JP2002322589A - Plating method and plating device - Google Patents
Plating method and plating deviceInfo
- Publication number
- JP2002322589A JP2002322589A JP2002184011A JP2002184011A JP2002322589A JP 2002322589 A JP2002322589 A JP 2002322589A JP 2002184011 A JP2002184011 A JP 2002184011A JP 2002184011 A JP2002184011 A JP 2002184011A JP 2002322589 A JP2002322589 A JP 2002322589A
- Authority
- JP
- Japan
- Prior art keywords
- plating
- plated
- solution
- center
- flow
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000007747 plating Methods 0.000 title claims abstract description 220
- 238000000034 method Methods 0.000 title claims abstract description 56
- 230000002093 peripheral effect Effects 0.000 claims abstract description 19
- 230000003247 decreasing effect Effects 0.000 claims abstract description 11
- 230000001174 ascending effect Effects 0.000 claims abstract description 7
- 238000003892 spreading Methods 0.000 claims abstract description 4
- 239000007788 liquid Substances 0.000 claims description 34
- 238000007599 discharging Methods 0.000 claims description 5
- 235000012431 wafers Nutrition 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000012856 packing Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
Landscapes
- Electroplating Methods And Accessories (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、いわゆる噴流型の
めっき装置によるめっき方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plating method using a so-called jet type plating apparatus.
【０００２】[0002]
【従来の技術】従来から被めっき物やガラス基板、プリ
ント配線板等の被めっき物に対し、めっき処理を行う方
法として、いわゆる噴流型のめっき手法が知られてい
る。この噴流型のめっき方法とは、めっき槽上部に被め
っき物のめっき対象面を下方にして支持し、そのめっき
対象面に向けてめっき槽底部に設けられた液供給口から
上昇流でめっき液を供給しながらめっき処理するもので
ある。2. Description of the Related Art A so-called jet-type plating technique is conventionally known as a method for performing plating treatment on an object to be plated, such as a glass substrate or a printed wiring board. This jet-type plating method is a method in which a plating target surface of an object to be plated is supported on an upper part of a plating tank with a plating solution facing downward, and a plating solution is supplied upwardly from a liquid supply port provided at the bottom of the plating tank toward the plating target surface. The plating process is carried out while supplying the gas.
【０００３】この噴流型のめっき方法は、被めっき物の
めっき対象面だけにめっき液を接触させることで処理が
行えることから、めっき液に被めっき物を浸漬してめっ
きする処理、いわゆる浸漬型のめっき方法に比べ、小ロ
ットの生産を行う場合やめっき処理工程の自動化に好適
である。そのため、この噴流型のめっき方法は、ウェハ
ーやガラス基板、プリント配線板等の被めっき物をめっ
き処理する際に広く利用されている。[0003] In this jet-type plating method, the treatment can be performed by bringing the plating solution into contact with only the surface to be plated of the object to be plated. It is more suitable for the production of small lots and for the automation of the plating process than the plating method of (1). Therefore, this jet-type plating method is widely used when plating an object to be plated such as a wafer, a glass substrate, and a printed wiring board.
【０００４】ところで、この噴流型のめっき方法では、
めっき液の供給をめっき槽底部中央からめっき対象面に
向けて上昇流で供給、即ち、めっき槽上部に載置した被
めっき物のめっき対象面中央に向けてめっき液を噴流す
ることが多い。このようにめっき対象面中央に向けてめ
っき液を上昇流で供給すると、めっき対象面中央に到達
しためっき液はめっき対象面の周辺方向に広がる流れを
形成する。この噴流型のめっき方法では、このようなめ
っき液流動をさせることにより、めっき対象面全面に均
一なめっき処理を実現しようとするものである。By the way, in this jet type plating method,
In many cases, the plating solution is supplied from the center of the bottom of the plating tank toward the surface to be plated in ascending flow, that is, the plating solution is often jetted toward the center of the surface of the object to be plated placed on the top of the plating tank. When the plating solution is supplied in the upward flow toward the center of the plating target surface, the plating solution reaching the center of the plating target surface forms a flow that spreads in the peripheral direction of the plating target surface. In this jet type plating method, it is intended to realize a uniform plating process over the entire surface to be plated by flowing such a plating solution.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、この噴
流型のめっき方法により、微細な回路やバンプ形成のめ
っき処理、或いは大面積のめっき対象面にめっき処理を
施すと、均一なめっき処理が施せない場合が指摘されて
いる。噴流型のめっき方法においては、めっき対象面中
央から周辺方向へ広がる流れを形成するようにしてめっ
き処理をするため、めっき対象面中央付近と周辺部分で
めっき処理状態に若干の相違を生じる傾向がある。However, when a plating process for forming fine circuits or bumps or a plating process for a large-area plating object is performed by the jet-type plating method, uniform plating cannot be performed. The case has been pointed out. In the jet-type plating method, the plating process is performed so as to form a flow spreading from the center of the plating target surface to the peripheral direction. is there.
【０００６】近年におけるめっき処理は、ウェハーなど
のように非常に微細な回路やバンプ等を形成することが
要求されており、また、製品歩留まりの向上の観点から
大面積のめっき対象面をめっき処理することが多くなっ
ている。そのため、微細な回路やバンプ等の形成のため
のめっき処理、或いは大面積なめっき対象面に対するめ
っき処理であっても、噴流型のめっき方法によってめっ
き対象面全面的に均一となるめっき処理可能な技術の要
求が強い。[0006] In recent years, plating has been required to form very fine circuits and bumps such as wafers. In addition, from the viewpoint of improving product yield, a large-area plating target surface is subjected to plating. To do more. Therefore, even if plating processing for forming a fine circuit or a bump, or plating processing for a large-area plating target surface, the plating process can be performed so that the entire plating target surface is uniform by a jet-type plating method. Strong technical requirements.
【０００７】本発明は、以上のような事情を背景の下に
なされたものであり、噴流型のめっき処理において、微
細な回路やバンプ等をめっき対象面全面で均一に形成す
ることが可能で、大面積のめっき対象面であってもその
中央付近と周辺部分とにおけるめっき処理状態を同じに
し、全面的に均一な処理が可能となるめっき技術を提供
する。The present invention has been made in view of the above circumstances, and it is possible to form fine circuits, bumps, and the like uniformly over the entire surface to be plated in a jet-type plating process. Also, the present invention provides a plating technique that makes the plating process state in the vicinity of the center and in the peripheral portion the same even on a large-area plating target surface, thereby enabling uniform processing over the entire surface.
【０００８】[0008]
【課題を解決するための手段】上記課題を解決するため
に、本発明者は、噴流型のめっき方法について、その液
流動状態を検討したところ、このめっき方法によるとめ
っき処理に不均一が生じる原因はめっき対象面中央に向
けて噴流されためっき液がその中央に到達して周辺方向
に広がる液流動によると推測した。In order to solve the above-mentioned problems, the present inventor examined the liquid flow state of a jet-type plating method. According to this plating method, non-uniform plating occurs. The cause was presumed to be that the plating solution jetted toward the center of the plating target surface reached the center and spread toward the periphery.
【０００９】下方から噴流されためっき液がめっき対象
面の中央に到達して周辺方向に広がる流れは、めっき対
象面の近傍では、中央付近は集中的に速い流動が生じて
おり、めっき対象面に到達しためっき液はその衝突の反
動で、めっき対象面から離れるようになりながら周辺へ
広がるように流動する。そして、めっき対象面の下方位
置に設けられた液流出路へ流れていくことになる。つま
り、めっき対象面中央付近と周辺方向とにおいてめっき
対象面近傍の液流動を比較すると、中央付近は速い流動
で、周辺では中央付近よりも緩やかな（遅い）流動状態
となるのである。即ち、噴流型のめっき方法で、めっき
液を噴流供給する際の流量を固定しておくと、めっき対
象面中央とその周辺部分とにおいて、その流動状態が若
干相違する状態が連続的に維持されることになることか
ら、めっき対象面中央とその周辺とのめっき処理に若干
の相違を生じるのである。その結果、噴流型のめっき方
法では、めっき対象面全面でより均一なめっき処理を実
現することが難しく、微細な回路やバンプ形状を均一に
形成することが難しくなると推測された。The flow of the plating solution jetted from below reaches the center of the plating target surface and spreads in the peripheral direction. In the vicinity of the plating target surface, a rapid flow occurs intensively near the center, and the plating target surface is concentrated. The plating solution that has reached the surface of the plating solution flows away from the surface to be plated and spreads to the periphery due to the reaction of the collision. Then, it flows to a liquid outflow path provided below the plating target surface. That is, comparing the liquid flow near the plating target surface near the center of the plating target surface and the peripheral direction, the flow near the center is faster, and the flow around the plating target is slower (slower) than the vicinity of the center. In other words, when the plating solution is jet-fed and supplied at a fixed flow rate by the jet-type plating method, a state in which the flow state is slightly different between the center of the plating target surface and its peripheral portion is continuously maintained. Therefore, there is a slight difference in the plating process between the center of the plating target surface and the periphery thereof. As a result, it has been presumed that it is difficult to achieve a more uniform plating process over the entire surface to be plated by the jet flow plating method, and it is difficult to uniformly form a fine circuit or bump shape.
【００１０】本発明者は、このような噴流型のめっき方
法における液流動の特殊性を検討した結果、本発明のめ
っき方法を想到した。本発明は、めっき槽上部に載置し
た被めっき物のめっき対象面に、めっき槽底部中央に設
けられた液供給口から上昇流でめっき液を供給するとと
もにめっき槽に設けられた液流出路からめっき液を排出
することで、めっき対象面中央から周辺方向へ広がる流
れを形成するようにしてめっき処理を行うものであるめ
っき方法において、上昇流で供給されるめっき液の流量
を増減させることを特徴とする。The present inventor has studied the peculiarity of liquid flow in such a jet-type plating method, and as a result, has arrived at the plating method of the present invention. The present invention provides a plating solution supplied from a liquid supply port provided in the center of the bottom of a plating tank to a plating target surface of an object to be plated placed on the top of the plating tank, and a plating solution provided in the plating tank. In the plating method, in which the plating process is performed by discharging the plating solution from the center to form a flow spreading from the center of the plating target surface to the peripheral direction, increasing or decreasing the flow rate of the plating solution supplied in the upward flow It is characterized by.
【００１１】めっき対象面中央に向けて、めっき液を上
昇流で供給する際、そのめっき液の流量を増減させる
と、上述しためっき対象面中央とその周辺において生じ
る液流動状態が変更される。つまり、流量を固定にした
場合のめっき対象面近傍の液流動は中央とその周辺とで
若干相違する状態のままとなるが、本発明のめっき方法
のように、めっき液の流量を増減すると、めっき対象面
近傍で生じている液流動状態は固定化されずに変化し、
めっき対象面全面におけるめっき処理の均一性をより向
上させることが可能となる。When the plating solution is supplied toward the center of the plating target surface in an ascending flow, if the flow rate of the plating solution is increased or decreased, the above-mentioned liquid flowing state generated at the center of the plating target surface and its periphery is changed. That is, when the flow rate is fixed, the liquid flow in the vicinity of the plating target surface remains slightly different between the center and the periphery thereof, but when the flow rate of the plating solution is increased or decreased as in the plating method of the present invention, The liquid flow state occurring near the plating target surface changes without being fixed,
It is possible to further improve the uniformity of the plating process over the entire surface to be plated.
【００１２】本発明のめっき方法において上昇流で供給
されるめっき液の流量を増減させる場合、流量の増減は
周期的に連続して行うことが好ましい。流量増減を周期
的に制御することで、めっき対象面近傍のめっき液流動
は周期的に変更されることになり、より均一なメッキ処
理をめっき対象面全面で実現することが容易となる。When increasing or decreasing the flow rate of the plating solution supplied in the upward flow in the plating method of the present invention, it is preferable to increase or decrease the flow rate periodically and continuously. By periodically controlling the flow rate increase / decrease, the flow of the plating solution in the vicinity of the plating target surface is periodically changed, and it becomes easy to realize a more uniform plating process over the entire plating target surface.
【００１３】上記した本発明のめっき方法を実施するに
は、被めっき物のめっき対象面を下方にして被めっき物
を載置する被めっき物支持部を有し、めっき液をめっき
対象面中央に向けて上昇流で供給する液供給口と、載置
した被めっき物のめっき対象面の下方位置からめっき液
を排出する液流出路とを有するめっき槽と、液供給口か
らめっき液を供給するための液供給手段とを、備えるめ
っき装置において、液供給手段は、めっき槽内に供給す
るめっき液流量を制御可能な流量調整手段を備えためっ
き装置を用いることが好ましい。本発明のめっき装置に
おける液供給手段は特に制限ないが、例えば、液供給口
に接続される供給用ポンプ出力を制御したり、液供給口
に繋がる配管に開口率制御可能な可動バルブを取り付
け、バルブの開口度を制御する手法が採用できる。In order to carry out the plating method of the present invention described above, a plating object support portion on which the object to be plated is placed with the surface to be plated facing downward is provided, and the plating solution is applied to the center of the surface to be plated. A plating tank having a liquid supply port for supplying the ascending flow toward the container, a liquid outflow passage for discharging the plating liquid from a position below the surface to be plated of the object to be plated, and a plating liquid supplied from the liquid supply port It is preferable that a plating apparatus having a flow rate adjusting means capable of controlling a flow rate of a plating solution supplied into a plating tank be used as the liquid supply means. The liquid supply means in the plating apparatus of the present invention is not particularly limited, for example, to control the output of a supply pump connected to the liquid supply port, or to attach a movable valve capable of controlling the opening ratio to a pipe connected to the liquid supply port, A method of controlling the opening degree of the valve can be adopted.
【００１４】[0014]
【発明の実施の形態】以下、本発明の好ましい実施形態
を説明する。図１は本実施形態におけるめっき装置のめ
っき槽断面の概略を示したものである。図１で示す本実
施形態のめっき装置１は、カップ状のめっき槽２の上部
開口に沿って被めっき物３を載置するための支持部４が
設けられており、被めっき物３のめっき対象面５を下方
にして被めっき物の周縁がこの支持部４に載置される。
この支持部４には、被めっき物３のめっき対象面５の周
縁に接触する、めっき電流供給用のカソード電極（図示
せず）が配置され、このカソード電極の下に、めっき液
の漏洩防止用のシールパッキン６が配置されている。DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will be described below. FIG. 1 schematically shows a section of a plating tank of a plating apparatus according to the present embodiment. The plating apparatus 1 of the present embodiment shown in FIG. 1 is provided with a support portion 4 for mounting the plating object 3 along the upper opening of the cup-shaped plating tank 2, and the plating of the plating object 3 is performed. The periphery of the object to be plated is placed on the support 4 with the target surface 5 facing downward.
A cathode electrode (not shown) for supplying a plating current, which is in contact with the periphery of the plating target surface 5 of the workpiece 3, is arranged on the support portion 4, and a plating solution is prevented from leaking below the cathode electrode. Seal packing 6 is disposed.
【００１５】めっき槽２には底部中央に液供給口７が設
けられている。そして、めっき対象面下方位置には、載
置された被めっき物３のめっき対象面５中央に向けて上
昇流（矢印）で供給されためっき液をめっき槽２外部に
排出する液流出口８が設けられている。また、めっき槽
２底部には、載置された被めっき物３のめっき対象面５
と対向するようにアノード電極９が設置されている。図
示していないカソード電極及びアノード電極９は、めっ
き電流供給用の電源（図示せぬ）に接続されている。さ
らに、液供給口７に繋がる配管には供給用ポンプ１０が
設置され、ポンプ出力制御器１１によりポンプ出力が制
御できるようにしてある。尚、図示は省略しているが、
支持部４に載置した被めっき物は押し圧手段により、支
持部４に押し圧されることでめっき槽に固定され、めっ
き処理が行われるものである。The plating tank 2 is provided with a liquid supply port 7 at the bottom center. A liquid outlet 8 for discharging the plating solution supplied by the upward flow (arrow) toward the center of the plating target surface 5 of the placed plating target object 3 to the outside of the plating tank 2 is located below the plating target surface. Is provided. In addition, on the bottom of the plating tank 2, the plating target surface 5 of the
An anode electrode 9 is provided so as to be opposed to. The not-shown cathode electrode and anode electrode 9 are connected to a power supply (not shown) for supplying plating current. Further, a supply pump 10 is provided in a pipe connected to the liquid supply port 7 so that a pump output controller 11 can control a pump output. Although illustration is omitted,
The object to be plated placed on the support section 4 is pressed by the support section 4 by a pressing means to be fixed to a plating tank, and a plating process is performed.
【００１６】ここで、図１に示すめっき装置において、
供給されるめっき液の流動状態について説明する。図２
は、液供給口から上昇流で供給しためっき液の定常的な
流れを太線で強調して表している。尚、この液流動状態
を表す太線は、めっき対象面に影響すると思われるもの
を概略的に示しており、めっき槽内全ての液流動状態を
示したものではない。Here, in the plating apparatus shown in FIG.
The flowing state of the supplied plating solution will be described. FIG.
Indicates the steady flow of the plating solution supplied from the solution supply port as an upward flow with a thick line. Note that the bold line representing the liquid flow state schematically shows what seems to have an effect on the plating target surface, and does not indicate the entire liquid flow state in the plating tank.
【００１７】一定の供給量（流量）で供給されるめっき
液はめっき対象面５に到達すると周辺方向に広がるよう
に流動する。その際、めっき対象面５に到達しためっき
液は、図２に示すようにめっき対象面５に到達した際の
衝突する反動で、めっき対象面５から離れながら周辺方
向に広がる流動をして液流出口８へ向かうことになる。
一定の流量でめっき液を供給することは、図２で示すよ
うな液流動状態が連続して維持されることになる。この
とき、めっき対象面近傍では、その中央付近（被めっき
物の幅方向におけるＡ領域）では比較的速いめっき液流
動が生じており、周辺側（被めっき物の幅方向における
Ｂ領域）では中央付近と比べて緩やかな液流動が生じて
いる。When the plating solution supplied at a constant supply amount (flow rate) reaches the plating target surface 5, it flows so as to spread in the peripheral direction. At this time, the plating solution that has reached the plating target surface 5 flows away from the plating target surface 5 and spreads in the peripheral direction due to the collision reaction when reaching the plating target surface 5 as shown in FIG. It will go to the outlet 8.
By supplying the plating solution at a constant flow rate, the liquid flow state as shown in FIG. 2 is continuously maintained. At this time, in the vicinity of the plating target surface, a relatively fast plating solution flow occurs near the center (A region in the width direction of the plating object), and the periphery side (B region in the width direction of the plating object) has a central flow. The liquid flow is gentler than in the vicinity.
【００１８】そこで、図１で示すポンプ出力制御器１１
によりインバータ制御することで、めっき液の供給流量
を増減すると、図２での流動状態がその増減に従って変
化することになる。具体的には、図２でのＡ領域、Ｂ領
域が変動することになり、Ａ領域、Ｂ領域の中における
液流動状態も若干変動することになる。Therefore, the pump output controller 11 shown in FIG.
When the supply flow rate of the plating solution is increased or decreased by the inverter control, the flow state in FIG. 2 changes according to the increase or decrease. Specifically, the A region and the B region in FIG. 2 change, and the liquid flow state in the A region and the B region also slightly changes.
【００１９】続いて、上記した本実施形態のめっき装置
によって、ウェハーの表面にバンプ形成のめっき処理を
行った結果について説明する。被めっき物として、シー
ド金属として銅が被覆されためっき対象面を有するウェ
ハー（直径２００ｍｍ）を用い、そのめっき対象面にφ
５０μｍの円柱状バンプ（高さ３０μｍ）を形成するめ
っき処理を行った。めっき液には、硫酸銅溶液を用い
た。めっき装置は、めっき槽容量３Ｌ、液供給口径２０
ｍｍのものを使用した。Next, a description will be given of a result of performing a plating process for forming a bump on the surface of the wafer by the plating apparatus of the present embodiment. As an object to be plated, a wafer (diameter: 200 mm) having a plating target surface coated with copper as a seed metal was used.
A plating process for forming a 50 μm cylindrical bump (height: 30 μm) was performed. A copper sulfate solution was used as a plating solution. The plating equipment has a plating tank capacity of 3 L and a liquid supply aperture of 20
mm.
【００２０】めっき条件は、予めレジストをめっき対象
面に被覆し、上記バンプ形状のパターンをレジストに形
成した後、流量２０Ｌ／ｍｉｎの定常流の試験（比較
例）と、流量２０Ｌ／ｍｉｎの定常流で所定時間めっき
処理後、１０秒毎に流量２５Ｌ／ｍｉｎ及び１４Ｌ／ｍ
ｉｎにポンプ出力が周期的に増減するように制御を行っ
た試験（実施例）をした。評価は、めっき処理したウェ
ハーのめっき対象面の各領域で、形成されたバンプ高さ
を測定することにより行った。具体的には、図３に示す
ようにめっき処理したウェハー３のめっき対象面５にお
いて、中央部ａ、その中央部ａのやや周辺部ｂ、及び周
縁部ｃの各領域に形成されたバンプ高さを測定した。The plating conditions are as follows. After the resist is coated on the surface to be plated in advance and the bump-shaped pattern is formed on the resist, a steady flow test at a flow rate of 20 L / min (comparative example) and a steady flow at a flow rate of 20 L / min are performed. After plating for a predetermined time, the flow rate is 25 L / min and 14 L / m every 10 seconds.
A test was conducted in which control was performed so that the pump output periodically increased and decreased in the example (Example). The evaluation was performed by measuring the height of the formed bump in each area of the plating target surface of the plated wafer. Specifically, as shown in FIG. 3, on the plating target surface 5 of the plated wafer 3, the bump heights formed in the central part a, the peripheral part b slightly around the central part a, and the peripheral part c are formed. Was measured.
【００２１】その結果、定常流でバンプ形成を行った比
較例の場合、中央部ａにおいては、ほぼ３０μｍ高さの
円柱バンプが形成されており、周辺部ｂでも同様なバン
プが形成されていた。そして、周縁部ｃでは、目標の高
さ（３０μｍ）よりも一割程度高さの低い円柱バンプが
形成されていることが確認された。めっき対象面全面で
見た場合、周縁から２０〜３０ｍｍ付近に形成されるバ
ンプが目標高さ（３０μｍ）より低い高さとなる傾向が
判明した。この比較例のめっき条件では、中央部ａと周
縁部ｃとでめっき液流動の相違があり、その結果、めっ
きの不均一が生じると考えられた。一方、周期的に流量
を増減した実施例では、領域ａ，ｂ，ｃのどの場所にお
いても、目標高さ（３０μｍ）の円柱バンプが形成され
ていることが確認された。As a result, in the case of the comparative example in which the bumps were formed in a steady flow, a columnar bump having a height of approximately 30 μm was formed at the central portion a, and a similar bump was formed at the peripheral portion b. . Then, it was confirmed that a columnar bump having a height about 10% lower than the target height (30 μm) was formed at the peripheral portion c. When viewed over the entire surface to be plated, it was found that the bumps formed around 20 to 30 mm from the peripheral edge tended to be lower than the target height (30 μm). Under the plating conditions of this comparative example, there was a difference in the plating solution flow between the central part a and the peripheral part c, and as a result, it was considered that non-uniform plating occurred. On the other hand, in the example in which the flow rate was periodically increased and decreased, it was confirmed that a columnar bump having a target height (30 μm) was formed in any of the regions a, b, and c.
【００２２】上述した実施例では被めっき物として円状
のウェハーを例に説明しているが、図３の点線で示すよ
うな矩形状の被めっき物、例えば、プリント配線板やガ
ラス基板などをめっき処理する場合、本発明によるめっ
き方法が特に有効なものである。図３のように、例えば
正方形状のめっき対象面に対してめっき処理する場合、
めっき対象面中央に噴流させるめっき方法では、円状の
めっき対象面に比較して、四隅の角部分（Ｘ領域）は更
に液流動が異なるものとなる。そこで、本発明のめっき
方法により、流量を増減させてめっき処理を行うと、こ
のＸ領域の部分も含めて、矩形状のめっき対象面であっ
ても、より均一なめっき処理を全面的に施すことが可能
となる。尚、この矩形状のめっき対象面を有する被めっ
き物を処理する場合には、めっき槽開口形状も矩形のめ
っき装置を採用する。In the above-described embodiment, a circular wafer is described as an example of an object to be plated, but a rectangular object to be plated, such as a printed wiring board or a glass substrate, as shown by a dotted line in FIG. In the case of plating, the plating method according to the present invention is particularly effective. As shown in FIG. 3, for example, when plating a square-shaped plating target surface,
In the plating method in which a jet is jetted to the center of the plating target surface, the liquid flow is further different in the four corners (X region) as compared with the circular plating target surface. Therefore, when the plating process is performed by increasing or decreasing the flow rate by the plating method of the present invention, a more uniform plating process is performed over the entire surface of the rectangular plating target surface including the X region. It becomes possible. When the plating object having the rectangular surface to be plated is treated, a plating apparatus having a rectangular opening shape of the plating tank is employed.
【００２３】[0023]
【発明の効果】以上説明したように、本発明のめっき方
法によれば、微細な回路やバンプ等をめっき対象面全面
において均一に形成することが可能となり、大面積のめ
っき対象面であってもその中央付近と周辺部分とにおけ
るめっき処理状態を同一にすることができ、全面におい
て均一なめっき処理が可能となる。As described above, according to the plating method of the present invention, fine circuits and bumps can be formed uniformly over the entire surface to be plated. Also, the plating process state in the vicinity of the center and the peripheral portion can be made the same, and uniform plating can be performed on the entire surface.
【図１】本実施形態におけるめっき装置の断面概略図。FIG. 1 is a schematic sectional view of a plating apparatus according to an embodiment.
【図２】めっき槽内の液流動状態を示した断面概念図。FIG. 2 is a conceptual sectional view showing a liquid flowing state in a plating tank.
【図３】めっき処理したウェハーのめっき対象面を示す
概略図。FIG. 3 is a schematic view showing a plating target surface of a plated wafer.
１ めっき装置 ２ めっき槽 ３ 被めっき物 ４ 支持部 ５ めっき対象面 ６ シールパッキン ７ 液供給口 ８ 液流出口 ９ アノード電極 １０ 供給用ポンプ １１ ポンプ出力制御器 DESCRIPTION OF SYMBOLS 1 Plating apparatus 2 Plating tank 3 Plated object 4 Support part 5 Plating object surface 6 Seal packing 7 Liquid supply port 8 Liquid outlet 9 Anode electrode 10 Supply pump 11 Pump output controller
Claims (3)
っき対象面に、めっき槽底部中央に設けられた液供給口
から上昇流でめっき液を供給するとともにめっき槽に設
けられた液流出路からめっき液を排出することで、めっ
き対象面中央から周辺方向へ広がる流れを形成するよう
にしてめっき処理を行うものであるめっき方法におい
て、 上昇流で供給されるめっき液の流量を増減させることを
特徴とするめっき方法。1. A plating solution is supplied to a plating target surface of an object to be plated placed on an upper portion of a plating tank from a liquid supply port provided at the center of the bottom of the plating tank in an ascending flow, and a liquid flowing out of the plating tank is supplied. In a plating method in which a plating process is performed by discharging a plating solution from a path to form a flow spreading from the center of a plating target surface to a peripheral direction, a flow rate of a plating solution supplied in an ascending flow is increased or decreased. A plating method characterized in that:
項１に記載のめっき方法。2. The plating method according to claim 1, wherein the flow rate is increased and decreased periodically and continuously.
被めっき物を載置する被めっき物支持部を有し、めっき
液をめっき対象面中央に向けて上昇流で供給する液供給
口と、載置した被めっき物のめっき対象面の下方位置か
らめっき液を排出する液流出路とを有するめっき槽と、 液供給口からめっき液を供給するための液供給手段と、
を備えるめっき装置において、 液供給手段は、めっき槽内に供給するめっき液流量を制
御可能な流量調整手段を備えたことを特徴とするめっき
装置。3. A liquid supply port having a support for mounting an object to be plated on which the object to be plated is placed with the surface to be plated downward, and for supplying a plating solution to the center of the surface to be plated in an upward flow. And a plating tank having a solution outflow passage for discharging a plating solution from a position below a surface to be plated of a mounted object to be plated, a solution supply means for supplying a plating solution from a solution supply port,
The plating apparatus according to claim 1, wherein the solution supply means includes a flow rate adjusting means capable of controlling a flow rate of the plating solution supplied into the plating tank.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002184011A JP3939209B2 (en) | 2002-06-25 | 2002-06-25 | Wafer plating method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002184011A JP3939209B2 (en) | 2002-06-25 | 2002-06-25 | Wafer plating method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002322589A true JP2002322589A (en) | 2002-11-08 |
| JP3939209B2 JP3939209B2 (en) | 2007-07-04 |
Family
ID=19195393
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002184011A Expired - Fee Related JP3939209B2 (en) | 2002-06-25 | 2002-06-25 | Wafer plating method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3939209B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004033763A1 (en) * | 2002-10-11 | 2004-04-22 | Electroplating Engineers Of Japan Limited | Cup type plating equipment |
-
2002
- 2002-06-25 JP JP2002184011A patent/JP3939209B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004033763A1 (en) * | 2002-10-11 | 2004-04-22 | Electroplating Engineers Of Japan Limited | Cup type plating equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3939209B2 (en) | 2007-07-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR102533812B1 (en) | Control of electrolyte flow dynamics for uniform electroplating | |
| US6482300B2 (en) | Cup shaped plating apparatus with a disc shaped stirring device having an opening in the center thereof | |
| US6210554B1 (en) | Method of plating semiconductor wafer and plated semiconductor wafer | |
| US6881309B2 (en) | Diffuser with spiral opening pattern for electroplating reactor vessel | |
| US9899230B2 (en) | Apparatus for advanced packaging applications | |
| KR100707121B1 (en) | An apparatus for electrochemically processing a microelectronic workpiece and a method for electroplating a material on a microelectronic workpiece | |
| KR100297120B1 (en) | Bump Formation Method and Plating Apparatus | |
| JP2734269B2 (en) | Semiconductor manufacturing equipment | |
| WO2004009879A1 (en) | Plating device | |
| KR20050114226A (en) | Plating apparatus | |
| CA2976887C (en) | Fluid discharge device, fluid discharge method, and fluid application device | |
| KR102563118B1 (en) | Convection Optimization for Mixed Feature Electroplating | |
| JP2001064795A (en) | Cup-shaped plating device | |
| JP2002322589A (en) | Plating method and plating device | |
| JP2624200B2 (en) | Jet type electroplating apparatus and plating method | |
| JPH03202488A (en) | Plating device | |
| JP4237110B2 (en) | Method and apparatus for cleaning plated substrate | |
| JPH10214838A (en) | Semiconductor manufacturing device and method for manufacturing semiconductor device | |
| JP2513357B2 (en) | Lead solder plating equipment | |
| KR20040055166A (en) | apparatus for supplying slurry | |
| JPH05267304A (en) | Apparatus and method for plating | |
| KR20110052346A (en) | Apparatus for processing a substrate | |
| JPH01289143A (en) | Bump plating method | |
| JPH02205697A (en) | Bump plating device | |
| JPH04183896A (en) | Plating device and plating method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20050518 |
|
| RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20050518 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20061002 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20061016 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20061122 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20061213 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070206 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20070301 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20070327 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 3939209 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130406 Year of fee payment: 6 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20160406 Year of fee payment: 9 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |