JP2002511152A - Thin-film optical path adjusting device and method of manufacturing the same - Google Patents

Abstract

(57) [Summary] A thin-film optical path adjusting device and a manufacturing method thereof are disclosed. The apparatus includes a substrate having electrical wiring and connection terminals, an actuator formed on the substrate, and a reflection member formed on the actuator. The actuator includes a plurality of actuating units that are driven in opposite directions. Each actuating section has a lower electrode, a deformation layer, an upper electrode, and a via contact. The upper electrode and the lower electrode of the actuating section are connected to each other at an intersection, thereby generating a reverse electric field. Therefore, the reflection member formed on the actuator has a large driving angle. Therefore, the light efficiency of the light reflected by the reflecting member can be increased, and the contrast of the image projected on the screen can be improved.

Description

DETAILED DESCRIPTION OF THE INVENTION                    Thin-film optical path adjusting device and method of manufacturing the sameBackground of the Invention Field of the invention   The present invention relates to a thin-film type optical path adjusting device and a method for manufacturing the same, and Have a plurality of actuators that drive adjacent actuators in opposite directions. Actuator having an actuator including a tuting section The tilting angle of the reflector mounted on top of the reflector can be increased The present invention relates to a thin-film optical path adjusting device and a method of manufacturing the same.Conventional technology   Generally, optical path adjustment devices that can form an image by adjusting the light flux are roughly classified into two types. Is done. One type is a direct-view image display device, such as a CRT (Cathode Ray Tube). Another type is a projection type image display device, and a liquid crystal display device (Liquid Crysta l Display: LCD), Deformable Mirror Device (DMD), Actuated Mirro (AMA) r Arrays) corresponds to this. Although the CRT device has excellent image quality, Larger devices increase the weight and volume of the equipment and increase its manufacturing costs There is a problem.   In contrast, liquid crystal displays (LCDs) have a simple optical structure and can be made thin, and their weight is low. There is an advantage that the volume and volume can be reduced. However, the liquid crystal display (LCD) Depending on the polarization of the incident light beam, the efficiency is reduced to have a light efficiency of 1-2%. Also, there is a problem that the response speed of the liquid crystal material is slow and the inside is easily overheated.   Therefore, in order to solve the above problem, an image display device such as DMD or AMA is required. It has been developed. At present, AMA equipment has a light efficiency of about 5% compared to DMD equipment. Light efficiency of 10% or more can be obtained. The AMA device is projected on the screen To improve the contrast of the picture, making the picture brighter and sharper. Not only can it be imaged and is not affected by the polarity of the incoming light beam, It does not affect the polarity of the reflected light beam. By Gregory Um like this Of the AMA engine system disclosed in US Pat. No. 5,126,836 The diagram is shown in FIG.   Referring to FIG. 1, a light beam incident from a light source 1 is transmitted through a first slit 3 and a first laser. While passing through the lens 5, the light is separated by the R, G, B (Red, Green, Blue) color field. R ・ G ・ The luminous flux separated for each B is deflected by the first mirror 7, the second mirror 9 and the third mirror 11, respectively. AMA elements 13, 15, and 17 installed corresponding to each mirror Is done. The AMA elements 13, 15, and 17 formed for each of R, G, and B are respectively housed inside. The incident light beam is reflected by tilting the provided mirror at a predetermined angle. At this time, the mirror is tilted by deformation of a deformation layer (active layer) formed below the mirror. I can get it. The light reflected from the AMA elements 13, 15, 17 is the second lens. After passing through the lens 19 and the second slit 21, the screen is projected by the projection lens 23. (Not shown) to connect the images.   The AMA of such an optical path adjusting device is roughly divided into a bulk type and a thin film type. Are classified. The bulk type optical path adjusting device is disclosed in U.S. Pat. No. 469,302. Bulk type optical path adjusting device uses multilayer ceramic A ceramic wafer (wafer), which is cut thin and has metal electrodes formed inside, is transferred. After mounting on the active matrix built into the Gister It is made by processing with a sawing method and installing a mirror on top of it. But ba Luc-type optical path adjustment devices require high precision in design and manufacture, There is a problem that the response speed is slow. This makes it possible to manufacture using a semiconductor process A thin-film optical path adjusting device was developed.   The thin film type optical path adjusting device is disclosed in Japanese Patent Application No. 08/336 filed by the present applicant in the United States. No., 021 (Title of Invention: Thin-film type optical path adjusting device and manufacturing method thereof) TED MIRROR ARRAY FOR USE IN AN OPTICAL PROJECTION SYSTEM AND METHOD FOR THE MANUFACTURE THEREOF)).   FIG. 2 is a sectional view of the thin-film type optical path adjusting device.   Referring to FIG. 2, the thin-film type optical path adjusting device includes an active matrix. ive matrix) 31, an activator formed on the active matrix 31 Actuator 33 and a mirror formed on top of the actuator 33 (mirror) 35.   The active matrix 31 includes a substrate 37 and an upper portion of the substrate 37. M × N (M and N are integers) transistors (not shown) formed in M × N connecting terminals formed on the top of the transistor 39.   The actuator 33 is provided at the upper end of the active matrix 31 with the connection end. A supporting member 41 including the child 39, the lower end of one side is a supporting member. 41 and is formed so that the other side is parallel to the active matrix 31. A first electrode 43, the connection terminal 39 inside the support portion 41; And a first conduit 43 formed to connect the first electrode 43 and the first electrode 43. Active layer 45 formed on top of pole 43, formed on top of deformed layer 45 A second electrode 47 formed on one side of the second electrode 47 Spacing member 51, and one side below spacing member 51 A support layer having an end attached and having the other side formed parallel to the second electrode 47 is formed. ing layer) 53.   Then, the mirror 35 is formed on the support layer 53.   Hereinafter, a method of manufacturing the thin-film optical path adjusting device will be described. Figures 3A to 3D FIG. 3 is a manufacturing process diagram of the device shown in FIG. 2; 3A to 3D, FIG. The same reference numbers are used for the same parts as in FIG.   Referring to FIG. 3A, first, M × N transistors (not shown) Formed on the substrate 37 and the above-mentioned transistors and the like. An active matrix 31 including a connection terminal 39 is provided. Then active Forming a first sacrificial layer 55 on top of the matrix 31; After that, the first sacrificial layer 55 is patterned to A portion where M × N connection terminals 39 are formed is exposed. After the first sacrificial layer 55 Alternatively, it can be removed using etching or chemicals.   Referring to FIG. 3B, a portion where the exposed M × N connection terminals 39 are formed. Sputtering method, or chemical vapor deposition (Chemical Vapor Deposition). The support part 41 is formed using the (position) method. Then, inside the support part 41 After making a hole (hole), for example, tungsten (W) or the like inside the hole Electrically conductive material filled with conduit 4 9 is formed. The electric conduit 49 connects the first electrode 43 and the connection terminal 39, which are formed later, to the electric current. Connect with the air.   The upper part of the support part 41 in which the electric conduit 49 is formed and the upper part of the first sacrificial layer 55 For example, the first electrode 43 is formed using a conductive material such as gold (Au) or silver (Ag). You. Then, for example, PZT (lead zirconate titanate) or the like is provided on the first electrode 43. The deformable layer 45 is formed by using the piezoelectric material described above. And, on the upper part of the deformation layer 45 For example, the second electrode 47 is formed using a conductive material such as gold or silver. Acte The transistors built in the active matrix 31 Is converted into a signal current. The signal current is supplied to the connection terminal 39 and the conduit 4 9 to the first electrode 43. At the same time, the active matrix is Current flows from a common electrode line (common line) (not shown) formed on the rear surface of the When applied, an electric field is generated between the second electrode 47 and the first electrode 43. Live. This electric field causes a change formed between the second electrode 47 and the first electrode 39. The shape layer 45 becomes tilted.   Referring to FIG. 3C, a second sacrificial layer is formed on the second electrode 47.  After the formation of the second electrode 47, the second sacrificial layer 57 is patterned. The portion adjacent to the portion where the supporting portion 41 is formed below is exposed. The second telephone After forming the spacing member 51 on the exposed portion of the pole 47, the second sacrificial layer 57 is formed. And, a supporting layer 53 is formed on the spacing member 51. Then, a mirror 35 for reflecting light incident from the light source is formed above the support layer 53. You.   Referring to FIG. 3D, the mirror 35, the support layer 53, the second electrode 47, the deformation layer 45, Then, the first electrodes 43 are sequentially patterned to form M × N pixels (pix) having a predetermined shape. el). Subsequently, after removing the second sacrifice layer 57 and the first sacrifice layer 55, The pixel is washed and dried to complete a thin-film optical path adjusting device.   However, in the above-described thin-film type optical path adjusting device, an activator having one deformable layer is used. The light incident from the light source is tilted to the top of the actuator. The tilting angle of the actuator to reflect using the formed mirror There is a problem that the tilting angle is limited. This allows it to be reflected by the mirror The light efficiency of the projected light decreases, and the contrast (contrast) of the image projected on the screen decreases. Be lowered. In addition, because the tilt angle of the actuator is small, the light source The problem with the same system design is that the distance between the screen and the screen becomes smaller There is.Summary of the Invention   A first object of the present invention is to provide a structure in which adjacent actuating parts are opposed to each other. An actuator having a plurality of actuating portions to be driven is formed and narrowed. The tilting angle of the reflective member mounted on the actuator An object of the present invention is to provide a thin-film type optical path adjusting device that can be enlarged.   A second object of the present invention is to move adjacent actuating sections in opposite directions. An actuator having a plurality of actuating portions to be driven is formed and narrowed. The tilting angle of the reflective member mounted on the actuator An object of the present invention is to provide a method of manufacturing a thin-film type optical path adjusting device that can be enlarged.   In order to achieve the above object, the present invention provides a substrate, and an actuator formed on the substrate. A first member having a tutor and a reflecting member formed on the actuator; A thin-film optical path adjusting device driven according to a signal and a second signal is provided.   The substrate has an electrical wiring and connection for receiving and transmitting the first signal from outside. Including terminals. The actuator includes a first actuator and a second actuator. Including weighting.   The first actuating portion is formed on an upper portion of one side of the substrate, and is provided with the first actuating portion. A first lower electrode to which a signal is applied, and a second signal corresponding to the first lower electrode, A first upper electrode for generating an air field, and between the first lower electrode and the first upper electrode And a first deformable layer deformed by the electric field.   The second actuating portion is formed on the other side of the substrate, and is provided with the second actuating portion. A second lower electrode to which a signal is applied, and receiving the first signal corresponding to the second lower electrode. A second upper electrode for generating an electric field, and a first upper electrode integrally formed with the first deformable layer. The first actuator includes a second deformable layer deformed by an electric field. The driving unit is driven in the opposite direction.   The actuator may further include a first connecting the first lower electrode and the second upper electrode. 1 connecting member and a second connecting member connecting the second lower electrode and the first upper electrode including.   The second actuating section is opposite to the first actuating section Drive in the direction. The second deformation layer is formed integrally with the first deformation layer.   The reflection member is formed on the second actuating portion.   The first lower electrode and the second lower electrode are made of a metal having electrical conductivity. The first deformation layer and the second deformation layer are formed of a piezoelectric material or an electrostrictive material. Formed using. The first upper electrode and the second upper electrode have electrical conductivity. Formed using a metal.   Preferably, the first lower electrode and the second lower electrode are made of platinum (Pt), tantalum (T a), or formed using platinum-tantalum (Pt-Ta). The first deformation layer and the front The second deformable layer is formed using PZT, PLZT, or PMN, and the first upper electrode The second upper electrode is formed using aluminum, platinum, or silver.   Preferably, the first deformation layer and the second deformation layer are formed using ZnO. .   The second actuating unit is formed on one side of the second upper electrode. And a post for supporting the reflection member. The reflection member has reflectivity It is formed using a metal, for example, aluminum, platinum, or silver.   The first lower electrode has an 'L' shape, and the second lower electrode has a reverse shape. The first lower electrode and the second lower electrode having an 'L' shape Have a 'U' shape.   The first deformation layer and the second deformation layer are connected to each other to have a 'U' shape.   The first upper electrode has an “L” shape, and the second upper electrode has the first upper electrode. It has a mirror-shaped 'L' shape smaller than the pole.   Preferably, the first connection member is connected to the second upper electrode through the first deformation layer. And a first via contact formed from the first lower electrode to the first lower electrode. is there. The second connecting member may be connected to the first upper electrode through the second deformation layer to form the second connection member. 2 is a second via contact formed up to two lower electrodes. The first viaco The contact and the second via contact are made of a metal having electrical conductivity, for example, a contact. It is formed using tungsten or titanium.   Preferably, the actuator has a 'U' shape.   Further, in order to achieve the above object, the present invention drives the first signal and the second signal. A method of manufacturing a moving thin film type optical path adjusting device is provided. Production of the thin-film type optical path adjusting device The construction method is   Electrical wiring and connection terminal for receiving a first signal from outside and transmitting the first signal Providing a substrate comprising:   Forming a lower electrode layer on the substrate, patterning the lower electrode layer, A first lower electrode to which one signal is applied and a second lower electrode to which the second signal is applied Forming,   Forming a deformable layer on the first lower electrode and the second lower electrode; A first deformable layer deformed by a first electric field by patterning Forming a second deformable layer deformed by a second electric field formed in a direction opposite to the field Stages and   Forming an upper electrode layer on the first deformation layer and the second deformation layer, Patterning an extreme layer to generate the first electric field by applying the second signal; A first upper electrode and a second upper electrode to which the first signal is applied to generate the second electric field Forming an external electrode;   Forming a first connection member for connecting the first lower electrode and the second upper electrode; And   Forming a second connection member for connecting the second lower electrode and the first upper electrode; And the stage   Forming a reflective member on the second upper electrode;   The step of forming the lower electrode layer includes forming a sacrificial layer on the substrate and forming the sacrificial layer. The exposed layer was patterned to expose a portion of the substrate where the connection terminal was formed. Will be performed later. The step of forming the sacrificial layer includes phosphor silicate glass (PSG), gold Atmospheric pressure chemical vapor deposition (APCVD) method, sputtering method and vapor deposition of metals or oxides. This is performed using a wearing method. The step of forming the sacrificial layer may include a step of forming a surface of the sacrificial layer. Using Spin On Glass (SOG) or CMP (Chemical  The method further includes a step of flattening using a mechanical polishing method.   The step of forming the lower electrode layer includes platinum, tantalum, or platinum-tantalum. This is performed using a sputtering method or a chemical vapor deposition method. The upper electrode The step of forming a layer is performed by sputtering aluminum, platinum, or silver, or This is performed using a chemical vapor deposition method.   The step of forming the deformation layer may include ZnO, PZT, PLZT, or PMN by sol-gel (Sol-g el), sputtering, or chemical vapor deposition (CVD) methods. You. The step of forming the reflection member is performed by sputtering aluminum, platinum, or silver. This is performed using a method or a vapor deposition method.   The step of forming the first connection member includes etching the second upper electrode and the first deformation layer. The second via is performed after forming a first via hole by engraving. The step of forming a binding member includes etching the first upper electrode and the second deformation layer to form a second block. Performed after forming a via hole.   In the thin film type optical path adjusting device according to the present invention, the first lower electrode is formed on the substrate. The first signal, ie, the image current signal, through the electrical wiring, the connection terminal and the plug. Is applied. At the same time, the second signal, that is, the second signal, A bias current signal is applied. Therefore, between the first upper electrode and the first lower electrode An electric field is generated. By such an electric field, the first upper electrode and the first lower electrode The first deformed layer formed therebetween causes deformation. The first deformation layer responds to the generated electric field. Then shrink vertically. In this case, the first deformation layer is the one where the first lower electrode is located. Actuate in the opposite direction. That is, the first deformable layer has a predetermined angle. To actuate upward.   At the same time, the first signal is applied to the second upper electrode through the first connection member. The second signal is applied to the second lower electrode through the second connection member. Accordingly Thus, an electric field is generated between the second upper electrode and the second lower electrode. This electric field is on the first The electric field is opposite to the electric field generated between the unit electrode and the first lower electrode. like this The second deformable layer formed between the second upper electrode and the second lower electrode is deformed by the reverse electric field. Raise shape. The second deformation layer contracts in a direction perpendicular to the electric field. In this case, the second The deformation layer actuates in a direction opposite to the direction in which the second upper electrode is located. That is, the second deformation layer is actuated downward. Til of the second deformation layer The tilting angle is the same as the tilting angle of the first deformation layer.   When the magnitude of the tilting angle of the first deformation layer is θ, the first deformation layer including the first deformation layer 1 The actuating section has a tilting angle of To couture. A second actuating section including a second deformation layer; Actuate downward with a tilting angle of the order of θ. When the first actuating section is actuated upward, the first actuating section is actuated. The second actuating part connected to the steering part also has a magnitude of θ. It is inclined upward at an angle. In this state, the second deformation layer is actuated downward. The second actuating section including the second deformable layer for performing the actuation has a large θ. Actuate downward with a tilting angle of size. Accordingly Thus, the final tilting angle of the second actuating section is 2θ. light source The reflecting member for reflecting the light incident from the second actuating part is formed on the upper part of the second actuating part. Therefore, it is inclined at an angle of 2θ.   Therefore, the above-described thin-film type optical path adjusting device according to the present invention can be used for the adjacent actuators. A plurality of actuating sections that drive in opposite directions By forming an actuator including a conventional optical path even in a limited area The reflecting member can be driven at twice the tilting angle compared to the adjusting device. You. Therefore, the light efficiency of the light reflected by the reflecting member can be increased. Improve the contrast of the image projected on the screen, bright and clear image Can be tied. Also, the tilting angle of the reflective member becomes larger The distance between the light source and the screen can be widened.BRIEF DESCRIPTION OF THE FIGURES FIG. 1 is a schematic view of an engine system of a conventional light path adjusting device. FIG. 2 is a sectional view of the thin-film type optical path adjusting device described in the applicant's prior application. 3A to 3D are views showing the manufacturing process of the device shown in FIG. FIG. 4 is a plan view of the thin-film type optical path adjusting device according to the first embodiment of the present invention. FIG. 5 is a sectional view of the device shown in FIG. 4 taken along the line A1-A2. FIG. 6 is a sectional view of the device shown in FIG. 4 taken along the line B1-B2. 7 to 10C are views showing the manufacturing process of the device according to the first embodiment of the present invention. You. FIG. 11 is a plan view of a thin-film optical path adjusting device according to a second embodiment of the present invention. FIG. 12 is a sectional view of the device shown in FIG. 11 taken along line C1-C2. FIG. 13 is a sectional view of the device shown in FIG. 11 taken along line D1-D2. FIG. 14 is a sectional view of the device shown in FIG. 11 taken along line E1-E2. FIG. 15 to FIG. 18C are manufacturing process diagrams of the device according to the second embodiment of the present invention. is there.BEST MODE FOR CARRYING OUT THE INVENTION   Hereinafter, the present invention will be described in detail with reference to the drawings, focusing on preferred embodiments of the present invention. . Example 1   FIG. 4 is a plan view showing a thin-film type optical path adjusting device according to a first embodiment of the present invention. FIG. 5 is a cross-sectional view of the device taken along line A1-A2. FIG. 6 is a sectional view of the device taken along the line B1-B2.   Referring to FIG. 4, a thin film type optical path adjusting device according to the present invention includes a substrate 1. 00, an actuator 170 formed on the substrate 100, and The mirror 170 includes a mirror 180 formed on the actuator 170.   The actuator 170 includes a first actuator formed on an upper side of the substrate 100. The first actuating portion 171 and the upper part on the other side of the substrate 100 The second actuating portion 172 formed in the Including. The second actuating section 172 includes a first actuating section 171. And is formed integrally therewith. First actuating section 171 and second actuating section The actuator 170 including the tongue 172 has a U-shape.   The reflection member 180 is formed at an upper portion of one side of the second actuating portion 172. Supported by a post 175 to cover the actuator 170 It is formed. Preferably, the reflection member 180 is a mirror.   Referring to FIG. 5, electrical wiring (not shown) is formed. The substrate 100 is connected to a connection terminal formed on the electrical wiring. cting terminal) 105, the substrate 100, and the insulating layer A passivation layer 110, an etching prevention layer laminated on the protection layer 110. (etch stop layer) 115, and pass through the protective layer 110 from the surface of the etching prevention layer 115. And a plug 120 formed up to the connection terminal 105. Preferably before The electrical wiring is MOS (Metal Oxide Semiconductor) that performs switching operation Includes transistors.   The first actuating portion 171 is provided inside and below the etching prevention layer 115 for the plug 12. The lower end of one side is attached to the portion where the 0 and the connection terminal 105 are formed, and the other side is not etched. First bottom electrode 1 stacked parallel to layer 115 41, a first active layer stacked on the first lower electrode 141 151, and a first top electrode (first top electrode) stacked on the first deformation layer 151. 161). Other than the etching prevention layer 115 and the first lower electrode 141 A first air gap 130 is interposed on the side.   Referring to FIG. 6, the second actuating portion 172 includes an etching prevention layer 115. A second lower electrode (second boring electrode) stacked on the ttom electrode) 142, a second deformation layer (se cond active layer) 152, and a second layer stacked on the second deformable layer 152. A second top electrode 162 is included.   A first air gap is formed on the other side of the etching prevention layer 115 and the second lower electrode 142. 130 is interposed.   Referring to FIG. 4, the first actuating portion 171 has the first A second upper electrode and a first lower electrode extended to one side of one actuating portion 171 A first via contact 165 for connecting to electrode 141 is formed. . In addition, the second actuating section 172 has the second actuator The first upper electrode and the second lower electrode 142 extended to one side of the A second via contact 166 for connection is formed. 2nd actu The second deformable layer 152 of the actuating section 172 includes the first actuating section 171. Is formed integrally with the first deformation layer 151. The first lower electrode 141 has an “L” shape The second lower electrode 142 has a mirror-like 'L' shape. Therefore, before The first lower electrode 141 and the second lower electrode 142 have a 'U' shape. One side of the first deformable layer 151 is connected to one side of the second deformable layer 152 to form the first deformable layer. Both 151 and the second deformation layer 152 have a 'U' shape. First upper electrode 16 1 has an “L” shape, and the second upper electrode 162 is smaller than the first upper electrode 161. It has a mirror-like 'L' shape.   A post is placed on one side of the second upper electrode 162 of the second actuating section 172. 175 is formed. The reflecting member 180 is supported at the center by the post 175. It is. One side of the reflection member 180 is formed to be parallel to the second upper electrode 162. . A second air gap is provided between the second upper electrode 162 and one side of the reflection member 180. A second air gap 135 is interposed. The other side of the reflection member 180 is an adjacent Cover the upper part of the actuator. Preferably, the reflecting member 180 has a square shape. Have.   Hereinafter, a method for manufacturing the thin-film optical path adjusting device according to the present embodiment will be described in detail with reference to the drawings. I will tell.   7 to 10C are manufacturing process diagrams of the thin-film optical path adjusting device according to the present embodiment. is there.   Referring to FIG. 7, a connection by an electric wiring (not shown) for receiving a signal from outside is provided. The connection terminal 105 is formed on the substrate 100. Preferably, the electrical wiring is Including MOS transistors. The connection terminal 105 is made of, for example, tungsten (W). Formed using metal. The connection terminal 105 is electrically connected to the electric wiring. You. The electrical wiring and the connection terminal 105 receive a first signal from the outside and receive the first signal. 1 to the lower electrode 141. The first signal is a picture current signal (picture current s). ignal).   Phosphor silicate glass (Phosphor-Si) is provided on the substrate 100 and the connection terminals 105. The protective layer 110 is laminated using licate glass (PSG). The protective layer 110 is made of chemical Use a Chemical Vapor Deposition (CVD) method. 1-1. 0 μm It is formed to have a thickness of about. The protective layer 110 may be Prevents the substrate 100 on which the wiring and connection terminals 105 are formed from being damaged I do.   An etching prevention layer 115 is formed on the protective layer 110 by using nitride. The layers are stacked so as to have a thickness of about 00 to 2000 °. Etching prevention layer 115 is low It is formed using a low pressure chemical vapor deposition (LPCVD) method. Etching prevention The layer 115 may damage the protective layer 110 and the substrate 100 during a subsequent etching process. To prevent them from receiving   Then, in the etching prevention layer 115, the portion where the connection terminal 105 is formed below After the etching prevention layer 115 and the protective layer 110 are etched, tungsten (W) or titanium The plug 120 is formed using a conductive metal such as titanium (Ti). Plug 12 0 uses a sputtering method or a chemical vapor deposition method (CVD) Formed. The plug 120 is electrically connected to the connection terminal 105. Therefore , A first signal is an electrical wiring, a connection terminal 105, and a plug 12 0 is applied to a first lower electrode 141 formed later.   Phosphor-silica gate glass (PSG) on the etching prevention layer 115 and the plug 120 The sacrificial layer 125 is stacked using a metal, an oxide, or the like. Sacrificial layer 1 25 is Atmospheric Pressure CVD (APCVD) method, sputtering N 1. Using an evaporation method or an evaporation method. 0-2. About 0μm thickness Is formed.   In this case, the sacrificial layer 125 has the electric wiring and the connection terminal 105 formed thereon. Since it covers the top of the substrate 100, its surface flatness is very poor. did Therefore, the surface of the sacrificial layer 125 is formed using spin on glass (SOG). Or using a CMP (Chemical Mechanical Polishing) method. You. Subsequently, a portion of the sacrificial layer 125 where the connection terminal 105 is formed is patterned. To expose a part of the etching prevention layer 115 around the portion formed on the plug 120. Let out.   8A to 8C, the exposed portion of the etching prevention layer 115 is shown. And a bottom electrode layer 140 is laminated on the sacrificial layer 125 Is done. The lower electrode layer 140 is made of gold having electrical conductivity. Laminated using platinum (Pt), tantalum (Ta), or platinum-tantalum (Pt-Ta) I do. The lower electrode layer 140 may be formed by a sputtering method or a chemical vapor deposition. Using the method 1-1. It is formed so as to have a thickness of about 0 μm. Continue , The lower electrode layer 140 is patterned to form the first lower electrode 141 and the second lower electrode 1. 42 is formed. At the same time, as shown in FIG. 8C, the first lower electrode 141 An iso-cutting 145 is performed between the first lower electrode 142 and the second lower electrode 142. The pole 141 and the second lower electrode 142 are electrically short-circuited. Therefore, The first lower electrode 141 has an “L” shape, and the second lower electrode 142 has a mirror-like “L” shape. Therefore, both the first lower electrode 141 and the second lower electrode 142 have a 'U 'Shaped.   9A to 9C, the first lower electrode 141 and the second lower electrode 1 The deformation layer 150 is stacked on the upper part of the substrate. The deformation layer 150 is made of ZnO, PZT, or PL. Use a piezoelectric material such as ZT. 1-1. Formed to have a thickness of about 0μm I do. In addition, the deformation layer 150 can be formed using an electrostrictive material such as PMN. Deformation layer When the layer 150 is formed using ZnO, the deformation layer 150 is formed at a low temperature of 300 ° C. to 600 ° C. Can be formed at warm temperatures. Therefore, it is possible to prevent the substrate 100 from being damaged by deposition. Wear. The deformation layer 150 may be formed by a sol-gel method, a sputtering method, or a chemical method. After forming using the vapor phase deposition (CVD) method, rapid thermal treatment (Rapid Thermal Annealin g: Heat treatment using the RTA) method to change the state. Subsequently, the deformation layer 150 is polarized ( poling). Also, if the deformation layer 150 is formed using ZnO, the deformation layer 150 Are polarized by the electric field formed by the first and second signals. Is unnecessary. As shown in FIG. 9C, the deformation layer 150 is patterned. To form a first deformation layer 151 and a second deformation layer 152. At this time, the first The deformable layer 151 and the second deformable layer 152 are connected to have a 'U' shape.   The upper electrode layer 160 is stacked on the first deformation layer 151 and the second deformation layer 152. You. The upper electrode layer 160 is made of an electrically conductive material such as aluminum (Al), platinum, or silver (Ag). It is formed using a metal having properties. The upper electrode layer 160 is formed by a sputtering method, Alternatively, use a chemical vapor deposition method. 1-1. Have a thickness of about 0μm Formed. Subsequently, as shown in FIG. 9C, the upper electrode layer 160 is patterned. To form the first upper electrode 161 and the second upper electrode 162, The first actuating section 171 and the second actuating section 172 are formed. Is done. The first upper electrode 161 has an “L” shape, and the second upper electrode 162 has a first shape. It has a mirror-shaped “L” shape smaller than the upper electrode 161. For the first upper electrode 161 The second signal is applied from a common electrode line (not shown). The second letter The symbol is a bias current signal.   Referring to FIGS. 10A to 10C, the first actuating section 171 The second upper electrode 162 and the first upper electrode 151, which can be extended to one side, are etched. One via hole is formed. The first via contact 165 is made of tungsten. Or a metal such as titanium by using a sputtering method. Formed in the hole.   The second via hole and the second via contact 166 are connected to the first via hole. And the first via contact 165 is formed in the same manner. 2nd via hole Is the first upper electrode 161 that can be extended to one side of the second actuating portion 172 And the second deformation layer 152 is formed by etching. The second via contact 166 is Metal such as tungsten or titanium by using a sputtering method. Formed in the second via hole.   The first lower electrode 141 is connected to the first actuator through a first via contact 165. The second upper electrode 162 is extended to the lighting part 171. Also, the second The lower electrode 142 is connected to the second actuator through a second via contact 166. Connected to the first upper electrode 161 extending to the ring 172.   The first lower electrode 141 has the electrical wiring, the connection terminal 105, and the plug 120. Through the first signal. Therefore, the first signal is applied to the first lower electrode 141. When the second signal is applied to the first upper electrode 161 at the same time, the first upper electrode An electric field is generated between the pole 161 and the first lower electrode 141. At the same time, The first signal applied to the first lower electrode 141 passes through the first via contact 165. Is applied to the second upper electrode 162. Also, the first upper electrode 161 The second signal is applied to the second lower electrode 14 through a second via contact 166. 2 is applied. Therefore, between the second upper electrode 162 and the second lower electrode 142 An electric field is generated. This electric field is applied to the first upper electrode 161 and the first lower electrode 141. Is an electric field opposite to the electric field generated during the period. Therefore, the first deformation layer 151 and The second deformation layer 152 deforms in opposite directions.   Subsequently, the sacrificial layer 125 is etched using hydrogen fluoride (HF) vapor. Sacrificial layer When the 125 is removed, the first air gap 130 is formed at the position of the sacrificial layer 125. Is done. Therefore, the first actuator 171 and the second actuator The marking section 172 is completed.   Referring to FIG. 10C, the first actuator 171 and the second actuator A photoresist (not shown) is coated on the upper part of the waiting part 172 Thereafter, the photoresist is patterned to expose a part of the second upper electrode 162. Let A post 175 is formed at the exposed portion of the second upper electrode 162, A reflection member 180 is formed on the post 175 and the photoresist. Pos 175 and the reflection member 180 have reflectivity of aluminum, platinum, silver or the like. Formed using a metal. Reflecting member 180 and post 175 are sputtering It is formed using a method or an evaporation method. The reflection member 180 is 5 It has a thickness of about 100 to 1000 °. Preferably, the reflecting member 180 is a mirror . Subsequently, the photoresist is etched away. The photoresist is removed Then, the second air gap 135 is formed at the position where the photoresist was located. Is done. The reflecting member 180 is a flat plate whose center is supported by the post 175. It has a shape. The second air is provided between one side of the second upper electrode 162 and the reflection member 180. A gap 135 is interposed. One side of the reflection member 180 is flat with the second upper electrode 162. So that it covers a part of the actuator adjacent to the other side. Is done. As a result, the actuator 17 having the reflection member 180 formed thereon is formed. 0 is completed.   Hereinafter, the operation of the thin-film type optical path adjusting device according to the present embodiment will be described.   In the thin film type optical path adjusting device according to the present embodiment, the first lower electrode 141 is electrically connected to the first lower electrode 141. The first signal, that is, the image current A signal is applied. The first signal is also transmitted through a first via contact 165. The voltage is applied to the second upper electrode 162. At the same time, the first upper electrode 161 A second signal, a bias current signal, is applied through the polar line. The second signal Is also applied to the second lower electrode 142 through a second via contact 166. You. Therefore, between the first upper electrode 161 and the first lower electrode 141 and between the first upper electrode 161 and the second upper electrode 141. An electric field is generated between the electrode 162 and the second lower electrode 142, respectively. like this The first electric field formed between the first upper electrode 161 and the first lower electrode 141 by an electric field Formed between the deformation layer 151 and the second upper electrode 162 and the second lower electrode 142 Each of the second deformation layers 152 deforms. First deformation layer 151 and second deformation layer 1 52 contracts in a direction perpendicular to the generated electric field. In this case, the first deformation layer 151 is actuating in the direction opposite to the direction in which the first lower electrode 141 is located Then, the second deformation layer 152 is activated in a direction opposite to the direction in which the second upper electrode 162 is located. To wait.   That is, the first deformable layer 151 is actuated upward, The deformation layer 152 actuates downward. First deformation layer 151 And the second deformation layer 152 have the same tilting angle.   When the magnitude of the tilting angle of the first deformation layer 151 is θ, the first deformation layer 1 The first actuating portion 171 including the tilt angle 51 has a tilting angle of θ. Actuate upward with a certain degree. In addition, the second including the second deformation layer 152 2 Actuating section 172 has a tilting angle of θ Actuate to The first actuating section 171 is When actuating, the second actuating section 171 is connected to the second actuating section 171. The actuating portions 172 also have an angle of θ and tilt upward. become. In this state, when the second deformation layer 152 is actuated downward, The second actuating portion 172 including the second deformation layer 152 has a tilt of θ. Actuate downward with a sting angle. Therefore, the second The final tilting angle of the tuating section 172 is 2θ. Enter from light source The reflecting member 180 that reflects the emitted light is located above the second actuating section 172. Since it is formed in the portion, it is inclined at an angle of 2θ. Example 2   FIG. 11 is a plan view of a thin-film type optical path adjusting device according to a second embodiment of the present invention. FIG. 12 is a sectional view of the device shown in FIG. 11 taken along line C1-C2, and FIG. FIG. 14 is a sectional view of the apparatus shown in FIG. 11 taken along the line D1-D2, and FIG. FIG. 2 is a sectional view of the device shown in FIG. 1 taken along line E1-E2.   Referring to FIG. 11, the thin-film type optical path adjusting device according to the present embodiment includes a substrate 200 and a base. Actuator 270 formed on top of plate 200 and actuator 27 0 includes a reflective member 280 formed thereon.   The actuator 270 includes a first actuator formed on one side of the substrate 200. 271, a second actuator formed on the other upper side of the substrate 200 272, the first actuating section 271 and the second actuator A first actuating section 271 and a second actuating section The third actuating part (third act) formed integrally with the uating part) 273.   The reflection member 280 is formed at an upper portion of one side of the third actuating portion 273. Formed to cover actuator 270, supported by post 275 You. Preferably, the reflecting member 280 is a mirror.   Referring to FIG. 12, a substrate 20 on which electric wiring (not shown) is formed is provided. Reference numeral 0 denotes a connection terminal 205, a substrate 200, and a connection terminal formed above the electrical wiring. A protection layer 210 formed on the connection terminal 205, a protection layer 210 formed on the protection layer 210; From the surface of the anti-etching layer 215 and the anti-etching layer 215 through the protective layer 210 It includes a plug 220a formed up to the connection terminal 205.   Preferably, the electrical wiring is a MOS transistor performing a switching operation. Including The first actuating section 271 is located inside and below the etching prevention layer 215. The lower end of one side is attached to the portion where the plug 220a and the connection terminal 205 are formed. A first lower electrode 241 laminated on the other side so as to be parallel to the etching prevention layer 215, A first deformation layer 251 stacked on the lower electrode 241, and a first deformation layer 251 And a first upper electrode 261 stacked on top of the first electrode. Anti-etching layer 215 and first bottom A first air gap 230 is interposed between the other sides of the unit electrodes 241.   The second actuating section 272 is the same as the first actuating section 271. It has the same shape. Referring to FIG. 13, the second actuating section 272 is The plug 220b and the connection terminal 205 are formed below the etching prevention layer 215. The lower end of one side is attached to the portion and the other side is laminated so as to be parallel to the etching prevention layer 215. The second lower electrode 242, the second deformation layer 25 laminated on the second lower electrode 242 2 and a second upper electrode 262 stacked on the second deformation layer 252. Food The first air gap 23 is provided between the anti-cutting layer 215 and the other side of the second lower electrode 242. 0 is interposed.   Referring to FIG. 14, the third actuating portion 273 includes the etching prevention layer 2. A third bottom electrode 253 formed to be parallel to 15 A third active layer (third active layer) 26 laminated on the third lower electrode 243; 3) and a third top electrode (third top elec) laminated on the third deformation layer 253. trode) 273. The third deformation layer 253 of the third actuating section 273 is The first deformation layer 251 and the second deformation layer 252 are formed integrally. Etching prevention layer 215 A first air gap 230 is also provided between the first air gap 230 and the third lower electrode 243.   Referring to FIG. 11, the first via contact 265 is connected to the first actuator. Upper electrode 263 and first lower electrode 241 extended to one side of Is formed at one side of the first actuating portion 271 to connect the second actuating portion. Second Via contact 266 extends to one side of second actuating section 272 In order to connect the third upper electrode 263 and the second lower electrode 242, It is formed on one side of the ating portion 272. The third via contact 267 is The first upper electrode 261 extended to one side of the third actuating portion 273 and the first One side of the third actuating portion 273 to connect the third lower electrode 243 Formed. The fourth via contact 268 is connected to the third actuating section 2 73 connects the second upper electrode 262 and the third lower electrode 243 extended to the other side. Therefore, it is formed on the other side of the third actuating portion 273. 3rd actue The third deformation layer 253 of the coating part 273 includes the first deformation layer 251 and the second deformation layer 25. 2 are formed integrally.   One side of the third upper electrode 263 of the third actuating portion 273 has a post 2 75 are formed. The reflection member 280 is supported at the center by the post 275. It is. One side of the reflection member 280 is formed to be parallel to the third upper electrode 263. . A second air gap is provided between the third upper electrode 263 and one side of the reflection member 280. 235 are interposed. The other side of the reflection member 280 is one of the adjacent actuators. Cover part. Preferably, the reflection member 280 has a rectangular shape.   The first lower electrode 241, the second lower electrode 242, and the third lower electrode 243 are respectively It has rectangular shapes parallel to each other.   One side of the third deformable layer 253 is connected to one side of the first deformable layer 251 to form a third deformable layer 25. 3 is connected to one side of the second deformation layer 252 to connect the first deformation layer 251 and the second deformation layer 2 52 and the third deformation layer 253 have an “E” shape.   The first upper electrode 261 has an inverted “L” shape, and the second upper electrode 262 has It has a mirrored inverted upside-down 'L' shape. Third upper power The pole 263 is formed between the first upper electrode 261 and the second upper electrode 262 to form a 'T 'Shaped. Therefore, the first actuating section 271 and the second An actuator including a actuating section 272 and a third actuating section 273 The tutor 270 has an “E” shape.   Hereinafter, a method of manufacturing the thin-film optical path adjusting device according to the second embodiment of the present invention will be described in detail. You.   15 to 18C are manufacturing process diagrams of the device according to the present embodiment.   Referring to FIG. 15, a substrate 20 having electric wiring (not shown) formed therein is formed. A connection terminal 205 is formed on the upper portion of the “0” by the electric wiring. Connecting terminal 20 5 is formed using a metal such as tungsten (W), for example. Connecting terminal 20 5 is electrically connected to the electric wiring. The electrical wiring and connection terminal 20 Reference numeral 5 denotes a first lower electrode 241 and a second lower electrode 242 which receive a first signal from the outside. To the first signal. Preferably, the first signal is an image current signal.   Phosphor silicate glass (PSG) is used on the substrate 200 and the connection terminals 205. The protective layer 210 is laminated. The protective layer 210 uses a chemical vapor deposition (CVD) method. Use 0. 1-1. It is formed so as to have a thickness of about 0 μm. The protective layer 210 The substrate 200 on which the electrical wiring and the connection terminal 205 are formed during a subsequent process To prevent damage.   An anti-etching layer 215 is formed on the protective layer 210 by using a nitride, for example, 1000-20. The layers are stacked so as to have a thickness of about 00 °. The anti-etching layer 215 is a low pressure chemical vapor It is formed using a vapor deposition (LPCVD) method. The etching prevention layer 215 is used in the subsequent etching process. Prevents the inter-layer protection layer 210 and the substrate 200 from being etched and damaged. I do.   The portion of the anti-etching layer 215 where the connection terminal 205 is formed below is etched away. After etching the stop layer 215 and the protective layer 210, tungsten (W) or titanium ( The plugs 220a and 220b are formed using an electrically conductive metal such as Ti). You. The plugs 220a and 220b are formed by a sputtering method or a chemical vapor deposition method. Utilized and formed. Plugs 220a and 220b are electrically connected to connection terminal 205 I do. Therefore, the first signal includes the electrical wiring, the connection terminal 205, and First lower electrode 241 and second lower electrode 24 formed later through plug 220 2 is applied.   A phosphor silica gate gas is provided on the etching prevention layer 215 and the plugs 220a and 220b. A sacrificial layer 225 is deposited using lath (PSG), metal or oxide. Sacrifice layer 2 25 is an atmospheric pressure chemical vapor deposition (APCVD) method, a sputtering method or a vapor deposition method. Use 0. 5-2. It is formed so as to have a thickness of about 0 μm. In this case, sacrifice The layer 225 is formed on the substrate 200 on which the electric wiring and the connection terminal 205 are formed. Since the portion is covered, the flatness of the surface is very poor. Therefore, the sacrificial layer 225 surface using spin-on-glass (SOG) or CMP method To make it flat. Subsequently, the connection terminal 205 was formed below and inside the sacrificial layer 225. The etching prevention layer 21 in which the plugs 220a and 220b are formed by patterning the portion Expose part of 5   FIG. 16A is a manufacturing process diagram of the first lower electrode 241 and the second lower electrode 242. FIG. 16B is a manufacturing process diagram of the third lower electrode 243.   16A to 16C, the exposed portion of the etching prevention layer 215 is exposed. The lower electrode layer 240 is stacked on the portion and on the sacrificial layer 225. Lower electrode layer 2 40 is a conductive material such as platinum (Pt), tantalum (Ta), or platinum-tantalum (Pt-Ta) Are laminated using a metal having The lower electrode layer 240 is formed by a sputtering method or Or using a chemical vapor deposition method. 1-1. So that it has a thickness of about 0μm Form. Then, the lower electrode layer 240 is patterned to form the first lower electrode 241 and the first lower electrode 241. The second lower electrode 242 and the third lower electrode 243 are formed.   At the same time, as shown in FIG. 16C, the first lower electrode 241 and the third lower electrode Between the lower electrodes 243 and between the second lower electrode 242 and the third lower electrode 243. The iso-cutting 245 process is performed for a short circuit. Therefore, the first lower The pole 241, the second lower electrode 242, and the third lower electrode 243 are parallel rectangles. It has the shape of   17A to 17C, the lower electrode 241, the second lower electrode 24 The deformation layer 250 is stacked on the second and third lower electrodes 243. Deformation layer 250 Use a piezoelectric material such as ZnO, PZT, or PLZT. 1-1. 0μm thick It is formed to have a thickness. The deformation layer 250 is made of an electrostrictive material such as PMN. Can be formed. The deformation layer 250 can be formed by a sol-gel method, a sputtering method, or a chemical method. After being formed using a vapor deposition (CVD) method, a heat treatment is performed using a rapid thermal processing (RTA) method. And displace the shape. Subsequently, the deformation layer 250 is poled. Deformed in the above When the layer 250 is formed using ZnO, the deformation layer 250 is formed at a temperature of 300 ° C. to 600 ° C. Can be formed at low temperatures. In addition, if the deformation layer 250 is formed using ZnO, the deformation Layer 250 is polarized by the electric field generated by the first and second signals. A separate polarization step is no longer necessary. The deformation layer 250 causes the substrate 200 to undergo deposition damage. Can be reduced. Subsequently, as shown in FIG. 0 to form a first deformation layer 251, a second deformation layer 252, and a third deformation layer 25. Form 3 At this time, the first deformation layer 251, the second deformation layer 252, and the third deformation layer 2 53) has an 'E' shape.   The upper electrode layer 260 includes a first deformation layer 251, a second deformation layer 252, and a third deformation layer 25. 3 are stacked on top of each other. The upper electrode layer 260 is made of aluminum (Al), platinum, or silver. It is formed using a metal having excellent electric conductivity such as (Ag). The upper electrode layer 260 Use a sputtering method or a chemical vapor deposition method. 1-1. About 0μm Is formed to have a thickness of Subsequently, as shown in FIG. The electrode layer 260 is patterned to form a first upper electrode 261, a second upper electrode 262, 3 An upper electrode 263 is formed. The first upper electrode 261 has an inverted “L” shape. In addition, the second upper electrode 262 has a mirror-shaped inverted 'L' shape. Third upper part An electrode 263 is formed between the first upper electrode 261 and the second upper electrode 262. It has a 'T' shape. Therefore, the first actuating section 271 and the second An actuator including an actuating section 272 and a third actuating section 273 The actuator 270 has an 'E' shape. First upper electrode 261 and second upper electrode A second signal is applied to the electrode 262 from a common electrode line (not shown). The second signal Is a bias current signal.   18A to 18C, the first actuating section 271 The third upper electrode 263 and the first deformable layer 251 which can be extended to one side Form a via hole. The first via contact 265 is made of tungsten or The first via hole is formed by sputtering a metal such as titanium using a sputtering method. Form within.   The second via hole, the third via hole and the fourth via hole are respectively It is formed in the same manner as the first via hole. Also, the second via contact 266, the third via contact 267, and the fourth via contact 268 Each is formed in the same manner as the second via contact 265. 2nd buah The ear hole is a third upper part extended to one side of the second actuating part 272. The electrode 263 and the second deformation layer 252 are formed by etching. Second via contact 2 66 is a sputtering method using a metal such as tungsten or titanium. Formed in the second via hole. The third via hole is the third actue The first upper electrode 261 and the third deformation layer 25 extended to one side of the coating portion 273 3 is formed by etching. The fourth via hole is the third actuating section 27 3 by etching the second upper electrode 262 extended to one side and the third deformable layer 253 I do. The third via contact 267 is made of gold such as tungsten or titanium. The third via hole is formed using a metal. 4th via contact Reference numeral 268 denotes the fourth via using a metal such as tungsten or titanium. Formed in the hole. Third Via Contact 267 and Fourth Via Contour The blocks 268 are all formed using a sputtering method.   The first lower electrode 241 is connected to the first actuator through a first via contact 265. The third upper electrode 263 is extended to the upper part 271. 2nd lower power The pole 242 is connected to the second actuating section through a second via contact 266. The second upper electrode 263 extends to 272.   Also, the first upper electrode 261 extended to the third actuating portion 273 Is connected to the third lower electrode 243 through the third via contact 267. . Then, the second upper electrode 262 extended to the third actuating portion 273 of One side is connected to the third lower electrode 243 through a fourth via contact 268. The first signal is transmitted through the electric wiring, the connection terminal 205 and the plugs 220a and 220b. The voltage is applied to the first lower electrode 241 and the second lower electrode 242. Therefore, the first lower The first signal is applied to the lower electrode 241 and the second lower electrode 242, and When a second signal is applied to the first upper electrode 261 and the second upper electrode 262, the first lower electrode Between the lower electrode 241 and the second lower electrode 242 and between the first upper electrode 261 and the second An electric field is generated between the upper electrodes 262. By such an electric field The first deformation layer 251 and the second deformation layer 252 are each deformed. At the same time, The first signal applied to the first lower electrode 241 is applied to a first via contact 265. Through the third upper electrode 263. Also, the first upper electrode 261 Is applied to the third lower electrode 2 through the third via contact 267. 43. Therefore, between the third upper electrode 263 and the third lower electrode 243 The first upper electrode 261 and the first lower electrode 241 and the second upper electrode 261 An electric field opposite to the electric field generated between the first lower electrode 242 and the second lower electrode 242 is generated. did Accordingly, the third deformable layer 253 is formed by the electric field as described above. And deformation in the direction opposite to the second deformation layer 252.   Subsequently, the sacrificial layer 225 is removed using hydrogen fluoride (HF) vapor. Sacrificial layer When the 225 is removed, the first air gap 230 is formed at the position of the sacrificial layer 225. Is done. Therefore, the first actuator 271 and the second actuator The working part 272 and the third actuating part 273 are completed.   Referring to FIG. 18C, the first actuator 271 and the second actuator The photoresist is located above the actuating section 272 and the third actuating section 273. After coating the dist (not shown), the photoresist is patterned Thus, a part of the third upper electrode 263 is exposed. Exposed portion of third upper electrode 263 A post 275 is formed on the substrate, and the post 275 and the upper portion of the photoresist are A shooting member 280 is formed. The post 275 and the reflection member 280 are made of aluminum, It is formed using a reflective metal such as platinum or silver. Reflection member 280 The post 275 is formed using a sputtering method or an evaporation method. Reflection The member 280 has a thickness of about 500 to 1000 °. Preferably, the reflection member 2 80 is a mirror. The photoresist is removed. The photoresist is removed Then, a second air gap 235 is formed in the portion where the photoresist is located. You. The reflecting member 280 has a flat plate shape whose center is supported by the post 275. I do. The reflecting member 280 has one side parallel to the third upper electrode 263 and adjacent to the other side. Is formed so as to cover a part of the actuator that has been formed. The third upper electrode 263 and A second air gap 235 is interposed between one side of the reflection member 280. to this Therefore, the actuator 270 having the reflection member 280 formed thereon is completed. .   Hereinafter, the operation of the thin-film type optical path adjusting device according to the present embodiment will be described.   In the thin film type optical path adjusting device according to the present embodiment, the first lower electrode 241 and the second lower electrode The electrical wiring formed on the substrate 200, the connection terminal 205, and the A first signal, that is, an image current signal is applied through the lugs 220a and 220b. The first signal is applied to a first via contact 265 and a second via contact 26. 6 to the third upper electrode 263. At the same time, the first upper electrode 26 A second signal, that is, a second signal, is connected to the first and second upper electrodes 262 through a common electrode line (not shown). That is, a bias current signal is applied. The second signal is applied to a third via contact 26. The voltage is also applied to the third lower electrode 243 through the seventh and fourth via contacts 268. You. Therefore, between the first upper electrode 261 and the first lower electrode 241, the second upper electrode Between the pole 262 and the second lower electrode 242, and between the third upper electrode 263 and the third lower electrode 242. An electric field is generated between the electrodes 243. Due to such an electric field, The first deformation layer 251 formed between the first electrode 261 and the first lower electrode 241 and the second 2 The second deformation layer 252 formed between the upper electrode 262 and the second lower electrode 242 is Each causes deformation. The first deformed layer 251 and the second deformed layer 252 generate generated electricity. Shrinks perpendicular to the field. At this time, the first deformation layer 251 and the second deformation layer 2 52 is opposite to the direction in which the first lower electrode 241 and the second lower electrode 242 are located, respectively. Actuate in opposite directions. Third upper electrode 263 and third lower electrode 24 The third deformation layer 253 formed between the first and third layers is deformed by the reverse electric field. 3rd change The shape layer also contracts in a direction perpendicular to the electric field. Therefore, the third deformation layer 253 is Actuating is performed in a direction opposite to the direction in which the third upper electrode 263 is located. You That is, the first deformation layer 251 and the second deformation layer 252 are actuated upward. And the third deformation layer 253 is actuated downward. The tilting angle of the first deformation layer 251 is the same as that of the second deformation layer. Also, the third The tilting angle of the deformation layer 253 is the same as that of the first deformation layer 251.   When the magnitude of the tilting angle of the first deformation layer 251 is θ, the first deformation layer 2 The first actuating portion 271 including 51 has a tilting angle of θ. Actuate upward with a certain degree. At the same time, the second deformation layer 252 is included. The second actuating section 272 has a tilting angle of magnitude θ. Actuate upward. Also, a third actuator including the third deformation layer 253 may be used. The ate portion 273 has a tilting angle of θ and is actuated downward. To wait. The first actuating section 271 and the second actuator When the actuating portion 272 is actuated upward, the first actuating Actuator connected to the first actuator 271 and the second actuator 272 The ting portions 273 also have an angle of θ and are inclined upward.   In this state, the third deformation layer 253 is moved to the third position to actuate downward. The third actuating portion 273 including the deformation layer 253 has a tilt angle of θ. Actuate downward with a working angle. Therefore, the third act The final tilting angle of the weighting section 273 is 2θ. Incident from light source The reflecting member 280 for reflecting the light is provided above the third actuating portion 273. , It is inclined at an angle of 2θ.   Therefore, the above-described thin-film type optical path adjusting device according to the present invention can be used for the adjacent actuators. A plurality of actuating sections that drive in opposite directions Including conventional actuators even within the limited area due to having actuators The reflecting member can be driven at twice the tilting angle. But As a result, the light efficiency of the light reflected by the The contrast of the image projected on the screen can be improved. The reflection member Since the tilting angle is larger, the distance between the light source and the screen can be increased.   As described above, the present invention has been described and illustrated in detail by preferred embodiments. This is not intended to limit the scope of the invention to those of ordinary skill in the art. It is possible to modify or improve this within the scope.

Claims (1)

[Claims] 1. An electrical wiring and a connection terminal for receiving the first signal from outside and transmitting the first signal     A substrate including a child;     i) a first lower electrode formed on one side of the substrate and to which the first signal is applied;     Ii) receiving a second signal corresponding to the first lower electrode to generate an electric field;     A first upper electrode, and iii) formed between the first lower electrode and the first upper electrode.     And a first actuator including a first deformable layer deformed by the electric field.     Ting department,     a) a second lower electrode formed on the other side of the substrate and to which the second signal is applied;     B) receiving the first signal corresponding to the second lower electrode and generating an electric field;     C) a second upper electrode formed integrally with the first deformable layer and     And the second actuating layer includes a second deformable layer that deforms.     A second actuating section driven in pairs,   First connecting means for connecting the first lower electrode and the second upper electrode;   An actuator including second connecting means for connecting the second lower electrode and the first upper electrode;     With eta, and   Reflecting means for reflecting light formed on the second actuating portion;     A thin-film optical path adjustment driven according to the first signal and the second signal   apparatus. 2. The first lower electrode and the second lower electrode use a metal having electrical conductivity.     The first deformation layer and the second deformation layer are formed of piezoelectric material or electrostriction.     The first upper electrode and the second upper electrode are formed using a material,     2. The method according to claim 1, wherein the conductive layer is formed using a conductive metal.     The thin-film optical path adjusting device as described in the above. 3. The first lower electrode and the second lower electrode may be platinum (pt), tantalum (Ta), or     The first deformation layer and the second deformation layer are formed using platinum-tantalum (Pt-Ta).     The deformation layer is formed using PZT, PLZT, or PMN, and the first upper electrode and the deformation layer are formed.     And the second upper electrode is formed using aluminum, platinum, or silver.     2. The thin-film optical path adjusting device according to claim 1, wherein: 4. The first deformation layer and the second deformation layer are formed using ZnO.     The thin-film optical path adjusting device according to claim 1, wherein 5. The second actuating part is formed on one side of the second upper electrode.     Further comprising a post for supporting the reflecting means, wherein the reflecting means is reflective.     2. The method according to claim 1, wherein the metal is formed using a metal having     Thin-film optical path adjusting device. 6. The reflection means is formed using aluminum, platinum, or silver.     6. The thin-film optical path adjusting device according to claim 5, wherein: 7. The first lower electrode has an “L” shape, and the second lower electrode has a mirror-like “L” shape.     The first lower electrode and the second lower electrode both have a U shape.     The thin-film optical path adjusting device according to claim 1, wherein 8. The first deformation layer and the second deformation layer are connected to form a 'U' shape.     The thin-film optical path adjusting device according to claim 1, wherein 9. The first upper electrode has an “L” shape, and the second upper electrode has a “L” shape.     2. The method according to claim 1, wherein the electrode has a mirror-shaped "L" shape smaller than the electrode.     3. The thin-film type optical path adjusting device according to item 1. Ten. The first connecting means may connect the first upper electrode to the first upper electrode through the first deformation layer.     A first via contact formed up to a lower electrode;     Is formed from the first upper electrode to the second lower electrode through the second deformation layer     10. The method according to claim 9, wherein the second via contact is formed.     Thin-film type optical path adjustment device. 11． The first and second via contacts are electrically conductive.     11. The semiconductor device according to claim 10, wherein the metal is formed using a metal having     Thin-film type optical path adjustment device. 12． The first via contact and the second via contact may be a tungsten contact.     12. The semiconductor device according to claim 11, wherein said metal is formed using titanium or titanium.     3. The thin-film type optical path adjusting device according to item 1. 13. The said actuator has a shape of 'U' character, The claim characterized by the above-mentioned.     2. The thin-film optical path adjusting device according to 1. 14. An electrical wiring and a connection terminal for receiving the first signal from outside and transmitting the first signal   A substrate including a child; 15． A first lower electrode formed on one side of the substrate and receiving the first signal;     A second signal is applied to the first lower electrode to generate an electric field.     A first upper electrode to be formed, and a first upper electrode formed between the first lower electrode and the first upper electrode.     A first actuator including a first deformable layer that is deformed by the electric field     Ting department,       A second lower electrode formed on the other side of the substrate and to which the first signal is applied     The second deformable layer is formed integrally with the second lower electrode so as to correspond to the second lower electrode;     A second upper electrode receiving a signal to generate an electric field, and the second upper electrode     And a second lower electrode formed between the first lower electrode and the second lower electrode and deformed by the electric field.     A second driving unit including the deformation layer and driving in the same direction as the first actuating unit;     Actuating part,     Between the first actuating section and the second actuating section     A third lower electrode formed on the third lower electrode to which the second signal is applied,     A third upper portion is formed correspondingly to generate the electric field when the first signal is applied.     An electrode, and the electric electrode formed integrally with the first deformed layer and the second deformed layer.     A first deformable layer deformed by a field;     A third actuating section driven in the opposite direction;     First connecting means for connecting the first lower electrode and the third upper electrode;     Second connection means for connecting the second lower electrode and the third upper electrode;     Third connection means for connecting the third lower electrode and the first upper electrode,     An actuating device including fourth connecting means for connecting the third lower electrode and the second upper electrode;     With the heater and     A reflecting means formed on an upper portion of the third actuating portion;     The thin-film optical path adjusting device driven by the first signal and the second signal. 15． The first lower electrode, the second lower electrode, and the third lower electrode have electrical conductivity.     The first deformation layer, the second deformation layer, and the     The third deformation layer is formed using a piezoelectric material or an electrostrictive material, and     The upper electrode, the second upper electrode, and the third upper electrode are electrically conductive gold.     15. The thin-film light according to claim 14, wherein the light is formed using a metal.     Road conditioner. 16． The first lower electrode, the second lower electrode, and the third lower electrode are made of platinum (pt),     Is formed using tantalum (Ta) or platinum-tantalum (Pt-Ta).     The shape layer, the second deformation layer and the third deformation layer use PZT, PLZT or PMN.     The first upper electrode, the second upper electrode, and the third upper electrode     Is formed using aluminum, platinum, or silver.     16. The thin-film optical path adjusting device according to claim 15, wherein 17． The first lower electrode, the second lower electrode, and the third lower electrode have a rectangular shape.     15. The semiconductor device according to claim 14, wherein the first and second electrodes are formed so as to be parallel to each other.     3. The thin-film type optical path adjusting device according to item 1. 18． The first deformation layer, the second deformation layer, and the third deformation layer are connected to each other to form an “E” shape.     15. The thin-film optical path adjusting device according to claim 14, wherein the device has a shape. 19. The first upper electrode has an inverted 'L' shape, and the second upper electrode has     The pole has a mirror-like inverted 'L' shape, and the third upper electrode has a 'T' shape.     The thin-film type optical path adjusting device according to claim 14, wherein the optical path adjusting device has a shape of:     Place. 20. The first connection means is a first via contact, and the second connection means is a first via contact.     A second via contact, wherein the third connection means is a third via contact.     Wherein the fourth connecting means is a fourth via contact.     15. The thin-film optical path adjusting device according to claim 14, wherein: twenty one. The first via contact, the second via contact, the third via     The ear contact and the fourth via contact are metal having electrical conductivity.     21. The thin-film optical path adjusting device according to claim 20, wherein the optical path adjusting device is formed by using     Knot device. twenty two. The first via contact, the second via contact, the third via     The ear contact and the fourth via contact are made of tungsten or titanium.     22. The thin film type according to claim 21, wherein the thin film type is formed using nickel.     Light path adjustment device. twenty three. 2. The actuator according to claim 1, wherein the actuator has an "E" shape.     5. The thin-film optical path adjusting device according to 4. twenty four. An electrical wiring and a connection terminal for receiving the first signal from outside and transmitting the first signal     Providing a substrate including a child;       Forming a lower electrode layer on the substrate, patterning the lower electrode layer,     The first lower electrode to which the first signal is applied and the second lower electrode to which the second signal is applied     Forming an external electrode;       Forming a deformation layer on the first lower electrode and the second lower electrode,     A first deformable layer deformed by a first electric field by patterning the shaped layer;     Second deformation deformed by a second electric field formed in a direction opposite to the first electric field     Forming a layer;       Forming an upper electrode layer on the first deformation layer and the second deformation layer;     The second electrode is patterned to generate the first electric field.     A first upper electrode to be generated and the first signal are applied to generate the second electric field.     Forming a second upper electrode to be formed;       First connection means for connecting the first lower electrode and the second upper electrode is formed.     Stage   Forming second connection means for connecting the second lower electrode and the first upper electrode;     And the stage   Forming a reflection means on the second upper electrode;     And a method of manufacturing a thin-film optical path adjusting device driven by the second signal.   twenty five. The step of forming the lower electrode layer may be performed by forming a sacrificial layer on the substrate.     The sacrificial layer is patterned to expose portions of the substrate where the connection terminals are formed.     25. The thin film light according to claim 24, which is performed after the light is emitted.     Method for manufacturing a road conditioner.   26. The step of forming the sacrificial layer may include phosphor silica gate glass (PSG), metal or     Atmospheric pressure chemical vapor deposition (APCVD) method, sputtering method and vapor deposition method for oxide     26. The thin-film light according to claim 25, wherein the thin-film light is performed using a method.     Method for manufacturing a road conditioner. 27. The step of forming the sacrificial layer includes spin-on-glass (Spin-on-glass).     On Glass (SOG) method or CMP (Chemical Mechanical Polishin)     g) further comprising the step of flattening using a method.     A method for manufacturing the thin-film optical path adjusting device according to box 25. 28. The step of forming the lower electrode layer may include platinum, tantalum, or platinum-tantalum.     Performed using a sputtering method or a chemical vapor deposition method,     Sputtering aluminum, platinum, or silver     Or a chemical vapor deposition method to form the reflecting means.     Is a method of sputtering or depositing aluminum, platinum, or silver     25. The thin film mold according to claim 24, wherein the method is performed using a method.     A method for manufacturing an optical path adjusting device. 29. The step of forming the deformation layer may include ZnO, PZT, PLZT, or PMN by sol-gel (Sol-g     Performed using el) method, sputtering method, or chemical vapor deposition (CVD) method     The manufacturing of the thin-film type optical path adjusting device according to claim 24, wherein     Method. 30. The step of forming the first connection means includes connecting the second upper electrode and the first deformation layer.     The second connecting means is performed after forming the first via hole by etching.     Forming the first upper electrode and the second deformation layer by etching the second upper electrode and the second deformation layer.     25. The method according to claim 24, which is performed after forming the ear hole.     The method for manufacturing the thin-film optical path adjusting device described above.