JP2002510119A5 - - Google Patents

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Publication number
JP2002510119A5
JP2002510119A5 JP2000541689A JP2000541689A JP2002510119A5 JP 2002510119 A5 JP2002510119 A5 JP 2002510119A5 JP 2000541689 A JP2000541689 A JP 2000541689A JP 2000541689 A JP2000541689 A JP 2000541689A JP 2002510119 A5 JP2002510119 A5 JP 2002510119A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000541689A
Other languages
Japanese (ja)
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JP2002510119A (ja
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Publication date
Priority claimed from US09/053,716 external-priority patent/US6038166A/en
Application filed filed Critical
Publication of JP2002510119A publication Critical patent/JP2002510119A/ja
Publication of JP2002510119A5 publication Critical patent/JP2002510119A5/ja
Pending legal-status Critical Current

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JP2000541689A 1998-04-01 1999-03-30 高分解能多ビットパーセルメモリ Pending JP2002510119A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/053,716 1998-04-01
US09/053,716 US6038166A (en) 1998-04-01 1998-04-01 High resolution multi-bit-per-cell memory
PCT/US1999/006984 WO1999050853A1 (en) 1998-04-01 1999-03-30 High resolution multi-bit-per-cell memory

Publications (2)

Publication Number Publication Date
JP2002510119A JP2002510119A (ja) 2002-04-02
JP2002510119A5 true JP2002510119A5 (https=) 2006-05-11

Family

ID=21986062

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000541689A Pending JP2002510119A (ja) 1998-04-01 1999-03-30 高分解能多ビットパーセルメモリ

Country Status (5)

Country Link
US (1) US6038166A (https=)
EP (1) EP1068620A4 (https=)
JP (1) JP2002510119A (https=)
AU (1) AU3373099A (https=)
WO (1) WO1999050853A1 (https=)

Families Citing this family (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6249481B1 (en) 1991-10-15 2001-06-19 Kabushiki Kaisha Toshiba Semiconductor memory device
US6222762B1 (en) * 1992-01-14 2001-04-24 Sandisk Corporation Multi-state memory
US6278633B1 (en) 1999-11-05 2001-08-21 Multi Level Memory Technology High bandwidth flash memory that selects programming parameters according to measurements of previous programming operations
TW477949B (en) * 1999-12-20 2002-03-01 Winbond Electronics Corp Data processing system
US6532556B1 (en) * 2000-01-27 2003-03-11 Multi Level Memory Technology Data management for multi-bit-per-cell memories
US6259627B1 (en) 2000-01-27 2001-07-10 Multi Level Memory Technology Read and write operations using constant row line voltage and variable column line load
US6363008B1 (en) 2000-02-17 2002-03-26 Multi Level Memory Technology Multi-bit-cell non-volatile memory with maximized data capacity
US6396744B1 (en) 2000-04-25 2002-05-28 Multi Level Memory Technology Flash memory with dynamic refresh
US6856568B1 (en) 2000-04-25 2005-02-15 Multi Level Memory Technology Refresh operations that change address mappings in a non-volatile memory
US7079422B1 (en) 2000-04-25 2006-07-18 Samsung Electronics Co., Ltd. Periodic refresh operations for non-volatile multiple-bit-per-cell memory
US6639826B2 (en) * 2000-12-31 2003-10-28 Texas Instruments Incorporated Memory cell operation using ramped wordlines
US6466476B1 (en) 2001-01-18 2002-10-15 Multi Level Memory Technology Data coding for multi-bit-per-cell memories having variable numbers of bits per memory cell
US6504750B1 (en) 2001-08-27 2003-01-07 Micron Technology, Inc. Resistive memory element sensing using averaging
US6650592B2 (en) * 2001-11-29 2003-11-18 International Business Machines Corporation Data processing system, method, and product for automatically performing timing checks on a memory cell using a static timing tool
US6985372B1 (en) * 2002-04-23 2006-01-10 Alta Analog, Inc. Analog content addressable memory (CAM) employing analog nonvolatile storage
US6826102B2 (en) * 2002-05-16 2004-11-30 Micron Technology, Inc. Noise resistant small signal sensing circuit for a memory device
US6813208B2 (en) * 2002-07-09 2004-11-02 Micron Technology, Inc. System and method for sensing data stored in a resistive memory element using one bit of a digital count
US6829188B2 (en) * 2002-08-19 2004-12-07 Micron Technology, Inc. Dual loop sensing scheme for resistive memory elements
DE60317768T2 (de) * 2003-04-10 2008-11-27 Stmicroelectronics S.R.L., Agrate Brianza Verfahren zum Auslesen einer nichtflüchtigen Speichervorrichtung und zugehörige Vorrichtung
US7636857B2 (en) * 2004-05-24 2009-12-22 Interdigital Technology Corporation Data-mover controller with plural registers for supporting ciphering operations
US7535759B2 (en) * 2004-06-04 2009-05-19 Micron Technology, Inc. Memory system with user configurable density/performance option
DE602006020799D1 (de) * 2005-03-30 2011-05-05 Brother Ind Ltd Vorrichtung zum Befördern von Flüssigkeit und Verfahren zur Herstellung der Vorrichtung zum Befördern von Flüssigkeit
WO2006106577A1 (ja) * 2005-03-31 2006-10-12 Spansion Llc 半導体装置及びその制御方法
US7656710B1 (en) 2005-07-14 2010-02-02 Sau Ching Wong Adaptive operations for nonvolatile memories
US8812824B2 (en) 2007-06-13 2014-08-19 International Business Machines Corporation Method and apparatus for employing multi-bit register file cells and SMT thread groups
US9250899B2 (en) 2007-06-13 2016-02-02 International Business Machines Corporation Method and apparatus for spatial register partitioning with a multi-bit cell register file
US7936599B2 (en) * 2007-06-15 2011-05-03 Micron Technology, Inc. Coarse and fine programming in a solid state memory
US7630246B2 (en) * 2007-06-18 2009-12-08 Micron Technology, Inc. Programming rate identification and control in a solid state memory
US7916536B2 (en) 2007-07-26 2011-03-29 Micron Technology, Inc. Programming based on controller performance requirements
US7800951B2 (en) 2007-08-20 2010-09-21 Marvell World Trade Ltd. Threshold voltage digitizer for array of programmable threshold transistors
US7995412B2 (en) * 2007-09-07 2011-08-09 Micron Technology, Inc. Analog-to-digital and digital-to-analog conversion window adjustment based on reference cells in a memory device
US7830719B2 (en) * 2008-02-21 2010-11-09 Infineon Technologies Ag Power dependent memory access
US8464129B2 (en) * 2008-08-15 2013-06-11 Lsi Corporation ROM list-decoding of near codewords
US8407400B2 (en) 2008-11-12 2013-03-26 Micron Technology, Inc. Dynamic SLC/MLC blocks allocations for non-volatile memory
US7944754B2 (en) * 2008-12-31 2011-05-17 Sandisk Corporation Non-volatile memory and method with continuous scanning time-domain sensing
KR101001016B1 (ko) * 2009-01-29 2010-12-14 주식회사 하이닉스반도체 불휘발성 소자의 프로그램 방법
WO2011033701A1 (ja) * 2009-09-16 2011-03-24 パナソニック株式会社 半導体記憶装置
US20110286271A1 (en) * 2010-05-21 2011-11-24 Mediatek Inc. Memory systems and methods for reading data stored in a memory cell of a memory device
US8879329B2 (en) 2010-11-19 2014-11-04 Micron Technology, Inc. Program verify operation in a memory device
US8446786B2 (en) 2011-01-20 2013-05-21 Micron Technology, Inc. Outputting a particular data quantization from memory
EP3382556A1 (en) 2011-09-30 2018-10-03 INTEL Corporation Memory channel that supports near memory and far memory access
CN103946812B (zh) 2011-09-30 2017-06-09 英特尔公司 用于实现多级别存储器分级体系的设备和方法
EP2761480A4 (en) 2011-09-30 2015-06-24 Intel Corp APPARATUS AND METHOD FOR IMPLEMENTING MULTINIVE MEMORY HIERARCHY ON COMMON MEMORY CHANNELS
CN103946813B (zh) * 2011-09-30 2017-08-25 英特尔公司 基于使用统计量追踪的远存储器访问信号的生成
CN107608910B (zh) 2011-09-30 2021-07-02 英特尔公司 用于实现具有不同操作模式的多级存储器分级结构的设备和方法
US9190162B2 (en) * 2012-03-13 2015-11-17 Micron Technology, Inc. Nonconsecutive sensing of multilevel memory cells
US8749422B1 (en) * 2012-12-14 2014-06-10 Charles Cullen Moore Signal conversion using state sensitive device arrays
KR20150041393A (ko) * 2013-10-08 2015-04-16 에스케이하이닉스 주식회사 카운터 회로 및 그를 포함하는 반도체 장치
US9455029B2 (en) * 2014-05-23 2016-09-27 Micron Technology, Inc. Threshold voltage analysis
US11043823B2 (en) * 2017-04-06 2021-06-22 Tesla, Inc. System and method for facilitating conditioning and testing of rechargeable battery cells
US10546632B2 (en) * 2017-12-14 2020-01-28 Micron Technology, Inc. Multi-level self-selecting memory device
US11787173B2 (en) 2019-02-06 2023-10-17 Hewlett-Packard Development Company, L.P. Print component with memory circuit
CN113382873B (zh) 2019-02-06 2023-01-03 惠普发展公司，有限责任合伙企业 打印部件及用于打印部件的存储器电路
KR20210103576A (ko) 2019-02-06 2021-08-23 휴렛-팩커드 디벨롭먼트 컴퍼니, 엘.피. 통신하는 인쇄 컴포넌트
PL3717246T3 (pl) 2019-02-06 2021-11-08 Hewlett-Packard Development Company, L.P. Wiele układów połączonych z interfejsem
EP3717253B1 (en) 2019-02-06 2022-05-11 Hewlett-Packard Development Company, L.P. Memories of fluidic dies
US11373705B2 (en) * 2020-11-23 2022-06-28 Micron Technology, Inc. Dynamically boosting read voltage for a memory device
WO2023047745A1 (ja) * 2021-09-27 2023-03-30 ローム株式会社 半導体装置、電子機器、車両

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4404655A (en) * 1981-01-28 1983-09-13 General Instrument Corporation Data sense apparatus for use in multi-threshold read only memory
US5268870A (en) * 1988-06-08 1993-12-07 Eliyahou Harari Flash EEPROM system and intelligent programming and erasing methods therefor
US5095344A (en) * 1988-06-08 1992-03-10 Eliyahou Harari Highly compact eprom and flash eeprom devices
US5043940A (en) * 1988-06-08 1991-08-27 Eliyahou Harari Flash EEPROM memory systems having multistate storage cells
US5293560A (en) * 1988-06-08 1994-03-08 Eliyahou Harari Multi-state flash EEPROM system using incremental programing and erasing methods
US5172338B1 (en) * 1989-04-13 1997-07-08 Sandisk Corp Multi-state eeprom read and write circuits and techniques
US5163021A (en) * 1989-04-13 1992-11-10 Sundisk Corporation Multi-state EEprom read and write circuits and techniques
US5218569A (en) * 1991-02-08 1993-06-08 Banks Gerald J Electrically alterable non-volatile memory with n-bits per memory cell
US5337275A (en) * 1992-10-30 1994-08-09 Intel Corporation Method for releasing space in flash EEPROM memory array to allow the storage of compressed data
CN1147866C (zh) * 1994-06-02 2004-04-28 英特尔公司 含多级单元的快擦存储器的读出电路
US5539690A (en) * 1994-06-02 1996-07-23 Intel Corporation Write verify schemes for flash memory with multilevel cells
US5508958A (en) * 1994-09-29 1996-04-16 Intel Corporation Method and apparatus for sensing the state of floating gate memory cells by applying a variable gate voltage
US5694356A (en) * 1994-11-02 1997-12-02 Invoice Technology, Inc. High resolution analog storage EPROM and flash EPROM
US5563828A (en) * 1994-12-27 1996-10-08 Intel Corporation Method and apparatus for searching for data in multi-bit flash EEPROM memory arrays
US5541886A (en) * 1994-12-27 1996-07-30 Intel Corporation Method and apparatus for storing control information in multi-bit non-volatile memory arrays
JP3336813B2 (ja) * 1995-02-01 2002-10-21 ソニー株式会社 不揮発性半導体メモリ装置
US5594691A (en) * 1995-02-15 1997-01-14 Intel Corporation Address transition detection sensing interface for flash memory having multi-bit cells
JP2689948B2 (ja) * 1995-04-28 1997-12-10 日本電気株式会社 多値メモリセルを有する半導体記憶装置
US5671388A (en) * 1995-05-03 1997-09-23 Intel Corporation Method and apparatus for performing write operations in multi-level cell storage device
TW389909B (en) * 1995-09-13 2000-05-11 Toshiba Corp Nonvolatile semiconductor memory device and its usage
KR0172831B1 (ko) * 1995-09-18 1999-03-30 문정환 비휘발성 메모리를 프로그램하는 방법
KR100239870B1 (ko) * 1995-09-28 2000-03-02 다카노 야스아키 기억 분해능을 가변할 수 있는 불휘발성 다치 메모리 장치
US5748533A (en) * 1996-03-26 1998-05-05 Invoice Technology, Inc. Read circuit which uses a coarse-to-fine search when reading the threshold voltage of a memory cell
US5640350A (en) * 1996-05-01 1997-06-17 Iga; Adam Sempa Multi-bit dynamic random access memory cell storage
US5818757A (en) * 1996-07-22 1998-10-06 Invox Technology Analog and multi-level memory with reduced program disturb
KR100226769B1 (ko) * 1996-11-19 1999-10-15 김영환 다중 비트 셀의 데이타 센싱장치 및 방법
KR100226746B1 (ko) * 1996-12-30 1999-10-15 구본준 다중비트셀의데이타센싱장치및방법
US5801991A (en) * 1997-03-31 1998-09-01 Intel Corporation Deselected word line that floats during MLC programming of a flash memory

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