JP2002363777A5 - - Google Patents

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JP2002363777A5
JP2002363777A5 JP2001169718A JP2001169718A JP2002363777A5 JP 2002363777 A5 JP2002363777 A5 JP 2002363777A5 JP 2001169718 A JP2001169718 A JP 2001169718A JP 2001169718 A JP2001169718 A JP 2001169718A JP 2002363777 A5 JP2002363777 A5 JP 2002363777A5
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Japan
Prior art keywords
weight
chlorite
copper
group
diethanolamine
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JP2001169718A
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Japanese (ja)
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JP4706081B2 (en
JP2002363777A (en
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Priority to JP2001169718A priority Critical patent/JP4706081B2/en
Priority claimed from JP2001169718A external-priority patent/JP4706081B2/en
Priority to CNB021222509A priority patent/CN1324164C/en
Priority to TW91111830A priority patent/TWI242608B/en
Publication of JP2002363777A publication Critical patent/JP2002363777A/en
Publication of JP2002363777A5 publication Critical patent/JP2002363777A5/ja
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Description

【特許請求の範囲】
【請求項1】 モノエタノールアミン、N−メチルエタノールアミン、N−エチルエタノールアミン、N−ブチルエタノールアミン、N,N−ジメチルエタノールアミン、N,N−ジエチルエタノールアミン、2−(2−ヒドロキシ)エトキシエタノールアミン、ジエタノールアミン、N−メチルジエタノールアミン、N−ブチルジエタノールアミン、トリエタノールアミン、プロパノールアミン、イソプロパノールアミン、ヒドロキシエチルピペラジンおよびアンモニア水溶液からなる群より選ばれた少なくとも1種を1〜40重量%、塩素酸、塩素酸塩、亜塩素酸、亜塩素酸塩、次亜塩素酸塩および次亜塩素酸塩からなる群より選ばれた少なくとも1種の酸化剤を1〜15重量%、アンモニウム塩を1〜10重量%ならびにアゾール化合物を0.1〜2重量%の濃度で混合してなる水溶液からなる銅または銅合金のエッチング剤。
【請求項2】銅または銅合金の表面に、モノエタノールアミン、N−メチルエタノールアミン、N−エチルエタノールアミン、N−ブチルエタノールアミン、N,N−ジメチルエタノールアミン、N,N−ジエチルエタノールアミン、2−(2−ヒドロキシ)エトキシエタノールアミン、ジエタノールアミン、N−メチルジエタノールアミン、N−ブチルジエタノールアミン、トリエタノールアミン、プロパノールアミン、イソプロパノールアミン、ヒドロキシエチルピペラジンおよびアンモニア水溶液からなる群より選ばれた少なくとも1種を1〜40重量%、塩素酸、塩素酸塩、亜塩素酸、亜塩素酸塩、次亜塩素酸塩および次亜塩素酸塩からなる群より選ばれた少なくとも1種の酸化剤を1〜15重量%、アンモニウム塩を1〜10重量%ならびにアゾール化合物を0.1〜2重量%の濃度で混合してなる水溶液を接触させ、前記表面を平滑にするエッチング法。
    [Claims]
    (1) Monoethanolamine, N-methylethanolamine, N-ethylethanolamine, N-butylethanolamine, N, N-dimethylethanolamine, N, N-diethylethanolamine, 2- (2-hydroxy) ethoxyethanolamine, diethanolamine , At least one member selected from the group consisting of N-methyldiethanolamine, N-butyldiethanolamine, triethanolamine, propanolamine, isopropanolamine, hydroxyethylpiperazine, and aqueous ammonia solution in an amount of 1 to 40% by weight, chloric acid, chlorate , At least one member selected from the group consisting of chlorite, chlorite, hypochlorite and hypochloriteOxidant1 to 15% by weight, Ammonium saltFrom 1 to 10% by weight andAzole compoundsAt a concentration of 0.1 to 2% by weight.Copper or copper alloy etchant consisting of an aqueous solution.
    2. The method according to claim 1, wherein the surface of copper or copper alloy isMonoethanolamine, N-methylethanolamine, N-ethylethanolamine, N-butylethanolamine, N, N-dimethylethanolamine, N, N-diethylethanolamine, 2- (2-hydroxy) ethoxyethanolamine, diethanolamine , At least one member selected from the group consisting of N-methyldiethanolamine, N-butyldiethanolamine, triethanolamine, propanolamine, isopropanolamine, hydroxyethylpiperazine and aqueous ammonia solution in an amount of 1 to 40% by weight, chloric acid, chlorate , At least one member selected from the group consisting of chlorite, chlorite, hypochlorite and hypochloriteOxidant1 to 15% by weight, Ammonium saltFrom 1 to 10% by weight andAzole compoundsAt a concentration of 0.1 to 2% by weight.An etching method for making the surface smooth by contacting an aqueous solution.

【0005】
【課題を解決するための手段】
本発明者らは、前記課題を解決するべく鋭意検討を重ねた結果、銅表面を、モノエタノールアミン、N−メチルエタノールアミン、N−エチルエタノールアミン、N−ブチルエタノールアミン、N,N−ジメチルエタノールアミン、N,N−ジエチルエタノールアミン、2−(2−ヒドロキシ)エトキシエタノールアミン、ジエタノールアミン、N−メチルジエタノールアミン、N−ブチルジエタノールアミン、トリエタノールアミン、プロパノールアミン、イソプロパノールアミン、ヒドロキシエチルピペラジンおよびアンモニア水溶液からなる群より選ばれた少なくとも1種、酸化剤、アンモニウム塩およびアゾール化合物を混合した水溶液と接触させると、銅表面を平滑にできることを見出した。
[0005]
[Means for Solving the Problems]
The present inventors have made intensive studies to solve the above problems, the copper surface, monoethanolamine, N- methylethanolamine, N- ethyl ethanolamine, N- butyl ethanolamine, N, N- dimethyl Ethanolamine, N, N-diethylethanolamine, 2- (2-hydroxy) ethoxyethanolamine, diethanolamine, N-methyldiethanolamine, N-butyldiethanolamine, triethanolamine, propanolamine, isopropanolamine, hydroxyethylpiperazine and aqueous ammonia solution It has been found that the copper surface can be smoothed by contact with an aqueous solution in which at least one selected from the group consisting of: an oxidizing agent, an ammonium salt and an azole compound is mixed .

即ち、本発明は下記の構成により達成される。
(1)モノエタノールアミン、N−メチルエタノールアミン、N−エチルエタノールアミン、N−ブチルエタノールアミン、N,N−ジメチルエタノールアミン、N,N−ジエチルエタノールアミン、2−(2−ヒドロキシ)エトキシエタノールアミン、ジエタノールアミン、N−メチルジエタノールアミン、N−ブチルジエタノールアミン、トリエタノールアミン、プロパノールアミン、イソプロパノールアミン、ヒドロキシエチルピペラジンおよびアンモニア水溶液からなる群より選ばれた少なくとも1種を1〜40重量%、塩素酸、塩素酸塩、亜塩素酸、亜塩素酸塩、次亜塩素酸塩および次亜塩素酸塩からなる群より選ばれた少なくとも1種の酸化剤を1〜15重量%、アンモニウム塩を1〜10重量%ならびにアゾール化合物を0.1〜2重量%の濃度で混合した水溶液からなる銅または銅合金のエッチング剤、ならびに
(2)銅または銅合金の表面に、モノエタノールアミン、N−メチルエタノールアミン、N−エチルエタノールアミン、N−ブチルエタノールアミン、N,N−ジメチルエタノールアミン、N,N−ジエチルエタノールアミン、2−(2−ヒドロキシ)エトキシエタノールアミン、ジエタノールアミン、N−メチルジエタノールアミン、N−ブチルジエタノールアミン、トリエタノールアミン、プロパノールアミン、イソプロパノールアミン、ヒドロキシエチルピペラジンおよびアンモニア水溶液からなる群より選ばれた少なくとも1種を1〜40重量%、塩素酸、塩素酸塩、亜塩素酸、亜塩素酸塩、次亜塩素酸塩および次亜塩素酸塩からなる群より選ばれた少なくとも1種の酸化剤を1〜15重量%、アンモニウム塩を1〜10重量%ならびにアゾール化合物を0.1〜2重量%の濃度で混合した水溶液を接触させ、前記表面を平滑にするエッチング法
に関する。
That is, the present invention is achieved by the following configurations.
(1) Monoethanolamine, N-methylethanolamine, N-ethylethanolamine, N-butylethanolamine, N, N-dimethylethanolamine, N, N-diethylethanolamine, 2- (2-hydroxy) ethoxyethanol At least one selected from the group consisting of amine, diethanolamine, N-methyldiethanolamine, N-butyldiethanolamine, triethanolamine, propanolamine, isopropanolamine, hydroxyethylpiperazine and aqueous ammonia solution, in an amount of 1 to 40% by weight, chloric acid, chlorate, chlorite, chlorite, at least one oxidizing agent selected from the group consisting of hypochlorite and hypochlorite 1-15 wt%, ammonium salt 10 % By weight as well as the azole compound . A copper or copper alloy etchant comprising an aqueous solution mixed at a concentration of 1 to 2% by weight , and (2) monoethanolamine, N-methylethanolamine, N-ethylethanolamine, N -Butylethanolamine, N, N-dimethylethanolamine, N, N-diethylethanolamine, 2- (2-hydroxy) ethoxyethanolamine, diethanolamine, N-methyldiethanolamine, N-butyldiethanolamine, triethanolamine, propanolamine At least one selected from the group consisting of isopropanolamine, hydroxyethylpiperazine and aqueous ammonia in an amount of 1 to 40% by weight, chloric acid, chlorate, chlorite, chlorite, hypochlorite and Selected from the group consisting of chlorite 1-15 wt% of at least one oxidizing agent which, the ammonium salt 1 to 10% by weight and the azole compound is contacted with an aqueous solution of a mixture at a concentration of 0.1 to 2% by weight, to smooth the surface Etching method
About.

【0007】
【発明の実施の形態】
以下に、本発明について詳細に記載する。本発明では、液をアルカリ性に保って酸化剤の分解を抑制し、また液中で銅を保持するための成分が用いられており、その具体例としては、例えばモノエタノールアミン、N−メチルエタノールアミン、N−エチルエタノールアミン、N−ブチルエタノールアミン、N,N−ジメチルエタノールアミン、N,N−ジエチルエタノールアミン、2−(2−ヒドロキシ)エトキシエタノールアミン、ジエタノールアミン、N−メチルジエタノールアミン、N−ブチルジエタノールアミン、トリエタノールアミン、プロパノールアミン、イソプロパノールアミン、ヒドロキシエチルピペラジン、アンモニア水溶液があげられる。前記成分のうちでは、モノエタノールアミン、ジエタノールアミン、トリエタノールアミンなどの炭素原子数8以下のアルカノールアミンやアンモニア水溶液などが、銅を保持する能力が高く、また入手しやすく安価なので好ましい。前記成分は2種以上を併用してもよい。
[0007]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, the present invention will be described in detail. In this onset bright, liquid kept alkaline suppress decomposition of the oxidizing agent, also Ri Contact with components used to hold the copper in the liquid, Specific examples thereof include monoethanolamine, N- methylethanolamine, N- ethyl ethanolamine, N- butyl ethanolamine, N, N- dimethylethanolamine, N, N- diethylethanolamine, 2- (2-hydroxy) ethoxy ethanol Amin, diethanolamine, N- methyldiethanolamine , N- butyl diethanolamine down, triethanolamine, propanolamine, isopropanolamine, hydroxyethyl piperazino emissions, aqueous ammonia and the like. Among the above components , alkanolamines having 8 or less carbon atoms, such as monoethanolamine, diethanolamine, and triethanolamine, and aqueous ammonia are preferred because they have a high ability to retain copper, are easily available, and are inexpensive. The components may be used in combination of two or more.

エッチング剤中の前記成分の濃度は1〜40%(重量%、以下同様)が好ましく、5〜30%がさらに好ましい。前記濃度が1〜40%の場合、エッチング液が溶解しうる銅の量が多く、また酸化剤が分解にくく、更にコスト面から見ても良好である。 The concentration of the component in the etching agent is preferably 1 to 40% (% by weight, the same applies hereinafter), and more preferably 5 to 30%. When the concentration is 1 to 40%, the amount of copper in which the etching solution can be dissolved is large, the oxidizing agent is hardly decomposed, and the cost is good.

JP2001169718A 2001-06-05 2001-06-05 Etching agent and etching method for copper or copper alloy Expired - Lifetime JP4706081B2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2001169718A JP4706081B2 (en) 2001-06-05 2001-06-05 Etching agent and etching method for copper or copper alloy
CNB021222509A CN1324164C (en) 2001-06-05 2002-06-03 Copper or copper alloy corrodent and corrosion method
TW91111830A TWI242608B (en) 2001-06-05 2002-06-03 Etching agent for copper or copper alloy and etching method therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001169718A JP4706081B2 (en) 2001-06-05 2001-06-05 Etching agent and etching method for copper or copper alloy

Publications (3)

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JP2002363777A JP2002363777A (en) 2002-12-18
JP2002363777A5 true JP2002363777A5 (en) 2008-06-26
JP4706081B2 JP4706081B2 (en) 2011-06-22

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CN (1) CN1324164C (en)
TW (1) TWI242608B (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101337263B1 (en) * 2004-08-25 2013-12-05 동우 화인켐 주식회사 Etchant composition for indium oxide layer and etching method using the same
JP4822519B2 (en) * 2006-06-26 2011-11-24 Jx日鉱日石金属株式会社 Semiconductor wafer pretreatment agent and pretreatment method
US20080224092A1 (en) * 2007-03-15 2008-09-18 Samsung Electronics Co., Ltd. Etchant for metal
JP5219304B2 (en) 2010-12-14 2013-06-26 メック株式会社 Etching agent and etching method using the same
JP5885971B2 (en) * 2011-09-08 2016-03-16 関東化學株式会社 Etching solution for copper and copper alloy
KR101461180B1 (en) 2012-04-26 2014-11-18 (주)삼성화학 Copper Echant without Hydrogen Peroxide
CN103695908A (en) * 2013-12-27 2014-04-02 东莞市广华化工有限公司 Novel organic alkali micro-etching solution
CN104694909B (en) * 2014-07-03 2017-01-25 广东丹邦科技有限公司 Copper surface coarsening agent
KR102367814B1 (en) * 2016-03-30 2022-02-25 동우 화인켐 주식회사 Etching solution composition for molybdenum-containing layer and manufacturing method of an array substrate for liquid crystal display using the same
CN110678582B (en) 2017-06-01 2021-10-29 三菱综合材料株式会社 Method for producing high-purity electrolytic copper
CN111485263B (en) * 2019-01-25 2023-02-17 上海新阳半导体材料股份有限公司 Lead frame deoxidant, preparation method and application thereof
KR20230007390A (en) * 2020-04-27 2023-01-12 나믹스 가부시끼가이샤 composite copper member

Family Cites Families (6)

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Publication number Priority date Publication date Assignee Title
JPS56102581A (en) * 1980-01-17 1981-08-17 Yamatoya Shokai:Kk Etching solution of copper
US5630950A (en) * 1993-07-09 1997-05-20 Enthone-Omi, Inc. Copper brightening process and bath
JPH0866373A (en) * 1995-10-03 1996-03-12 Terumo Corp Temperature measurement instrument with pulse measurement function
JPH1129883A (en) * 1997-07-08 1999-02-02 Mec Kk Microetching agent for copper and copper alloy
US5897375A (en) * 1997-10-20 1999-04-27 Motorola, Inc. Chemical mechanical polishing (CMP) slurry for copper and method of use in integrated circuit manufacture
JP2000282265A (en) * 1999-03-31 2000-10-10 Mec Kk Microetching agent for copper or copper alloy and surface treating method using the same

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