JP2002362945A - Substrate treating apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate cleaning apparatus in which the particle diameter or the flow rate of a treating liquid jetted from a nozzle body is made changeable. SOLUTION: The substrate cleaning apparatus is provided with a substrate supporting structure 2 and a treating liquid jetting structure 10. The treating liquid jetting structure 10 is composed of the nozzle body 20 for jetting the treating liquid to the substrate W, a treating liquid supply source 13 for supplying the pressurized treating liquid to the nozzle body 20 and a gas supply source 16 for supplying a pressurized gas to the nozzle body 20. The nozzle body 20 is provided with an introducing flow passage for introducing the treating liquid, a 1st throttle port formed at the end part of the introducing flow passage and for jetting the treating liquid in the introducing flow passage, a jetting flow passage communicating with the 1st throttle port and extended to the jetting direction of the treating liquid jetted from the 1st throttle port, a gas flow passage communicating with the jetting flow passage and for jetting the pressurized gas toward the jetting direction treating liquid in the jetting flow passage and a 2nd throttle port formed at the end part of the jetting flow passage to face the 1st throttle port and for jetting the atomized treating liquid.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention sprays a processing liquid such as an atomized cleaning liquid or a chemical liquid on a substrate such as a liquid crystal glass substrate, a semiconductor (silicon) wafer, a glass substrate for a photomask, and a substrate for an optical disk. And a substrate processing apparatus for performing processing.

[0002]

2. Description of the Related Art For example, a TFT substrate constituting a liquid crystal substrate is manufactured through various processes. In each process, a TFT substrate is coated by applying a developing solution or a resist film, a chemical solution for removing the resist film, or a cleaning solution. Are applied with various treatment liquids.

Conventionally, for example, in a cleaning process, for example, a substrate is supported by a supporting device, and a processing liquid is sprayed on the substrate from a nozzle body disposed above the substrate to clean the substrate. A substrate cleaning apparatus is used.
FIG. 4 shows an example of a nozzle body used in this substrate cleaning apparatus. As shown in the figure, the nozzle body 101 has liquid flow paths 103 opened at upper and lower end surfaces thereof, respectively.
The cleaning liquid is supplied to the supply pipe 105 for supplying the cleaning liquid, and the cleaning liquid is introduced into the liquid flow path 103 from the upper opening 102, and the cleaning liquid is ejected from the aperture 104 as the lower opening to the substrate W. . The supply pipe 105 is appropriately connected to a cleaning liquid supply source, and a plurality of the nozzle bodies 101 are screwed at a predetermined pitch in a longitudinal direction thereof, and supplied from the cleaning liquid supply source into a pipe 106 of the supply pipe 105. The cleaning liquid is supplied to each of the nozzle bodies 101.

Further, the supporting device includes a support for supporting the substrate, and a rotation driving means for horizontally rotating the support. The support device is configured to rotate the supported substrate horizontally. For example, there is a device provided with a transport unit for transporting in the direction.

In cleaning a substrate having a fine structure, a step of washing particles on the surface of the substrate with a cleaning liquid jet having a relatively large particle size is usually performed. A multi-step process of washing particles inside the microstructure with a flow is employed.

Therefore, in the substrate cleaning apparatus in which the supporting device is configured to rotate the substrate horizontally, a supply pipe 105 in which a nozzle body 101 for spraying a cleaning liquid having a relatively large particle diameter is screwed, and a fine particle A plurality of supply pipes 105 to which a nozzle body 101 for injecting a cleaning liquid having a diameter is screwed are provided, and each supply pipe 105 is pivotally moved between a position above the substrate and a retracted position off the substrate. Configured to
First, a nozzle body 1 for spraying a cleaning liquid having a relatively large particle diameter is used.
After cleaning the substrate by swiveling the supply pipe 105 provided with the nozzle No. 01 above the substrate, the supply pipe 105 provided with the nozzle body 101 for spraying a cleaning liquid having a fine particle diameter is swung upwardly of the substrate. The substrate is to be cleaned.

Further, in the substrate cleaning apparatus in which the supporting device transports the substrate in the horizontal direction by the transport means, the plurality of supply pipes 105 are arranged at a predetermined interval above the substrate cleaning device in the transport direction of the substrate. A supply pipe 105 having a nozzle body 101 for ejecting a cleaning liquid having a relatively large particle diameter is disposed on the upstream side in the transport direction of the substrate, and a nozzle for ejecting a cleaning liquid having a fine particle diameter is provided on the downstream side. A supply pipe 105 provided with the body 101 is provided, and the substrate conveyed by the conveying means is first cleaned with a cleaning liquid jet having a relatively large particle diameter, and then with a cleaning liquid jet having a fine particle diameter. It has become.

[0008]

Each of the above-described substrate cleaning apparatuses has the following effects in terms of the cleaning effect of a substrate having a fine structure.
Although satisfactory, there were still issues to be resolved.

That is, in the substrate cleaning apparatus provided so as to rotate the substrate horizontally, each of the plurality of supply pipes 105 is configured to be swiveled and moved.
It is necessary to avoid mutual interference during the turning movement of the 05, and there is a problem that control of the turning operation becomes complicated. Further, there is a problem that idle operation time (time during which processing is not performed) occurs due to the turning operation, and the tact time of processing becomes long.

Further, as described above, in order to clean the inside of the fine structure of the substrate, a cleaning liquid jet having a particle diameter capable of penetrating into the inside is required, but the size of the fine structure portion differs depending on the type of the substrate. Therefore, in order to apply the cleaning liquid jet having the optimum particle size, the supply pipe 105 is required for each of the above-described substrate cleaning apparatuses.
It was necessary to replace the nozzle body 101 attached to the nozzle body with a nozzle body capable of spraying the cleaning liquid having the particle diameter. In particular, in a substrate cleaning apparatus configured to transport a substrate horizontally, the number of nozzle bodies 101 to be mounted is large, and the replacement operation becomes extremely complicated.

The above is a problem in cleaning the substrate.
For other processes, for example, in the etching process, the higher the jet flow rate of the etching solution, the higher the etching rate. Therefore, depending on the type of the substrate to be etched, the jet flow speed of the etching solution may be increased or conversely reduced. Need to be In addition, it is necessary to make the particle diameter of the etching liquid jet flow according to the size of the structure formed by etching.

SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and has as its object to provide a substrate cleaning apparatus capable of changing the particle diameter and the flow velocity of a processing liquid injected from a nozzle body.

[0013]

According to the first aspect of the present invention, there is provided a substrate supporting mechanism for supporting a substrate, and a processing liquid is jetted onto the substrate. A processing liquid ejecting mechanism, wherein the processing liquid ejecting mechanism jets a processing liquid onto the substrate, and a processing liquid supply that supplies a pressurized processing liquid to the nozzle body And a gas supply source for supplying gas under pressure to the nozzle body, wherein the nozzle body introduces a processing liquid supplied from the processing liquid supply source, and an end of the introduction flow path. A first throttle port which is formed in the portion and injects the processing liquid in the introduction flow path; and which communicates with the first throttle port and extends in a direction in which the processing liquid is injected from the first throttle port. Provided an injection flow path, communicated with the injection flow path,
A gas passage for injecting the pressurized gas supplied from the gas supply source in the ejection direction of the treatment liquid in the ejection passage, and an end of the ejection passage facing the first throttle port. And a second throttle port for ejecting the formed and atomized processing liquid.

According to this substrate processing apparatus, the pressurized processing liquid supplied from the processing liquid supply source to the nozzle body flows into the introduction flow path, and the first throttle port formed at the end of the introduction flow path From the injection channel. On the other hand, the pressurized gas supplied from the gas supply source and flowing into the gas flow path is jetted into the jet flow path, and the processing liquid and the pressurized gas collide in the jet flow path. As a result, the processing liquid is formed into a fine particle size. Then, the processing liquid and the pressurized gas mixed in the injection flow path are injected from the second throttle port, and at this time, the processing liquid particles are made finer and atomized, and the liquid crystal glass substrate and
It is sprayed on a substrate such as a semiconductor wafer.

The particle diameter and the jetting speed of the processing liquid atomized as described above depend on the pressure and the flow rate (flow rate) of the processing liquid supplied from the processing liquid supply source and the processing liquid supplied from the gas supply source. It depends on the pressure of the pressurized gas and its flow rate (flow rate). Therefore, by appropriately adjusting the pressure of the processing liquid and the pressure of the pressurized gas, the particle diameter and the injection speed of the processing liquid can be made most suitable for the processing. Incidentally, the higher the pressure of the pressurized gas, the smaller the particle diameter of the processing liquid to be injected and the higher the injection speed, and the higher the pressure of the processing liquid, the larger the particle diameter of the processing liquid to be injected. Small and high injection speed.

The processing of the substrate includes various processes such as a cleaning process and an etching process, and the types of the processing liquid and the pressurized gas are appropriately set according to the processes such as the cleaning process and the etching process.

The substrate processing apparatus according to the first aspect of the present invention is such that the substrate support mechanism includes a transport unit for transporting the substrate in a horizontal direction, as in the second aspect of the present invention. And wherein the substrate support mechanism includes a substrate support for horizontally supporting the substrate, and rotation driving means for horizontally rotating the substrate support. can do.

Further, as in the invention described in claim 4,
6. The apparatus according to claim 5, further comprising a liquid pressure control unit configured to automatically control a pressure of the processing liquid supplied to the nozzle body from the processing liquid supply source, or the nozzle body from the gas supply source. And a pressure control means for automatically controlling the pressure of the pressurized gas supplied to the apparatus.

According to the present invention, the pressure of the processing liquid supplied from the processing liquid supply source and the pressure of the pressurized gas supplied from the gas supply source are automatically adjusted as appropriate. Therefore, the particle diameter and the spray speed of the processing liquid sprayed from the nozzle body can be automatically made most suitable for the processing.

[0020]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, specific embodiments of the present invention will be described with reference to the accompanying drawings. FIG. 1 is an explanatory diagram illustrating a schematic configuration of a substrate cleaning apparatus according to the present embodiment, and FIG. 2 is a cross-sectional view illustrating a nozzle body according to the present embodiment.

As shown in FIG. 1, a substrate cleaning apparatus 1 of this embodiment
Is a substrate supporting device 2 that supports and horizontally rotates the substrate W
And a cleaning liquid ejecting apparatus 10 for ejecting a cleaning liquid onto the substrate W supported by the substrate supporting apparatus 2. The substrate W is a general term including a liquid crystal glass substrate, a semiconductor (silicon) wafer, a photomask glass substrate, an optical disk substrate, and the like.

The substrate support device 2 includes a support plate 4 provided with support pins 6 and a vacuum suction holder 5,
And a rotation shaft 3 for horizontally rotating. Support pin 6
And the vacuum suction holder 5 are respectively disposed at appropriate positions on the support plate 4 and fixed thereto.
In a state of being placed on the upper side, it is suction-held by the vacuum suction holder 5. Further, the rotating shaft 3 is driven to rotate about the axis by a driving means (not shown) as appropriate.

The cleaning liquid ejecting apparatus 10 is driven by a driving means (not shown) so that the processing position above the substrate W and the substrate W
A pivot arm 11 that pivots between a retracted position deviated from above and a plurality of nozzle bodies 20 fixed to a lower surface of the pivot arm 11 along a longitudinal direction of the pivot arm 11;
A cleaning liquid supply source 13 for supplying a cleaning liquid to each nozzle body 20;
Pressurized gas supply source 1 for supplying a pressurized gas to each nozzle body 20
6 and the like.

The cleaning liquid supply source 13 includes a pump and the like, and supplies a pressurized cleaning liquid to each of the nozzle bodies 20 through a supply pipe 13a and a pressure control means 14 provided in the middle of the supply pipe 13a. I do. The pressurized gas supply source 16 also includes a pump or the like, and supplies the pressurized gas to each of the nozzle bodies 20 via a supply pipe 16a and a pressure control means 17 provided in the middle of the supply pipe 16a. Supply.

Each of the pressure control means 14 and 17 includes, for example, a proportional electromagnetic pilot relief valve or the like so that the pressure of the cleaning liquid or the pressurized gas can be continuously changed. The operation of each of these pressure control means 14 and 17 is controlled by a control device 19, and under the control of the control device 19, each of the nozzles 2 is supplied from the cleaning liquid supply source 13.
Pressure of the cleaning liquid supplied to the pressure source 0 and a pressurized gas supply source 1
6, the pressure of the gas supplied to each nozzle body 20 is appropriately adjusted.

As shown in FIG. 2, the nozzle body 20
A cleaning liquid supplied from a cleaning liquid supply source 13 and a pressurized gas supplied from a pressurized gas supply source 16 are mixed, and the main body 21, the first nozzle 22, and the second nozzle 23 are provided. The cleaning liquid is atomized, and the atomized cleaning liquid is applied to the substrate W
Spray against.

As shown in the figure, the main body 21 includes a liquid port 26 to which the supply pipe 13a is connected, and the supply pipe 1a.
A gas port 27 to which 6a is connected is provided. Each port 26, 27 extends in a direction orthogonal to the central axis of the main body 21 and is open to the outer periphery of the main body 21. . At the lower end of the main body 21, a mounting portion 30 having a smaller diameter than the base is formed.

A stepped hole 32 for fixing the first nozzle 22 is formed in the main body 21. The stepped hole 32 opens at the shaft end of the mounting portion 30 and extends in the axial direction of the main body 21. The stepped hole 32 is provided in the mounting portion 3.
The diameter is gradually reduced from the shaft end of 0 and communicates with the inside of the liquid port 26, and a screw hole 33 is formed on the bottom side.

The first nozzle 22 is inserted into the stepped hole 32 of the main body 21 and is fixed to the main body 21 while being screwed into the screw hole 33. The lower side of the first nozzle 22 protrudes downward from the stepped hole 32, and the lower end thereof is a nozzle shaft 34 having a smaller diameter than the base side.

In the first nozzle 22, an introduction channel 35 for introducing a cleaning liquid is formed. This introduction channel 35 is
The first nozzle 22 penetrates in the axial direction, and its upper opening communicates with the liquid port 26 through the stepped hole 32 of the main body 21. Further, an aperture 36 is formed in the lower opening. In this manner, the cleaning liquid supplied from the cleaning liquid supply source 13 flows into the introduction flow path 35 of the first nozzle 22 from the liquid port 26, and is jetted from the throttle port 36.

The second nozzle 23 is connected to the first nozzle 22 protruding from the stepped hole 32. This second
The nozzle 23 is formed with a concave portion 37 opening at the upper end thereof, and the second nozzle 23 is arranged in a state in which the nozzle shaft 34 of the first nozzle 22 and the like are housed in the concave portion 37, and has an upper end surface thereof. Is fixed to the main body 21 by a nut 38 in a state where the abutment is in contact with the end face of the mounting portion 30.

The second nozzle 23 has an injection channel 39 which is open at the lower end surface and the bottom surface of the recess 37. The nozzle shaft 34 of the first nozzle 22 is inserted into the injection flow path 39, whereby the throttle port 36 of the introduction flow path 35 and the injection flow path 39 communicate with each other. . A throttle port 40 is formed in the lower opening of the injection flow path 39.

The main body 21 includes the gas port 2.
A gas flow path 24 that communicates with the recess 7 is formed. The pressurized gas supplied from the pressurized gas supply source 16 to the gas port 27 passes through the gas flow path 24, the recess 32, and the recess 37 sequentially. Then, it flows into the injection flow path 39 via the flow path.

Thus, according to the nozzle body 20, the cleaning liquid supplied from the processing liquid supply source 13 to the liquid port 26 flows into the introduction flow path 35 of the first nozzle 22, The fuel is injected from the throttle port 36 formed at the lower end of the nozzle, and flows into the injection channel 39 of the second nozzle 23.
On the other hand, the pressurized gas supplied from the pressurized gas supply source 16 to the gas port 27 flows into the injection flow path 39 via the gas flow path 24, the concave portion 32, and the concave portion 37 in order, and is injected. The cleaning liquid and the pressurized gas collide and mix in the flow path 39.
As a result, the cleaning liquid is formed into a fine particle diameter, and the cleaning liquid and the pressurized gas mixed in the injection flow path 39 are injected from the throttle port 40. At this time, the cleaning liquid particles are further miniaturized, atomized, and sprayed onto the substrate W.

The particle size and the jetting speed of the cleaning liquid atomized in this manner differ depending on the pressure of the cleaning liquid supplied from the cleaning liquid supply source 13 and the pressure of the pressurized gas supplied from the pressurized gas supply source 16. . Therefore, by appropriately adjusting the pressure of the cleaning liquid and the pressure of the pressurized gas, the particle diameter and the injection speed of the cleaning liquid can be made most suitable for the treatment. Incidentally, the higher the pressure of the pressurized gas, the smaller the particle size of the cleaning liquid to be injected and the higher the injection speed. Also, the higher the pressure of the cleaning liquid, the more
The particle size of the cleaning liquid to be sprayed is small and the spray speed is high.

As described above, in the present embodiment, the operation of the pressure control means 14 and 17 is controlled by the control device 19, and by these controls, the cleaning liquid supply source 13 supplies And the pressure of the gas supplied from the pressurized gas supply source 16 to each nozzle body 20 are automatically adjusted as appropriate.

More specifically, first, in the first stage, the pressure of the cleaning liquid and the pressure of the pressurized gas are reduced, and the cleaning liquid having a relatively large particle diameter is ejected from the nozzle body 20 to thereby reduce the surface of the substrate W. In the second stage, the pressure of the cleaning liquid and the pressure of the pressurized gas are increased,
The cleaning liquid having a fine particle diameter is sprayed from the nozzle body 20 to cause the cleaning liquid particles to enter the inside of the fine structure of the substrate W, and to wash away the particles inside the fine structure.

Next, the substrate cleaning apparatus 1 having the above configuration
Will be described. It is assumed that the turning arm 11 is located at a retracted position deviated from above the substrate W.

First, the substrate W is transported by a transporting means as appropriate, placed on the support pins 6 of the substrate support device 2, and suction-held by the vacuum suction holder 5. Next, the rotating shaft 3 is driven to rotate about its axis by a driving means (not shown), whereby the substrate W is horizontally rotated.

In this state, the swivel arm 11 is swiveled to the processing position above the substrate W. Then, the pressurized cleaning liquid is supplied from the cleaning liquid supply source 13 and the pressurized gas is supplied from the pressurized gas supply source 16. The cleaning liquid supplied to each nozzle body 20 and atomized from each nozzle body 20 is sprayed onto the substrate W to clean the substrate W.

In the first stage, the pressure of the supplied cleaning liquid and the pressure of the pressurized gas are set to low pressures. As a result, a cleaning liquid having a relatively large particle diameter is ejected from the nozzle body 20, and particles attached to the surface of the substrate W are washed away by the cleaning liquid.

Next, the pressure of the cleaning liquid and the pressure of the pressurized gas are set to a high pressure. Thereby, from the nozzle body 20,
A cleaning liquid having a fine particle diameter is sprayed, and the cleaning liquid particles enter the inside of the fine structure of the substrate W, and particles inside the fine structure are washed away.

After the two-stage cleaning has been performed as described above, the supply of the cleaning liquid from the cleaning liquid supply source 13 and the supply of the pressurized gas from the pressurized gas supply source 16 are stopped.
Is returned to the retracted position. Then, after this, the substrate W
Is rotated at a high speed for a predetermined time to dry the substrate W. Thereafter, the substrate support device 2 is stopped, and the substrate W is carried out of the substrate cleaning device 1.

As described in detail above, according to the substrate cleaning apparatus 1 of the present embodiment, the pressure of the cleaning liquid and the pressurized gas supplied to the nozzle body 20 is automatically changed, so that the jetting from the nozzle body 20 is performed. The particle size of the cleaning solution to be performed can be arbitrarily set according to the purpose of cleaning. Therefore, it is not necessary to provide a plurality of types of nozzle bodies as in a conventional substrate cleaning apparatus having a nozzle body in which the particle size of the spray cleaning liquid is fixedly set, and these are alternately transferred above the substrate W. No tact time is required, and the tact time of the processing can be shortened.

Further, when cleaning a substrate having different dimensions of the fine structure, a cleaning liquid jet having an optimum particle diameter for the substrate can be easily obtained. There is no need to replace the body with one capable of spraying a cleaning liquid having the particle diameter, and such a cumbersome operation is unnecessary.

As described above, one embodiment of the present invention has been described. However, specific embodiments that can be adopted by the present invention are not limited thereto. For example, in the above example, a so-called spin type substrate cleaning apparatus has been illustrated, but the present invention can also be applied to a horizontal transfer type substrate cleaning apparatus as shown in FIG.

The substrate cleaning apparatus 50 shown in FIG. 3 has a housing-like cover 51 having an opening 51a into which the substrate W is carried in and an opening 51b into which the substrate W is carried out. It comprises a plurality of transport rollers 52 disposed, a plurality of 20 rows of nozzles disposed above the transport rollers 52, a plurality of 55 rows of nozzles disposed below the transport rollers 52, and the like. The transport roller 52 closest to the opening 51a is provided with a nip roller 53 that abuts on the upper portion and nips the substrate W. In this manner, the rotation of the transport roller 52 and the nip roller 53 causes the substrate W to be carried in from the opening 51a in the direction indicated by the arrow, and to be carried out from the opening 51b in the direction indicated by the arrow.

Each of the nozzle bodies 20 has a structure as shown in FIG. 2 similarly to the above-described example, and as shown in FIG. The cleaning gas is supplied from the cleaning liquid supply source 13, and the pressurized gas is supplied from the pressurized gas supply source 16 via the pressure control means 17. Each nozzle body 20 is fixed to the support arm 54. Thus, the atomized cleaning liquid is jetted from each nozzle body 20 toward the substrate W, and the cleaning liquid
Is washed.

The operation of the pressure control means 14 and 17 is controlled by the control device 19, and the pressure of the cleaning liquid supplied to each nozzle body 20 from the cleaning liquid supply source 13 and the pressure of the cleaning gas supplied from the pressurized gas supply source 16 to each nozzle body 20 are controlled. The pressure of the gas supplied to the nozzle body 20 is automatically adjusted as appropriate. Thereby, the particle diameter of the cleaning liquid particles ejected from each nozzle body 20 is adjusted.

Each of the nozzle bodies 55 is fixed to a supply pipe 56 connected to the cleaning liquid supply source, and discharges the cleaning liquid supplied through the supply pipe 56 toward the lower surface of the substrate W. I do.

A plurality of the substrate cleaning apparatuses 50 are provided along the direction in which the substrate W is transported. The particle size of the cleaning liquid sprayed from the nozzle body 20 of each substrate transfer device 50 is larger for the substrate cleaning device 50 disposed on the upstream side in the transport direction of the substrate W, and the substrate disposed on the downstream side. The cleaning device 50 is set to be finer.

The substrate cleaning apparatus 50 also automatically changes the pressures of the cleaning liquid and the pressurized gas supplied to the nozzle body 20 in the same manner as in the substrate cleaning apparatus 1 of the above example, so that The particle size of the cleaning liquid sprayed from can be arbitrarily set according to the cleaning purpose,
When cleaning the substrate W having different dimensions of the fine structure, a cleaning liquid jet having an optimum particle size for the substrate W can be easily obtained, and the nozzle body is not used as in the conventional substrate cleaning apparatus described. There is no need to replace the cleaning liquid with a particle size with a sprayable liquid, and such troublesome work is unnecessary.

In the above example, the present invention is embodied in a substrate cleaning apparatus. However, the present invention is not limited to this, and the present invention is not limited to this. The present invention can be applied to other processing apparatuses such as an apparatus and a developer application apparatus.

[Brief description of the drawings]

FIG. 1 is an explanatory diagram showing a schematic configuration of a substrate cleaning apparatus according to an embodiment of the present invention.

FIG. 2 is a sectional view showing a nozzle body according to the embodiment.

FIG. 3 is a front sectional view showing a substrate cleaning apparatus according to another embodiment of the present invention.

FIG. 4 is an explanatory diagram showing a schematic configuration of a substrate cleaning apparatus according to a conventional example.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Substrate cleaning apparatus 2 Substrate support apparatus 10 Cleaning liquid injection apparatus 13 Cleaning liquid supply source 14 Pressure control means 16 Pressurized gas supply source 17 Pressure control means 19 Control device 20 Nozzle body 21 Main body 22 First nozzle 23 Second nozzle 24 Gas flow path 35 Introductory flow path 36 Throttle port 39 Injection flow path 40 Throttle port

Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat II (Reference) H01L 21/304 643 H01L 21/304 643C 648 648K 648L (72) Inventor Shunji Matsumoto 1-10 Fuso-cho, Amagasaki City, Hyogo Prefecture F term in Sumitomo Precision Industries, Ltd. (reference) 2H088 FA17 FA30 MA20 2H090 JB02 JC19 3B201 AA02 AA03 AB14 BB21 BB90 BB92 BB98 CD43 4G059 AA01 AA08 AA09 AC21 AC24 AC30 BB04

Claims (5)

[Claims] 1. A substrate processing apparatus comprising: a substrate support mechanism for supporting a substrate; and a processing liquid ejecting mechanism for injecting a processing liquid onto the substrate, wherein the processing liquid ejecting mechanism is configured to A nozzle body for injecting the processing liquid, a processing liquid supply source for supplying a processing liquid pressurized to the nozzle body, and a gas supply source for supplying a pressurized gas to the nozzle body. An introduction flow path for introducing the processing liquid supplied from the processing liquid supply source, a first throttle formed at an end of the introduction flow path, and jetting the processing liquid in the introduction flow path; An injection flow path that is communicated with the throttle port and extends in the direction of jetting the processing liquid that is jetted from the first throttle port; and a pressurization that is connected to the injection flow path and is supplied from the gas supply source. A gas passage for injecting gas in the ejection direction of the treatment liquid in the ejection passage, To face the first aperture opening is formed at an end of the injection passage, the substrate processing apparatus characterized by comprising a second aperture opening for injecting atomized processing solution. 2. The substrate processing apparatus according to claim 1, wherein the substrate support mechanism includes a transfer unit that transfers the substrate in a horizontal direction. 3. The substrate processing apparatus according to claim 1, wherein the substrate support mechanism includes a substrate support table for horizontally supporting the substrate, and rotation driving means for horizontally rotating the substrate support table. 4. The substrate processing apparatus according to claim 1, further comprising a liquid pressure control unit that automatically controls a pressure of the processing liquid supplied from the processing liquid supply source to the nozzle body. 5. The substrate processing apparatus according to claim 1, further comprising an air pressure control unit that automatically controls a pressure of a pressurized gas supplied from the gas supply source to the nozzle body.