JP2003017376A - System and method for producing semiconductor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a system for producing a semiconductor while protecting a semiconductor wafer against contamination, and a method for producing a semiconductor using that system. SOLUTION: The system for producing a semiconductor comprises a local clean room for keeping a specified cleanliness in a section by pressure feeding air cleaned through a high performance filter using a fan, a production unit disposed on the outside of the local clean room through an opening for delivering a semiconductor wafer, a semiconductor wafer container disposed on the outside of the local clean room through the opening for delivering a semiconductor wafer while facing the production unit, and a carrier disposed in the local clean room and delivering the semiconductor wafer in the semiconductor wafer container between the semiconductor wafer container and the production unit wherein a high current velocity air flow generator for making the current velocity of clean air on the production unit side and the semiconductor wafer container side higher than in other regions is disposed in the local clean room.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus using a local clean room and a semiconductor manufacturing method using this semiconductor manufacturing apparatus.

[0002]

2. Description of the Related Art In a semiconductor device manufacturing factory, it is necessary to make the periphery of a semiconductor wafer to be manufactured extremely clean. Recently, for example, Japanese Patent Laid-Open No. 9-283587,
JP-A-10-74815 and JP-A-11-2512
07, JP-A-2000-133697, JP-A-2000-173911, and JP-A-2000-306.
As disclosed in Japanese Patent Application Laid-Open No. 971, Japanese Patent Application Laid-Open No. 2001-76998, Japanese Patent Application Laid-Open No. 2001-85507, etc., it is a method for maintaining local high cleanliness around a semiconductor wafer from a method for maintaining high cleanliness of the entire room. It is changing to the environment method.

FIG. 6 shows an example thereof. A local clean room 6 is installed in the clean room 1. The clean room 1 has a fan 3a and a high-performance filter 3 on the ceiling 2.
Install the fan filter unit 3 consisting of b and the floor 4
The perforated plate 5 is installed in the room, the conditioned air is supplied from the back side of the ceiling 2 by the air conditioner 17, and a clean space of, for example, class 1000 is formed in the room.

The local clean room 6 has a high performance filter 7 and a fan 8 installed on the upper side, and the wall member 6 on the downstream side.
It is configured so as to be surrounded by a and to form a clean space of about class 1, for example, in the compartment. On one side of the local clean room 6, the manufacturing apparatus 9 is provided with the semiconductor wafer 15
It is installed via the delivery port 10.

On the other side of the local clean room 6,
A semiconductor wafer storage container 11 is installed via a delivery port 12 of a semiconductor wafer 15. Semiconductor wafer storage container 1
1 is placed on the mounting table 13. In the mini-environment method, the front open integrated pot (FOUP) is filled with a highly clean atmosphere inside to isolate the semiconductor wafer 15 from dust, chemical substances and humans during the waiting time between the steps during the transportation between the steps. It is stored in a container called.

Further, in the local clean room 6, a transfer device 14 for transferring the semiconductor wafer 15 in the semiconductor wafer storage container 11 between the semiconductor wafer storage container 11 and the manufacturing apparatus 9 is installed. In the semiconductor manufacturing apparatus configured as described above, first, the local clean room 6 is driven to set the inside of the compartment to class 1.

Next, the lid 11a of the semiconductor wafer storage container 11 which is transported by the automatic transport robot (AGV) 18 and placed on the mounting table 13 is placed in the local clean room 6 together with the lid 12a of the delivery port 12 of the semiconductor wafer 15. It is opened by the opener 16 provided at. Then, the transport device 14
Is operated to transfer the semiconductor wafer 15 in the semiconductor wafer storage container 11 between the semiconductor wafer storage container 11 and the manufacturing apparatus 9.

In the manufacturing apparatus 9, the semiconductor wafer 15 is subjected to any of a number of processes such as exposure, development, film formation, diffusion and cleaning. In order to perform the corresponding processing, the semiconductor wafer 15 is housed in the semiconductor wafer housing container 11 each time, transported to each manufacturing apparatus 9, and processed by each manufacturing apparatus 9 to be a product. The semiconductor wafer 15 that has been subjected to a predetermined process is stored in the semiconductor wafer storage container 11 by operating the transfer device 14.

In each process, in the local clean room 6, the periphery of the semiconductor wafer 15 is always kept at high cleanliness. The same applies when returning the semiconductor wafer 15 that has been processed through all the steps to the semiconductor wafer storage container 11.

[0010]

However, in the conventional semiconductor manufacturing apparatus, the inside of the local clean room 6 is temporary compared to the clean room 1 when the pressure of the air supply / exhaust device of the manufacturing apparatus 9 fluctuates and the semiconductor wafer storage container 11 is opened / closed. When a negative pressure is applied to the clean room 1, the transfer port 1 for the semiconductor wafer 15 is transferred from the clean room 1.
Dust, chemical substances, etc. may flow into the local clean room 6 through the gap 2 and contaminate the semiconductor wafer 15. Further, the chemical substance is the semiconductor wafer storage container 11
If the internal atmosphere is polluted and if it is transported to the next manufacturing apparatus 9 and processed as it is, it may chemically react with another chemical substance atmosphere there and pollute the semiconductor wafer 15.

When the manufacturing apparatus 9 has a positive pressure compared to the local clean room 6 due to the pressure fluctuation of the air supply / exhaust apparatus of the manufacturing apparatus 9, chemical substances and the like flow into the local clean room 6 from the manufacturing apparatus 9 and the semiconductor wafer 15 May pollute. Further, since the transfer device 14 moves at high speed between the semiconductor wafer storage container 11 and the manufacturing device 9 while holding the semiconductor wafer 15, the air flow in the local clean room 6 may be disturbed. Therefore, the chemical substances and dust that have entered the local clean room 6 may be diffused into the local clean room 6 due to the turbulence of the air flow and contaminate the semiconductor wafer 15.

The present invention has been made in order to solve such a conventional problem, and an object thereof is to provide a semiconductor manufacturing apparatus for preventing contamination of a semiconductor wafer and a semiconductor manufacturing method using this semiconductor manufacturing apparatus. To do.

[0013]

The invention according to claim 1 is
A local clean room that keeps the inside of the compartment at a predetermined cleanliness by pumping air that has been cleaned through a high-performance filter, a manufacturing apparatus installed outside the local clean room through a semiconductor wafer transfer port, and the manufacturing A semiconductor wafer storage container facing the apparatus and arranged outside the local clean room through a semiconductor wafer transfer port, and a semiconductor wafer storage container installed in the local clean room for storing the semiconductor wafer in the semiconductor wafer storage container. In a semiconductor manufacturing apparatus provided with a container and a transfer device for delivering between the manufacturing apparatus, in the local clean room, the flow rate of the clean air in the manufacturing apparatus side and the semiconductor wafer storage container side other It is characterized in that it is provided with a high-speed airflow generation device that is faster than the area.

According to a second aspect of the present invention, in the semiconductor manufacturing apparatus according to the first aspect, the high-speed airflow generating apparatus is located on the high-performance filter side of the local clean room, on the manufacturing apparatus side and on the semiconductor wafer storage container side. In addition, a deflection plate for guiding the clean air blown out from the high performance filter is installed. According to a third aspect of the present invention, in the semiconductor manufacturing apparatus according to the first aspect, in the high-speed airflow generation device, the manufacturing apparatus side and the semiconductor wafer storage container side are inclined to the high-performance filter side of the local clean room. In addition, it is characterized in that the other area is provided with a porous plate parallel to the high performance filter.

According to a fourth aspect of the present invention, in the semiconductor manufacturing apparatus according to the first aspect, the high-speed airflow generation device is characterized in that the high-performance filter in the local clean room has a substantially arc-shaped cross section. According to a fifth aspect of the present invention, in the semiconductor manufacturing apparatus according to the first aspect, the high-speed airflow generation device includes a high-performance filter that corresponds to the manufacturing apparatus side and the semiconductor wafer storage container side. , Divided into high-performance filters in other areas,
It is characterized in that the pressure loss of the high-performance filters corresponding to the manufacturing apparatus side and the semiconductor wafer storage container side is smaller than the pressure loss of the high-performance filters in other regions.

According to a sixth aspect of the present invention, in manufacturing a semiconductor by using the semiconductor manufacturing apparatus according to any one of the first to fifth aspects, the manufacturing apparatus side region and the local area in the local clean room are provided. A clean air flow-down layer having a higher speed than the other regions in the local clean room is formed in the semiconductor wafer storage container side region in the clean room.

According to a seventh aspect of the present invention, in the semiconductor manufacturing method according to the sixth aspect, the manufacturing apparatus side region in the local clean room and the semiconductor wafer storage container side region in the local clean room are in the local clean room. It is characterized in that it is formed over the entire width of.

[0018]

BEST MODE FOR CARRYING OUT THE INVENTION The present invention will be described below based on the embodiments shown in the drawings. 1 and 2 show a semiconductor manufacturing apparatus according to a first embodiment of the present invention (corresponding to claim 1, claim 2, claim 6, and claim 7). The semiconductor device 20 according to the present embodiment is installed in the clean room 50. In the clean room 50, a fan filter unit 53 including a fan 53a and a high-performance filter 53b is installed on a ceiling 52, a perforated plate 55 is installed on a floor 54, and a duct 57 equipped with an air conditioner 56 has a ceiling side space 58. To communicate with the underfloor space 59 and supply the conditioned air generated by the air conditioner 56 to the ceiling space 58.
A clean space of, for example, class 1000 is formed in the room through the fan filter unit 53.

The local clean room 21 has a high performance such as a fan 22 and an air filter (for example, an air filter having a collection rate of 99.9999% (6N) or more for dust of 0.1 μm or more) on the upper side. Install the filter 23,
The downstream side is surrounded by a wall member 24, and a clean space of, for example, class 1 is formed in the compartment.

In the local clean room 21, there is provided a transfer device 28 and a high-speed airflow generating device composed of two deflection plates 30a and 30b having a V-shaped cross section. Carrier 28
In the same manner as in the conventional art, the semiconductor wafer 38 in the semiconductor wafer storage container 37 is transferred to the semiconductor wafer storage container 37 and the manufacturing apparatus 3.
It is provided to deliver to and from the car.

The high-speed airflow generating device consisting of the two deflecting plates 30a and 30b is designed to make the speed of the clean air between the manufacturing device 35 side and the semiconductor wafer accommodating container 37 side higher than the flow speed in other regions. It is provided on the high-performance filter 23 side of the clean room 21 over the entire width of the local clean room 21. Both ends of the two deflection plates 30 a and 30 b are fixed and supported by the wall member 24 of the local clean room 21.

Here, the velocity range of the clean air between the manufacturing apparatus 35 side and the semiconductor wafer storage container 37 side is referred to as the high-speed clean air flow down layer A. The two deflecting plates 30 a and 30 b generate the clean air blown from the high-performance filter 23 in the manufacturing device 3
It is provided over the entire width of the local clean room 21 so as to be guided to the 5 side and the semiconductor wafer storage container 37 side.

Manufacturing apparatus 35 and semiconductor wafer storage container 37
As in the conventional case, the semiconductor wafer 3 is transferred through the delivery ports 25 and 26 provided in the wall member 24 of the local clean room 21.
It is arranged so that 8 items can be delivered. Manufacturing equipment 35
Then, as in the conventional case, the semiconductor wafer 38 is exposed, developed,
Any of various processes such as film formation, diffusion, and cleaning is performed. In order to perform the corresponding processing, the semiconductor wafer 38 is housed in the semiconductor wafer housing container 37 each time, transported to each manufacturing apparatus 35, and processed by each manufacturing apparatus 35 to be a product.

The semiconductor wafer accommodating container 37 is composed of a container called a front open integrated pot (FOUP) whose interior is filled with a highly clean atmosphere, as in the conventional case, and a mounting table 39 provided outside the local clean room 21. Placed on top. The operation of the semiconductor manufacturing apparatus thus configured will be described. First, the fan 22 of the local clean room 21
Is driven to take in the clean air in the clean room 50, and the high-performance filter 23 blows out the clean air having a high cleanliness of about class 1. Here, the flow velocity is 0.3
It was set to -0.35 m / s.

Then, the high-purity clean air having the high cleanliness is positively flowed down by the two deflecting plates 30a and 30b along the manufacturing apparatus 35 side and the semiconductor wafer storage container 37 side in the local clean room 21. A falling layer A is formed. Here, the velocity of the high-speed clean air flow lower layer A is 0.5-0.7 m.
/ S. In addition, the width of the high-speed clean air flow lower layer A (area indicated by hatching in FIG. 2) was set to 50 to 100 mm.

Next, the lid 37a of the semiconductor wafer storage container 37, which is transported by the automatic transport robot (AGV) 40 and placed on the mounting table 39, is placed in the local clean room 21 together with the lid 26a of the delivery port 26 of the semiconductor wafer 38. It is opened by the opener 27 provided at. And the transport device 2
8 is operated to transfer the semiconductor wafer 38 in the semiconductor wafer storage container 37 between the semiconductor wafer storage container 37 and the manufacturing apparatus 35.

At the time of this delivery, as shown in FIG. 2, the high-speed clean air falling layer A is always in the region of the local clean room 21 on the side of the manufacturing apparatus 35 and the region on the side of the semiconductor wafer container 37 like an air curtain. Because it is formed
Even if a chemical substance flows from the manufacturing apparatus 35 into the local clean room 21 or a chemical substance or dust enters the local clean room 21 from the clean room 50, the high-speed clean air flow layer A promptly causes the local clean room 21 to flow. Of the semiconductor wafer 38
Does not pollute.

Further, even if the air flow in the local clean room 21 is disturbed by the operation of the transfer device 28, before the chemical substances and dust diffuse in the local clean room 21, the high-speed clean air flow-down layer A allows the local clean room 21 to move quickly. It is pushed down and does not contaminate the semiconductor wafer 38. Since the semiconductor wafer 38 is operated above the transfer portion of the transfer device 28, a predetermined degree of cleanliness must be formed. However, below the transfer portion of the transfer device 28, dust and chemical substances are transferred to the semiconductor wafer 38. They can be reliably discharged without winding up.

A semiconductor wafer 38 which has been subjected to a predetermined process
Operates the transfer device 28 to operate the semiconductor wafer storage container 37.
It is stored inside. As described above, according to the present embodiment,
Local clean room 2 serving as a delivery port for semiconductor wafers 38
1 and a region on the side of the manufacturing apparatus 35 and the semiconductor wafer storage container 3
As shown in FIG. 2, the area on the 7 side forms the high-speed clean air falling layer A composed of a descending flow faster than the other areas like an air curtain. Inflow of chemicals into the
Even if chemical substances and dusts enter the local clean room 21 from the clean room 50, these are quickly discharged by the high-speed clean air falling layer A, and the semiconductor wafer 3
It does not pollute 8.

Further, before diffusion of chemical substances and dust due to the turbulence of the air flow by the transfer device 28, these are swiftly swept toward the lower part of the local clean room 21 by the high-speed clean air flow lower layer A, and the semiconductor wafer 38. Does not pollute. In the present embodiment, two deflector plates 30a and 30b having a V-shaped cross section are used as the high-speed airflow generation device.
However, the clean air blown out from the high-performance air filter 23 is supplied to the manufacturing apparatus 35 in the local clean room 21.
The region on the side of the semiconductor wafer container 37 and the region on the side of the semiconductor wafer storage container 37 are not limited to this as long as they can form the high-speed clean air falling layer A composed of a descending flow faster than the other regions. It may be an arc-shaped plate.

Further, in the present embodiment, an automatic transfer robot (AGV) is used as a transfer means for the semiconductor wafer storage container 37.
Although the case of using 40 has been described, the present invention is not limited to this,
For example, RGV, OHT, PGV or the like may be used.
FIG. 3 shows a semiconductor manufacturing apparatus according to the second embodiment of the present invention (corresponding to claim 1, claim 3, claim 6, and claim 7).

In the semiconductor device 60 according to this embodiment, a cover 61 made of a perforated plate that covers the entire surface of the high-performance filter 23 on the outlet side is arranged on the outlet side of the high-performance filter 23 to form a high-speed airflow generator. This is the difference from the first embodiment. The cover 61 is inclined plates 62 and 63 formed of perforated plates arranged on the side of the manufacturing apparatus 35 and the side of the semiconductor wafer storage container 37.
And a flat plate 64 made of a perforated plate that connects the two in parallel with the high performance filter 23.

The aperture ratios of the inclined plates 62 and 63 on the side of the manufacturing apparatus 35 and the semiconductor wafer storage container 37 are larger than the aperture ratio of the flat plate 64 in the other regions. Therefore, the clean air blown out from the high performance filter 23 is
A large amount of gas flows to the manufacturing apparatus 35 side and the semiconductor wafer storage container 37 side. As a result, the cover 61 can exhibit the same action as the two deflecting plates 30a and 30b in the first embodiment.

Also in this embodiment, it is possible to obtain the same effects as those of the first embodiment. In the present embodiment, the case where the cover 61 is composed of the inclined plates 62 and 63 made of a perforated plate and the flat plate 64 made of a perforated plate and the aperture ratios of the both are made different has been described. In the same manner, stacking another perforated plate on the flat plate 64, the inclined plates 62, 6
The aperture ratio may be smaller than the aperture ratio of 3. Further, the cover 61 may be a cover having an arcuate cross section, and the aperture ratios may be similarly changed.

Further, the cover 61 is made up of an inclined plate 6 made of a perforated plate.
2, 63 and the flat plate 64 made of a perforated plate, and the case where the aperture ratios of the both are different has been described, but even if the aperture ratios of both are the same, the air flow due to the pressure loss of the perforated plate is
It comes out almost vertically from the surface of the perforated plate. As a result, the cover 61 includes the two deflection plates 3 in the first embodiment.
It is possible to achieve the same effect as 0a and 30b.

The cover 61 may not be a linear member such as the inclined plates 62, 62 and the flat plate 64, but may be a member having a curved contour such as a kamaboko shape. FIG. 4 shows a semiconductor manufacturing apparatus according to the third embodiment of the present invention (corresponding to claim 1, claim 4, claim 6, and claim 7).

The semiconductor device 70 according to the present embodiment is different from the first embodiment in that the high-performance filter 71 having an arcuate cross section is a high-speed airflow generating device. The high-performance filter 71 having an arc-shaped cross section is composed of a filter frame 72 having an arc-shaped cross section and a filter 73 arranged along the filter frame 72.

Therefore, a large amount of clean air blown out from the high-performance filter 71 flows to the manufacturing apparatus 35 side and the semiconductor wafer storage container 37 side. As a result, the high-performance filter 71 having an arc-shaped cross section can achieve the same action as the two deflecting plates 30a and 30b in the first embodiment. Also in the present embodiment, the same operational effects as those of the first embodiment can be obtained.

A high-performance filter 71 having an arc-shaped cross section
In the adjustment of the blowout amounts on the side of the manufacturing apparatus 35 and the side of the semiconductor wafer storage container 37 in (1), it is advisable to make the pressure loss of the filter 73 that hits the side of the manufacturing apparatus 35 and the side of the semiconductor wafer storage container 37 smaller than the other regions. FIG. 5 shows a semiconductor manufacturing apparatus according to the fourth embodiment of the present invention (corresponding to claim 1, claim 5, claim 6, and claim 7).

In the semiconductor device 80 according to the present embodiment, a high performance filter 81 is used as the high performance filters 81b and 81c corresponding to the manufacturing device 35 side and the semiconductor wafer storage container 37 side.
And a high-performance filter 81a in the other region,
The first embodiment is different from the first embodiment in that the pressure loss of the high-performance filters 81b and 81c corresponding to the manufacturing apparatus 35 side and the semiconductor wafer storage container 37 side is smaller than the pressure loss of the high-performance filters 81a in other regions. Be different.

According to this embodiment, the velocity of the air flow blown from the high-performance filter 81 corresponding to the manufacturing apparatus 35 side and the semiconductor wafer storage container 37 side is blown out from the high-performance filter 81a in the other regions. It becomes faster than the speed of the air flow, and the manufacturing apparatus 35 side and the semiconductor wafer storage container 37
It becomes possible to flow a high-speed air flow to and from the side. Also in the present embodiment, the same operational effects as those of the first embodiment can be obtained.

[0042]

As described above, according to the present invention, a high-speed clean air falling layer having a high-speed flow toward the manufacturing apparatus side and the semiconductor wafer storage container side is formed in a local clean room,
Even if a chemical substance or dust is invaded, it can be promptly pushed out toward the lower part of the local clean room and can be prevented from adhering to the semiconductor wafer, so that the contamination of the semiconductor wafer can be minimized. In addition, before the chemical substances and dust due to the turbulence of the air flow due to the turbulence of the air flow in the local clean room are diffused, they are swiftly swept toward the lower part of the local clean room by the high-speed clean air downflow layer to prevent adhesion to semiconductor wafers. Since it can be prevented, the contamination of the semiconductor wafer can be minimized.

[Brief description of drawings]

FIG. 1 is an explanatory diagram corresponding to a cross-sectional view of a semiconductor manufacturing apparatus according to a first embodiment of the present invention.

FIG. 2 is an explanatory diagram corresponding to a plan view of the semiconductor manufacturing apparatus according to the first embodiment of the present invention.

FIG. 3 is an explanatory diagram corresponding to a cross-sectional view of a semiconductor manufacturing apparatus according to a second embodiment of the present invention.

FIG. 4 is an explanatory diagram corresponding to a sectional view of a semiconductor manufacturing apparatus according to a third embodiment of the present invention.

FIG. 5 is an explanatory diagram corresponding to a cross-sectional view of a semiconductor manufacturing apparatus according to a fourth embodiment of the present invention.

FIG. 6 is an explanatory diagram corresponding to a cross-sectional view of a conventional conductor manufacturing apparatus.

[Explanation of symbols]

20,60,70,80 Semiconductor manufacturing equipment 21 Local clean room 22 fans 23,71 High-performance filter 24 wall members 25,26 Delivery port 26a lid 27 opener 28 Conveyor 30a, 30b Two deflection plates having a V-shaped cross section 35 Manufacturing equipment 37 Semiconductor Wafer Storage Container 37a lid 38 Semiconductor wafer 39 table 40 Automatic transfer robot (AGV) 50 clean room 52 ceiling 53 Fan filter unit 53a fan 53b High-performance filter 54 floors 55 perforated board 56 Air conditioner 57 piping 58 Ceiling side space 59 Underfloor space 61 Cover 62, 63 inclined plate 64 flat plate 72 filter frame 73 Filter 81, 81a, 81b, 81c High-performance filter A high-speed clean air flow lower layer

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Nao Jouma             3-4-1 Yurakucho, Chiyoda-ku, Tokyo             Machine Industry Co., Ltd. F-term (reference) 5F031 CA02 FA01 FA11 GA58 NA02                       NA13 NA16 NA17 PA26

Claims (7)

[Claims] 1. A local clean room in which air cleaned through a high-performance filter is pumped by a fan to maintain a predetermined cleanliness in a compartment, and a manufacturing process installed outside the local clean room via a semiconductor wafer transfer port. An apparatus, a semiconductor wafer storage container facing the manufacturing apparatus and arranged outside the local clean room through a semiconductor wafer transfer port, and a semiconductor wafer in the semiconductor wafer storage container installed in the local clean room In a semiconductor manufacturing apparatus comprising a semiconductor wafer storage container and a transfer device for transferring between the manufacturing apparatus, the clean air of the manufacturing apparatus side and the semiconductor wafer storage container side in the local clean room. It is characterized by being equipped with a high-speed airflow generator that makes the flow-down speed faster than other areas. That semiconductor manufacturing equipment. 2. The semiconductor manufacturing apparatus according to claim 1, wherein the high-speed airflow generation device includes the high-performance filter on the high-performance filter side of the local clean room, and on the manufacturing device side and the semiconductor wafer storage container side. A semiconductor manufacturing apparatus, characterized in that a deflecting plate for guiding clean air blown from the device is installed. 3. The semiconductor manufacturing apparatus according to claim 1, wherein in the high-speed airflow generation device, the manufacturing apparatus side and the semiconductor wafer storage container side are inclined to the high-performance filter side of the local clean room, A semiconductor manufacturing apparatus, characterized in that a porous plate is provided in the other region in parallel with the high performance filter. 4. The semiconductor manufacturing apparatus according to claim 1, wherein the high-speed airflow generation device is configured such that the high-performance filter in the local clean room has a substantially arcuate cross section. 5. The semiconductor manufacturing apparatus according to claim 1, wherein the high-speed airflow generation device includes the high-performance filter, a high-performance filter corresponding to the manufacturing apparatus side and the semiconductor wafer storage container side, and The pressure loss of the high-performance filters corresponding to the manufacturing apparatus side and the semiconductor wafer storage container side is smaller than the pressure loss of the high-performance filters in the other areas. A semiconductor manufacturing apparatus characterized by: 6. When manufacturing a semiconductor using the semiconductor manufacturing apparatus according to claim 1, the manufacturing apparatus side region in the local clean room and the semiconductor wafer in the local clean room A method for manufacturing a semiconductor, characterized in that a clean air falling layer having a higher speed than other areas in the local clean room is formed in a storage container side area. 7. The semiconductor manufacturing method according to claim 6, wherein the manufacturing apparatus side region in the local clean room and the semiconductor wafer storage container side region in the local clean room are formed over the entire width in the local clean room. A semiconductor manufacturing method, comprising: