JP2003007581A - Developing method and developer - Google Patents

Abstract

PROBLEM TO BE SOLVED: To enhance in-plane uniformity even if the processing time of developing liquid is different from place to place. SOLUTION: The developer comprises a developing nozzle 2 moving while dripping developing liquid onto a substrate 1, and a means for providing a difference of flow rate such that the flow rate of the developing liquid dripping from the developing nozzle 2 onto the surface of the substrate 1 at the end of dripping is higher than that at the start of dripping. Consequently, the in- plane uniformity of line width in the substrate 1 is enhanced. Since a function for increasing the flow rate of developing liquid being ejected from the developing nozzle 2 in proportion to the ejection time is provided, inclination in the variation of line width can be suppressed in the advancing direction of the developing nozzle 2 even if a stationary phenomenon in the developing nozzle 2, where a difference of developing time is present between the starting point of development and the point where the developing liquid is placed lastly, is employed by increasing the flow rate at the point where the developing liquid is placed lastly thereby increasing the reaction rate.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to the field of semiconductors, and more particularly to a developing method and a developing device for photolithography.

[0002]

2. Description of the Related Art In the semiconductor industry, photolithography technology (hereinafter referred to as photolithography) is used for microfabrication, and the same product can be produced inexpensively in large quantities. In recent years, active matrix liquid crystal display devices using thin film transistors have been commercialized using the same technology. Both the semiconductor industry and the liquid crystal industry are striving day and night to increase the substrate size in terms of cost productivity and to produce high quality products using easy materials. Conventionally, the development method of the photolithography technique on a large-sized substrate has adopted static development in a slit nozzle. FIG. 3 shows a schematic diagram of the conventional method.

Reference numeral 11 denotes a substrate, which is made of glass having a size of 550 × 650 mm. 3% resist on the main surface
A film thickness of 2 μm is applied within the film thickness variation. 12
Is a developing nozzle having a nozzle width of 2 mm and a length of 550 mm.
Flow MAH developer. A substrate chuck 13 is made of alumite-treated Al and has a groove on the surface on which the substrate is placed, and has a function of fixing the substrate by vacuum suction. First, the substrate 11 is attracted to the substrate chuck 13, the short sides are aligned with the length direction of the developing nozzle 12, and the developing nozzle 12 advances in the long side direction. When the developing nozzle 12 moves on the substrate 11 while dropping the developing solution, the gap between the developing nozzle 12 and the substrate 11 is set to 2 ± 0.2 mm.

At this time, the line width of the resist pattern depending on the developing direction is as shown by the broken line in FIG . The abscissa of FIG. 2 shows positions at equal intervals in the long side direction of the substrate, and the developing nozzle 12 was started from the position A. The vertical axis of FIG. 2 shows the line width variation when a mask 5.5 μm pattern is formed by an exposure machine. The horizontal axis is the measurement points A to F in the long side direction of the substrate. The broken line in FIG. 2 has an inclination of 0.6 μm / m, and a glass substrate of 550 × 650 mm has a difference between the maximum and the minimum of 0.35 μm. Current XG
With the number of pixels of A level (1 million pixels), there is no problem in the image quality even if the inclination due to the developing nozzle 12 and the line width variation of the existing exposure technology that originally exists are accumulated, but in the future, UXGA and Provided is one that suppresses the line width variation of an array substrate that requires a larger number of pixels.

[0005]

The above-mentioned conventional method is
Basically, the static development in the slit nozzle is adopted, and the inclination is 0.6 μm / m, and the difference between the maximum and the minimum of the inclination is 0.35 μm in the glass substrate of 550 × 650 mm.
have. The line width variation of the current exposure technology is 3σ
<0.48 μm. These variations are 0.6μ
Although it has an in-plane uniformity of m, if the current number of pixels of the XGA level (1 million pixels) (which also affects the display driving method), the in-plane uniformity is 0.75 μm or less. Since it is known that there is no problem in quality, it is not a problem. However, in the future, an array substrate that requires UXGA or more pixels will be required. At that time
The demand for further microfabrication has increased, and 3σ <for a substrate size of 550 x 750 mm due to variations in in-plane uniformity.
It should be 0.5 μm.

Therefore, for a substrate size of 550 × 750 mm, 3σ <0.6 μm is set to 3σ <0.5 μm or less, which largely depends on the developing system of the developing device.
The substrate size is 550 x 750 using the static development method.
Even if the width becomes more than 10 mm, the inclination of the development is set to 0.1 μm / m, and the variation of the entire substrate can be controlled to 3σ <0.5 μm even if the original line width variation of the existing exposure technology is included.

Therefore, an object of the present invention is to provide a developing method and a developing apparatus which improve the in-plane uniformity even when the processing time of the developing solution varies depending on the place.

[0008]

In order to achieve the above-mentioned object, the developing method according to claim 1 of the present invention is such that the developing solution is dropped onto the substrate and the jetting position of the developing solution is moved to move the surface of the substrate. A flow rate difference is provided so that when the developer is dropped on the entire surface, the flow rate at which the dropping is completed is larger than the flow rate at which the developing solution starts to be dropped on the surface of the substrate.

As described above, when the developing solution is dripped on the entire surface of the substrate, the flow rate difference is provided so that the flow rate at which the developing solution is dripped on the surface of the substrate is larger than the flow rate at which the developing solution is finished.
The in-plane uniformity of the line width within the substrate is improved. That is, even if the static development is adopted, which has a function of increasing the flow rate of the injected developing solution in proportion to the ejection time, there is a difference in the developing time between the place where the developing is started and the place where the developing solution is finally filled, By increasing the flow rate at the place where the developing solution is poured last to increase the reaction speed, it is possible to suppress the inclination of the line width change in the advancing direction of the spray position of the developing solution.

According to a second aspect of the present invention, in the developing method according to the first aspect, the flow rate of the developer between the dropping and the finishing of the dropping is changed with respect to the time from the beginning of the dropping to the end of the dropping. Is calculated using the value obtained by multiplying the flow rate difference by the time ratio. In this way, the flow rate of the developing solution between dropping and ending dropping is calculated using a value obtained by multiplying the flow rate difference by the ratio of the time from the beginning of dropping to the time until the end of dropping. Therefore, the flow rate of the developing solution increases in proportion to the dropping time.

According to a third aspect of the present invention, the developing solution is dropped onto the substrate while the spraying position of the developing solution is moved to drop the developing solution onto the entire surface of the substrate. A difference is provided so that the developer concentration at the end of dropping is higher than the liquid concentration.

In this way, when the developing solution is dropped on the entire surface of the substrate, a difference is provided so that the developing solution concentration at the end of dropping is higher than the developing solution concentration at the beginning of dropping. The in-plane uniformity of the line width is improved. That is,
By having the function of increasing the concentration of the sprayed developer in proportion to the jetting time, even if static development is adopted in which there is a difference in the development time between the place where development is started and the place where the developer is put up at the end,
By increasing the concentration of the developing solution at the final place and increasing the reaction speed, it is possible to suppress the inclination of the line width change in the advancing direction of the spray position of the developing solution.

According to a fourth aspect of the present invention, in the developing method according to the third aspect, a pressure difference is provided between the pressure of the developing solution which begins to drop on the surface of the substrate and the pressure of the developing solution which finishes dropping. , Change the developer concentration. in this way,
By providing a pressure difference between the pressure of the developing solution which begins to drop on the surface of the substrate and the pressure of the developing solution which finishes dropping, the concentration of the developing solution can be varied, so that the reaction rate can be controlled.

According to a fifth aspect of the present invention, in a developing device, a developing nozzle that moves while dropping a developing solution onto a substrate, and a flow rate such that a flow rate at which the developing solution finishes dropping is higher than a flow rate at which the developing nozzle starts dropping onto the surface of the substrate. It has a means to make a difference.

As described above, there is provided a developing nozzle which moves while dropping the developing solution on the substrate, and a means for providing a flow rate difference so that the flow rate at which the developing solution finishes dropping is larger than the flow rate at which the developing nozzle starts dropping on the surface of the substrate. Therefore, the in-plane uniformity of the line width in the substrate is improved. That is, by having a function of increasing the flow rate of the developing solution jetted from the developing nozzle in proportion to the jetting time, there is a difference in the developing time between the place where the developing is started and the place where the developing solution is finally put up. Even if is adopted, the inclination of the line width change in the advancing direction of the developing nozzle can be suppressed by increasing the flow rate at the place where the developing solution is finally poured to increase the reaction speed.

According to a sixth aspect of the present invention, in the developing apparatus according to the fifth aspect, the flow rate of starting the dropping of the developing solution onto the substrate is set to 10 to 15 l / min, and the flow rate of the dropping is finished. A flow rate difference of 1 to 5 l / min is provided from the starting flow rate, and the flow rate of the developer between the dropping and the finishing is defined as the ratio of the time from the beginning of dropping to the time of finishing the dropping from the beginning of dropping. A flow rate changing means for calculating using a value multiplied by In this way, the flow rate of starting the dropping of the developing solution on the substrate is set to 10 to 15 l / min, and a flow rate difference of 1 to 5 l / min is provided from the flow rate of starting the dropping of the developing solution. It is possible to suppress the slope of the change in line width in the traveling direction of 0.1 μm / m or less. Also, the flow rate change calculated from the flow rate of the developer between the time of dropping and the time of dropping is calculated by using the value obtained by multiplying the flow rate difference by the ratio of the time from the start of dropping to the time of finishing dropping. Since the means is provided in the pipe under the developing droplet, the flow rate of the developing solution increases in proportion to the dropping time.

According to a seventh aspect of the present invention, there is provided a developing device in which a developing solution is moved while dropping a developing solution on a substrate, and a developing solution is finished when the developing solution is dropped to a surface of a substrate by the developing nozzle. It has a means for providing a difference so as to increase the liquid concentration. In this way, there is a difference between the developing nozzle that moves while dropping the developing solution on the substrate and the developing solution concentration at the end of dropping that is larger than the developing solution concentration when the developing nozzle starts dropping on the surface of the substrate. Since the means for providing is provided, the in-plane uniformity of the line width in the substrate is improved. That is, by having a function of increasing the concentration of the developing solution jetted from the developing nozzle in proportion to the jetting time, there is a difference in the developing time between the place where the developing is started and the place where the developing solution is finally put up. Even if is adopted, by increasing the concentration of the place where the developer is poured at the end to increase the reaction speed,
It is possible to suppress the inclination of the line width change in the traveling direction of the developing nozzle.

The developing device according to an eighth aspect is the developing device according to the seventh aspect, wherein a pressure difference is provided between the pressure of the developing solution which begins to drop on the surface of the substrate and the pressure of the developing solution which finishes dropping. A means for changing the developer concentration from 2.0% to 2.5% within the range of 10 to 60 seconds is provided in the pipe under the developing droplet. In this way, by providing a pressure difference between the pressure of the developing solution which begins to be dropped on the surface of the substrate and the pressure of the developing solution which is finished to be dropped, the developing solution concentration of 10% to 2.5% is obtained. Since the developing liquid drop lower pipe has a variable means within the range of 60 sec, the inclination of the change in the line width in the advancing direction of the developing nozzle can be suppressed to 0.1 μm / m or less.

[0019]

BEST MODE FOR CARRYING OUT THE INVENTION A first embodiment of the present invention will be described with reference to FIGS. FIG. 1 is a schematic diagram of a developing device according to an embodiment of the present invention.

Reference numeral 1 is a substrate, and glass of 550 × 650 mm size is used. A resist having a film thickness of 2 μm is applied to the main surface with a film thickness variation of 3% or less. 2 is a developing nozzle in a developing device for a large-area substrate, which has a length of 550 m.
It has a nozzle width of 2 mm and a structure of 2 mm.
% TMAH developer is variably flown up to a flow rate of 10 to 15 l / min. Also, the developing nozzle 2 has 2.38% TMAH.
The pipe has a chemical pump that can change the developing solution proportionally with time to 10 to 12 l / min. 3 is a substrate chuck, which has been subjected to alumite treatment A
There is a groove on the surface on which the substrate is placed, which has a function of fixing the substrate by vacuum suction.

The developing nozzle 2 moves while dropping the developing solution on the substrate 1. The developing nozzle 2 also has a means for providing a flow rate difference so that the flow rate at which the dropping is completed is larger than the flow rate at which the dropping is started on the surface of the substrate 1. By this means, the flow rate at which the developing solution starts to be dropped on the substrate is 10 to 15 l /
A flow rate difference of 1 to 5 l / min is set from the flow rate at which the dropping is completed and the flow rate at which the dropping is finished is made to be min. Also, the flow rate change calculated from the flow rate of the developer between the time of dropping and the time of dropping is calculated by using the value obtained by multiplying the flow rate difference by the ratio of the time from the start of dropping to the time of finishing dropping. Means are provided in the pipe under the developing liquid drop.

Next, the developing method will be described. First, the substrate 1 is adsorbed to the substrate chuck 3, the short sides are aligned with the length direction of the developing nozzle 12, and the developing nozzle 2 advances to A to F in the long side direction. When the developing nozzle 12 moves on the substrate 1 while dropping the developing solution, the gap between the developing nozzle 2 and the substrate 1 is set to 2 ± 0.2 mm. When moving the developing nozzle 2 in the long side direction, first, while spraying the developing solution at 10 l / min, the developing nozzle 2 is applied to the main surface of the substrate 1 and moved in the long side direction at a speed of 60 mm per minute. At that time, the flow rate of the developer is 1
The pressing pressure of the developing pump is changed so as to change to 12 l / min after a minute. Reference numeral 4 indicates the flow of the developing solution (start), and 5 indicates the flow of the developing solution (end).

Here, the reaction speed between the developing solution and the resist is expressed by the following Arrhenius equation.

F (t) = K · exp (−kT) · [resist concentration] · [TMAH concentration] where T is a temperature parameter and TMA of the developing solution.
Although it is shown that it is determined by the H concentration and the resist concentration, the flow rate of the developing solution can be mentioned as a function at the developing solution concentration. When the flow rate is increased, it means that the amount of the unit time in which the developing solution hits the resist surface of the main surface of the substrate is increased, so that the reaction rate is increased when the flow rate is increased.

Among the developing methods, the disadvantage of static development using a slit nozzle is that there is a difference in the development time between the place where development is started and the place where the developing solution is filled last. In order to overcome this drawback, the flow rate was changed from 10 l / min to 12 l / min at the last place of the developing solution to increase the reaction rate. This covered the difference in development time.

As described above, by having the function of increasing the flow rate of the developing solution jetted from the developing nozzle 12 in proportion to the jetting time, the developing nozzle 12 progresses as shown by the solid line (Example 1) in FIG. It has an inclination of less than 0.1 μm / m with respect to the direction.

With this function, even if the static development in the developing nozzle 12 is adopted, the inclination of the change in the line width in the traveling direction of the developing nozzle 12 can be suppressed to 0.1 μm / m or less, and the substrate size is 550 × 750 mm or more. Even if it becomes 3
It can be controlled to σ <0.5 μm. By using the present invention in a photolithography process of a TFT array of a liquid crystal display, it is possible to prevent display unevenness even when a high-quality display screen of UXGA or higher is manufactured.

A second embodiment of the present invention will be described.

This developing device has a developing nozzle which moves while dropping the developing solution on the substrate, and a developing solution concentration when the dropping is finished is larger than a developing solution concentration when the developing nozzle starts dropping on the surface of the substrate. A means for providing a difference is provided. Further, by providing a pressure difference between the pressure of the developing solution which starts dropping on the surface of the substrate and the pressure of the developing solution which finishes dropping, the concentration of the developing solution is adjusted from 2.0% to 2.5%.
The developing liquid drop lower pipe has means capable of varying within a range of -60 sec.

The schematic diagram of the developing device of the second embodiment is almost the same as that of the first embodiment shown in FIG. The difference is that 2 is a developing nozzle having a nozzle width of 2 mm and a length of 550 mm, from which a TMAH developing solution at a flow rate of 10 l / min is flowed. In addition, TM is installed in the pipe of the developing nozzle 2.
AH developer at a concentration of 2.38% to 2.5 over time
It is connected to a device with a compounding cell that can be varied up to 0%.

In the second embodiment, there is a difference in the developing time between the place where the development is started and the place where the developing solution is finally filled, which is a drawback of the static development using the slit nozzle.
Instead of changing the flow rate from 10 l / min to 12 l / min, the developer concentration is changed from 2.38% to 2.50%.
It is to overcome by changing to. this is,
By controlling the reaction rate of the Arrhenius equation by directly changing the developer concentration of the parameter,
The line width change due to the development time difference is reduced.

As described above, by having the function of increasing the concentration of the developing solution jetted from the developing nozzle 12 in proportion to the jetting time, the developing nozzle 12 as shown by the solid line in FIG.
The inclination should be less than 0.1 μm / m with respect to the traveling direction of.

With this function, even if the static development in the developing nozzle 12 is adopted, the inclination of the change in the line width in the traveling direction of the developing nozzle 12 can be suppressed to 0.1 μm / m or less, which is the same as in the first embodiment. The effect is obtained.

Although the flow rate of the developing solution is changed from 10 l / min to 12 l / min in the first embodiment, the developing solution flow rate is 10 l / min to 1 at the start of dropping.
Within the range of 5 l / min, at the start of dropping and at 1
Similar effects can be obtained with a difference of up to 5 l / min. In the second embodiment, the developer concentration is set to 2.38 to
Although it is changed to 2.50%, the same effect can be obtained by changing the range of the developer concentration within the range of 2.00% to 2.50% from the start to the end.

In this embodiment, the substrate size is 5
The size is 550x, although it is explained as 50x650mm.
Even if a glass substrate having a size of 650 mm or more is obtained, the same effect can be obtained as long as it is a step of using a developing solution.

[0036]

According to the developing method of the first aspect of the present invention, when the developing solution is dropped onto the entire surface of the substrate, the flow rate at which the dropping is finished is made larger than the flow rate at which the developing solution is started to be dropped on the surface of the substrate. Since the flow rate difference is provided, the in-plane uniformity of the line width in the substrate is improved. That is, by having a function of increasing the flow rate of the developing solution in proportion to the ejection time,
Even if static development is used in which there is a difference in the development time between the place where development is started and the place where the developer is placed last, by increasing the flow rate at the place where the developer is placed last and increasing the reaction speed, It is possible to suppress the inclination of the line width change in the advancing direction of the injection position.

According to a second aspect of the present invention, the flow rate of the developing solution between dropping and ending dropping is a value obtained by multiplying the flow rate difference by the ratio of the time from the beginning of dropping to the end of dropping. Since it is calculated using the above, the flow rate of the developing solution increases in proportion to the dropping time.

According to the developing method of the third aspect of the present invention, when the developing solution is dropped on the entire surface of the substrate, the developing solution concentration at the end of dropping is higher than the developing solution concentration at the beginning of dropping. Since such a difference is provided, the in-plane uniformity of the line width within the substrate is improved. That is, even if static development is adopted, which has a function of increasing the concentration of the ejected developer in proportion to the ejection time, there is a difference in the development time between the place where the development is started and the place where the developer is finally filled, By increasing the concentration of the developing solution at the final place and increasing the reaction speed, it is possible to suppress the inclination of the line width change in the advancing direction of the spray position of the developing solution.

According to the present invention, the concentration of the developing solution can be varied by providing a pressure difference between the pressure of the developing solution which begins to drop on the surface of the substrate and the pressure of the developing solution which finishes dropping, so that the reaction rate is controlled. can do.

According to the developing device of the fifth aspect of the present invention, the developing nozzle that moves while dropping the developing solution on the substrate and the flow rate at which the developing solution finishes dropping are larger than the flow rate at which the developing nozzle starts dropping on the surface of the substrate. As described above, since the means for providing the flow rate difference is provided, the in-plane uniformity of the line width in the substrate is improved. That is, by having a function of increasing the flow rate of the developing solution ejected from the developing nozzle in proportion to the ejection time,
Even if static development is used in the developing nozzle where there is a difference in the development time between the place where development is started and the place where the developing solution is put up at the end, by increasing the flow rate at the place where the developing solution is put up at the end and increasing the reaction speed, It is possible to suppress the inclination of the line width change in the traveling direction of the developing nozzle.

According to a sixth aspect of the present invention, the flow rate of starting the dropping of the developing solution on the substrate is set to 10 to 15 l / min, and the flow rate of ending the dropping is set to be 1 to 5 l / min from the flow rate of starting the dropping. Thus, the inclination of the change in the line width in the advancing direction of the developing nozzle can be suppressed to 0.1 μm / m or less.
In addition, the flow rate of the developer between the end of dropping and
Since there is a flow rate changing means in the developing liquid drop lower pipe that calculates using a value obtained by multiplying the flow rate difference by the ratio of the time from the start of dropping to the time from the start of dropping to the end of dropping, the flow rate of the developing solution is the dropping time. Increases in proportion to.

According to the developing device of the seventh aspect of the present invention, the developing solution is dripped onto the substrate while the developing nozzle is moved and the concentration of the developing solution at the time when the developing nozzle starts to drip onto the surface of the substrate. Since the means for providing the difference is provided so as to increase the developer concentration at the end, the in-plane uniformity of the line width in the substrate is improved. That is, by having a function of increasing the concentration of the developing solution jetted from the developing nozzle in proportion to the jetting time, there is a difference in the developing time between the place where the developing is started and the place where the developing solution is finally put up. Even if is adopted, the inclination of the line width change in the advancing direction of the developing nozzle can be suppressed by increasing the concentration at the place where the developing solution is poured last and increasing the reaction speed.

According to the eighth aspect of the present invention, by providing a pressure difference between the pressure of the developing solution which starts dropping on the surface of the substrate and the pressure of the developing solution which finishes dropping, the developing solution concentration is 2.0% to 2.5%.
%, The means for changing the value within the range of 10 to 60 seconds is provided in the pipe under the developing droplet, so that the inclination of the line width change in the developing nozzle advancing direction can be suppressed to 0.1 μm / m or less.

[Brief description of drawings]

FIG. 1 is a schematic diagram of a developing device according to an embodiment of the present invention.

FIG. 2 is a graph showing the relationship between the position along the long side of the substrate and the change in line width.

FIG. 3 is a schematic view of a conventional developing device.

[Explanation of symbols]

1 substrate 2 developing nozzle 3 substrate chuck 4, 5 flow rate 11 board 12 Development nozzle 13 PCB check AF measurement position plotted

Claims (8)

[Claims] 1. When a developing solution is dropped onto a substrate while moving a spraying position of the developing solution, and when the developing solution is dropped onto the entire surface of the substrate, the dropping is finished from a flow rate at which the developing solution starts to be dropped onto the surface of the substrate. A developing method, wherein a flow rate difference is provided so that the flow rate becomes large. 2. The flow rate of the developing solution between dropping and ending dropping is calculated using a value obtained by multiplying the flow rate difference by the ratio of the time from the beginning of dropping to the time of finishing dropping. The developing method according to claim 1. 3. When dropping the developing solution onto the substrate while moving the spraying position of the developing solution and dropping the developing solution onto the entire surface of the substrate, when the dropping is completed from the concentration of the developing solution at the beginning of dropping. The developing method characterized in that a difference is provided so that the developer concentration of (1) becomes large. 4. The developing method according to claim 3, wherein the concentration of the developing solution is varied by providing a pressure difference between the pressure of the developing solution starting to drop on the surface of the substrate and the pressure of the developing solution ending to drop. 5. A developing nozzle which moves while dropping a developing solution on a substrate, and a means for providing a flow rate difference so that a flow rate at which the developing solution finishes dropping is larger than a flow rate at which the developing nozzle starts dropping on the surface of the substrate. Characteristic developing device. 6. A flow rate of 1 to start dropping a developing solution onto a substrate.
The flow rate of the developer is set to 0 to 15 l / min, and a flow rate of the developing solution from the start of dropping is set to be 1 to 5 l / min from the flow rate of starting the dropping. 6. The developing device according to claim 5, further comprising flow rate changing means in the developing liquid drop lower pipe for calculating using a value obtained by multiplying a flow rate difference by a ratio of time from the start of dropping to the time from the end of dropping to dropping. 7. A developing nozzle which moves while dropping a developing solution onto a substrate, and a developing solution concentration at the end of dropping is higher than a developing solution concentration at which the developing nozzle starts dropping onto the surface of the substrate. A developing device having means for providing a difference. 8. A developer concentration of 2.0% to 2.5% is adjusted to 10% by providing a pressure difference between the pressure of the developing solution which starts dropping on the surface of the substrate and the pressure of the developing solution which finishes dropping.
8. The developing device according to claim 7, wherein the developing liquid drop lowering pipe is provided with a means that can be varied within a range of from about 60 seconds.