving, the resin film is peeled off from the lead frame.

【００１９】また、加熱したブロックを樹脂フィルムに
沿って移動させ、前記樹脂フィルムの前記加熱ブロック
が通過した部分をリードフレームから剥がす。Further, the heated block is moved along the resin film, and the portion of the resin film that has passed through the heating block is peeled off from the lead frame.

【００２０】また、加熱したブロック近傍の樹脂フィル
ムに室温以上の空気を吹き付ける。Air above room temperature is blown onto the resin film near the heated block.

【００２１】以上、本発明の樹脂封止型半導体装置の製
造方法は、樹脂フィルムをリードフレームから容易に確
実に剥がすことができ、リードフレームの塑性変形など
の不具合がなくなる。As described above, according to the method of manufacturing the resin-encapsulated semiconductor device of the present invention, the resin film can be easily and surely peeled off from the lead frame, and problems such as plastic deformation of the lead frame are eliminated.

【００２２】[0022]

【発明の実施の形態】以下、本発明の樹脂封止型半導体
装置の製造方法の一実施形態について図面を参照しなが
ら説明する。BEST MODE FOR CARRYING OUT THE INVENTION An embodiment of a method of manufacturing a resin-sealed semiconductor device of the present invention will be described below with reference to the drawings.

【００２３】図１および図２は、本実施形態の樹脂封止
型半導体装置の各工程を示す断面図である。1 and 2 are cross-sectional views showing respective steps of the resin-sealed semiconductor device of this embodiment.

【００２４】まず、図１（ａ）に示すように、リードフ
レーム６を用意するが、本実施形態で使用するリードフ
レームについて説明する。なお、リードフレームの詳細
部は図示していない。First, as shown in FIG. 1A, a lead frame 6 is prepared. The lead frame used in this embodiment will be described. The detailed portion of the lead frame is not shown.

【００２５】本実施形態で使用するリードフレーム６
は、フレーム枠と、前記フレーム枠の領域内に設けられ
た開口部の中央部付近に設けられたダイパッド部と、前
記ダイパッド部に対してその各先端部が延在して配置さ
れた信号接続用リード部と、前記信号接続用リード部に
連続して接続した外部端子部と、前記フレーム枠、前記
外部端子部およびダイパッド部のそれぞれの底面に接着
した樹脂フィルムとよりなるリードフレームである。Lead frame 6 used in this embodiment
Is a frame frame, a die pad part provided in the vicinity of a central part of an opening provided in the region of the frame frame, and a signal connection in which each tip part of the die pad part is extended from the die pad part. Lead frame, an external terminal portion continuously connected to the signal connecting lead portion, and a resin film adhered to the bottom surface of each of the frame frame, the external terminal portion, and the die pad portion.

【００２６】本実施形態で使用するリードフレーム６の
特徴的構成は、リードフレーム６の裏面にポリイミドか
らなる樹脂フィルム７が貼り付けられていることであ
る。ここで、リードフレーム６の裏面に樹脂フィルム７
を貼り付けるのは、封止工程で封止樹脂がリードフレー
ム６の裏面に回りこんで樹脂バリの発生とならないよう
にするためである。A characteristic structure of the lead frame 6 used in this embodiment is that a resin film 7 made of polyimide is attached to the back surface of the lead frame 6. Here, the resin film 7 is formed on the back surface of the lead frame 6.
Is attached so that the encapsulating resin does not go around to the back surface of the lead frame 6 in the encapsulating step and generate resin burrs.

【００２７】なお、リードフレーム６は、樹脂封止の
際、封止樹脂の流出を止めるタイバーを設けていない。
また、リードフレーム６は、銅（Ｃｕ）素材のフレーム
に対して、下地メッキとしてニッケル（Ｎｉ）層が、そ
の上にパラジウム（Ｐｄ）層が、最上層に薄膜の金（Ａ
ｕ）層がそれぞれメッキされた３層の金属メッキ済みの
リードフレームである。ただし、銅（Ｃｕ）素材以外に
も４２アロイ材等の素材を使用でき、また、ニッケル
（Ｎｉ），パラジウム（Ｐｄ），金（Ａｕ）以外の貴金
属メッキが施されていてもよく、さらに、必ずしも３層
メッキでなくてもよい。The lead frame 6 is not provided with a tie bar for stopping the outflow of the sealing resin when the resin is sealed.
Further, the lead frame 6 has a nickel (Ni) layer as a base plating, a palladium (Pd) layer thereon and a thin film of gold (A) as a top layer, with respect to a frame made of a copper (Cu) material.
The u) layer is a three-layer metal-plated lead frame, each of which is plated. However, other than copper (Cu) material, 42 alloy material and the like can be used, and may be plated with a noble metal other than nickel (Ni), palladium (Pd), and gold (Au). It does not necessarily have to be three-layer plating.

【００２８】次に、図１（ｂ）に示すように、リードフ
レーム６のダイパッド部の上面と半導体素子８の裏面と
を接着剤９により接着する。Next, as shown in FIG. 1B, the upper surface of the die pad portion of the lead frame 6 and the back surface of the semiconductor element 8 are bonded with an adhesive 9.

【００２９】次に、図１（ｃ）に示すように、ダイパッ
ド部上に接着した半導体素子８の電極と信号接続用リー
ド部とを金属細線１０により電気的に接続する。Next, as shown in FIG. 1C, the electrodes of the semiconductor element 8 adhered on the die pad portion and the signal connecting lead portion are electrically connected by the fine metal wire 10.

【００３０】次に、図２（ａ）に示すように、リードフ
レーム６のダイパッド部上に半導体素子８が接着され、
リードフレーム６の裏面に樹脂フィルム７が貼り付けら
れた状態で、リードフレーム６を封止金型１１のキャビ
ティー部１２内に複数個収納し、封止金型１１でリード
フレーム６の外枠を樹脂フィルム７とともに押圧して、
封止金型１１内に封止樹脂１３を流し込んで樹脂封止を
行い、リードフレーム６の半導体素子８が接着された側
を封止樹脂１３で封止する。Next, as shown in FIG. 2A, the semiconductor element 8 is bonded onto the die pad portion of the lead frame 6,
With the resin film 7 attached to the back surface of the lead frame 6, a plurality of lead frames 6 are housed in the cavity 12 of the sealing mold 11, and the outer frame of the lead frame 6 is sealed by the sealing mold 11. Is pressed together with the resin film 7,
The sealing resin 13 is poured into the sealing mold 11 to perform resin sealing, and the side of the lead frame 6 to which the semiconductor element 8 is bonded is sealed with the sealing resin 13.

【００３１】この樹脂フィルム７は、特にダイパッド部
の下面側（ダイパッド露出型の場合）および信号接続用
リード部の裏面側に樹脂封止時に封止樹脂１３が回り込
まないようにするマスク的な役割を果たすが、リードフ
レーム６の底面のハーフエッチ部には封止樹脂が注入さ
れる。この樹脂フィルム７の存在によって、ダイパッド
部の下面（ダイパッド露出型の場合）や、信号接続用リ
ード部の裏面に樹脂バリが形成されるのを防止すること
ができる。The resin film 7 serves as a mask to prevent the sealing resin 13 from wrapping around the lower surface of the die pad portion (in the case of the die pad exposed type) and the rear surface of the signal connection lead portion during resin sealing. However, the sealing resin is injected into the half-etched portion on the bottom surface of the lead frame 6. Due to the presence of the resin film 7, it is possible to prevent the resin burr from being formed on the lower surface of the die pad portion (in the case of the die pad exposed type) or the rear surface of the signal connection lead portion.

【００３２】また、樹脂フィルム７は、ポリエチレンテ
レフタレート，ポリイミド，ポリカーボネートなどを主
成分とする樹脂をベースとしたフィルムまたはテープ状
の部材で接着剤が塗布されており、樹脂封止後は熱によ
り接着力を弱めて、リードフレーム６から剥がすことが
でき、信号接続用リード部の物理的位置（ピッチ）を適
切に保ち、金属細線１０の接続工程においては高温下で
適切な変形に耐え、常温下での復元性があり、また接続
工程、樹脂封止時における高温環境に耐性があるものが
望ましい。The resin film 7 is a film or tape-shaped member based on a resin containing polyethylene terephthalate, polyimide, polycarbonate or the like as a main component, and an adhesive is applied thereto. It can be peeled off from the lead frame 6 by weakening the force, the physical position (pitch) of the lead portion for signal connection is properly maintained, and in the connection process of the metal thin wire 10, it withstands appropriate deformation at high temperature and at normal temperature. It is desirable that the material has resilience in the above and is resistant to a high temperature environment during the connection step and resin sealing.

【００３３】なお、本実施形態では、ポリイミドを主成
分とした接着性を有した樹脂フィルム７を用い、厚みは
２５［μｍ］のフィルムを用いた。In this embodiment, an adhesive resin film 7 containing polyimide as a main component is used, and a film having a thickness of 25 [μm] is used.

【００３４】次に、図２（ｂ）に示すように、ダイパッ
ド部、信号接続用リード部の裏面に貼付した樹脂フィル
ムを１５０〜２００[℃]に加熱することで、リードフレ
ーム６に対する樹脂フィルムの接着力を弱める。そし
て、ピールオフしてリードフレーム６から樹脂フィルム
を剥がすことで、封止樹脂１３の裏面より露出した外部
端子部、ダイパッド部の構造が形成される。ここで、本
実施形態で用いる樹脂フィルムの表面の接着剤のガラス
転移温度は、１５０〜２００[℃]の範囲内にあり、樹脂
フィルムを１５０〜２００[℃]に加熱することにより、
樹脂フィルムの接着剤のガラス転移温度と同程度となっ
て、接着剤の接着力が低下する。したがって、樹脂フィ
ルムをリードフレームから、容易かつ確実に剥がすこと
ができる。Next, as shown in FIG. 2B, the resin film attached to the back surfaces of the die pad portion and the signal connecting lead portion is heated to 150 to 200 [° C.], so that the resin film for the lead frame 6 is heated. Weakens the adhesive strength of. Then, by peeling off and peeling off the resin film from the lead frame 6, the structure of the external terminal portion and the die pad portion exposed from the back surface of the sealing resin 13 is formed. Here, the glass transition temperature of the adhesive on the surface of the resin film used in the present embodiment is in the range of 150 to 200 [° C], and by heating the resin film to 150 to 200 [° C],
The glass transition temperature of the adhesive of the resin film becomes almost the same, and the adhesive strength of the adhesive decreases. Therefore, the resin film can be easily and surely peeled off from the lead frame.

【００３５】最後に、図２（ｃ）に示すように、半導体
素子８単位ごとにリードフレーム６および封止樹脂１３
を切削刃（ブレード）により分離することにより、外部
端子部、ダイパッド部が封止樹脂１３の下面から露出し
た樹脂封止型半導体装置が完成する。また、ダイパッド
部をアップセットすることにより樹脂フィルム７よりダ
イパッドが離れ、封止樹脂内に内蔵された半導体装置の
製造も可能である。Finally, as shown in FIG. 2C, the lead frame 6 and the sealing resin 13 are provided for each unit of the semiconductor elements 8.
By separating with a cutting blade (blade), the resin-sealed semiconductor device in which the external terminal portion and the die pad portion are exposed from the lower surface of the sealing resin 13 is completed. Further, by upsetting the die pad portion, the die pad is separated from the resin film 7, and it is possible to manufacture a semiconductor device embedded in the sealing resin.

【００３６】以上、本実施形態の樹脂封止型半導体装置
の製造方法により、リードフレームの裏面に貼り付けら
れた樹脂フィルムを加熱しながら剥がすことで、リード
フレームの裏面から樹脂フィルムを容易に確実に剥がす
ことができるので、リードフレームの塑性変形等の不具
合が発生することはない。As described above, according to the method for manufacturing the resin-encapsulated semiconductor device of the present embodiment, the resin film attached to the back surface of the lead frame is peeled off while heating, so that the resin film can be easily and reliably removed from the back surface of the lead frame. Since it can be peeled off, problems such as plastic deformation of the lead frame do not occur.

【００３７】以下、リードフレームからの樹脂フィルム
の剥がし方法について、特に、前記の図２（ｂ）に示す
工程における別の実施形態を、第１の実施形態〜第８の
実施形態として説明する。なお、樹脂フィルム７を剥が
す前に、リードフレーム６のダイパッドと半導体素子の
裏面とが接着され、半導体素子の電極と各リードとが金
属細線で接続され、リードフレーム６の半導体素子が接
着された側で、半導体素子および金属細線が封止樹脂に
より封止されているものとする。With respect to the method of peeling the resin film from the lead frame, another embodiment of the step shown in FIG. 2B will be described below as the first to eighth embodiments. Before the resin film 7 was peeled off, the die pad of the lead frame 6 and the back surface of the semiconductor element were bonded, the electrodes of the semiconductor element and the leads were connected by metal wires, and the semiconductor element of the lead frame 6 was bonded. On the side, the semiconductor element and the thin metal wire are sealed with a sealing resin.

【００３８】まず、第１の実施形態について説明する。First, the first embodiment will be described.

【００３９】図３（ａ）は、本実施形態の樹脂封止型半
導体装置の製造方法を示す断面図である。FIG. 3A is a sectional view showing the method of manufacturing the resin-sealed semiconductor device of this embodiment.

【００４０】図３（ａ）に示すように、１５０〜２００
[℃]の加熱した加熱ブロック１４を、半導体素子および
金属細線を封止樹脂で封止した封止樹脂部１５に接触さ
せ、クランプ１６により樹脂フィルム７の端部を把持
し、リードフレーム６に沿ってクランプ１６を移動させ
ることで樹脂フィルム７をリードフレーム６の裏面から
剥がす。ここで、加熱ブロック１４の温度が、１５０
[℃]よりも低い場合は、樹脂フィルム７の接着剤がリー
ドフレーム６に残留する。また、加熱ブロック１４の温
度が２００[℃]よりも高い場合は、封止樹脂部１５とリ
ードフレーム６との界面が剥離してしまう。樹脂フィル
ム７の接着剤がリードフレーム６に残らず、また、樹脂
フィルム７を破ることなく除去するには熱容量の大きな
封止樹脂部１５から熱を伝える必要があり、樹脂フィル
ム７の温度を安定領域に保つ必要がある。As shown in FIG. 3A, 150 to 200
The heating block 14 heated to [° C.] is brought into contact with the encapsulating resin portion 15 in which the semiconductor element and the thin metal wire are encapsulated with an encapsulating resin, and the end of the resin film 7 is held by the clamp 16 and the lead frame 6 is attached. The resin film 7 is peeled off from the back surface of the lead frame 6 by moving the clamp 16 along. Here, the temperature of the heating block 14 is 150
When the temperature is lower than [° C.], the adhesive agent of the resin film 7 remains on the lead frame 6. Further, when the temperature of the heating block 14 is higher than 200 [° C.], the interface between the encapsulating resin portion 15 and the lead frame 6 is peeled off. The adhesive of the resin film 7 does not remain on the lead frame 6, and in order to remove the resin film 7 without breaking it, it is necessary to transfer heat from the encapsulating resin portion 15 having a large heat capacity, and the temperature of the resin film 7 is stabilized. Need to keep in the area.

【００４１】また、リードフレームの端部には、切り欠
き１７を有し、この切り欠き１７にクランプを合わせる
ことで、容易にクランプで樹脂フィルムを把持すること
ができる。Further, the end portion of the lead frame has a notch 17, and a resin film can be easily grasped by the clamp by aligning the clamp with the notch 17.

【００４２】本実施形態では、樹脂封止された樹脂封止
体を加熱したブロックに載置し、封止樹脂部を直接加熱
ブロックに接触させることで、リードフレームの裏面と
樹脂フィルムとの接着面を加熱し、リードフレームの裏
面と樹脂フィルムとの接着力を低下させた状態で、樹脂
フィルムをリードフレームの裏面から剥がすことができ
る。In this embodiment, the resin-sealed resin-sealed body is placed on a heated block, and the sealing resin portion is brought into direct contact with the heating block to bond the back surface of the lead frame to the resin film. The resin film can be peeled off from the back surface of the lead frame while heating the surface to reduce the adhesive force between the back surface of the lead frame and the resin film.

【００４３】次に、第２の実施形態について説明する。Next, a second embodiment will be described.

【００４４】次に、樹脂フィルムの剥がし方法の第２の
実施形態について説明する。Next, a second embodiment of the resin film peeling method will be described.

【００４５】図３（ｂ）は、本実施形態の樹脂フィルム
の剥がし方法を示す断面図である。FIG. 3B is a sectional view showing a method for peeling off the resin film according to this embodiment.

【００４６】図３（ｂ）に示すように、封止金型のキャ
ビティーで封止された複数の半導体装置（切断前）のリ
ードフレーム６の裏面に樹脂フィルム７を貼り付け、リ
ードフレーム６の半導体素子が接着された側を下にして
封止樹脂部１５を第１の加熱ブロック１８の上面に搭載
し、リードフレーム６の裏面に貼り付けられた樹脂フィ
ルム７の上面に第２の加熱ブロック１９を載置する。そ
して、それぞれの加熱ブロックを樹脂フィルム７の接着
力を低下させるのに最適な温度に設定した後、第１の加
熱ブロック１８を１７０[℃]に、第２の加熱ブロック１
９を１９０[℃]に設定した。As shown in FIG. 3B, a resin film 7 is attached to the back surface of the lead frame 6 of a plurality of semiconductor devices (before cutting) sealed by the cavities of the sealing mold, and the lead frame 6 is formed. The sealing resin portion 15 is mounted on the upper surface of the first heating block 18 with the side to which the semiconductor element is adhered facing downward, and the second heating is performed on the upper surface of the resin film 7 attached to the back surface of the lead frame 6. The block 19 is placed. Then, after setting each heating block to an optimum temperature for reducing the adhesive force of the resin film 7, the first heating block 18 is set to 170 [° C.] and the second heating block 1 is set.
9 was set to 190 [° C].

【００４７】本実施形態の樹脂フィルムの剥がし方法の
特徴は、封止後の樹脂フィルム７の剥がし工程におい
て、封止樹脂部１５と樹脂フィルム７にそれぞれ加熱ブ
ロックを接触させ、容易に樹脂フィルム７をリードフレ
ーム６から剥がすことを可能にしたことである。The resin film peeling method of this embodiment is characterized in that, in the peeling step of the resin film 7 after sealing, heating blocks are brought into contact with the sealing resin portion 15 and the resin film 7, respectively, so that the resin film 7 can be easily removed. It is possible to peel off the lead frame 6 from the lead frame 6.

【００４８】次に、第３の実施形態について説明する。Next, a third embodiment will be described.

【００４９】図３（ｃ）は、本実施形態の樹脂フィルム
の剥がし方法を示す断面図である。FIG. 3C is a sectional view showing a method of peeling off the resin film of this embodiment.

【００５０】図３（ｃ）に示すように、封止金型で封止
された複数の半導体装置（切断前）のリードフレーム６
に樹脂フィルム７を貼り付け、封止樹脂部１５（図では
下面）を第１の加熱ブロック１８の上に搭載し、樹脂フ
ィルム７上に沿って樹脂フィルム７の剥がす動きに合わ
せて移動する第２の加熱ブロック１９を配し、それぞれ
加熱に適した温度を設定し機械的に剥がすのに可能な温
度に加熱して除去する。本実施形態では、第１の加熱ブ
ロック１８の設定温度を１６０[℃]に、第２の加熱ブロ
ック１９の設定を１８０[℃]とした。As shown in FIG. 3C, a lead frame 6 of a plurality of semiconductor devices (before cutting) sealed with a sealing die.
The resin film 7 is attached to the first heating block 18, the sealing resin portion 15 (the lower surface in the figure) is mounted on the first heating block 18, and the resin film 7 is moved along the resin film 7 in accordance with the peeling movement of the resin film 7. Two heating blocks 19 are arranged, each of which is set to a temperature suitable for heating and is heated to a temperature at which it can be mechanically peeled, and then removed. In the present embodiment, the set temperature of the first heating block 18 is 160 [° C.] and the set temperature of the second heating block 19 is 180 [° C.].

【００５１】本実施形態の特徴は、封止後の樹脂フィル
ムの剥がし工程において、封止樹脂部と樹脂フィルムに
それぞれ加熱ブロックを接触させ、第２の加熱ブロック
を樹脂フィルムの剥がす動きに合わせて移動させながら
加熱することにより、リードフレームと樹脂フィルムと
が効率よく昇温するとともに、リードフレームと樹脂フ
ィルムとの分離する接点において樹脂フィルムを部分的
に封止樹脂部より高温にすることができ、樹脂全体の温
度も低くでき容易に樹脂フィルムを樹脂、外部端子部、
ダイパッド部、フレーム枠等のリードフレームから剥が
すことを可能にした。The feature of this embodiment is that in the peeling step of the resin film after sealing, the heating block is brought into contact with the sealing resin portion and the resin film respectively, and the second heating block is moved in accordance with the movement of peeling the resin film. By heating while moving, the temperature of the lead frame and the resin film can be efficiently raised, and at the contact point where the lead frame and the resin film are separated, the resin film can be partially heated to a temperature higher than that of the sealing resin part. , The temperature of the entire resin can be lowered and the resin film can be easily
It is possible to peel it off from the lead frame such as the die pad and the frame.

【００５２】これにより、樹脂フィルムの接着剤の強度
を弱め、剥がすときに生じるリードフレームの外部端子
部、ダイパッド部、信号接続部と封止樹脂との間に生じ
る応力を緩和し、半導体素子の温度を低い温度に維持す
ることができ、半導体装置の品質を確保しつつ樹脂フィ
ルムを効率的に安定して除去することができる。As a result, the strength of the adhesive of the resin film is weakened, and the stress generated between the external terminal portion of the lead frame, the die pad portion, the signal connecting portion and the sealing resin when peeling off is relaxed, and the semiconductor element The temperature can be maintained at a low temperature, and the resin film can be efficiently and stably removed while ensuring the quality of the semiconductor device.

【００５３】次に、第４の実施形態について説明する。Next, a fourth embodiment will be described.

【００５４】図３（ｄ）に示すように、封止金型で封止
された複数の半導体装置（切断前）の封止樹脂部１５を
第１の加熱ブロック１８の上面に接触させ、半導体装置
のリードフレーム６に貼り付けた樹脂フィルム７に第２
の加熱ブロック１９を接触させるとともに、上部には樹
脂フィルム７上に沿って樹脂フィルム７を剥がす動きに
合わせて移動するエアーユニット（図示せず）を配し、
室温以上の高温の空気を集中的にリードフレーム６と樹
脂フィルム７の分離する接点に吹き付け、それぞれの加
熱ブロックに適した温度を設定し機械的に剥がすのに可
能な温度に加熱して除去する。本実施形態では、第１の
加熱ブロック１８の設定温度をおよそ１５０[℃]に、第
２の加熱ブロック１９の設定温度を２００[℃]とした。As shown in FIG. 3D, the sealing resin portions 15 of a plurality of semiconductor devices (before cutting) sealed with a sealing die are brought into contact with the upper surface of the first heating block 18, and the semiconductor is heated. Secondly on the resin film 7 attached to the lead frame 6 of the device.
While the heating block 19 of is contacted, an air unit (not shown) which moves along the resin film 7 along with the peeling of the resin film 7 is arranged on the upper part,
Air having a temperature higher than room temperature is intensively blown to the contact point where the lead frame 6 and the resin film 7 are separated, a temperature suitable for each heating block is set, and heating is performed to a temperature that allows mechanical peeling to remove the air. . In the present embodiment, the set temperature of the first heating block 18 is set to about 150 [° C.] and the set temperature of the second heating block 19 is set to 200 [° C.].

【００５５】本実施形態の特徴は、封止後の樹脂フィル
ムの剥がし工程において、封止樹脂部および樹脂フィル
ムにそれぞれ加熱ブロックを配置し、エアーユニットを
樹脂フィルムの剥がす動きに合わせて移動させながら、
第２の加熱ブロックの近傍の樹脂フィルムに吹き付ける
ことにより、リードフレームおよび樹脂フィルムを効率
よく昇温させるとともに、リードフレームと樹脂フィル
ムとが分離する接点において樹脂フィルムを高温にする
ことができ、部分的に高温化を図るとともに、封止樹脂
全体の温度も低くできて、封止樹脂、外部端子部、ダイ
パッド部、フレーム枠等のリードフレームの各部から、
容易に樹脂フィルムを剥がすことを可能にした。The feature of this embodiment is that, in the peeling process of the resin film after sealing, heating blocks are arranged on the sealing resin portion and the resin film respectively, and the air unit is moved in accordance with the peeling movement of the resin film. ,
By spraying the resin film in the vicinity of the second heating block, the temperature of the lead frame and the resin film can be efficiently raised, and the resin film can be heated to a high temperature at the contact point where the lead frame and the resin film are separated. The overall temperature of the encapsulation resin can be lowered, and the encapsulation resin, external terminals, die pad, frame frame, and other parts of the lead frame
The resin film can be easily peeled off.

【００５６】これにより、樹脂フィルムの接着剤の強度
を低下させ、樹脂フィルムを剥がすときに生じるリード
フレームの外部端子部、ダイパッド部、信号接続部と封
止樹脂との間に生じる応力を緩和し、半導体装置の品質
を確保しつつ樹脂フィルムを効率的に剥がすことができ
る。As a result, the strength of the adhesive of the resin film is reduced, and the stress generated between the external terminal portion of the lead frame, the die pad portion, the signal connection portion and the sealing resin when the resin film is peeled off is relaxed. The resin film can be efficiently peeled off while ensuring the quality of the semiconductor device.

【００５７】次に、第５の実施形態について、図４
（ａ）〜図４（ｄ）図面を参照しながら説明する。Next, the fifth embodiment will be described with reference to FIG.
(A) to FIG. 4 (d) will be described with reference to the drawings.

【００５８】まず、図４（ａ）に示すように、半導体素
子が封入され大型キャビティーで封止された複数の半導
体装置（切断前）で、樹脂フィルム７を貼り付けたリー
ドフレーム６の封止樹脂部１５（図では下面）に第１の
加熱ブロック１８を接触させる。First, as shown in FIG. 4A, in a plurality of semiconductor devices (before cutting) in which a semiconductor element is sealed and sealed in a large cavity, a lead frame 6 to which a resin film 7 is attached is sealed. The first heating block 18 is brought into contact with the resin stopping portion 15 (lower surface in the figure).

【００５９】次に、図４（ｂ）に示すように、リードフ
レーム６の端に形成された切り欠き部１７をクランプ１
６により把持する。このクランプ部１６にも加熱ブロッ
クを配し、樹脂フィルム７の温度下降を防止している。Next, as shown in FIG. 4B, the notch 17 formed at the end of the lead frame 6 is clamped by the clamp 1
Hold by 6. A heating block is also arranged in this clamp portion 16 to prevent the temperature of the resin film 7 from decreasing.

【００６０】次に、図４（ｃ）に示すように、把持した
樹脂フィルム７をカム（図示せず）に沿って少し右に移
動させながら、適した速さで上昇させ、樹脂フィルム７
の端部から剥がすとともにクランプ部の下面をリードフ
レーム６の上面より上方に位置させる。封止樹脂部１５
およびリードフレーム６に発生する応力を小さくするた
め、この上昇軌跡は半導体装置より離れた位置で完了す
るのが望ましい。Next, as shown in FIG. 4 (c), while moving the gripped resin film 7 to the right along the cam (not shown), the resin film 7 is raised at an appropriate speed to move the resin film 7 upward.
And the lower surface of the clamp portion is positioned above the upper surface of the lead frame 6. Sealing resin part 15
Further, in order to reduce the stress generated in the lead frame 6, it is desirable that the ascending locus be completed at a position distant from the semiconductor device.

【００６１】次に、図４（ｄ）に示すように、上昇させ
たクランプ部１６の高さを保持するカムに沿って右に移
動させながら樹脂フィルム７を順次剥がす。樹脂フィル
ム７の剥がし角度を、おおよそ３０度以下に設定するこ
とにより、剥がし部にかかる応力を少なくできる。この
動きに合わせ第２の加熱ブロック１９または、エアーユ
ニットを同じ方向に動かせるようになっており、それぞ
れの加熱ブロックに適した温度を設定し、機械的に樹脂
フィルムを剥がすのに適した温度に加熱して除去する。
本実施形態では、安定して剥がせる第１の加熱ブロック
１８の設定を１５０[℃]に、第２の加熱ブロック１９の
設定を２００[℃]とし、第２の加熱ブロック１９を５
[ｍｍ／ｓ]で移動させた。Next, as shown in FIG. 4 (d), the resin film 7 is peeled off sequentially while moving to the right along the cam holding the elevated height of the clamp portion 16. By setting the peeling angle of the resin film 7 to about 30 degrees or less, the stress applied to the peeling portion can be reduced. In accordance with this movement, the second heating block 19 or the air unit can be moved in the same direction, and a temperature suitable for each heating block is set to a temperature suitable for mechanically peeling the resin film. Remove by heating.
In the present embodiment, the setting of the first heating block 18 that can be peeled off stably is set to 150 [° C], the setting of the second heating block 19 is set to 200 [° C], and the second heating block 19 is set to 5
It was moved at [mm / s].

【００６２】本実施形態の特徴は、封止後の樹脂フィル
ムの剥がし工程において、把持した樹脂フィルムの端部
を上昇させつつ、リードフレームの端の部分から剥がし
て上昇させた後、３０度以下の角度で移動させ、樹脂フ
ィルムの破損を防ぎ、リードフレームと樹脂の剥離を防
ぎ半導体装置の品質を確保できることである。The feature of this embodiment is that, in the peeling step of the resin film after sealing, the edge of the grasped resin film is lifted while being peeled off from the edge part of the lead frame and raised, and then 30 degrees or less. That is, the resin film is prevented from being damaged, the lead frame and the resin are prevented from peeling off, and the quality of the semiconductor device can be ensured.

【００６３】次に、第６の実施形態について、図面を参
照しながら説明する。Next, a sixth embodiment will be described with reference to the drawings.

【００６４】なお、リードフレームの詳細部についての
構成要件については符号を省略している。It should be noted that the reference numerals are omitted for the structural requirements for the detailed portion of the lead frame.

【００６５】図５（ａ）に示すように、フレーム枠と、
フレーム枠の領域内に設けられた開口部の中央部付近に
設けられたダイパッド部と、ダイパッド部に対してその
各先端部が延在して配置された信号接続用リード部と、
信号接続用リード部に連続して接続した外部端子部と、
フレーム枠および外部端子部の底面およびダイパッド部
に接着する樹脂フィルム７とよりなるリードフレーム６
において、樹脂フィルム７の外形寸法をリードフレーム
６の外形寸法より小さくする。すなわち、リードフレー
ム６に樹脂フィルム７が貼り付けられるが、樹脂フィル
ム７はリードフレーム６の端部を除いた部分に貼り付け
られる。As shown in FIG. 5A, a frame and
A die pad portion provided in the vicinity of the central portion of the opening provided in the region of the frame frame, and a signal connection lead portion in which each tip portion of the die pad portion extends and is arranged,
An external terminal part continuously connected to the signal connection lead part,
A lead frame 6 including a resin film 7 adhered to the frame frame and the bottom surface of the external terminal portion and the die pad
In, the outer dimensions of the resin film 7 are made smaller than the outer dimensions of the lead frame 6. That is, the resin film 7 is attached to the lead frame 6, but the resin film 7 is attached to the portion of the lead frame 6 excluding the end portion.

【００６６】本実施形態の特徴は、封止後の樹脂フィル
ムの剥がし工程において、樹脂フィルムの端部を把持し
て、把持した樹脂フィルムを上昇後、移動して剥がすこ
とで、樹脂フィルムがリードフレームの端部を除く部分
に貼り付けられているため、リードフレームの端面に接
着剤が付着せず、樹脂フィルムの端部の接着力が小さ
く、また、前工程において封止樹脂が樹脂フィルムの端
部に接着しにくいため、剥がし可動途中で局部的に樹脂
フィルムに応力がかかり、樹脂フィルムが破損しにく
く、安定して剥がすことができる。The feature of this embodiment is that in the peeling process of the resin film after sealing, the end portion of the resin film is grasped, the grasped resin film is lifted, and then moved and peeled, whereby the resin film leads. Since it is attached to the part excluding the end part of the frame, the adhesive does not adhere to the end surface of the lead frame, the adhesive force at the end part of the resin film is small, and the sealing resin is Since it is difficult to adhere to the end portion, stress is locally applied to the resin film during the peeling operation, the resin film is less likely to be damaged, and stable peeling can be performed.

【００６７】次に、第７の実施形態について、図面を参
照しながら説明する。Next, a seventh embodiment will be described with reference to the drawings.

【００６８】図５（ｂ）に示すように、フレーム枠と、
フレーム枠の領域内に設けられた開部の中央部付近に設
けられたダイパッド部と、ダイパッド部に対してその各
先端部が延在して配置された信号接続用リード部と、信
号接続用リード部に連続して接続した外部端子部と、フ
レーム枠および外部端子部の底面およびダイパッド部に
接着する樹脂フィルムとよりなるリードフレーム６の端
部で、樹脂フィルム７が貼り付けられる面（リードフレ
ームの裏面）からハーフエッチされた部分２０を形成す
る。As shown in FIG. 5B, a frame
For the signal connection, the die pad portion provided in the vicinity of the central portion of the opening provided in the area of the frame frame, the lead portion for signal connection in which each tip portion of the die pad portion extends, and the signal connection lead portion. A surface to which the resin film 7 is attached, at an end of the lead frame 6 including an external terminal portion continuously connected to the lead portion and a resin film adhered to the bottom surface of the frame frame and the external terminal portion and the die pad portion (lead. A half-etched portion 20 is formed from the back surface of the frame).

【００６９】このハーフエッチされた部分では、樹脂フ
ィルム７の端部には、リードフレーム６に貼り付けられ
ない部分ができる。In this half-etched portion, a portion that cannot be attached to the lead frame 6 is formed at the end of the resin film 7.

【００７０】本実施形態の特徴は、封止後の樹脂フィル
ムの剥がし工程において、樹脂フィルムの端部に形成さ
れた切り欠き部の樹脂フィルムを把持して、把持した樹
脂フィルムを上昇させ、樹脂フィルムの端部から剥がす
と、リードフレームにハーフエッチ部を設けているの
で、把持部と剥がし端面の位置が変わり、樹脂フィルム
にかかる応力が減少し破損が少なくなる特徴がある。The feature of this embodiment is that in the peeling process of the resin film after sealing, the resin film in the notch formed at the end of the resin film is gripped and the resin film gripped is raised, Since the lead frame is provided with the half-etched portion when peeled from the end portion of the film, the positions of the gripping portion and the peeled end surface are changed, and the stress applied to the resin film is reduced, resulting in less damage.

【００７１】次に、第８の実施形態について説明する。Next, the eighth embodiment will be described.

【００７２】リードフレームの裏面に貼り付けられた樹
脂フィルムは、加熱されクランプされて半導体装置の品
質に影響しないように剥がすことが必要で、剥がし力に
耐える必要がある。つまり高温での引っ張り強度、樹脂
の流動圧力に耐える特性が必要である。The resin film attached to the back surface of the lead frame needs to be peeled off so as not to affect the quality of the semiconductor device by being heated and clamped, and it is necessary to endure the peeling force. That is, the tensile strength at high temperature and the property of withstanding the flow pressure of the resin are required.

【００７３】本実施形態では、ポリイミドからなる樹脂
フィルムに熱可塑性のポリイミド系を主成分とする接着
剤を使用したフィルムにより、２００[℃]程度での引っ
張り強度をおよそ２０〜４０[Ｋｇ／ｍｍ2]の範囲と
し、樹脂フィルムの厚さは２５[μｍ]とした。In the present embodiment, the tensile strength at about 200 [° C.] is about 20 to 40 [Kg / mm by using a film in which a thermoplastic resin adhesive containing polyimide as a main component is used in a resin film made of polyimide. 2 ] and the thickness of the resin film was 25 [μm].

【００７４】本実施形態の特徴は、剥がし工程において
高温下で樹脂フィルムの破損に耐え生産ができるよう樹
脂フィルムの厚さと引っ張り強さを選択し、安定生産を
可能にして種々の半導体装置に適応を可能にしたことで
ある。The feature of this embodiment is that the thickness and the tensile strength of the resin film are selected so as to withstand the damage of the resin film at a high temperature in the peeling process and the product can be produced. Is made possible.

【００７５】また、リードフレームにこの樹脂フィルム
を貼り付ける工程も半導体装置の大きさやランド数，ピ
ッチに関係なく共用化が可能で生産性が向上する。Also, the step of attaching the resin film to the lead frame can be shared regardless of the size, the number of lands, and the pitch of the semiconductor device, and the productivity is improved.

【００７６】しかも、本実施形態の製造方法によると、
大型のキャビティーに複数個の半導体素子を搭載し、封
止後樹脂フィルムを剥がし、切断する生産方式により生
産性向上と、半導体装置の大きさに関わらず金型の共用
が可能になる。Moreover, according to the manufacturing method of the present embodiment,
A production method in which a plurality of semiconductor elements are mounted in a large-sized cavity, the resin film is peeled off after sealing, and cut is used to improve productivity and enable sharing of a mold regardless of the size of the semiconductor device.

【００７７】本実施形態の要旨を越えない限り、種々の
変形実施が可能であることはいうまでもない。例えば、
以上の実施形態を種々に組み合わせることにより、信頼
性が高く、半導体素子の大きさ、パッド数に適した半導
体装置のマトリックス状に配した外部端子の数、配置を
選択できる。Needless to say, various modifications can be made without departing from the scope of the present embodiment. For example,
By combining the above-described embodiments in various ways, it is possible to select the number and arrangement of the external terminals arranged in a matrix of the semiconductor device having high reliability and suitable for the size of the semiconductor element and the number of pads.

【００７８】以上の実施形態では、ＳＯＮタイプ、ＱＦ
Ｎタイプのダイパッド内蔵型の半導体装置等多くの半導
体装置の生産方式に実施が可能である。In the above embodiment, the SON type and the QF are used.
The present invention can be applied to many semiconductor device production methods such as N type die pad built-in type semiconductor devices.

【００７９】次に、前記した樹脂封止型半導体装置の製
造方法により、以下の樹脂封止型半導体装置が形成す
る。Next, the following resin-encapsulated semiconductor device is formed by the method for manufacturing the resin-encapsulated semiconductor device described above.

【００８０】図６（ａ）は、本実施形態の樹脂封止型半
導体装置の断面図であり、図６（ｂ）は、本実施形態の
樹脂封止型半導体装置の平面図である。FIG. 6A is a sectional view of the resin-encapsulated semiconductor device of this embodiment, and FIG. 6B is a plan view of the resin-encapsulated semiconductor device of this embodiment.

【００８１】図６（ａ）および図６（ｂ）に示すよう
に、本実施形態の樹脂封止型半導体装置の製造方法によ
り、信号接続用リード部２１の下面側にはハーフエッチ
部以外には封止樹脂１３は存在せず、信号接続用リード
部２１の下面とハーフエッチした一部側面が露出されて
おり、この信号接続用リード部２１の下面、ダイパッド
部２２の下面が実装基板との接続面となる。すなわち、
信号接続用リード部２１のハーフエッチしていない下部
が第１の外部端子部２３、第２の外部端子部２４となっ
ている。As shown in FIGS. 6 (a) and 6 (b), by the method for manufacturing the resin-sealed semiconductor device according to the present embodiment, the lower surface side of the signal connection lead portion 21 is provided with a portion other than the half-etched portion. The sealing resin 13 does not exist, and the lower surface of the signal connecting lead portion 21 and a part of the side surface half-etched are exposed. The lower surface of the signal connecting lead portion 21 and the lower surface of the die pad portion 22 serve as a mounting substrate. It becomes the connection surface of. That is,
The lower portion of the signal connecting lead portion 21 which is not half-etched serves as a first external terminal portion 23 and a second external terminal portion 24.

【００８２】そして、ダイパッド部２２の露出部および
第１の外部端子部２３、第２の外部端子部２４の下面に
は、樹脂封止工程における樹脂のはみ出し部分である樹
脂バリが、樹脂フィルムが密着しているために、実装基
板の電極との接合の信頼性が向上するものである。Then, on the exposed portion of the die pad portion 22 and the lower surfaces of the first external terminal portion 23 and the second external terminal portion 24, resin burrs, which are resin protruding portions in the resin sealing step, and resin films are formed. Since they are in close contact with each other, the reliability of bonding with the electrodes of the mounting board is improved.

【００８３】なお、ダイパッド部２２および第１の外部
端子部２３、第２の外部端子部２４の露出構造は、後述
する製造方法によって容易に実現できるものである。The exposed structure of the die pad portion 22, the first external terminal portion 23, and the second external terminal portion 24 can be easily realized by the manufacturing method described later.

【００８４】なお、本実施形態では、図６（ｃ）の樹脂
封止型半導体装置の平面透視図に示すように、信号接続
用リード部２１のハーフエッチしない下部が第１の外部
端子部２３、第２の外部端子部２４とすることで底面に
配置され、半導体装置の小型化を図ることができる。す
なわち、封止樹脂の面から信号接続用リード部２３の側
面を突出させず、ハーフエッチした信号接続用リード部
２１の露出面と封止樹脂の面とを実質的に同一面に形成
することで、樹脂封止型半導体装置の側面からリード部
が突出しない小型の樹脂封止型半導体装置を実現できる
ものである。In this embodiment, as shown in the perspective plan view of the resin-encapsulated semiconductor device of FIG. 6C, the lower portion of the signal connection lead portion 21 which is not half-etched is the first external terminal portion 23. Since the second external terminal portion 24 is provided on the bottom surface, the semiconductor device can be downsized. That is, the exposed surface of the half-etched signal connecting lead portion 21 and the surface of the sealing resin are formed substantially on the same surface without protruding the side surface of the signal connecting lead portion 23 from the surface of the sealing resin. Thus, it is possible to realize a small resin-sealed semiconductor device in which the lead portion does not protrude from the side surface of the resin-sealed semiconductor device.

【００８５】図６（ｃ）に示すように、ハーフエッチし
た信号接続用リード部２１は封止樹脂を透視して実線で
表示し、信号接続用リード部２１に連続して第１の外部
端子部２３および第２の外部端子部２４にそれぞれ接続
しており、ダイパッド部２２よりも、破線で示した半導
体素子８が大きい構成を示している。As shown in FIG. 6C, the half-etched signal connecting lead portion 21 is shown by a solid line through the sealing resin, and the first external terminal is continuous with the signal connecting lead portion 21. The semiconductor element 8 connected to the portion 23 and the second external terminal portion 24 is larger than the die pad portion 22 by the broken line.

【００８６】さらに、本実施形態の樹脂封止型半導体装
置では、第１の外部端子部２３、第２の外部端子部２
４、ダイパッド部２２が封止樹脂の面、すなわち封止樹
脂の下面から露出して形成されているため、実装基板に
本実施形態の樹脂封止型半導体装置を実装する際の第１
の外部端子部２３、第２の外部端子部２４およびダイパ
ッド部２２と、実装基板の電極との接合になる。したが
って、第１の外部端子部２３および第２の外部端子部２
４をそのまま外部電極として用いることができ、実装基
板への実装のために、それぞれの外部端子部に半田ボー
ル等を付設する必要はなく、製造工数、製造コスト的に
有利となる。Further, in the resin-sealed semiconductor device of this embodiment, the first external terminal portion 23 and the second external terminal portion 2 are
4. Since the die pad portion 22 is formed so as to be exposed from the surface of the sealing resin, that is, the lower surface of the sealing resin, the first method for mounting the resin-sealed semiconductor device of this embodiment on the mounting substrate
The external terminal portion 23, the second external terminal portion 24, and the die pad portion 22 are bonded to the electrodes of the mounting substrate. Therefore, the first external terminal portion 23 and the second external terminal portion 2
4 can be used as an external electrode as it is, and it is not necessary to attach a solder ball or the like to each external terminal portion for mounting on a mounting substrate, which is advantageous in terms of manufacturing steps and manufacturing cost.

【００８７】ここで、本実施形態の製造方法による樹脂
封止型半導体装置の特徴は、信号接続用リード部がマト
リックス状に配置され、小型で多端子の樹脂封止型半導
体装置をリードフレームを用いて安価に実現したことで
ある。The resin-encapsulated semiconductor device manufactured by the manufacturing method according to the present embodiment is characterized in that the signal-connecting lead portions are arranged in a matrix and a small-sized multi-terminal resin-encapsulated semiconductor device is used as a lead frame. It was realized at low cost by using it.

【００８８】また、ダイパッド部を露出した樹脂封止型
半導体装置は、樹脂底面より露出する部分を実装基板に
半田等により接続することにより放熱特性がよくなり、
また、実装基板に半田接合されることにより外部端子部
にかかる機械的、熱的応力を分散することができ接続信
頼性が向上する。そして、ダイパッド部はアップセット
して内蔵することも可能で実装時の耐湿性が向上する。In the resin-encapsulated semiconductor device with the die pad portion exposed, the heat radiation characteristic is improved by connecting the portion exposed from the resin bottom surface to the mounting board by soldering or the like.
Further, by being solder-bonded to the mounting board, mechanical and thermal stress applied to the external terminal portion can be dispersed, and the connection reliability is improved. The die pad portion can be upset and built-in, and the moisture resistance at the time of mounting is improved.

【００８９】図７は、外部接続端子部が長方形の樹脂封
止型半導体装置を示す断面図である。なお、図７（ｂ）
は図７（ｃ）のＡ−Ａ１箇所における断面図である。FIG. 7 is a sectional view showing a resin-sealed semiconductor device having a rectangular external connection terminal portion. Note that FIG. 7B
FIG. 8 is a cross-sectional view taken along the line AA1 in FIG.

【００９０】図７（ａ）、図７（ｂ）および図７（ｃ）
に示すように、実装基板に半田接合される信号接続用リ
ード部２１の側面に半田部が形成される構造も可能であ
り、ランド部も丸でなくてもよく、長方形とした。実装
時に信号接続用リード部２１の接続検査が従来のＱＦＰ
と同様に可能になる。7 (a), 7 (b) and 7 (c)
As shown in FIG. 5, a structure in which the solder portion is formed on the side surface of the signal connecting lead portion 21 that is solder-bonded to the mounting substrate is possible, and the land portion need not be round and is rectangular. The connection inspection of the signal connection lead portion 21 at the time of mounting is performed by the conventional QFP.
As well as possible.

【００９１】また、実装基板に半田接合される信号接続
用リード部の側面に半田部が形成されるＱＦＮとよばれ
る構造も可能であり、ランド部も長方形が多い。実装時
に信号接続用リード部２１の接続検査が、従来のＱＦＰ
と同様に可能になる。３列から４列の底面に配列する構
造も可能でありマトリックス状に配置され小型で多端子
の樹脂封止型半導体装置をリードフレームを用いて安価
に実現できる。A structure called QFN in which a solder portion is formed on the side surface of a signal connecting lead portion which is soldered to a mounting board is also possible, and the land portion is often rectangular. When mounting, the connection inspection of the signal connection lead portion 21 is performed by the conventional QFP.
As well as possible. A structure in which they are arranged on the bottom surface in three to four rows is also possible, and a small-sized multi-terminal resin-sealed semiconductor device arranged in a matrix can be realized at low cost by using a lead frame.

【００９２】以上、本実施形態の樹脂封止型半導体装置
は、前記した樹脂封止型半導体装置の製造方法により、
底面に外部端子部が露出し、樹脂フィルムをリードフレ
ームの裏面から剥がす工程において、加熱しながら樹脂
フィルムを剥がすので、リードフレームおよび封止樹脂
部に機械的、熱的応力が発生せず、高信頼性を実現でき
るものである。As described above, the resin-encapsulated semiconductor device of this embodiment is manufactured by the above-described method for manufacturing a resin-encapsulated semiconductor device.
In the process of peeling the resin film from the back surface of the lead frame with the external terminals exposed on the bottom surface, the resin film is peeled off while heating, so no mechanical or thermal stress is generated in the lead frame and the sealing resin, It is possible to achieve reliability.

【００９３】[0093]

【発明の効果】本発明の樹脂封止型半導体装置の製造方
法は、リードフレームの底面側に樹脂フィルムを密着さ
せて封止した後、加熱しながら樹脂フィルムをリードフ
レームの底面から剥がすことにより、容易、かつ、確実
に樹脂フィルムをリードフレームの底面から剥がすこと
ができる。According to the method of manufacturing a resin-encapsulated semiconductor device of the present invention, the resin film is adhered to the bottom surface of the lead frame for sealing, and the resin film is peeled from the bottom surface of the lead frame while heating. The resin film can be easily and reliably peeled from the bottom surface of the lead frame.

【図面の簡単な説明】[Brief description of drawings]

【図１】本実施形態の樹脂封止型半導体装置の製造方法
の各工程を示す断面図FIG. 1 is a cross-sectional view showing each step of a method of manufacturing a resin-encapsulated semiconductor device of this embodiment.

【図２】本実施形態の樹脂封止型半導体装置の製造方法
の各工程を示す断面図FIG. 2 is a cross-sectional view showing each step of the method for manufacturing the resin-sealed semiconductor device of this embodiment.

【図３】本実施形態の樹脂封止型半導体装置の製造方法
の各工程を示す断面図FIG. 3 is a cross-sectional view showing each step of the method of manufacturing the resin-encapsulated semiconductor device of this embodiment.

【図４】本実施形態の樹脂封止型半導体装置の製造方法
の各工程を示す断面図FIG. 4 is a cross-sectional view showing each step of the method of manufacturing the resin-encapsulated semiconductor device of this embodiment.

【図５】本実施形態の樹脂封止型半導体装置の製造方法
を示す図FIG. 5 is a view showing the method of manufacturing the resin-sealed semiconductor device of the present embodiment.

【図６】本実施形態の樹脂封止型半導体装置を示す図FIG. 6 is a diagram showing a resin-encapsulated semiconductor device of this embodiment.

【図７】本実施形態の樹脂封止型半導体装置を示す図FIG. 7 is a view showing a resin-sealed semiconductor device of this embodiment.

【図８】従来の樹脂封止型半導体装置の製造方法を示す
断面図FIG. 8 is a sectional view showing a method for manufacturing a conventional resin-sealed semiconductor device.

【符号の説明】[Explanation of symbols]

１ ステージ ２ リードフレーム ３ 樹脂封止型半導体装置 ４ 樹脂フィルム ５ クランプ ６ リードフレーム ７ 樹脂フィルム ８ 半導体素子 ９ 接着剤 １０ 金属細線 １１ 封止金型 １２ キャビティー部 １３ 封止樹脂 １４ 加熱ブロック １５ 封止樹脂部 １６ クランプ １７ 切り欠き １８ 第１の加熱ブロック １９ 第２の加熱ブロック ２０ ハーフエッチされた部分 ２１ 信号接続用リード部 ２２ ダイパッド部 ２３ 第１の外部端子部 ２４ 第２の外部端子部 1 stage 2 lead frame 3 Resin-sealed semiconductor device 4 resin film 5 clamps 6 lead frame 7 Resin film 8 Semiconductor elements 9 Adhesive 10 thin metal wires 11 Sealing mold 12 Cavity part 13 Sealing resin 14 heating block 15 Sealing resin part 16 clamps 17 notches 18 First heating block 19 Second heating block 20 Half-etched part 21 Lead for signal connection 22 Die pad 23 First external terminal portion 24 Second external terminal part

───────────────────────────────────────────────────── フロントページの続き (72)発明者 安達 修 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 (72)発明者 竹村 邦和 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 Ｆターム(参考） 5F061 AA01 BA01 CA21 CB13 DD14 EA03 5F067 AA09 AB04 BA02 CC01 CC08 DE01 DE14 DF01    ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Osamu Adachi             1006 Kadoma, Kadoma-shi, Osaka Matsushita Electric             Sangyo Co., Ltd. (72) Inventor Kunikazu Takemura             1006 Kadoma, Kadoma-shi, Osaka Matsushita Electric             Sangyo Co., Ltd. F-term (reference) 5F061 AA01 BA01 CA21 CB13 DD14                       EA03                 5F067 AA09 AB04 BA02 CC01 CC08                       DE01 DE14 DF01

Claims (10)

【特許請求の範囲】[Claims] 【請求項１】 フレーム枠と、前記フレーム枠の領域内
に設けられた開口部の中央部付近に設けられたダイパッ
ド部と、前記ダイパッド部に対してその各先端部が延在
して配置された信号接続用リード部と、前記信号接続用
リード部に連続して接続した外部端子部と、前記フレー
ム枠、前記外部端子部およびダイパッド部のそれぞれの
底面に接着した樹脂フィルムとよりなるリードフレーム
を用意する工程と、前記ダイパッド部上に半導体素子の
裏面を接着する工程と、前記半導体素子の電極と前記信
号接続用リードとを金属細線により電気的に接続する工
程と、前記リードフレームの前記半導体素子が接着され
た側で前記半導体素子および前記金属細線を封止樹脂に
より封止する工程と、前記樹脂フィルムを加熱しながら
リードフレームから剥がす工程とからなることを特徴と
する樹脂封止型半導体装置の製造方法。1. A frame frame, a die pad part provided in the vicinity of the center of an opening provided in the region of the frame frame, and the respective tip parts of the die pad part extending from the die pad part. And a lead frame including a signal connecting lead portion, an external terminal portion continuously connected to the signal connecting lead portion, and a resin film adhered to the bottom surface of each of the frame frame, the external terminal portion and the die pad portion. A step of preparing a back surface of the semiconductor element on the die pad portion, a step of electrically connecting the electrode of the semiconductor element and the signal connecting lead with a thin metal wire, and the lead frame A step of sealing the semiconductor element and the thin metal wire with a sealing resin on the side to which the semiconductor element is bonded; A method of manufacturing a resin-encapsulated semiconductor device, which comprises a peeling step. 【請求項２】 樹脂フィルムを加熱しながらリードフレ
ームから剥がす工程は、前記樹脂フィルムを１５０〜２
００[℃]に加熱しながら前記リードフレームから剥がす
ことを特徴とする請求項１に記載の樹脂封止型半導体装
置の製造方法。2. In the step of peeling the resin film from the lead frame while heating, the resin film is 150 to 2
The method for manufacturing a resin-encapsulated semiconductor device according to claim 1, wherein the resin-sealed semiconductor device is peeled off from the lead frame while being heated to 00 [° C.]. 【請求項３】 樹脂フィルムを加熱しながらリードフレ
ームから剥がす工程は、加熱したブロックを樹脂封止面
に接触させて前記樹脂フィルムを前記リードフレームか
ら剥がすことを特徴とする請求項１に記載の樹脂封止型
半導体装置の製造方法。3. The step of peeling a resin film from a lead frame while heating is performed by bringing a heated block into contact with a resin sealing surface to peel the resin film from the lead frame. A method of manufacturing a resin-encapsulated semiconductor device. 【請求項４】 リードフレームを用意する工程では、樹
脂フィルムは前記リードフレームの端部を除く領域に貼
り付けられていることを特徴とする請求項１に記載の樹
脂封止型半導体装置の製造方法。4. The method of manufacturing a resin-encapsulated semiconductor device according to claim 1, wherein in the step of preparing the lead frame, the resin film is attached to a region of the lead frame excluding an end portion. Method. 【請求項５】 リードフレームを用意する工程では、前
記リードフレームの端部が前記リードフレームの裏面側
からハーフエッチングされ、樹脂フィルムの端部と前記
リードフレームのハーフエッチングされた部分との間は
分離していることを特徴とする請求項１に記載の樹脂封
止型半導体装置の製造方法。5. In the step of preparing a lead frame, the end portion of the lead frame is half-etched from the back surface side of the lead frame, and the end portion of the resin film and the half-etched portion of the lead frame are separated from each other. The method for manufacturing a resin-sealed semiconductor device according to claim 1, wherein the resin-sealed semiconductor device is separated. 【請求項６】 リードフレームを用意する工程では、引
っ張り強さが２０〜４０[Ｋｇ／ｍｍ2]の樹脂フィルム
が前記リードフレームの裏面に貼り付けられていること
を特徴とする請求項１に記載の樹脂封止型半導体装置の
製造方法。6. The step of preparing a lead frame, wherein a resin film having a tensile strength of 20 to 40 [Kg / mm 2 ] is attached to the back surface of the lead frame. A method for manufacturing the resin-encapsulated semiconductor device described. 【請求項７】 樹脂フィルムを加熱しながらリードフレ
ームから剥がす工程は、前記樹脂フィルムの端部を把持
するクランプを上昇させる工程と、前記樹脂フィルムの
端部を把持したクランプをリードフレームに平行に移動
させて、前記樹脂フィルムを前記リードフレームから剥
がすことを特徴とする請求項１に記載の樹脂封止型半導
体装置の製造方法。7. The step of peeling the resin film from the lead frame while heating is performed by elevating a clamp that holds the end portion of the resin film, and paralleling the clamp that holds the end portion of the resin film to the lead frame. The method for manufacturing a resin-encapsulated semiconductor device according to claim 1, wherein the resin film is moved and peeled off from the lead frame. 【請求項８】 樹脂フィルムを加熱しながら前記リード
フレームから剥がす工程は、加熱したブロックを樹脂フ
ィルムに接触させて前記樹脂フィルムを前記リードフレ
ームから剥がすことを特徴とする請求項１に記載の樹脂
封止型半導体装置の製造方法。8. The resin according to claim 1, wherein in the step of peeling the resin film from the lead frame while heating, the heated block is brought into contact with the resin film to peel the resin film from the lead frame. Manufacturing method of sealed semiconductor device. 【請求項９】 加熱したブロックを樹脂フィルムに沿っ
て移動させ、前記樹脂フィルムの前記加熱ブロックが通
過した部分をリードフレームから剥がすことを特徴とす
る請求項８に記載の樹脂封止型半導体装置の製造方法。9. The resin-encapsulated semiconductor device according to claim 8, wherein the heated block is moved along the resin film, and a portion of the resin film that has passed through the heating block is peeled off from the lead frame. Manufacturing method. 【請求項１０】 加熱したブロック近傍の樹脂フィルム
に室温以上の空気を吹き付けることを特徴とする請求項
８に記載の樹脂封止型半導体装置の製造方法。10. The method for manufacturing a resin-encapsulated semiconductor device according to claim 8, wherein air at room temperature or higher is blown onto the resin film in the vicinity of the heated block.
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