JP2002536835A - Solar cell manufacturing method - Google Patents
Solar cell manufacturing methodInfo
- Publication number
- JP2002536835A JP2002536835A JP2000597846A JP2000597846A JP2002536835A JP 2002536835 A JP2002536835 A JP 2002536835A JP 2000597846 A JP2000597846 A JP 2000597846A JP 2000597846 A JP2000597846 A JP 2000597846A JP 2002536835 A JP2002536835 A JP 2002536835A
- Authority
- JP
- Japan
- Prior art keywords
- film
- plasma
- coating
- thickness
- solar cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title description 7
- 238000000034 method Methods 0.000 claims abstract description 19
- 238000000576 coating method Methods 0.000 claims abstract description 18
- 239000011248 coating agent Substances 0.000 claims abstract description 14
- 239000012876 carrier material Substances 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims abstract description 9
- 230000009477 glass transition Effects 0.000 claims abstract description 8
- 238000005496 tempering Methods 0.000 claims abstract description 8
- 229910004613 CdTe Inorganic materials 0.000 claims description 18
- 239000011112 polyethylene naphthalate Substances 0.000 claims description 4
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims description 3
- 239000011368 organic material Substances 0.000 claims description 3
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 claims description 3
- -1 polyethylene terephthalate Polymers 0.000 claims description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 3
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 3
- 239000002861 polymer material Substances 0.000 claims description 2
- 230000001681 protective effect Effects 0.000 claims description 2
- 229920000620 organic polymer Polymers 0.000 claims 1
- 239000010408 film Substances 0.000 description 13
- 239000011521 glass Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000005266 casting Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000002105 nanoparticle Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000007670 refining Methods 0.000 description 2
- 238000000859 sublimation Methods 0.000 description 2
- 230000008022 sublimation Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000012799 electrically-conductive coating Substances 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 229920005570 flexible polymer Polymers 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000005499 meniscus Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- TUQOTMZNTHZOKS-UHFFFAOYSA-N tributylphosphine Chemical compound CCCCP(CCCC)CCCC TUQOTMZNTHZOKS-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
- H01L31/1836—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising a growth substrate not being an AIIBVI compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03925—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIIBVI compound materials, e.g. CdTe, CdS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
(57)【要約】 有機ポリマー担体材料を少なくとも１つのフイルムでコーティングし、そしてこのようにコーティングされた材料を調質する方法であって、担体材料は少なくとも６０μｍの厚さを有しそして少なくとも９０℃のガラス転移温度を有するポリマー材料からなり、適用されたフイルムは最大３０μｍの厚さを有し、コーティングはガラス転移温度より低い温度で行われ、そして調質は少なくとも２５０℃の温度でプラズマによって行われる方法。 (57) [Summary] A method of coating an organic polymeric carrier material with at least one film and tempering the material so coated, wherein the carrier material has a thickness of at least 60 μm and has a glass transition temperature of at least 90 ° C. A method wherein the applied film has a thickness of up to 30 μm, the coating is performed at a temperature below the glass transition temperature, and the tempering is performed by plasma at a temperature of at least 250 ° C.
Description
【０００１】[0001]
本発明は、薄膜太陽電池（ｔｈｉｎ−ｆｉｌｍ ｓｏｌａｒ ｃｅｌｌｓ）、
例えばＣｄＴｅ太陽電池（ＣｄＴｅ＝テルル化カドミウム）の経済的に改良され
た製造方法に関する。以下においてＣｄＴｅは単にすべての薄膜太陽電池の一例
として取扱う。The present invention relates to thin-film solar cells,
For example, it relates to an economically improved method for producing CdTe solar cells (CdTe = cadmium telluride). In the following, CdTe is treated merely as an example of all thin-film solar cells.
【０００２】 ＣｄＴｅ太陽電池及びＣｄＴｅ／ＣｄＳ太陽電池は、普通は十分な効率を保証
するための最低５７５℃での熱処理を含んでなる種々の方法（米国特許第５３０
４４９９号）に従って製造することができる。これらの温度は担体として高価な
タイプのガラスの使用しか許容しない。担体としてのガラスは、どのコーティン
グ方法が選ばれるかに関係なく、ＣｄＴｅによるコーティングをガラスシート上
に不連続的にしか行うことができないという欠点を有する。[0002] CdTe solar cells and CdTe / CdS solar cells are usually manufactured by various methods comprising heat treatment at a minimum of 575 ° C. to guarantee sufficient efficiency (US Pat. No. 530
No. 4499). These temperatures only allow the use of expensive types of glass as a carrier. Glass as a carrier has the disadvantage that the coating with CdTe can only be performed discontinuously on the glass sheet, irrespective of which coating method is chosen.
【０００３】 米国特許第５３０４４４９号はコーティング温度が４８０〜５２０℃にしかな
らず、かくして安価なタイプのガラス（「窓用ガラス」）の使用を可能とする方
法を記載している。[0003] US Pat. No. 5,304,449 describes a method in which the coating temperature is only 480-520 ° C., thus allowing the use of inexpensive types of glass (“window glass”).
【０００４】 このために、ガラスが最初に例えばドープされた酸化錫からなる透明な電気伝
導性コーティングを備えていることが必要である。次いで硫化カドミウム（Ｃｄ
Ｓ）の薄いコーティングが続き、次いでそれに感光性ＣｄＴｅフイルムが４８０
〜５２０℃での昇華により適用される。For this purpose, it is necessary that the glass is first provided with a transparent, electrically conductive coating, for example made of doped tin oxide. Next, cadmium sulfide (Cd
S) followed by a thin coating, followed by 480 photosensitive CdTe film.
Applied by sublimation at ５520 ° C.
【０００５】 ＣｄＴｅフイルムを適用するのに必要な装置は複雑でありそして高価である。
即ち、担体材料及びＣｄＴｅソースは、ＣｄＴｅソースが担体表面からたったの
２〜３ｍｍの距離に配列されるように、必要な温度に加熱された対向して配置さ
れたグラファイトブロックにより収容される。次いで昇華は０．１ミリバールの
不活性ガス雰囲気、例えば窒素、ヘリウム、アルゴン又は水素雰囲気中で行われ
る。太陽電池の製造のためのＣｄＴｅコーティングされた材料の大きな表面はこ
の方法では費用効果的に製造することはできない。 この方法及び他の既知の方
法はポリマー有機材料としての担体シートの使用を許容しない。[0005] The equipment required to apply a CdTe film is complex and expensive.
That is, the carrier material and CdTe source are contained by opposed graphite blocks heated to the required temperature such that the CdTe source is arranged at a distance of only 2-3 mm from the carrier surface. Sublimation is then carried out in an inert gas atmosphere of 0.1 mbar, for example a nitrogen, helium, argon or hydrogen atmosphere. Large surfaces of CdTe coated materials for the production of solar cells cannot be produced cost-effectively with this method. This and other known methods do not allow the use of carrier sheets as polymeric organic materials.
【０００６】 本発明の目的は、支持体と該支持体上の光起電力的に活性な層（ｐｈｏｔｏｖ
ｏｌｔａｉｃａｌｌｙ ａｃｔｉｖｅ ｌａｙｅｒ）、例えばＣｄＴｅ層を有す
る太陽電池を費用効果的方法で製造するための材料を製造することであった。An object of the present invention is to provide a support and a photovoltaically active layer (photov) on the support.
The objective was to produce materials for cost-effectively producing solar cells with an organically active layer, for example a CdTe layer.
【０００７】 ＣｄＴｅでコーティングしそしてポリマー担体材料を高温により損傷を受ける
ことなく調質する（ｔｅｍｐｅｒｉｎｇ）ための柔軟性ポリマーシートの使用を
許容する方法が今回見いだされた。この方法では、高い効率の太陽電池のための
出発材料が得られる。[0007] A method has now been found that allows the use of flexible polymer sheets to be coated with CdTe and tempered the polymeric carrier material without being damaged by high temperatures. In this way, starting materials for high efficiency solar cells are obtained.
【０００８】 この方法は、他の物質でコーティングし、そして例えば、インジウム−酸化錫
（ＩＴＯ）の透明な伝導性フイルムの製造のために、調質するのにも適当である
。The method is also suitable for coating with other substances and for tempering, for example, for the production of transparent conductive films of indium-tin oxide (ITO).
【０００９】 従って、本発明は、有機ポリマー担体材料を少なくとも１つの物質、特に少な
くとも１つの無機物質、好ましくはＣｄＴｅでコーティングし、そしてこのよう
にコーティングされた材料に適用されたフイルムを調質する方法であって、担体
材料が少なくとも６０μｍ、特に９０〜１２０μｍの厚さを有しそして少なくと
も９０℃のガラス転移温度を有するポリマー材料からなり、適用されたフイルム
は最大３０μｍ、特に２〜７μｍの厚さを有し、コーティングはガラス転移温度
より低い温度で行われ、そして調質は少なくとも２５０℃、特に４００〜６００
℃の温度でプラズマによって行われることを特徴とする方法に関する。Thus, the present invention coats an organic polymeric carrier material with at least one substance, in particular at least one inorganic substance, preferably CdTe, and conditions a film applied to the material so coated. Process, wherein the carrier material has a thickness of at least 60 μm, in particular 90 to 120 μm and consists of a polymer material having a glass transition temperature of at least 90 ° C., the applied film having a thickness of at most 30 μm, in particular 2 to 7 μm. The coating is performed at a temperature below the glass transition temperature, and the tempering is at least 250 ° C., especially 400-600
Performed by a plasma at a temperature of ° C.
【００１０】 プラズマは、ガスが等しい部の正及び負に帯電した粒子からなり、それにより
外面的に中性である物質の凝集体状態であると理解されるべきである。原子の残
部からの殻電子の分離による非常に高い温度でのプラズマの生成は知られている
。[0010] It is to be understood that a plasma consists of an equal part of positive and negatively charged particles, whereby it is an agglomerate of substances that are externally neutral. The generation of plasma at very high temperatures by the separation of shell electrons from the rest of the atoms is known.
【００１１】 プラズマ焼結として知られた本発明に従う方法は、焦点において電界強度の大
きさが、空気分子、しかし好ましくは保護ガス、例えば窒素又はアルゴンの電子
がそれらの原子芯(atomic cores)から離脱し、それによりプラズマが形成される
ようになる十分な強度のレーザーを焦点に集めることにより行われる。このプラ
ズマは高温でありそして膨張する。レーザーがレーザーのパルス周波数で焦点に
おいてパルス化されるならば、その周囲に対する対応する周波数の圧力サージ（
ｐｒｅｓｓｕｒｅ ｓｕｒｇｅｓ）を有する脈動プラズマ（ｐｕｌｓａｔｉｎｇ
ｐｌａｓｍａ）が得られる。この脈動プラズマは焼結されるべきフイルムの上
に導かれることができ、それによりその場合に３つの事象が起こる。即ち、 フイルムは直接レーザーを吸収し、それにより加熱され、 フイルムはその表面に沿って滑る高温プラズマにより更に加熱され、 脈動プラズマは圧力サージを発生し、それは機械的にフイルムを圧縮する。The method according to the invention, known as plasma sintering, is characterized in that the magnitude of the electric field strength at the focus is such that electrons of air molecules, but preferably protective gas, for example nitrogen or argon, are displaced from their atomic cores. This is done by focusing a laser of sufficient intensity to escape and thereby form a plasma. This plasma is hot and expands. If the laser is pulsed at the focus at the pulse frequency of the laser, a pressure surge of the corresponding frequency to its surroundings (
Pulsating plasma with pressure surges
plasma) is obtained. This pulsating plasma can be directed onto the film to be sintered, thereby causing three events. That is, the film directly absorbs the laser and is thereby heated, the film is further heated by the hot plasma gliding along its surface, and the pulsating plasma generates a pressure surge, which compresses the film mechanically.
【００１２】 適当なレーザーは、例えば、１００ｍＪのパルスエネルギー及び５０Ｈｚのパ
ルス周波数を有するネオジム−ＹＡＧレーザーである。A suitable laser is, for example, a neodymium-YAG laser having a pulse energy of 100 mJ and a pulse frequency of 50 Hz.
【００１３】 好ましくは、焼結されるべき層は、該層を加熱するが、材料の与えられた輸送
速度でそれを損傷しない連続レーザーにより照射され、次いで脈動レーザーが材
料の加熱されたゾーンを焼結する。Preferably, the layer to be sintered is irradiated by a continuous laser that heats the layer but does not damage it at a given transport speed of the material, and then a pulsating laser passes through the heated zone of the material. Sinter.
【００１４】 コーティングは例えば水性又は溶媒含有ＣｄＴｅ懸濁液を使用して行われる。The coating is performed, for example, using an aqueous or solvent-containing CdTe suspension.
【００１５】 次いで材料を乾燥させる。適当なコーティング方法は例えばキャスティング及
びブレードコーティングからなる。The material is then dried. Suitable coating methods include, for example, casting and blade coating.
【００１６】 調質は数回行うことができ、冷却相が好ましくは２つの調質段階の間に与えら
れる。The refining can be performed several times, the cooling phase preferably being provided between the two refining stages.
【００１７】 適当なポリマーはポリエチレンテレフタレート（ＰＥＴ）及びポリエチレンナ
フタレート（ＰＥＮ）である。コーティングの前に、ポリマー担体材料は、Ｃｄ
Ｔｅフイルムの接着を改良する例えばインジウム−酸化錫からなる基材層を備え
ていることができる。基材層は透明でありそして電気伝導性であるべきである。[0017] Suitable polymers are polyethylene terephthalate (PET) and polyethylene naphthalate (PEN). Prior to coating, the polymer carrier material may comprise Cd
A substrate layer comprising, for example, indium-tin oxide for improving the adhesion of the Te film can be provided. The substrate layer should be transparent and electrically conductive.
【００１８】 有機ポリマー担体材料は柔軟性であり、かくして適当なコーティング方法、例
えば、キャスチング装置、例えば、写真フイルムのコーティングと関連して知ら
れているメニスカスもしくはカーテンキャスチング装置（ｍｅｎｉｓｃｕｓ ｏ
ｒ ｃｕｒｔａｉｎ ｃａｓｔｉｎｇ ｄｅｖｉｃｅｓ）を使用する連続コーテ
ィング方法に従う連続コーティングを可能とする。The organic polymeric carrier material is flexible and thus suitable coating methods, for example a casting device, for example a meniscus or curtain casting device known in connection with the coating of photographic films.
It allows continuous coating according to a continuous coating method using r curtain casting devices.
【００１９】 ＣｄＴｅ粒子が特に微細粒子であること、特にいわゆるナノ粒子、即ち、その
平均直径がナノメートル範囲にありそして例えば３〜５ｎｍである粒子からなる
ことが特に有利でありうる。It may be particularly advantageous for the CdTe particles to be particularly fine particles, especially so-called nanoparticles, ie particles whose average diameter is in the nanometer range and is for example 3-5 nm.
【００２０】 この場合に、実際にナノ粒子の製造中に、ナノ粒子の凝集を阻止する作用物質
（ａｇｅｎｔ）、例えばトリブチルホスファンを加えることが好都合である。In this case, it is advantageous to add, during the production of the nanoparticles, an agent which prevents aggregation of the nanoparticles, for example tributylphosphane.
【００２１】 本発明は更に、担体が少なくとも６０μｍの厚さ及び少なくとも９０℃のガラ
ス転移温度を有するポリマー有機材料であることを特徴とする、担体上に最大３
０μｍの厚さを有する少なくとも１つのＣｄＴｅフイルムを有する太陽電池に関
する。The invention further provides that the support is a polymeric organic material having a thickness of at least 60 μm and a glass transition temperature of at least 90 ° C.
The present invention relates to a solar cell having at least one CdTe film having a thickness of 0 μm.
【００２２】 実施例１ １００ｃｍの幅を有するＰＥＮの１００μｍの厚さのシートを分散剤及びリッ
トル当たり３１ｇのテルル化カドミウムを含有する懸濁液により連続的にコーテ
ィングする。次いでコーティングされたシートは乾燥され、そして５μｍの適用
されたフイルムの乾燥層厚さを有する。 Example 1 A 100 μm thick sheet of PEN having a width of 100 cm is continuously coated with a suspension containing a dispersant and 31 g of cadmium telluride per liter. The coated sheet is then dried and has a dry layer thickness of the applied film of 5 μm.
【００２３】 シートを下記のように調質する。The sheet is tempered as follows.
【００２４】 １００ｍＪのパルスエネルギー及び５０Ｈｚのパルス周波数を有するネオジム
−ＹＡＧレーザーを、脈動プラズマがシートのすぐ上に形成されるように焦点に
集める。焼結されるべき全体の表面が引き続いて、しかしシートが損傷を受けな
いように十分に短く加熱されるように、シートをこのプラズマの下で格子様方式
（ｇｒｉｄ−ｌｉｋｅ ｍａｎｎｅｒ）で移動させる。A neodymium-YAG laser having a pulse energy of 100 mJ and a pulse frequency of 50 Hz is focused so that a pulsating plasma is formed just above the sheet. The sheet is moved in a grid-like manner under this plasma so that the entire surface to be sintered is subsequently heated, but short enough that the sheet is not damaged.
【００２５】 調質した後、シートは光依存性電気抵抗を有しており、かくして光電池の製造
に適当である。After tempering, the sheet has a light-dependent electrical resistance and is thus suitable for the production of photovoltaic cells.
【００２６】 実施例２ 実施例１に従うＰＥＮのシートを実施例１に従ってコーティングしそして乾燥
する。次いでシートをダイオードレーザーにより８ｋＷ／ｃｍ2のパワー及び１
００ｍｓの各正方形要素の暴露期間で連続的に加熱し、しかる後１００ｍＪのパ
ルスエネルギー及び５０Ｈｚのパルス周波数を有する脈動プラズマを、ネオジム
−ＹＡＧレーザーにより焼結されるべき層の表面のすぐ上に生成させる。 Example 2 A sheet of PEN according to Example 1 is coated according to Example 1 and dried. The sheet was then treated with a diode laser at a power of 8 kW / cm 2 and 1
A continuous heating with an exposure time of each square element of 00 ms, followed by the generation of a pulsating plasma with a pulse energy of 100 mJ and a pulse frequency of 50 Hz directly above the surface of the layer to be sintered by the neodymium-YAG laser Let it.
【００２７】 調質の後、シートは光電池の製造に適当である。After tempering, the sheet is suitable for photovoltaic cell manufacture.
Claims (10)
ィングし、そしてこのようにコーティングされた材料を調質する方法であって、
該担体材料は少なくとも６０μｍ、特に９０〜１２０μｍの厚さを有しそして少
なくとも９０℃のガラス転移温度を有するポリマー材料からなり、適用されるフ
イルムは最大３０μｍ、特に２〜７μｍの厚さを有し、コーティングはガラス転
移温度より低い温度で行われ、そして調質は少なくとも２５０℃、特に４００〜
６００℃の温度でプラズマによって行われることを特徴とする方法。1. A method of coating an organic polymer carrier material with at least one film and tempering the material so coated, comprising:
The carrier material has a thickness of at least 60 μm, in particular 90 to 120 μm and consists of a polymer material having a glass transition temperature of at least 90 ° C., the film applied has a thickness of at most 30 μm, in particular 2 to 7 μm. The coating is carried out at a temperature below the glass transition temperature, and the tempering is at least 250 ° C., in particular 400 to
A method performed by plasma at a temperature of 600 ° C.
とを特徴とする請求項１に記載の方法。2. The method according to claim 1, wherein the applied film is a photovoltaically active film.
する請求項１に記載の方法。3. The method according to claim 1, wherein the applied film is a CdTe film.
項１に記載の方法。4. The method according to claim 1, wherein the plasma is generated by a laser.
る請求項４に記載の方法。5. The method according to claim 4, wherein the laser is operated in a pulsed mode.
１に記載の方法。6. The method according to claim 1, wherein the plasma is generated from a protective gas.
とを特徴とする請求項１に記載の方法。7. The method according to claim 1, wherein the material is heated with a continuous laser before treatment with the plasma.
ラス転移温度を有するポリマー有機材料であることを特徴とする、担体上に３０
μｍの最大厚さを有する少なくとも１つの光起電力的に活性なフイルムを有する
太陽電池。8. The method according to claim 1, wherein the carrier is a polymeric organic material having a thickness of at least 60 μm and a glass transition temperature of at least 90 ° C.
A solar cell having at least one photovoltaically active film having a maximum thickness of μm.
ることを特徴とする請求項８に記載の太陽電池。9. The solar cell according to claim 8, wherein the photovoltaically active film contains cadmium telluride.
タレートからなることを特徴とする請求項８に記載の太陽電池。10. The solar cell according to claim 8, wherein the carrier is made of polyethylene terephthalate or polyethylene naphthalate.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19904082A DE19904082A1 (en) | 1999-02-02 | 1999-02-02 | Process for the production of solar cells |
| DE19904082.6 | 1999-02-02 | ||
| PCT/EP2000/000397 WO2000046861A1 (en) | 1999-02-02 | 2000-01-18 | A method for the production of solar cells |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2002536835A true JP2002536835A (en) | 2002-10-29 |
Family
ID=7896136
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000597846A Pending JP2002536835A (en) | 1999-02-02 | 2000-01-18 | Solar cell manufacturing method |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP1159765A1 (en) |
| JP (1) | JP2002536835A (en) |
| DE (1) | DE19904082A1 (en) |
| WO (1) | WO2000046861A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013135165A (en) * | 2011-12-27 | 2013-07-08 | Ricoh Co Ltd | Thin film manufacturing device, thin-film manufacturing method, droplet discharge head, and ink jet recording device |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU2002233930A1 (en) * | 2000-11-16 | 2002-05-27 | Solarflex Technologies, Inc. | System and methods for laser assisted deposition |
| US6548751B2 (en) | 2000-12-12 | 2003-04-15 | Solarflex Technologies, Inc. | Thin film flexible solar cell |
| DE102004060737B4 (en) * | 2004-12-15 | 2007-03-08 | Degussa Ag | Process for the preparation of semiconducting or photovoltaically active films |
| WO2008073763A2 (en) | 2006-12-07 | 2008-06-19 | Innovalight, Inc. | Methods for creating a densified group iv semiconductor nanoparticle thin film |
| EP2140483A1 (en) | 2007-04-04 | 2010-01-06 | Innovalight, Inc. | Methods for optimizing thin film formation with reactive gases |
| US8968438B2 (en) | 2007-07-10 | 2015-03-03 | Innovalight, Inc. | Methods and apparatus for the in situ collection of nucleated particles |
| US7851336B2 (en) | 2008-03-13 | 2010-12-14 | Innovalight, Inc. | Method of forming a passivated densified nanoparticle thin film on a substrate |
| US8247312B2 (en) | 2008-04-24 | 2012-08-21 | Innovalight, Inc. | Methods for printing an ink on a textured wafer surface |
| DE102010004996B4 (en) * | 2010-01-19 | 2014-03-06 | Institut Für Photonische Technologien E.V. | Process for producing a cadmium telluride solar cell |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5536950A (en) * | 1978-09-05 | 1980-03-14 | Fuji Photo Film Co Ltd | Manufacturing of thin film photocell |
| JPS58194377A (en) * | 1982-05-07 | 1983-11-12 | Agency Of Ind Science & Technol | Manufacture of thin film solar battery |
| IT1205350B (en) * | 1984-03-21 | 1989-03-15 | Gianfranco Vitali | IMPROVEMENT OF CRYSTALLINE STRUCTURES IN SEMICONDUCTORS IN ALLOY OR NOT BY LASER IMPULSES |
| JPS61168271A (en) * | 1985-01-21 | 1986-07-29 | Sumitomo Bakelite Co Ltd | Amorphous silicon solar battery |
| JPH0671091B2 (en) * | 1985-10-08 | 1994-09-07 | 帝人株式会社 | Thin film solar cell |
| US5389195A (en) * | 1991-03-07 | 1995-02-14 | Minnesota Mining And Manufacturing Company | Surface modification by accelerated plasma or ions |
| JPH0590624A (en) * | 1991-09-28 | 1993-04-09 | Nissha Printing Co Ltd | Adhesive material for solar battery |
| DE4132882C2 (en) * | 1991-10-03 | 1996-05-09 | Antec Angewandte Neue Technolo | Process for the production of pn CdTe / CdS thin-film solar cells |
| JPH06163958A (en) * | 1992-02-21 | 1994-06-10 | Semiconductor Energy Lab Co Ltd | Semiconductor device and its manufacture |
| US5714391A (en) * | 1995-05-17 | 1998-02-03 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing a compound semiconductor thin film for a photoelectric or solar cell device |
| JP2002521848A (en) * | 1998-07-30 | 2002-07-16 | アグフア−ゲヴエルト，ナームローゼ・フエンノートシヤツプ | Solar cell manufacturing method |
-
1999
- 1999-02-02 DE DE19904082A patent/DE19904082A1/en not_active Withdrawn
-
2000
- 2000-01-18 JP JP2000597846A patent/JP2002536835A/en active Pending
- 2000-01-18 EP EP00904935A patent/EP1159765A1/en not_active Withdrawn
- 2000-01-18 WO PCT/EP2000/000397 patent/WO2000046861A1/en not_active Application Discontinuation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013135165A (en) * | 2011-12-27 | 2013-07-08 | Ricoh Co Ltd | Thin film manufacturing device, thin-film manufacturing method, droplet discharge head, and ink jet recording device |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2000046861A1 (en) | 2000-08-10 |
| EP1159765A1 (en) | 2001-12-05 |
| DE19904082A1 (en) | 2000-08-03 |
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