JP2002346910A - Polishing method and device - Google Patents

Polishing method and device

Info

Publication number
JP2002346910A
JP2002346910A JP2001151884A JP2001151884A JP2002346910A JP 2002346910 A JP2002346910 A JP 2002346910A JP 2001151884 A JP2001151884 A JP 2001151884A JP 2001151884 A JP2001151884 A JP 2001151884A JP 2002346910 A JP2002346910 A JP 2002346910A
Authority
JP
Japan
Prior art keywords
pad
polishing
angle
rotating
polishing head
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001151884A
Other languages
Japanese (ja)
Inventor
Takaaki Kozuki
貴晶 上月
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2001151884A priority Critical patent/JP2002346910A/en
Publication of JP2002346910A publication Critical patent/JP2002346910A/en
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To provide a polishing device allowing polishing in an optimum state by bringing a working surface of an object to be polished into uniform pressure contact with the surface of a pad and improvement of polishing performance, a polishing rate and productivity. SOLUTION: In this polishing method for polishing an object 3 to be polished supported by a rotating polishing head by bringing the object 3 into pressure contact with the surface of the pad 2 provided on a rotating surface plate and making the surface uniform by bringing a rotating pad conditioner 4 into pressure contact with the surface of the pad 2, polishing of the object 3 to be polished by a polishing head 5 and conditioning of the surface of the pad 2 by the pad conditioner 4 are coaxially performed. Since polishing can be performed by making the angle of the polishing head 5 to the surface of the pad 2 same as that of the pad conditioner 4 to the surface of the pad 2, the working surface of the object 3 to be polished is in uniform pressure contact with the surface of the pad 2. The angle is normally set to a right angle.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、薄板状の被研磨物
を研磨するための研磨方法および装置に関し、特に半導
体ウエーハ、LCD用ガラス板等の化学的機械的研磨
(CMP)方法および装置に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a polishing method and apparatus for polishing a thin plate-like object to be polished, and more particularly to a chemical mechanical polishing (CMP) method and apparatus for a semiconductor wafer, a glass plate for an LCD, and the like. Things.

【0002】[0002]

【従来の技術】図5は、従来の半導体ウエーハ等の被研
磨物の研磨装置を示している。同図において、回転機構
を有する定盤1上にパッド2が両面テープ等により固定
されている。この定盤1の上方に、ウエーハ等の薄板状
の被研磨物3を保持する研磨ヘッド5が設置されてい
る。この研磨ヘッド5の回転軸5aはシリンダ等の回転
・昇降機構6に連結されている。研磨ヘッド5には、被
研磨物3を保持する面にその吸着保持および緩衝材とし
て吸着フィルム10が設けられている。また、研磨ヘッ
ド5の外周部には、被研磨物3が研磨ヘッド5から飛び
出さないようにリテーナリング7が設けられている。
2. Description of the Related Art FIG. 5 shows a conventional apparatus for polishing a workpiece such as a semiconductor wafer. In FIG. 1, a pad 2 is fixed on a surface plate 1 having a rotating mechanism by a double-sided tape or the like. Above the platen 1, a polishing head 5 for holding a thin plate-like workpiece 3 such as a wafer is provided. The rotating shaft 5a of the polishing head 5 is connected to a rotating / elevating mechanism 6 such as a cylinder. The polishing head 5 is provided with a suction film 10 as a suction holding and buffer material on a surface holding the work 3. In addition, a retainer ring 7 is provided on the outer peripheral portion of the polishing head 5 so that the workpiece 3 does not protrude from the polishing head 5.

【0003】研磨により荒れたパッド2の面を均一化す
るために、回転・昇降機構9に連結されたパッドコンデ
ィショナ4が研磨ヘッド5とは別の位置に設けられてい
る。被研磨物3の研磨と同時、あるいは非研磨時にパッ
ドコンディショナ4を研磨ヘッド5と同様にパッド2上
に加圧し、回転させながらパッドコンディショニングを
行うようになっている。なお、図5において符号8は研
磨剤供給ホース、符号18はスラリー状研磨剤であり、
符号Aは定盤1の回転方向を、符号Bは研磨ヘッド5の
回転方向を、それぞれ示している。
In order to make the surface of the pad 2 roughened by polishing uniform, a pad conditioner 4 connected to a rotating / elevating mechanism 9 is provided at a position different from the polishing head 5. At the same time as the polishing of the object 3 or at the time of non-polishing, the pad conditioner 4 is pressed onto the pad 2 in the same manner as the polishing head 5, and the pad conditioning is performed while rotating. In FIG. 5, reference numeral 8 denotes an abrasive supply hose, and reference numeral 18 denotes a slurry abrasive.
Reference symbol A indicates the rotation direction of the platen 1, and reference symbol B indicates the rotation direction of the polishing head 5.

【0004】[0004]

【発明が解決しようとする課題】上記のような従来の研
磨装置において、研磨ヘッド5およびパッドコンディシ
ョナ4はそれぞれ独立して配置されている。ところが、
この研磨装置では機械精度誤差、組立て精度誤差等のた
め、研磨ヘッド5の軸線とパッド表面のなす角度(直角
度)と、パッドコンディショナ4の軸線とパッド表面の
なす角度(直角度)との間に、僅かであるが誤差が生じ
やすい。
In the above-mentioned conventional polishing apparatus, the polishing head 5 and the pad conditioner 4 are arranged independently of each other. However,
In this polishing apparatus, the angle between the axis of the polishing head 5 and the pad surface (square angle) and the angle between the axis of the pad conditioner 4 and the pad surface (square angle) due to mechanical accuracy errors and assembly accuracy errors. A slight error is likely to occur during the period.

【0005】すなわち、図6の模式図で示すように、パ
ッド2の表面と研磨ヘッド5の軸線のなす角度をθ1と
し、パッド2の表面とパッドコンディショナ4の軸線の
なす角度をθ2とすると、角度θ1とθ2が等しくなら
ならない(θ1≠θ2)。この直角度誤差(角度θ1と
θ2差)は、パッド2表面の円周方向に1/2000程
度あるのが普通である。
That is, as shown in the schematic diagram of FIG. 6, when the angle between the surface of the pad 2 and the axis of the polishing head 5 is θ1, and the angle between the surface of the pad 2 and the axis of the pad conditioner 4 is θ2. , The angles θ1 and θ2 do not become equal (θ1 ≠ θ2). The squareness error (the difference between the angles θ1 and θ2) is generally about 1/2000 in the circumferential direction of the surface of the pad 2.

【0006】図6に示す状態では、研磨時に研磨ヘッド
5をパッド2に接触させて加圧した際、この直角度誤差
が原因して、被研磨物3の加工面がパッド2の表面に不
均一に加圧される。この状態で研磨を行うと、被研磨物
3に対する加圧力に差が生じ、強く加圧されている部分
は研磨量が多くなり、加圧の弱い部分では研磨量が少な
くなる。この結果、被研磨物3の研磨性能(面内均一
性、平坦性)が悪化してしまう。
In the state shown in FIG. 6, when the polishing head 5 is brought into contact with the pad 2 during polishing and pressurized, due to the squareness error, the processed surface of the workpiece 3 does not conform to the surface of the pad 2. Pressurized uniformly. When polishing is performed in this state, a difference occurs in the pressure applied to the object 3 to be polished, and the polishing amount increases in a portion that is strongly pressed, and decreases in a portion that is weakly pressed. As a result, the polishing performance (in-plane uniformity, flatness) of the work 3 is deteriorated.

【0007】また、図6のような状態では、研磨ヘッド
5およびパッドコンディショナ4を高速回転させて研磨
を行うと高精度の研磨性能が得られないため、低速回転
により研磨を行わなければならなくなる。このため、研
磨時間が長くなり、生産性が悪くなるとともに、研磨性
能が悪いため頻繁に研磨条件出しや消耗剤交換等も行わ
なければならず、工数、段取り時間、経費がかかり、歩
留まりも悪いという問題があった。
In the state shown in FIG. 6, if the polishing is performed by rotating the polishing head 5 and the pad conditioner 4 at a high speed, a high-precision polishing performance cannot be obtained. Therefore, the polishing must be performed at a low speed. Disappears. For this reason, the polishing time becomes longer, the productivity becomes worse, and the polishing performance is poor, so that it is necessary to frequently carry out the polishing condition determination and the replacement of the consumables, and the man-hours, setup time, cost are increased, and the yield is poor. There was a problem.

【0008】本発明は、従来技術の上記問題点に鑑みな
されたもので、被研磨物をパッド表面に対し均一に加圧
して最適な状態で加工でき、研磨性能、研磨レートおよ
び生産性の向上が可能な研磨方法および装置を提供する
ことを目的とする。
The present invention has been made in view of the above-mentioned problems of the prior art, and enables an object to be polished to be uniformly pressed against a pad surface and processed in an optimum state, thereby improving polishing performance, polishing rate and productivity. It is an object of the present invention to provide a polishing method and apparatus capable of performing polishing.

【0009】[0009]

【課題を解決するための手段】前記目的を達成するた
め、本発明に係わる研磨方法は、回転する研磨ヘッドで
支持した被研磨物を回転する定盤に設けたパッドの表面
に圧接させて研磨するとともに、回転するパッドコンデ
ィショナをパッド表面に圧接させて該表面を均一化する
研磨方法において、研磨ヘッドのパッド表面に対する角
度を、パッドコンディショナのパッド表面に対する角度
と同一に設定することを特徴とする。前記角度は通常、
直角に設定される。
In order to achieve the above object, a polishing method according to the present invention is directed to a polishing method in which an object to be polished supported by a rotating polishing head is pressed against a surface of a pad provided on a rotating surface plate. In addition, in a polishing method in which a rotating pad conditioner is pressed against a pad surface to make the surface uniform, an angle of the polishing head with respect to the pad surface is set to be equal to an angle of the pad conditioner with respect to the pad surface. And The angle is usually
Set at right angles.

【0010】この研磨方法によれば、被研磨物の加工面
全体がパッド表面に均一に圧接する結果、研磨後の被研
磨物の面内均一性、平坦性等の研磨性能が向上する。ま
た、高速回転条件でのウェーハ研磨が可能となるため研
磨レートが向上するとともに、歩留まりが改善されて生
産性向上が図れる。
According to this polishing method, the entire processing surface of the object to be polished is uniformly pressed against the pad surface, so that the polishing performance such as in-plane uniformity and flatness of the object to be polished after polishing is improved. Further, since the wafer can be polished under the high-speed rotation condition, the polishing rate is improved, and the yield is improved, so that the productivity can be improved.

【0011】また、本発明に係わる研磨装置は、回転す
る研磨ヘッドで支持した被研磨物を回転する定盤に設け
たパッドの表面に圧接させて研磨するとともに、回転す
るパッドコンディショナをパッド表面に圧接させて該表
面を均一化する研磨装置において、研磨ヘッドによる被
研磨物の研磨と、パッドコンディショナによるパッド表
面のコンディショニングとを同軸で行うことを特徴とす
る。ここで、「同軸で行う」とは、研磨ヘッドの回転軸
の軸線と、パッドコンディショナの回転軸の軸線が同一
であることを意味する。研磨とコンディショニングを同
軸で行うため、研磨ヘッドのパッド表面に対する角度
を、パッドコンディショナのパッド表面に対する角度と
同一にして研磨することができる。前記角度は通常、直
角に設定される。
The polishing apparatus according to the present invention is characterized in that an object to be polished supported by a rotating polishing head is brought into pressure contact with a surface of a pad provided on a rotating surface plate for polishing, and a rotating pad conditioner is polished. In the polishing apparatus, the surface is polished by pressing with a polishing head, and the conditioning of the pad surface by the pad conditioner is performed coaxially. Here, "performing coaxially" means that the axis of the rotation axis of the polishing head and the axis of the rotation axis of the pad conditioner are the same. Since the polishing and the conditioning are performed coaxially, the polishing can be performed with the angle of the polishing head to the pad surface being the same as the angle of the pad conditioner to the pad surface. The angle is usually set to a right angle.

【0012】また、本発明に係わる研磨装置は、回転す
る研磨ヘッドで支持した被研磨物を回転する定盤に設け
たパッドの表面に圧接させて研磨するとともに、回転す
るパッドコンディショナをパッド表面に圧接させて該表
面を均一化する研磨装置において、研磨ヘッドおよびパ
ッドコンディショナを、パッド表面に対する角度の調整
が可能な角度調整機構で支持するとともに、前記角度を
角度測定器で測定し、該測定値をもとに角度調整機構を
作動させることにより、研磨ヘッドのパッド表面に対す
る角度を、パッドコンディショナのパッド表面に対する
角度と同一に設定することを特徴とする。本発明では、
研磨ヘッドおよびパッドコンディショナの回転を、前記
したように同軸で行っても良いし、別軸で行う(研磨ヘ
ッドの回転軸の軸線位置と、パッドコンディショナの回
転軸の軸線位置が相違する)こともできる。
Further, the polishing apparatus according to the present invention is characterized in that an object to be polished supported by a rotating polishing head is brought into pressure contact with a surface of a pad provided on a rotating surface plate to polish the object, and a rotating pad conditioner is polished. In a polishing apparatus that makes the surface uniform by pressing against, the polishing head and the pad conditioner are supported by an angle adjustment mechanism capable of adjusting the angle with respect to the pad surface, and the angle is measured by an angle measuring device. By operating the angle adjusting mechanism based on the measured value, the angle of the polishing head with respect to the pad surface is set to be the same as the angle of the pad conditioner with respect to the pad surface. In the present invention,
The rotation of the polishing head and the pad conditioner may be performed coaxially as described above, or may be performed on another axis (the axis position of the rotation axis of the polishing head and the axis position of the rotation axis of the pad conditioner are different). You can also.

【0013】また、本発明に係わる研磨装置は、研磨ヘ
ッドとパッドコンディショナの回転とを、前記したよう
に別軸で行うものである。すなわち、研磨ヘッドの回転
・昇降機構と、パッドコンディショナの回転・昇降機構
とを個別の角度調整機構に回動自在のアームを介して支
持し、前記角度測定器を研磨ヘッドの回転軸とパッドコ
ンディショナの回転軸とに個別に設け、これら角度測定
器を前記回転軸で回転させながらパッド表面に接触させ
ることにより、研磨ヘッドのパッド表面に対する角度
と、パッドコンディショナのパッド表面に対する角度と
を測定し、該測定値をもとに角度調整機構により前記ア
ームを回動させて前記2つの角度を同一に設定すること
を特徴とする。
In the polishing apparatus according to the present invention, the polishing head and the pad conditioner are rotated on separate axes as described above. That is, the rotation / elevation mechanism of the polishing head and the rotation / elevation mechanism of the pad conditioner are supported by separate angle adjustment mechanisms via a rotatable arm, and the angle measuring device is connected to the rotation axis of the polishing head and the pad. The angle of the polishing head with respect to the pad surface and the angle of the pad conditioner with respect to the pad surface are separately provided on the rotation axis of the conditioner and brought into contact with the pad surface while rotating these angle measuring devices about the rotation axis. The arm is rotated by an angle adjusting mechanism based on the measured value, and the two angles are set to be the same.

【0014】[0014]

【発明の実施の形態】以下、本発明の実施の形態を図面
に基づいて説明する。なお、図1ないし図3において、
図5および図6と同一部材または同一機能のものは同一
符号で示している。
Embodiments of the present invention will be described below with reference to the drawings. 1 to 3,
5 and 6 are denoted by the same reference numerals.

【0015】実施の形態1 図1は本発明の研磨装置を備えた研磨システムの全体構
成を示す平面図、図2は図1の研磨装置の縦断側面図で
ある。前記研磨システムは、被研磨物3の研磨を行う研
磨ヘッド5およびパッド2のコンディションニングを行
うパッドコンディショナ4が同軸に設けられた研磨ユニ
ット11(本発明の研磨装置)と、この研磨ユニット1
1での研磨時に使用するスラリーを供給するスラリー供
給ユニット12と、研磨後のウエーハ等の被研磨物を洗
浄・乾燥する洗浄ユニット13と、この洗浄ユニット1
3で使用する洗浄薬液(例えば、HFおよびNH3 の混
合水溶液)を供給する薬液供給ユニット14と、搬送ユ
ニット16とを備えている。この搬送ユニット16は、
カセット15内の被研磨物3を研磨ユニット11、つい
で洗浄ユニット13に搬送した後、所定の処理を施した
後の被研磨物3をカセット15に回収するためのもので
ある。
Embodiment 1 FIG. 1 is a plan view showing the overall configuration of a polishing system provided with a polishing apparatus of the present invention, and FIG. 2 is a vertical sectional side view of the polishing apparatus of FIG. The polishing system includes a polishing unit 11 (a polishing apparatus of the present invention) in which a polishing head 5 for polishing a workpiece 3 and a pad conditioner 4 for conditioning a pad 2 are provided coaxially.
1, a slurry supply unit 12 for supplying a slurry used at the time of polishing, a cleaning unit 13 for cleaning and drying an object to be polished such as a polished wafer, and the cleaning unit 1
3 includes a chemical supply unit 14 that supplies a cleaning chemical (for example, a mixed aqueous solution of HF and NH 3 ) used in 3, and a transport unit 16. This transport unit 16
After the object 3 in the cassette 15 is conveyed to the polishing unit 11 and then to the cleaning unit 13, the object 3 to be subjected to a predetermined process is collected in the cassette 15.

【0016】図2に示すように、研磨ユニット11は、
定盤1上に配置された研磨ヘッド5および、研磨ヘッド
5の外周部に設けられたパッドコンディショナ4を備え
ている。これら研磨ヘッド5と、パッドコンディショナ
4では基準軸が同一である。すなわち、研磨ヘッド5の
回転軸5aと、パッドコンディショナ4の回転軸4aと
は同軸的に配備されており、したがって常時、研磨ヘッ
ド5のパッド2に対する角度(図6のθ1)が、パッド
コンディショナ4のパッド2に対する角度(図6のθ
2)と等しい状態に維持される。
As shown in FIG. 2, the polishing unit 11 comprises:
The polishing apparatus includes a polishing head 5 arranged on the surface plate 1 and a pad conditioner 4 provided on an outer peripheral portion of the polishing head 5. The polishing head 5 and the pad conditioner 4 have the same reference axis. That is, the rotation axis 5a of the polishing head 5 and the rotation axis 4a of the pad conditioner 4 are coaxially provided, and therefore, the angle (θ1 in FIG. 6) of the polishing head 5 with respect to the pad 2 is always set to the pad condition. 6 with respect to the pad 2 (θ in FIG. 6)
It is kept equal to 2).

【0017】また、前記回転軸4aおよび5aは、角度
調整機構19に支持された回転・昇降機構6に連結さ
れ、その回転速度が独立に可変自在となっている。回転
軸4aに取り付けられたパッドコンディショナ4は、下
部が全面的に開口した円筒体であって、研磨ヘッド5お
よびリテーナリング7の外周に嵌合され、かつ、研磨ヘ
ッド5に対し相対的に回転自在となっていている。角度
調整機構19は、前記基準軸のパッド2表面に対する角
度を微調整する役目と、回転・昇降機構6をパッド2表
面の半径方向に移動させることによりパッドコンディシ
ョナ4でパッド2表面全体に均一にパッドコンディショ
ニングする役目とを果たすものである。なお、前記角度
(θ1,θ2)は直角とすることが好ましく、これによ
り研磨性能を特に高めることができる。
The rotating shafts 4a and 5a are connected to a rotating / elevating mechanism 6 supported by an angle adjusting mechanism 19, and their rotation speeds are independently variable. The pad conditioner 4 attached to the rotating shaft 4a is a cylindrical body whose lower part is entirely open, is fitted on the outer periphery of the polishing head 5 and the retainer ring 7, and is relatively to the polishing head 5. It is rotatable. The angle adjustment mechanism 19 serves to finely adjust the angle of the reference axis with respect to the surface of the pad 2, and moves the rotation / elevation mechanism 6 in the radial direction of the surface of the pad 2 to uniformly cover the entire surface of the pad 2 with the pad conditioner 4. And performs the role of pad conditioning. Preferably, the angles (θ1, θ2) are right angles, whereby the polishing performance can be particularly enhanced.

【0018】さらに、図略の回転機構を有する定盤1上
に前記パッド2が両面テープ等で固定されており、この
定盤1の上部に、被研磨物3を保持する前記研磨ヘッド
5が設置されている。研磨ヘッド5には、被研磨物3を
保持する面に吸着保持材および緩衝材としての吸着フイ
ルム10が設けられている。また、被研磨物3が研磨ヘ
ッド5から飛び出さないように、前記リテーナリング7
が設けられている。
Further, the pad 2 is fixed on a surface plate 1 having a rotating mechanism (not shown) with a double-sided tape or the like. On the surface of the surface plate 1, the polishing head 5 for holding the workpiece 3 is provided. is set up. The polishing head 5 is provided with a suction holding material and a suction film 10 as a buffer material on a surface for holding the workpiece 3. Also, the retainer ring 7 is used to prevent the workpiece 3 from jumping out of the polishing head 5.
Is provided.

【0019】次に、上記研磨装置の動作について説明す
る。研磨時には、スラリー状の研磨剤18を研磨剤供給
ホース8によりパッド2上に供給しつつ、定盤1を矢印
A方向に、研磨ヘッド5を矢印B方向にそれぞれ回転さ
せる。研磨ヘッド5を回転させながら回転・昇降機構6
により降下させ、パッド2に加圧接触させて被研磨物3
を研磨する。この際、研磨ヘッド5は回転・昇降機構6
より回転軸5aを介して動力が伝達され、研磨ヘッド5
の回転速度と定盤1の回転速度との回転速度差により被
研磨物3の研磨が行われる。
Next, the operation of the polishing apparatus will be described. During polishing, the platen 1 is rotated in the direction of arrow A and the polishing head 5 is rotated in the direction of arrow B while the slurry 18 in the form of slurry is supplied onto the pad 2 by the slurry supply hose 8. Rotating / elevating mechanism 6 while rotating polishing head 5
To be polished, and brought into contact with the pad 2 under pressure.
Polish. At this time, the polishing head 5 has a rotating / elevating mechanism 6.
Power is further transmitted through the rotating shaft 5a, and the polishing head 5
The object to be polished 3 is polished by the difference between the rotation speed of the platen 1 and the rotation speed of the platen 1.

【0020】一方、パッドコンディショナ4は、回転・
昇降機構6より回転軸4aを介して動力が伝達され、パ
ッド2との接触によりパッド2のコンディショニングを
行う。このコンディショニングは、研磨工程と並行して
行うこともできるし、非研磨時に行うこともできる。い
ずれにしても、研磨とコンディショニングを同軸で同行
うことができるため、高精度の研磨性能が得られる。
On the other hand, the pad conditioner 4 rotates and
Power is transmitted from the lifting mechanism 6 via the rotating shaft 4 a, and the pad 2 is conditioned by contact with the pad 2. This conditioning can be performed in parallel with the polishing step or can be performed during non-polishing. In any case, since polishing and conditioning can be performed coaxially and the same, high-precision polishing performance can be obtained.

【0021】実施の形態2 図3は、本発明の研磨装置の実施の形態2を示してい
る。回転機構(図示せず)を有する定盤1上にパッド2
が両面テープ等により固定され、この定盤1の上部に、
被研磨物3を保持する研磨ヘッド5が設置されている。
この研磨ヘッド5の回転軸5aはシリンダ、モータ等の
回転・昇降機構6に連結されている。
Second Embodiment FIG. 3 shows a polishing apparatus according to a second embodiment of the present invention. Pad 2 on platen 1 having a rotating mechanism (not shown)
Is fixed with double-sided tape, etc.
A polishing head 5 for holding the workpiece 3 is provided.
The rotating shaft 5a of the polishing head 5 is connected to a rotating / elevating mechanism 6 such as a cylinder and a motor.

【0022】研磨ヘッド5には、被研磨物3を保持する
面に吸着フィルム10が設けられている。研磨ヘッド5
の外周部には、被研磨物3が研磨ヘッド5から飛び出さ
ないようにリテーナリング7が設けられている。研磨に
より荒れたパッド2の面を均一化するために、回転・昇
降機構9に連結されたパッドコンディショナ4が研磨ヘ
ッド5とは別の位置に設けられている。被研磨物3の研
磨と同時、あるいは非研磨時にパッドコンディショナ4
を研磨ヘッド5と同様にパッド2上に加圧し、回転させ
ながらパッド2のコンディショニングを行うようになっ
ている。
The polishing head 5 is provided with a suction film 10 on a surface for holding the object 3 to be polished. Polishing head 5
Is provided with a retainer ring 7 so that the object 3 does not protrude from the polishing head 5. In order to make the surface of the pad 2 roughened by polishing uniform, a pad conditioner 4 connected to a rotating / elevating mechanism 9 is provided at a position different from the polishing head 5. At the same time as polishing of the workpiece 3 or at the time of non-polishing, the pad conditioner 4
Is pressed onto the pad 2 in the same manner as the polishing head 5, and the pad 2 is conditioned while being rotated.

【0023】また、この研磨装置では、研磨ヘッド5が
角度調整機構21に支持されている。すなわち、研磨ヘ
ッド5の回転・昇降機構6がアーム20を介して角度調
整機構21に取り付けられ、回転軸5aにはアーム22
を介してパッド2への接触部材(角度測定器)23が設
けられている。この接触部材23は、研磨工程開始前に
研磨ヘッド5と一体で旋回させてパッド2の半径方向の
形状・寸法を測定することにより、研磨ヘッド5のパッ
ド2に対する角度を測定するためのものである。そし
て、この角度測定値をもとに、角度調整機構21により
アーム20を上下に回動させて、回転・昇降機構6、こ
れに取り付けられた回転軸6aおよび研磨ヘッド5につ
いて、一点鎖線で示すように、研磨ヘッド5のパッド2
に対する角度を微調整する。この角度は直角とすること
が好ましく、これにより研磨性能を特に高めることがで
きる。
In this polishing apparatus, the polishing head 5 is supported by an angle adjusting mechanism 21. That is, the rotating / elevating mechanism 6 of the polishing head 5 is attached to the angle adjusting mechanism 21 via the arm 20, and the arm 22 is attached to the rotating shaft 5a.
A contact member (angle measuring device) 23 for contacting the pad 2 via the. The contact member 23 is used to measure the angle of the polishing head 5 with respect to the pad 2 by rotating the polishing member 5 integrally with the polishing head 5 before starting the polishing process and measuring the shape and dimensions of the pad 2 in the radial direction. is there. The arm 20 is rotated up and down by the angle adjusting mechanism 21 based on the angle measurement value, and the rotating / elevating mechanism 6, the rotating shaft 6a attached to the mechanism and the polishing head 5 are indicated by dashed lines. As shown, the pad 2 of the polishing head 5
Fine-tune the angle to. This angle is preferably a right angle, so that the polishing performance can be particularly enhanced.

【0024】また、パッドコンディショナ4が角度調整
機構26に保持されている。すなわち、パッドコンディ
ショナ4の回転・昇降機構9はアーム25を介して角度
調整機構26に取り付けられている。回転軸4aにはア
ーム27を介してパッド2への接触部材(角度測定器)
28が設けられている。この接触部材28は、研磨工程
開始前に研磨ヘッド5と一体で旋回させてパッド2の変
形方向の形状・寸法を測定することにより、パッドコン
ディショナ4のパッド2に対する角度を測定するための
ものである。そして、この角度測定値をもとに、角度調
整機構26によりアーム25を上下に回動させて、回転
・昇降機構9、これに取り付けられた回転軸4aおよび
パッドコンディショナ4について、一点鎖線に示すよう
に、パッドコンディショナ4のパッド2に対する角度を
微調整する。この角度は直角とすることが好ましく、こ
れにより研磨性能を特に高めることができる。
The pad conditioner 4 is held by the angle adjusting mechanism 26. That is, the rotating / elevating mechanism 9 of the pad conditioner 4 is attached to the angle adjusting mechanism 26 via the arm 25. A contact member (angle measuring device) for the rotating shaft 4a with the pad 2 via the arm 27
28 are provided. The contact member 28 is used to measure the angle of the pad conditioner 4 with respect to the pad 2 by measuring the shape and size of the pad 2 in the deformation direction by rotating together with the polishing head 5 before starting the polishing process. It is. Then, based on the angle measurement value, the arm 25 is rotated up and down by the angle adjustment mechanism 26, and the rotation / elevation mechanism 9, the rotation shaft 4a and the pad conditioner 4 attached to the mechanism 25 are indicated by a dashed line. As shown, the angle of the pad conditioner 4 with respect to the pad 2 is finely adjusted. This angle is preferably a right angle, so that the polishing performance can be particularly enhanced.

【0025】上記研磨装置による研磨に際しては、あら
かじめ接触部材23,28および角度調整機構21,2
6により、研磨ヘッド5のパッド2に対する角度と、パ
ッドコンディショナ4のパッド2に対する角度を等しく
(一般的には直角)する。なお、角度調整後は、接触部
材23、28は不要であるので、それぞれ回転軸4a,
6aから取り外しておく。以上のように、パッド2に対
する研磨ヘッド5およびパッドコンディショナー4の角
度を等しくすることにより直角度誤差がなくなり、被研
磨物3の加工面が均一に加圧されるため、被研磨物3の
研磨性能(面内均一性、平坦性)が向上する。
Before polishing by the polishing apparatus, the contact members 23 and 28 and the angle adjusting mechanisms 21 and
6 makes the angle of the polishing head 5 with respect to the pad 2 equal to the angle of the pad conditioner 4 with respect to the pad 2 (generally a right angle). After the angle adjustment, since the contact members 23 and 28 are unnecessary, the rotating shafts 4a and
Remove from 6a. As described above, by making the angles of the polishing head 5 and the pad conditioner 4 with respect to the pad 2 equal, a squareness error is eliminated, and the processed surface of the workpiece 3 is uniformly pressed. Performance (in-plane uniformity, flatness) is improved.

【0026】実験例 実施の形態2の研磨装置(図3)を使用し、下記[表
1]に示す条件でパッドコンディショニングおよびウエ
ーハの研磨を行った。比較のため、図5に示すような従
来の研磨装置を使用して同一条件でウエーハの研磨を行
った。ウエーハ表面の49点を測定し、以下の式で面内
均一性を算出した。研磨が均一であればあるほど、この
面内均一性の値が低くなる。 面内均一性={(MAX点−MIN点)/(MAX点+
MIN点)}×100(%)
Experimental Example Pad conditioning and wafer polishing were performed under the conditions shown in Table 1 below using the polishing apparatus of Embodiment 2 (FIG. 3). For comparison, the wafer was polished under the same conditions using a conventional polishing apparatus as shown in FIG. 49 points on the wafer surface were measured, and the in-plane uniformity was calculated by the following equation. The more uniform the polishing, the lower this in-plane uniformity value. In-plane uniformity = {(MAX point−MIN point) / (MAX point +
(MIN point)} × 100 (%)

【0027】[0027]

【表1】 [Table 1]

【0028】結果を図4に示す。実線が本実施の形態に
よる実験結果、破線が従来の研磨装置による実験結果で
ある。本発明の研磨装置によれば、従来装置と比較し
て、研磨特性の一つである面内均一性が向上しているこ
とが明らかである。また、高速回転領域(研磨ヘッド回
転速度大)では、面内均一性が飛躍的に向上しており、
従来装置の低速回転条件よりも、本発明の研磨装置の高
速回転条件の方が面内均一性が良く、高速回転条件でウ
エーハの研磨が可能であることがわかる。
FIG. 4 shows the results. The solid line is the experimental result according to the present embodiment, and the broken line is the experimental result using the conventional polishing apparatus. It is apparent that the polishing apparatus of the present invention has improved in-plane uniformity, which is one of the polishing characteristics, as compared with the conventional apparatus. In the high-speed rotation area (high polishing head rotation speed), the in-plane uniformity has been dramatically improved.
It can be seen that the high-speed rotation condition of the polishing apparatus of the present invention has better in-plane uniformity and the wafer can be polished under the high-speed rotation condition than the low-speed rotation condition of the conventional apparatus.

【0029】[0029]

【発明の効果】以上、詳述したように、本発明の研磨方
法および装置は、パッドコンディショナのパッドに対す
る角度が、研磨ヘッドのパッドに対する角度と等しくな
るように構成したものである。このため、被研磨物をパ
ッド表面に押し当てたときに、被研磨物の加工面全体が
均一に加圧される結果、被研磨物の面内均一性、平坦性
等の研磨性能が向上する。また、高速回転条件でのウェ
ーハ研磨が可能となるため研磨レートが向上するととも
に、歩留まりが改善されて生産性向上が図れるという効
果がある。
As described above in detail, the polishing method and apparatus of the present invention are configured such that the angle of the pad conditioner with respect to the pad is equal to the angle of the polishing head with respect to the pad. Therefore, when the object to be polished is pressed against the pad surface, the entire processing surface of the object to be polished is uniformly pressed, so that the polishing performance such as in-plane uniformity and flatness of the object to be polished is improved. . Further, since the wafer can be polished under the high-speed rotation condition, the polishing rate is improved, and the yield is improved, so that the productivity can be improved.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の実施の形態1に係わる研磨装置を備え
た研磨システムの全体構成を示す平面図である。
FIG. 1 is a plan view showing an overall configuration of a polishing system provided with a polishing apparatus according to a first embodiment of the present invention.

【図2】図1の研磨装置の縦断側面図である。FIG. 2 is a vertical sectional side view of the polishing apparatus of FIG.

【図3】本発明の実施の形態2に係わる研磨装置の縦断
側面図である。
FIG. 3 is a vertical sectional side view of a polishing apparatus according to Embodiment 2 of the present invention.

【図4】実施の形態2の研磨装置による研磨実験結果
と、従来の研磨装置による研磨実験結果とを比較して示
すグラフである。
FIG. 4 is a graph showing a comparison between a result of a polishing experiment performed by the polishing apparatus of the second embodiment and a result of a polishing experiment performed by a conventional polishing apparatus.

【図5】従来の研磨装置の縦断側面図である。FIG. 5 is a vertical sectional side view of a conventional polishing apparatus.

【図6】従来の研磨装置における研磨ヘッドとパッドコ
ンディショナの直角度誤差を示すし模式図である。
FIG. 6 is a schematic diagram showing a squareness error between a polishing head and a pad conditioner in a conventional polishing apparatus.

【符号の説明】[Explanation of symbols]

1…定盤、2…パッド、3…被研磨物、4…パッドコン
ディショナ、4a…回転軸、5…研磨ヘッド、5a…回
転軸、6…回転・昇降機構、7…リテーナリング、8…
研磨剤供給ホース、9…回転・昇降機構、10…吸着フ
ィルム、11…研磨ユニット、12…スラリー供給ユニ
ット、13…洗浄ユニット、14…薬液供給ユニット、
15…カセット、16…搬送ユニット、18…研磨剤、
19…角度調整機構20,25…アーム、21,26…
角度調整機構。
DESCRIPTION OF SYMBOLS 1 ... Surface plate, 2 ... Pad, 3 ... Workpiece, 4 ... Pad conditioner, 4a ... Rotary shaft, 5 ... Polishing head, 5a ... Rotary shaft, 6 ... Rotating / elevating mechanism, 7 ... Retainer ring, 8 ...
Abrasive supply hose, 9: rotating / elevating mechanism, 10: adsorption film, 11: polishing unit, 12: slurry supply unit, 13: cleaning unit, 14: chemical liquid supply unit,
15: cassette, 16: transport unit, 18: abrasive,
19: Angle adjusting mechanism 20, 25: Arm, 21, 26 ...
Angle adjustment mechanism.

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 回転する研磨ヘッドで支持した被研磨物
を回転する定盤に設けたパッドの表面に圧接させて研磨
するとともに、回転するパッドコンディショナをパッド
表面に圧接させて該表面を均一化する研磨方法におい
て、 研磨ヘッドのパッド表面に対する角度を、パッドコンデ
ィショナのパッド表面に対する角度と同一に設定するこ
とを特徴とする研磨方法。
An object to be polished, which is supported by a rotating polishing head, is pressed against a surface of a pad provided on a rotating surface plate for polishing, and a rotating pad conditioner is pressed against the surface of the pad to make the surface uniform. A polishing method, wherein an angle of a polishing head with respect to a pad surface is set to be the same as an angle of a pad conditioner with respect to a pad surface.
【請求項2】 回転する研磨ヘッドで支持した被研磨物
を回転する定盤に設けたパッドの表面に圧接させて研磨
するとともに、回転するパッドコンディショナをパッド
表面に圧接させて該表面を均一化する研磨装置におい
て、 研磨ヘッドによる被研磨物の研磨と、パッドコンディシ
ョナによるパッド表面のコンディショニングとを同軸で
行うことを特徴とする研磨装置。
2. An object to be polished supported by a rotating polishing head is polished by being pressed against a surface of a pad provided on a rotating surface plate, and a rotating pad conditioner is pressed against the surface of the pad to make the surface uniform. A polishing apparatus, wherein polishing of an object to be polished by a polishing head and conditioning of a pad surface by a pad conditioner are performed coaxially.
【請求項3】 回転する研磨ヘッドで支持した被研磨物
を回転する定盤に設けたパッドの表面に圧接させて研磨
するとともに、回転するパッドコンディショナをパッド
表面に圧接させて該表面を均一化する研磨装置におい
て、 研磨ヘッドおよびパッドコンディショナを、パッド表面
に対する角度の調整が可能な角度調整機構で支持すると
ともに、前記角度を角度測定器で測定し、該測定値をも
とに角度調整機構を作動させることにより、研磨ヘッド
のパッド表面に対する角度を、パッドコンディショナの
パッド表面に対する角度と同一に設定することを特徴と
する研磨装置。
3. An object to be polished supported by a rotating polishing head is polished by being pressed against a surface of a pad provided on a rotating platen, and a rotating pad conditioner is pressed against the surface of the pad to make the surface uniform. In the polishing apparatus, the polishing head and the pad conditioner are supported by an angle adjusting mechanism capable of adjusting the angle with respect to the pad surface, and the angle is measured by an angle measuring instrument, and the angle is adjusted based on the measured value. A polishing apparatus, wherein an angle of a polishing head with respect to a pad surface is set to be equal to an angle of a pad conditioner with respect to a pad surface by operating a mechanism.
【請求項4】 研磨ヘッドの回転・昇降機構と、パッド
コンディショナの回転・昇降機構とを個別の角度調整機
構に回動自在のアームを介して支持し、前記角度測定器
を研磨ヘッドの回転軸とパッドコンディショナの回転軸
とに個別に設け、これら角度測定器を前記回転軸で回転
させながらパッド表面に接触させることにより、研磨ヘ
ッドのパッド表面に対する角度と、パッドコンディショ
ナのパッド表面に対する角度とを測定し、該測定値をも
とに角度調整機構により前記アームを回動させて前記2
つの角度を同一に設定することを特徴とする請求項3に
記載の研磨装置。
4. A polishing head rotating / elevating mechanism and a pad conditioner rotating / elevating mechanism are supported by separate angle adjusting mechanisms via a rotatable arm, and the angle measuring device is rotated by the polishing head. Shaft and the rotation axis of the pad conditioner are separately provided, and by contacting the angle measuring device with the pad surface while rotating the angle measurement device with the rotation axis, the angle of the polishing head with respect to the pad surface and the angle of the pad conditioner with respect to the pad surface are reduced. The arm is rotated by an angle adjusting mechanism based on the measured value, and the angle
The polishing apparatus according to claim 3, wherein the three angles are set to be the same.
JP2001151884A 2001-05-22 2001-05-22 Polishing method and device Pending JP2002346910A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001151884A JP2002346910A (en) 2001-05-22 2001-05-22 Polishing method and device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001151884A JP2002346910A (en) 2001-05-22 2001-05-22 Polishing method and device

Publications (1)

Publication Number Publication Date
JP2002346910A true JP2002346910A (en) 2002-12-04

Family

ID=18996643

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JP2002346910A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012222311A (en) * 2011-04-14 2012-11-12 Disco Abrasive Syst Ltd Polishing method of plate-like object
JP2018140457A (en) * 2017-02-27 2018-09-13 株式会社東京精密 Grinder
KR101951186B1 (en) * 2017-11-07 2019-02-25 한국생산기술연구원 Conditioner of chemical mechanical polishing apparatus for uniform-wearing of polishing pad

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07299738A (en) * 1994-05-11 1995-11-14 Mitsubishi Materials Corp Wafer polishing device
JPH09254020A (en) * 1996-03-19 1997-09-30 Yamaha Corp Polishing device
JP2000288908A (en) * 1999-04-06 2000-10-17 Sony Corp Device and method for polishing
JP2001179602A (en) * 1999-12-27 2001-07-03 Sony Corp Polishing device and polishing method
JP2002270556A (en) * 2001-03-09 2002-09-20 Tokyo Seimitsu Co Ltd Wafer polishing apparatus

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07299738A (en) * 1994-05-11 1995-11-14 Mitsubishi Materials Corp Wafer polishing device
JPH09254020A (en) * 1996-03-19 1997-09-30 Yamaha Corp Polishing device
JP2000288908A (en) * 1999-04-06 2000-10-17 Sony Corp Device and method for polishing
JP2001179602A (en) * 1999-12-27 2001-07-03 Sony Corp Polishing device and polishing method
JP2002270556A (en) * 2001-03-09 2002-09-20 Tokyo Seimitsu Co Ltd Wafer polishing apparatus

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012222311A (en) * 2011-04-14 2012-11-12 Disco Abrasive Syst Ltd Polishing method of plate-like object
JP2018140457A (en) * 2017-02-27 2018-09-13 株式会社東京精密 Grinder
JP2021112820A (en) * 2017-02-27 2021-08-05 株式会社東京精密 Grinding device
JP7079871B2 (en) 2017-02-27 2022-06-02 株式会社東京精密 Grinding device
KR101951186B1 (en) * 2017-11-07 2019-02-25 한국생산기술연구원 Conditioner of chemical mechanical polishing apparatus for uniform-wearing of polishing pad

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