JP2002343915A - Semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve the reliability of a semiconductor device. SOLUTION: The semiconductor device has a semiconductor chip 1, a support electrode 5 bonded to one end of the chip 1 through a bonding member 3 and a lead electrode 7 bonded to the other end of the chip 1 supported with the support electrode 5 through a bonding member 3. The support electrode 5 has screw threads on the outer wall and is screwed into a heat sink 13 tightly enough to reduce some strain caused in the semiconductor device, compared with the driving and fixing of the support electrode 5 into the heat sink 13 tightly. Thus, the chip 1 can be set in a hole formed into the heat sink 13 to reduce the distance between the chip 1 being a heat source and the heat sink 13, thereby lowering the thermal resistance to radiate heat enough. This improves the reliability of the semiconductor device.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] The present invention relates to a semiconductor device.

[0002]

2. Description of the Related Art Conventionally, as a method of fixing a semiconductor device to a radiating fin that radiates heat generated in a semiconductor chip of the semiconductor device, a supporting electrode body that supports the semiconductor chip of the semiconductor device is fixed by driving the fin into the radiating fin. There is a way to do that. When the support electrode body is driven into the heat radiation fins and fixed as described above, the semiconductor device is distorted when the support electrode body is driven, and the semiconductor device is adversely affected. For this reason,
In order to prevent the semiconductor device from being adversely affected, for example, as described in Japanese Patent Application Laid-Open No. 5-114678,
There has been proposed one in which a groove is provided on the outer peripheral portion of a soldering surface of a heat sink which is a supporting electrode body. This Japanese Patent Application Laid-Open No. 5-114
The semiconductor device described in Japanese Patent No. 678 discloses a groove provided around the soldering surface of the heat sink, so that the distortion generated when the heat sink is driven into the radiation fin is released.
Prevents adverse effects on semiconductor chips.

[0003]

However, in these semiconductor devices, since a groove is provided between the semiconductor chip, which is a heat generating source, and the radiating fins, the thermal resistance increases, and the heat radiation by the radiating fins increases. May not be performed sufficiently. If the heat dissipation of the semiconductor device is not sufficiently performed, the semiconductor device may be damaged due to thermal fatigue or the like, and improvement in reliability is desired.

An object of the present invention is to improve the reliability of a semiconductor device.

[0005]

The present invention solves the above problems by the following means. That is, a semiconductor chip, a supporting electrode body joined to one side of the semiconductor chip via a joining member, and a lead joined to the other side of the semiconductor chip supported by the supporting electrode body via a joining member. An electrode body, wherein a screw portion is provided on an outer peripheral portion of the support electrode body.

As described above, since the screw portion is provided on the outer peripheral portion of the supporting electrode body supporting the semiconductor chip, the supporting electrode body can be screwed and fixed to a radiator such as a radiating fin or a radiating plate. Distortion generated in the semiconductor device can be reduced as compared with fixing the supporting electrode body by driving it into the radiator. By reducing the distortion generated in the semiconductor device, it is not necessary to form a groove for releasing the distortion around the bonding surface of the supporting electrode body to which the semiconductor chip is bonded. The distance to which heat is transmitted from a certain radiator can be shortened, the thermal resistance can be reduced, and sufficient heat radiation can be performed by the radiator. As a result, heat is less likely to accumulate in the semiconductor device, and a rise in the temperature of the semiconductor device is suppressed, and a change in temperature can be reduced, thereby preventing damage to the semiconductor device due to thermal fatigue and improving the reliability of the semiconductor device. can do.

Also, a semiconductor chip, a columnar supporting electrode body joined to one side of the semiconductor chip via a joining member, and the other side of the semiconductor chip supported by the supporting electrode body. A semiconductor device comprising: a lead electrode body joined via a joining member; and an insulating member sealing the semiconductor chip, wherein a concave portion is formed on one end surface of the columnar support electrode body. A semiconductor device may be formed in which a semiconductor chip is joined to the bottom of the concave portion via a joining member, and a screw portion is provided on the outer peripheral surface of the support electrode body.

As described above, since the screw portion is provided on the outer peripheral surface of the columnar supporting electrode body, the supporting electrode body can be screwed into the radiator to fix the semiconductor device to the radiator. In addition, distortion generated in the supporting electrode body of the semiconductor device can be reduced as compared with driving and fixing the supporting electrode body to the heat radiator. By reducing the distortion generated in the support electrode body, the distortion generated in the semiconductor chip bonded to the support electrode body via the bonding member can be reduced, and thus the semiconductor chip generated when the semiconductor device is fixed to the heat radiator. Therefore, a concave portion is provided on one end surface of the supporting electrode body, and the semiconductor chip can be bonded to the bottom of the concave portion. For this reason, the semiconductor chip as the heat source can be brought closer to the radiator, and the thermal resistance can be reduced. Further, since the semiconductor chip can be inserted into the concave portion and joined to the supporting electrode body, the height of the semiconductor device can be suppressed accordingly.

In addition, a projection is provided on the end surface of the supporting electrode body of the semiconductor device opposite to the end surface to which the semiconductor chip is bonded, and the semiconductor device can be screwed into the heat radiator by gripping the projection. . Further, a concave portion is provided instead of the convex portion,
A semiconductor device can be screwed into the heat radiator by inserting a tool or a jig into the recess.

[0010] The supporting electrode body of the semiconductor device may be formed of zirconium copper. If the radiator into which the semiconductor device is screwed is made of copper, aluminum, etc., if only a pilot hole for inserting the support electrode body is provided in the radiator, the screw part of the support electrode body will The semiconductor device can be fixed to the heat radiator by tightening while processing the screw portion. For this reason, it is not necessary to previously form a screw portion with which the screw portion of the supporting electrode body is screwed to the heat radiator, and the cost for manufacturing the heat radiator can be reduced.

[0011]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to FIGS. FIG. 1 is a longitudinal sectional view of a semiconductor device according to the first embodiment of the present invention. FIG. 2 is a front view of the semiconductor device of FIG.

(First Embodiment) A semiconductor device according to a first embodiment includes a semiconductor chip 1 having a rectifying function and a support electrode body joined to one surface of the semiconductor chip 1 via a joining member 3. 5 and a lead electrode body 7 joined to the other surface of the semiconductor chip 1 supported by the support electrode body 5 via the joining member 3.

The lead electrode body 7 has a joint 8 at one end.
Is formed, and the end surface of the joint 8 is joined to the other surface of the semiconductor chip 1 by the joining member 3 such as solder. Between the semiconductor chip 1 and the supporting electrode body 5,
A mounting plate 9 is provided. The mounting plate 9 is joined to the semiconductor chip 1 by the joining member 3 and also joined to the support electrode body 5 by the joining member 3.

The supporting electrode body 5 is formed in a columnar shape, and has a concave portion having a substantially rectangular longitudinal sectional shape on one end surface.
The mounting plate 9 is joined to the bottom surface of the recess by the joining member 3. The concave portion of the supporting electrode body 5 is filled with an insulating member 11, and the semiconductor chip 1, the mounting plate 9, the bonding portion 8 of the lead electrode body 7 and the bonding member 3 for bonding these are sealed. The semiconductor device in which the semiconductor chip 1 is sealed by the insulating member 11 is screwed into a screw hole formed in the heat sink 13 and fixed.

The mounting plate 9 is joined to the bottom of the concave portion of the support electrode body 5 by the joining member 3 and is joined to one surface of the semiconductor chip 1 by the joining member 3.
The semiconductor chip 1 joined to the lead electrode body 7 is joined to the joining portion 8 of the lead electrode body 7 by the joining member 3, and the lead electrode body 7, the semiconductor chip 1, the mounting plate 9, and the supporting electrode body 5 are electrically connected by the joining member 3. Is joined to.

The semiconductor chip 1 provided on the bottom surface of the concave portion of the supporting electrode body 5 via the mounting plate 9
Are arranged inside the end face of the heat sink 13.

Further, as shown in FIG. 2, a helically formed cross-sectionally uniform projection, that is, a screw thread is provided on the outer peripheral surface of the columnar supporting electrode body 5. A screw portion 15 is formed on the outer peripheral surface of the supporting electrode body 5. Furthermore, a corner formed by one end face of the supporting electrode body 5 where the concave portion is provided and the outer peripheral face is chamfered.

On the other hand, heat of the semiconductor chip 1, which is generated when a current flows through the semiconductor chip 1 of the semiconductor device, is radiated through the supporting electrode body 5 to the heat radiating plate 1 for radiating heat of the semiconductor device.
Reference numeral 3 has a plate thickness substantially the same as the height of the support electrode body 5, and is provided with a through hole penetrating in the plate thickness direction of the heat sink 13.
The inner wall of the through hole is also provided with a spirally formed screw thread having a uniform cross section, and the heat sink 13 has a screw hole. The support electrode body 5 screwed into the screw hole of the heat radiator plate 13 has both end surfaces formed on substantially the same plane as both end surfaces of the heat radiator plate 13.

(Second Embodiment) A second embodiment of a semiconductor device to which the present invention is applied will be described with reference to FIGS. FIG. 3 is a bottom view of the semiconductor device according to the second embodiment. FIG. 4 is a sectional view of the semiconductor device of FIG.
It is -A sectional drawing. In the second embodiment, the same components as those in the first embodiment are denoted by the same reference numerals, and the description thereof will be omitted. The configuration and features different from those in the first embodiment will be described.

The semiconductor device according to the second embodiment is different from the first embodiment in that, as shown in FIGS. 3 and 4, an end surface of the support electrode body 5 facing the end surface in which the concave portion is formed, That is, the point is that the columnar convex portion 17 is formed on the bottom surface. The convex portion 17 formed on the bottom surface of the support electrode body 5 serves as a grip portion when the semiconductor device is screwed into the screw hole of the heat sink 13 to be supported and fixed. For example, an alternator of an automobile, that is, an AC generator, and the like, are provided with a plurality of semiconductor devices having a rectifying action. A person can hold the convex portion 17 by hand or using a jig or a tool and rotate the semiconductor device to remove and replace the semiconductor device.

Third Embodiment A semiconductor device according to a third embodiment of the present invention will be described with reference to FIGS. FIG. 5 is a bottom view of the semiconductor device according to the third embodiment. FIG. 6 is a sectional view of the semiconductor device of FIG.
It is -B sectional drawing. In the third embodiment, the same components as those in the first and second embodiments are denoted by the same reference numerals, description thereof will be omitted, and configurations and features different from those in the first embodiment will be described. .

The semiconductor device according to the third embodiment includes first and second semiconductor devices.
5 and 6 is that the support electrode body 5 has an end face opposed to the end face in which the recess is formed, that is, a recess 19 having a substantially cross-shaped cross section on the bottom surface. It is a point that has been formed. The concave portion 19 formed on the bottom surface of the supporting electrode body 5 is the convex portion 17 of the second embodiment.
Works almost the same. In other words, the worker can use the recess 19
The semiconductor device can be removed and replaced by rotating the semiconductor device by inserting a jig or tool into the device.

As described above, in the semiconductor device of the first to third embodiments, the support electrode body 5 serves as a male screw, and the screw thread of the support electrode body 5 is fitted and fixed in the screw hole of the heat sink 13. Therefore, the force applied to the semiconductor chip 1 can be reduced as compared with the case where the supporting electrode body 5 is pressed into the heat sink 13 and fixed. Further, since the force applied to the insulating member 11 for sealing the semiconductor chip 1 can be reduced, the damage of the semiconductor chip 1 can be suppressed. In other words, the method of inserting the support electrode body 5 of the semiconductor device into the heat sink 13 and fixing the same is different from the method of driving the support electrode body 5 into the heat sink 13 by providing the support electrode body 5 with the threaded portion 15. Has been changed to a method of screwing into the heat radiating plate 13, distortion generated when the support electrode body 5 is driven into the heat radiating plate 13 can be eliminated, and adverse effects on the semiconductor chip 1 can be prevented.

Since the semiconductor chip 1 does not need to protrude from the end face of the heat radiating plate 13 in order to avoid adverse effects due to distortion, the supporting electrode body 5 formed at substantially the same height as the heat radiating plate 13 has a thickness. Because it can be located inside the end face of
The size of the semiconductor device can be reduced, and the height of the supporting electrode body 5 including the semiconductor chip 1 serving as a heat source can be made substantially the same as the height of the heat radiating plate 13, so that the heat resistance can be reduced and the heat radiating effect can be improved. it can.

The shape and size of the convex portion 17 in the semiconductor device of the second embodiment and the shape and size of the concave portion 19 in the semiconductor device of the third embodiment are appropriately selected according to the size of the semiconductor device and the device to be attached. can do.

Conventionally, a semiconductor device for converting an AC output of an AC generator of a car or the like into a DC output is disclosed in, for example,
Japanese Patent Application Laid-Open No. 114678/1999 proposes a semiconductor device in which a copper disk-shaped heat sink having a knurled outer peripheral surface is provided on a radiation fin and a semiconductor pellet is attached to a soldering surface of the heat sink. Have been. In this semiconductor device, the soldering surface is higher than the upper end side of the knurled surface, the outer peripheral wall of the heat sink is higher than the soldering surface, and the soldering surface has a groove on the outer periphery and is convex. .

In such a semiconductor device, since a heat sink is driven into the radiation fins, distortion occurs. A groove for releasing the distortion is provided around the soldering surface. As described above, the conventional semiconductor device has a structure in which the strain generated when the heat sink, which is the supporting electrode body, is driven into the radiation fin is released. Since the semiconductor chip is farther from the radiating fins, heat is likely to be trapped.
Further, it is necessary to provide a wall around the semiconductor chip so that the insulating member serving as the protective layer does not flow. However, since the semiconductor chip is arranged above the upper end side of the knurled surface, the surrounding wall is formed. It must be formed higher by that amount. Therefore, when a wall is formed by extending a part of the heat sink to the lead electrode side, the cost of the heat sink and the like increases.

On the other hand, the present invention provides a semiconductor device in which distortion is hardly generated on the soldering surface and the semiconductor chip 1 and heat dissipation is taken into consideration. That is, the semiconductor device of the present invention fixes the semiconductor device to the heat radiating plate 13 by screwing the screw portion 15 provided on the support electrode body 5 into the screw hole provided on the heat radiating plate 13. Therefore, distortion generated in the semiconductor device can be reduced. This eliminates the need to form a groove for releasing the distortion. Also,
Since distortion generated in the semiconductor device can be reduced, it is not necessary to arrange the semiconductor chip 1 outside the end face of the heat sink 13, and the semiconductor chip 1 is placed inside the end face of the heat sink 13, that is, at both end faces of the heat sink 13. Can be placed in between,
It can be arranged near the heat sink 13. Thus, the semiconductor chip 1 is located closer to the heat sink 13 than the semiconductor chip 1 is arranged outside the end face of the heat sink 13.
Can be disposed, and by eliminating the groove around the soldering surface, the thermal resistance of the supporting electrode body 5 can be reduced, and the heat radiation efficiency can be improved. Furthermore, since the semiconductor chip 1 can be arranged in the screw hole of the heat radiating plate 13, it is not necessary to project the supporting electrode body 5 from the end surface of the heat radiating plate 13 to the lead electrode 7 side. The height of the support electrode body 5 can be made equal to the height of the radiator plate 13 without extending the wall formed by the support electrode body 5 to the lead electrode body 7 side so as not to flow. Thus, the height of the semiconductor device can be suppressed, the size can be reduced, and the cost can be reduced.

The support electrode body 5 is formed in a columnar shape, but is not limited to this, and may be formed in a conical shape. The point is that the radiator insertion portion of the support electrode body 5 only needs to have a shape that can be screwed into the radiator.

The concave portion of the support electrode body 5 to which the semiconductor chip 1 is bonded has a substantially rectangular longitudinal section, but the sectional shape is not limited to a rectangle. The joint with the side surface may be formed round. In short, so that the thermal resistance of the supporting electrode body 5 becomes small,
The shape of the recess 19 may be determined.

The mounting plate 9 is provided to absorb a mechanical stress caused by a difference in thermal expansion coefficient between the semiconductor chip 1 and the supporting electrode body 5. If heat radiation is sufficient, the mounting plate 9 can be eliminated.

(Fourth Embodiment) Next, a semiconductor device according to a fourth embodiment of the present invention will be described with reference to FIG. FIG. 7 is a front view of the semiconductor device according to the fourth embodiment. In the fourth embodiment, the first to first embodiments
The same components as those of the third embodiment are denoted by the same reference numerals, and the description thereof will be omitted. The configuration and features different from those of the first embodiment will be described.

The difference between the semiconductor device of the fourth embodiment and the first embodiment is that, as shown in FIG. 7, a projection 21 is formed on one end surface of a support electrode 5 formed in a columnar shape. The point is that the semiconductor chip 1 is joined to the end face of the projection 21 via the joining member 3. As described above, the protrusions 21 in which the semiconductor chip 1 protrudes from the end surface of the support electrode body 5
Therefore, the insulating member 11 for sealing the semiconductor chip 1 and the joining member 3 must be filled on the end face of the supporting electrode body 5. Therefore, a cylindrical sleeve 23 is provided so that the insulating member 11 does not flow in the radial direction. Further, the heat radiating plate 13 has a cylindrical supporting portion for supporting the support electrode body 5 to be screwed, and a heat radiating portion provided at the end of the cylindrical shape and formed in a disk shape. I have. The height of the supporting portion of the heat radiating plate 13 is substantially the same as the height of the supporting electrode body 5 excluding the convex portion 21, and the outer peripheral surface of the supporting electrode body 5 provided with the screw portion 15 is
3 is in contact with the inner surface of the support portion. The support portion of the heat sink 13 into which the support electrode body 5 is screwed is inserted into a sleeve 23 formed in a cylindrical shape, and the outer surface of the support portion of the heat sink 13 is
It is in contact with the inner surface of the sleeve 23. One end of the sleeve 23 whose inner surface is in contact with the outer surface of the support portion of the heat sink 13 has
The other end of the heat radiating plate 13 is in contact with the end surface of the heat radiating portion, and the other end protrudes toward the lead electrode 7 from the joint 8 of the lead electrode body 7 joined to the semiconductor chip 1 by the joint member 3.

(Fifth Embodiment) Next, a fifth embodiment of the semiconductor device according to the present invention will be described with reference to FIG. FIG. 8 is a front view of the semiconductor device according to the fifth embodiment. In the fifth embodiment, the first to first embodiments
The same components as those of the fourth embodiment are denoted by the same reference numerals, and the description thereof will be omitted. The configuration and the features different from those of the fourth embodiment will be described.

The semiconductor device according to the fifth embodiment is different from the semiconductor device according to the fourth embodiment in that, as shown in FIG. It is a point that was done. That is, the sleeve 23 of the fourth embodiment
Instead, a support portion of the cylindrical heat radiating plate 13 is provided so as to protrude from the joint portion 8 of the lead electrode body 7 toward the lead electrode 7.

(Sixth Embodiment) Next, a sixth embodiment of the semiconductor device according to the present invention will be described with reference to FIGS. FIG. 9 is a front view of the semiconductor device according to the sixth embodiment. FIG. 10 is a sectional view of a conventional semiconductor device. In the sixth embodiment, the same components as those in the first to fifth embodiments are denoted by the same reference numerals, and the description thereof will be omitted. The configuration and features different from those in the first embodiment will be described.

The difference between the semiconductor device of the sixth embodiment and the first embodiment is that, as shown in FIG.
However, the present embodiment is different from the first embodiment in that a support electrode body screwed portion 27 formed in two stages and screwed to the heat sink 13 and a semiconductor chip bonding portion 29 having a bonding surface to which the semiconductor chip 1 is bonded are provided. The semiconductor chip joining portion 29 is formed in a columnar shape,
The outer diameter is a support electrode body screwed portion 27 formed in a columnar shape.
Is formed to be smaller than the outer diameter. The support electrode body 5 of the semiconductor device of the present embodiment has the same configuration as the conventional support electrode body 5 of FIG. 10 except that the screw portion 15 is provided on the outer peripheral surface of the support electrode body screwed portion 27. I have. That is, as shown in FIG. 10, the support electrode body 5 of the present embodiment has the cylindrical side wall 31 formed on the end face side to which the semiconductor chip 1 is joined, and the inner diameter of the side wall 31 is set to the support electrode body 5 side. The diameter is gradually reduced toward the lead electrode body 7 side. Also,
The semiconductor chip 1 is joined to the end face of the projection 21 provided on the end face of the semiconductor chip joining portion 29 of the support electrode body 5. At this time, the outer peripheral surface of the convex portion 21 to which the semiconductor chip 1 is bonded and the inner surface of the side wall 31 for preventing separation of the insulating member 11 are provided at a predetermined interval.

(Seventh Embodiment) Next, a semiconductor device according to a seventh embodiment of the present invention will be described with reference to FIGS. FIG. 11 is a front view of the semiconductor device according to the seventh embodiment. FIG. 12 is a sectional view of a conventional semiconductor device. Note that, in the seventh embodiment, the same components as those in the first to sixth embodiments are denoted by the same reference numerals, description thereof is omitted, and configurations and features different from those in the first embodiment will be described. .

The difference between the semiconductor device of the seventh embodiment and the first embodiment is that, as shown in FIG. 11, the supporting electrode body 5 projects from the end face of the heat sink 13 toward the lead electrode body 7. It is a point provided. Further, the radiator is changed from the radiator plate 13 to a radiator fin 33. The semiconductor device of the present embodiment has a screw portion 15 provided on the outer peripheral surface of the supporting electrode body 5 in the conventional semiconductor device shown in FIG. Therefore, the support electrode body 5 of the semiconductor device of the present embodiment
Has the same configuration as the conventional support electrode body 5 of FIG. 12 except that a screw portion 15 is provided on the outer peripheral surface of the support electrode body 5. That is, the semiconductor device according to the present embodiment has the configuration shown in FIG.
1. As shown in FIG. 12, a copper disk-shaped support electrode body 5 on which a screw portion 15 is formed is provided on a radiation fin 33, and further,
The semiconductor chip 1 is attached to a soldering surface formed on the end surface of the projection 21 of the support electrode body 5. Further, in the semiconductor device of the present embodiment, the soldering surface is higher than the upper end of the screw portion 15, the side wall 31 of the outer peripheral portion of the support electrode body 5 is higher than the soldering surface, and the soldering surface is It has a groove and a projection 21 is formed.

The semiconductor devices of the fourth to seventh embodiments are different from the conventional semiconductor device in which the outer peripheral surface of the support electrode body 5 is subjected to knurling, and the threaded portion 1 is provided on the outer peripheral surface of the support electrode body 5.
5 is a semiconductor device provided. In the conventional semiconductor device, when the supporting electrode body 5 is inserted into the heat radiating plate 13, the semiconductor chip 1
Is provided closer to the lead electrode body 7 than the heat radiating plate 13, but the method of fixing the semiconductor device to the heat radiating plate 13 is changed from the press-fitting type to the screw-in type as in the semiconductor devices of the fourth to seventh embodiments. By doing so, distortion generated in the semiconductor chip 1 can be further reduced. In addition, the semiconductor device is provided with a heat radiating plate 13 with a screw portion 15 provided on the supporting electrode body 5.
The semiconductor device can be easily attached to and detached from the heat radiating plate 13 and the heat radiating fins 33, and the semiconductor device can be removed from the heat radiating plate 13 and the heat radiating fins 33 and replaced when a problem occurs in the semiconductor device. .

The support electrode body 5 of the semiconductor device of the present invention can be formed of zirconium copper called zircon copper or the like. Zirconium copper is used as a high copper alloy, and a radiator such as a radiator plate 13 and a radiator fin 33 is used.
When the supporting electrode body 5 is made of copper, aluminum, or the like, the supporting electrode body 5 is formed of a high copper alloy zirconium copper. A screw groove is formed in the prepared hole while screwing the semiconductor device, and the semiconductor device can be fixed to the heat radiator. That is, the supporting electrode body 5 can function as a tapping screw that forms the screw portion 15 in the prepared hole provided in the heat sink 13.

The thread of the threaded portion 15 formed on the outer peripheral surface of the supporting electrode body 5 of the present invention has a substantially triangular cross section as shown in each figure, but is not limited to this. ,
It can also be formed as a rectangle, trapezoid, semicircle, or the like. In short,
A screw portion 15 is provided on the outer peripheral surface of the supporting electrode body 5, and the structure is such that the semiconductor device advances when the semiconductor device is rotated in one direction and moves backward when the semiconductor device is rotated in the opposite direction. The thread of the screw portion 15 of the semiconductor device is screwed into a screw portion formed on the heat sink 13 or a screw portion is formed by itself in a lower hole of the heat sink 13 to form a screw hole itself. Any shape may be used as long as the semiconductor device can be fixed to the heat sink 13 by being screwed into the screw hole. Further, the shape, size, and number of the thread can be appropriately determined. Further, the heat radiating plate 13 may be of any shape and material that can greatly increase the heat radiating area and improve the heat radiating efficiency.

In a semiconductor rectifier diode such as an automotive alternator, the temperature inside the vehicle is likely to rise due to the downsizing of the vehicle body and the high density of the engine room. In some cases, the heat dissipation efficiency of the semiconductor device is desired to be improved. In addition, semiconductor rectifier diodes such as automotive alternators have, for example, φ1
For example, a support electrode body of φ12.75 is press-fitted into the hole of 2.40. For this reason, distortion or the like may occur in a semiconductor chip or the like, which may adversely affect the semiconductor device. On the other hand, since the semiconductor device of the present invention is fixed to the heat radiating plate by the screw portion, the distortion can be reduced and the falling off due to the vibration can be reduced as compared with the press-fitting.
Further, since the semiconductor chip can be provided inside the hole of the heat sink, the heat resistance can be reduced, and the heat dissipation efficiency can be improved.

Further, the semiconductor device of the present invention is not limited to a semiconductor rectifier diode for converting an AC output of an automotive alternator into a DC output. Can be used for contact with the body.

[0045]

According to the present invention, the reliability of a semiconductor device can be improved.

[Brief description of the drawings]

FIG. 1 is a longitudinal sectional view of a semiconductor device according to a first embodiment of the present invention.

FIG. 2 is a front view of the semiconductor device of FIG. 1;

FIG. 3 is a bottom view of a semiconductor device according to a second embodiment of the present invention.

4 is a sectional view of the semiconductor device of FIG. 3 taken along the line AA.

FIG. 5 is a bottom view of a semiconductor device according to a third embodiment of the present invention.

FIG. 6 is a sectional view taken along line BB of the semiconductor device of FIG. 5;

FIG. 7 is a longitudinal sectional view of a semiconductor device according to a fourth embodiment of the present invention.

FIG. 8 is a front view of a semiconductor device according to a fifth embodiment of the present invention.

FIG. 9 is a front view of a semiconductor device according to a sixth embodiment of the present invention.

FIG. 10 is a longitudinal sectional view of a conventional semiconductor device.

FIG. 11 is a front view of a semiconductor device according to a seventh embodiment of the present invention.

FIG. 12 is a longitudinal sectional view of a conventional semiconductor device.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Semiconductor chip 3 Joining member 5 Support electrode body 7 Lead electrode body 8 Joining part 9 Mounting plate 11 Insulating member 13 Heat sink 15 Screw part

Claims (5)

[Claims] 1. A semiconductor chip, a support electrode body bonded to one side of the semiconductor chip via a bonding member, and a bonding via the bonding member to the other side of the semiconductor chip supported by the support electrode body. A semiconductor device comprising: a lead electrode body to be provided; and a threaded portion provided on an outer peripheral surface of the support electrode body. 2. A semiconductor chip, a support electrode body joined to one side of the semiconductor chip via a joining member, and a joint between the other side of the semiconductor chip supported by the support electrode body and a joining member. The supporting electrode body is formed in a columnar shape, a concave portion is formed on one end surface thereof, and a semiconductor chip is provided at the bottom of the concave portion. Are joined via a joining member, and a screw portion is provided on an outer peripheral surface of the support electrode body. 3. The semiconductor device according to claim 1, wherein a projection is provided on an end surface of the support electrode body opposite to the semiconductor chip. . 4. The semiconductor device according to claim 1, wherein a recess is provided on an end surface of said support electrode body opposite to said semiconductor chip. 5. The semiconductor device according to claim 1, wherein said support electrode body is made of zirconium copper.