JP2002367892A - Electron beam exposure apparatus and method, and method for manufacturing semiconductor element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an electronic beam exposure apparatus for detecting a fault of a buffer memory which stores exposure data of an exposure pattern data. SOLUTION: The electron beam exposure apparatus is provided for exposing a wafer to the beam. The apparatus comprises a supervision controller for supervision controlling a wafer exposure unit, a first buffer memory for temporarily holding exposure data of data of the exposure pattern to be exposed on the wafer, a second buffer memory for temporarily holding wafer exposure data a first exposure unit for irradiating a wafer with a wafer electron beam based on the wafer exposure data output from the first buffer memory, and a first comparator for comparing the wafer exposure data output from the first buffer memory with wafer exposure data output from the second buffer memory to inform a comparison result to a wafer supervision controller.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to an electron beam exposure apparatus, an electron beam exposure method, and a semiconductor device manufacturing method. In particular, the present invention relates to an electron beam exposure apparatus, an electron beam exposure method, and a semiconductor element manufacturing method for detecting an abnormality in a buffer memory that stores exposure data as exposure pattern data.

[0002]

2. Description of the Related Art An electron beam exposure apparatus has mechanical parts such as an electron optical lens barrel and a wafer stage, and hardware parts such as a digital control unit and an analog amplifier. Can occur. And
In order to accurately expose a wafer in an electron beam exposure apparatus, it is necessary to reliably detect abnormalities in these apparatuses.

For example, an electron beam exposure apparatus disclosed in Japanese Patent Application Laid-Open No. 8-279450 discloses a buffer memory for temporarily storing exposure data stored in a hard disk, and an exposure data output from the buffer memory in shot units. Two pattern generators that output the divided shot data, a first comparator that compares the two shot data output by each of the two pattern generators, and shot data output by each of the two pattern generators. Two pattern correction units for correcting and outputting, a second comparing unit for comparing two shot data output from each of the two pattern correction units, and a shot data output from each of the two pattern correction units. Exposure 2
And a third comparing unit that compares the patterns exposed by the two exposing units. The electron beam exposure apparatus detects an abnormality in data based on the comparison result by the first comparison unit, the comparison result by the second comparison unit, and the comparison result by the third comparison unit, and causes an occurrence of the apparatus abnormality. To identify.

[0004]

However, the electron beam exposure apparatus disclosed in Japanese Patent Application Laid-Open No. 8-279450 is based on the premise that the exposure data output from the buffer memory is normal. Therefore, in the electron beam exposure apparatus, the buffer memory does not operate normally,
When an abnormality occurs in the exposure data output from the buffer memory, the abnormality of the data cannot be detected, and the cause of the apparatus abnormality cannot be specified.

Accordingly, the present invention provides an electron beam exposure apparatus, an electron beam exposure method,
And a method for manufacturing a semiconductor device.
This object is achieved by a combination of features described in the independent claims. The dependent claims define further advantageous embodiments of the present invention.

[0006]

According to a first aspect of the present invention, there is provided an electron beam exposure apparatus for exposing a wafer with an electron beam. A first buffer memory for temporarily storing exposure data that is data of an exposure pattern to be exposed on the wafer, a second buffer memory for temporarily storing exposure data, and a first buffer memory based on the exposure data output from the first buffer memory. A first exposure unit that irradiates the wafer with an electron beam, and compares the exposure data output from the first buffer memory with the exposure data output from the second buffer memory, and notifies the overall control unit of the comparison result. A comparison unit.

The first comparing section notifies the general control section as to whether or not the exposure data output from the first buffer memory matches the exposure data output from the second buffer memory as a comparison result. The unit may store the comparison result in association with the exposure area exposed based on the exposure data.

The first comparing section may compare the exposure data output from the first buffer memory with the exposure data output from the second buffer memory in bit units.

A second exposure section for irradiating another wafer with an electron beam based on the exposure data output from the first buffer memory; and a shot data obtained by decomposing the exposure data output from the first buffer memory into shot units. A first pattern generating unit that generates the shot data; a second pattern generating unit that generates shot data obtained by decomposing the exposure data output from the first buffer memory into shot units; a shot data output from the first pattern generating unit; The image processing apparatus may further include a second comparing unit that compares the shot data output from the two-pattern generating unit and notifies the overall control unit of the comparison result.

The second comparing section notifies the general control section as a comparison result as to whether or not the shot data output from the first pattern generating section matches the shot data output from the second pattern generating section. The general control unit may store the comparison result notified from the second comparison unit in association with the comparison result notified from the first comparison unit.

A second exposure unit for irradiating another wafer with an electron beam based on the exposure data output from the second buffer memory may be further provided.

A first pattern correction section for correcting shot data output from the first pattern generation section and a second pattern correction section for correcting shot data output from the second pattern generation section.
The pattern correction unit further includes a third comparison unit that compares shot data output from the first pattern correction unit with shot data output from the second pattern correction unit, and notifies the overall control unit of the comparison result. May be provided.

The third comparing unit notifies the general control unit as to whether or not the shot data output by the first pattern correcting unit matches the shot data output by the second pattern correcting unit as a comparison result. The general control unit may store the comparison result notified from the third comparing unit in association with the comparison result notified from the first comparing unit.

According to a second aspect of the present invention, there is provided an electron beam exposure method for exposing a wafer with an electron beam, comprising: writing exposure data, which is data of an exposure pattern to be exposed on the wafer, into a first buffer memory; A first writing step, a second writing step of writing exposure data to a second buffer memory, an exposure step of irradiating a wafer with an electron beam based on the exposure data output by the first buffer memory;
And comparing the exposure data output from the buffer memory with the exposure data output from the second buffer memory.

According to a third aspect of the present invention, there is provided a semiconductor device manufacturing method for manufacturing a semiconductor device by exposing a wafer with an electron beam, wherein exposure data, which is data of an exposure pattern to be exposed on the wafer, is stored in a first memory. A first writing step of writing to the buffer memory, a second writing step of writing exposure data to the second buffer memory, an exposure step of irradiating the wafer with an electron beam based on the exposure data output by the first buffer memory; And comparing the exposure data output from the first buffer memory with the exposure data output from the second buffer memory.

The comparing step includes a step of outputting as a comparison result whether or not the exposure data output from the first buffer memory matches the exposure data output from the second buffer memory, based on the exposure data. A storage step of storing the comparison result in association with the exposure area to be exposed.

A determining step of determining whether or not to inspect the exposure pattern exposed on the exposure area based on the comparison result stored in the storing step; The method may further include an inspection step of inspecting whether the exposure pattern is exposed.

The above summary of the present invention does not enumerate all the necessary features of the present invention, and these special sub-combinations can also constitute the present invention.

[0019]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described through embodiments of the present invention. However, the following embodiments do not limit the claimed invention and have the features described in the embodiments. Not all combinations are essential to the solution of the invention.

FIG. 1 is a configuration diagram of an electron beam exposure apparatus 100 according to one embodiment of the present invention. The electron beam exposure apparatus 100 includes exposure units 150a and 150b for performing a predetermined exposure process on the wafer 64 with an electron beam, and a control system 140 for controlling the operation of each component of the exposure units 150a and 150b.

The exposure units 150a and 150b are
An electron beam irradiation system 110 for irradiating a predetermined electron beam therein, and a mask projection system for deflecting the electron beam irradiated from the electron beam irradiation system 110 and adjusting an image forming position of the electron beam near the mask 30. 112
A focusing lens system 114 for adjusting an image forming position of the electron beam in the vicinity of the wafer 64; and an electron beam that has passed through the mask 30 is deflected to a predetermined area of the wafer 64 placed on the wafer stage 62. An electron optical system including a wafer projection system 116 that adjusts the direction and size of the image of the pattern transferred to 64 is provided.

The exposure units 150a and 150b include a mask stage 72 on which a mask 30 having a plurality of blocks each having a pattern to be exposed on the wafer 64 is mounted, and a mask stage driving unit for driving the mask stage 72. 68, a stage system including a wafer stage 62 on which a wafer 64 on which a pattern is to be exposed is mounted, and a wafer stage driving unit 70 for driving the wafer stage 62. Further, the exposure units 150a and 150b have an electron detector 60 that detects electrons scattered from the wafer stage 62 side and converts the electrons into an electric signal corresponding to the amount of scattered electrons for adjusting the electron optical system.

The electron beam irradiation system 110 has a first electron lens 14 for determining a focal position of the electron beam by the electron gun 12 for generating the electron beam, and a rectangular opening (slit) for passing the electron beam. Slit part 1
6. Since it takes a predetermined time for the electron gun 12 to generate a stable electron beam, the electron gun 12 may always generate an electron beam during the exposure processing.
It is preferable that the slit is formed in accordance with the shape of a block including a predetermined pattern formed on the mask 30. In FIG. 1, the optical axis of the electron beam when the electron beam emitted from the electron beam irradiation system 110 is not deflected by the electron optical system is represented by a chain line A.

The mask projection system 112 includes a first deflector 18, a second deflector 22, and a third deflector 26 as a mask deflection system for deflecting the electron beam, and a mask focus for adjusting the focus of the electron beam. It has a second electron lens 20 as a system and a first blanking electrode 24. The first deflector 18 and the second deflector 22 perform deflection for irradiating a predetermined region on the mask 30 with an electron beam. For example, the predetermined area may be a block having a pattern to be transferred to the wafer 64. As the electron beam passes through the pattern, the cross-sectional shape of the electron beam becomes the same as the pattern. An image of the electron beam passing through the block on which the predetermined pattern is formed is defined as a pattern image. The third deflector 26 deflects the trajectory of the electron beam passing through the first deflector 18 and the second deflector 22 substantially parallel to the optical axis A. The second electron lens 20 has a function of forming an image of the opening of the slit section 16 on the mask 30 placed on the mask stage 72.

The first blanking electrode 24 has a mask 30
The electron beam is deflected so that the electron beam does not impinge on the block formed. The first blanking electrode 24
It is preferable to deflect the electron beam so that the electron beam does not hit the mask 30. Since the pattern formed on the mask 30 deteriorates as the electron beam is irradiated, the first blanking electrode 24
The electron beam is deflected except when the image is transferred onto the electron beam. Therefore, the deterioration of the mask 30 can be prevented. The focus adjustment lens system 114 has a third electronic lens 28 and a fourth electronic lens 32. The third electronic lens 28 and the fourth electronic lens 32 focus the electron beam on the wafer 64. The wafer projection system 116 includes a fifth electronic lens 40, a sixth electronic lens 46, and a seventh electronic lens 50.
, An eighth electron lens 52, a ninth electron lens 66, a fourth deflector 34, a fifth deflector 38, and a sixth deflector 42.
, A main deflector 56, a sub deflector 58, a second blanking electrode 36, and a round aperture section 48.

The pattern image is rotated under the influence of the electric field and the magnetic field. The fifth electron lens 40 adjusts the amount of rotation of the pattern image of the electron beam that has passed through a predetermined block of the mask 30. The sixth electronic lens 46 and the seventh electronic lens 50 adjust the reduction ratio of the pattern image transferred to the wafer 64 with respect to the pattern formed on the mask 30.
The eighth electronic lens 52 and the ninth electronic lens 66 function as objective lenses. Fourth deflector 34 and sixth deflector 4
2 deflects the electron beam in the direction of the optical axis A downstream of the mask 30 with respect to the traveling direction of the electron beam. Fifth
The deflector deflects the electron beam so as to be substantially parallel to the optical axis A. The main deflector 56 and the sub deflector 58 are configured to irradiate a predetermined area on the wafer 64 with an electron beam.
Deflection of the electron beam. In the present embodiment, the main deflector 56
Is used to deflect an electron beam between subfields including a plurality of areas (shot areas) that can be irradiated with one shot of the electron beam. Used.

The round aperture section 48 has a circular opening (round aperture). The second blanking electrode deflects the electron beam so as to hit the outside of the round aperture. Therefore, the second blanking electrode 3
No. 6 can prevent the electron beam from traveling downstream from the round aperture section 48 in the traveling direction of the electron beam. Since the electron gun 12 always emits an electron beam during the exposure processing period, the second blanking electrode 36
Is to deflect the electron beam so that the electron beam does not travel downstream from the round aperture unit 48 when changing the pattern to be transferred to the wafer 64 and further when changing the area of the wafer 64 where the pattern is exposed. Is desirable.

The control system 140 includes a common processing unit 200, individual processing units 300a and 300b, and an individual control unit 120a.
And 120b. Individual control units 120a and 12
0b denotes a deflection control unit 82 and a mask stage control unit 84
, A blanking electrode control unit 86, an electron lens control unit 88, a reflected electron processing unit 90, and a wafer stage control unit 92. The common processing unit 200 converts the exposure data stored in the hard disk into the individual processing units 300a and 300
0b. The individual processing units 300a and 300b
Based on the exposure data supplied from the common processing unit 200, control data relating to the exposure processing is supplied to each control unit of the individual control units 120a and 120b. The deflection control unit 82 includes a first deflector 18, a second deflector 22, a third deflector 26, a fourth deflector 34, a fifth deflector 38, and a sixth deflector.
The deflector 42, the main deflector 56, and the sub deflector 58 are controlled. The mask stage control unit 84 controls the mask stage driving unit 68 to move the mask stage 72.

The blanking electrode controller 86 controls the first blanking electrode 24 and the second blanking electrode 36. In the present embodiment, the first blanking electrode 24 and the second blanking electrode 36 are controlled so as to irradiate the wafer 64 with an electron beam during exposure, and to prevent the electron beam from reaching the wafer 64 except during exposure. Is desirable. The electronic lens control unit 88 controls the first electronic lens 14,
A second electronic lens 20, a third electronic lens 28, a fourth electronic lens 32, a fifth electronic lens 40, a sixth electronic lens 46,
The power supplied to the seventh electronic lens 50, the eighth electronic lens 52, and the ninth electronic lens 66 is controlled. The backscattered electron processing unit 90 detects digital data indicating the amount of electrons based on the electric signal detected by the backscattered electron detection unit 60.
The wafer stage control unit 92 includes the wafer stage driving unit 7
By 0, the wafer stage 62 is moved to a predetermined position.

An electron beam exposure apparatus 10 according to this embodiment
The operation of 0 will be described. A mask 30 having a plurality of blocks in which a predetermined pattern is formed is placed on the mask stage 72, and the mask 30 is fixed at a predetermined position. The exposure processing may be performed in an oxidizing atmosphere such as an ozone gas or an O ₂ plasma gas. At this time, it is preferable that the surface of the mask 30 is covered with a material that is not oxidized by an oxidizing ozone gas or the like. Further, on the wafer stage 62, a wafer 64 to be subjected to exposure processing is mounted. The wafer stage control unit 92 moves the wafer stage 62 by the wafer stage driving unit 70 so that the region to be exposed on the wafer 64 is located near the optical axis A. In addition, electron gun 1
2 always emits an electron beam during the exposure processing period, so that the blanking electrode control unit 86 prevents the electron beam that has passed through the opening of the slit 16 from being irradiated onto the mask 30 and the wafer 64 before the start of exposure. First
The blanking electrode 24 and the second blanking electrode 36 are controlled. In the mask projection system 112, the electron lens 20 and the deflectors (18, 22, 26) are adjusted so that the block on which the pattern to be transferred to the wafer 64 is formed can be irradiated with the electron beam. Focus adjustment lens system 114
In, the electron lenses (28, 32) are adjusted so that the electron beam is focused on the wafer 64. In the wafer projection system 116, the electron lens (4
0, 46, 50, 52, 66) and deflectors (34, 3
8, 42, 56, and 58) are adjusted so that a pattern image can be transferred to a predetermined region of the wafer 64.

Mask projection system 112, focus adjustment lens system 1
After the adjustment of 14 and the wafer projection system 116, the blanking electrode control unit 86 stops the deflection of the electron beam by the first blanking electrode 24 and the second blanking electrode 36. As a result, the electron beam is applied to the wafer 64 via the mask 30 as described below. The electron gun 12 generates an electron beam, and the first electron lens 14 adjusts the focal position of the electron beam to irradiate the slit portion 16. Then, the first deflector 18 and the second deflector 22 apply the electron beam passing through the opening of the slit 16 to the mask 30.
Is deflected so as to irradiate a predetermined area where a pattern to be transferred is formed. The electron beam that has passed through the opening of the slit portion 16 has a rectangular cross-sectional shape. The electron beam deflected by the first deflector 18 and the second deflector 22 is deflected by the third deflector 26 so as to be substantially parallel to the optical axis A. The electron beam is transmitted to the second electron lens 20.
Accordingly, the adjustment is performed so that the image of the opening of the slit portion 16 is formed in a predetermined area on the mask 30.

The electron beam passing through the pattern formed on the mask 30 is deflected in a direction approaching the optical axis A by the fourth deflector 34 and the sixth deflector 42, and is deflected by the fifth deflector 38 by the fifth deflector 38. It is deflected so as to be substantially parallel to A. Also, the electron beam is transmitted to the third electron lens 28 and the fourth electron lens 28.
The electron lens 32 adjusts the image of the pattern formed on the mask 30 so that it is focused on the surface of the wafer 64, the fifth electronic lens 40 adjusts the amount of rotation of the pattern image, and the sixth electronic lens 46 The reduction ratio of the pattern image is adjusted by the seven-electron lens 50. Then, the electron beam is deflected by the main deflector 56 and the sub deflector 58 so as to irradiate a predetermined shot area on the wafer 64. In the present embodiment, the main deflector 56 deflects the electron beam between subfields including a plurality of shot areas, and the sub deflector 58 deflects the electron beam between shot areas in the subfield. The electron beam deflected to a predetermined shot area is adjusted by the electron lens 52 and the electron lens 66 and irradiated on the wafer 64.
As a result, an image of the pattern formed on the mask 30 is transferred to a predetermined shot area on the wafer 64.

After a predetermined exposure time has elapsed, the blanking electrode controller 86 controls the first blanking electrode 2 so that the electron beam does not irradiate the mask 30 and the wafer 64.
The electron beam is deflected by controlling the fourth and second blanking electrodes 36. By the above process, the pattern formed on the mask 30 is exposed to a predetermined shot area on the wafer 64. In order to expose the pattern formed on the mask 30 to the next shot area, in the mask projection system 112, the electron lens 20 and the deflector (18, 2) are used.
(2, 26) are adjusted so that a block having a pattern to be transferred to the wafer 64 can be irradiated with an electron beam.
In the focus adjustment lens system 114, the electronic lens (28,
32) is adjusted so that the electron beam is focused on the wafer 64. In the wafer projection system 116, the electron lens (40, 46, 50, 52, 66) and the deflector (34, 38, 42, 56, 58)
4 is adjusted so that a pattern image can be transferred to a predetermined area.

More specifically, the sub deflector 58 adjusts the electric field so that the pattern image generated by the mask projection system 112 is exposed to the next shot area. Thereafter, the pattern is exposed to the shot area as described above. After exposing the pattern to all of the shot areas where the pattern in the subfield is to be exposed, the main deflector 56 adjusts the magnetic field so that the pattern can be exposed in the next subfield. The electron beam exposure apparatus 100 can expose a desired circuit pattern to the wafer 64 by repeatedly performing this exposure processing.

The electron beam exposure apparatus 100 which is an electron beam processing apparatus according to the present invention may be an electron beam exposure apparatus using a variable rectangle, or an electron beam exposure apparatus using a blanking aperture array device. It may be a device. Further, the electron beam exposure apparatus 100 according to the present embodiment includes two individual processing units 300a and 300
b, two individual control units 120a and 120b, and two exposure units 150a and 150b. The electron beam exposure apparatus according to the present invention includes an individual processing unit, an individual control unit,
And an electron beam exposure apparatus including three or more exposure units. In the electron beam exposure apparatus 100 according to the present embodiment, the exposure unit 150a and the exposure unit 150b
In the electron beam exposure apparatus according to the present invention, a plurality of exposure units may simultaneously expose the same wafer.

FIG. 2 is a configuration diagram of the control system 140 according to the present embodiment. The common processing unit 200 includes a hard disk drive (HDD) 202, an overall control unit 130,
SI control unit 204, address control unit 206, sequence control unit 208, exposure data control unit 210,
Buffer memory 212 and second buffer memory 214
And a first comparison unit 216. In addition, the individual processing unit 3
00a includes a pattern generation unit 302a and a pattern correction unit 304a. The individual processing unit 300b includes a pattern generation unit 302b and a pattern correction unit 304b.

The general control unit 130 is, for example, an engineering workstation, and controls the electron beam exposure apparatus 100 in a comprehensive manner. In the exposure processing, the overall control unit 130 first reads out exposure data, which is data of an exposure pattern to be exposed on the wafer 64, from the hard disk drive 202 and supplies the data to the SCSI control unit 204. Then, the SCSI control unit 204 controls the overall control unit 13.
0 to the first buffer memory 2
The format is converted into the format of the twelfth and second buffer memories 214 and supplied to the first buffer memory 212 and the second buffer memory 214 in synchronization with the address generated by the address control unit 206. And the first buffer memory 2
The twelfth and second buffer memories 214 temporarily store the exposure data received from the SCSI control unit 204.

Next, the overall control unit 130 sends an exposure start flag to the exposure data control unit 210 via the sequence control unit 208. Then, the exposure data control unit 210
Upon receiving the exposure start flag, supplies the address where the exposure data of the exposure pattern to be exposed is stored to the first buffer memory 212 and the second buffer memory 214. Then, the first buffer memory 212 stores the exposure data corresponding to the address received from the exposure data control unit 210 in the first comparison unit 216 and the pattern generation unit 3.
02a. Also, the second buffer memory 214
Supplies the exposure data corresponding to the address received from the exposure data control unit 210 to the first comparison unit 216.

Then, the first comparing section 216 compares the exposure data output from the first buffer memory 212 with the exposure data output from the second buffer memory 214, and notifies the overall control section 130 of the comparison result. Specifically, the first comparing unit 216 determines whether the exposure data output from the first buffer memory 212 matches the exposure data output from the second buffer memory 214 as a comparison result, as the overall control unit 130. Notify. Then, the overall control unit 130 stores the comparison result received from the first comparing unit 216 in association with the exposure area to be exposed based on the exposure data to be compared. The first comparing unit 216 compares the exposure data output from the first buffer memory 212 with the exposure data output from the second buffer memory 214 on a bit-by-bit basis. By performing the comparison on a bit-by-bit basis, defective portions of the first buffer memory 212 and the second buffer memory 214 can be specified.

Next, the pattern generation section 302a generates shot data obtained by dividing the exposure data output from the first buffer memory 212 into shot units, and supplies the shot data to the pattern correction section 304a and the individual control section 120a. And
The pattern correction unit 304a corrects the shot data received from the pattern generation unit 302a, and
0a. Each control unit of the individual control unit 120a includes a pattern generation unit 302a and a pattern correction unit 30a.
Each part of the exposure unit 150a is controlled based on the shot data received from 4a. Then, the exposure unit 150a
Irradiates the wafer with an electron beam to expose a desired exposure pattern.

The pattern generating section 302b generates shot data obtained by dividing the exposure data output from the first buffer memory 212 into shot units, and supplies the shot data to the pattern correcting section 304b and the individual control section 120b. And
The pattern correction unit 304b corrects the shot data received from the pattern generation unit 302b, and
0b. Each control unit of the individual control unit 120b includes a pattern generation unit 302b and a pattern correction unit 30.
Each part of the exposure unit 150b is controlled based on the shot data received from the exposure unit 150b. Then, the exposure unit 150b
Irradiates the wafer with an electron beam to expose a desired exposure pattern.

The electron beam exposure apparatus 10 according to the present embodiment
According to 0, the first comparing unit 216 compares the exposure data output from the first buffer memory 212 and the exposure data output from the second buffer memory 214, so that the overall control unit 130
An abnormality in the buffer memory 212 or the second buffer memory 214 can be detected. In addition, the electron beam exposure apparatus 100 according to the present embodiment includes the second buffer memory 214 that holds exposure data for comparison,
Without delaying the exposure process, the first buffer memory 2
12 and the exposure data output from the second buffer memory 214 can be compared.

FIG. 3 is a configuration diagram of the control system 140 according to the present embodiment. The common processing unit 200 includes a second comparing unit 218
And a third comparing unit 220. The second comparing unit 218 compares the shot data output by the pattern generating unit 302a with the shot data output by the pattern generating unit 302b, and notifies the overall control unit 130 of the comparison result. The second comparing section 218 includes the pattern generating section 302
a the shot data output by the
Whether the shot data output by b matches the shot data is notified to the overall control unit 130 as a comparison result. Then, the overall control unit 130 stores the comparison result notified from the second comparing unit 218 in association with the comparison result notified from the first comparing unit 216. The overall control unit 130 can detect data abnormality based on the comparison result notified from the first comparison unit 216 and the comparison result notified from the second comparison unit 218, and can also generate an apparatus abnormality. The cause can be identified.

The third comparing section 220 compares the shot data output from the pattern correcting section 304a with the shot data output from the pattern correcting section 304b, and notifies the overall control section 130 of the comparison result. Third comparison unit 220
The integrated control unit 13 determines whether the shot data output from the pattern correction unit 304a matches the shot data output from the pattern correction unit 304b as a comparison result.
Notify 0. Then, the overall control unit 130 stores the comparison result notified from the third comparing unit 218 in association with the comparison result notified from the first comparing unit 216. The overall control unit 130 can detect a data abnormality based on the comparison result notified from the first comparison unit 216 and the comparison result notified from the third comparison unit 218, and can also generate a device abnormality. The cause can be identified.

FIG. 4 is a flowchart of a semiconductor manufacturing process for manufacturing a semiconductor device from a wafer. In S10, the flowchart starts. In the photoresist coating step, a photoresist is coated on the upper surface of the wafer (S1).
2). Then, the wafer on which the photoresist has been applied is placed on the wafer stage 62 in the electron beam exposure apparatus 100 shown in FIG. In the exposure step, as described with reference to FIG. 1, the pattern image is exposed and transferred onto the wafer by the electron beam passing through the mask 30 (S14).

Next, in the developing step, the exposed wafer is
It is immersed in a developer and developed to remove excess resist. Then, in the etching step, the silicon substrate, the insulating film or the conductive film existing in the region where the photoresist on the wafer is removed is etched by anisotropic etching using plasma (S18). Then, in the ion implantation step, impurities such as boron and arsenic are implanted into the wafer to form semiconductor elements such as transistors and diodes (S20). In the heat treatment step, heat treatment is performed on the wafer to activate the implanted impurities (S2).
2). In the cleaning step, the wafer is cleaned with a chemical to remove organic contaminants and metal contaminants on the wafer (S24). In the film forming step, a conductive film or an insulating film is formed to form a wiring layer and an insulating layer between wirings (S26). By combining and repeatedly performing the photoresist coating step (S12) to the film forming step (S26), a semiconductor element having an element isolation region, an element region, and a wiring layer on a wafer can be manufactured. And
In the assembling step, a wafer on which a required circuit is formed is cut out, and chips are assembled (S28). And S
At 30, the semiconductor device manufacturing flow ends.

FIG. 5 is a flowchart of the exposing step (S14) for exposing the wafer to a pattern image. First, SC
The SI control unit 204 writes the exposure data received from the general control unit 130 into the first buffer memory 212 and the second buffer memory 214 (S100). Then, the exposure unit 150a irradiates the wafer with an electron beam based on the exposure data output from the first buffer memory 212,
The pattern is exposed (S102). Also, the first comparison unit 2
The step 16 compares the exposure data output from the first buffer memory 212 with the exposure data output from the second buffer memory (S104). In the comparison step (S104),
The first comparing section 216 outputs as a comparison result whether or not the exposure data output from the first buffer memory 212 matches the exposure data output from the second buffer memory. Then, the overall control unit 130 associates the exposure area to be exposed based on the exposure data that has been compared,
The comparison result output by the first comparing unit 216 is stored (S1
06). Then, the overall control unit 130 performs the storage step (S1
Based on the comparison result stored in step 06), it is determined whether or not to inspect the exposed exposure pattern (S10).
8). Then, based on the determination result in the determination step (S108), it is checked whether or not a desired exposure pattern is exposed (S112).

In the judging step (S108), when the exposure data output from the first buffer memory 212 and the exposure data output from the second buffer memory match, the overall control unit 130 performs exposure based on the exposure data. It is determined that the exposed exposure pattern is to be inspected, and the inspection step (S11)
Move on to the process of 2). In the determining step (S108), when the exposure data output from the first buffer memory 212 and the exposure data output from the second buffer memory do not match, the overall control unit 130 performs exposure based on the exposure data. It is determined that the exposed pattern is not inspected, and the process proceeds to the photoresist removal step (S110). Then, in the photoresist application step (S12), the photoresist is applied again to the wafer from which the photoresist has been removed, and the wafer is exposed.

The electron beam exposure apparatus 10 according to the present embodiment
According to 0, the overall control unit 130 can determine whether or not the exposed exposure pattern needs to be inspected based on the comparison result by the first comparing unit 212. If the exposure data output from the first buffer memory 212 does not match the exposure data output from the second buffer memory,
Since the inspection step of inspecting the exposure pattern exposed based on the exposure data can be omitted, the time required for inspecting the exposure pattern can be reduced. As a result, the time required for manufacturing the semiconductor element can be reduced.

Although the present invention has been described with reference to the embodiment, the technical scope of the present invention is not limited to the scope described in the above embodiment. Various changes or improvements can be added to the above embodiment. It is apparent from the description of the appended claims that embodiments with such changes or improvements can be included in the technical scope of the present invention.

[0051]

As is apparent from the above description, according to the present invention, it is possible to provide an electron beam exposure apparatus for detecting an abnormality in a buffer memory for storing exposure data, which is exposure pattern data.

[Brief description of the drawings]

FIG. 1 is a configuration diagram of an electron beam exposure apparatus 100 according to an embodiment of the present invention.

FIG. 2 is a configuration diagram of a control system 140 according to the present embodiment.

FIG. 3 is a configuration diagram of a control system 140 according to the embodiment.

FIG. 4 is a flowchart of a semiconductor manufacturing process for manufacturing a semiconductor element from a wafer.

FIG. 5 shows an exposure step (S1) of exposing a pattern image to a wafer.
It is a flowchart of 4).

[Description of Reference Numerals] 10 housing, 12 electron gun, 14 first electron lens, 16 slit section, 18 first deflector, 20 second Electron lens, 22 ... second deflector, 24 ... first blanking deflector, 26 ... third deflector, 28 ... third electron lens, 30 ... mask, 32 ... 4th electron lens, 34 ... 4th deflector, 36 ... 2nd blanking deflector, 38 ... 5th deflector, 40 ... 5th electron lens, 42 ... 6th
Deflector, 46: sixth electronic lens, 48: round aperture, 50: seventh electron lens, 52 ...
Eighth electron lens, 56: Main deflector, 58: Sub deflector, 60: Electron detector, 62: Wafer stage, 64: Wafer, 66: Ninth electron lens , 6
Reference numeral 8: mask stage drive unit, 70: wafer stage drive unit, 72: mask stage, 82: deflection control unit, 84: mask stage control unit, 86 ...
・ Blanking electrode control unit, 88 ・ ・ ・ Electronic lens control unit, 90 ・ ・ ・ Reflection electron processing unit, 92 ・ ・ ・ Wafer stage control unit, 100 ・ ・ ・ Electron beam exposure apparatus, 110
... Electron beam irradiation system, 112 ... Projection system for mask, 114 ... Focus adjustment lens system, 116 ... Projection system for wafer, 120a ... Individual control unit, 120b ...
・ Individual control unit, 130 ・ ・ ・ Overall control unit, 140 ・ ・ ・
Control system, 150a exposure unit, 150b exposure unit, 200 common processing unit, 300a individual processing unit, 300b individual processing unit

Claims (12)

[Claims] 1. An electron beam exposure apparatus for exposing a wafer with an electron beam, comprising: an overall control unit that comprehensively controls the exposure apparatus; and exposure data that is data of an exposure pattern to be exposed on the wafer. A first buffer memory for temporarily storing, a second buffer memory for temporarily storing the exposure data, a second buffer memory for irradiating the wafer with the electron beam based on the exposure data output from the first buffer memory 1 exposure unit; the exposure data output by the first buffer memory;
An electron beam exposure apparatus, comprising: a first comparison unit that compares the exposure data output from the second buffer memory with the exposure data and notifies the general control unit of the comparison result. 2. The method according to claim 1, wherein the first comparing unit determines whether the exposure data output from the first buffer memory matches the exposure data output from the second buffer memory.
2. The integrated control unit is notified as the comparison result, and the integrated control unit stores the comparison result in association with an exposure area exposed based on the exposure data. 3. Electron beam exposure equipment. 3. The apparatus according to claim 2, wherein the first comparing unit compares the exposure data output from the first buffer memory with the exposure data output from the second buffer memory in bit units. Item 7. An electron beam exposure apparatus according to Item 1. 4. A second exposure section for irradiating another wafer on the wafer with an electron beam based on the exposure data output from the first buffer memory, and a shot processing section for exposing the exposure data output from the first buffer memory. A first pattern generation unit that generates shot data decomposed in units; a second pattern generation unit that generates shot data obtained by decomposing the exposure data output by the first buffer memory into shot units; A second comparing unit that compares the shot data output from the unit with the shot data output from the second pattern generating unit, and notifies the general control unit of a comparison result. The electron beam exposure apparatus according to claim 2, wherein 5. The second comparison unit determines whether the shot data output by the first pattern generation unit matches the shot data output by the second pattern generation unit. The overall control unit stores the comparison result notified from the second comparison unit in association with the comparison result notified from the first comparison unit. The electron beam exposure apparatus according to claim 4, wherein 6. The electron beam exposure according to claim 1, further comprising a second exposure unit that irradiates the another wafer with an electron beam based on the exposure data output from the second buffer memory. apparatus. 7. A first pattern correction unit for correcting the shot data output from the first pattern generation unit, and a second pattern correction unit for correcting the shot data output from the second pattern generation unit A third comparison unit that compares the shot data output from the first pattern correction unit with the shot data output from the second pattern correction unit, and notifies a comparison result to the general control unit; The electron beam exposure apparatus according to claim 6, further comprising: 8. The third comparison unit determines whether the shot data output by the first pattern correction unit matches the shot data output by the second pattern correction unit. The general control unit stores the comparison result notified from the third comparison unit in association with the comparison result notified from the first comparison unit. The electron beam exposure apparatus according to claim 7, wherein 9. An electron beam exposure method for exposing a wafer with an electron beam, comprising: a first writing step of writing exposure data, which is data of an exposure pattern to be exposed on the wafer, into a first buffer memory; A second writing step of writing the exposure data to the second buffer memory; an exposure step of irradiating the wafer with the electron beam based on the exposure data output by the first buffer memory; and an output of the first buffer memory. The exposure data;
Comparing the exposure data output from the second buffer memory with the exposure data. 10. A semiconductor device manufacturing method for manufacturing a semiconductor device by exposing a wafer with an electron beam, comprising: writing first exposure data, which is data of an exposure pattern to be exposed on the wafer, to a first buffer memory; Writing the exposure data into a second buffer memory, irradiating the wafer with the electron beam based on the exposure data output from the first buffer memory, The exposure data output by the buffer memory;
Comparing the exposure data output by the second buffer memory with the exposure data. 11. The comparing step includes determining whether the exposure data output from the first buffer memory matches the exposure data output from the second buffer memory.
The semiconductor device according to claim 10, further comprising a step of storing the comparison result in association with an exposure area exposed based on the exposure data, including a step of outputting the comparison result. Production method. 12. A judging step of judging whether or not to inspect an exposure pattern exposed on the exposure area based on the comparison result stored in the storing step, and based on a judgment result of the judging step. 12. The method according to claim 11, further comprising an inspection step of inspecting whether the exposure area is exposed to the desired exposure pattern.