JP2002520630A - Temperature Control of Electronic Devices Using Power Tracking Feedback - Google Patents

Abstract

(57) Abstract: A method for controlling the temperature of a device measures a parameter related to power consumption of the device and utilizes the parameter to control the temperature of the device. This can be achieved by a heat exchanger, a power monitor, and a circuit that controls the temperature setting of the heat exchanger. The circuit uses as input the power level, heat exchanger temperature, and set point. Thus, the present system eliminates the need for a temperature sensing device to be connected into or to the chip, responding to the temperature of the device rather than the package, and producing large volume chips. It can be used, does not require a large surface area of the device for temperature sensing, and eliminates the need for a chip power profile. In particular, the system allows the set point to be kept with minimal overshoot or undershoot.

Description

DETAILED DESCRIPTION OF THE INVENTION

TECHNICAL FIELD [0001] The present invention relates generally to the field of temperature control, and more particularly, to an improved apparatus and method for controlling the temperature of an electronic device using power tracking feedback.

BACKGROUND OF THE INVENTION [0002] The present invention relates to a temperature control system that maintains the temperature of an electronic device at or near a fixed set temperature during operation or testing. Two examples of electronic devices that perform optimally when the temperature is at or near a constant temperature include a packaged integrated chip and a non-packaged type, that is, a bare chip. If the power dissipation of the chip during operation or test is constant or varies only slightly, it is not difficult to maintain the chip temperature at a constant set value. One way to deal with such a situation is to transfer the chip to a constant temperature thermal mass via a fixed thermal resistor. However, if the instantaneous power dissipation of the chip fluctuates over a wide range during operation or test of the chip, it is very difficult to set the chip temperature to a fixed value or a temperature in the vicinity thereof.

[0003] Various temperature forcing systems have been utilized to address chip temperature fluctuations due to widespread chip power dissipation fluctuations. Feedback methods are also commonly used to detect fluctuating temperatures.
Generally, a temperature detecting device such as a thermocouple is usually attached to a chip package or the chip itself. Alternatively, a temperature sensing device, such as a thermal diode, is integrated into the chip circuit. Such temperature detectors are used to detect changes in the temperature of the chip and adjust the temperature capture system appropriately.

There are several problems with using temperature sensing devices. In the case of a packaged chip, an external thermocouple may detect the surface temperature of the package instead of the temperature of the chip in the package. At some level of power dissipation, this temperature difference can be significant to the test results. Therefore, such a problem has been dealt with by integrating the temperature detector into the chip itself, but it has brought another problem. It is not normal practice for chip manufacturers to integrate a temperature detector on a chip. When integrated on a chip, each chip's temperature detector has its own calibration requirements. The above causes problems in mass chip production.

[0005] Detachable temperature detectors, such as insertion thermocouples, included in automatic test and treatment equipment have been devised to address some of these problems. However, there remains a problem with the relationship between package temperature and die temperature. In addition, there is a problem in that the reliability of the detachable temperature detector involves a significant error in the results of mass chip production test. Moreover, the problem is further complicated by the fact that the surface used for temperature control is the same as that required for the removable temperature sensor.

Accordingly, there is a need for a temperature controller and method for an electronic device that can respond to the temperature of the electronic device rather than the package. There is also a need for a temperature control device and method for electronic devices that can be conveniently used for mass chip production. There is also a need for a reliable temperature control device and method for electronic devices. There is a further need for a temperature control apparatus and method for electronic devices that does not take up a large surface area for the electronic device. Also, the temperature detection device does not need to be integrated on the chip,
There is also a need for a temperature control device and method for electronic devices that is removable and does not require contact with the chip. Moreover, there is no need to collect, maintain, or use the power profile of the chip, nor is it necessary to perform such functions in automated test equipment, temperature capture systems, test software, etc. for electronic devices. Controllers and methods are also desired.

[0007] The present invention has been made to avoid, or at least reduce, the effects caused by one or more of the problems set forth above.

SUMMARY OF THE INVENTION According to the present invention, an electronic device temperature controller and method eliminates or reduces problems associated with previously developed electronic device temperature controllers. .

One advantage of the present invention is that there is provided a temperature control device and method for an electronic device that is responsive to the temperature of the electronic device rather than the package. Another advantage of the present invention is that it provides a temperature control apparatus and method for electronic devices that can be conveniently utilized for mass chip production.

[0010] Yet another advantage of the present invention is that a reliable temperature control apparatus and method for electronic devices is provided. Yet another advantage of the present invention is that it provides a temperature control apparatus and method for electronic devices that does not take up a large surface area for the electronic device.

The present invention also provides a temperature control device and method for an electronic device that does not require the temperature detection device to be integrated on the chip, and that does not require the device to be detachably attached to the chip. There is another advantage. Also, there is no need to collect, maintain, or use the power profile of the chip, and it is not necessary to perform such functions with automatic test equipment, temperature capture systems, test software, etc. There are other advantages of the present invention where devices and methods are provided.

Briefly, according to one aspect of the present invention, there is provided a method for calculating a real-time temperature of a device. In this method, the real-time power usage of a device is measured, and the measured real-time power usage of the device is used to determine a value available for the real-time temperature of the device. Power usage is related to the power used by the device via one or more power connections, unlike signal connections.

Briefly, according to another aspect of the present invention, there is provided a method for controlling the temperature of a device in a system including a temperature capture system coupled to the device. In this method, the power consumption of the device is also monitored, and the temperature of the temperature capture system is adjusted based in part on the monitored power consumption of the device, and the device temperature is controlled by the temperature capture system. Power consumption relates to the power supplied to the device by one or more power sources.

Briefly, according to another aspect of the present invention, there is provided a system for controlling a temperature of a device. The system includes a measurement device that measures parameters related to power consumption by the device, a heat exchanger coupled to the device, and a heat controller that determines a set value of the heat exchanger. It is configured. The set value is determined, in part, by utilizing measurement parameters related to power consumption by the device. The thermal controller is connected to the measuring device and operates at the same time. The parameter is other than the temperature of the device, and the power consumption is the power consumed by the device via the power connection unlike the signal connection.

Briefly, according to another aspect of the present invention, there is provided a system for controlling a temperature of a device. The system includes a structure for measuring a parameter related to power consumption by the device and a structure for controlling a temperature of the device based in part on a measurement parameter related to power consumption by the device. The measurement of the parameter relating to the power consumption by the device and the control of the temperature of the device are performed simultaneously. The parameter is other than the temperature of the device, and the power consumption is the power consumed by the device via the power connection unlike the signal connection.

Briefly, according to yet another aspect of the present invention, there is provided a data generation system for use in a semiconductor device under test. This data generation system
It comprises a programmable power supply and a data acquisition device. The programmable power supply supplies power to the semiconductor device under test and also supplies a data signal containing information on the power used by the semiconductor device under test. The data acquisition device acquires data on power used by a semiconductor device under test by receiving a data signal from a programmable electrode supply source.

In brief, according to yet another aspect of the present invention, there is provided a data generation method for use with a semiconductor device under test. In this method, a data signal is continuously supplied from a programmable electrode supply source. The data signal includes real-time information about the power being supplied from the programmable power supply to the semiconductor device under test. In this method, the data signal from the programmable power supply is continuously received by the data acquisition device.

In brief, according to yet another aspect of the present invention, there is provided a temperature control system for use by a semiconductor device during a test. This temperature control system includes a measuring device, a heat exchanger, a heat controller, and a test head. The measuring device measures a parameter relating to power consumption by the semiconductor device under test. The parameter is other than the temperature of the semiconductor device, and the power consumption is the power consumed by the semiconductor device via the power connection line unlike the signal connection line. The heat exchanger is connected to the semiconductor device. The heat controller is adapted to determine a set value for the heat exchanger, such a set value being determined in part by utilizing measurement parameters relating to power consumption by the device. This thermal controller is connected to the measuring device and operates at the same time. The test head holds the semiconductor device during a test. The test head is configured to test the semiconductor device while the semiconductor device is in heat transfer contact with the heat exchanger, and the set value of the heat exchanger is determined by the heat controller.

BEST MODE FOR CARRYING OUT THE INVENTION Detailed Description of Embodiments The above and other aspects of the present invention will be more clearly understood from the description of the embodiments with reference to the accompanying drawings. It will be. The drawings illustrate one embodiment of the present invention. In these figures, the same parts have the same reference numbers.

The pending US patent application Ser. No. 08 / 734,212 to Pelissier, assigned to the present assignee, is incorporated herein and is fully described. 1
Also, co-pending provisional US patent application Ser. No. 60 / 092,715 to Jones et al. (Attorney Docket No. 42811-106) filed Jul. 14, 998 and assigned to the assignee, It is incorporated here and is fully described.

1. Central Theory When a device is tested, the test is performed at a set point.
) Must be performed at a specific temperature. This device, also referred to as a device under test ("DUT"), is typically tested at a number of different set points, with a focus on performance at each set point. The performance of a DUT is often evaluated at the maximum operating frequency f _max at a given set point. DUTs are typically faster at lower temperatures (high f _max ), while slower at higher temperatures (low f _max ). A higher f _max indicates a better performing DUT, and thus a more valuable DUT.

Maintaining a given set point has been extremely difficult.
One of the reasons is the self-heating of the DUT during inspection.
The DUT takes in power at the time of inspection, and thus generates heat. If the DUT heats up during a series of tests without being maintained at the set point, as noted above, the performance of the DUT will decrease. If the temperature was held at the desired low temperature, this would result in a lower performance report of the DUT, as the performance would have been better. The same device could subsequently be sold at a higher price. This price typically rises exponentially with faster devices. It can be seen that this effect is significant for manufacturers who must accept the low reported performance.

The number of devices affected also has an exponential relationship with the temperature rise due to self-heating. As shown in FIG. 8, the distribution of performance for a given number of devices is typically a normal distribution around a certain center frequency. In the rightmost curve in FIG. 8, the center frequency is approximately 450 MHz. In this embodiment, high performance devices is considered to be one having a 480MHz or Higher _{f max.}

If the set point can be maintained, the rightmost curve 480 MH
All devices in the tail to the right of z will be high performance devices. However, if the set point cannot be maintained by self-heating, the curve will shift, resulting in, for example, the leftmost curve. In this embodiment, the actual junction temperature of the device is expected to increase by 20 ° C., which would result in a performance decrease of approximately 4%. Therefore, the distribution of devices in this lot is shifted to the left, so that the center is approximately 432 MHz (4% of 450 = 18). This shifted curve is represented by the leftmost curve. However, high performance devices still need to have an f _max of 480 MHz or higher. Thus, the high performance region of the curve further shifts to the end of the distribution. As is evident from the area under the curve, the number of high performance devices is now exponentially smaller.

This problem will only get worse. The industry trend is towards devices operating at higher frequencies and occupying less space. This is the device
It will consume more power, have more power spikes or transitions, and will be less likely to dissipate the heat they generate.

Many semiconductors utilize complementary metal oxide semiconductor (“CMOS”) technology. C
One of the features of MOS is that it draws large power spikes when switching states. Further, the faster a CMOS device is operated, the more typically it will switch faster and more often. this is,
It will require more power and will result in large and sharp changes in simultaneous power consumption. Thus, more heat will be generated.

This situation is exacerbated by the reduced device size and reduced heat capacity. Therefore, the "space" for dispersing and diffusing the heat of the device
(space) ". The end result will be greater than the variation in DUT temperature due to self-heating of the device, which will also underreport DUT performance.

Convection systems have proven ineffective as their improvements exist. FIG. 5 shows the performance of a forced air system analyzed with respect to the junction temperature of the device and the power drawn by the device. As the power generated by the device increases, the deviation between the required set point temperature and the junction temperature increases. As can be seen, the deviation exceeds 20 ° C. at some transition temperatures.

Although having potential advantages over convection systems, conduction systems have also proven ineffective. FIG. 6 shows the performance of the simple conduction of the flip chip device. As the power from the device increases, the temperature increases by about 60 ° C. above the predetermined temperature.

What is really needed is the ability to quickly detect the temperature of the DUT, respond quickly to the DUT temperature, and effectively change the DUT temperature.

As described in this specification, the disclosed invention makes it possible to approach these two requirements. This provides a mechanism to quickly measure the DUT temperature using the newly developed power tracking feedback method. This also allows DU
Provide a heat source / heat sink (generally referred to as a heat exchanger "Hx") that can quickly respond to the self-heating of T and effectively compensate. FIG. 7 shows the results of reducing the DUT temperature overshoot to some extent effectively by quickly responding to the measured DUT temperature. This response is shown by the heat exchanger reflecting the temperature in an image symmetrical to the power to the DUT.

Also, the power tracking feedback method used to measure the DUT temperature has the advantage of working in real time, so that there is no need to change the thermal conditions and to limit the flexibility of the test program. The test sequence can be optimized without using any thermal conditions. The key feature is the DUT
The development and use of a simplified relational equation to derive temperature.

Also, measurements and calculations of the total power used in the DUT are required, but in light of the present disclosure, those skilled in the art will understand that this is not necessary. Obviously some of the power has been estimated and may have been ignored. This may result, for example, but not by way of limitation, in that all of the device's power fluctuations are isolated from a particular voltage or power supply, or that a particular power supply provides somewhat less power to the device.

In addition, the power supply monitor is a convenient way to monitor power usage because it is separate from the DUT and can sense momentary power fluctuations before actual self-heating occurs. These power fluctuations may increase or decrease, and may increase or decrease the self-heating. However, those skilled in the art will appreciate that there are other ways to monitor power, current and / or voltage.

[0035] 2. Power Tracking System FIG. 1A shows an embodiment of the present invention. One or more power supplies 15 supplying power to a test or operating electronic device (not shown) by the monitor circuit 10
Is monitoring the power usage. When there are a plurality of power supplies 15, the monitor circuit 10 sums up the total power consumption. The electrical circuit 16 connects the monitor circuit 10 to each power supply 15. The electrical contact 16 provides the monitor circuit 10 with the value of the power used by the electronic device as a voltage image of the current flowing through the electronic device and a voltage level at which the electronic device is operating or being tested. Electrical contacts 16 are utilized to power automated test equipment used to test electronic devices. The monitor circuit 10 sends the used power signal 20 (voltage indication of the used power value) to the heat control circuit 25.

The power control circuit 25 uses a power signal based on a signal indicating the set temperature or the set temperature 30 of the given semiconductor chip and a signal indicating the surface temperature of the forced system or the surface temperature 32 of the forced system. 20 is converted into a temperature control signal 35. The temperature control signal 35 is sent from the heat control circuit 25 to the heat exchanger temperature control 40. The heat exchanger temperature control 40 includes a heat exchanger power supply (not shown) with a power amplifier and adjusts the output current of the heat exchanger power supply to control the heat exchanger for the electronic device under test or operation. 45 is controlled. As a result, the temperature of the heat exchanger is the surface temperature 32 of the forcing system.

As shown in FIG. 1B, the thermal control circuit 25 is on a thermal control board 27. Further, the thermal control board 27 is provided with an accurate first constant current source 28 and an accurate second constant current source 29 between other components. The first constant current source allows the heat control board 27 to send a variable resistance device (“RT
D "). The RTD outputs a voltage corresponding to the forced system surface temperature 32 in response to the forced system surface temperature. The voltage 33 corresponding to the forced system surface temperature is fed back to the thermal control circuit 25. Placing the precise first constant current source 28 outside the heat exchanger 45 has the advantage that the heat exchanger can be easily replaced.

A constant current can be sent to the DUT by the accurate second constant current source 29. Further, the heat exchanger 45 is described in a section below this temperature control unit.

The present invention is a co-pending US patent application Ser. S. S. N.
(US Serial Number) 60 / 092,715.

In view of the present invention and the contained description, the functions of the entire system may be implemented in various ways, as will be readily appreciated by those skilled in the relevant art. Although the monitor circuit and thermal control circuit are described in electrical circuits, they are other forms that can perform these functions by other means, such as generating signals indicating current, voltage, temperature, and power. You may.

According to one aspect of the invention, the functions described herein may be implemented by hardware, software, and / or a combination of both. Software implementations are not limited to high-level programming languages such as C ++, but are written in appropriate languages, including medium-level languages, low-level languages, assembly languages, and application-specific and device-specific languages. Is also good. This software can be run on a general purpose computer equipped with 486, Pentium ™, special purpose hardware, or suitable devices.

In addition, while using hardware components separated by logic circuits, the required logic may also be implemented by special purpose integrated circuits (“ASICs”) or other devices. Good. As the technique, an analog circuit, a digital circuit, or a combination of both may be used. The system may also include connectors, cables, and other hardware components known to those skilled in the art. Further, according to the present invention, at least a part of this function is performed by a computer-readable medium (such as a magnetic recording medium, a magneto-optical recording medium, or an optical recording medium) used for programming an information processing apparatus. (Also referred to as program products). This function may also be implemented on a computer-readable medium or on a transmitted carrier used to carry information or functions.
nsmitted waveforms) may be stored in a computer program product.

Further, it will be apparent to those skilled in the art from the present disclosure that the present invention can be applied to various technical fields, different applications, industries, and various modes of technology. The present invention can be used, without limitation, in any power supply system where temperature must be monitored or temperature controlled. This includes, without limitation, many different processes and applications related to semiconductor manufacturing, testing, and operation.

In addition, in a preferred embodiment, the power supplied to the DUT from the power supply circuit is calculated or monitored. This power is supplied to one or more power lines in the DUT.
), typically on a power plate or some kind of grid on the DUT. This is different from the intrinsic power of any signal. Obviously, the signal circuits on the device are designed to receive a specific power of the signal (eg, a clock signal). However, the power monitored by the preferred embodiment is the power provided from the power supply circuit to the power supply line and not the signal-specific power (although the signal-specific power will also be provided to the signal line). . A power supply circuit as used above refers to a standard industrial device that can be powered at a particular voltage to operate the device. However, it will be apparent that the techniques of the present invention can be applied to any signal, including, but not limited to, power signals, clock signals, and data signals. These techniques can also be applied to non-standard power supply circuits.

[0045] 3. Monitoring Circuit Total Function FIG. 2 is a block diagram showing a calculation function of the monitoring circuit 10 according to the embodiment of the present invention. Here, the electronic device is powered by a plurality of power devices 15. Each of the electronic circuits 16 (not shown in FIG. 2; shown in FIG. 1A) is sent from a corresponding power supply device 15 (not shown in FIG. 2; shown in FIG. 1A) to the monitoring circuit 10.
It sends a current 210 and a voltage signal 215. Each of the current and voltage signals 210, 215 enters a low pass filter 225 via a respective first amplifier 220.
The first amplifier 220 amplifies the current and voltage signals 210, 215. The low-pass filter 225 removes broadband noise and high-frequency components of the signal. The current and voltage signals 210 and 215 are voltages representing respective values of the current or the voltage.

The thermal component of the system responds slower (eg, milliseconds) than the response (eg, nanoseconds) of the power supplied to the electronic device under test. Therefore, the high frequency components of the current and voltage signals 210, 215 do not add any value. When the high frequency components of the current and voltage signals 210 and 215 are removed, the current and voltage signals 2 and 215 are removed.
The bandwidth of 10,215 matches the remaining bandwidth of the control circuit, which simplifies the work of stabilizing temperature control.

The current and voltage signals 210, 215 for a particular power supply circuit are then
Enters the multiplication circuit 230. The first multiplication circuit 230 includes a current and voltage signal 210
, 215 to calculate the power usage for that particular power supply circuit.

For all power supply circuits, the monitoring circuit 10 calculates power usage from the current and voltage signals 210, 215 using the following equations. P = I * V (Equation 1) Here, P is power consumption (watts), I is a current signal (ampere), and V is a voltage signal (volt).

When the power supply circuit 15 provides a voltage image of the current flowing through the electronic device, a scaling factor that describes the volt-ampere relationship of the voltage image signal is required. Once the electronic device has been tested, the scaling factor is derived from the characteristics of the power supply circuit and sent to the automated test equipment used to test the electronic device. Automated test equipment also powers the electronic device during operation or under test. For example, the scaling factor of Schlumberger's VHCDPS is 1.0
Whereas, the scaling factor of Schlumberger's HCDPS is 0.87. The scaling factor is made available to the monitoring circuit so that the signal in volts can be converted to a corresponding current value in amps.

The scaling factor can also be determined empirically by the following formula: That is, scaling factor = volts of signal / ampere measured.

The scaling factor is determined by simultaneously measuring the actual current and the signal voltage and dividing the voltage by the measured amperage. In some embodiments, it is also determined by setting one or more specific current outputs and measuring the signal voltage.

The output from all first multiplying circuits 230 enters a single summing circuit 235.
Summing circuit 235 sums the power usage from all power supplies and outputs power usage signal 20. The power usage signal 20 is a voltage representing the value of the usage, passes through the second amplifier 240 before being output from the monitoring circuit, and enters the heat control circuit as the power usage signal 20.

[0053] 4. Thermal Control Circuit FIG. 3 shows a block diagram of the thermal control circuit of the present invention. The temperature of the electronic device under test or in operation can be obtained using the following equation: Chip temperature _{= K theta * P ed + T} fss ( Equation 2)

Here, the chip temperature (° C.) represents the temperature of the chip resulting from the power loss.

K _theta is a temperature forcing system
And the constant (° C./watt) obtained from the thermal resistance of the medium between the electronic device and the heat exchanger. Here, the medium refers to a medium in which a heat spreader, a lid, or another device is mounted on the top of the device.

P _ed (Watts) is the total power usage represented by the power usage signal 20 obtained from the monitoring circuit 10 (see FIG. 1A).

T _fss (° C.) is a system surface forcing temperature measured by a temperature sensor embedded in the surface of the temperature control system.
re) and the absolute temperature of the medium in contact with the chip.

K _theta also comes from the overall efficiency of the thermal control system when in contact with the DUT. For example, at a set temperature well above ambient, the DUT loses proportionally more heat to its surroundings. And the thermal control system works harder,
The DUT temperature must be increased rather than reduced. From the perspective of a thermal control system that responds to self heating of the DUT, the overall effect is the same as lower thermal resistance between the DUT and the heat exchanger operating at ambient set points. Similarly, at a set temperature well below the ambient temperature, the DUT gets heat from the ambient and the thermal control system
The temperature must be reduced rather than increased. From the perspective of a thermal control system that responds to self heating of the DUT, the overall effect is the same as higher thermal resistance between the DUT and the heat exchanger operating at ambient set points. In both cases, by adjusting the K _{th eta,} during power excursion (power excursion), it can reflect the effect of heat transfer to the environment surrounding the DUT.

K _theta can be considered the effective or well tuned thermal resistance of the medium. The thermal resistance of different media can be found in standard chemistry reference books (eg, CRC
Handbook of Chemistry and Physics, 77th Edition; David R. Lide, Editor-i
As described in n-Chief), factors such as ambient humidity, pressure, and temperature affect the actual thermal resistance. Thermal resistance is also affected by the physical state of the test. To determine K _theta , a calibration process can be used to adjust the value of the expected thermal resistance of the media and see if the results have improved. Another advantage of the calibration process is that it automatically accounts for the "efficient factor" of heat transfer from the DUT to the temperature control system as a function of set point temperature.

As described above, K _theta has the advantage of incorporating the effects of various variables into one term. In a preferred embodiment, K _theta is only needed to optimize a given application, or type of DUT, and can be used to test many different devices of the same type. In addition, the practical effect of K _theta is:
In reflecting the power consumption of the monitored device to the temperature of the temperature forcing system (see FIG. 7), K _theta can amplify or reduce the relative degree of reflection.

In the heat adding circuit 330, the heat control signal 35 is determined using the following equation. V _tcs = d (V _sp − ((V _k−theta * V _Ped ) + (V _fsst −V _IRO ) / V _alpha ))
/ Dt (Equation 3) where V _tcs is a temperature control signal. _Vsp is a set point temperature voltage 375, a voltage representing the set point temperature for the electronic device. V _k-theta is a voltage 315 representing the K _theta value. The K _theta value is input to a digital-to-analog converter. The digital-to-analog converter produces a voltage corresponding to an input value. V _Ped is the total power consumption signal 20 obtained from the monitor circuit 10 (see FIG. 1A).
Which represents the wattage consumed by the DUT. V _fsst is a _forcing system (fo) generated by digital-analog conversion.
surface temperature voltage 32 of the forcing system. V _IRO 345 is the voltage generated by the digital-to-analog conversion and is indicated by a variable resistance device in the heat exchanger at 0 degrees Celsius to a constant current from the first constant current source 28 in the thermal control board 27. Voltage equal to the value obtained by multiplying the resistance. V _alpha 360 is the voltage generated by the digital-to-analog conversion and represents the slope of the curve for the variable resistance device in a temperature to resistance heat exchanger.

Referring to FIG. 3, the power consumption signal 20 from the monitor circuit 10 (not shown in FIG. 3) passes through the third amplifier 310 and is input to the heat control circuit 25. afterwards,
The power usage signal 20 is input to a second multiplying circuit 320, where it is multiplied by V _k-theta to generate a first correction signal. The modified power usage signal is then input to a fourth amplifier 325 and further to a heat summing circuit 330. The voltage representing the _forcing system surface temperature V _fsst 32 is also the fifth amplifier 335
And input to the heat control circuit 25. Thereafter, V _fsst 32 is subtracted from the subtraction circuit 340.
_Where V _IRO is subtracted from V _fsst 32 to obtain a calibration V _fsst . The calibration V _fsst passes through a sixth amplifier 350 and enters a division circuit 355, where the calibration V _fsst is divided by V _alpha . The result representing ((V _fsst -V _IRO ) / V _{alp ha} ) passes through the fifth amplifier 365 and then to the heat summing circuit 33.
Enter 0. Thermal summing circuit 330 adds the result to the modified power usage signal to produce a sum. The sum is input to a difference circuit (that is, a subtraction circuit) 375. And there, the sum is subtracted from the setpoint temperature voltage 370 to generate the final result signal. This signal represents an instantaneous temperature error.

The result signal is input to the differentiating circuit 380. The differentiating circuit obtains the circuit derivative of the final result with respect to time and smoothes it. Before leaving the thermal control circuit as the temperature control signal V _tcs 35, the differentiated signal is _supplied to the second amplifier 39.
Amplified by 0.

The differentiating circuit 380 corresponds to the overall control section of the thermal control circuit 25. This is the point at which the response time of the circuit to the level change of the instantaneous signal is determined. Control circuit 25 is characterized by differentiating circuit 380, but may be described as a PI-style control loop. This is because the control circuit 25 has a proportional and an integral gain stage.

In other embodiments, true PID control may be used, for example, by designing an ordering system or by using a standard off-the-shelf servo controller. Such a system adds capabilities such as continuous ramping, s-curve profiling, servo tuning for minimal positive and negative overshoots, and improved closed-loop control stability. Depending on the particular controller used, the PID controller needs to convert the temperature and power signals into some kind of thermal state signal and feed it back to a commercial servo motor controller. Some controllers also need to perform the same conversion in the final processing. As these examples show, the required control functions can be performed by analog and / or digital circuits.

[0066] 5. Example of Graph FIG. 4 is a graph showing an example of the power resulting from the temperature control of the present invention. This graph shows that the temperature of the electronic device 410 can be kept constant while having a relatively wide amplitude in the amount of power 420 used by the electronic device.

[0067] 6. Test Control and Temperature Determination As described in the above disclosure, the control system maintains the DUT temperature at specified set points within predetermined tolerances. The control system is therefore DUT
You need to have information about the temperature. Temperature foll
Some control systems, such as owing, require repeated DUT temperature information. Other control systems, such as power tracking, that control derivation from set points do not require repetitive DUT temperature information, but only need to know when the temperature maintenance process begins.

In one embodiment, the power tracking process is started after the DUT reaches the set point temperature. This information may be determined indirectly, for example, after the soak timer has expired. It may also be determined directly, for example by monitoring the thermal structure. Thermal structures are used to provide initial DUT temperature information, which can also be monitored during testing to make sure they are properly calibrated. In one embodiment of the present invention, before starting the power tracking temperature control method, the thermal structure is monitored to determine an initial DUT temperature.

Preferably, a characterization and validation process is performed for power tracking temperature control of a particular type of DUT. This process uses die temperature information. If a properly related sample set is obtained using true die temperature information during the calibration process, no temperature sensing device in the die is needed during high volume manufacturing and testing .

Embodiments of the present invention may have a separate control section to control temperature and control the order of testing. Referring to FIG. 9, a general high-level block diagram illustrating a test control system 130 and a temperature control system 132 is shown. Both of these systems 130, 132 are connected to and can communicate with the DUT 134. This disclosure mainly relates to the description of the temperature control system 132. The test control system 130 uses the DU
Run the appropriate test on the DUT 134 while controlling the T temperature.

The two control systems 130, 132 need to communicate or coordinate their work. Temperature control system 132 or test control system 13
0 can monitor the thermal structure. In one embodiment of the present invention, test control system 130 monitors the thermal structure of DUT 134 and sends a signal, such as a scaled voltage, to temperature control system 132, which represents DUT temperature. In FIG. 9, the communication path of such an embodiment is shown using a dashed line between the test control system 130 and the temperature control system 132. The form of the control systems and their architecture can be changed arbitrarily. In one embodiment, the two control systems 130, 132 are separate and have no direct communication means. Both control means 130, 132 provide the necessary DUT to adjust their work.
The DUT 134 is monitored to obtain temperature information. In another embodiment, 2
The two control systems 130, 132 are fully integrated.

[0072] 7. Data Acquisition The information used by the power tracking system described above is the power draw of the DUT.
draw). In one described embodiment, this information is:
FIG. 1B is an image of a scaled voltage of the current and voltage signals as represented in FIG. 1A. These signals are supplied by the power supply 15 of FIG. 1A. This information can also be made available for other purposes using a data generation system. Such data generation systems display power information, eg, using plots or graphs, to specify a small likelihood, make calculations based on various applications, monitor performance or efficiency, and then convert the data. Store. Various data generation systems are shown in FIGS. 10A-10C.

Referring to FIG. 10A, a power supply device 15 for supplying power to the DUT 134 is shown. The power supply is preferably a programmable power supply. Also shown is a data acquisition card 136, more generally called a data acquisition device. The data acquisition card 136 receives power information, such as a scaled voltage image of the current and voltage signals from the power supply 15. In one embodiment, the data acquisition card 136 may receive the same information as the monitor circuit 10 of FIG. 1A receives. The signal (in FIG. 1A, the power supply 15 is connected to the monitor circuit 10 via the connector 16) may be, but is not limited to, a method of dividing the line or a data acquisition card 136. The data can be supplied to the data acquisition card 136 by various methods known in the art, including a method of daisy chaining to the monitor circuit 10.

Referring to FIG. 10C, a monitoring circuit 10 is preferably located between the power supply 15 and the data collection card 136. Next, the data collection card 136 receives the power usage signal 20 from the monitor circuit 10. In this embodiment, instead of having to perform either calculations on its own or rely on another device or processor to perform them, the data collection card 136 instead: Request the power usage signal 20 directly. The various power usage signals 20 measured in the voltage image of the power are shown in FIG. 4 (chip power), FIG. 5 (actual power; Actual Pwr), and FIG.
A power monitor (Power Mon) and FIG. 7 (power to the DUT) are shown. In these figures, multiple signals were requested at multiple data collection cards 136.

The data collection card 136 may utilize analog and / or digital circuits. Preferably, data acquisition card 136 includes an analog-to-digital converter with multiple channels. One embodiment is for National Instruments for the data collection card 136.
An off-the-shelf board of model number PCI-6031E manufactured by s) is used.

The data collection card 136 may also perform various control functions, such as setting the sampling rate and other parameters. However, in a preferred embodiment, the data collection card 136 sends data to another controller. In each of FIGS. 10B and 10C, a general-purpose personal computer (“PC”) 138 that functions as a controller and sets various values for the data collection card 136 is shown. In one embodiment, the PC
138 receives the digitized data from data collection card 136, and PC 138 can then use the data to perform various services and functions. In one embodiment, the data is, for example, a hard disk, floppy disk, optical disk, ZIP disk, or Bernoulli drive (Bernui drive).
oulli drive). Also,
The data can be transmitted, displayed on a display device such as a computer screen, or processed. Still other embodiments may include additional processors or devices that utilize data, including analog devices.

Preferably, PC 138 includes a Pentium processor and a Windows NT operating system. A variety of communication cards and protocols can be used between the PC 138 and the data collection card 136, including, but not limited to, Universal Asynchronous Transceiver (UART), Universal Transceiver (URT), and RS-232 standards. .

In a preferred embodiment, the data collection card 136 also includes a variety of other information including, but not limited to, DUT temperature information, heat exchanger power information, coolant flow rates, and fluid inlet and outlet temperatures. Request.

[0081] 8. Temperature Control Unit FIG. 11 shows a schematic diagram of a system 110 according to the present invention. As shown, a user operates system 110 at operator interface panel 112. The operator interface panel 112 functions as an interface to the system controller 114. System controller 1
14 is provided in a heat control chassis 116 and controls a heat exchanger 120 and a liquid cooling and recirculation system 122.

The heat exchanger 120 preferably includes a heater and a heat sink. However, other heat exchangers are possible. The heat sink preferably includes a chamber from which liquid is drawn. Other heat sinks are also possible. If the thermal conductivity is sufficiently high, a heat sink or heat sink system that does not use liquid can be realized. In particular, solid heat sinks, such as Peltier devices, are known in the art that use electrical signals through materials to control temperature and temperature gradients. Also, the heat sink is equivalently referred to as a heat transfer unit, thereby focusing attention on the fact that the heat sink may also function as a heat source.

The heater of heat exchanger 120 preferably has a three-layer co-fired aluminum nitride heater substrate with heater traces between the first two layers and an RTD trace between the last two layers It is. The heater trace performs heating and the RT
The D trace provides temperature information. The two traces are essentially in the same thermal location due to the thermal conductivity of the aluminum nitride layer, while being electrically isolated.

When discussing the temperature of a heater, or heat sink or other device, it should be understood that the temperature of a single point on the device is being discussed. This follows from the fact that a typical heater, or heat sink or other device, has a temperature gradient across its surface. In the case of a heater, the presence of the gradient is due, in part, to the fact that the heating element usually occupies only a portion of the heater.

The liquid cooling and recirculation system 122 supplies liquid via the boom arm 118 to the heat exchanger 120, in particular to the heat sink. Also, the boom arm 118
Transmits a control signal from the system controller 114 to the heater.

The test head 121 is adapted to be located below the heat exchanger 120. The test head 121 is preferably a device under test (“DU”) such as a chip.
T "). A test of the DUT is then performed via the test head 121, and the temperature of the DUT may have been adjusted during the test. During the temperature adjustment, preferably, the DUT is in conductive contact with the heat exchanger.

9. Variations and Benefits Embodiments of the present invention include time delay or filtering on the power usage signal 20, or otherwise include adjusting the effect of power consumption on time. This may be used, for example, to offset the effects of a large ceramic substrate or other large thermal heat sink, or may be used to average the effects of high frequency power signals without removing them. . As testers and microprocessors become faster, time delays or filters become more important.

Other embodiments also compensate for large bypass capacitance on the tester interface board or the DUT itself. The bypass capacitance is used to provide an instantaneous charge that the power supply cannot replenish fast enough due to inductive loads or physical distances. As the bypass capacitance increases, the time between the power signal and DUT self-heating decreases.

While the embodiments described above use analog design techniques, digital signal processors and software can be used in alternative embodiments of the present invention to operate digitally.

Advantages of the present invention include providing a temperature control device and method for an electronic device that is responsive to the temperature of the electronic device rather than the package. Another advantage of the present invention is to provide a temperature control apparatus and method for electronic devices that can be used conventionally to produce large volume chips. Another advantage of the present invention is to provide a reliable temperature control device and method for electronic devices.

Another advantage of the present invention is that it provides a temperature control device and method for an electronic device in which the system requires a surface area for conduction, but does not require a large surface area of the electronic device for sensing device temperature. To provide. Another advantage of the present invention is that it eliminates the need for a temperature sensing device to be integrated into the chip or temporarily connected to the chip.

Yet another advantage is that the present invention also eliminates the need to collect, maintain and apply the use of chip power profiles, as well as automated test equipment, temperature forcing systems (temperature It eliminates the need for forcing systems and test software for the ability to collect and apply chip power overviews.

The principles, preferred embodiments and modes of operation of the present invention have been described in the preceding part of this specification. The invention is not to be construed as limited to the specific forms disclosed, as these are to be understood as illustrative rather than restrictive. In addition, variations and modifications may be made by those having ordinary skill in the art without departing from the spirit and scope of the invention.

[Brief description of the drawings]

FIG. 1A is a block diagram illustrating one embodiment of the present invention.

FIG. 1B is a block diagram illustrating some basic elements in a thermal control board according to one embodiment of the present invention.

FIG. 2 is a block diagram illustrating a power calculation and monitoring circuit according to one embodiment of the present invention.

FIG. 3 is a block diagram showing a heat control circuit according to one embodiment of the present invention.

FIG. 4 is a graph showing a result of power tracking temperature control according to one embodiment of the present invention.

FIG. 5 includes a graph showing the performance of a forced air system.

FIG. 6 includes a graph showing the performance of a simple conduction system.

FIG. 7 includes a graph showing the performance of power tracking temperature control according to one embodiment of the present invention.

FIG. 8 is a diagram including graphs showing the effect of controlling self-heating and the case of not controlling self-heating in the performance distribution of device lots in comparison.

FIG. 9 is a high-level block diagram illustrating interrelationships between test control systems, temperature control systems, and devices.

FIG. 10A is a high-level block diagram illustrating the acquisition and use of device power information.

FIG. 10B is a high-level block diagram illustrating the acquisition and use of device power information.

FIG. 10C is a high-level block diagram illustrating the acquisition and use of device power information.

FIG. 11 is a diagram showing a thermal control unit.

──────────────────────────────────────────────────続 き Continuation of front page (81) Designated country EP (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE ), OA (BF, BJ, CF, CG, CI, CM, GA, GN, GW, ML, MR, NE, SN, TD, TG), AP (GH, GM, KE, LS, MW, SD, SL, SZ, UG, ZW), EA (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM), AE, AL, AM, AT, AU, AZ, BA, BB, BG, BR , BY, CA, CH, CN, CU, CZ, DE, DK, EE, ES, FI, GB, GD, GE, HR, HU, ID, IL, IN, IS, JP, KE , KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MD, MG, MK, MN, MW, MX, NO, NZ, PL, PT, RO, RU, SD, SE, SG, SI, SK, SL, TJ, TM, TR, TT, UA, UG, US, UZ, VN, YU, ZA, ZW (72) Jonathan E. Turner United States 43081 Westerville, Ohio, Green Meadows Drive North 8377 (72) Inventor Mark EF Marinoski United States 43081 Greens Meadows Drive North 8377 Westerville, Ohio F-term (reference) 2G003 AA00 AB01 AB16 AC03 AD06 AF02 AH01 AH02 AH05 AH08 2G132 AB20 AC03 AD01 AD18 AE14 AE16 AE18 AE23 AE27 AG08 AL00 AL21 5H323 AA38 BB05 CA09 DA02 DA03 GG04 HH02 JJ03 JJ04 KK05 NN03 NN15 PP02 SS05

Claims (30)

[Claims] 1. A method for controlling the temperature of an apparatus, comprising: measuring a parameter related to an amount of power consumed by the apparatus via a power connection line, unlike a signal connection line, as a parameter other than the device temperature. And a step of using a measurement parameter for controlling the temperature of the apparatus, wherein the measurement of the parameter and the control of the temperature are performed simultaneously. 2. The method of claim 1, wherein measuring a parameter related to power consumption of the device comprises monitoring at least a portion of power usage of the device. 3. The method of claim 1, wherein measuring a parameter related to power consumption of the device includes monitoring a power supply that supplies power to the device, and determining a voltage and current from the power supply. Measuring the temperature. 4. The method of claim 1, wherein measuring a parameter related to power consumption of the device comprises monitoring changes in instantaneous power consumption of the device. 5. The method of claim 2, wherein monitoring at least a portion of the power usage of the device comprises monitoring a total power usage of the device, wherein the monitored total power usage is reduced. A temperature control method used for controlling the temperature of an apparatus. 6. The method of claim 1, wherein measuring a parameter related to power consumption of the device generates a signal representative of a first current usage of the device; A temperature control comprising: generating a corresponding signal representing a first voltage; multiplying the signal representing the first current usage by the signal representing the first voltage to generate a signal representing a first power usage of the device. Method. 7. The method of claim 6, wherein measuring a parameter related to power consumption of the device generates a signal representative of a second current usage of the device, Generating a corresponding signal representing a second voltage; multiplying the signal representing the second current usage by the signal representing the second voltage to generate a signal representing a second power usage of the device; A temperature control method, further comprising adding the signal representing usage to the signal representing second power usage of the device to generate a signal representing total power usage of the device. 8. The method of claim 1, wherein controlling the temperature of the device based on a measured parameter related to power consumption of the device comprises utilizing a temperature capture system, at least partially by the device. A temperature control method comprising controlling settings of the temperature capture system based on a measurement parameter relating to power consumption. 9. The method of claim 8, wherein controlling the setting of the temperature scavenging system comprises substantially determining a temperature of the device using a first equation below. Equipment temperature = K _theta · _Ped + T _fs 10. The method according to claim 9, wherein a temperature capture system is set.
Controls to generate a signal that is used to control the temperature capture system. _tes Is used as a signal used to control the temperature capture system.
A temperature control method comprising: V_tes = d (V_sp -((V_k-theta・ V_Ped) + (V_fsst -V_IRO) / V_alpha)) /
d_t 11. The method of claim 6, wherein measuring a parameter related to power consumption by the device comprises: processing a signal representative of a first current usage of the device; and the first current usage of the device. A temperature control method comprising processing a signal representing a first voltage corresponding to a quantity, wherein both signals are processed before being multiplied together. 12. The temperature control method according to claim 8, wherein the control of the setting of the temperature capturing system uses an analog circuit. 13. The temperature control method according to claim 8, wherein the control of the setting of the temperature capture system includes PID control. 14. A method for calculating a real-time temperature of a device, the method comprising: measuring real-time power usage by the device via one or more power connections, unlike a signal connection; A calculation method comprising using the measured real-time power usage of the device to determine a value available for the real-time temperature of the device. 15. The method of claim 14, wherein measuring the real-time power usage of the device comprises measuring the total power usage. 16. A method for controlling the temperature of a device in a system including a temperature capture system coupled to the device, the method comprising: determining an amount of power consumed by the device by one or more power sources. A temperature control method comprising: monitoring and adjusting a temperature of a temperature capture system based in part on power consumption of a monitored device, and controlling the device temperature with the temperature capture system. 17. The method of claim 16, wherein monitoring the power consumption of the device comprises monitoring the total power consumption of the device. 18. The method of claim 16, wherein adjusting the temperature of the temperature capture system comprises reflecting the monitored power consumption of the device at the temperature of the temperature capture system. 19. A system for controlling the temperature of a device, comprising: a measuring device for measuring a parameter relating to the amount of power consumed by the device via a power connection line unlike the signal connection line; and a system coupled to the device. A heat exchanger that is configured to determine a setting of the heat exchanger, which is determined, in part, by using measurement parameters related to power consumption by the device, the heat exchanger being coupled to the measurement device. And a thermal controller operating simultaneously with the temperature control system. 20. The temperature control system according to claim 19, wherein the measuring device for measuring a parameter relating to power consumption by the device comprises a monitor for monitoring the power consumption of the device. 21. The temperature control system according to claim 20, wherein the monitor monitors the total power usage, and the parameter related to the power consumption by the device is the total power usage. 22. The apparatus of claim 19, wherein the measuring device monitors at least one current measuring device for monitoring current supplied to the device from one or more power supplies; At least one voltage measuring device that monitors a voltage supplied to the device from the power supply source, and the monitored current and voltage connected to the at least one current measuring device and the at least one voltage measuring device. And a monitoring circuit that outputs a power usage signal from the above. The thermal controller that determines the setting of the heat exchanger uses the output power usage signal as Ped to predict the temperature of the device. A temperature control system consisting of a thermal control circuit using the following equation. Equipment temperature = K _theta · _Ped + T _fs 23. A system for controlling the temperature of a device, comprising: means for measuring a parameter other than the temperature of the device, related to the amount of power consumed by the device via the power connection unlike the signal connection; Means for controlling the temperature of the device based in part on the measurement parameter relating to the power consumption by the device, the temperature comprising the simultaneous measurement of the parameter relating to the power consumption by the device and the control of the temperature of the device. Control system. 24. A data generation system used for a semiconductor device under test, which supplies power to the semiconductor device under test and includes information on the power used by the semiconductor device under test. A programmable power supply that supplies a data signal, and is connected to the programmable power supply, and receives a data signal from the programmable electrode supply to convert data about the power used by the semiconductor device under test. A data generation system comprising a data acquisition device to acquire. 25. The monitoring circuit according to claim 24, further comprising a monitoring circuit interposed between the programmable power supply and the data acquisition device, wherein a data signal from the programmable power supply is received by the monitoring circuit. A data generation system, wherein a power usage signal is supplied to the data acquisition device from a monitoring circuit, and the device under test is an integrated circuit. 26. The computer-readable medium of claim 24, further comprising a computer having a digital storage medium and a display device, the computer being communicably connected to the data acquisition device, wherein the computer is connected to the data acquisition device. A data generation system that receives a power usage signal, stores information from the digital power usage signal in a digital storage medium, and causes the display device to display information from the digital power usage signal. 27. A method for generating data for use in a semiconductor device under test, the method comprising: providing a data signal including real-time information on power supplied from a programmable power supply to the semiconductor device under test. A data generation method comprising continuously receiving data from a programmable power supply source by a data acquisition device. 28. The method according to claim 27, wherein the power utilization signal is an analog signal, the method comprising processing a continuously received data signal prior to the data signal being received by the data acquisition device. Generating a power signal representing the power used by the semiconductor device under test, sampling the power signal with a data acquisition device, and supplying the sampled power signal from the data acquisition device to a computer. Data generation method. 29. A temperature control system used by a semiconductor device during a test, wherein the temperature of the semiconductor device relates to the amount of power consumed by the semiconductor device under test via a power connection line unlike a signal connection line. Measurement equipment for measuring other parameters, heat exchangers adapted to be connected to semiconductor devices, and heat exchanger settings determined in part by using measurement parameters relating to power consumption by the equipment A thermal controller, which is adapted to determine a value and is connected to the measuring device and operates simultaneously, and the semiconductor device is tested while the semiconductor device is in heat transfer contact with the heat exchanger. And a test head for holding the semiconductor device during the test so that the set value of the heat exchanger is determined by the heat controller. 30. The heat exchanger of claim 29, wherein the heat exchanger maintains the semiconductor device at or near a first temperature during a first test of the semiconductor device,
A temperature control system, wherein the heat controller controls the heat exchanger to maintain at or near a second temperature during a second test of the semiconductor device.