JP2002350601A - Method for cleaning lens substrate - Google Patents

Method for cleaning lens substrate

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Publication number
JP2002350601A
JP2002350601A JP2001156612A JP2001156612A JP2002350601A JP 2002350601 A JP2002350601 A JP 2002350601A JP 2001156612 A JP2001156612 A JP 2001156612A JP 2001156612 A JP2001156612 A JP 2001156612A JP 2002350601 A JP2002350601 A JP 2002350601A
Authority
JP
Japan
Prior art keywords
lens substrate
cleaning
lens
acid
transmittance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2001156612A
Other languages
Japanese (ja)
Inventor
Hiroyuki Suzuki
博幸 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2001156612A priority Critical patent/JP2002350601A/en
Publication of JP2002350601A publication Critical patent/JP2002350601A/en
Withdrawn legal-status Critical Current

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  • Cleaning By Liquid Or Steam (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a lens substrate cleaning method by which a lens substrate can be cleaned until the surface of the cleaned lens substrate has almost ideal cleanliness. SOLUTION: The surface of the lens substrate consisting of CaF2 single crystal is ground to a prescribed surface shape. After that, the lens substrate is subjected to acid treatment as the pretreatment of a cleaning step to clean the ground surface of the lens substrate.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術】本発明は、高機能が要求される用
途に用いられるレンズ基板の洗浄方法に関するものであ
る。
The present invention relates to a method for cleaning a lens substrate used for applications requiring high performance.

【0002】[0002]

【従来の技術】従来、CaF2 、MgF2 等のフッ化物
系結晶材料から成るレンズ等の光学素子は、その光学特
性が極めて広範囲の波長帯に亘って良好な透過率を持つ
とともに低分散であることから、高級カメラレンズ、テ
レビジョンカメラレンズ等の高機能が要求される高精度
なレンズに用いられてきた。
Conventionally, optical elements such as lenses made of fluoride crystal material of CaF 2, MgF 2, etc., its optical properties are very over a wide range of wavelength bands with low dispersion with having good transmissivity For this reason, it has been used for high-precision lenses, such as high-grade camera lenses and television camera lenses, which require high functions.

【0003】又、CaF2 、MgF2 等のフッ化物系結
晶材料から成る光学素子はエキシマレーザー等の短波長
光でもその透過率が高いことから、短波長用の光学素子
として使用することが検討され始めている。
Further, since an optical element made of a fluoride-based crystal material such as CaF 2 or MgF 2 has a high transmittance even for short-wavelength light such as an excimer laser, it is studied to use it as an optical element for short wavelength. Is starting to be.

【0004】[0004]

【発明が解決しようとする課題】上記のような光学素子
の洗浄においては、従来は洗浄槽に洗浄液を入れた中に
レンズを浸漬させて超音波洗浄法により洗浄するのが一
般的であった。このような洗浄槽を数槽設けておき、界
面活性剤や純水等によって洗浄した後、最終的にイソプ
ロピールアルコール洗浄を行う場合には洗浄槽が大きく
なり、洗浄機本体も高価で巨大となり、更に乾燥等で使
用される溶剤も非常に多くなる。
In the cleaning of the optical element as described above, conventionally, it has been general that the lens is immersed in a cleaning liquid in a cleaning tank and cleaned by an ultrasonic cleaning method. . When several such washing tanks are provided, and after washing with a surfactant or pure water, and finally isopropyl alcohol washing is performed, the washing tank becomes large, and the washing machine itself becomes expensive and huge. In addition, the amount of solvent used for drying and the like also becomes very large.

【0005】又、環境保護という観点から言えば、溶剤
使用を削減していくか、更に溶剤を使用しない洗浄方法
が今後必要になってくる。このように従来の高精度なレ
ンズの洗浄は所謂WET法と呼ばれる方法で行われてい
たが、更に短波長の紫外光を扱う光学素子のレンズ表面
の汚染物質を除去するためにはWET法による洗浄のみ
では不十分であり、DRY洗浄も重要になってきた。即
ち、エキシマレーザーの波長領域ではレンズ表面の汚染
物質によりレンズの透過率が低下してしまうが、特に汚
染物質として有機物残さや研磨工程での研磨剤残さがレ
ンズの透過率低下を招くことが分かってきた。
Further, from the viewpoint of environmental protection, it is necessary to reduce the use of a solvent or to use a cleaning method that does not use a solvent in the future. As described above, the conventional high-precision lens cleaning is performed by a so-called WET method. However, in order to further remove contaminants on the lens surface of an optical element that handles ultraviolet light having a short wavelength, the WET method is used. Cleaning alone is not sufficient, and DRY cleaning has also become important. That is, in the wavelength region of the excimer laser, the transmittance of the lens decreases due to the contaminants on the lens surface, but it is understood that organic residues as the contaminants and abrasive residues in the polishing process cause the decrease in the transmittance of the lens. Have been.

【0006】従来、CaF2 単結晶のレンズ基板の洗浄
においては、このようなWET法とDRY法の組み合わ
せにより洗浄工程を設定していたが、使用するエキシマ
レーザーの短波長化に伴い、これらの洗浄方法のみでは
十分な光学特性が得られない場合がでてきた。
Conventionally, in cleaning a lens substrate of CaF 2 single crystal, a cleaning process is set by a combination of such a WET method and a DRY method. In some cases, sufficient optical characteristics cannot be obtained by only the cleaning method.

【0007】本発明は上記問題点に鑑みてなされたもの
で、その目的とする処は、レンズ基板洗浄後の表面の清
浄度をほぼ理想状態にまでにすることができるレンズ基
板の洗浄方法を提供することにある。
SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and an object thereof is to provide a method of cleaning a lens substrate capable of reducing the surface cleanliness after cleaning the lens substrate to almost an ideal state. To provide.

【0008】[0008]

【課題を解決するための手段】上記目的を達成するた
め、請求項1記載の発明は、CaF2 単結晶から成るレ
ンズ基板の表面を所定の面形状に研磨した後、前記レン
ズ基板の表面を洗浄する洗浄工程の前処理として前記レ
ンズ基板を酸処理することを特徴とする。
In order to achieve the above object, according to the first aspect of the present invention, a surface of a lens substrate made of CaF 2 single crystal is polished into a predetermined surface shape, and then the surface of the lens substrate is polished. The lens substrate is subjected to an acid treatment as a pretreatment of a cleaning step of cleaning.

【0009】請求項2記載の発明は、請求項1記載の発
明において、前記酸処理に蓚酸、酒石酸又はクエン酸を
使用することを特徴とする。
The invention according to claim 2 is characterized in that, in the invention according to claim 1, oxalic acid, tartaric acid or citric acid is used for the acid treatment.

【0010】[0010]

【発明の実施の形態】以下に本発明の実施の形態につい
て説明する。
Embodiments of the present invention will be described below.

【0011】以上説明したように、従来一般的に行われ
てきた洗浄方法における問題点としては、エキシマレー
ザーの短波長化に伴い洗浄後の光学特性が不十分である
ことが指摘されている。即ち、洗浄後のレンズの透過率
が理論値になっておらず、レンズ基板表面に汚染物質が
除去されとないで残っていることが予想される。
As described above, it has been pointed out that a problem in the cleaning method generally performed conventionally is that the optical characteristics after cleaning are insufficient due to the shortening of the wavelength of the excimer laser. That is, it is expected that the transmittance of the lens after cleaning does not reach the theoretical value, and contaminants remain on the lens substrate surface without being removed.

【0012】レンズの透過率劣化を招く表面の要因とし
ては、 1)表面粗さに起因する散乱 2)表面に残る有機残さによる吸収 3)表面に残る研磨剤等の無機パーテイクルによる吸収 4)表面加工変質層による吸収 が考えられる。
Factors of the surface that cause deterioration of the transmittance of the lens include: 1) scattering due to surface roughness 2) absorption by organic residues remaining on the surface 3) absorption by inorganic particles such as abrasive remaining on the surface 4) surface Absorption by the affected layer is considered.

【0013】1)の表面粗さについては検証実験の結果
から表面粗さを0.5nm(平均粗さRMS)程度以下
に管理すれば透過率に対する影響も非常に少ないことが
分かってきた。2),3),4)については、これまで
の洗浄方法で洗浄した場合、エキシマレーザーでの波長
帯、特に193nmでの波長で透過率に影響が残ること
が予想される。
As for the surface roughness of 1), it has been found from the results of verification experiments that if the surface roughness is controlled to about 0.5 nm (average roughness RMS) or less, the influence on the transmittance is very small. Regarding 2), 3) and 4), it is expected that the transmittance will remain in the wavelength band of the excimer laser, particularly at the wavelength of 193 nm, when the cleaning is performed by the conventional cleaning method.

【0014】そこで、本発明は次のような方法を採用し
た。
Therefore, the present invention employs the following method.

【0015】即ち、CaF2 単結晶から成るレンズ基板
の表面を所定の面形状に研磨し、その後、レンズ基板の
表面を洗浄する洗浄工程の前処理として前記レンズ基板
を酸処理することを特徴とする。
That is, the surface of the lens substrate made of CaF 2 single crystal is polished into a predetermined surface shape, and then the lens substrate is subjected to an acid treatment as a pretreatment of a cleaning step of cleaning the surface of the lens substrate. I do.

【0016】通常のレンズ加工工程としては、レンズ材
料から先ず大まかなレンズ形状を形成し、その後、研磨
により最終的な面形状と面粗さを得る。このため、レン
ズ加工工程での汚染物質は加工工程により異なるが、基
本的には研磨剤、ゴミ等の無機物及び油、指紋等の有機
物である。これらの汚染物質は、共有結合、静電力、フ
ァンデルワールス力等によりレンズの各加工工程で発生
する。
In a normal lens processing step, a rough lens shape is first formed from a lens material, and then a final surface shape and surface roughness are obtained by polishing. For this reason, the contaminants in the lens processing step vary depending on the processing step, but are basically inorganic substances such as abrasives and dust, and organic substances such as oil and fingerprints. These contaminants are generated in each processing step of the lens by covalent bonding, electrostatic force, van der Waals force, and the like.

【0017】又、研磨工程での加工により表面付近の微
小領域に加工変質層が存在することもある。この加工変
質層が短波長の吸収層になることも考えられる。
Further, there is a case where a deteriorated layer is present in a minute region near the surface due to the processing in the polishing step. It is also conceivable that this work-affected layer becomes a short-wavelength absorption layer.

【0018】ところで、レンズは最終的な面形状と面粗
さが得られ後、表面にレンズの透過率向上のための反射
防止膜を形成する。そのため、レンズ加工が終了した後
の最終洗浄は非常に重要になる。特に、紫外線領域で使
用される例えばエキシマレーザー用のレンズではほぼ理
論値に近い透過率が要求されるため、レンズ加工後の最
終洗浄がレンズの光学性能を左右してしまう。
After the final surface shape and surface roughness of the lens are obtained, an antireflection film for improving the transmittance of the lens is formed on the surface. Therefore, final cleaning after the lens processing is completed is very important. In particular, for a lens for an excimer laser, for example, used in the ultraviolet region, a transmittance close to a theoretical value is required. Therefore, final cleaning after lens processing affects the optical performance of the lens.

【0019】更に、このような波長領域での透過率劣化
を引き起こす要因として、これまで述べたように、有機
物残さ、研磨剤残さ、無機パーテイクル、加工変質層等
が関与していることが分かってきたため、レンズ表面の
洗浄が重要である。
Further, as described above, it is known that factors that cause such transmittance deterioration in the wavelength region are the residue of an organic substance, the residue of an abrasive, the inorganic particles, the deteriorated layer, and the like. Therefore, it is important to clean the lens surface.

【0020】そこで、本発明においては、レンズ加工後
の最終洗浄において洗浄効果を十分発揮するために、洗
浄前処理として酸処理を行うことを提案した。
Therefore, in the present invention, it has been proposed to perform an acid treatment as a pre-cleaning treatment in order to sufficiently exert a cleaning effect in final cleaning after lens processing.

【0021】基板表面に残っているこ有機残さ、無機パ
ーテイクル、加工変質層は酸処理することによって表面
からエッチング作用により除去することができ、その
後、通常の洗浄工程を経ることにより、透過率劣化を招
く要因を取り除くことが可能になる。
The organic residue, the inorganic particles, and the degraded layer remaining on the substrate surface can be removed from the surface by an acid treatment by an etching treatment. Can be eliminated.

【0022】但し、CaF2 は非常に化学的に不安定な
材料であるため、反応性が高い無機酸、例えば硝酸、硫
酸、塩酸、フッ酸等を使用すると基板表面が侵されてし
まうため、これらの酸は使用することができない。又、
反応性が低い有機酸を使用した場合でも、長時間これら
の酸に浸潰したままにすると表面が変質してしまう問題
があるため、処理条件を厳密に決定しておけば対策は可
能である。
However, since CaF 2 is a very chemically unstable material, the use of a highly reactive inorganic acid, such as nitric acid, sulfuric acid, hydrochloric acid, hydrofluoric acid, etc., will damage the substrate surface. These acids cannot be used. or,
Even if organic acids with low reactivity are used, there is a problem that the surface will be deteriorated if immersed in these acids for a long time, so measures can be taken if the processing conditions are strictly determined. .

【0023】このようにレンズ基板表面に付着又は基板
表面に存在する吸収層を酸によりエッチング除去するこ
とにより、ほぼ理想状態に近い表面を得ることができる
ため、最終的に反射防止膜形成後のエキシマレーザー
(193nm)での透過率は非常に高いものが得られ
る。
By etching away the absorbing layer adhered to the lens substrate surface or existing on the substrate surface with an acid, an almost ideal surface can be obtained. An extremely high transmittance with an excimer laser (193 nm) can be obtained.

【0024】[実施例]以下に本発明の実施例について
説明する。
Embodiment An embodiment of the present invention will be described below.

【0025】<実施例1>先ず、サンプルとしては、C
aF2 単結晶基板から切り出したものを使用した。尚、
材料のグレードについては内部吸収が0.2%以下のも
のである。サンプル形状については、φ30×2tmm
の両面を研磨した平行平板を使用した。これらの基板を
使用して各処理条件による193nmでの透過率を評価
した。
<Example 1> First, as a sample, C
What was cut out from the aF 2 single crystal substrate was used. still,
The material grade has an internal absorption of 0.2% or less. For sample shape, φ30 × 2tmm
Was used. Using these substrates, the transmittance at 193 nm under each processing condition was evaluated.

【0026】表面粗さはAFM測定装置で測定し、平均
粗さRMSで評価した。研磨はダイヤモンド研磨剤を使
用して行った。酸処理は、1%蓚酸水溶液に室温で30
秒浸漬した後、純水に1分間リンス処理し、その後、ア
セトン浸漬処理して手拭き乾燥により仕上げた。
The surface roughness was measured with an AFM measuring device and evaluated by the average roughness RMS. Polishing was performed using a diamond abrasive. The acid treatment is performed in a 1% aqueous oxalic acid solution at room temperature for 30 minutes.
After immersion for 2 seconds, the substrate was rinsed in pure water for 1 minute, and then immersed in acetone to finish by hand wiping and drying.

【0027】その後、更にUV/O3 処理によって有機
残さを分解除去する工程を取り入れた。処理時間は5分
間、光源との距離30mm、照射強度12mW/cm2
であった。この処理条件で処理した基板の最終的な19
3nmでの透過率として99.20%が得られた。この
値はCaF2 の理論透過率にほぼ等しく、理想的な清浄
度が得られた。このサンプルの表面粗さは0.5nm
(RMS)であった。
Thereafter, a step of decomposing and removing organic residues by UV / O 3 treatment was introduced. The processing time is 5 minutes, the distance to the light source is 30 mm, the irradiation intensity is 12 mW / cm 2
Met. The final 19 of the substrate processed under these processing conditions
99.20% was obtained as the transmittance at 3 nm. This value was almost equal to the theoretical transmittance of CaF 2 , and an ideal cleanliness was obtained. The surface roughness of this sample is 0.5 nm
(RMS).

【0028】<実施例2>先ず、サンプルとしては、C
aF2 単結晶基板から切り出したものを使用した。尚、
材料のグレードについては内部吸収が0.2%以下のも
のである。サンプル形状については、φ30×2tmm
の両面を研磨した平行平板を使用した。これらの基板を
使用して各処理条件による193nmでの透過率を評価
した。
<Embodiment 2> First, as a sample, C
What was cut out from the aF 2 single crystal substrate was used. still,
The material grade has an internal absorption of 0.2% or less. For sample shape, φ30 × 2tmm
Was used. Using these substrates, the transmittance at 193 nm under each processing condition was evaluated.

【0029】表面粗さはAFM測定装置で測定し、平均
粗さRMSで評価した。研磨はダイヤモンド研磨剤を使
用して行った。酸処理は、2%酒石酸水溶液に3室温で
30秒で浸漬した後、純水に1分間リンス処理し、その
後、アセトン浸漬処理して手拭き乾燥により仕上げた。
The surface roughness was measured with an AFM measuring device and evaluated by the average roughness RMS. Polishing was performed using a diamond abrasive. The acid treatment was performed by immersing in a 2% tartaric acid aqueous solution at 3 room temperature for 30 seconds, rinsing in pure water for 1 minute, then immersing in acetone, and finishing by hand wiping and drying.

【0030】その後、更にUV/O3 処理によって有機
残さを分解除去する工程を取り入れた。処理時間は5分
間、光源との距離30mm、照射強度12mW/cm2
であった。この処理条件で処理した基板の最終的な19
3nmでの透過率として92.18%が得られた。この
値はCaF2 の理論透過率にほぼ等しく、理想的な清浄
度が得られた。このサンプルの表面粗さは0.65nm
(RMS)であった。
Thereafter, a step of decomposing and removing organic residues by UV / O 3 treatment was introduced. The processing time is 5 minutes, the distance to the light source is 30 mm, the irradiation intensity is 12 mW / cm 2
Met. The final 19 of the substrate processed under these processing conditions
A transmittance at 3 nm of 92.18% was obtained. This value was almost equal to the theoretical transmittance of CaF 2 , and an ideal cleanliness was obtained. The surface roughness of this sample is 0.65 nm
(RMS).

【0031】[0031]

【発明の効果】以上の説明で明らかなように、本発明に
よれば、CaF2 単結晶から成るレンズ基板の表面を所
定の面形状に研磨した後、前記レンズ基板の表面を洗浄
する洗浄工程の前処理として前記レンズ基板を酸処理す
るようにしたため、レンズ基板洗浄後の表面の清浄度を
ほぼ理想状態にまでにすることができるという効果が得
られる。
As is apparent from the above description, according to the present invention, after the surface of a lens substrate made of CaF 2 single crystal is polished to a predetermined surface shape, a cleaning step of cleaning the surface of the lens substrate is performed. Since the lens substrate is subjected to the acid treatment as the pre-treatment, an effect is obtained that the cleanliness of the surface after cleaning the lens substrate can be made almost ideal.

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 CaF2 単結晶から成るレンズ基板の表
面を所定の面形状に研磨した後、前記レンズ基板の表面
を洗浄する洗浄工程の前処理として前記レンズ基板を酸
処理することを特徴とするレンズ基板の洗浄方法。
1. A lens substrate made of a CaF 2 single crystal is polished to a predetermined surface shape, and then the lens substrate is subjected to an acid treatment as a pretreatment of a cleaning step of cleaning the surface of the lens substrate. Cleaning method for the lens substrate.
【請求項2】 前記酸処理は蓚酸、酒石酸又はクエン酸
を使用することを特徴とする請求項1記載のレンズ基板
の洗浄方法。
2. The method according to claim 1, wherein the acid treatment uses oxalic acid, tartaric acid or citric acid.
JP2001156612A 2001-05-25 2001-05-25 Method for cleaning lens substrate Withdrawn JP2002350601A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001156612A JP2002350601A (en) 2001-05-25 2001-05-25 Method for cleaning lens substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001156612A JP2002350601A (en) 2001-05-25 2001-05-25 Method for cleaning lens substrate

Publications (1)

Publication Number Publication Date
JP2002350601A true JP2002350601A (en) 2002-12-04

Family

ID=19000604

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001156612A Withdrawn JP2002350601A (en) 2001-05-25 2001-05-25 Method for cleaning lens substrate

Country Status (1)

Country Link
JP (1) JP2002350601A (en)

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