TWI242608B - Etching agent for copper or copper alloy and etching method therefor - Google Patents
Etching agent for copper or copper alloy and etching method therefor Download PDFInfo
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1242608 五、發明說明d) 技術領^ 彳::係關於可將銅或銅合金(以下簡稱為銅)之表面蝕 刻至千滑之蝕刻劑及蝕刻方法。 先前技1 " $成平滑銅表面之钱刻劑,例如揭示於日本專利 特么平58-2 1 0 28號公報中之一種含有草酸鹽、過氧化氫、 月女$員及苯并三唑之酸性水溶液。又,於美國專利第义 5 6 3^0 9 <5 0唬說明書中揭示一種含有硫酸、過氧化氫及過氧 化氫穩定劑之酸性水溶液。 問顳 、然而’。日本專利特公平5 8 — 2丨〇 2 8號公報之蝕刻劑,存在 ί:ΐ5二C的高溫下進行處理,A容易析出難溶性的銅錯 。^ °題。另外,美國專利第5 6 3 0 9 5 0號之蝕刻劑,存 在=須f狹窄範圍下控制硫酸濃度或過氧化氫濃度,與在 過^化氯濃度過高時容易產生突然沸騰等問題。 口此、’為解決現有技術之缺點,本發明之目的在於 溫和的條件下可使銅表面變得平滑之姓刻劑 使 丽述表面變得平滑之蝕刻方法。 使 I—決問 士,明人經過反覆深入的研究,結果發現:若使 與含有羥胺、氧化劑、銨鹽和唾化合物(az〇ie) 表面 接觸,就可以使銅表面變得平滑。 i合液 即本發明由下述之組成來完成: (1)由含有艘胺、氧化劑、銨鹽及唑化合物的水溶液所 1242608 - 五、發明說明(2) 組成之銅或銅合金之蝕刻劑。 ⑺使含有羥胺、氧化劑 銅或銅合金的表面接觸更-及唾化合物的水溶液邀 述表面平滑之蝕刻方法、 本發明之詳細說明如下。 / 。 本發明中所使用之羥胺係、 劑分解、並在溶液中保持鋼的:液保持鹼性、抑制 可列舉出·· _乙醇胺、N其:’作為其具體例 丁基乙醇胺、N,N— J基乙醇胺、^乙基乙醇句如 ? 〇一〜甘、 一 f基乙醇胺、N w— - ^ 夺知、IV、 (經基)乙氧基乙醇胺等之 萨一乙基乙醇胺、1242608 V. Description of the invention d) Technical guide ^ 彳: It is about an etchant and an etching method that can etch the surface of copper or copper alloy (hereinafter referred to as copper) to a thousand slips. Prior art 1 " A coin engraving agent for forming a smooth copper surface, for example, as disclosed in Japanese Patent No. 58-2 1 0 28, contains oxalate, hydrogen peroxide, hydrazine and benzo An acidic aqueous solution of triazole. In addition, U.S. Patent No. 5 6 3 0 9 < 50 0 discloses an acidic aqueous solution containing sulfuric acid, hydrogen peroxide, and a hydrogen peroxide stabilizer. Ask the temporal, but ’. The etchant of Japanese Patent Laid-Open No. 5 8 — 2 丨 〇 2 8 has: ΐ5 2 C is processed at a high temperature, and A is liable to precipitate insoluble copper faults. ^ ° Question. In addition, the etchant of U.S. Patent No. 563 0 950 has problems such as controlling sulfuric acid concentration or hydrogen peroxide concentration in a narrow range of f, and it is easy to cause sudden boiling when the concentration of excessive chlorine is too high. In order to solve the disadvantages of the prior art, the object of the present invention is an etching method that can smoothen the copper surface under mild conditions and make the surface smooth. After making in-depth research, I-dealer, Ming found that if the surface is made of contact with hydroxylamine, oxidant, ammonium salt, and salicylate (az〇ie), the copper surface can be smoothed. The i-fluid is the invention consisting of: (1) an aqueous solution containing an aqueous amine, oxidant, ammonium salt, and azole compound 1242608-V. Description of the invention (2) Copper or copper alloy etchant . (1) A method of etching the surface to bring the surface containing hydroxylamine, an oxidizing agent, copper or a copper alloy into contact with an aqueous solution of salivary compounds, and a detailed description of the present invention is as follows. /. The hydroxylamine-based agents used in the present invention decompose and retain steel in solution: the liquid remains alkaline and inhibited. Examples include ethanolamine, N, and ': as specific examples thereof butylethanolamine, N, N- J-based ethanolamine, ^ ethyl ethanol sentences such as 〇 一 ~ 甘, 一 ethanolethanolamine, N w--^ Zhizhi, IV, (Ethyl) ethoxyethanolamine, etc.
:基二醇胺、N_丁基 :私類,二乙醇胺I 胺、丙醇胺、異丙醇胺、〜予胺寻之二乙醇胺類,= 氧水溶液。 “-乙基六氣”等之炫醇:= 在上述羥胺之中,以一 、3 ”原子數在8以下的燒一醇乙胺醇胺、二乙醇胺、三乙醇胺等 們保持銅的能力高、容易取?虱水洛液等較佳,因為它 種以上之上述羥胺。易取侍、且價格便宜。也可併用匕2 蝕刻劑中羥胺的濃度 更佳為5〜30 %。 佳為1〜40%(重量%,以下相同) 在上述濃度為1〜4 〇 %的主 較多,且氧化劑難以0分钱刻液可溶解的銅的量 本發明中所使用的氧,從成本方面來看也較好。 溶液中的成分,作為复2係為使銅氧化並促進其溶解至 酸鹽(鈉鹽、鉀鹽等)了 肢例,例如可列舉出:氣酸、 亞氣酸、亞氣酸鹽(鈉鹽、卸_ ^ mm C:\2D-CODE\9l-08\911H830.ptd 第5頁 1242608 五、發明說明(3) 等)、次氣酸、次氯酸鹽(鈉鹽、鉀越 之中,以氣酸鹽、亞氣酸鹽、土 &皿 在上述氧化劑 為它們在溶液中的穩定性較高f ^鹽等的鹽類較佳,因 氧化劑。 ^也可併用2種以上之上述 姓刻劑中氧化劑的濃度較佳 在上述濃度為1〜15%的情況下〜 % ’更佳為5〜1〇%。 ,可加快蝕刻速度,且氧 化劑本身難以分解,從成本方面來看:好' 本發明中所使用的銨鹽係為藉 促進銅溶解的成分,作為其具體例,二:可:::料而 銨、溴化銨、硫酸銨、過硫酸錄、 i 】牛出·氯化 碟酸-銨、磷酸二銨、磷酸三銨、;以:銨二草酸銨、 銨、已二酸銨、乳酸銨。 叙、棒檬酸二 在上述銨鹽之中,以氯化錢、演化錢 錄、磷酸二銨、磷酸三銨、檸檬酸銨較佳;=、磷酸: 化劑的反應性低,可提高溶液的安全 口為它們與乳 上之上述銨鹽。 的女“生。也可併用2種以 蝕刻劑中銨鹽的濃度較佳為卜1〇%, 述濃度為1〜10%的情況下,钱刻速度不會過快,~ %二^ 慢,較適中,因此不會造成深淺不均,' ^ 表面。 九个J 谷易取得平滑的銅 解本:Π 的唾化合物係為抑制垂直方向的銅的溶 解促進水千方向的銅的溶解的成分,作為其呈 如可列舉出:咪唾、2_苯基味峻、卜乙烯基味唾1并口米 唾、2- 丁基苯并。米哇、2_苯乙基苯并咪唾、卜氨基苯并味 第6頁 C:\2D-00DE\91-08\9ini830.ptd 1242608 五、發明說明(4) 唑、2 -魏基苯并咪°坐等之咪唑類,1,2,4 -三唾、3 -氨基 -1,2,4 -三°坐、1,2,3 -苯弁三σ坐、1-經基苯并三°坐、叛基 苯并三σ坐等之三°坐類,四17坐、5 -苯基-1Η-四ϋ坐、5-曱基 -1 Η -四σ坐、5 -氨基-1 Η -四ϋ坐等之四σ坐類’吼°井、苯并〇塞 σ坐、2 —統基苯弁σ塞σ坐等。 在上述唑化合物之中,以咪唑、1 -乙烯基咪唑、1,2,4 -三°坐、3_氨基-1,2,4-三°坐、1-經基苯并三11坐、四嗤、5-曱基-1Η-四唑、5 -氨基-1Η-四唑等之沒有芳香族置換基的 唑化合物較佳,因為它們易溶於溶液中,並且使銅表面變 為平滑的效果良好。也可併用2種以上之上述唑化合物。 蝕刻劑中唑化合物的濃度較佳為0. 1〜2%,更佳為0. 4〜1. 2%。在上述濃度為0. 1〜2%的情況下,容易得到平滑的銅表 面。 本發明的蝕刻劑是鹼性,pH值通常為1 0〜1 2的範圍。 可進一步在本發明的餘刻劑中配入各種添加劑,例如, 為了使I虫刻更均勻,可以配入表面活性劑。 藉由將上述的各成分溶解於水中,可容易地對本發明的 蝕刻劑進行調整。作為上述水,以離子交換水等已除去離 子性物質和不純物的水較佳。 對於採用本發明的蝕刻劑進行處理的銅表面沒有特別的 限制,例如可以是銅箔、無電解銅鍍膜、電解銅鍍膜、銅 喷鍍膜等的表面。上述銅表面以已由氫氧化鈉水溶液等進 行驗洗淨,或者由硫酸或鹽酸進行酸洗淨之清潔的表面較 佳。: Glycoldiol amine, N-butyl: Private type, diethanolamine I amine, propanolamine, isopropanolamine, ~ ethanolamine diethanolamine, = oxygen aqueous solution. "-Ethylhexaki" and other alcohols: = Among the above-mentioned hydroxylamines, the ability to retain copper with mono-, mono-, and tri-ethanol amines of 8 or less is 8 ethanolamine, diethanolamine, triethanolamine, etc. Easy to take? Loquat solution is better because it has more than the above-mentioned hydroxylamine. It is easy to obtain and cheap. It can also be used in combination with the concentration of hydroxylamine in the etchant. 5 ~ 30% is better. ~ 40% (% by weight, the same below) The above-mentioned concentration of 1 ~ 40% is high, and the amount of copper which is difficult to be dissolved by the oxidant is 0 cents. The amount of copper used in the present invention is from the cost aspect. The components in the solution are examples of complex 2 systems that oxidize copper and promote its dissolution to acid salts (sodium salt, potassium salt, etc.). Examples include gas acid, gas gas, and gas. Gas acid salt (sodium salt, unloading ^ mm C: \ 2D-CODE \ 9l-08 \ 911H830.ptd page 5 1242608 V. Description of the invention (3), etc.), hypogas acid, hypochlorite (sodium salt Among potassium, potassium salts, salts with gaseous acid, gaseous acid salt, soil & dish in the above oxidants are more stable in the solution. Due to the oxidant. ^ The concentration of the oxidant in the two or more kinds of the above-mentioned nicking agents can also be used in combination. The concentration is preferably 1% to 15%, and more preferably 5% to 10%. It can accelerate the etching speed. Moreover, the oxidant itself is difficult to decompose, and from a cost point of view: Good. The ammonium salt used in the present invention is a component that promotes the dissolution of copper. As a specific example, two: may ::: ammonium, ammonium bromide, Ammonium sulfate, persulfuric acid, i] Niu Chu · Dialic acid-ammonium chloride, diammonium phosphate, triammonium phosphate, ammonium dioxalate, ammonium, ammonium adipate, ammonium lactate. Syrian, citric acid Among the above-mentioned ammonium salts, chlorinated chloride, evolved zinc chloride, diammonium phosphate, triammonium phosphate, and ammonium citrate are preferred; =, phosphoric acid: the reactivity of the chemical agent is low, which can improve the safe mouth of the solution for them And the above-mentioned ammonium salt on the milk. The female "raw". It is also possible to use two kinds together. The concentration of the ammonium salt in the etchant is preferably 10%. When the concentration is 1 ~ 10%, the speed of money engraving will not Too fast, ~% 2 ^ slow, more moderate, so it will not cause uneven depth, '^ surface. Nine J Valley is easy to get flat Copper Solution: The salivary compound of Π is a component that inhibits the dissolution of copper in the vertical direction and promotes the dissolution of copper in the water direction. Misal 1, Misal, 2-butyl benzo. Miwa, 2-phenethylbenzisal, p-aminobenzo flavor Page 6 C: \ 2D-00DE \ 91-08 \ 9ini830.ptd 1242608 V. Description of the invention (4) Imidazoles such as azole, 2-weiyl benzimid, etc., 1, 2, 4-trisal, 3-amino-1, 2, 4, 4-tri °, 1, 2, 3 -Benzene trisigma sitting, 1-benzyl trisigma sitting, tertyl benzotrisigma sitting, etc., three 17 sittings, 5 -phenyl-1 stilbene sitting, 5-fluorenyl- Four sigma sitting classes of 1 Η-four sigma sitting, 5-amino-1 Η-tetra sauing sitting, etc., benzo 塞 sigma sitting, 2-base benzo sigma sigma sitting and so on. Among the aforementioned azole compounds, imidazole, 1-vinylimidazole, 1,2,4-tri ° sitting, 3-amino-1, 2, 4-tri ° sitting, 1-tribenzyltri-11 sitting, Tetrafluorene, 5-fluorenyl-1fluorene-tetrazole, 5-amino-1fluorene-tetrazole, and other azole compounds without aromatic substituents are preferred because they are easily soluble in solution and make the copper surface smooth Works well. These azole compounds may be used in combination of two or more kinds. 2%。 The concentration of the azole compound in the etchant is preferably 0. 1 ~ 2%, more preferably 0. 4 ~ 1. 2%. In the case where the concentration is 0.1 to 2%, a smooth copper surface is easily obtained. The etchant of the present invention is alkaline, and the pH value is usually in the range of 10 to 12. Various additives may be further added to the after-cutting agent of the present invention. For example, a surfactant may be added in order to make the I-cutting more uniform. By dissolving the above components in water, the etchant of the present invention can be easily adjusted. The water is preferably water from which ionic substances and impurities have been removed, such as ion-exchanged water. The copper surface treated with the etchant of the present invention is not particularly limited, and may be, for example, a surface of a copper foil, an electroless copper plating film, an electrolytic copper plating film, a copper sprayed film, or the like. The above-mentioned copper surface is preferably a clean surface that has been cleaned by an aqueous solution of sodium hydroxide or the like, or acid-washed by sulfuric acid or hydrochloric acid.
C:\365\91111830.ptd 第7頁 1242608 五 、發明說明(5) 作為使本發明的 —^ 以使用噴射法、噴# ^ ”妾觸銅表面的方法來說,彳 燥。 ,淋去、浸溃法等,然後進行水洗例:可 對於使I虫刻劑% 主 ^ it f I, ,] fj „ ^ ^ $: ^ ^ ^ ^ , 3 0〜1 2 0秒鐘。 U L 接觸犄間較佳為 又’蝕刻量(蝕刻深度)之 態”標平滑度而不同,通常^犯二因銅表面的表面狀 右採用本發明的蝕刻劑來蝕 行,可提高銅表面的平滑度。因此 上=的進 大時,或想要得到平滑产m 士被處理面的凹凸較 (银刻深度)。千月度同的表面時’亦可以增大姓刻量 ,士上所ϋ II由使用本發明的姓刻劑來姓刻銅表面 將銅表面蝕刻得很平滑。本發明的蝕刻劑有利於例如鍍 鎳、鍍金、鍍銀、鍍錫等的鍍金屬的前處理等,可以提高 鍵金屬的平㈣。並且,也有利於採用光㈣法形成印二 電路板的銅電路圖案等情況下的黏貼感光膠的前處理等。 實施例 〈實施例1〜6及比較例1〜2> 混合表1所示之成分,調製蝕刻劑。 接著,將印刷電路板用覆銅層壓板浸潰於5%的鹽酸水溶 液中,浸潰時間為1 5秒鐘,然後進行水洗、乾燥,洗淨銅 表面。在2 5 °C下,喷射下述表1所示的蝕刻劑,時間為3 〇 秒鐘,姓刻2 // m,然後進行水洗、乾燥。而且,根據溶解C: \ 365 \ 91111830.ptd Page 7 1242608 V. Description of the invention (5) As a method of making the present invention-^ using the spray method, spray # ^ "touch the copper surface, dry it. , Immersion method, etc., and then washed with water Example: For the insect insecticide% ^ it f I,,] fj „^ ^ $: ^ ^ ^ ^, 30 to 120 seconds. The UL contact area is preferably the same as the "etching amount (etching depth)" standard. The smoothness is usually different. Generally, the surface of the copper surface is etched using the etchant of the present invention, which can improve the copper surface. Smoothness. Therefore, when the upper surface is larger, or if you want to obtain a smooth surface, the unevenness of the treated surface (silver engraving depth). When the surface is the same for a thousand months, you can also increase the last name engraving volume. The copper surface is etched very smoothly by using the last name etcher of the present invention to etch the copper surface. The etchant of the present invention is advantageous for pretreatment of metal plating such as nickel plating, gold plating, silver plating, tin plating, etc., and can improve The flat metal of the key metal. Also, it is beneficial to the pre-treatment of sticking the photoresist when the copper circuit pattern of the printed circuit board is formed by the photolithography method. Examples <Examples 1 to 6 and Comparative Examples 1 to 2> The ingredients shown in Table 1 were mixed to prepare an etchant. Next, the copper-clad laminate for printed circuit boards was immersed in a 5% aqueous hydrochloric acid solution for a immersion time of 15 seconds, and then washed with water, dried, and washed. Clean copper surface. Spray below at 25 ° C 1 shown in the etchant, time is 3 seconds billion, name engraved 2 // m, and then washed with water, and dried. Then, from the solubility
C:\2D-C0DE\91-08\91111830.ptd 第&頁 1242608 五、發明說明(6) 秒鐘,钱刻2 // m,然後進行水洗、乾燥。而且,根據溶解 下來的銅的重量、表面積和比重計算出姓刻量的值。 採用光澤度評價處理後的銅表面的平滑性。 光澤度是使用日本電色工業(股)製之攜帶型光澤度計 PG-1M,並按照JIS Z 874 1測定20度鏡面光澤而得到的。結 果示於表1。 〈比較例1 > 與實施例1相同,調製蝕刻劑,並進行蝕刻,但銅表面 幾乎未被钱刻。將得到的表面的光澤度示於表1。 〈比較例2 > 與實施例1相同,調製蝕刻劑,並蝕刻銅表面。將得到 的表面的光澤度示於表1。C: \ 2D-C0DE \ 91-08 \ 91111830.ptd page & page 1242608 V. Description of the invention (6) Second, the money is engraved 2 // m, then washed and dried. Then, the value of the last name was calculated based on the weight, surface area, and specific gravity of the dissolved copper. The smoothness of the treated copper surface was evaluated using gloss. The gloss is obtained by measuring a 20-degree specular gloss in accordance with JIS Z 874 1 using a portable gloss meter PG-1M manufactured by Nippon Denshoku Industries Co., Ltd. The results are shown in Table 1. ≪ Comparative Example 1 > As in Example 1, an etchant was prepared and etched, but the copper surface was hardly engraved. Table 1 shows the glossiness of the obtained surface. <Comparative Example 2> As in Example 1, an etchant was prepared and the copper surface was etched. Table 1 shows the gloss of the obtained surface.
C:\2D-C0DE\91-08\91111830.ptd 第9頁 1242608 五、發明說明(7) 【表1】 實施例編號 組成(重量%) 光澤度 二乙醇胺 10 次氯酸鈉 10 1 硫酸銨 6 82.0 卜乙烯基咪唑 0.8 離子交換水 73.2 一乙醇胺 6 次氯酸鈉 10 2 硫酸銨 5 76.6 1-乙烯基咪唑 0.8 離子交換水 78.2 二乙醇胺 10 次氯酸鈉 10 3 檸檬酸銨 6 91.3 1-乙烯基咪唑 0.6 離子交換水 73.4 二乙醇胺 10 次氯酸鈉 10 4 硫酸銨 5 83.4 苯幷咪唑 1 離子交換水 74 一乙醇胺 15 5 氯酸鈉 15 89.6C: \ 2D-C0DE \ 91-08 \ 91111830.ptd Page 9 1242608 V. Description of the invention (7) [Table 1] Example No. Composition (% by weight) Gloss Diethanolamine 10 Sodium hypochlorite 10 1 Ammonium sulfate 6 82.0 Bu Vinyl imidazole 0.8 Ion-exchanged water 73.2 Monoethanolamine 6 Sodium hypochlorite 10 2 Ammonium sulfate 5 76.6 1-Vinyl imidazole 0.8 7 Ion-exchanged water 78.2 Diethanolamine 10 Sodium hypochlorite 10 3 Ammonium citrate 6 91.3 1-Vinyl imidazole 0.6 Ion-exchanged water 73.4 Two Ethanolamine 10 sodium hypochlorite 10 4 ammonium sulfate 5 83.4 benzimidazole 1 ion-exchanged water 74 monoethanolamine 15 5 sodium chlorate 15 89.6
C:\2D-OODE\91 -08\91111830.ptd 第 10 頁 1242608 五、發明說明(8) 表1C: \ 2D-OODE \ 91 -08 \ 91111830.ptd Page 10 1242608 V. Description of the invention (8) Table 1
C:\2D-C0DE\91-08\91111830.ptd 氯化銨 4 苯幷咪唑 1 離子交換水 65 6 一乙醇胺 10 氯酸鈉 硫酸錶 5 5-甲基-1H-四唑 1.2 離子交換水 68·8 87.9 比較例I 二乙醇胺 次氯酸鈉 1Q 1-乙烯基咪唑 〇·8 離子交換水 79·2 24.4 比較例2 二乙醇胺 10 次氯酸鈉 IQ 硫酸銨 6 離子交換水 74 6.3 第11頁C: \ 2D-C0DE \ 91-08 \ 91111830.ptd ammonium chloride 4 benzimidazole 1 ion-exchanged water 65 6 monoethanolamine 10 sodium chlorate sulfuric acid Table 5 5-methyl-1H-tetrazole 1.2 ion-exchanged water 68 8 87.9 Comparative Example I Sodium diethanolamine hypochlorite 1Q 1-vinylimidazole 0.8 Ion-exchanged water 79.2 24.4 Comparative Example 2 Diethanolamine 10 Sodium hypochlorite IQ Ammonium sulfate 6 Ion-exchanged water 74 6.3 Page 11
頁 i 1242608 案號 91111830 Λ_η 修正 Λ 92. 12. ;| 3 替技嘵 五、發明說明(9) — 如表1所示,藉由使用本發明的蝕刻劑,可以將銅表面 蝕刻成為具有7 6. 6以上光澤度的平滑表面。 〈實施例7〜1 4 > 除了使用表2中所示之蝕刻劑之外,其餘均同實施例1地 對銅表面進行處理,並評價處理後的銅表面之平滑性。結 果示於表2中。Page i 1242608 Case No. 91118830 Λ_η Correction Λ 92. 12.; | 3 Alternatives V. Description of the invention (9) — As shown in Table 1, by using the etchant of the present invention, the copper surface can be etched to have a thickness of 7 Smooth surface with a gloss of 6.6 or more. <Examples 7 to 1 4> The copper surface was treated in the same manner as in Example 1 except that the etchant shown in Table 2 was used, and the smoothness of the copper surface after the treatment was evaluated. The results are shown in Table 2.
(3:\總檔\91\91丨11830\911 1 1830(替換)-1.口“ 第12頁 1242608 案號 91111830 A_ 曰 修正 92, 12. 2 3 替換頁 五、發明說明(10)表2 實施例編號 組成(重量%) 光澤度 實施例7 N-曱基乙醇胺 10 次氯酸 15 硫酸銨 5 苯并咪唑 1 離子交換水 79 88.0 實施例8 丙醇胺 1 亞氯酸 15 胺磺酸銨 4 1,2,4-三唑 2 離子交換水 78 83.5 實施例9 28%氨水 40 亞氣酸鉀 15 乳酸銨 1 四嗤 0.1 離子交換水 43.9 92.0 實施例1 0 丙醇胺 15 氯酸 1 硫酸敍 4 四唑 1 離子交換水 79 81.5 實施例11 28%氨水 20 氯酸 1〇 檸檬酸銨 1〇 苯并咪唑 2 離子交換水 58 85.9 實施例12 N-乙基乙醇胺 30 亞氯酸 7 乳酸銨 6 1,2,4·三唑 2 離子交換水 55 79.9 實施例13 二乙醇胺 20 亞氣酸鈉 3 胺磺酸銨 8 1·乙烯基咪唑 1.5 離子交換水 67.5 93.4 實施例14 N-曱基乙醇胺 28 次氯酸納 15 氯化銨 4 1,2,3-苯并三唑 2 離子交換水 51 84.9 t i(3: \ Total file \ 91 \ 91 丨 11830 \ 911 1 1830 (replacement)-1. mouth "Page 12 1242608 Case No. 91118830 A_ Revision 92, 12. 2 3 Replacement page V. Description of invention (10) 2 Example No. Composition (% by weight) Gloss Example 7 N-fluorenylethanolamine 10 Hypochlorous acid 15 Ammonium sulfate 5 Benzimidazole 1 Ion-exchanged water 79 88.0 Example 8 Propanolamine 1 Chlorous acid 15 Amine sulfonic acid Ammonium 4 1,2,4-triazole 2 Ion-exchanged water 78 83.5 Example 9 28% ammonia 40 potassium nitrite 15 Ammonium lactate 1 Tetramium 0.1 Ion-exchanged water 43.9 92.0 Example 1 0 Propanolamine 15 Chloric acid 1 Sulfate 4 Tetrazole 1 Ion-exchanged water 79 81.5 Example 11 28% ammonia 20 20 Chloric acid 10 Ammonium citrate 1 10 Benzimidazole 2 Ion-exchanged water 58 85.9 Example 12 N-ethylethanolamine 30 Chlorous acid 7 Lactic acid Ammonium 6 1,2,4 · Triazole 2 Ion-exchanged water 55 79.9 Example 13 Diethanolamine 20 Sodium nitrosate 3 Ammonium sulfamate 8 1 · Vinyl imidazole 1.5 Ion-exchanged water 67.5 93.4 Example 14 N-fluorenyl group Ethanolamine 28 Sodium hypochlorite 15 Ammonium chloride 4 1,2,3-benzotriazole 2 Ion-exchanged water 51 84.9 ti
C:\,總檔\91\911 1 1830\9111 1830(替換)-1^“ 第13頁 1242608 案號 9Π11830 修正 92. 12, 2 3 替換頁 五、發明說明(11) (發明之效果) 本發明可以提供一種在溫和的條件下可使銅表面變得平 滑之#刻劑,及可使上述表面變得平滑之#刻方法。 tC: \, total file \ 91 \ 911 1 1830 \ 9111 1830 (replacement) -1 ^ "Page 13 1242608 Case No. 9Π11830 Amendment 92. 12, 2 3 Replacement page V. Description of the invention (11) (Effect of the invention) The invention can provide a #etching agent that can smooth the copper surface under mild conditions, and a #etching method that can smooth the surface.
C: \總檔\91\911 11830\91111830(替換)-1.ptc 第14頁 1242608 92, 12. 2 3 替換頁 案號91111830 年月日 修正C: \ Total file \ 91 \ 911 11830 \ 91111830 (replace) -1.ptc Page 14 1242608 92, 12. 2 3 Replace page Case No. 91118830 Rev.
C:\ 總檔\91\911 11830\911 1 1830(替換)-l.ptc 第15頁C: \ master file \ 91 \ 911 11830 \ 911 1 1830 (replace) -l.ptc page 15
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KR101337263B1 (en) * | 2004-08-25 | 2013-12-05 | 동우 화인켐 주식회사 | Etchant composition for indium oxide layer and etching method using the same |
JP4822519B2 (en) * | 2006-06-26 | 2011-11-24 | Jx日鉱日石金属株式会社 | Semiconductor wafer pretreatment agent and pretreatment method |
JP5559956B2 (en) * | 2007-03-15 | 2014-07-23 | 東進セミケム株式会社 | Etching solution composition for thin film transistor liquid crystal display device |
JP5219304B2 (en) | 2010-12-14 | 2013-06-26 | メック株式会社 | Etching agent and etching method using the same |
JP5885971B2 (en) * | 2011-09-08 | 2016-03-16 | 関東化學株式会社 | Etching solution for copper and copper alloy |
KR101461180B1 (en) | 2012-04-26 | 2014-11-18 | (주)삼성화학 | Copper Echant without Hydrogen Peroxide |
CN103695908A (en) * | 2013-12-27 | 2014-04-02 | 东莞市广华化工有限公司 | Novel organic alkali micro-etching solution |
CN104694909B (en) * | 2014-07-03 | 2017-01-25 | 广东丹邦科技有限公司 | Copper surface coarsening agent |
KR102367814B1 (en) * | 2016-03-30 | 2022-02-25 | 동우 화인켐 주식회사 | Etching solution composition for molybdenum-containing layer and manufacturing method of an array substrate for liquid crystal display using the same |
US11753733B2 (en) * | 2017-06-01 | 2023-09-12 | Mitsubishi Materials Corporation | Method for producing high-purity electrolytic copper |
CN111485263B (en) * | 2019-01-25 | 2023-02-17 | 上海新阳半导体材料股份有限公司 | Lead frame deoxidant, preparation method and application thereof |
JP6806405B1 (en) * | 2020-04-27 | 2021-01-06 | ナミックス株式会社 | Composite copper member |
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JPS56102581A (en) * | 1980-01-17 | 1981-08-17 | Yamatoya Shokai:Kk | Etching solution of copper |
US5630950A (en) * | 1993-07-09 | 1997-05-20 | Enthone-Omi, Inc. | Copper brightening process and bath |
JPH0866373A (en) * | 1995-10-03 | 1996-03-12 | Terumo Corp | Temperature measurement instrument with pulse measurement function |
JPH1129883A (en) * | 1997-07-08 | 1999-02-02 | Mec Kk | Microetching agent for copper and copper alloy |
US5897375A (en) * | 1997-10-20 | 1999-04-27 | Motorola, Inc. | Chemical mechanical polishing (CMP) slurry for copper and method of use in integrated circuit manufacture |
JP2000282265A (en) * | 1999-03-31 | 2000-10-10 | Mec Kk | Microetching agent for copper or copper alloy and surface treating method using the same |
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2001
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JP4706081B2 (en) | 2011-06-22 |
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