JP2002322557A - METHOD FOR DEPOSITING Al ALLOY THIN FILM, AND SPUTTERING TARGET FOR DEPOSITING Al ALLOY THIN FILM - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for depositing an Al alloy thin film which has specific resistance of <=10 μΩcm, further has excellent heat resistance or the like, and is suitably usable as wiring, an electrode or the like for a liquid crystal display panel, and to provide a sputtering target for depositing the Al alloy thin film. SOLUTION: (1) In the method for depositing an Al alloy thin film, an Al alloy thin film in which one or more kinds selected from the transition elements in the group IVa, Va, VIa and VIIa and one or more kinds selected from Si and Ge are allowed to form a solid solution in Al is deposited on a substrate, and after that, a part or the whole of the solid solution elements in the Al alloy thin film is precipitated as an intermetallic compound by heat treatment at a heating temperature of 100 to 600 deg.C, so that the Al alloy thin film having an electric resistance value of <=10 μΩcm is obtained. (2) The sputtering target made of an Al alloy is used for depositing an Al alloy thin film onto a substrate in the same production method for the Al alloy thin film.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing an Al alloy thin film and a sputtering target for forming the Al alloy thin film, and more particularly to a thin film wiring for a gate bus line or a source bus line of a liquid crystal display panel, and a switching element of the panel. The present invention relates to a method for manufacturing an aluminum alloy thin film (Al alloy thin film) suitable as a wiring or an electrode of a part.

[0002]

[Prior Art] Liquid crystal display panel: Liquid Cristal Displ
The ay (hereinafter referred to as LCD) is thinner, lighter and consumes less power than conventional cathode ray tubes, and is more likely to produce high-resolution images. It is getting. Recently, such LCDs have
In order to further enhance image quality, thin-film transistors, which are semiconductor devices, are used as LCD switching elements: Thin Fil
m L with structure incorporating Transister (hereinafter referred to as TFT)
CDs have been proposed and are widely used.

[0003] The wiring material of the above-mentioned TFT-mounted LCD (hereinafter referred to as TFT-LCD) is exposed to relatively high temperatures during the TFT manufacturing process.
(Approximately 300 to 400 ° C), which is widely used as an electrode and wiring material for integrated circuits in general semiconductor devices.
When Al or an Al-based alloy is used for LCD wiring, since they have insufficient heat resistance, minute irregularities on the wiring surface called hillocks (hemispherical wiring bulges) and voids are generated. Accordingly, high melting point metals such as Ta, Mo, Cr, and Ti are frequently used as LCD wiring materials. However, in recent years, LCDs have become larger and more precise, and the address wiring connecting each TFT element has increased, and the electrical resistance and capacitance have increased accordingly. With the above high melting point metal having a high specific resistance of about 50 for Mo, about 50 for Cr, and about 80 μΩcm for Ti), the address pulse is delayed,
The use of these materials is becoming more difficult.

At present, in order to prevent the delay of the address pulse, the specific resistance of the wiring material of the LCD is about 30.
It is desired that the resistivity be equal to or less than μΩcm, and Au, Cu, and Al can be cited as metal species satisfying this. However, Au has poor etching characteristics necessary for forming a predetermined pattern shape after the formation of the sheet-like wiring film and is expensive, and Cu has problems in adhesion and corrosion resistance of the film, and Al has the above-mentioned problem. As described above, hillocks and the like are generated, so that it is difficult to use them as wiring materials.

[0005] Therefore, wiring and wiring which can solve the above-mentioned problems can be solved.
Al-Ta binary alloy thin films and Al-Ti binary alloy thin films have been proposed as electrode materials, that is, wiring / electrode materials having a specific resistance of 30 μΩcm or less and having excellent heat resistance and preventing hillocks and the like. It has come to be used for LCD wiring materials. However, in the future, if LCDs are further enlarged and have higher definition, even if these heat-resistant and low-resistance materials are used, it is expected that address pulse delay will occur. It is necessary to reduce the specific resistance to the following degree. Therefore, it has the same excellent heat resistance as the above-mentioned conventional LCD wiring and electrode materials (Al-Ta or Al-Ti binary Al alloy thin film) in order to respond to the demand for larger LCDs and higher definition in the future. At present, there is a demand for the development of new wiring and electrode materials (thin films) for LCDs having a specific resistance of 10 μΩcm or less.

[0006]

SUMMARY OF THE INVENTION The present invention has been made in view of such circumstances, and has as its object the purpose of providing a high-performance new device capable of solving the above-mentioned problems.
Al alloy thin film, that is, having a specific resistance of 10 μΩcm or less, and the above-mentioned conventional LCD wiring / electrode material (Al-Ta or Al-T
i) As in the case of the binary Al alloy thin film), it is excellent in heat resistance and hardly generates hillocks, and is excellent in corrosion resistance, film adhesion and etching characteristics (workability into a predetermined pattern shape).
An object of the present invention is to provide a method for producing an Al alloy thin film which can be suitably used as an LCD wiring / electrode and a sputtering target for forming the Al alloy thin film.

[0007]

In order to achieve the above object, a method for producing an Al alloy thin film and a sputtering target for forming an Al alloy thin film according to the present invention are described in claim 1 and claim 3. The sputtering target for forming an Al alloy thin film according to the second or fourth aspect of the present invention has the following configuration.

That is, the method for producing an Al alloy thin film according to the first aspect is characterized in that Al is one of the transition elements of the IVa, Va, VIa and VIIa groups.
Forming, on a substrate, an Al alloy thin film in which one or more of Si and Ge are dissolved in one or more of Si and Ge;
Part or all of the solid solution elements in the alloy thin film are heated at a heating temperature of 1
This is a method for producing an Al alloy thin film, wherein an Al alloy thin film having an electrical resistance value of 10 μΩcm or less is obtained by precipitating as an intermetallic compound by heat treatment at 00 to 600 ° C.

The sputtering target for forming an Al alloy thin film according to claim 2 is a sputtering target used for forming an Al alloy thin film on a substrate in the method for manufacturing an Al alloy thin film according to claim 1, wherein the sputtering target is IVa, Va. , VIa, VI
One or more of the group Ia transition elements and Si, Ge
Consisting of an Al alloy containing one or two of the above
This is a sputtering target for forming an alloy thin film.

[0010] The method for producing an Al alloy thin film according to claim 3 comprises:
The content of one or more of the transition elements in the Al alloy thin film is 0.1 to 5.0 at% in total, and Si,
The content of one or two of Ge is 0.1 to
2. The method for producing an Al alloy thin film according to claim 1, wherein the content is 5.0 at%.

According to a fourth aspect of the present invention, in the sputtering target for forming an Al alloy thin film, the content of one or more transition elements in the Al alloy is 0.1 to 5.0a in total.
3. The sputtering target for forming an Al alloy thin film according to claim 2, wherein the total content of at least one of Si and Ge is 0.1 to 5.0 at%.

[0012]

The present inventors have produced Al alloy sputtering targets obtained by adding various elements to Al, and using these targets, Al sputtering of various compositions is performed by sputtering.
An alloy thin film was formed, and its composition and characteristics such as heat resistance, hillock resistance, specific resistance, corrosion resistance, adhesion, and etching characteristics were examined. As a result, IVa, Va, VIa, and VIIa transition elements (hereinafter, referred to as IVa to VIIa transition elements), Si, Ge
(Hereinafter referred to as Si, etc.) is effective in improving the above characteristics, and the Al alloy thin film to which these elements are added is used as a wiring and electrode for LCD (a thin film wiring for a gate bus line or a source bus line in an LCD or the like). Or active matrix type
It has been found that it has excellent properties as a material for wiring or electrodes in switching elements such as LCDs.

That is, when one or more of the transition elements of groups IVa to VIIa are added to Al, the heat resistance and the corrosion resistance are improved with an increase in the added amount, but the specific resistance is increased. Therefore, although the transition element-containing Al alloy has sufficient heat resistance and corrosion resistance, it cannot satisfy the requirement of specific resistance: 10 μΩcm or less. However, when the transition element-containing alloy is further added with Si or the like to form a transition element or Si-containing aluminum alloy, the specific resistance is reduced, and the specific resistance: 10 μΩcm or less in a state satisfying requirements such as heat resistance and corrosion resistance. It has been found that the requirement of can be satisfied. The transition element and Si
By the addition of, for example, the adhesion and etching characteristics of the film (workability into a predetermined pattern shape) are not particularly reduced.
The conventional LCD wiring and electrode materials (Al-Ta or Al-Ti 2
(Al alloy thin film).

When an Al alloy thin film composed of an alloy containing a transition element and Si as described above is formed on a substrate in a state where the alloy components are dissolved, the specific resistance increases as the solid solution amount increases. Is enhanced by the so-called solid solution effect, heat resistance, corrosion resistance, etc. are enhanced.
-Ta or Al-Ti binary Al alloy thin film). After this film formation, when heat treatment is performed, the solid solution element in the Al alloy thin film precipitates as an intermetallic compound (intermetallic compound of a transition element and Si or the like), and the solid solution state, which is a factor of an increase in specific resistance, is formed. It was also found that the specific resistance can be further reduced because the total solid solution amount of the elements is reduced. This process actively uses the heating process after film formation as heat treatment,
Before and after the heating process (heat treatment), it satisfies the conditions of high heat resistance and low resistivity (high heat resistance is a requirement in the heating process, and low resistivity is a requirement after the heating process). It is extremely rational as a means to further increase the value.

Therefore, the method for producing an Al alloy thin film according to the present invention is based on the above findings,
An Al alloy thin film in which one or more of Va, Va, VIa, and VIIa transition elements) and one or two of Si and the like (Si, Ge) are formed as a solid solution on a substrate. After forming the Al
Part or all of the solid solution elements in the alloy thin film are heated at a heating temperature of 1
A method for producing an Al alloy thin film is characterized in that an Al alloy thin film having an electrical resistance value of 10 μΩcm or less is obtained by precipitating as an intermetallic compound by heat treatment at 00 to 600 ° C. As described above, this method can reliably satisfy the required conditions of high heat resistance and low specific resistance before and after the heating process (heat treatment), respectively, and is a very rational process as a means for further enhancing them.

Here, whether the solid solution element is precipitated as an intermetallic compound or part of the solid solution element by heat treatment,
In some cases, the amount (part of the total)
May be set according to the amount of solid solution elements before heat treatment, the required electric resistance value, and the like. The reason why the heating temperature at the time of the heat treatment is set to 100 to 600 ° C. is that if the temperature is lower than 100 ° C., the precipitation of the intermetallic compound is unlikely to occur, so that the electric resistance value cannot be less than 10 μΩcm. Because.

The above Al alloy thin film is preferably formed by a sputtering method for the following reason. That is, the transition elements of group IVa to VIIa
Although the solid solubility limit for is very small, the non-equilibrium solid solution is possible by the vapor phase quenching inherent to the sputtering method in the Al alloy thin film formed by the sputtering method.
This is because heat resistance and corrosion resistance can be significantly improved as compared with an Al alloy thin film formed by other ordinary thin film forming methods.

When the above-mentioned Al alloy thin film is formed by a sputtering method, one or two or more of IVa-VIIa transition elements (IVa, Va, VIa, VIIa transition elements) may be used as a sputtering target. What is necessary is just to use what consists of an Al alloy containing one or more types (Si, Ge). Such an Al alloy target has advantages such as that the composition of the formed Al alloy thin film is easily stabilized and that the amount of oxygen can be reduced, as compared with a composite target or the like.

The above Al alloy thin film (Al containing transition element and Si etc.)
Alloy), the content of one or more of the transition elements of groups IVa to VIIa is 0.1 to 5.0 at% in total;
It is desirable that the content of one or two of the above (Si, Ge) is 0.1 to 5.0 at% in total. The reason is as follows. IVa-VIIa transition element amount: 0.1a
If the content is less than t% or the content of Si, etc .: less than 0.1 at%, the amount of the solid solution element is too small and the heat resistance is insufficient, and the heating process (heat treatment) causes problems such as generation of hillocks, and IVa to VIIa.
Group transition element amount: more than 5.0 at% or amount of Si or the like: 5.0
If the content exceeds at%, even if the amount of the solid solution element is too large and the precipitation of the intermetallic compound occurs in the heating process (heat treatment), the residual amount of the solid solution element after the heat treatment is large. This is because it cannot be satisfied.

The elements of group IVa are Ti, Zr, Hf, the elements of group Va are V, Nb, Ta, the elements of group VIa are Cr, Mo, W, and the elements of group VIIa are Mn, Tc, Re. .

[0021]

EXAMPLES (Example 1) Pure Al target (purity 99.999)
%), A composite target in which a predetermined amount of a 5 mm square Ta (Va group transition element) chip and a Si or Ge chip are installed,
Using a smelting Al alloy sputtering target containing a predetermined amount of Ta and Si or Ge, a DC magnetron sputtering method is used to form a 3000 mm thick glass substrate on a 0.5 mm thick glass substrate.
An Al—Ta—Si ternary Al alloy thin film and an Al—Ta—Ge ternary Al alloy thin film of Å were formed. Next, the thin film is processed into a stripe pattern having a width of 100 μm and a length of 10 mm by photolithography and wet etching.
(00, 300, 400, 500 ° C.) for 1 hour.

The thin film has four terminals (probes).
The specific resistance was measured at room temperature by the method. The results are shown in FIG. 1 as a relationship between the vacuum heat treatment temperature and the specific resistance. Al-Ta-
The specific resistance of the Si ternary Al alloy thin film and the Al-Ta-Ge ternary Al alloy thin film is lower than the specific resistance of the Al-Ta binary Al alloy thin film, indicating that the specific resistance is reduced. . Comparing the Al-Ta-Si ternary Al alloy thin film with the Al-Ta-Ge ternary Al alloy thin film, the former has a lower specific resistance, and Si has a greater effect of lowering the specific resistance than Ge. I understand.

Example 2 A similar Al-Ta-Si ternary Al alloy thin film was formed on a similar glass substrate by the same method as in Example 1, and then formed into a 10 μm-wide stripe pattern by the same method. After processing, vacuum heat treatment was performed under the same conditions. Then, in order to evaluate the heat resistance, after the heat treatment, the number of hillocks (hemispherical projections) generated on the stripe pattern surface was measured, and the hillock density (the number of hillocks per unit area) was determined. FIG. 2 shows the relationship between the heat treatment temperature and the hillock density. Al-Ta-Si ternary Al alloy thin film is compared with Al-Ta ternary Al alloy thin film,
It can be seen that the hillock density is small and therefore the heat resistance is excellent. Further, it can be seen that the hillock density is lower and the heat resistance is more excellent as the amount of Si added is larger.

(Embodiment 3) Instead of Ta in Embodiment 1, Mn
(Group VIIa transition element), Si or Ge was Ge, and the same target was used in the same manner as in Example 1 except for the same target, and an Al-Mn-Ge ternary Al alloy thin film having the same thickness was similarly formed. Formed on a glass substrate. Next, after processing into the same stripe pattern shape by the same method as in Example 1, vacuum heat treatment was performed under the same conditions. Then, the specific resistance value was measured in the same manner as in Example 1. The result is shown in FIG.
Shown in Al-Mn-Ge ternary Al alloy thin film is Al-Mn binary Al
It can be seen that the specific resistance is lower than that of the alloy thin film, and the specific resistance is lower as the amount of Ge added is larger.

Example 4 A similar Al-Mn-Ge ternary Al alloy thin film was formed on a similar glass substrate by the same method as in Example 3, and then formed into a stripe pattern having a width of 10 μm by the same method. After processing, vacuum heat treatment was performed under the same conditions. Then, the hillock density was determined in the same manner as in Example 2. The result is shown in FIG. Al-Mn-Ge ternary system
The Al alloy thin film has a lower hillock density and better heat resistance than the Al-Mn binary Al alloy thin film, and the higher the amount of Si added, the lower the hillock density and better heat resistance. I understand.

(Embodiment 5) Instead of Ta in Embodiment 1, Ti
(Group IVa transition element), Si or Ge was used instead of Si.
An Al-Ti-Si ternary Al alloy thin film of the same thickness was formed by the same method using the same target as in Example 1 except for this point, and then processed into the same stripe pattern shape by the same method. Was subjected to a vacuum heat treatment. Then, the specific resistance was measured in the same manner as in Example 1. The result is shown in FIG. Al-Ti-Si ternary Al alloy thin film is Al-Ti ternary
It can be seen that the specific resistance is lower than that of the Al alloy thin film, and that the specific resistance is lower as the amount of added Si is larger.

In the above embodiment, the alloy component IVa
VIIa, one kind of transition element and one kind such as Si are added, and the above-mentioned effect is obtained. Such an effect is obtained by two or more kinds of IVa-VIIa transition element and Si etc. It is also obtained when two types are added.

(Example 6) Using a smelting Al alloy sputtering target and a DC magnetron sputtering method, a Ta amount: 1.5 at on a SiO ₂ (thickness: 100 nm) / Si (thickness: 0.25 mm) substrate. % And Si content: thickness containing 3.0 at%: 0.5
μm Al alloy thin film A ₁ (Example of the present invention) is formed.
A 0.5 μm Al thin film R ₁ (comparative example) was formed. These thin films were measured for film stress at each temperature in a heating and cooling process in which the temperature was raised from 25 ° C. to 500 ° C. at a rate of 5 ° C./min, and then lowered from 500 ° C. to 25 ° C. Here, the film stress was determined by measuring the amount of warpage of the substrate with a laser. The result is shown in FIG. Comparative Example R ₁ at Atsushi Nobori is 200 ° C.
In respect to the yield, the present invention Example A ₁ surrenders at 400 ° C.. Since the film is plastically deformed at yield above temperature range, towards the invention sample A ₁ is the amount of plastic deformation is small. Therefore, tensile stress occurs during the temperature decrease (due to the difference in thermal expansion between the metal wiring film and the interlayer insulating film) is smaller towards the invention sample A _1, SM (stress migration) it is unlikely to occur (i.e. resistance to SM resistance It is excellent).

(Embodiment 7) The amount of Ta in the Al alloy thin film A was
0.1, 0.8, 1.5, 2.3, 3.0at%, Si content 0.1, 1.5, 3.0, 4.
A ₂ changed to 5, 6.0 at% (Example A ₂ )
8, 3.2at%, Si content changed to 0.08, 6.5at% R
₂ (Example R ₂ ), a test similar to that in Example 6 was performed.
As a result, Example A ₂ Comparative Example R _1, it was confirmed to have excellent resistance to SM resistance compared to Example R _2.

(Embodiment 8) In the same manner as in Embodiment 6, on a SiO ₂ (thickness: 100 nm) / Si (thickness: 0.25 mm) substrate,
Al alloy thin films A ₁ (inventive example) and R ₁ (comparative example) having the same composition and the same thickness as in Example 6 were formed. Next, these thin films were subjected to a heat treatment of heating at 400 ° C. for 60 minutes, and then processed into a predetermined test pattern shape (a linear pattern having a width of 1 μm and a length of 3 mm) by photolithography and etching. Thereafter, the thin film was heated to 200 ° C. and 5 × 10 ⁶ A
An electric current test was conducted at a constant current of / cm ² to measure the failure time (time until disconnection occurs). The result is shown in FIG. 7 as a relationship between the failure time and the cumulative failure rate (the ratio of the total number of failed samples up to a certain time). A ₁ that of the present invention example, compared to that R ₁ of the comparative example, the average time to failure (time cumulative failure rate is 50%) is approximately 10 times longer, therefore the resistance to EM resistance (electromigration resistance) It turns out that it is excellent.

The above heat treatment conditions were replaced with 400 ° C. × 60 minutes, 200 ° C. × 30 minutes, 200 ° C. × 60 minutes, 300 ° C. × 30 minutes, 300 ° C. × 60 minutes, 400 ° C. × 30 minutes, 600 ° C. × 60 minutes. The same processing and energization test as described above were performed on the sample for 30 minutes at 600 ° C. for 60 minutes. As a result, those of the present invention
In A _1, to be excellent in resistance to EM resistance was confirmed in comparison to those R ₁ also comparative examples Izure those subjected to these heat treatments.

[0032] Ta in the present invention Example A ₁ (Example 9) Example 6
Instead of another IVa, Va, those using an element of VIa group A ₃ (present invention examples), for further one A ₄ using Ge instead of Si (invention example), as in Example 6 and 8 A similar test was performed. As a result, we obtained the same tendency as in Example 6, 8, A ₃ and A ₄ those of the present invention example compared to Comparative Example R _1, anti-SM resistance and EM
It was excellent. Further, in the present invention Example _{A 3, A 4, IVa,} V
The SM resistance and the EM resistance do not differ so much depending on the types of the elements of the a and VIa groups, but were particularly excellent in the IVa and Va groups, and particularly excellent in the Va group.

In Examples 6 to 9 above, IVa,
One kind of Va, VIa group element and one kind such as Si are used, and the effects as described above are obtained.
It can also be obtained when two or more elements of the Va and VIa group and / or two elements such as Si are added.

[0034]

The present invention has the above-mentioned structure and functions. The method of manufacturing an Al alloy thin film according to the present invention provides an Al alloy thin film having excellent characteristics [that is, a specific resistance of 1;
0μΩcm or less and, like the conventional LCD wiring and electrode materials (Al-Ta or Al-Ti binary Al alloy thin film), have excellent heat resistance, hardly cause hillocks, etc. It has excellent adhesion and etching characteristics (workability to form a predetermined pattern) and can be suitably used as wiring and electrode materials for LCDs (Liquid Crystal Display Panels). Al alloy thin films that can respond to and contribute to the future increase in size and definition of LCDs) can be reliably manufactured. It is possible to reliably and sufficiently satisfy the conditions of high heat resistance and low specific resistance, and it is possible to further enhance the requirements.

The sputtering target according to the present invention can be suitably used when the above-mentioned Al alloy thin film is formed by a sputtering method, the composition of the formed Al alloy thin film is easily stabilized, and the amount of oxygen is reduced. It has the advantage of obtaining an Al alloy thin film with more stable characteristics.

[Brief description of the drawings]

FIG. 1 is a diagram showing a relationship between a heat treatment temperature and a specific resistance in a method for manufacturing an Al alloy thin film according to Example 1.

FIG. 2 is a diagram showing a relationship between a heat treatment temperature and a hillock density in the method for manufacturing an Al alloy thin film according to Example 2.

FIG. 3 is a diagram showing a relationship between a heat treatment temperature and a specific resistance in a method for manufacturing an Al alloy thin film according to Example 3.

FIG. 4 is a diagram showing a relationship between a heat treatment temperature and a hillock density in the method for manufacturing an Al alloy thin film according to Example 4.

FIG. 5 is a diagram showing the relationship between the heat treatment temperature and the specific resistance in the method for manufacturing an Al alloy thin film according to Example 5.

FIG. 6 is a diagram showing the relationship between the temperature during heating and cooling and the film stress of an Al alloy thin film obtained by the method for manufacturing an Al alloy thin film according to Example 6.

FIG. 7 is a diagram showing the relationship between the failure time and the cumulative failure rate of an Al alloy thin film obtained by the method for manufacturing an Al alloy thin film according to Example 8.

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H01L 21/285 H01L 21/285 S (72) Inventor Eiji Iwamura 1-5-5 Takatsukadai, Nishi-ku, Kobe-shi, Hyogo Prefecture 5 Kobe Steel, Ltd.Kobe Research Institute (72) Inventor Masago Yamamoto 1-5-5 Takatsukadai, Nishi-ku, Kobe City, Hyogo Prefecture Kobe Steel, Ltd.Kobe Research Institute (72) Inventor Kazuo Yoshikawa Hyogo 1-5-5 Takatsukadai, Nishi-ku, Kobe, Japan F-term in Kobe Steel, Ltd. Kobe Research Institute 2H092 GA32 GA40 JA37 JB22 JB31 KA18 KB04 MA05 NA28 4K029 AA09 BA23 BC03 BC05 BD00 BD02 CA05 DC03 DC04 DC15 DC39 GA01 4M104 AA10 BB02 DD37 DD40 DD63 DD78 GG09 HH01 HH02 HH03 HH09 HH16

Claims (4)

[Claims] 1. An Al alloy thin film in which one or more of transition elements of the IVa, Va, VIa, and VIIa groups and one or two of Si and Ge are dissolved in Al. After being formed on the substrate, part or all of the solid solution elements in the Al alloy thin film are precipitated as an intermetallic compound by heat treatment at a heating temperature of 100 to 600 ° C., and an electric resistance value of the Al alloy thin film of 10 μΩcm or less. A method for producing an Al alloy thin film, comprising: 2. A sputtering target used for forming an Al alloy thin film on a substrate in the method for manufacturing an Al alloy thin film according to claim 1, wherein the sputtering target is one of transition elements of the IVa, Va, VIa, and VIIa groups. A sputtering target for forming an Al alloy thin film comprising an Al alloy containing at least one of Si and Ge and at least one of Si and Ge. 3. One of the transition elements in the Al alloy thin film.
The content of the species or two or more species is 0.1 to 5.0 at total.
2. The method for producing an Al alloy thin film according to claim 1, wherein the content of one or two of Si and Ge is 0.1 to 5.0 at% in total. 4. The total content of one or more of transition elements in the Al alloy is 0.1 to 5.0 at%, and one or two of Si and Ge The sputtering target for forming an Al alloy thin film according to claim 2, wherein the total content is 0.1 to 5.0 at%.