EP1159765A1 - A method for the production of solar cells - Google Patents

A method for the production of solar cells

Info

Publication number
EP1159765A1
EP1159765A1 EP00904935A EP00904935A EP1159765A1 EP 1159765 A1 EP1159765 A1 EP 1159765A1 EP 00904935 A EP00904935 A EP 00904935A EP 00904935 A EP00904935 A EP 00904935A EP 1159765 A1 EP1159765 A1 EP 1159765A1
Authority
EP
European Patent Office
Prior art keywords
film
plasma
carrier
coating
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP00904935A
Other languages
German (de)
French (fr)
Inventor
Klaus Peter Crone
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Agfa Gevaert NV
Original Assignee
Agfa Gevaert NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agfa Gevaert NV filed Critical Agfa Gevaert NV
Publication of EP1159765A1 publication Critical patent/EP1159765A1/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H01L31/1836—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising a growth substrate not being an AIIBVI compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03925—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIIBVI compound materials, e.g. CdTe, CdS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1864—Annealing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • CdTe cadmium telluride
  • CdTe serves merely as an example of all thin-film solar cells.
  • CdTe- and CdTe/CdS solar cells can be produced in accordance with different methods (US 5 304499) commonly comprising a thermal treatment at a minimum of 575°C to ensure adequate efficiency. These temperatures only permit the use of expensive types of glass as carrier. Glass as a carrier has the disadvantage that the coating with CdTe can be performed only discontinuously on glass sheets, irrespectively of which coating method is selected.
  • the glass firstly to be provided with a transparent, electrically conductive coating, consisting for example of doped tin oxide.
  • a transparent, electrically conductive coating consisting for example of doped tin oxide.
  • a thin coating of cadmium sulphide (CdS) then follows, to which the light-sensitive CdTe film is then applied by sublimation at 480 to 520°C.
  • carrier material and CdTe source are accommodated by oppositely disposed graphite blocks heated to the required temperature, such that the CdTe source is arranged at a distance of only 2 to 3 mm from the carrier surface.
  • the sublimation then takes place in a 0.1 mbar inert gas atmosphere, e.g. a nitrogen-, helium-, argon- or hydrogen atmosphere.
  • a nitrogen-, helium-, argon- or hydrogen atmosphere Large surfaces of CdTe-coated material for the manufacture of solar cells cannot be produced cost-effectively in this way.
  • the object of the invention was to produce a material for the manufacture of solar cells with a support and a photovoltaically active layer on said support, e.g. a CdTe layer, in a cost-effective manner.
  • the method is also suitable for coating with other substances and tempering, for example for the production of transparent, conductive films of indium-tin oxide (ITO).
  • ITO indium-tin oxide
  • the invention relates to a method of coating organic-polymeric carrier materials with at least one substance, in particular at least one inorganic substance, preferably CdTe, and tempering of the film applied to the thus coated materials, characterised in that the carrier material has a thickness of at least 60 ⁇ m, in particular 90 to 120 ⁇ m, and consists of a polymeric material with a glass transition temperature of at least 90°C, the applied film has a thickness of a maximum of 30 ⁇ m, in particular 2 to 7 ⁇ m, the coating is performed at temperatures below the glass transition temperature and the tempering is performed at temperatures of at least 250°C, in particular 400 to 600°C, by means of a plasma.
  • the carrier material has a thickness of at least 60 ⁇ m, in particular 90 to 120 ⁇ m, and consists of a polymeric material with a glass transition temperature of at least 90°C
  • the applied film has a thickness of a maximum of 30 ⁇ m, in particular 2 to 7 ⁇ m
  • the coating is performed at temperatures below the
  • Plasma is to be understood as that aggregation state of the matter wherein a gas consist to equal parts of positive and negative charged particles and thereby is externally neutral.
  • the production of a plasma at very high temperatures by separation of shell electrons from the atomic residue is known.
  • the method according to the invention is performed by focusing a laser of sufficient strength that at the focal point the magnitude of the electric field strength becomes such that the electrons of the air molecules, preferably however a protective gas such as nitrogen or argon, break away from their atomic cores, whereby the plasma forms.
  • This plasma is hot and expands. If the laser is pulsed, in focus with the pulse frequency of the laser one obtains a pulsating plasma with correspondingly frequent pressure surges to its environment. This pulsating plasma can be conducted over the film to be sintered, whereby three events then occur:
  • the film absorbs the laser directly and is thereby heated, the film is additionally heated by the hot plasma sliding along its surface, the pulsating plasma produces pressure surges which mechanically compress the film.
  • a suitable laser is, for example, a neodymium-YAG laser with 100 mJ pulse energy and 50 Hz pulse frequency.
  • the layer to be sintered is irradiated with a continuous laser which heats the layer but does not damage it at the given transportation speed of material.
  • the pulsing laser then sinters the heated zone of the material.
  • the coating is performed, for example, using an aqueous or solvent-containing CdTe suspension.
  • Suitable coating methods consist for example of casting and blade coating.
  • the tempering can be performed several times; cooling phases are preferably provided between two tempering steps.
  • Suitable polymers are polyethylene terephthalate (PET) and polyethylene naphthalate (PEN).
  • PET polyethylene terephthalate
  • PEN polyethylene naphthalate
  • the polymeric carrier material Prior to the coating the polymeric carrier material can be provided with a substrate layer, consisting for example of indium-tin oxide, which improves the adhesion of the CdTe film.
  • the substrate layer is to be transparent and electrically conductive.
  • Organic-polymeric carrier materials are flexible and thus permit continuous coating in accordance with a suitable coating method, for example a continuous coating method using a casting device, for example a meniscus or curtain casting device as known in association with the coating of photographic film.
  • the CdTe particles may be especially fine- particled, and in particular to consist of so-called nano-particles, i.e. particles whose average diameter is in the nanometre range and amounts for example to 3 to 5 nm.
  • the invention further relates to a solar cell with at least one CdTe film having a thickness of a maximum of 30 ⁇ m on a carrier, characterised in that the carrier is a polymeric organic material having a thickness of at least 60 ⁇ m and a glass transition temperature of at least 90°C.
  • a 100 ⁇ m thick sheet of PEN with a width of 100 cm is continuously coated with a suspension containing a dispersant and, per litre, 31 g cadmium telluride. Then the coated sheet is dried and has a dry layer thickness of the applied film of 5 ⁇ m.
  • the sheet is tempered as follows:
  • a neodymium-YAG-laser with lOO mJ pulse energy and 50 Hz pulse frequency is focused such that a pulsating plasma forms closely above the sheet.
  • the sheet is moved in grid-like manner under this plasma so that the entire surface to be sintered is heated successively, yet sufficiently briefly that the sheet is not damaged.
  • a sheet of PEN according to Example 1 is coated and dried according to Example 1. Then the sheet is continuously heated by a diode laser with a power of 8 kW/cm 2 and a duration of exposition of each square element of 100 ms, and thereafter a pulsating plasma with 100 mJ pulse energy and 50 Hz pulse frequency is produced closely above the surface of the layer to be sintered by a neodymium-YAG-laser.
  • the sheet After tempering the sheet is suitable for the production of a photovoltaic cell.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)

Abstract

An economical method of coating organic-polymeric carrier materials with at least one film and tempering the thus coated materials, wherein the carrier material has a thickness of at least 60 νm and consists of a polymeric material with a glass transition temperature of at least 90 °C, the applied film has a thickness of a maximum of 30 νm, the coating is performed at temperatures below the glass transition temperature and the tempering is performed at temperatures of at least 250 °C by means of a plasma.

Description

A Method for the Production of Solar Cells
FIELD OF THE INVENTION
The invention relates to an economically improved method for the production of thin- film solar cells, e.g. CdTe solar cells (CdTe = cadmium telluride). In the following CdTe serves merely as an example of all thin-film solar cells.
CdTe- and CdTe/CdS solar cells can be produced in accordance with different methods (US 5 304499) commonly comprising a thermal treatment at a minimum of 575°C to ensure adequate efficiency. These temperatures only permit the use of expensive types of glass as carrier. Glass as a carrier has the disadvantage that the coating with CdTe can be performed only discontinuously on glass sheets, irrespectively of which coating method is selected.
US 5 304499 describes a method wherein the coating temperatures amount only to 480 to 520°C and thus permit the use of cheap types of glass ("window glass").
For this, it is necessary for the glass firstly to be provided with a transparent, electrically conductive coating, consisting for example of doped tin oxide. A thin coating of cadmium sulphide (CdS) then follows, to which the light-sensitive CdTe film is then applied by sublimation at 480 to 520°C.
The apparatus required to apply the CdTe film is complicated and costly: carrier material and CdTe source are accommodated by oppositely disposed graphite blocks heated to the required temperature, such that the CdTe source is arranged at a distance of only 2 to 3 mm from the carrier surface. The sublimation then takes place in a 0.1 mbar inert gas atmosphere, e.g. a nitrogen-, helium-, argon- or hydrogen atmosphere. Large surfaces of CdTe-coated material for the manufacture of solar cells cannot be produced cost-effectively in this way.
This method and the other known methods do not permit the use of carrier sheets as polymeric organic materials. The object of the invention was to produce a material for the manufacture of solar cells with a support and a photovoltaically active layer on said support, e.g. a CdTe layer, in a cost-effective manner.
A method has now been found which permits the use of flexible polymeric sheets for coating with CdTe and tempering without the polymeric carrier material undergoing damage due to the high temperatures. In this way a starting material for solar cells of high efficiency is obtained.
The method is also suitable for coating with other substances and tempering, for example for the production of transparent, conductive films of indium-tin oxide (ITO).
Therefore the invention relates to a method of coating organic-polymeric carrier materials with at least one substance, in particular at least one inorganic substance, preferably CdTe, and tempering of the film applied to the thus coated materials, characterised in that the carrier material has a thickness of at least 60 μm, in particular 90 to 120 μm, and consists of a polymeric material with a glass transition temperature of at least 90°C, the applied film has a thickness of a maximum of 30 μm, in particular 2 to 7 μm, the coating is performed at temperatures below the glass transition temperature and the tempering is performed at temperatures of at least 250°C, in particular 400 to 600°C, by means of a plasma.
Plasma is to be understood as that aggregation state of the matter wherein a gas consist to equal parts of positive and negative charged particles and thereby is externally neutral. The production of a plasma at very high temperatures by separation of shell electrons from the atomic residue is known.
The method according to the invention, known as plasma sintering, is performed by focusing a laser of sufficient strength that at the focal point the magnitude of the electric field strength becomes such that the electrons of the air molecules, preferably however a protective gas such as nitrogen or argon, break away from their atomic cores, whereby the plasma forms. This plasma is hot and expands. If the laser is pulsed, in focus with the pulse frequency of the laser one obtains a pulsating plasma with correspondingly frequent pressure surges to its environment. This pulsating plasma can be conducted over the film to be sintered, whereby three events then occur:
the film absorbs the laser directly and is thereby heated, the film is additionally heated by the hot plasma sliding along its surface, the pulsating plasma produces pressure surges which mechanically compress the film.
A suitable laser is, for example, a neodymium-YAG laser with 100 mJ pulse energy and 50 Hz pulse frequency.
Preferably, the layer to be sintered is irradiated with a continuous laser which heats the layer but does not damage it at the given transportation speed of material. The pulsing laser then sinters the heated zone of the material.
The coating is performed, for example, using an aqueous or solvent-containing CdTe suspension.
Then the material is dried. Suitable coating methods consist for example of casting and blade coating.
The tempering can be performed several times; cooling phases are preferably provided between two tempering steps.
Suitable polymers are polyethylene terephthalate (PET) and polyethylene naphthalate (PEN). Prior to the coating the polymeric carrier material can be provided with a substrate layer, consisting for example of indium-tin oxide, which improves the adhesion of the CdTe film. The substrate layer is to be transparent and electrically conductive. Organic-polymeric carrier materials are flexible and thus permit continuous coating in accordance with a suitable coating method, for example a continuous coating method using a casting device, for example a meniscus or curtain casting device as known in association with the coating of photographic film.
It may be particularly advantageous for the CdTe particles to be especially fine- particled, and in particular to consist of so-called nano-particles, i.e. particles whose average diameter is in the nanometre range and amounts for example to 3 to 5 nm.
In this case it is expedient, actually during the production of the nano-particles, to add an agent which prevents the agglomeration of the nano-particles, e.g. tributyl- phosphane.
The invention further relates to a solar cell with at least one CdTe film having a thickness of a maximum of 30 μm on a carrier, characterised in that the carrier is a polymeric organic material having a thickness of at least 60 μm and a glass transition temperature of at least 90°C.
Example 1
A 100 μm thick sheet of PEN with a width of 100 cm is continuously coated with a suspension containing a dispersant and, per litre, 31 g cadmium telluride. Then the coated sheet is dried and has a dry layer thickness of the applied film of 5 μm.
The sheet is tempered as follows:
A neodymium-YAG-laser with lOO mJ pulse energy and 50 Hz pulse frequency is focused such that a pulsating plasma forms closely above the sheet. The sheet is moved in grid-like manner under this plasma so that the entire surface to be sintered is heated successively, yet sufficiently briefly that the sheet is not damaged.
After the tempering the sheet has a light-dependent electric resistance and thus is suitable for the production of a photovoltaic cell. Example 2
A sheet of PEN according to Example 1 is coated and dried according to Example 1. Then the sheet is continuously heated by a diode laser with a power of 8 kW/cm2 and a duration of exposition of each square element of 100 ms, and thereafter a pulsating plasma with 100 mJ pulse energy and 50 Hz pulse frequency is produced closely above the surface of the layer to be sintered by a neodymium-YAG-laser.
After tempering the sheet is suitable for the production of a photovoltaic cell.

Claims

Claims
1. A method of coating organic-polymeric carrier materials with at least one film and tempering the thus coated materials, characterised in that the carrier material has a thickness of at least 60 μm, in particular 90 to 120 μm, and consists of a polymeric material with a glass transition temperature of at least 90°C, the applied film has a thickness of a maximum of 30 μm, in particular 2 to 7 μm, the coating is performed at temperatures below the glass transition temperature and the tempering is performed at temperatures of at least 250°C, in particular 400 to 600°C, by means of a plasma.
2. A method according to Claim 1, characterised in that the applied film is a photovoltaically active film.
3. A method according to Claim 1 , characterised in that the applied film is a CdTe film.
4. A method according to Claim 1 , characterised in that the plasma is produced by means of a laser.
5. A method according to Claim 4, characterised in that the laser is operated in pulsed mode.
6. A method according to Claim 1, characterised in that the plasma is produced from protective gas.
7. A method according to Claim 1 , characterized in that the material prior to the treatment with the plasma is heated with a continuous laser.
8. A solar cell with at least one photovoltaically active film having a maximum thickness of 30 μm on a carrier, characterised in that the carrier is a polymeric organic material having a thickness of at least 60 μm and a glass transition temperature of at least 90°C.
9. A solar cell according to Claim 8, characterised in that the photovoltaically active film contains cadmium telluride.
10. A solar cell according to Claim 8, characterised in that the carrier consists of polyethylene terephthalate or polyethylene naphthalate.
EP00904935A 1999-02-02 2000-01-18 A method for the production of solar cells Withdrawn EP1159765A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19904082 1999-02-02
DE19904082A DE19904082A1 (en) 1999-02-02 1999-02-02 Process for the production of solar cells
PCT/EP2000/000397 WO2000046861A1 (en) 1999-02-02 2000-01-18 A method for the production of solar cells

Publications (1)

Publication Number Publication Date
EP1159765A1 true EP1159765A1 (en) 2001-12-05

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EP00904935A Withdrawn EP1159765A1 (en) 1999-02-02 2000-01-18 A method for the production of solar cells

Country Status (4)

Country Link
EP (1) EP1159765A1 (en)
JP (1) JP2002536835A (en)
DE (1) DE19904082A1 (en)
WO (1) WO2000046861A1 (en)

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WO2002041363A2 (en) * 2000-11-16 2002-05-23 Solarflex Technologies, Inc. System and methods for laser assisted deposition
US6548751B2 (en) * 2000-12-12 2003-04-15 Solarflex Technologies, Inc. Thin film flexible solar cell
DE102004060737B4 (en) * 2004-12-15 2007-03-08 Degussa Ag Process for the preparation of semiconducting or photovoltaically active films
US7776724B2 (en) 2006-12-07 2010-08-17 Innovalight, Inc. Methods of filling a set of interstitial spaces of a nanoparticle thin film with a dielectric material
EP2140483A1 (en) * 2007-04-04 2010-01-06 Innovalight, Inc. Methods for optimizing thin film formation with reactive gases
US8968438B2 (en) 2007-07-10 2015-03-03 Innovalight, Inc. Methods and apparatus for the in situ collection of nucleated particles
US7851336B2 (en) 2008-03-13 2010-12-14 Innovalight, Inc. Method of forming a passivated densified nanoparticle thin film on a substrate
US8247312B2 (en) 2008-04-24 2012-08-21 Innovalight, Inc. Methods for printing an ink on a textured wafer surface
DE102010004996B4 (en) * 2010-01-19 2014-03-06 Institut Für Photonische Technologien E.V. Process for producing a cadmium telluride solar cell
JP5891782B2 (en) * 2011-12-27 2016-03-23 株式会社リコー Thin film manufacturing apparatus, thin film manufacturing method, liquid droplet ejection head, and ink jet recording apparatus

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JPH06163958A (en) * 1992-02-21 1994-06-10 Semiconductor Energy Lab Co Ltd Semiconductor device and its manufacture
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AU5285199A (en) * 1998-07-30 2000-02-21 Agfa-Gevaert Naamloze Vennootschap Method of producing solar cells

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Also Published As

Publication number Publication date
DE19904082A1 (en) 2000-08-03
WO2000046861A1 (en) 2000-08-10
JP2002536835A (en) 2002-10-29

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