JP2003007993A - Photodetector - Google Patents

Abstract

PROBLEM TO BE SOLVED: To suppress the occurrence of light crosstalk due to recessed and projected sections formed in the light incoming area of a photodetector. SOLUTION: The photodetector 1 is provided with a semiconductor substrate 5, and a plurality of photodiodes 2a-2d formed and arranged at desired positions on the substrate 5. Trench grooves 20 are respectively formed around the photodiodes 2a-2d, and an interchannel area is formed at a place where the interval between photodiodes is large. Since no broad trench groove is formed, the formation of recessed sections or projected sections in the upper surface sections of the grooves 20 can be suppressed in a step of packing a filler 21 in the grooves 20.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photodetector element having a plurality of photodiodes formed therein.

[0002]

2. Description of the Related Art Japanese Unexamined Patent Publication No. 62-33454 discloses a photodiode array in which a plurality of photodiodes are arranged. A trench groove for element isolation is formed between the photodiodes, which suppresses the occurrence of optical crosstalk between the photodiodes. The plurality of photodiodes are not necessarily arranged at the same pitch. For example, in a particle size distribution detector, a spectroscopic analyzer, etc., a photodiode array in which a plurality of photodiodes are arranged at different pitches is used.

[0003]

However, in the case of manufacturing a photodiode array composed of a plurality of photodiodes arranged at such different intervals as described above, when a trench groove having a groove width matching the interval between the photodiodes is formed, it is manufactured. Due to the process, the groove depth will change,
That phenomenon was occurring. That is, when the groove width is large, a deep trench groove is formed, and when the groove width is small, a shallow trench groove is formed. When a photodiode array is formed by filling a trench groove having such a different groove width and groove depth (particularly, a trench groove having a wide groove width) with a light blocking material, the top surface of the filled light blocking material is a recess or a protrusion. It was often formed in parts. Such uneven portions have been a cause of light crosstalk. Therefore, the present invention provides a photodetection element in which a plurality of photodiodes are formed at desired positions, and a photodetection element in which occurrence of optical crosstalk between these photodiodes is suppressed. It is in.

[0004]

In order to solve the above problems, a photodetector according to the present invention has a semiconductor photoelectric conversion layer having a carrier concentration lower than that of the semiconductor substrate and formed on the upper surface of the semiconductor substrate. In the photodetector element in which the photodiode is formed on the semiconductor substrate, the semiconductor conductive region having a carrier concentration higher than that of the semiconductor photoelectric conversion layer and having a conductivity type opposite to that of the semiconductor substrate is arranged on the semiconductor substrate. Among the plurality of photodetection areas, a planar inter-channel area having a predetermined three-dimensional spread is formed between at least two photodetection areas. The semiconductor layer on the semiconductor substrate including the region is located at the boundary between the photodetection area and the inter-channel area, and at locations where the photodetection areas are adjacent to each other. The trench groove is formed along the inter-channel line between them, and the trench groove is filled with a filler, and the semiconductor layer including the semiconductor photoelectric conversion layer and the semiconductor conductive region in the light detection area serves as a photodiode. It is characterized by being made functional. According to such a photo-detecting element, a wide trench groove is not formed in the place where the inter-channel area is formed between the photo-detecting areas. Thereby, it becomes possible to suppress the formation of the concave portion or the convex portion on the upper surface portion of the trench groove filled with the filling material. It should be noted that "when adjacent to each other" does not mean that the adjacent spot is always present in the photodetection element.

The plurality of photodetection areas are set in an array on the semiconductor substrate, the inter-channel areas are set in at least two places, and any one inter-channel area is wider than any other inter-channel area. Good.

The filler preferably contains a light-shielding resin. This makes it possible to suppress light crosstalk between the light detection areas.

As the photo-detecting element, a semiconductor conductive region is formed in a portion surrounded by a peripheral portion of each photo-detecting area, and a junction interface between the semiconductor conductive region and the semiconductor photoelectric conversion layer is an upper surface of the semiconductor layer on the semiconductor substrate. May be located at.

Further, as the photo-detecting element, the semiconductor conductive region is formed on the entire surface of the photo-detecting area, and the junction interface between the semiconductor conductive region and the semiconductor photoelectric conversion layer is located on the inner wall surface of the trench groove. May be. By forming the trench groove in this manner, the photodiodes are isolated from each other.

It is desirable that the trench groove reaches the semiconductor substrate. This makes it possible to further suppress the carriers generated in each photodiode from moving to the adjacent photodiode or the inter-channel area.

It is desirable that the inter-channel area be covered with a light-shielding resin. As a result, light is prevented from entering the inter-channel area, so that it is possible to prevent light from seeping out to adjacent photodiodes.

Above the filling material filled in the trench groove,
Wiring connected to the semiconductor conductive region may be provided. As a result, since the photodiode does not exist in the region directly below, it is possible to prevent noise output from the wiring as an electromagnetic wave from entering the photodiode.

The semiconductor conductive region in the inter-channel area is preferably connected to the ground potential. This allows
The charges generated in the inter-channel area do not adversely affect adjacent photodiodes.

The method of manufacturing a photodetection element according to the present invention comprises a first step of crystal-growing a semiconductor photoelectric conversion layer having a carrier concentration lower than that of the semiconductor substrate, and a step of forming a semiconductor photoelectric conversion layer on the upper surface of the semiconductor photoelectric conversion layer. A second step of forming a semiconductor conductive region having a carrier concentration higher than that of the semiconductor photoelectric conversion layer and having a conductivity type opposite to that of the semiconductor substrate, and a semiconductor along the boundary between the photodetection area and the inter-channel area and the inter-channel line. A plurality of steps are provided on the semiconductor substrate, including a third step of forming a trench groove in the semiconductor layer on the semiconductor substrate including the photoelectric conversion layer and the semiconductor conductive region, and a fourth step of filling the trench groove with a filler. Between at least two of the photo-detection areas, a planar inter-channel area having a predetermined three-dimensional spread is formed adjacent to each other. .

[0014]

DETAILED DESCRIPTION OF THE INVENTION A photodetector and a method of manufacturing the same according to an embodiment of the present invention will be described below with reference to the drawings. In the following description, the same or corresponding parts will be denoted by the same reference symbols, without redundant description.

FIG. 1A is a plan view of the photodetector according to the first embodiment. 1B is a side sectional view taken along the line AA ′ of the photodetector shown in FIG. Figure 2
FIG. 2 is a partially enlarged view of the photodetector element shown in FIG.
The photodetecting element 1 has a semiconductor substrate 5, four photodiodes 2a to 2d, and an inter-channel area 25 as main constituent elements.

As shown in FIG. 1 (b), the photodiodes 2a to 2d, which are the light detection areas, have an n-type semiconductor layer 6 (semiconductor photoelectric conversion layer) formed on a semiconductor substrate 5 and an n-type semiconductor, respectively. P-type semiconductor layer 7 formed on the layer 6
(Semiconductor conductive region). The constituent materials, impurity concentrations, and layer thicknesses of the semiconductor substrate 5, the n-type semiconductor layer 6, and the p-type semiconductor layer 7 are as shown in Table 1.
The semiconductor substrate 5 is a high carrier concentration n-type semiconductor, on which a low carrier concentration n-type semiconductor layer 6 is further formed, and a high carrier concentration p-type semiconductor layer 7 is further formed thereon. A pn junction 8 is formed at the boundary between the p-type semiconductor layer 7 and the n-type semiconductor layer 6 (see FIG. 2).

[Table 1]

Since the n-type semiconductor layer 6 having a low carrier concentration and the p-type semiconductor layer 7 having a high carrier concentration are in contact with each other at the pn junction portion 8, they spread from the interface of the pn junction portion 8 toward the n-type semiconductor layer 6 side. The n-type semiconductor layer 6 functions as a light absorption layer. Note that these conductivity types may be reversed. The light incident areas of the photodiodes 2a to 2d of the photodetecting element 1 are covered with an insulating film 13 (silicon oxide film or silicon nitride as a thermal oxide film).

A trench groove 20 having a groove width 32 is formed around each of the four photodiodes 2a to 2d. The groove width of the trench groove 20 is set in a range (1 to 10 μm) in which it is difficult to form an uneven portion as described later (the advantages of forming the groove width in a predetermined range will also be described later). An insulating film 23 is also formed on the inner surface of the trench groove 20. The insulating film 23 is the same as the insulating film 13 described above, and these are continuously formed. The insulating film 23 formed on the inner surface of the trench groove 20 has the effects of suppressing the dark current in the trench groove 20 and protecting the pn junction 8.

In the photodetector 1 according to the first embodiment, the photodiodes 2a to 2d are element-isolated by the trench groove 20 (trench isolation). In particular, this trench groove 20 extends to the semiconductor substrate 5, as shown schematically in FIG. As a result, carriers generated in each photodiode move to an adjacent photodiode or an inter-channel area,
That is, carrier crosstalk can be suppressed. The deeper the groove, the greater the effect of suppressing carrier crosstalk.

Further, the trench groove 20 is filled with a light-shielding resin (eg, an insulating resin such as a black resist in which carbon fine particles coated with an insulating coating in a photosensitive resin are mixed) 21. It is possible to further suppress light crosstalk between the photodiodes. By embedding this filling material, there is also an effect that strength is given to the entire photodetecting element 1.

In the photodetector 1 according to the first embodiment, the photodiodes are arranged and formed at different intervals.
That is, the distance 24a (5 μm) between the photodiode 2a and the photodiode 2b is different from the distance 24b (50 μm) between the photodiode 2c and the photodiode 2d. Interval 24b is significantly larger than Interval 24a,
Further, since the trench groove 20 is formed with a groove width 32 within a predetermined range, an inter-channel area 25 that does not function as a photodiode is formed between the photodiode 2b and the photodiode 2c (in contrast, two photodiodes are provided). Are adjacent to each other, the space between them is called an inter-channel line).

Further, the photo-detecting elements 1 composed of the photodiodes 2a to 2d arranged at different intervals can similarly correspond to the light groups emitted at different intervals. For example, in a photodetector used in a particle size distribution detector, a spectroscopic analyzer, or the like, a plurality of photodiodes 2a to 2d are arranged at predetermined different intervals.

As shown in FIGS. 1 (a) and 1 (b), the photodetector 1 includes a back electrode 11 and top electrodes 10a-10.
d is formed. The back surface electrode 11 is formed on the bottom surface of the photodetecting element 1 and is connected to each n-type semiconductor layer 6 of the plurality of photodiodes 2a to 2d via the semiconductor substrate 5 which is a high carrier concentration n-type semiconductor. .

The upper electrodes 10a to 10d correspond to the photodetector 1
Of the plurality of photodiodes 2a to 2d and are connected to the respective p-type semiconductor layers 7 of the plurality of photodiodes 2a to 2d via the wirings 9a to 9d. As shown in FIG. 2, a contact hole 14a is formed in the insulating film 13 that covers the p-type semiconductor layer 7.
14d are formed. One ends of the wirings 9a to 9d penetrate the contact holes 14a to 14d and are connected to the p-type semiconductor layer 7, and the other ends of the wirings 9a to 9d are connected to the upper surface electrodes 10a to 10d. Has been done. The current generated by applying a reverse bias voltage and absorbing light in the depletion layer formed in the pn junction 8 is
It is taken out from the top surface electrodes 10a to 10d and the back surface electrode 11.

3 (a) to 3 (d) and 4 (a) to 4
5D, 5 </ b> A, and 5 </ b> B are views showing respective manufacturing steps of the photodetecting element according to the embodiment. In manufacturing the photodetecting element 1, as shown in FIG. 3A, first, the n-type semiconductor layer 6 having a thickness of about 5 μm is formed on the semiconductor substrate 5 having a thickness of 350 μm by the epitaxial growth method.

Next, as shown in FIG. 3B, B (boron) as a p-type impurity is added from the exposed surface side of the n-type semiconductor layer 6 by diffusion or ion implantation, and the surface layer portion of the n-type semiconductor layer 6 is added. The p-type semiconductor layer 7 having a thickness of 0.5 μm is formed on the p-type semiconductor layer 7. Therefore, the thickness of the n-type semiconductor layer 6 is 4.5 μm (in the figure, the semiconductor substrate 5, the n-type semiconductor layer 6, and the p-type semiconductor layer 7 are depicted with different thicknesses from the actual thickness for the sake of clarity. is there). By this step, a photodiode having the pn junction 8 is formed.

Next, as shown in FIG. 3C, the surface of the p-type semiconductor layer 7 is thermally oxidized by heat treatment in an oxidizing atmosphere to form an insulating film 13 (SiO ₂ ) having a thickness of 0.1 μm. Form. It may be deposited by using a CVD method (chemical vapor deposition method) or a sputtering method. In addition, this insulating film 13 is S
It may be a multilayer of an iN film, a SiO ₂ film and a SiN film.

Next, as shown in FIG. 3D, the trench groove 2 having a groove width of 32: 5 μm and a groove depth of 33:15 μm is formed at a predetermined position by ICP (inductively coupled plasma) etching.
Form 0. Groove width 32 and groove depth 3 of the trench groove 20
All 3 are formed the same. The etching is performed after forming a mask pattern on the insulating film 13 by using the photolithography technique and removing the insulating film. The trench groove 20 is formed to a depth of 10 μm into the semiconductor substrate 5 from the boundary surface between the semiconductor substrate 5 and the n-type semiconductor layer 6. In this ICP (inductively coupled plasma) etching,
Since fine processing is possible, the groove width 32 of the trench groove 13
It is also possible to make the width narrower.

Next, as shown in FIG. 4A, heat treatment (800 ° C. to 1100 ° C.) is performed in an oxidizing atmosphere to expose the surface of the semiconductor layer (Si) exposed in the step shown in FIG. 3D. ) Is thermally oxidized to form the insulating film 23. The insulating film 23 is the same as the insulating film 13 formed in the step shown in FIG. 3C and is provided so as to be continuous with each other.

Next, as shown in FIG. 4B, FIG.
The light shielding resin 21 is filled in the trench groove 20 formed by the process shown in FIG. This filling step is performed by spin coating. In the spin coating method, the light shielding resin 21 is supplied to the upper surface 50a of the rotating preform substrate 50, and is spread over the entire upper surface 50a of the preform substrate 50 by centrifugal force. A screen printing method can also be used as the filling step.

Next, as shown in FIG. 4C, after pre-baking the light shielding resin 21 filled in the trench groove 20,
The light incident area is removed by photo etching. Light-shielding resin 2
1 is cured, and finally, as shown in FIG. 4D, wirings 9a to 9d (Al or Au), wire bonding upper electrodes 10a to 10d (Al), and back electrode 11 (Au).
Are formed by a sputtering method or a vapor deposition method to complete the photodetector element 1. Regarding the steps shown in FIGS. 4C and 4D, as shown in FIG. 5A, after the pattern is formed by the photolithography technique, the light shielding resin 21 on and around the trench groove is left. Alternatively, it may be etched. In this case, the upper surface electrodes 10a to 10d and the wiring 9a
9d and the back surface electrode 11 are formed as shown in FIG.

FIGS. 6 (a) and 6 (b) are diagrams showing the action and effect of the photo-detecting element according to the present invention. 6A and 6B, in the manufacturing process shown in FIG. 3D, a trench groove 20 having a wide groove width 32 and a groove depth 33 is provided between the photodiodes 2b and 2c. The photodetection elements 101 and 201 formed and formed are shown. Furthermore, FIG.
4A shows the light-shielding resin 21 in the manufacturing process shown in FIG.
The photodetector element 101 is manufactured by filling the above with a spin coat method.

As is apparent from FIG. 6A, in the photo-detecting element 101, the trench groove 2 having a wide groove depth 33 is formed.
The light-shielding resin 21 filled with 0 has a recess 80 formed on its upper surface. In the case of the spin coating method, since the light shielding resin 21 filled in the wide trench groove 21 is scattered by the rotation, such a recess 80 is formed. The concave portion 80 causes diffused reflection of light, which causes crosstalk of light.

Further, there is also a problem that such a recess 80 becomes an obstacle during patterning by the photolithography technique in the manufacturing process (as a post process) shown in FIG. 5A.

In the photodetector 1 according to the present embodiment, the trench groove 20 is formed so as to form the inter-channel area 25 (the inter-channel area 25 is inevitably formed by setting the groove width within the predetermined range. However, a wide trench groove is not formed. Accordingly, when the filling is performed by the spin coating method, the translucent resin 21 by rotation is used.
Can be suppressed. As described above, in the photodetecting element 1, it is difficult for unevenness to be formed on the upper surface of the light shielding resin 21 with which the trench groove 20 is filled. As a result, light crosstalk between the photodiodes is suppressed. Further, as described above, it does not adversely affect the subsequent process.

FIG. 7A is a plan view of the photodetector according to the second embodiment. FIG. 7B is a side sectional view taken along the line AA ′ of the photodetector shown in FIG. In the photodetector element 301, the regions excluding the light incident regions of the photodiodes 2a to 2d are covered with the light shielding resin 321. Therefore, the inter-channel area 25 exposed in the photodetector 1 according to the first embodiment is covered with the light blocking resin 321 in the photodetector 301 according to the second embodiment and is not exposed. As a result, the inter-channel area 2
5 prevents the incidence of light to the adjacent photodiodes 2
It is possible to prevent light from seeping out to b and 2c and further suppress light crosstalk.

FIG. 8 is a side sectional view of the photo-detecting element according to the third embodiment. In the photo detection element 401, the inter-channel area 25 is connected to the ground potential via the wiring 485. A contact hole 484 is formed in the insulating film 13 on the inter-channel area 25 so that the inter-channel area 25 can be electrically connected to the p-type semiconductor layer 7. One end of the wiring 485 has the contact hole 484.
Is connected to the p-type semiconductor layer 7 in the inter-channel area 25, and the other end of the wiring 485 is connected to the ground potential. With such a configuration, carriers generated in the inter-channel area 25 escape through the wiring 485, so that the adjacent photodiodes 2b and 2c are not adversely affected.

FIG. 9 is a side sectional view of the photo-detecting element according to the fourth embodiment. The light detection element 501 is a light detection element in which a plurality of photodiodes 502a to 502d are locally formed by selective diffusion. The p-type semiconductor layer 507 (semiconductor conductive region) is formed in a portion surrounded by the peripheral portion of the photodetection area. The junction interface between the n-type semiconductor layer 506 (semiconductor photoelectric conversion layer) and the p-type semiconductor layer 507 is located on the upper surface of the semiconductor layer on the semiconductor substrate 5.

A trench groove 20 having the same width is formed between the photodiodes 502a to 502d. Since the photodiodes in the photo-detecting element 501 are already element-isolated, the trench groove 20 is provided not for trench isolation but for the purpose of further suppressing carrier crosstalk and light crosstalk.
In the photo-detecting element 501 as shown in the fourth embodiment, the gap between the photodiode 502b and the photodiode 502c is large, but an inter-channel area 525 is formed between them (the trench groove 20 having a predetermined range width is formed). The inter-channel area 525 is inevitably formed by soaking). As a result, a wide trench groove 520 is not formed as it is, so that no concave portion or convex portion is formed on the upper surface of the trench groove 520.

FIG. 10A is a plan view of the photo-detecting element according to the fifth embodiment. FIG. 10 (b) shows FIG. 10 (a).
FIG. 3 is a side sectional view of the photodetector shown in FIG. The photo-detecting element 601 has nine photodiodes 602a to 602i arranged in three rows and three columns. A trench groove 620 is provided between the photodiodes 602a to 602i.
An inter-channel area 625 surrounded by is formed. Similar to the photodetector element 401 according to the third embodiment, the upper surface of the inter-channel area 625 is covered with the light-shielding resin 621 to prevent light from entering the inter-channel area 625.

As shown in FIG. 10A, one ends of wirings 609a to 609i are connected to the photodiodes 602a to 602i, and these wirings 602a to 602i are connected.
The other end of is connected to the electrodes 610a to 610i. The wirings 609a to 609i are connected to the photodiodes 602a to 602a.
Since it is provided so as to crawl between 602i, that is, on the inter-channel area 625 and on the trench groove 620 on both sides of the inter-channel area 625, as the number of photodiodes increases, the number of wirings provided therebetween also increases. As a result, it becomes necessary to widen the width 630 between the photodiodes, but in the photodetector 601 according to the fourth embodiment, the trench groove 620 is not formed in accordance with the width 630, and the description will be given with reference to FIG. All the trench grooves 620 are formed in accordance with the groove width in which such uneven portions are not formed (as a result, the inter-channel area 525 is formed). Thereby, it is possible to prevent the uneven portion from being formed in the step of filling the trench groove 620 with the light-shielding resin, and to form the photodetection element 601 in which light crosstalk is suppressed.

Although the present invention has been specifically described based on its embodiments, the present invention is not limited to the above embodiments for carrying out the present invention, and falls within the scope of the claims of the present invention. It is possible to change the arrangement, configuration, shape, size, etc., including all changes of the applicable invention. For example, in the above-described embodiment, the example shown in FIGS. 1 and 9 is given as an example of the arrangement positions and the arrangement intervals of the plurality of photodiodes. For each of the intervals, photodetectors with different sizes are conceivable.

[0043]

In the photodetector according to the present invention, an inter-channel area adjacent to each of the plurality of photodiodes and having a predetermined three-dimensional spread is formed between at least two of the photodiodes. In the step of filling the filling material, it is possible to suppress the formation of the concave portion or the convex portion on the upper surface portion of the trench groove. Furthermore, this makes it possible to suppress the occurrence of light crosstalk due to the uneven portion formed in the light incident region of the photodetector.

[Brief description of drawings]

FIG. 1A is a plan view of a photodetector element according to a first embodiment. 1B is a side sectional view taken along the line AA ′ of the photodetector shown in FIG.

FIG. 2 is a partially enlarged view of the photodetector shown in FIG. 1 (b).

3 (a) to 3 (d) are views showing respective manufacturing steps of the photodetecting element according to the embodiment.

4A to 4D are diagrams showing respective manufacturing steps of the photodetecting element according to the embodiment.

5A and 5B are diagrams showing respective manufacturing steps of the photodetecting element according to the embodiment.

6 (a) to 6 (c) are diagrams showing the action and effect of the photodetector according to the present invention.

FIG. 7A is a plan view of a photodetector element according to a second embodiment. FIG. 7B is a side sectional view taken along the line AA ′ of the photodetector shown in FIG.

FIG. 8 is a side sectional view of a photodetector element according to a third embodiment.

FIG. 9 is a side sectional view of a photodetector element according to a fourth embodiment.

FIG. 10A is a plan view of a photodetector element according to a fourth embodiment. 10B is a side sectional view taken along the line AA ′ of the photodetector shown in FIG.

[Explanation of symbols]

1, 101, 301, 401, 501 ... Photodetector element, 2
a ... 2d ... photodiode, 5 ... semiconductor substrate, 6 ... n-type semiconductor layer, 7 ... p-type semiconductor layer, 8 ... pn junction, 9a-
9d ... Wiring, 20 ... Trench groove, 21 ... Filler (light-shielding resin), 25 ... Area between channels.

Continued front page    (72) Inventor Akira Sakamoto             1 Hamamatsuho, 1126 Nomachi, Hamamatsu City, Shizuoka Prefecture             Tonics Co., Ltd. F-term (reference) 4M118 AA05 BA06 BA30 CA03 CA25                       CA40 EA20 FA27 FA28                 5F032 AA35 AA45 AA50 AA66 AA69                       CA21 DA09 DA10 DA25 DA53                 5F049 MA01 NA08 NB07 QA03 QA20                       RA02 RA04

Claims (10)

[Claims] 1. A semiconductor photoelectric conversion layer having a carrier concentration lower than that of the semiconductor substrate is formed on a semiconductor substrate, and an upper surface of the semiconductor photoelectric conversion layer has a carrier concentration higher than that of the semiconductor photoelectric conversion layer and has a conductivity type opposite to that of the semiconductor substrate. In the photodetector element in which a photodiode is formed on the semiconductor substrate by arranging the semiconductor conductive region of, at least two of the photodetection areas among the plurality of photodetection areas set on the semiconductor substrate In between, a planar inter-channel area adjacent to each of them and having a predetermined three-dimensional spread is set, and in the semiconductor layer on the semiconductor substrate including the semiconductor photoelectric conversion layer and the semiconductor conductive region, The boundary between the photo-detection area and the inter-channel area, and the inter-channel line between the photo-detection areas where they are adjacent to each other And a trench groove is formed along the trench, and the trench groove is filled with a filling material, and the semiconductor layer including the semiconductor photoelectric conversion layer and the semiconductor conductive region in the photodetection area functions as the photodiode. A photodetection element characterized by being made. 2. The plurality of light detection areas are set in an array on the semiconductor substrate, the inter-channel areas are set in at least two places, and any one of the inter-channel areas is set in another one. The photodetector according to claim 1, which is wider than the inter-channel area. 3. The filling material contains a light-shielding resin.
Alternatively, the photodetector element according to item 2. 4. The semiconductor conductive region is formed in a portion surrounded by a peripheral portion of each of the light detection areas, and a junction interface between the semiconductor conductive region and the semiconductor photoelectric conversion layer is a semiconductor layer on the semiconductor substrate. The photodetector element according to claim 1, which is located on the upper surface. 5. The semiconductor conductive region is formed on the entire surface of the light detection area, and a junction interface between the semiconductor conductive region and the semiconductor photoelectric conversion layer is located on an inner wall surface of the trench groove. 3. The photodetector according to any one of 3 above. 6. The photodetector element according to claim 1, wherein the trench groove reaches the semiconductor substrate. 7. The photodetector according to claim 1, wherein the inter-channel area is covered with a light-shielding resin. 8. The photodetection element according to claim 1, wherein a wiring connected to the semiconductor conductive region is provided on the filling material with which the trench groove is filled. 9. The photodetector element according to claim 1, wherein the semiconductor conductive region in the inter-channel area is connected to a ground potential. 10. A first step of crystal-growing a semiconductor photoelectric conversion layer having a carrier concentration lower than that of the semiconductor substrate, and a carrier higher than the semiconductor photoelectric conversion layer on the upper surface of the semiconductor photoelectric conversion layer. A second step of forming a semiconductor conductive region having a concentration and a conductivity type opposite to that of the semiconductor substrate; the semiconductor photoelectric conversion layer and the semiconductor so as to be along the boundary between the photodetection area and the inter-channel area and the inter-channel line. A third step of forming a trench groove in a semiconductor layer on the semiconductor substrate including a conductive region; and a fourth step of filling the trench groove with a filler, Between at least two of the light detection areas, planar inter-channel areas adjacent to each other and having a predetermined three-dimensional spread are set. Manufacturing method of that photodetector element.