JP2003017613A - Circuit board and semiconductor device using the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a circuit board capable of reducing occurrence of a reflected noise by decreasing mismatches of characteristic impedances between signal wirings and having no bulge or no peeling of a ground or a power source conductor layer, and to provide a semiconductor device using the same. SOLUTION: The circuit board 8 comprises signal wirings 3 formed of wiring conductors 3a extended in one direction and wiring conductors 3b extended in a direction of 45 deg. to the one direction, and the ground or the power source conductor layer 5 disposed oppositely to the wirings 3 via an insulating layer 2 and having rectangular openings 7 arranged in a lattice state. In this case, the openings 7 are arranged in a direction of 15 to 30 deg. to the one direction.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wiring board used for mounting a semiconductor element and a semiconductor device having the semiconductor element mounted on the wiring board.

[0002]

2. Description of the Related Art Generally, current electronic devices are required to be small, thin, lightweight, high-performance, high-performance, high-quality and highly reliable as represented by mobile communication devices. Electronic devices mounted on various electronic devices are also required to be small and have high density. Therefore, there is a demand for miniaturization, thinning, and multi-terminals in wiring boards that form semiconductor devices, and in order to achieve this, the widths of wirings such as signal wirings are narrowed and their intervals are narrowed. Further, the wiring density has been increased by increasing the number of wiring layers and the diameter of the through conductors connecting the wirings.

As a wiring board capable of such high-density wiring, a multilayer wiring board manufactured by using a build-up method is known. The build-up method, for example, on a composite insulating substrate by impregnating a reinforcing material such as glass cloth or aramid non-woven fabric with a thermosetting resin typified by an epoxy resin having heat resistance and chemical resistance, After the wiring conductor is sandwiched between them, an adhesive made of a thermosetting resin such as epoxy resin is applied to form an insulating layer and the insulating layer is heated and hardened. ~ 200 μm
After forming through holes of a certain degree, the surface of the insulating layer is then chemically roughened, and a conductor film is deposited on the wiring conductors on the side surfaces of the through holes and the bottom surface of the through holes by electroless copper plating and electrolytic copper plating. Then, the through-hole conductor is formed, the wiring conductor connected to the through-hole conductor is formed on the surface of the insulating layer, and the formation of the insulating layer and the through-hole conductor / wiring conductor is repeated a plurality of times to manufacture the wiring board.

The wiring conductor of such a wiring board is functionalized as a power supply conductor layer / ground conductor layer and a signal wiring depending on the application. Of these, the power supply conductor layer functions to supply power to the semiconductor element mounted on the wiring board, and is composed of a solid pattern thin film conductor obtained by plating substantially the entire surface of the insulating layer. The signal wiring also functions to propagate an electric signal without electromagnetic interference, and is composed of a conductor patterned into a predetermined circuit shape. Further, the ground conductor layer functions to shield the electromagnetic waves generated by the current flowing through the power supply conductor layer and the signal wiring and prevent the noise generated in other wiring conductors. It is composed of a solid pattern thin film conductor plated with. That is, the electromagnetic wave generated from the signal wiring or the like is shielded by converting it into an eddy current in the ground conductor layer, and noise is not generated in other signal wiring due to the shielding effect.

The power supply conductor layer, the signal wiring, and the ground conductor layer, which play such a role, are electrically connected to the mounting electrodes for connecting an external electric circuit, which are provided on the surface of the wiring board, through through conductors. They are arranged in a laminated structure capable of supplying electric power to the electronic components mounted on the wiring board, transmitting signals, and shielding electromagnetic waves.

Further, the solid patterns of the power supply conductor layer and the ground conductor layer are provided with rectangular openings arranged in a lattice shape so as to release gas generated when the resin of the insulating layer is cured. The rectangular openings arranged in a grid pattern are evenly arranged over the entire surface of the power supply conductor layer and the ground conductor layer and are arranged in parallel with the signal wiring when the wiring board is viewed in plan.

[0007]

However, in the conventional wiring board, the rectangular openings arranged in a lattice and the signal wirings are arranged in parallel when viewed in a plan view. Therefore, depending on the signal wiring, Reflection due to mismatch of characteristic impedance in high frequency region due to characteristic impedance difference between each signal wiring, which is formed to overlap with the opening arranged oppositely through the insulating layer or not to overlap with the opening. There is a problem that noise is generated and a semiconductor element mounted is malfunctioning.

Further, in the conventional wiring board, if the opening is too large, the shield effect due to the solid pattern becomes small, and crosstalk noise occurs due to signal leakage. On the contrary, if the opening is too small, the insulating layer is formed. There is a problem in that the gas generated when the resin is cured does not easily escape and the ground or power supply conductor layer swells or peels off.

The present invention has been completed in view of the problems of the prior art, and an object thereof is to reduce the occurrence of reflection noise by reducing the mismatch of the characteristic impedance between the signal wirings and to ground. Another object of the present invention is to provide a wiring board in which the power supply conductor layer is not swollen or peeled off, and a semiconductor device using the wiring board.

[0010]

A wiring board according to the present invention comprises a signal wiring formed by a wiring conductor extending in one direction and a wiring conductor extending in a direction of 45 degrees with respect to one direction, and an insulating layer on the signal wiring. And a grounding or power supply conductor layer having square openings arranged in a grid pattern, the square openings being provided with respect to the one direction.
It is characterized by being arranged in the direction of 15 to 30 degrees.

Further, the wiring board of the present invention is characterized in that one side of the opening of the rectangular opening is 0.10 to 0.15 mm and the interval between the openings is 0.3 to 0.6 mm.

Further, the semiconductor device of the present invention has a mounting electrode for the semiconductor element electrically connected to the signal wiring on the surface of the wiring board, and the electrode for the semiconductor element is electrically connected to this mounting electrode. It is characterized by being connected to.

According to the wiring board of the present invention, a square formed on the ground or power supply conductor layer for the signal wiring formed by the wiring conductor extending in one direction and the wiring conductor extending in the direction of 45 degrees with respect to one direction. Since the openings are arranged in the direction of 15 to 30 degrees, when the wiring board is viewed in plan, the signal wiring and the rectangular opening do not overlap with each other evenly, and there is no difference in characteristic impedance between the signal wirings. As a result, it is possible to obtain a wiring board in which the generation of reflection noise is suppressed and signals are stably transmitted even in a high frequency signal region.

Further, according to the wiring board of the present invention, one side of the opening of the rectangular opening is set to 0.10 to 0.15 mm and the interval between the openings is set to 0.3 to 0.6 mm. As a result, crosstalk noise between signal wires in the high frequency range can be reduced, and the gas generated when the resin in the insulating layer cures can be easily released, resulting in swelling or peeling of the ground or power supply conductor layer. It is possible to make a wiring board without a wiring board.

Further, according to the semiconductor device of the present invention, a mounting electrode for the semiconductor element electrically connected to the signal wiring is provided on the surface of the wiring board, and the electrode for the semiconductor element is electrically connected to the mounting electrode. The signal wiring and the rectangular opening do not overlap each other evenly when the wiring board is viewed in plan, and there is no difference in the characteristic impedance between the signal wirings. It is possible to provide a semiconductor device in which the occurrence of noise is suppressed and a signal is stably transmitted even in a high frequency signal region.

[0016]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, a wiring board of the present invention and a semiconductor device using the same will be described in detail with reference to the accompanying drawings.

FIG. 1 is a sectional view showing an example of an embodiment of a semiconductor device in which a semiconductor element is mounted on a wiring board of the present invention, and FIG. 2 is a signal wiring and a ground conductor of the wiring board of the present invention. FIG. 3 is a transparent plan view showing an example of an embodiment when a layer and a layer are viewed in a plan view. The ground conductor layer in FIG. 2 may be a power conductor layer.

In these figures, 1 is an insulating substrate, 2 is an insulating layer, 3 is signal wiring, 4 is a ground conductor layer, 5 is a power conductor layer, 6 is a through conductor, and 7 is a square opening. The wiring board 8 of the present invention is constituted by. Also, this wiring board 8
The semiconductor element 9 is mounted on the mounting electrode 10 and the semiconductor element 9
The semiconductor device 11 of the present invention is formed by electrically connecting the electrodes of the above. The ground conductor layer 4 and the power conductor layer 5 of the wiring board 8 of the present invention are formed with the rectangular openings 7 arranged in a grid pattern.

The wiring board 8 has a function as a support member for the semiconductor element 9, and constitutes the wiring board 8 in which a plurality of insulating layers 2 are laminated on the main surface of the insulating substrate 1 on the front surface and / or the back surface. The insulating substrate 1 has a function as a support for the insulating layer 2, and is made of, for example, glass cloth-epoxy resin or glass cloth-bismaleimide triazine resin / glass cloth-polyphenylene ether resin / aramid fiber-epoxy resin. It is manufactured by the method.
Further, conductor layers such as the power supply conductor layer 5 are adhered and formed on the main surface of the insulating substrate 1, and these conductor layers are formed on the insulating substrate 1.
It is electrically connected by a through-hole conductor 15 formed inside. Furthermore, on the main surface of the insulating substrate 1, signal wiring 3 made of a metal thin film of copper, gold, nickel, aluminum, etc.
The ground conductor layer 4 and the power supply conductor layer 5 are laminated with the insulating layer 3 in between.

The insulating layer 2 includes the signal wiring 3 and the ground conductor layer 4.
It functions as a support member that supports the power supply conductor layer 5, and is made of, for example, a thermosetting resin such as an epoxy resin, a bismaleimide triazine resin or a polyphenylene ether resin, an elastomer, and an inorganic insulating filler. A thermoplastic resin component capable of roughening the surface may also be contained in order to improve the adhesion to the metal thin film such as the signal wiring 3, the ground conductor layer 4, and the power conductor layer 5.

For such an insulating layer 2, for example, a liquid varnish is obtained by kneading a mixture of an epoxy resin, a thermoplastic resin, an elastomer, and an inorganic insulating filler to which a solvent is added.
Polyethylene terephthalate (PE
T) A release sheet is applied and dried at a temperature of 60 to 100 ° C to form a film. Further, the insulating layer 2 is formed with a through hole having a diameter of about 30 to 300 μm by using a well-known laser such as a carbon dioxide laser, a YAG laser or a UV laser, and copper, gold, nickel, aluminum is formed inside the through hole. The through conductor 6 for electrically connecting the signal wirings 3 to each other is formed by depositing a metal thin film such as. Since the dried film to be the insulating layer 2 contains an elastomer, it can be easily stored by laminating a polyethylene sheet on the upper surface of the film and winding it into a roll. The thickness of the film can be set freely, but from the viewpoint of insulation, a thickness in the range of 20 to 100 μm is preferable. The insulating layer 2 is formed by pressing the film onto the surface of the insulating substrate 1 using a vacuum laminator.
It is laminated by thermosetting in an oven.

On the surface of the insulating layer 2, the signal wiring 3, the solid conductor ground conductor layer 4 and the power conductor conductor layer 5 are formed.
These are electrically connected by a through conductor 6. The signal wiring 3, the ground conductor layer 4, and the power supply conductor layer 5 function as a conductive path that electrically connects the semiconductor element 9 mounted on the wiring board 8 to an external electric circuit board (not shown). Have. Further, the signal wiring 3 has a width of 20 to 100 μm, and in order to facilitate wiring design and prevent cracks at the bent portions, the wiring conductor 3a extends in one direction and the wiring conductor 3a extends in a direction of 45 degrees with respect to one direction. It is formed by the extending wiring conductor 3b. On the other hand, a solid ground conductor layer 4 and a power conductor layer 5
In order to escape the gas generated when the resin of the insulating layer 2 is cured and to improve the adhesion between the insulating layers 2, a large number of square openings 7 arranged in a lattice are formed. There is.

Signal wiring 3, ground conductor layer 4 and power conductor layer 5
As the metal material forming the through conductor 6, a metal such as copper or gold, nickel, aluminum or the like is preferable from the viewpoint of low electric resistance value, and copper is preferable from the viewpoint of low cost. The thickness of the metal thin film made of copper, gold, nickel, aluminum or the like is preferably 3 μm or more from the viewpoint of transmitting a high-speed signal, and the metal thin film is adhered to the insulating substrate 1 or the insulating layer 2. In order to prevent a large stress from remaining in the metal thin film and prevent the metal thin film from peeling off from the insulating substrate 1 or the insulating layer 2 at the time of being formed, the thickness is preferably 50 μm or less.

Such a metal thin film is formed by the method described below. First, a through hole is formed at a desired portion of the insulating layer 2 by using, for example, a carbon dioxide laser, and then the insulating layer 2 is formed.
The surface and the inner wall of the through-hole are roughened by immersing them in a roughening liquid such as an aqueous solution of permanganates. Next, the surface of the insulating layer 2 and the inner wall of the through hole are immersed in an aqueous solution of palladium, which serves as a catalyst for electroless plating, to deposit the catalyst on the surface of the insulating layer 2 and the inner wall of the through hole, and further, copper sulfate / Rosell Immerse in an electroless plating solution consisting of salt, formalin, EDTA sodium salt, stabilizer, etc. for about 30 minutes to deposit an electroless copper plating film of several μm. Then, a photosensitive dry film resist is laminated on the surface of the insulating layer 2 to form a predetermined wiring pattern to be a thin film conductor by exposure and development, and thereafter, sulfuric acid, copper sulfate pentahydrate, chlorine, and a brightening agent. The through conductor 6 is formed on the inner wall or the inside of the through hole by immersing the electrolytic copper plating solution including the above for several hours while applying a current of several A / dm ² . Furthermore, the photosensitive dry film resist is peeled off using sodium hydroxide, and then,
By etching the surface of the plating film with an aqueous solution of sulfuric acid / hydrogen peroxide, the ground conductor layer 4 and the power conductor layer 5 having the signal wirings 3 and the rectangular openings 7 arranged in a grid pattern are formed on the surface of the insulating layer 2. It

Then, the insulating layer 2 is laminated on the upper surface of the insulating layer 2 on which the signal wiring 3, the ground conductor layer 4, the power source conductor layer 5, and the through conductor 6 are formed, and the same steps as described above are repeated to repeat the signal. Wiring 3, ground conductor layer 4, power supply conductor layer 5,
A plurality of insulating layers 2 are laminated by forming the penetrating conductor 6 and repeating this a plurality of times.

In the wiring board 8 of the present invention, the signal wiring 3 and the ground conductor layer 4 or the power supply conductor layer 5 are designed to form a pair, and the insulating layer 2 is formed above and below the signal wiring 3.
The ground conductor layer 4 or the power supply conductor layer 5 is arranged via the.

In the wiring board 8 of the present invention, the rectangular openings 7 arranged in the grid pattern of the ground conductor layer 4 or the power conductor layer 5 are arranged at 15 positions with respect to the wiring conductors 3a and 3b extending in one direction.
They are arranged in the direction of ~ 30 degrees. This is also important. Here, the wiring conductors 3a, 3 extending in one direction
The direction of 15 to 30 degrees with respect to b is, for example, the wiring conductor 3a.
Shows a range of 15 to 30 degrees in the same direction as the wiring conductor 3b, and shows a range of 15 to 30 degrees in the same direction as the wiring conductor 3a for the wiring conductor 3b.

According to the wiring board 8 of the present invention, the rectangular openings 7 arranged in a lattice form extend in one direction.
Since they are arranged in the direction of 15 to 30 degrees with respect to 3b, when the wiring board 8 is viewed in plan, the signal wiring 3 and the rectangular opening 7 are superposed on each other evenly, and the characteristics between the respective signal wirings 3 are increased. There is no difference in impedance, and as a result, the generation of reflection noise is suppressed, and the wiring board 8 can be provided in which signals are stably transmitted even in the high frequency signal region. If the square openings 7 arranged in a grid pattern are arranged in an angle direction smaller than 15 degrees or larger than 30 degrees with respect to the wiring conductors 3a and 3b extending in one direction, the signal wiring is 3 and the rectangular opening 7 are unevenly overlapped, the value of the characteristic impedance is greatly different between the signal wirings 3, reflection noise is generated due to the characteristic impedance mismatch in the high frequency region, and the semiconductor element malfunctions. Tend to do. Therefore, the rectangular openings 7 arranged in a grid pattern are arranged with respect to the wiring conductors 3a and 3b extending in one direction.
It is preferably arranged in the direction of 15 to 30 degrees.

Here, the reflection noise is a phenomenon in which the waveform of the signal wiring 3 is stepwise disturbed due to the voltage reflection caused by the mismatch of the characteristic impedance, and in particular, in the high frequency region, the mismatch of the small characteristic impedance is caused. However, reflection noise is likely to occur, which may cause the semiconductor element 9 mounted on the wiring board 8 to malfunction.

Further, in the wiring board 8 of the present invention,
It is preferable that one side of the opening of the rectangular opening 7 is 0.10 to 0.15 mm and the interval between the openings is 0.3 to 0.6 mm. This is also important.

According to the wiring board 8 of the present invention, one side of the opening of the rectangular opening 7 is set to 0.10 to 0.15 mm and the interval between the openings is set to 0.3 to 0.6 mm. Cross-talk noise between the signal wirings 3 in the high frequency region can be reduced by the shielding effect of the layer 5, and the gas generated when the resin of the insulating layer 2 is cured can be easily released, and as a result, the ground conductor layer 4 Alternatively, the wiring board 8 can be obtained in which the power supply conductor layer 5 does not swell or peel off.

One side of the opening of the rectangular opening 7 is 0.10.
If it is smaller than mm, the gas generated when the resin of the insulating layer 2 is cured does not easily escape from the insulating layer 2 and the ground conductor layer 4 or the power conductor layer 5 tends to swell or peel off. If it is larger than mm, the shield effect of the ground conductor layer 4 or the power conductor layer 5 becomes small, and there is a risk that crosstalk noise occurs and the semiconductor element 9 malfunctions. Therefore, one side of the opening of the rectangular opening 7 is 0.10 to 0.15.
It is preferably mm. Also, the spacing between the openings is 0.3
If it is less than mm, the portion where the ground conductor layer 4 or the power supply conductor layer 5 and the signal wiring 3 overlap with each other increases, the shield effect of the ground conductor layer 4 and the power supply conductor layer 5 becomes small, and crosstalk noise occurs, which causes semiconductors. The element 9 tends to malfunction, and if it is larger than 0.6 mm, the number of the rectangular openings 7 becomes small, and the gas generated when the resin of the insulating layer 2 is cured does not easily escape from the insulating layer 2. The ground conductor layer 4 or the power supply conductor layer 5 tends to swell or peel off. Therefore, the distance between the openings of the rectangular openings 7 is preferably 0.3 to 0.6 mm.

Crosstalk noise is a phenomenon that occurs when a signal is induced in another signal wiring by capacitive coupling or dielectric coupling, and in the present invention, the insulating layer 2 is provided above and below the signal wiring 3. Since the ground conductor layer 4 or the power conductor layer 5 is arranged, the electromagnetic wave generated from the signal wiring 3
The grounding conductor layer 4 or the power supply conductor layer 5 converts the eddy current to shield it, and the shielding effect prevents the other signal wiring 3 from generating noise.

Thus, according to the wiring board 8 of the present invention,
Since the side of the opening of the rectangular opening 7 is set to 0.10 to 0.15 mm and the interval between the openings is set to 0.3 to 0.6 mm, the shielding effect of the ground conductor layer 4 and the power supply conductor layer 5 causes a gap between the signal wirings 3 in the high frequency region. The crosstalk noise can be reduced, and the gas generated when the resin of the insulating layer is cured can be easily escaped from the insulating layer 2, so that the ground conductor layer 4 or the power conductor layer 5 does not swell or peel off. It can be the substrate 8.

Incidentally, in order to protect the insulating layer 2 and the mounting electrode 10 from the heat history when the semiconductor element 9 is mounted on the wiring board 8, a solder resistant resin made of a photosensitive resin is formed on the outermost surface of the insulating layer 2. Layer 12 may be deposited. Further, in this case, an opening for the conductor bump 13 for connecting the mounting electrode 10 and the electrode of the semiconductor element 9 is formed on the mounting electrode 10 of the solder-resistant resin layer 12 by exposure and development. Furthermore, when a metal having good conductivity and excellent corrosion resistance such as nickel and gold is deposited on the surface of the mounting electrode 10 at the bottom of the opening by plating to a thickness of 1 to 20 μm, the surface of the mounting electrode 10 It is possible to effectively prevent the above-mentioned oxidative corrosion and to improve the connection between the mounting electrode 10 and the conductor bump 13.

Further, the semiconductor device 11 of the present invention is formed by electrically connecting the mounting electrodes 10 on the surface of the wiring substrate 8 and the electrodes of the semiconductor element 9 via the conductor bumps 13. Note that the solder-resistant resin layer 12 deposited on the mounting electrode 10
It is desirable that the shape of the opening is circular, and
It is preferable that their diameters are in the range of 50 to 300 μm on the Philip chip side and 300 to 800 μm on the ball grid array side.

The conductor bump 13 has a function of electrically connecting the mounting electrode 10 and each electrode of the semiconductor element 9, and is formed of a metal such as solder on the mounting electrode 10 on the surface of the wiring board 8. There is. Such a conductive bump 13 is made of a conductive material such as gold or an alloy such as lead-tin, tin-zinc, tin-silver-bismuth. For example, when the conductive material is lead-tin solder, the lead-
A paste made of tin is printed on the opening of the solder resistant resin layer 12 by screen printing, or a solder ball made of lead-tin is placed on the opening of the solder resistant resin layer 12 and then passed through a reflow oven for mounting. It is fixedly formed on the electrode 10 in a hemispherical shape. Thereafter, the semiconductor element 9 is placed on the conductor bumps 13 and passed through a reflow furnace, so that the mounting electrode 10 and each circuit of the semiconductor element 9 are electrically connected. By injecting an underfill material 14 composed of a thermosetting resin and a filler between the semiconductor element 9 and the surface of the wiring board 8, the conductor bumps 13 are protected and the semiconductor element 9 is placed on the wiring board 8. It is firmly fixed.

Thus, according to the semiconductor device 11 of the present invention, the mounting electrode 10 for the semiconductor element 9 electrically connected to the signal wiring 3 is provided on the surface of the wiring board 8 and the mounting electrode 10 is provided. Since the electrodes of the semiconductor element 9 are electrically connected, when the wiring board 8 is viewed in plan view, the signal wiring 3 and the rectangular opening 7 are overlapped on average, so that the respective signal wirings 3 are Since there is no difference in characteristic impedance and the occurrence of reflection noise is suppressed, it is possible to obtain the semiconductor device 11 in which signals are stably transmitted even in a high frequency signal region.

Needless to say, the wiring board 8 and the semiconductor device 11 of the present invention are not limited to the above-mentioned embodiments, and various modifications can be made without departing from the scope of the present invention. .

[0040]

According to the wiring board of the present invention, the signal wiring formed by the wiring conductor extending in one direction and the wiring conductor extending in the direction of 45 degrees with respect to one direction is formed in the ground or power supply conductor layer. Since the rectangular openings are arranged in the direction of 15 to 30 degrees, when the wiring board is viewed in plan, the signal wiring and the rectangular opening are overlapped on average, and a difference in characteristic impedance occurs between the signal wirings. As a result, it is possible to obtain a wiring board in which the generation of reflection noise is suppressed and signals are stably transmitted even in a high frequency signal region.

Further, according to the wiring board of the present invention, one side of the opening of the rectangular opening is set to 0.10 to 0.15 mm and the interval between the openings is set to 0.3 to 0.6 mm. As a result, crosstalk noise between signal wires in the high frequency range can be reduced, and the gas generated when the resin in the insulating layer cures can be easily released, resulting in swelling or peeling of the ground or power supply conductor layer. It is possible to make a wiring board without a wiring board.

Further, according to the semiconductor device of the present invention, a mounting electrode for the semiconductor element electrically connected to the signal wiring is provided on the surface of the wiring board, and the electrode for the semiconductor element is electrically connected to the mounting electrode. The signal wiring and the rectangular opening do not overlap each other evenly when the wiring board is viewed in plan, and there is no difference in the characteristic impedance between the signal wirings. It is possible to provide a semiconductor device in which the occurrence of noise is suppressed and a signal is stably transmitted even in a high frequency signal region.

[Brief description of drawings]

FIG. 1 is a cross-sectional view showing an example of an embodiment of a semiconductor device in which a semiconductor element is mounted on a wiring board of the present invention.

FIG. 2 is a transparent plan view showing an example of an embodiment when the signal wiring of the wiring board of the present invention and the ground and power supply conductor layers are viewed in a plan view.

[Explanation of symbols]

1 ... Insulating substrate 2 ... Insulation layer 3 ... Signal wiring 3a ・ 3b ・ ・ ・ ・ ・ Wiring conductor 4 ... Ground conductor layer 5 ... Power supply conductor layer 7 ... Square opening 8 ... Wiring board 9 ... Semiconductor element 10 --- Electrode for mounting 11 --- ・ Semiconductor device

Claims (3)

[Claims] 1. A signal wiring formed by a wiring conductor extending in one direction and a wiring conductor extending in a direction of 45 degrees with respect to the one direction, and the signal wiring is arranged so as to face each other with an insulating layer interposed therebetween, and has a grid shape. A wiring board comprising a ground or power supply conductor layer having arrayed rectangular openings, wherein the rectangular openings are arrayed in a direction of 15 to 30 degrees with respect to the one direction. Wiring board to do. 2. The rectangular opening has one side of the opening of 0.1.
The wiring board according to claim 1, wherein the wiring board has a distance of 0 to 0.15 mm and a distance between the openings is 0.3 to 0.6 mm. 3. The wiring board according to claim 1 or 2, wherein the surface of the wiring board has a mounting electrode for a semiconductor element electrically connected to the signal wiring, and the mounting electrode has an electrode for the semiconductor element. A semiconductor device characterized by being electrically connected.