JP2002343979A - Diaphragm type semiconductor device and method of manufacturing the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To solve the problem that, when fabricating a diaphragm by etching a sacrifice layer interposed between anti-etching layers having etching holes, the etching holes cannot be easily sealed. SOLUTION: A first anti-etching layer 8 having a first opening is deposited on the surface of a semiconductor substrate 2, an etching layer is deposited on the first anti-etching layer 8, and then second anti-etching layers 12 and 16 having second openings are deposited on the etching layer. The etching layer is etched from the second opening to form a space 28. In the first opening 18, the surface of the semiconductor substrate 2 is oxidized to form an oxide layer 30 expanded toward the second anti-etching layer. A sealing film 32 is deposited that covers the surface of the second anti-etching layer and is extended into the space from the second opening through the expanded oxide layer 30. A diaphragm type semiconductor device having superior airtightness can be manufactured only by semiconductor processing technologies, and an extremely small absolute pressure detector can be manufactured.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to a semiconductor device having a diaphragm structure formed by applying a semiconductor manufacturing technology to a semiconductor substrate, and a method of manufacturing the same. In particular, the present invention relates to a diaphragm-type semiconductor device having an improved ability to seal a sealed space defined by a diaphragm and a method of manufacturing the same.

[0002]

2. Description of the Related Art A technique for manufacturing a diaphragm type semiconductor device using a silicon processing technique (a fine processing technique, hereinafter referred to as a semiconductor manufacturing technique) for a silicon semiconductor substrate has been developed. No. 25982. In this technique, (1) a first etching resistant layer is laminated on the surface of a silicon substrate. (2) An etching layer is laminated on a predetermined region on the surface of the first etching resistant layer. (3) On the surface of the etching layer, a second etching resistant layer having a large number of minute openings is laminated. (4) The etching layer is etched from the group of openings in the second etching resistant layer. (5) As a result, a space is formed between the first etching resistant layer and the second etching resistant layer. (6) A sealing film is laminated on the surface of the second etching resistant layer to seal a small group of openings in the second etching resistant layer. (7) As described above, a diaphragm is formed by the second etching-resistant layer and the sealing film, and a sealed space is formed inside the diaphragm.

In this case, it is important to select the size of the opening formed in the second etching resistant layer. If it is too large, it cannot be sealed with a sealing film, and if it is too small, the etching layer is removed to remove the space. Cannot be produced.

[0004]

Therefore, the present inventors changed the idea, formed a large opening in the second etching resistant layer, and removed the etching layer in a short time by utilizing the large opening to ensure the removal. Technology to create a space in the city. In this technique, in order to seal a large opening, a sealing film laminated on the surface of the second etching resistant layer is made to penetrate through the opening into the sealed space and extend to the surface of the first etching resistant layer. In this case, the disk-shaped diaphragm
In the etching hole, a diaphragm structure having a donut-shaped deformation region which is practically fixed to be connected by a sealing film extending between the second etching resistant layer and the first etching resistant layer is realized.

In the case of this structure, it is necessary to increase the thickness of the sealing film in order to seal a large opening, and depending on the use application, the thick sealing film is flexible, that is, easily deformed. May be disturbed.

Therefore, the present invention has been developed in order to realize a technique capable of reliably sealing with a thin sealing film.

[0007]

One diaphragm type semiconductor device realized by the present invention bulges toward the diaphragm at a position facing a hole existing in the diaphragm with a sealed space interposed therebetween. An oxide layer is formed. In this case, a structure is particularly preferable in which the surface of the diaphragm opposite to the sealed space is covered with a sealing film, and the sealing film extends from a hole present in the diaphragm to an oxidized layer which expands into the sealed space and swells.

When a semiconductor substrate is oxidized, its volume increases and expands. By using this phenomenon, an oxide layer swelling toward the diaphragm can be formed at a position facing the hole existing in the diaphragm with the sealed space interposed therebetween. When the bulging oxide layer is formed, the hole existing in the diaphragm is sealed by the sealing film entering slightly from the hole existing in the diaphragm. Therefore, the space can be sealed with a thin sealing film, and the pressure in the closed space can be maintained at a constant pressure for a long period of time. or,
There is no need to excessively restrict the unnecessary flexibility of the diaphragm.

In another diaphragm type semiconductor device realized by the present invention, the surface of the diaphragm on the side opposite to the sealed space is covered with a plurality of sealing films, and the surface of the sealing film which directly adheres to the diaphragm is etched. It is characterized by uniformly facing the anti-sealing space side. Here, "facing toward the non-sealed space side" refers to a direction facing away from the sealed space rather than a direction extending along the semiconductor substrate or the diaphragm.

If the etching hole existing in the diaphragm is large and the sealing film is thin, the wall defining the etching hole and the surface of the sealing film approach in parallel at the etching hole portion. That is,
The surface of the sealing film does not face the side opposite to the sealed space but faces the direction extending along the semiconductor substrate or the diaphragm. In this case, even if the second sealing film is laminated thereon, the etching hole is not easily sealed, and the sealing film necessary for sealing becomes too thick.

If the surface of the sealing film which is directly in contact with the diaphragm is etched and uniformly faces the anti-sealing space,
The second sealing film laminated thereon has excellent sealing ability and reliably seals the opening even if it is thin. By adopting this structure, a diaphragm-type semiconductor device having a flexible diaphragm and capable of maintaining the pressure in the sealed space at a constant pressure for a long period of time is realized. Three or more sheets may be laminated to form a sealing film. In this case, it is preferable to stack the layers by repeating the formation and etching of the sealing film. However, the outermost sealing film is not etched.
All the sealing films other than the outermost sealing film may be etched, but not all the sealing films may be etched, and one or more of the sealing films other than the uppermost sealing film may be etched. Then, etching is performed. It is preferable to etch two or more sheets. In this case, by etching repeatedly,
As the surface angle of the sealing film increases, the upper layer becomes closer to the surface of the semiconductor substrate in parallel. As the extension direction of the sealing film approaches the surface of the semiconductor substrate in parallel, the sealing ability by the sealing film is improved. Therefore, the sealing ability can be improved by increasing the number of etchings.

The diaphragm type semiconductor device of the present invention is particularly effectively used when realizing a device in which the sealed space is a vacuum. In this case, a semiconductor device that detects pressure (absolute pressure) with respect to vacuum is realized.

In a structure in which an upper electrode is formed on a diaphragm, a lower electrode is formed at a position facing the upper electrode across a sealed space, and a capacitor is formed between the upper electrode and the lower electrode. A pressure detecting device in which the capacitance of the diaphragm changes according to the pressure acting on the diaphragm.

According to one manufacturing method of the present invention, (1) a first etching resistant layer having a first opening is laminated on a surface of a semiconductor substrate. (2) An etching layer is laminated on a region including the first opening on the surface of the first etching resistant layer. (3) A second opening having a second opening on the surface of the etching layer.
An etching resistant layer is laminated. (4) The etching layer is etched from the second opening to form a space between the first etching resistant layer and the second etching resistant layer. (5) At the first opening, the surface of the semiconductor substrate is oxidized to form an oxide layer swelling toward the second etching resistant layer. (6) While covering the surface of the second etching resistant layer, the second
A sealing film that penetrates into the space from the opening and extends to the bulging oxide layer is laminated.

According to this method, it is possible to manufacture a diaphragm-type semiconductor device that can seal a sealed space with a thin sealing film, has a flexible diaphragm, and can maintain a constant pressure in the sealed space for a long time. it can.

According to another manufacturing method of the present invention, (1) a first etching resistant layer is laminated on a surface of a semiconductor substrate. (2) An etching layer is laminated on a predetermined region on the surface of the first etching resistant layer. (3) A second etching resistant layer having an opening is laminated on the surface of the etching layer. (4) The etching layer is etched from the opening to form a space between the first etching resistant layer and the second etching resistant layer. (5) A first sealing film is laminated on the surface of the second etching resistant layer. (6) The surface of the first sealing film is etched. As a result, the surface of the first sealing film uniformly faces the anti-sealing space side. (7) A second sealing film is laminated on the etched surface of the first sealing layer. According to this method, the opening is reliably sealed even if the second sealing film is thin. A diaphragm-type semiconductor device having a flexible diaphragm and capable of maintaining the pressure in the sealed space at a constant pressure for a long period of time can be manufactured.

In the above method, the first sealing film is formed, the first sealing film is etched, and the second sealing film is laminated, followed by etching of the second sealing film and lamination of the third sealing film. Alternatively, the etching of the third sealing film and the lamination of the fourth sealing film may be repeated, and finally, the outermost surface sealing film may be laminated. There is no particular limitation on the number of stacked sealing films. In this case, it is not always necessary to etch the surface in all the sealing films, and the etching may be omitted in some sealing films and the next sealing film may be laminated. When the number of times of etching is increased, the surface angle of the sealing film becomes closer to the upper surface of the film in parallel with the surface of the semiconductor substrate, and the sealing ability by the sealing film can be improved.

[0018]

DESCRIPTION OF THE PREFERRED EMBODIMENTS First, the main features of the embodiment described below will be summarized. (Embodiment 1) Prior to laminating a first etching resistant layer having a first opening on the surface of a semiconductor substrate, a layer which is an etching resistant layer having no opening and is oxidized is laminated. And
The first etching resistant layer is a layer that is also an oxidation resistant layer. In this case, at the opening of the first etching-resistant layer, the etching-resistant layer laminated before that becomes the etching stop layer, and the first etching-resistant layer is selectively oxidized (LOCOS).
For the mask. (Mode 2) The surface of the first sealing film is etched by a reactive ion etching (RIE) method. In this case, the etching conditions can be easily adjusted, and the surface of the first sealing film after the etching can be easily directed to the anti-sealing space side.

[0019]

FIG. 1 shows an intermediate stage of a manufacturing process of a diaphragm type semiconductor device. In the figure, 2 is a silicon substrate, 4 is a conductor layer doped with impurities at a high concentration (becomes a lower electrode), 6 is a silicon oxide film (will be an etching stop layer), 8 is a silicon nitride film having an opening 18 (etching). It becomes a stop layer and becomes a mask at the time of selective oxidation.
10 is a polysilicon layer (a layer which is removed by etching later and becomes a sacrificial layer), 12 is a silicon nitride film having an opening 20, and 14 is a high impurity impurity having an opening 22. A doped polysilicon layer (to be an upper electrode) 16 is a silicon nitride film having openings 24 and 26, and each layer is formed by repeating a lamination process. Silicon nitride films 12 and 16
Becomes a second anti-etching layer for protecting the front and back of the upper electrode 14. Note that hatching is omitted in the right half of the figure in order to clarify the designation destination of the designation line. Further, the film thickness is shown in a greatly enlarged manner.

FIG. 2 shows a cross section in which the polysilicon layer 10 is removed by etching. In this step, an etching solution or etching gas for etching the polysilicon layer 10 without etching the silicon oxide film 6 and the silicon nitride films 8, 12, and 16 is introduced from the openings 20, 22, and 24 to form the polysilicon layer 10. Etch. As a result, a diaphragm 27 is realized by the silicon nitride films 12, 16 and the upper electrode layer 14, and the diaphragm 27 and the substrate 2
Is formed between them.

FIG. 3 shows a state after thermal oxidation after FIG. Since the silicon oxide film 6 is exposed at the opening 18 of the silicon nitride film 8, it is selectively oxidized (LOCOS oxidation). Since the volume of silicon increases when it is oxidized, a bulging portion 30 bulging toward the diaphragm is formed in the selectively oxidized portion. As a result, the distance G between the lower surface of the diaphragm 27 and the bulging portion 30, which needs to be sealed later, is reduced.

FIG. 4 shows a cross section in which a sealing film 32 is laminated after FIG. The sealing film 32 penetrates into the space 28 through the openings 20, 22, and 24, and adheres to the upper surface of the bulging portion 30.
This step is performed in a vacuum. Because of this, space 28
Are sealed in a vacuum. The sealed vacuum space 28 has a donut shape, the lower side is defined by the silicon substrate 2, and the upper side is defined by the diaphragm 27. The diaphragm 27 has a donut shape.

FIG. 11 is an enlarged view showing a case where the sealing film 132 is formed without forming the bulging portion 30. Sealing film 132
Although the intrusion into the space from the opening of the diaphragm 127, the constriction 136 and the void 134 are easily formed, and the sealing is easily broken. In order to ensure the sealing, the sealing film 132
Must be laminated thickly, and the flexibility of the diaphragm 127 is impaired. FIG. 5 is an enlarged view of the case according to the present embodiment. The thin sealing film 32 can easily and reliably seal the diaphragm 27, and the flexibility of the diaphragm 27 is not impaired. According to the present embodiment, the diaphragm 27 is formed by the bulging portion 30.
Is narrowed, so that the height of the space 28 can be increased.

As is apparent from FIG. 4, the semiconductor device includes a sealed vacuum space 28 inside a diaphragm 27, and the lower electrode 4 and the upper electrode 1 are separated by the vacuum space 28.
4 constitute a condenser facing each other. The capacitance of the capacitor changes depending on the distance between the electrodes. In this case, the distance between the electrodes changes when the diaphragm 27 is deformed. The diaphragm 27 is deformed by the pressure acting on the surface on the side opposite to the sealed space. By utilizing this relationship, a semiconductor device capable of detecting the pressure with respect to vacuum, that is, the absolute pressure, by measuring the capacitance between the lower electrode 4 and the upper electrode 14 can be obtained. Understood. In the figure, reference numeral 26 denotes a contact hole for the upper electrode 14, and the lower electrode 4 is connected to a wiring through a contact hole (not shown).

(Second Embodiment) As shown in FIG. 11, even if the sealing film 132 is laminated without forming a bulge,
4 are easily formed, and it is difficult to reliably seal the opening. For reliable sealing, it is necessary to increase the thickness of the sealing film. Therefore, in the second embodiment, as shown in FIG. 6, a thin first sealing film 232 is first laminated. FIG.
7 shows an enlarged cross section in which thin first sealing films 232 are stacked. In this case, the surface of the first sealing film 232 faces in a direction extending along the diaphragm 227 at the opening (see the arrow: first).
The arrow perpendicular to the surface of the sealing film 232 indicates the diaphragm 227.
Extends along). If the lamination is continued as it is,
One void 134 is formed.

Therefore, in this embodiment, etching is performed from the state shown in FIGS. Here, the surface of the first sealing film 232 is etched by a reactive ion etching (RIE) method. Reference numeral 238 in FIG. 10 indicates the etched surface of the first sealing film 232, and the surface after the etching is uniformly on the upper side (as opposed to the sealed space, as shown by the arrow). (Direction for receiving the second sealing film).

After the processing, the second sealing film 240 is laminated. The second sealing film is laminated on the upward surface 238, and becomes a smoothly continuous film. Since the second sealing film 240 continues smoothly, even if the total thickness of the first sealing film 232 and the second sealing film 240 is small, the sealed space can be reliably sealed. Note that the materials of the first sealing film 232 and the second sealing film 240 can be independently selected. The third and fourth sealing films can be stacked on the second sealing film 240. Each sealing film can be extremely thin. In this case, the first sealing film is formed, the first sealing film is etched and the second sealing film is laminated, the second sealing film is etched and the third sealing film is laminated, and the third sealing film is laminated. The etching and the lamination of the fourth sealing film are repeated, and finally, the outermost surface sealing film is laminated. The number of sealing films may be further divided into a large number. In this case, it is not necessary to etch the surface after laminating all the sealing films, and the etching may be omitted for some sealing films and the next sealing film may be laminated. When the number of times of etching is increased, the surface angle of the sealing film becomes closer to the upper surface of the film in parallel with the surface of the semiconductor substrate, and the sealing ability by the sealing film can be improved.

In the case of the first embodiment, an opening 18 had to be formed in the silicon nitride film 8 for selective oxidation (see FIG. 2). However, this is not necessary in the second embodiment. Therefore, in the second embodiment, the silicon oxide film 6 for protecting the silicon substrate 2 from etching in the opening 18 is not required. As shown in FIGS. 6, 8, and 9, in the case of the second embodiment, the silicon nitride film 8 is formed on the surface of the silicon substrate 2.
Are directly laminated.

In the above embodiment, an example in which a silicon substrate is used has been described, but any material other than silicon may be used as long as it can be processed by a semiconductor manufacturing apparatus. Further, the sacrificial layer, the etching resistant layer, and the oxidation resistant layer are not limited to the materials of the embodiments. For example, in the second embodiment, a silicon oxide film can be used instead of the silicon nitride film. Further, a multilayer film of a silicon oxide film and a silicon nitride film may be used. The present invention is not limited to the embodiments, and various modifications can be made by those skilled in the art without departing from the scope of the claims.

[0030]

According to the first aspect of the present invention, as shown in FIG. 4, the diaphragm type semiconductor device is located at a position facing the holes 20, 22, and 24 existing in the diaphragm 27 with the sealed space 28 interposed therebetween. Since the oxide layer 30 bulging toward 27 is formed, the gap G for sealing with the sealing film 32 is narrowed, the space 28 is reliably sealed, and the pressure in the sealed space 28 is maintained at a constant value for a long time. Can be maintained. As illustrated in FIG. 4, when the sealing film 32 reaches the swelling oxide layer 30, a donut-shaped diaphragm is formed, and the detection sensitivity of the pressure detection element can be easily adjusted.

In the method of manufacturing a diaphragm type semiconductor device according to the present invention, as shown in FIG. 1, the first etching resistant layer 8 having the first opening 18 on the surface of the semiconductor substrate 2.
Are laminated, an etching layer 10 is laminated thereon, and second etching resistant layers 12, 16 having second openings 20, 22, 24 are laminated thereon, and the etching layer 1 is passed through the second opening.
0 is etched to form a space 28, and the surface of the semiconductor substrate is oxidized at the first opening 18 to form an oxide layer 30 swelling toward the second etching resistant layer (FIG. 3). A sealing film covering the surface of the layer and extending into the space from the second opening and extending to the swelling oxide layer;
In order to form No. 2 (FIG. 4), a diaphragm-type semiconductor device having excellent hermeticity can be manufactured only by a semiconductor processing technique, and an extremely small device can be manufactured.

A third aspect of the present invention is a diaphragm type semiconductor device.
As illustrated in FIG. 10, the surface of the diaphragm opposite to the sealed space is covered with a plurality of sealing films 232 and 240, and the surface 238 of the sealing film 232 that is directly in contact with the diaphragm is etched and uniformly uniformly sealed. Since the second sealing film 240 faces the space, the sealing ability of the second sealing film 240 is high, and the thickness of the sealing films 232 and 240 required for the sealing can be reduced.
Flexible diaphragm available.

In the method of manufacturing a diaphragm type semiconductor device according to the ninth aspect, as shown in FIG. 6, a first etching resistant layer 8 is laminated on the surface of the semiconductor substrate 2, and an etching layer is laminated thereon. Second with an opening above the etching layer
The etching resistant layers 12 and 16 are laminated, the etching layer is etched from the opening to form a space, the first sealing film 232 is laminated on the surface of the second etching resistant layer, and the first sealing film 232 is formed. The surface is etched to form an upward facing surface 238 (FIG. 8), and the etched upward facing surface 238 has a second surface.
Since the sealing film 240 is laminated (FIG. 9), a diaphragm-type semiconductor device having excellent sealing performance can be manufactured only by semiconductor processing technology, and an extremely small device can be manufactured.

[Brief description of the drawings]

FIG. 1 shows a cross section of a semiconductor device according to a first embodiment in the course of manufacture.

FIG. 2 shows a cross section of the semiconductor device after the post-process of FIG.

FIG. 3 shows a cross section of the semiconductor device after the post-process of FIG. 2;

FIG. 4 shows a cross section of the semiconductor device after the post-process of FIG.

FIG. 5 shows an enlarged view of FIG. 4;

FIG. 6 shows a cross section of the semiconductor device according to the second embodiment in the process of being manufactured.

FIG. 7 shows an enlarged view of FIG. 6;

8 shows a cross section of the semiconductor device after the post-process of FIG.

9 shows a cross section of the semiconductor device after the post-process of FIG.

FIG. 10 shows an enlarged view of FIG. 9;

FIG. 11 shows a cross section of a conventional semiconductor device.

[Explanation of symbols]

 2. Semiconductor substrate 4. Lower electrode 6. 7. Silicon oxide film Silicon nitride film 10. Sacrificial layer 12. Silicon nitride film 14. Upper electrode 16. Silicon nitride film 18. First opening 20.22.24. Second opening 27. Diaphragm 28. Sealed space 30. Bulging oxide layer 32. Sealing film 232. First sealing film 238. First etched sealing film surface 240. Second sealing film

Continued on the front page (72) Inventor Keiichi Shimaoka 41-cho, Yokomichi, Nagakute-cho, Aichi-gun, Aichi Prefecture Inside of Toyota Central Research Laboratory Co., Ltd. (72) Inventor Seiichiro Ishio 1-1-1, Showa-cho, Kariya-shi, Aichi Prefecture Inside DENSO Corporation (72) Inventor Yasutoshi Suzuki 1-1-1 Showa-cho, Kariya-shi, Aichi F-term in DENSO Corporation (Reference) 2F055 AA40 BB01 CC02 DD05 EE25 FF43 GG01 GG15 4M112 AA01 BA07 CA01 DA02 DA04 EA03 EA04 EA06 EA07 EA10 FA08 FA20

Claims (10)

[Claims] 1. A semiconductor device having a diaphragm structure, wherein an oxide layer bulging toward the diaphragm is formed at a position facing a hole in the diaphragm with a sealed space interposed therebetween. Diaphragm type semiconductor device. 2. The method according to claim 1, wherein a surface of the diaphragm on the side opposite to the sealed space is covered with a sealing film, and the sealing film extends from a hole present in the diaphragm to an oxidized layer which expands into the sealed space and swells. The diaphragm type semiconductor device according to claim 1. 3. A semiconductor device having a diaphragm structure, wherein the surface of the diaphragm on the side opposite to the sealed space is covered with a plurality of sealing films, and the surface of the sealing film which directly adheres to the diaphragm is etched and uniformly removed. A diaphragm-type semiconductor device facing a sealed space side. 4. A semiconductor device having a diaphragm structure, wherein the surface of the diaphragm on the side opposite to the sealed space is covered with a plurality of sealing films, and a sealing film other than the outermost surface sealing film among the plurality of sealing films. A diaphragm type semiconductor device, characterized in that at least one surface of the stop film is etched and uniformly faces the anti-sealing space side. 5. A semiconductor device having a diaphragm structure, wherein the surface of the diaphragm on the side opposite to the sealed space is covered with a plurality of sealing films, and a sealing film other than the outermost surface sealing film among the plurality of sealing films. A diaphragm type characterized in that at least two or more of the surfaces of the stop film are etched so as to uniformly face the anti-sealing space side, and the surface angle of the seal film becomes closer to the surface of the semiconductor substrate more parallel to the upper film. Semiconductor device. 6. The diaphragm type semiconductor device according to claim 1, wherein the sealed space is a vacuum. 7. An upper electrode is formed on the diaphragm, and a lower electrode is formed at a position facing the upper electrode across a sealed space, and a capacitance between the upper electrode and the lower electrode is applied to the diaphragm. 7. The diaphragm type semiconductor device according to claim 1, wherein said diaphragm type semiconductor device changes according to an applied pressure. 8. A first etching resistant layer having a first opening is laminated on a surface of a semiconductor substrate, and an etching layer is laminated on a region including the first opening on a surface of the first etching resistant layer, and the etching is performed. Laminating a second etching resistant layer having a second opening on the surface of the layer, etching the etching layer from the second opening,
Forming a space between the first etch-resistant layer and the second etch-resistant layer, forming an oxide layer at the first opening that oxidizes the surface of the semiconductor substrate and swells toward the second etch-resistant layer; (2) A method for manufacturing a diaphragm-type semiconductor device, comprising: laminating a sealing film that covers the surface of the etching-resistant layer and extends into the space from the second opening and extends to the bulging oxide layer. 9. A first etching resistant layer is laminated on a surface of a semiconductor substrate, an etching layer is laminated on a predetermined region of the surface of the first etching resistant layer, and a first layer having an opening on a surface of the etching layer is provided. 2 Laminate an etching resistant layer, etch the etching layer from the opening,
A space is formed between the etching-resistant layer and the second etching-resistant layer, a first sealing film is laminated on the surface of the second etching-resistant layer, and the surface of the first sealing film is etched. A method for manufacturing a diaphragm-type semiconductor device, comprising: laminating a second sealing film on a surface of a first sealing film. 10. A first etching resistant layer is laminated on a surface of a semiconductor substrate, an etching layer is laminated on a predetermined region of the surface of the first etching resistant layer, and a first layer having an opening on a surface of the etching layer is provided. 2 Laminate an etching resistant layer, etch the etching layer from the opening,
A space is formed between the etching-resistant layer and the second etching-resistant layer, and a plurality of sealing films are sequentially laminated on the surface of the second etching-resistant layer. A method of manufacturing a diaphragm-type semiconductor device, comprising: etching a surface of a laminated sealing film, and further laminating a sealing film on the etched sealing film surface.