JP2003007746A - Method and equipment for inspecting semiconductor element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To increase the reliability of inspection by automating the inspection of a transparent sealant of a semiconductor element, with the semiconductor element, which is such that a chip is mounted on a substrate, being also an object to be tested. SOLUTION: The semiconductor element 1 to be inspected is located below a telecentric lens 5 and a CCD camera 6. When inspecting the surface of the sealant for defects, a light beam 3 from a light source 2 is incident into the semiconductor element 1 at an angle of 10 to 30 deg. with respect to the upper surface of the chip, and imaging is conducted. When inspecting the inside of the sealant for defects, the light beam 3 is incident into the semiconductor element 1 at an angle of 0 to 20 deg. with respect to the upper surface of the chip, and imaging is conducted. If there is no defect in the sealant, the light from the semiconductor element 1 is never incident into the lens 5, and if there are any defects in the sealant, scattered light generated by the defects is incident into the lens 5. Consequently, whether there is any defect in the sealant can be judged by looking at whether there is light in the lens 5.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an inspection method and an inspection apparatus for a semiconductor element having a semiconductor chip (hereinafter referred to as a chip) and a transparent encapsulant, and more particularly to the presence or absence of defects in the encapsulant. Method and device for inspecting

[0002]

2. Description of the Related Art As shown in FIG. 7, when an optical sensor (photoelectric sensor) 16 is mounted on the surface of a chip 14, in order to enable the optical sensor to receive an optical signal from the outside,
Chip is a transparent resin encapsulant 1 generally called a mold
It is sealed with 8. Conventionally, such surface defects and internal defects of the mold have been individually visually observed by a dedicated inspector for all the semiconductor elements using a microscope. Specifically, as shown in FIG. 9, a single item positioning jig 24 is set with a single item to be inspected, and a dedicated inspector uses the microscope 23 to inspect the mold surface defect and the mold internal defect at the inspection station 22. Inspected one by one, and if any defect was found, the inspector removed it himself.

If a defect exists on the upper surface of the optical sensor 16 and in the vicinity of the optical sensor 16, it becomes impossible to properly receive an optical signal from the outside, and thus such a defect inspection of the mold is an indispensable inspection.

Defects on the mold surface include scratches on the mold surface and foreign substances attached to the mold surface. On the other hand, the defect inside the mold is a bubble, a foreign substance, or the like inside the mold.

[0005]

The conventional visual inspection of mold defects of semiconductor elements has the following drawbacks.

In the visual inspection, an inspection error such as an oversight occurs.

The inspection standard varies and the quality is not stable.

There is a limit to human ability.

Since the size, shape and location of defects are unstable, visual inspection is very difficult.

The inspection requires a long time.

Mold (sealing body) by such visual inspection
In order to eliminate the defects of the defect inspection, the applicant of the present invention has a patent application 20
00-215808 (filing date: July 17, 2000)
(Japan) proposed an inspection method that enables automation of mold defect inspection. In this method, a semiconductor element is irradiated from the lower side to detect light from the semiconductor element, and a mold defect is determined based on the detection result. However, it has been found that this inspection method cannot be applied to a semiconductor element having a chip mounted on a substrate. This is because the light beam is blocked by the substrate and cannot enter the mold.

Therefore, the present invention provides an inspection method and an inspection apparatus capable of automating the inspection of a transparent mold (sealing body) of a semiconductor element and improving the reliability of the inspection.
An object of the present invention is to provide an inspection method and an inspection apparatus capable of inspecting a semiconductor element having a semiconductor chip mounted on a substrate.

[0013]

In order to achieve the above object, the inspection method of the present invention is an inspection method for a semiconductor element having a semiconductor chip and a transparent encapsulant, and is an object to be inspected. The semiconductor element is installed so that the upper surface of the semiconductor chip faces the light detecting means, and when the sealing body has no defect, the light from the semiconductor element does not enter the light detecting means, and the sealing body When there is a defect, the light from the light source is incident on the semiconductor element obliquely with respect to the upper surface of the semiconductor chip so that the scattered light generated by the defect is incident on the photodetector, It is characterized in that the presence or absence of a defect in the sealing body of the semiconductor element is determined based on the detection result of

In this method, the light beam from the light source is obliquely directed to the upper surface of the semiconductor chip (for example, when the semiconductor element is installed in the horizontal direction, that is, when the upper surface of the semiconductor chip is installed so as to extend in the horizontal direction). Is incident on the semiconductor element that is the object to be inspected (from an obliquely upward direction with respect to the horizontal direction), so even if the chip is mounted on the substrate, the light from the light source is not blocked by the substrate and the semiconductor element is sealed. Can enter the body. When the sealing body is not defective, the light incident on the sealing body of the semiconductor element from the light source advances while repeating the total reflection by the upper surface of the sealing body and the chip surface facing the sealing body, and Go out of the stop. This light does not enter the light detecting means. On the other hand, when there is a defect on the surface or inside of the encapsulant, the light incident on the semiconductor element from the light source is diffusely reflected by this defect, scattered light is emitted from the upper surface of the encapsulant, and is incident on the light detecting means. . That is, depending on whether or not the light detecting means detects the light from the sealing body,
It is possible to determine whether or not the sealing body has a defect. Therefore, by using the inspection method of the present invention, the defect inspection of the sealed body can be automated. Moreover, this inspection method can be applied regardless of whether the chip is mounted or not mounted on the substrate as long as the chip is a semiconductor element sealed with a transparent sealing body.

In order to carry out this inspection method, the inspection apparatus of the present invention comprises a light source, a light detecting means for detecting light emitted from the semiconductor element, which is an object to be inspected, and a light detecting means. And a determination means for determining the presence or absence of a defect in the sealing body of the semiconductor element, based on the detection result by the light source, the light source is configured to detect the light from the semiconductor element when the sealing body has no defect. When the sealing body has a defect, the semiconductor element is irradiated obliquely to the upper surface of the semiconductor chip so that the scattered light generated by the defect is incident on the photodetector. It has become.

When inspecting the surface of the sealing body for the presence or absence of defects, the upper surface of the semiconductor chip (for example,
When the upper surface of the semiconductor chip is in the horizontal direction, it is preferable that the light beam from the light source is incident on the semiconductor element at an angle of 10 ° to 30 ° with respect to the horizontal direction.

The above angle of 10 ° to 30 ° is the angle at which the contrast between the chip surface and the surface defect can be best obtained. If the angle is smaller than 10 °, the light beam from the light source incident on the sealing body is not irregularly reflected by the defect and cannot be detected. On the other hand, if the angle is larger than 30 °, the light beam from the light source will be diffusely reflected on the chip surface. Therefore, in either case, there is no contrast between the chip surface and the defect, and the defect cannot be detected.

When inspecting the presence or absence of an internal defect in the sealing body, 0 ° to 20 ° with respect to the upper surface of the semiconductor chip.
It is preferable that the light beam from the light source is incident on the semiconductor element from a direction forming an angle.

The above-mentioned angle of 0 ° to 20 ° is the angle at which the contrast between the chip surface and the internal defect is best obtained. If the angle is smaller than 0 °, the light is blocked by the substrate and cannot enter the sealing body. Also, the angle is 2
If it is larger than 0 °, the light beam from the light source will be diffusely reflected on the chip surface. Therefore, in either case, there is no contrast between the chip surface and the defect, and the defect cannot be detected.

It should be noted that the upper limit of the angle of incidence of the light beam at the time of inspecting the internal defect of the sealing body is smaller than the upper limit of the angle of incidence of the light beam at the time of inspection of the surface defect of the sealing body. This is because it is necessary to more strictly suppress the degree of diffused reflection on the chip surface.

In order to cause the light beam from the light source to be incident on the semiconductor element at the above-mentioned angle, the inspection device is such that the light beam from the light source forms an angle of 0 ° to 30 ° with respect to the upper surface of the semiconductor chip. The emission direction of the light beam of the light source may be adjustable so that the light beam can be incident on. If it can be adjusted in the range of 0 ° to 30 °, the angle (10 ° to 30 °) used when inspecting the surface defect of the encapsulant is also used when inspecting the internal defect of the encapsulant. Angle (0 to 20
°) is also available.

In one embodiment, in order to ensure high detection accuracy, an LED light source having a wavelength of 600 nm to 670 nm is used as the light source.

In one embodiment, the photo-detecting means in the above-mentioned inspection apparatus is an image pickup means for taking in light coming from the semiconductor element and forming an image of the semiconductor element. In this case, the inspection apparatus further includes image processing means for processing the image obtained by the image pickup means to obtain image data in a predetermined inspection area, and the determination means includes a defect in the image data obtained by the image processing means. The presence or absence of a defect in the sealing body is determined by comparison with the determination standard.

In one embodiment, the image pickup means includes a telecentric lens and a CCD camera. Since the telecentric lens can capture only the light component in a specific direction, it can capture an image by capturing only the scattering destination caused by the defect.

In order to detect a defect with higher accuracy, a light-shielding plate may be provided to block a light beam from the outside so that the light beam from the outside is not detected by the light detecting means.

In order to detect the defect with higher accuracy, a light shielding hood may be provided to prevent the light beam from the light source from entering the upper surface of the sealing body. By providing such a light-shielding hood, it is possible to prevent the disadvantage that the light beam from the light source is diffusely reflected on the surface of the semiconductor chip and the light is detected by the light detecting means. Further, when the light-shielding hood is provided, it is effective for that purpose to set the tip of the light-shielding hood at a distance of 0.5 mm or less from the upper surface of the semiconductor element. The shading hood measures the distance between the tip of the shading hood and the upper surface of the semiconductor element (for example,
If it can be adjusted (in the range of 0 mm to 0.6 mm),
It is convenient.

When the semiconductor element which is the object to be inspected has an optical sensor on a semiconductor chip, the upper surface of the sealing body may be a mirror surface for the light receiving area, and the area other than the light receiving area may be pear ground. If the surface state of the upper surface of the sealing body is set in this way, the light incident on the area other than the light receiving area is hardly detected by the light detecting means because of the pear surface. Therefore,
When a light-shielding hood is used for a semiconductor element having such a surface, the tip portion of the light-shielding hood may cover substantially only the light-receiving region, not the entire upper surface of the sealing body. When the entire upper surface of the sealing body is a mirror surface, the tip portion of the light shielding hood may be dimensioned so as to substantially cover the entire upper surface of the sealing body.

By inspecting the surface defect of the sealing body and inspecting the internal defect of the sealing body, the inspection area and the defect judgment standard in the inspection object are changed to inspect the defect with high accuracy. be able to.

In one embodiment, the inspecting apparatus is configured so that individual semiconductor elements are sequentially sent to the photodetecting means, and the semiconductor elements sent by the supplying means are predetermined to the photodetecting means. Positioning means for positioning at a location are further provided.

In one embodiment, the light source, the light detecting means, and the judging means respectively include a first light source, a first light detecting section, and a first judging section for inspecting the surface defect of the sealing body.
A second light source for inspecting an internal defect of the sealing body, a second light detection unit, and a second determination unit are provided, and the emission direction of the light beam from the first light source is It is adjustable so that it can be incident on the semiconductor element at an angle of 10 ° to 30 ° with respect to the upper surface of the semiconductor chip, and the direction of emission of the light beam from the second light source is It can be adjusted so that it can be incident on the semiconductor element at an angle of 0 ° to 20 ° with respect to the upper surface. Then, the first determination unit and the second determination unit perform defect determination using different defect determination standards. In this embodiment, while the first light source, the first light detection unit, and the first determination unit inspect the surface of the sealing body of the one semiconductor element for defects, the second light source and the second light are detected. The detection unit and the second determination unit inspect a defect inside the sealing body of another semiconductor element. Therefore, the inspection time is shorter than that in the case where the defects on the surface of the sealing body and the inside of the sealing body are inspected by the common light source, the common photodetection unit, and the common determination unit.

[0031]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a mechanism diagram of an embodiment of a semiconductor device inspection apparatus according to the present invention. As shown in this figure, the inspection device includes a light source 2, a light blocking plate 4, a telecentric lens 5, a CCD camera 6, a light blocking hood 13, an image memory 7, an image processing unit 8, an image determining unit 9, and a device driving unit 19. Have.

The light source 2 is arranged so as to surround the semiconductor element 1 which is the object to be inspected and which is installed in the horizontal direction.
The semiconductor element 1 is illuminated by the light ray 3 from the light source 2. The semiconductor element 1 includes, for example, as shown in FIG. 7, a chip 14, a substrate 17, a photoelectric sensor 16 mounted on the surface of the chip 14, and a sealing body (hereinafter, referred to as a mold) 18 made of a transparent resin. . Telecentric lens 5
The CCD camera 6 is installed so as to be located above the semiconductor element 1, and images the semiconductor element 1. The telecentric lens 5 and the CCD camera 6 are image pickup means and light detection means. The image signal from the CCD camera 6 is stored in the image memory 7. Then, the image processing unit 8 uses the image memory 7
The image signal read from is processed to obtain image data in a predetermined inspection area. The image data is sent to the image determination unit 9. The image determination unit 9 compares the image data with the defect determination standard to determine the quality of the semiconductor element, more specifically, the presence or absence of a defect in the mold (sealing body), and outputs a determination result signal 10. The device driving section 19 receives the judgment result signal 10 and drives the device for classifying and accommodating the semiconductor elements 1 according to the judgment result. Note that image processing and image determination can be performed using a known method.

When ambient light enters the semiconductor device 1 to be inspected, the surface of the chip 14 is irregularly reflected by the ambient light from the upper surface of the semiconductor device 1, that is, the upper surface of the mold 18, and as a result, the surface of the chip 14 is affected. There is no contrast between the defect and the defect, making inspection impossible. In order to avoid such a situation, the light shielding plate 4 is provided around the telecentric lens 5 so as to cover the light source 2 and the inspection object 1.

When the light beam 3 is directly incident on the semiconductor element 1 which is the object to be inspected from the upper surface of the semiconductor element 1, that is, the upper surface of the mold 18, the surface of the chip 14 causes irregular reflection, and as a result, the surface of the chip 14 is The contrast with the defect disappears and inspection becomes impossible. In order to avoid such a situation, a light shielding hood 13 is provided around the telecentric lens 5 so as to cover the entire upper surface of the mold 18 in order to block the incidence of the light ray 3 on the upper surface of the mold 18.

The accuracy of defect detection is good when the distance between the tip of the light-shielding hood 13 and the upper surface of the mold 18 is 0.5 mm or less. When the distance exceeds 0.5 mm, the light ray 3 enters from the upper surface of the mold 18, Diffuse reflection occurs on the surface of the chip 14 and the contrast with the defect disappears, and the defect cannot be detected. Further, in order to prevent the surface of the semiconductor element from being damaged, the tip of the light-shielding hood 13 is attached to the mold 1.
It is desirable to be separated from the upper surface of 8 by at least 0.1 mm. To perform a more accurate inspection, the distance between the tip of the light shielding hood 13 and the upper surface of the mold 18 is 0.25 mm to 0.35 m.
It is preferably m. In the present embodiment, the light shielding hood 13 can be adjusted in its vertical position within a range of 0 mm to 0.6 mm so that its tip is located at an appropriate distance from the upper surface of the semiconductor element. However, the adjustment range is not limited to this example.

The amount of opening at the tip of the light shielding hood 13 is
For a semiconductor element having a size of 2.0 to 2.4 mm, the defect detection accuracy is good when φ1.8 to φ3.0 mm, and when the diameter is outside this range, the light beam 3 is emitted from the upper surface of the semiconductor element 1. Upon incidence, diffuse reflection occurs on the surface of the chip 14 and the contrast with the defect disappears, and the defect could not be detected. The optimum opening amount at the tip of the light shielding hood 13 may be appropriately set according to the dimensions of the semiconductor element.

Inclination angle β of the tip portion of the light-shielding hood 13 (angle formed by a line extending horizontally from the tip surface and the inclined portion)
Was 60 ° to 80 ° in the present embodiment. This angle may also be appropriately changed according to the relationship between the diameter of the upper portion of the light-shielding hood (the cylindrical portion attached to the lens 5) and the diameter of the tip portion.

In order to further improve the defect inspection accuracy, only the light receiving region (the region surrounded by the center circle in FIG. 7A) is mirror-finished on the upper surface of the sealing body, and the region other than the light receiving region is pear-free. Is desirable. By setting the upper surface of the sealing body in such a surface state, it becomes possible to block the scattered light generated in the surface area of the sealing body other than the light receiving area so as not to be detected by the light detecting means. For the semiconductor element having such a surface state, the tip portion of the light shielding hood 13 may cover substantially only the light receiving region, not the entire upper surface of the sealing body. 2 and 3 show a case where the tip portion of the light shielding hood 13 substantially covers the entire upper surface of the sealing body.

As the light source 2, an LED light source of single / peak wavelength is used. The reason for this is that in a light source containing a plurality of peak wavelengths, diffuse reflection occurs on the chip surface, the contrast between the chip surface and defects disappears, and inspection becomes impossible. Further, by using the telecentric lens 5, it is possible to capture a light component only in a specific direction, and it is possible to image only the scattered light diffusely reflected by the defect.

The LED light source is 600 nm to 670 nm.
InGaA1P-based yellow LE having a peak wavelength of nm
D and GaA1As based red LEDs are desirable. GaN
A blue LED, a green LED, an InGaA1P yellow LED, and a GaA1As red LED were examined, and InGaA1 having a peak wavelength of 600 nm to 670 nm was examined.
The P-based and GaA1As-based LEDs had particularly good defect detection accuracy.

Further, in this embodiment, since the light source 2 is commonly used for both the mold surface defect inspection and the mold internal defect inspection, the light source 2 forms an angle of 0 ° to 30 ° with respect to the horizontal direction. The outgoing direction of the light beam is adjustable so that the light beam 3 can enter the semiconductor element 1. However, at the time of inspecting the mold surface defect, as shown in FIG. 2, the emission direction is adjusted so that the light beam 3 can enter the semiconductor element 1 at an angle θ of 10 ° to 30 ° with respect to the horizontal direction. At the time of inspecting the defect inside the mold, as shown in FIG. 3, the emitting direction is adjusted so that the light ray 3 can enter the semiconductor element 1 at an angle θ of 0 ° to 20 ° with respect to the horizontal direction. 2 and 3, 11 represents a defect on the mold surface, and 12 represents a defect inside the mold. Reference numeral 15 represents scattered light generated by these defects.

FIG. 5 is a comparison diagram of light source (optical axis) arrangement angles when inspecting a mold surface defect. As shown in this figure, in the mold surface defect inspection, as the arrangement angle of the light source 2 with respect to the semiconductor element 1 (that is, the emission direction of the light beam 3 with respect to the semiconductor element 1), the upper side angle θ = 10 ° with respect to the horizontal direction.
-30 ° is the angle at which the contrast between the chip surface and the defect is most obtained, and if the light beam 3 is incident on the semiconductor element 1 at an angle within this range, as shown in (b), the incident light from the light source 2 3 is irregularly reflected by a defect and appears as scattered light 15 on the upper surface of the semiconductor element 1, that is, the upper surface of the mold 18, and this light 15 can be satisfactorily detected. At this angle,
When the mold 18 has no defects, the incident light 3 advances while being totally reflected between the upper surface of the mold and the surface of the chip 14 as shown in FIG. Not taken into the lens 5. on the other hand,
As shown in (c), when the angle θ is smaller than 10 °, the incident light 3 from the light source 2 is not irregularly reflected by a defect and cannot be detected.
Further, as shown in (d), when the angle θ is larger than 30 °, the light ray 3 is diffusely reflected on the surface of the chip 14, and in this case also, the contrast with the defect is lost and the defect cannot be detected.

FIG. 6 is a comparison diagram of light source (optical axis) arrangement angles when inspecting defects inside the mold. As shown in this figure, in the defect inspection inside the mold, as the arrangement angle of the light source 2 with respect to the semiconductor element 1 (that is, the emission direction of the light ray 3 with respect to the semiconductor element 1), the upper side angle θ = 0 ° to the horizontal direction.
20 ° is the angle at which the contrast between the chip surface and the defect is most obtained, and if the light beam 3 is incident on the semiconductor element 1 at an angle within this range, as shown in (b), the incident light 3 from the light source 2 Is diffusely reflected by defects and appears as scattered light 15 on the upper surface of the semiconductor element 1, that is, the upper surface of the mold 18, and this light 15 can be satisfactorily detected. At this angle, when the mold 18 has no defect, the incident light 3 advances while being totally reflected between the upper surface of the mold 18 and the surface of the chip 14 as shown in FIG. The light emitted at is not taken into the telecentric lens 5. On the other hand, as shown in (c), when the angle θ is smaller than 0 °,
The light ray 3 is blocked by the substrate and cannot enter the mold 18. Further, as shown in (d), the angle θ is 20
If the angle is larger than 0 °, the light beam 3 is irregularly reflected on the surface of the chip 14, and in any case, the contrast with the defect is lost and the defect cannot be detected.

FIG. 4 shows the semiconductor element 1 (FIG. 7) obtained by the mold surface defect inspection and the mold internal defect inspection, respectively.
(See reference image). 11 is a surface defect and 12 is an internal defect.

The image processing unit 8 reads out an image from the image memory 7 and performs image processing to extract image data of inspection areas set in accordance with the mold surface defect inspection and the mold internal defect inspection, respectively. Then, the image determination unit 9 compares the image data with an inspection determination standard corresponding to the inspection to determine the presence or absence of a defect, and outputs the result as a determination result signal 10. The output result signal 10 is transmitted to the device driving unit 19.

The inspection apparatus shown in FIG. 1 is designed to perform the mold surface defect inspection and the mold internal defect inspection in one inspection station (see 22 in FIG. 9). The inspected product may be set in a conventionally used single product positioning jig (see 24 in FIG. 9). By moving this single-item positioning jig toward the inspection station by a predetermined amount by a known feeding mechanism, it is possible to feed the inspected products one by one to a predetermined position of the inspection station.

FIG. 8 is a block diagram of an inspection apparatus according to another embodiment of the present invention. While the inspection apparatus shown in FIG. 1 performs the mold surface defect inspection and the mold internal defect inspection in one inspection station, the inspection apparatus of FIG. 8 separately performs the mold surface defect inspection and the mold internal defect inspection. This is done at the inspection station.
Therefore, as shown in the block diagram of FIG. 8, this inspection apparatus includes a mold surface defect inspection unit 20 and a mold internal defect inspection unit 21 separately, and an image determination unit 9 for each. Mold surface defect inspection unit 2
0 and the internal mold defect inspection unit 21 have the same configurations as the constituent members 2, 4, 5, 6, 7, 8, and 13 shown in FIG. The inspection apparatus further includes a supply unit 26 for sending a positioning jig on which an inspected product is set to an inspection station, a sorting storage unit 25 for inspected products, and a device driving unit 19.

In this inspection apparatus, the mold surface inspection and the mold internal inspection are simultaneously performed at two inspection stations, and the mold surface inspection / judgment performed by the image determination units 9 and 9 is performed.
Two inspection results of the mold internal inspection are stored in the device drive unit 19, and based on the results, the classification storage unit 25 automatically classifies and stores good products and defective products. The mold surface inspection and the mold internal inspection are performed on different inspection objects at the same time to reduce the processing time of the inspection device.

In the above description of the embodiment, the semiconductor element having the chip mounted on the semiconductor substrate is the object of inspection, but the semiconductor element and the lead in the state where the chip is mounted on the lead frame are separated from the frame. It will be easily understood by those skilled in the art that a semiconductor element in a single product state can naturally be a target of the inspection method / inspection device of the present invention. Further, in the above-described embodiment, the case where the inspection object is installed in the horizontal direction has been taken up as the easiest mode to implement. However, the present invention does not include the case where the semiconductor element of the inspection object is installed in the horizontal direction (for example, a semiconductor device). It is also applicable when the device is installed in the vertical direction). The point is that the light beam from the light source may be incident on the semiconductor element from an oblique direction with respect to the upper surface of the chip (that is, from an oblique direction opposite to the substrate).

[0050]

As described above, by using the inspection method and the inspection apparatus of the present invention, the appearance inspection of the semiconductor element sealed with the transparent resin can be performed accurately regardless of whether the semiconductor chip is mounted on the substrate. It can be carried out. Further, there is an effect that the reliability can be improved and the inspection can be automated.

[Brief description of drawings]

FIG. 1 is a mechanism diagram of an embodiment of a semiconductor device inspection apparatus according to the present invention.

FIG. 2 is a diagram illustrating a method of inspecting a mold surface for defects according to the present invention.

FIG. 3 is a diagram illustrating a method for inspecting defects inside the mold of the present invention.

FIG. 4 is a diagram showing an example of images respectively obtained when a light source for inspecting a mold surface defect and a light source for inspecting a mold internal defect of the inspection apparatus of FIG. 1 are turned on.

FIG. 5 is a comparison view of arrangement angles of light sources (optical axes) for inspecting mold surface defects.

FIG. 6 is a comparison view of arrangement angles of light sources (optical axes) for inspecting defects inside a mold.

7 (a) and 7 (b) are respectively a plan view and a front view showing an example of a semiconductor element which is an object to be inspected, and FIG. 7 (a) shows an example of a photoelectric sensor mounted on a chip surface. .

FIG. 8 is a mechanical view of another embodiment of the inspection device of the present invention.

FIG. 9 is a diagram showing an example of a conventional visual inspection method.

[Explanation of symbols]

1. Semiconductor element 2. light source 3. Ray of light 4. Light shield 5. Telecentric lens 6. CCD camera 7. Image memory 8. Image processing unit 9. Image determination unit 10. Judgment result signal 11. Surface defects 12. Internal defect 13. Blackout hood 14. Tip 15. Scattered light 16. Photoelectric sensor 17. substrate 18. Transparent encapsulant 19. Device drive 20. Mold surface defect inspection department 21. Mold internal defect inspection section 22. Inspection station 23. microscope 24. Single item positioning jig 25. Classification storage 26. Supply department

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Claims (18)

[Claims] 1. A method for inspecting a semiconductor element having a semiconductor chip and a transparent encapsulant, the semiconductor element being an object to be inspected, the upper surface of the semiconductor chip facing a light detecting means. If the sealing body is installed and there is no defect in the sealing body, the light from the semiconductor element does not enter the photodetection means, and if the sealing body has a defect, the scattered light generated by the defect causes the light detection to occur. The light from the light source is incident on the semiconductor element from an oblique direction with respect to the upper surface of the semiconductor chip so as to be incident on the means, and whether or not there is a defect in the sealing body of the semiconductor element based on the detection result by the light detecting means. A method for inspecting a semiconductor device, which comprises: 2. The inspection method according to claim 1, wherein when inspecting the presence or absence of a surface defect in the encapsulant, the semiconductor element is irradiated from a light source at an angle of 10 ° to 30 ° with respect to an upper surface of the semiconductor chip. The inspection method, characterized in that the light beam of 3. The inspection method according to claim 1 or 2, wherein when inspecting for the presence or absence of an internal defect in the sealing body, the semiconductor element is formed at an angle of 0 ° to 20 ° with respect to an upper surface of the semiconductor chip. An inspection method, characterized in that a light beam from a light source is incident. 4. The inspection method according to any one of claims 1 to 3, wherein an LED light source having a wavelength of 600 nm to 670 nm is used as the light source. 5. The inspection method according to any one of claims 1 to 4, wherein the inspection of the surface of the sealing body is performed and the inspection of the internal defect of the sealing body is performed. An inspection method characterized by changing a region and a defect determination standard. 6. The inspection method according to any one of claims 1 to 5, wherein when the semiconductor element that is the object to be inspected has an optical sensor on a semiconductor chip, the upper surface of the sealing body and the light receiving area are mirror surfaces. And an area other than the light-receiving area is pear ground. 7. An inspection apparatus for a semiconductor element having a semiconductor chip and a transparent encapsulant, comprising: a light source; and light detection for detecting light from the semiconductor element, which is the object to be inspected, irradiated by the light source. Means, based on the detection result by the light detection means, a determination means for determining the presence or absence of a defect of the sealing body of the semiconductor element, the light source, from the semiconductor element when the sealing body is not defective Light does not enter the light detecting means, and when the sealing body has a defect, scattered light generated by the defect enters the light detecting means in an oblique direction with respect to the upper surface of the semiconductor chip. The semiconductor device inspection apparatus is characterized in that the semiconductor device is irradiated with light. 8. The inspection apparatus according to claim 7, wherein the light beam from the light source can be incident on the semiconductor element at an angle of 0 ° to 30 ° with respect to the upper surface of the semiconductor chip.
An inspection method characterized in that an emission direction of a light beam of a light source can be adjusted. 9. The inspection apparatus according to claim 7 or 8, wherein the light detection means comprises an image pickup means for taking in light coming from the semiconductor element to form an image of the semiconductor element, and processing the image obtained by the image pickup means. And further comprising image processing means for obtaining image data within a predetermined inspection area, wherein the determining means compares the image data obtained by the image processing means with a defect determination standard to determine the presence or absence of a defect in the sealing body. An inspection device characterized by: 10. The inspection apparatus according to claim 9, wherein the imaging means includes a telecentric lens and a CCD camera. 11. The inspection device according to claim 7, wherein the light source is an LED light source. 12. The inspection apparatus according to claim 11, wherein the wavelength range of the LED light source is 600 to 670 nm. 13. The inspection apparatus according to any one of claims 7 to 12, wherein the supply means for sequentially sending the individual semiconductor elements to the photodetection means, and the semiconductor element sent by the supply means for the light An inspection apparatus further comprising: positioning means for positioning the detection means at a predetermined position. 14. The inspection apparatus according to claim 7, further comprising a light-shielding plate that blocks an external light ray so that the external light ray is not detected by the light detecting means. Inspection device. 15. The inspection apparatus according to claim 7, further comprising a light-shielding hood for preventing light rays from the light source from entering the upper surface of the sealing body. Inspection device. 16. The inspection apparatus according to claim 15, wherein the light shielding hood is arranged such that the tip of the light shielding hood is at a distance of 0.5 mm or less from the upper surface of the semiconductor element. 17. The inspection device according to claim 15, wherein the distance between the tip of the light shielding hood and the upper surface of the semiconductor element is adjustable in the light shielding hood. 18. The inspection device according to claim 7, wherein the light source, the light detection unit, and the determination unit respectively include a first light source and a first light source for inspecting a surface defect of the sealing body. The light source includes a light detection unit, a first determination unit, a second light source for inspecting an internal defect of the sealed body, a second light detection unit, and a second determination unit. The emission direction of the light beam from the second light source can be adjusted so that the light beam can enter the semiconductor element at an angle of 10 ° to 30 ° with respect to the upper surface of the semiconductor chip. Can be adjusted so that this light ray can be incident on the semiconductor element at an angle of 0 ° to 20 ° with respect to the upper surface of the semiconductor chip, and the first determination unit and the second determination unit use different defect determination criteria. An inspection apparatus for determining a defect of a sealing body.