JP2950468B2 - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JP2950468B2 JP2950468B2 JP12347296A JP12347296A JP2950468B2 JP 2950468 B2 JP2950468 B2 JP 2950468B2 JP 12347296 A JP12347296 A JP 12347296A JP 12347296 A JP12347296 A JP 12347296A JP 2950468 B2 JP2950468 B2 JP 2950468B2
- Authority
- JP
- Japan
- Prior art keywords
- protective resin
- support electrode
- electrode
- linear expansion
- resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Description
【０００１】[0001]
【発明の属する技術分野】本発明は半導体装置、特に反
復する熱衝撃が加えられる環境下でも電気的特性が劣化
しない半導体装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, and more particularly to a semiconductor device whose electrical characteristics do not deteriorate even in an environment where repeated thermal shocks are applied.
【０００２】[0002]
【従来の技術】例えば、実公平５−１９９５７号公報に
示されるように、金属により形成され且つ凹部を有する
支持電極と、リード電極と、支持電極の凹部の底部とリ
ード電極との間に固着された半導体チップと、凹部内に
充填され且つ半導体チップを被覆する保護樹脂とを備え
た自動車用交流発電機の出力整流ダイオードは公知であ
る。この出力整流ダイオードでは、図２に示すように、
皿状の支持電極２とリード電極３のヘッダ部３ａとの間
にダイオードチップ（半導体チップ）１を固着し、支持
電極２内に充填した保護樹脂４によりダイオードチップ
１及びリード電極３のヘッダ部３ａ側を封止している。
支持電極２は、銅を主成分とする金属にニッケルめっき
を施した金属板から構成され、皿状に形成された凹部２
ａを有し、ダイオードチップ１の放熱板を兼ねる。リー
ド電極３は、ニッケルめっきを施した棒状の銅製リード
部材から構成され、フランジ状に形成されたヘッダ部３
ａと、ヘッダ部３ａから略垂直に延びるリード部３ｂ
と、リード部３ｂ中にＵ字形に形成されたベンド部３ｃ
とを有する。ダイオードチップ１は、支持電極２の凹部
２ａの底部２ｂ及びリード電極３のヘッダ部３ａの各々
に対してそれぞれ半田５、６により固着される。ダイオ
ードチップ１及びリード電極３のヘッダ部３ａ側は、支
持電極２の凹部２ａ内に充填されたシリコーン樹脂から
成る保護樹脂４によって被覆され、水分又はイオン性不
純物等の有害物質がダイオードチップ１の側面１ａに侵
入することを防止する。2. Description of the Related Art As shown in, for example, Japanese Utility Model Publication No. 5-19957, a support electrode formed of metal and having a concave portion, a lead electrode, and a fixed portion between a bottom portion of the concave portion of the support electrode and the lead electrode. An output rectifier diode of an automotive alternator including a semiconductor chip provided and a protective resin filled in the recess and covering the semiconductor chip is known. In this output rectifier diode, as shown in FIG.
A diode chip (semiconductor chip) 1 is fixed between the dish-shaped support electrode 2 and the header 3a of the lead electrode 3, and the header of the diode chip 1 and the lead electrode 3 is protected by the protective resin 4 filled in the support electrode 2. The 3a side is sealed.
The support electrode 2 is made of a metal plate obtained by plating a metal mainly composed of copper with nickel, and is formed in a dish-shaped concave portion 2.
a, and also serves as a heat sink of the diode chip 1. The lead electrode 3 is made of a nickel-plated rod-shaped copper lead member, and has a flange-shaped header portion 3.
a and a lead portion 3b extending substantially perpendicularly from the header portion 3a
And a bend portion 3c formed in a U-shape in the lead portion 3b.
And The diode chip 1 is fixed to the bottom 2b of the recess 2a of the support electrode 2 and the header 3a of the lead electrode 3 by solders 5 and 6, respectively. The header portion 3a side of the diode chip 1 and the lead electrode 3 is covered with a protective resin 4 made of a silicone resin filled in the concave portion 2a of the support electrode 2, and harmful substances such as moisture or ionic impurities are removed from the diode chip 1. It prevents entry into the side surface 1a.
【０００３】[0003]
【発明が解決しようとする課題】ところで、図２に示す
出力整流ダイオードでは、銅製の支持電極２の線膨張係
数が１６.８×１０-6／℃であり、シリコーン樹脂から
成る保護樹脂４の線膨張係数が６.０〜８.０×１０-6／
℃であるから、接着される両者間で線膨張係数が大きく
異なる。このため、ヒートサイクルが反復して加わる厳
しい環境下で使用すると、支持電極２と保護樹脂４との
線膨張係数差により保護樹脂４に過大な熱応力が生じ、
保護樹脂４が支持電極２から剥離することがある。特
に、保護樹脂４を構成するシリコーン樹脂は熱硬化過程
の際に生ずる収縮が極めて大きいので、矢印Ａ及びＢで
示す接着部にストレスが集中し、保護樹脂４がリード電
極３のリード部３ｂの接着面又は支持電極２の凹部２ａ
の接着面から剥離し易い状態になる。したがって、熱衝
撃が多数回反復して加わる厳しい環境下で図２に示す出
力整流ダイオードを使用すると、接着部Ａ及びＢを起点
としてリード電極３のリード部３ｂ及びヘッダ部３ａの
接着面又は支持電極２の凹部２ａの接着面に沿って保護
樹脂４の剥離が進行し、最終的にはダイオードチップ１
の側面１ａにまで保護樹脂４の剥離が到達することがあ
る。このように保護樹脂４の剥離が進行した状態では、
その剥離した界面から水分又はイオン性不純物等の有害
物質がダイオードチップ１の側面１ａに侵入し、これに
よって絶縁不良や逆方向電流が増加して半導体装置の電
気的特性の劣化が生ずる。In the output rectifier diode shown in FIG. 2, the copper support electrode 2 has a linear expansion coefficient of 16.8 × 10 −6 / ° C., and the protective resin 4 made of silicone resin has The coefficient of linear expansion is 6.0 to 8.0 × 10 -6 /
Since the temperature is in ° C., the linear expansion coefficients of the two members are greatly different. Therefore, when used in a severe environment where a heat cycle is repeatedly applied, an excessive thermal stress is generated in the protective resin 4 due to a difference in linear expansion coefficient between the support electrode 2 and the protective resin 4,
The protective resin 4 may peel off from the support electrode 2 in some cases. In particular, since the silicone resin forming the protective resin 4 has an extremely large shrinkage during the thermosetting process, stress concentrates on the bonding portion indicated by arrows A and B, and the protective resin 4 is formed on the lead portion 3b of the lead electrode 3. Adhesive surface or recess 2a of support electrode 2
Is easily peeled off from the adhesive surface. Therefore, when the output rectifier diode shown in FIG. The peeling of the protective resin 4 progresses along the bonding surface of the concave portion 2a of the electrode 2, and finally the diode chip 1
The peeling of the protective resin 4 may reach the side surface 1a. In the state where the peeling of the protective resin 4 has progressed in this manner,
A harmful substance such as moisture or ionic impurities penetrates the side surface 1a of the diode chip 1 from the peeled interface, thereby causing poor insulation and an increase in reverse current, thereby deteriorating the electrical characteristics of the semiconductor device.
【０００４】そこで、本発明は熱衝撃が多数回反復して
加わる厳しい環境下で使用しても電気的特性が劣化しな
い半導体装置を提供することを目的とする。SUMMARY OF THE INVENTION It is an object of the present invention to provide a semiconductor device whose electrical characteristics do not deteriorate even when used in a severe environment where thermal shock is repeatedly applied many times.
【０００５】[0005]
【問題を解決するための手段】本発明による半導体装置
は、銅を主成分とする金属により形成され且つ凹部（２
ａ）を有する支持電極（２）と、リード電極（３）と、
支持電極（２）の凹部（２ａ）の底部（２ｂ）とリード
電極（３）との間に固着された半導体チップ（１）と、
半導体チップ（１）の周囲を包囲する第１の保護樹脂
（７）と、第１の保護樹脂（７）及びリード電極（３）
の下部を包囲する第２の保護樹脂（８）とを備えてい
る。支持電極（２）の底部（２ｂ）には半導体チップ
（１）よりも直径が大きく且つ底部（２ｂ）から突出す
る環状突起（９）と、環状突起（９）の外側で且つ底部
（２ｂ）よりも深い環状溝部（１０）とが形成され、第
２の保護樹脂（８）の線膨張係数は支持電極（２）の線
膨張係数に実質的に等しい。第１の保護樹脂（７）はシ
リコーン樹脂であり、第２の保護樹脂（８）は、線膨張
係数１５.０〜１９.０×１０-6／℃を有するエポキシ樹
脂であり、銅製の支持電極（２）の線膨張係数は１５.
０〜１７.０×１０-6／℃である。環状溝部（１０）は
下方に向かって幅が広がる蟻形断面を有する。SUMMARY OF THE INVENTION A semiconductor device according to the present invention is formed of a metal containing copper as a main component and has a recess (2).
a support electrode (2) having a), a lead electrode (3),
A semiconductor chip (1) fixed between the bottom (2b) of the recess (2a) of the support electrode (2) and the lead electrode (3);
A first protective resin (7) surrounding the periphery of the semiconductor chip (1), a first protective resin (7) and a lead electrode (3)
And a second protective resin (8) surrounding the lower portion of the second protective resin. At the bottom (2b) of the support electrode (2), an annular protrusion (9) having a diameter larger than that of the semiconductor chip (1) and projecting from the bottom (2b), and a bottom (2b) outside the annular protrusion (9). A deeper annular groove (10) is formed, and the coefficient of linear expansion of the second protective resin (8) is substantially equal to the coefficient of linear expansion of the support electrode (2). The first protective resin (7) is a silicone resin, and the second protective resin (8) is an epoxy resin having a linear expansion coefficient of 15.0 to 19.0 × 10 −6 / ° C. The linear expansion coefficient of the electrode (2) is 15.
0 to 17.0 × 10 −6 / ° C. The annular groove (10) has a dovetail cross-section that widens downward.
【０００６】支持電極（２）の底部（２ｂ）に形成され
た環状突起（９）は、半導体チップ（１）よりも直径が
大きく且つ底部（２ｂ）から突出して第１の保護樹脂
（７）の流動を抑制するので、半導体チップ（１）の側
面（１ａ）を第１の保護樹脂（７）により完全に被覆す
ることができ、支持電極（２）の凹部（２ａ）に沿う外
部から半導体チップまでの沿面距離が増加する。第１の
保護樹脂（７）の外側を第２の保護樹脂（８）により被
覆するので、半導体チップ（１）に達する水分又はイオ
ン性不純物等の有害物質の侵入を抑制することができ
る。更に、環状突起（９）の外側で且つ支持電極（２）
の底部（２ｂ）に底部（２ｂ）よりも深い環状溝部（１
０）を形成すると、支持電極（２）の側壁部（２ｃ）と
第２の保護樹脂（８）との接着がより強固となり、支持
電極（２）と第２の保護樹脂（８）との密着性を向上で
きると共に、沿面距離が更に増加する。また、支持電極
（２）と第２の保護樹脂（８）との線膨張係数差を低減
して線膨張係数を均等にするので、ヒートサイクルによ
り熱が反復して加えられても、保護樹脂（８）に過大な
熱応力が生じない。このため、熱衝撃が多数回反復して
加わる厳しい環境下で使用しても保護樹脂（８）の支持
電極（２）からの剥離を抑制することができ、水分又は
イオン性不純物等の有害物質の内部への侵入を抑制し、
半導体装置の電気的特性の劣化を防止できる。The annular projection (9) formed on the bottom (2b) of the support electrode (2) is larger in diameter than the semiconductor chip (1) and protrudes from the bottom (2b) to form a first protective resin (7). Of the semiconductor chip (1), the side surface (1a) of the semiconductor chip (1) can be completely covered with the first protective resin (7), and the semiconductor from the outside along the concave portion (2a) of the support electrode (2). The creepage distance to the chip increases. Since the outside of the first protective resin (7) is covered with the second protective resin (8), intrusion of harmful substances such as moisture or ionic impurities reaching the semiconductor chip (1) can be suppressed. Furthermore, the support electrode (2) outside the annular projection (9)
The annular groove (1) is deeper in the bottom (2b) than the bottom (2b).
0), the adhesion between the side wall portion (2c) of the support electrode (2) and the second protective resin (8) becomes stronger, and the bond between the support electrode (2) and the second protective resin (8) becomes stronger. The adhesion can be improved, and the creepage distance further increases. Further, since the difference in linear expansion coefficient between the support electrode (2) and the second protective resin (8) is reduced and the linear expansion coefficient is made uniform, even if heat is repeatedly applied by a heat cycle, the protective resin is removed. (8) No excessive thermal stress occurs. Therefore, even in a severe environment where thermal shock is repeatedly applied many times, peeling of the protective resin (8) from the support electrode (2) can be suppressed, and harmful substances such as moisture or ionic impurities can be suppressed. Control the intrusion of
Deterioration of electrical characteristics of the semiconductor device can be prevented.
【０００７】[0007]
【発明の実施の形態】以下、自動車用交流発電機の出力
整流ダイオードに適用した本発明による半導体装置の一
実施形態を図１について説明する。図１では図２と実質
的に同一の箇所には同一の符号を付し、その説明を省略
する。本実施形態の出力整流ダイオードは、図１に示す
ように、保護樹脂は、ダイオードチップ１の周囲を包囲
する第１の保護樹脂７と、第１の保護樹脂７及びリード
電極３の下部を包囲する第２の保護樹脂８とを有する。
第１の保護樹脂７は例えばシリコーン樹脂から成り、第
２の保護樹脂８は銅製の支持電極２の線膨張係数１６.
８×１０-6／℃に極めて近い線膨張係数１５.０〜１９.
０×１０-6／℃を有するエポキシ樹脂から成る。従っ
て、第２の保護樹脂８の線膨張係数は支持電極２の線膨
張係数に実質的に等しい。第１の保護樹脂７を構成する
シリコーン樹脂はエポキシ樹脂より密着性に優れ、全体
をエポキシ樹脂により被覆する場合に比べてダイオード
チップ１に達する水分又はイオン性不純物等の有害物質
の侵入を抑制することができる。第２の保護樹脂８を構
成するエポキシ樹脂は、シリコーン樹脂に近い耐熱性を
有しかつシリコーン樹脂よりも硬化収縮が極めて小さ
く、安価である。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of a semiconductor device according to the present invention applied to an output rectifier diode of an automotive alternator will be described below with reference to FIG. In FIG. 1, substantially the same portions as those in FIG. 2 are denoted by the same reference numerals, and description thereof will be omitted. In the output rectifier diode of the present embodiment, as shown in FIG. 1, the protective resin surrounds the first protective resin 7 surrounding the diode chip 1 and the lower part of the first protective resin 7 and the lead electrode 3. And a second protective resin 8.
The first protective resin 7 is made of, for example, a silicone resin, and the second protective resin 8 has a coefficient of linear expansion of the copper support electrode 2 of 16.
Coefficient of linear expansion extremely close to 8 × 10 -6 / ° C.
It consists of an epoxy resin having 0 × 10 −6 / ° C. Therefore, the coefficient of linear expansion of the second protective resin 8 is substantially equal to the coefficient of linear expansion of the support electrode 2. The silicone resin constituting the first protective resin 7 has better adhesion than the epoxy resin, and suppresses intrusion of harmful substances such as moisture or ionic impurities reaching the diode chip 1 as compared with the case where the whole is covered with the epoxy resin. be able to. The epoxy resin that forms the second protective resin 8 has heat resistance close to that of a silicone resin, has a significantly smaller cure shrinkage than a silicone resin, and is inexpensive.
【０００８】また、支持電極２の底部２ｂには、半導体
チップ１よりも直径が大きく且つ底部２ｂから突出する
環状突起９と、環状突起９の外側で且つ底部２ｂよりも
深く下方に向かって幅が広がる蟻形断面を有する環状溝
部１０とが形成される。環状突起９及び環状溝部１０
は、例えば支持電極２の凹部２ａと一体に蟻形断面にプ
レス加工するか又は支持電極２の側壁部２ｃの内周面を
旋盤により切削加工して形成される。プレス加工により
形成する場合には、一度環状の突起及び環状の溝部を第
１のプレス加工により形成した後、第２のプレス加工を
施して、蟻形断面の環状溝部１０に形成することができ
る。The bottom portion 2b of the support electrode 2 has an annular protrusion 9 having a diameter larger than that of the semiconductor chip 1 and protruding from the bottom portion 2b, and a width outside the annular protrusion 9 and deeper and lower than the bottom portion 2b. And an annular groove 10 having a dovetail cross section is formed. Annular projection 9 and annular groove 10
Is formed, for example, by pressing into a dovetail section integrally with the concave portion 2a of the support electrode 2 or by cutting the inner peripheral surface of the side wall 2c of the support electrode 2 with a lathe. In the case of forming by press working, once the annular projection and the annular groove are formed by the first press working, the second press working can be performed to form the annular groove 10 having a dovetail cross section. .
【０００９】本実施形態では、支持電極２の底部２ａに
形成され、半導体チップ１よりも直径が大きく且つ底部
２ｂから突出する環状突起９は、第１の保護樹脂７をダ
イオードチップ１の周囲に塗布するとき、第１の保護樹
脂７の流動を抑制するので、ダイオードチップ１の側面
を第１の保護樹脂７により完全に被覆することができ、
支持電極２の凹部２ａに沿う外部からダイオードチップ
１までの沿面距離が増加する。第１の保護樹脂７の外側
を第２の保護樹脂８により被覆するので、ダイオードチ
ップ１に達する水分又はイオン性不純物等の有害物質の
侵入を抑制することができる。更に、環状突起９の外側
で且つ支持電極２の凹部２ａの底部２ｂに底部２ｂより
も深い蟻形断面の環状溝部１０を形成すると、支持電極
２と第２の保護樹脂８との接着がより強固となり、支持
電極２の凹部２ａと第２の保護樹脂８との密着性を向上
できると共に、沿面距離が更に増加する。In the present embodiment, an annular projection 9 formed on the bottom 2a of the support electrode 2 and having a diameter larger than that of the semiconductor chip 1 and protruding from the bottom 2b allows the first protective resin 7 to surround the diode chip 1. When applying, since the flow of the first protective resin 7 is suppressed, the side surface of the diode chip 1 can be completely covered with the first protective resin 7,
The creeping distance from the outside along the concave portion 2a of the support electrode 2 to the diode chip 1 increases. Since the outside of the first protective resin 7 is covered with the second protective resin 8, it is possible to suppress intrusion of harmful substances such as moisture or ionic impurities reaching the diode chip 1. Further, when an annular groove 10 having a dovetail cross section that is deeper than the bottom 2b is formed outside the annular protrusion 9 and at the bottom 2b of the concave portion 2a of the support electrode 2, the adhesion between the support electrode 2 and the second protective resin 8 is improved. As a result, the adhesion between the concave portion 2a of the support electrode 2 and the second protective resin 8 can be improved, and the creepage distance further increases.
【００１０】また、ダイオードチップ１及びリード電極
３のヘッダ部３ａ側を封止する第２の保護樹脂８として
銅製の支持電極２の線膨張係数１６.８×１０-6／℃に
実質的に等しい線膨張係数１５.０〜１９.０×１０-6／
℃を有するエポキシ樹脂を使用する。このため、支持電
極２と保護樹脂７との線膨張係数差を低減し又は均等と
なり、高温下において保護樹脂７に過大な熱応力が生じ
ない。このため、熱衝撃が多数回反復して加わる厳しい
環境下で使用しても第２の保護樹脂８の支持電極２から
の剥離を抑制することができ、ダイオードチップ１の側
面１ａに至る水分又はイオン性不純物等の有害物質の内
部への侵入を抑制し、絶縁不良や逆方向電流が増加する
等を含む出力整流ダイオードの電気的特性の劣化を防止
することが可能となる。Further, as a second protective resin 8 for sealing the header portion 3a side of the diode chip 1 and the lead electrode 3, the copper support electrode 2 has a linear expansion coefficient of substantially 16.8 × 10 -6 / ° C. Equivalent linear expansion coefficient 15.0-19.0 × 10 -6 /
Use an epoxy resin with a temperature of ° C. For this reason, the difference in linear expansion coefficient between the support electrode 2 and the protective resin 7 is reduced or equalized, and no excessive thermal stress occurs in the protective resin 7 at high temperatures. Therefore, even when used in a severe environment where thermal shock is repeatedly applied many times, the second protective resin 8 can be prevented from peeling off from the support electrode 2, and the moisture or the water reaching the side surface 1 a of the diode chip 1 can be suppressed. It is possible to suppress the intrusion of harmful substances such as ionic impurities into the inside, and to prevent the deterioration of the electrical characteristics of the output rectifier diode, such as poor insulation and an increase in reverse current.
【００１１】本発明は上記の実施形態に限定されず、種
々の変更が可能である。例えば、接着部Ａの下方に配置
されたリード部３ｂの外面又はヘッダ部３ａに環状の溝
部を形成して保護樹脂７とリード部３ｂ又はヘッダ部３
ａとの密着性を増加すると共に、接着部Ａからダイオー
ドチップ１に至る沿面距離を増加してもよい。また、自
動車用交流発電機の出力整流ダイオード以外にトランジ
スタ又はサイリスタ等の他の半導体装置にも本発明を適
用することが可能である。The present invention is not limited to the above embodiment, and various modifications are possible. For example, an annular groove is formed on the outer surface of the lead portion 3b or the header portion 3a disposed below the bonding portion A, and the protective resin 7 and the lead portion 3b or the header portion 3 are formed.
a and the creeping distance from the bonding portion A to the diode chip 1 may be increased. In addition, the present invention can be applied to other semiconductor devices such as a transistor or a thyristor other than the output rectifier diode of the automotive alternator.
【００１２】[0012]
【発明の効果】本発明による半導体装置では、熱衝撃が
多数回反復して加わる厳しい環境下で使用しても、保護
樹脂と電極との剥離がなく、水分やイオン性不純物等の
有害物質の内部への侵入を抑制できるので、特性劣化の
極めて少ない信頼性の高い半導体装置を得ることができ
る。According to the semiconductor device of the present invention, even in a severe environment where thermal shock is repeatedly applied many times, there is no separation between the protective resin and the electrode, and no harmful substances such as moisture and ionic impurities can be removed. Since intrusion into the inside can be suppressed, a highly reliable semiconductor device with extremely little characteristic deterioration can be obtained.
【図１】 自動車用交流発電機の出力整流ダイオードに
適用した本発明による半導体装置の一実施形態を示す断
面図FIG. 1 is a sectional view showing an embodiment of a semiconductor device according to the present invention applied to an output rectifier diode of an automotive alternator.
【図２】 従来の自動車用交流発電機の出力整流ダイオ
ードを示す断面図FIG. 2 is a sectional view showing an output rectifier diode of a conventional automotive alternator.
１．．．ダイオードチップ（半導体チップ）、 １
ａ．．．側面、 ２．．．支持電極、 ２ａ．．．凹
部、 ２ｂ．．．底部、 ２ｃ．．．側壁部、
３．．．リード電極、 ３ａ．．．ヘッダ部、 ３
ｂ．．．リード部、 ５、６．．．半田、 ７．．．第
１の保護樹脂、 ８．．．第２の保護樹脂、 ９．．．
環状突起、 １０．．．環状溝部、1. . . Diode chip (semiconductor chip), 1
a. . . Aspect, 2. . . Support electrode, 2a. . . Recess, 2b. . . Bottom, 2c. . . Side wall,
3. . . Lead electrode, 3a. . . Header part, 3
b. . . Lead part, 5,6. . . 6. solder; . . 7. a first protective resin; . . 8. second protective resin, . .
Annular projections, 10. . . Annular groove,
Claims (3)
つ凹部を有する支持電極と、リード電極と、前記支持電
極の凹部の底部と前記リード電極との間に固着された半
導体チップと、該半導体チップの周囲を包囲する第１の
保護樹脂と、該第１の保護樹脂及び前記リード電極の下
部を包囲する第２の保護樹脂とを備えた半導体装置にお
いて、 前記支持電極の底部には前記半導体チップよりも直径が
大きく且つ該底部から突出する環状突起と、該環状突起
の外側で且つ前記底部よりも深い環状溝部とが形成さ
れ、 前記第２の保護樹脂の線膨張係数は前記支持電極の線膨
張係数に実質的に等しいことを特徴とする半導体装置。A support electrode formed of a metal containing copper as a main component and having a recess; a lead electrode; a semiconductor chip fixed between the bottom of the recess of the support electrode and the lead electrode; In a semiconductor device comprising: a first protective resin surrounding a periphery of a semiconductor chip; and a second protective resin surrounding a lower part of the first protective resin and the lead electrode, An annular protrusion having a diameter larger than that of the semiconductor chip and projecting from the bottom portion; and an annular groove portion outside the annular protrusion and deeper than the bottom portion, wherein the coefficient of linear expansion of the second protective resin is the support electrode. A semiconductor device, wherein the coefficient of linear expansion is substantially equal to:
あり、前記第２の保護樹脂は、線膨張係数１５.０〜１
９.０×１０-6／℃を有するエポキシ樹脂であり、銅製
の前記支持電極の線膨張係数は１５.０〜１７.０×１０
-6／℃である請求項１に記載の半導体装置。2. The method according to claim 1, wherein the first protective resin is a silicone resin, and the second protective resin has a linear expansion coefficient of 15.0 to 1
It is an epoxy resin having 9.0 × 10 −6 / ° C., and the linear expansion coefficient of the copper support electrode is 15.0 to 17.0 × 10 6
2. The semiconductor device according to claim 1, wherein the temperature is −6 / ° C.
る蟻形断面を有する請求項１に記載の半導体装置。3. The semiconductor device according to claim 1, wherein said annular groove has a dovetail cross section whose width increases downward.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12347296A JP2950468B2 (en) | 1996-05-17 | 1996-05-17 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12347296A JP2950468B2 (en) | 1996-05-17 | 1996-05-17 | Semiconductor device |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP36437298A Division JP3171330B2 (en) | 1998-12-22 | 1998-12-22 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH09307042A JPH09307042A (en) | 1997-11-28 |
| JP2950468B2 true JP2950468B2 (en) | 1999-09-20 |
Family
ID=14861478
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12347296A Expired - Fee Related JP2950468B2 (en) | 1996-05-17 | 1996-05-17 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2950468B2 (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3114603U (en) * | 2005-07-11 | 2005-10-27 | パワード有限会社 | Diode element device for solar cell |
| JP5341380B2 (en) * | 2008-04-04 | 2013-11-13 | 株式会社日立製作所 | Semiconductor device |
| JP4921502B2 (en) * | 2009-02-26 | 2012-04-25 | 株式会社日立製作所 | Semiconductor device |
| JP2011222869A (en) * | 2010-04-13 | 2011-11-04 | Kansai Electric Power Co Inc:The | Semiconductor device |
| DE102010021764B4 (en) * | 2010-05-27 | 2014-09-25 | Semikron Elektronik Gmbh & Co. Kg | Method for low-temperature pressure sintering of two connection partners |
| CN107516652A (en) * | 2017-08-18 | 2017-12-26 | 江苏云意电气股份有限公司 | Automobile current generator commutation diode |
| CN110289220A (en) * | 2019-07-07 | 2019-09-27 | 陕西航空电气有限责任公司 | A kind of 250 DEG C of junction temperature of silicon carbide diode chip insulation guard method |
-
1996
- 1996-05-17 JP JP12347296A patent/JP2950468B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH09307042A (en) | 1997-11-28 |
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