JP2002320381A - Power converter - Google Patents
Power converterInfo
- Publication number
- JP2002320381A JP2002320381A JP2001123522A JP2001123522A JP2002320381A JP 2002320381 A JP2002320381 A JP 2002320381A JP 2001123522 A JP2001123522 A JP 2001123522A JP 2001123522 A JP2001123522 A JP 2001123522A JP 2002320381 A JP2002320381 A JP 2002320381A
- Authority
- JP
- Japan
- Prior art keywords
- conductor
- semiconductor switch
- load
- power supply
- path
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、直流電源からチョ
ッパ回路により任意の直流電力を取り出す直流−直流電
力変換装置に係り、特に自己消弧型の半導体スイッチを
用いたチョッパ回路に好適な電力変換装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a DC-DC power converter for extracting arbitrary DC power from a DC power supply by a chopper circuit, and more particularly to a power converter suitable for a chopper circuit using a self-extinguishing type semiconductor switch. Related to the device.
【０００２】[0002]
【従来の技術】図２（ａ）は降圧チョッパ回路の概略を
示す回路図、図２（ｂ）はその負荷電流の波形図であ
る。図２（ａ）で、半導体スイッチ１２をオンすると、
直流電源１１から負荷１５へ供給される電流Ｉcは、直
流リアクトル１４があるため徐々に増加する。次に、半
導体スイッチ１２をオフにすると、直流リアクトル１４
に蓄えられたエネルギーにより、フリーホイリングダイ
オード１３を通じて負荷１５へ電流Ｉfが流れる。負荷
１５に流れる負荷電流は、図２（ｂ）に示すようにΔＩ
だけ変動を繰り返す。2. Description of the Related Art FIG. 2A is a circuit diagram schematically showing a step-down chopper circuit, and FIG. 2B is a waveform diagram of the load current. In FIG. 2A, when the semiconductor switch 12 is turned on,
Current I c supplied from the DC power supply 11 to the load 15 is gradually increased because of the DC reactor 14. Next, when the semiconductor switch 12 is turned off, the DC reactor 14 is turned off.
The current If flows to the load 15 through the free-wheeling diode 13 due to the energy stored in the. The load current flowing through the load 15 is ΔI as shown in FIG.
Repeat the change only.
【０００３】ここで例えば、絶縁ゲートバイポーラトラ
ンジスタ（ＩＧＢＴ）のような自己消弧型の半導体スイ
ッチを半導体スイッチ１２として用いたとき、半導体ス
イッチ１２がオンからオフへ切り替わる電流遮断時に、
半導体スイッチ１２の端子間電圧Ｖsが跳ね上がる現象
が発生する。この半導体スイッチ１２の電流遮断時の跳
ね上がり電圧の大きさは、直流電源１１から半導体スイ
ッチ１２までのインダクタンスの大きさに比例する。跳
ね上がり電圧が過大になると半導体スイッチ１２が過電
圧で破壊される恐れがあるため、通常は、コンデンサを
主体とするスナバ回路を付加して跳ね上がり電圧を吸収
している。Here, for example, when a semiconductor switch of a self-extinguishing type such as an insulated gate bipolar transistor (IGBT) is used as the semiconductor switch 12, when the semiconductor switch 12 switches off from on to off,
Phenomenon terminal voltage V s of the semiconductor switch 12 from jumping occurs. The magnitude of the jump voltage of the semiconductor switch 12 when the current is interrupted is proportional to the magnitude of the inductance from the DC power supply 11 to the semiconductor switch 12. If the jump voltage becomes excessive, the semiconductor switch 12 may be destroyed by the over voltage. Therefore, usually, a snubber circuit mainly including a capacitor is added to absorb the jump voltage.
【０００４】図３は、降圧チョッパ回路を有する従来の
電力変換装置の主回路の構成図である。チョッパ回路の
半導体スイッチ１２及びフリーホイリングダイオード１
３は、モジュール素子１内に構成されている。モジュー
ル素子１の各端子は、それぞれＰ側引き出し導体３１，
Ｎ側引き出し導体３２，出力引き出し導体３３を介して
Ｐ側共通導体４１，Ｎ側共通導体４２，出力共通導体４
３へ接続されている。なお、図３では１つのモジュール
素子１のみが示されているが、複数のモジュール素子が
同様にして、Ｐ側引き出し導体３１，Ｎ側引き出し導体
３２，出力引き出し導体３３を介してＰ側共通導体４
１，Ｎ側共通導体４２，出力共通導体４３へ接続され
る。FIG. 3 is a configuration diagram of a main circuit of a conventional power converter having a step-down chopper circuit. Semiconductor switch 12 and freewheeling diode 1 of chopper circuit
3 is configured in the module element 1. Each terminal of the module element 1 is connected to a P-side lead conductor 31,
P-side common conductor 41, N-side common conductor 42, output common conductor 4 via N-side lead conductor 32 and output lead conductor 33
3 is connected. Although only one module element 1 is shown in FIG. 3, a plurality of module elements are similarly connected via a P-side lead conductor 31, an N-side lead conductor 32, and an output lead conductor 33 to a P-side common conductor. 4
1, the N-side common conductor 42 and the output common conductor 43 are connected.
【０００５】直流電源１１に接続されたＰ側共通導体４
１及びＮ側共通導体４２は、コンデンサ等の付加回路の
組立性を考慮して、モジュール素子１の端子面と直交す
る方向に並べられている。そして、Ｐ側引き出し導体３
１及びＮ側引き出し導体３２は、モジュール素子１の各
端子からＰ側共通導体４１及びＮ側共通導体４２までの
距離を最短にするように斜めに構成されており、これに
よりインダクタンスを低減して半導体スイッチ１２の電
流遮断時の跳ね上がり電圧を抑制している。The P-side common conductor 4 connected to the DC power supply 11
The 1 and N-side common conductors 42 are arranged in a direction orthogonal to the terminal surface of the module element 1 in consideration of the assemblability of an additional circuit such as a capacitor. And the P-side lead conductor 3
The 1 and N-side lead conductors 32 are obliquely configured to minimize the distance from each terminal of the module element 1 to the P-side common conductor 41 and the N-side common conductor 42, thereby reducing inductance. The jump voltage at the time of current interruption of the semiconductor switch 12 is suppressed.
【０００６】[0006]
【発明が解決しようとする課題】図４は、降圧チョッパ
回路を有する従来の電力変換装置の主回路に発生する磁
束変化の説明図である。降圧チョッパ回路の負荷電流が
ΔＩだけ変動を繰り返すため、出力引き出し導体３３の
図４（ａ），図４（ｂ）に破線矢印で示した電流変化Δ
Ｉに比例して、出力引き出し導体３３の周りに磁束φC
が発生する。この磁束φCがモジュール素子１の設置さ
れた金属筐体２に鎖交すると、金属筐体２には鎖交磁束
を打ち消すために渦電流が流れ、金属抵抗による渦電流
損で誘導加熱が発生する。この金属筐体２に発生する誘
導加熱は、電力変換装置が大容量化して負荷電流が大き
くなる程顕著となる。従来、金属筐体の誘導加熱の対策
としては、抵抗の低いアルミニウム等の非磁性金属の使
用や、磁気シールド等が試行されていた。FIG. 4 is an explanatory diagram of a change in magnetic flux generated in a main circuit of a conventional power converter having a step-down chopper circuit. Since the load current of the step-down chopper circuit repeatedly fluctuates by ΔI, the current change Δ of the output lead-out conductor 33 shown by a broken arrow in FIGS. 4A and 4B.
In proportion to I, the magnetic flux φ C around the output lead-out conductor 33
Occurs. When the magnetic flux φ C interlinks with the metal housing 2 in which the module element 1 is installed, an eddy current flows in the metal housing 2 to cancel the interlinkage magnetic flux, and induction heating occurs due to eddy current loss due to metal resistance. I do. The induction heating that occurs in the metal casing 2 becomes more remarkable as the power converter increases in capacity and the load current increases. Conventionally, as a countermeasure against induction heating of a metal housing, use of a non-magnetic metal such as aluminum having a low resistance, a magnetic shield, and the like have been tried.
【０００７】本発明は、金属筐体に発生する誘導加熱を
抑制することを目的とする。本発明はまた、半導体スイ
ッチの電流遮断時の跳ね上がり電圧を抑制することを目
的とする。An object of the present invention is to suppress induction heating generated in a metal housing. Another object of the present invention is to suppress a jump voltage at the time of current interruption of a semiconductor switch.
【０００８】[0008]
【課題を解決するための手段】本発明に係る電力変換装
置は、自己消弧型の半導体スイッチとフリーホイリング
ダイオードとを含むチョッパ回路と、直流電源の正極側
と半導体スイッチの入力側とを接続する第１の導体と、
負荷と直流電源の負極側とを接続する第１の経路と、負
荷とフリーホイリングダイオードのアノード側とを接続
する第２の経路とを有する第２の導体と、半導体スイッ
チの出力側及びフリーホイリングダイオードのカソード
側と負荷とを接続する第３の導体とを備え、第２の導体
の第１及び第２の経路と第３の導体とを平行に近接して
配置したものである。第２の導体の負荷と直流電源の負
極側とを接続する第１の経路及び負荷とフリーホイリン
グダイオードのアノード側とを接続する第２の経路に流
れる電流は、半導体スイッチの出力側及びフリーホイリ
ングダイオードのカソード側と負荷とを接続する第３の
導体に流れる電流とは逆向きとなる。従って、第２の導
体の第１及び第２の経路と第３の導体とを平行に近接し
て配置すると、互いの導体で発生する磁束が打ち消さ
れ、金属筐体に鎖交する磁束が減少して誘導加熱が抑制
される。A power converter according to the present invention includes a chopper circuit including a self-extinguishing type semiconductor switch and a free-wheeling diode, a positive electrode of a DC power supply, and an input of the semiconductor switch. A first conductor to be connected;
A second conductor having a first path connecting the load and the negative electrode side of the DC power supply, a second path connecting the load and the anode side of the free-wheeling diode, an output side of the semiconductor switch and a free path; A third conductor for connecting the cathode side of the wheeling diode to the load is provided, and the first and second paths of the second conductor and the third conductor are arranged in parallel and close to each other. The current flowing in the first path connecting the load of the second conductor to the negative electrode side of the DC power supply and the second path connecting the load and the anode side of the free-wheeling diode are output from the output side of the semiconductor switch and the free path. The direction is opposite to the current flowing through the third conductor connecting the cathode side of the wheeling diode and the load. Accordingly, when the first and second paths of the second conductor and the third conductor are arranged in parallel and close to each other, the magnetic flux generated in each conductor is canceled out, and the magnetic flux linked to the metal housing is reduced. As a result, induction heating is suppressed.
【０００９】さらに、本発明に係る電力変換装置は、第
２の導体の第１の経路と第１の導体とを平行に近接して
配置したものである。第２の導体の負荷と直流電源の負
極側とを接続する第１の経路に流れる電流は、直流電源
の正極側と半導体スイッチの入力側とを接続する第１の
導体に流れる電流とは逆向きとなる。従って、第２の導
体の第１の経路と第１の導体とを平行に近接して配置す
ると、互いの導体で発生する磁束が打ち消され、金属筐
体に鎖交する磁束が減少して誘導加熱が抑制される。ま
た、互いの導体の自己インダクタンスが打ち消されるの
で、直流電源から半導体スイッチまでのインダクタンス
が減少して、半導体スイッチの電流遮断時の跳ね上がり
電圧が抑制される。Further, in the power converter according to the present invention, the first path of the second conductor and the first conductor are arranged in parallel and close to each other. The current flowing through the first path connecting the load of the second conductor and the negative side of the DC power supply is opposite to the current flowing through the first conductor connecting the positive side of the DC power supply and the input side of the semiconductor switch. Orientation. Therefore, when the first path of the second conductor and the first conductor are arranged in parallel and close to each other, the magnetic flux generated in the conductors is canceled out, and the magnetic flux linked to the metal housing is reduced to induce the induction. Heating is suppressed. In addition, since the self-inductance of the conductors is canceled, the inductance from the DC power supply to the semiconductor switch is reduced, and the surge voltage at the time of current interruption of the semiconductor switch is suppressed.
【００１０】[0010]
【発明の実施の形態】以下、本発明の実施の形態を添付
図面に従って説明する。図１は、本発明の一実施の形態
による電力変換装置の主回路の構成図である。本実施の
形態は、半導体スイッチ１２として絶縁ゲートバイポー
ラトランジスタ（ＩＧＢＴ）を使用した例を示してい
る。Embodiments of the present invention will be described below with reference to the accompanying drawings. FIG. 1 is a configuration diagram of a main circuit of a power conversion device according to an embodiment of the present invention. This embodiment shows an example in which an insulated gate bipolar transistor (IGBT) is used as the semiconductor switch 12.
【００１１】図１において、チョッパ回路の半導体スイ
ッチ１２及びフリーホイリングダイオード１３は、モジ
ュール素子１内に構成されている。第１の導体２１は、
直流電源１１の正極側と半導体スイッチ１２の入力側と
を接続している。第２の導体２２は、電流経路が途中で
分岐しており、負荷１５と直流電源１１の負極側とを接
続する第１の経路と、負荷１５とフリーホイリングダイ
オード１３のアノード側とを接続する第２の経路とを有
する。第３の導体２３は、半導体スイッチ１２の出力側
及びフリーホイリングダイオード１３のカソード側と負
荷１５とを接続している。そして、第２の導体２２の第
１及び第２の経路の共通部分と第３の導体２３とが、互
いに平行に近接して配置されている。また、第２の導体
２２の第１の経路と第１の導体２１も、互いに平行に近
接して配置されている。なお、第２の導体２２と第３の
導体２３の間、及び第２の導体２２と第１の導体２１の
間には、図示は省略するが絶縁フィルム等により絶縁層
が形成されている。In FIG. 1, a semiconductor switch 12 and a freewheeling diode 13 of a chopper circuit are formed in a module element 1. The first conductor 21
The positive side of the DC power supply 11 and the input side of the semiconductor switch 12 are connected. The second conductor 22 has a current path branched in the middle, and connects the load 15 to the negative side of the DC power supply 11, and connects the load 15 to the anode side of the free-wheeling diode 13. And a second path to be performed. The third conductor 23 connects the output side of the semiconductor switch 12 and the cathode side of the freewheeling diode 13 to the load 15. The common portion of the first and second paths of the second conductor 22 and the third conductor 23 are arranged in parallel and close to each other. Further, the first path of the second conductor 22 and the first conductor 21 are also arranged in parallel and close to each other. Although not shown, an insulating layer is formed between the second conductor 22 and the third conductor 23 and between the second conductor 22 and the first conductor 21 by an insulating film or the like.
【００１２】図１において、第３の導体２３に破線矢印
で示した電流が流れるとき、第２の導体２２の第１及び
第２の経路の共通部分には破線矢印で示した逆向きの電
流が流れる。従って、第３の導体２３に流れる電流によ
り発生する磁束φCは、第２の導体２２の第１及び第２
の経路の共通部分に流れる電流により発生する磁束φ n
で打ち消される。このため、金属筐体２に鎖交する磁束
が減少し、金属筐体２に発生する渦電流損が減少して誘
導加熱が抑制される。In FIG. 1, the third conductor 23 has a dashed arrow.
When the current shown by the symbol flows, the first and second conductors 22
In the common part of the second route, the reverse
The current flows. Therefore, the current flowing through the third conductor 23
Magnetic flux φCAre the first and second conductors of the second conductor 22.
Flux generated by the current flowing in the common part of the path n
Canceled by Therefore, the magnetic flux linked to the metal housing 2
Eddy current loss generated in the metal housing 2 is reduced
Induction heating is suppressed.
【００１３】同様に、第１の導体２１に破線矢印で示し
た電流が流れるとき、第２の導体２２の第１の経路には
破線矢印で示した逆向きの電流が流れる。従って、第１
の導体２１に流れる電流により発生する磁束は、第２の
導体２２の第１の経路に流れる電流により発生する磁束
で打ち消される。このため、金属筐体２に鎖交する磁束
が減少し、金属筐体２に発生する渦電流損が減少して誘
導加熱が抑制される。Similarly, when the current indicated by the dashed arrow flows through the first conductor 21, the reverse current indicated by the dashed arrow flows through the first path of the second conductor 22. Therefore, the first
The magnetic flux generated by the current flowing through the conductor 21 is canceled by the magnetic flux generated by the current flowing through the first path of the second conductor 22. For this reason, the magnetic flux linked to the metal housing 2 is reduced, the eddy current loss generated in the metal housing 2 is reduced, and the induction heating is suppressed.
【００１４】また、互いに逆向きの電流が流れる２つの
導体は、発生する磁束を打ち消すだけでなく、互いの導
体の自己インダクタンスを打ち消す作用を持つ。従っ
て、第２の導体２２の第１の経路と第１の導体２１とを
互いに平行に近接して配置することにより、直流電源１
１から半導体スイッチ１２までのインダクタンスが減少
して、半導体スイッチ１２の電流遮断時の跳ね上がり電
圧が抑制される。The two conductors through which currents flow in opposite directions not only cancel the generated magnetic flux but also cancel the self-inductance of the conductors. Therefore, by arranging the first path of the second conductor 22 and the first conductor 21 in parallel and close to each other, the DC power supply 1
The inductance from 1 to the semiconductor switch 12 is reduced, and the jump voltage at the time of current interruption of the semiconductor switch 12 is suppressed.
【００１５】図５は、降圧チョッパ回路を有する従来の
電力変換装置に流れる電流の説明図である。図５の破線
矢印は、半導体スイッチ１２がオンしているときに流れ
る電流を示している。図５に示すように、直流電源１１
の正極側と半導体スイッチ１２の入力側とを接続するＰ
側引き出し導体３１と、負荷１５とフリーホイリングダ
イオード１３のアノード側とを接続するＮ側引き出し導
体３２とでは、同時に逆向きの電流が流れない。従っ
て、従来の電力変換装置では、Ｐ側引き出し導体３１と
Ｎ側引き出し導体３２とが平行に配置されていても、本
発明のように直流電源１１から半導体スイッチ１２まで
のインダクタンスを減少する効果は発揮されない。FIG. 5 is an explanatory diagram of a current flowing through a conventional power converter having a step-down chopper circuit. 5 indicates a current flowing when the semiconductor switch 12 is turned on. As shown in FIG.
Connecting the positive side of the switch to the input side of the semiconductor switch 12
In the side lead-out conductor 31 and the N-side lead-out conductor 32 connecting the load 15 and the anode side of the free-wheeling diode 13, no current flows in the opposite directions at the same time. Therefore, in the conventional power converter, even when the P-side lead conductor 31 and the N-side lead conductor 32 are arranged in parallel, the effect of reducing the inductance from the DC power supply 11 to the semiconductor switch 12 as in the present invention is not obtained. Not demonstrated.
【００１６】本実施の形態ではチョッパ回路の半導体ス
イッチ及びフリーホイリングダイオードがモジュール素
子内に構成されていたが、本発明はモジュール素子に限
らず適用できる。また、本実施の形態では半導体スイッ
チとして絶縁ゲートバイポーラトランジスタ（ＩＧＢ
Ｔ）を使用した例を示したが、本発明の半導体スイッチ
はこれに限らず、ゲートターンオフサイリスタ（ＧＴ
Ｏ），電界効果トランジスタ（ＦＥＴ），ＭＯＳＦＥＴ
等、自己消弧型の半導体スイッチであればよい。なお、
本発明の第１の導体，第２の導体，第３の導体の形状
は、以上説明した実施の形態に限らず、第２の導体の第
１及び第２の経路と第３の導体とを平行に近接して配置
できるもの、または第２の導体の第１の経路と第１の導
体とを平行に近接して配置できるものであれば、様々な
形状を工夫することができる。In the present embodiment, the semiconductor switch and the freewheeling diode of the chopper circuit are configured in the module element, but the present invention can be applied not only to the module element. In this embodiment, an insulated gate bipolar transistor (IGB) is used as a semiconductor switch.
T), the semiconductor switch of the present invention is not limited to this, and the gate turn-off thyristor (GT)
O), field effect transistor (FET), MOSFET
For example, a self-extinguishing type semiconductor switch may be used. In addition,
The shapes of the first conductor, the second conductor, and the third conductor of the present invention are not limited to the above-described embodiment, and the first and second paths of the second conductor and the third conductor may be used. Various shapes can be devised as long as they can be arranged in parallel and close, or can be arranged in parallel with the first path of the second conductor and the first conductor.
【００１７】[0017]
【発明の効果】本発明によれば、第２の導体の負荷と直
流電源の負極側とを接続する第１の経路及び負荷とフリ
ーホイリングダイオードのアノード側とを接続する第２
の経路と、半導体スイッチの出力側及びフリーホイリン
グダイオードのカソード側と負荷とを接続する第３の導
体とを平行に近接して配置することにより、金属筐体の
鎖交磁束が減少して、金属筐体に発生する誘導加熱を抑
制することができる。また、本発明によれば、第２の導
体の負荷と直流電源の負極側とを接続する第１の経路
と、直流電源の正極側と半導体スイッチの入力側とを接
続する第１の導体とを平行に近接して配置することによ
り、直流電源から半導体スイッチまでのインダクタンス
が減少して、半導体スイッチの電流遮断時の跳ね上がり
電圧を抑制することができる。According to the present invention, the first path connecting the load of the second conductor to the negative electrode of the DC power supply and the second path connecting the load to the anode of the free-wheeling diode.
And the third conductor connecting the output side of the semiconductor switch and the cathode side of the free-wheeling diode to the load are arranged in parallel and close to each other, so that the flux linkage of the metal housing is reduced. In addition, induction heating generated in the metal housing can be suppressed. Further, according to the present invention, the first path connecting the load of the second conductor to the negative side of the DC power supply, the first path connecting the positive side of the DC power supply and the input side of the semiconductor switch, and Are arranged in parallel and close to each other, the inductance from the DC power supply to the semiconductor switch is reduced, and the surge voltage at the time of interrupting the current of the semiconductor switch can be suppressed.
【図１】 本発明の一実施の形態による電力変換装置の
主回路の構成図である。FIG. 1 is a configuration diagram of a main circuit of a power conversion device according to an embodiment of the present invention.
【図２】 図２（ａ）は降圧チョッパ回路の概略を示す
回路図、図２（ｂ）はその負荷電流の波形図である。FIG. 2A is a circuit diagram schematically showing a step-down chopper circuit, and FIG. 2B is a waveform diagram of the load current.
【図３】 降圧チョッパ回路を有する従来の電力変換装
置の主回路の構成図である。FIG. 3 is a configuration diagram of a main circuit of a conventional power converter having a step-down chopper circuit.
【図４】 降圧チョッパ回路を有する従来の電力変換装
置の主回路に発生する磁束変化の説明図である。FIG. 4 is an explanatory diagram of a change in magnetic flux generated in a main circuit of a conventional power converter having a step-down chopper circuit.
【図５】 降圧チョッパ回路を有する従来の電力変換装
置に流れる電流の説明図である。FIG. 5 is an explanatory diagram of a current flowing in a conventional power converter having a step-down chopper circuit.
１…モジュール素子、２…金属筐体、１１…直流電源、
１２…半導体スイッチ、１３…フリーホイリングダイオ
ード、１４…直流リアクトル、１５…負荷、２１…第１
の導体、２２…第２の導体、２３…第３の導体DESCRIPTION OF SYMBOLS 1 ... Module element, 2 ... Metal housing, 11 ... DC power supply,
12: semiconductor switch, 13: free-wheeling diode, 14: DC reactor, 15: load, 21: first
, 22 ... second conductor, 23 ... third conductor
Claims (2)
イリングダイオードとを含むチョッパ回路と、 直流電源の正極側と前記半導体スイッチの入力側とを接
続する第１の導体と、 負荷と直流電源の負極側とを接続する第１の経路と、負
荷と前記フリーホイリングダイオードのアノード側とを
接続する第２の経路とを有する第２の導体と、 前記半導体スイッチの出力側及び前記フリーホイリング
ダイオードのカソード側と負荷とを接続する第３の導体
とを備え、 前記第２の導体の第１及び第２の経路と前記第３の導体
とを平行に近接して配置したことを特徴とする電力変換
装置。1. A chopper circuit including a self-extinguishing type semiconductor switch and a freewheeling diode, a first conductor connecting a positive side of a DC power supply and an input side of the semiconductor switch, a load and a DC power supply A second path connecting a load to the anode side of the free wheeling diode; a second conductor having a second path connecting the load to the anode side of the free wheeling diode; an output side of the semiconductor switch and the free wheel. A third conductor connecting the cathode side of the ring diode to a load, wherein the first and second paths of the second conductor and the third conductor are arranged in parallel and close to each other. Power converter.
の導体とを平行に近接して配置したことを特徴とする請
求項１に記載の電力変換装置。2. A first path of the second conductor and the first path of the second conductor.
The power converter according to claim 1, wherein the conductors are arranged in parallel and close to each other.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001123522A JP4356263B2 (en) | 2001-04-20 | 2001-04-20 | Power converter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001123522A JP4356263B2 (en) | 2001-04-20 | 2001-04-20 | Power converter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002320381A true JP2002320381A (en) | 2002-10-31 |
| JP4356263B2 JP4356263B2 (en) | 2009-11-04 |
Family
ID=18973063
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001123522A Expired - Lifetime JP4356263B2 (en) | 2001-04-20 | 2001-04-20 | Power converter |
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| Country | Link |
|---|---|
| JP (1) | JP4356263B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007014109A (en) * | 2005-06-30 | 2007-01-18 | Toshiba Mitsubishi-Electric Industrial System Corp | Multi-parallel chopper device |
-
2001
- 2001-04-20 JP JP2001123522A patent/JP4356263B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007014109A (en) * | 2005-06-30 | 2007-01-18 | Toshiba Mitsubishi-Electric Industrial System Corp | Multi-parallel chopper device |
| JP4582645B2 (en) * | 2005-06-30 | 2010-11-17 | 東芝三菱電機産業システム株式会社 | Multi-parallel chopper device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4356263B2 (en) | 2009-11-04 |
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