JP2002319646A - Container for housing electronic component - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a container for housing an electronic component, with which the electronic component is normally and stably operated over long periods of time. SOLUTION: The container for housing the electronic component is composed of an insulation base body 1, having a loading part 1a for loading the electronic component 5 on an upper surface, for which a plurality of external lead terminals 3 connected to the respective electrodes of the electronic component 5 are fixed around the loading part 1a via a joining material 4 composed of crystalline glass, and a lid body 2 for which a sealing material 7 to be softened and fused at a lower temperature compared to the jointing material 4 is put on a lower surface outer peripheral part. By heating and fusing the sealing material 7 and jointing the insulation base body 1 and the lid body 2, the electronic component 5 is housed airtightly in the inside.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electronic component storage container for hermetically sealing and storing electronic components such as a semiconductor element and a piezoelectric vibrator, and more particularly to sealing using glass as a sealing material. And a container for storing electronic components.

[0002]

2. Description of the Related Art Conventionally, an electronic component storage container for storing electronic components such as a semiconductor element and a piezoelectric vibrator usually includes an aluminum oxide-based crystal, an aluminum nitride-based sintered body,
An insulating base made of an electrically insulating material such as a mullite sintered body, having a mounting portion for electronic components at a substantially central portion of the upper surface, and a sealing material made of glass adhered to the upper surface; A lid having a concave portion for forming a space for accommodating an electronic component at a substantially central portion of a lower surface thereof, and a cover member having a lower surface covered with a sealing material made of glass; and an electronic component accommodated therein. And an external lead terminal made of a metal material such as an iron-nickel alloy or an iron-nickel-cobalt alloy for electrically connecting the external lead terminal to an external electric circuit. The external lead terminals are temporarily fixed to the insulating substrate by disposing and melting the sealing material made of glass which has been applied in advance, and then the electronic component such as a semiconductor element is attached to the bottom of the concave portion of the insulating substrate. With electronic components Each electrode is connected to an external lead terminal via a bonding wire, and thereafter, the respective sealing materials having the insulating base and the lid adhered to the opposing main surfaces are melted and integrated, and the insulation is performed. An electronic device as a product is obtained by sealing a container including a base and a lid.

In recent years, with the increase in integration of electronic components such as semiconductor elements, the number of external lead terminals has been increased, and the distance between external lead terminals has been reduced. However, in the above electronic component storage container, when the sealing material is melted and integrated to seal the container including the insulating base and the lid via the sealing material, the sealing material on the insulating base side is melted. Since the mounting position of the external lead terminal on the upper surface of the insulating base fluctuates and the relative positioning of the external lead terminal and the insulating base becomes difficult, sealing is performed as a bonding material for fixing the external lead terminal on the upper surface of the insulating base. A crystalline glass that does not soften and melt due to the heat of is used.

As such a crystalline glass, a glass composed of 61% by weight of lead oxide, 9.3% by weight of zinc oxide, 8.8% by weight of boron oxide, 9.2% by weight of zirconium oxide and 8.4% by weight of silicon oxide is generally used. .

Conventionally, as a sealing material, generally, 56 to 66% by weight of lead oxide, 4 to 14% by weight of boron oxide, and 1 to 14% by weight of silicon oxide
A cordierite compound as a filler is added to a glass component containing 6% by weight and 0.5 to 3% by weight of zinc oxide as a filler.
%, And 10 to 20% by weight of a tin titanate compound has been used.

However, the conventional lead borate-based crystalline glass has a large dielectric constant at 1 MHz of 18 or more, and the capacitance between the external lead terminals increases. The generation of noise has become a problem. In addition, since the above-mentioned sealing material mainly contains lead oxide which is harmful to the human body, it has recently been used as a filler for tin oxide-zinc oxide-phosphoric acid-based glass as a filler having a low thermal expansion coefficient β.
-5 to 10% by weight of eucryptite solid solution, fused quartz, etc.
Those that do not use added lead (lead-free) are being studied.

[0007]

However, a tin oxide-zinc oxide-phosphoric acid based glass having a low thermal expansion coefficient of β-eucryptite solid solution, fused quartz or the like as a filler may be used.
The thermal expansion coefficient of the sealing material to which 10% by weight is added is 8.4 to 9.6.
ppm / ° C., and the coefficient of thermal expansion of a metal material such as an iron-nickel-cobalt alloy forming the external lead terminal (4 pp
m / ° C.), when the external lead terminal is sandwiched between the insulating base and the lid and joined via the sealing material, each heat is generated between the sealing material and the external lead terminal. A stress is generated due to the difference in expansion coefficient, and the stress acts on the sealing material to cause cracks in the sealing material. As a result, the hermetic sealing of the electronic component storage container is easily broken. , The electronic components housed inside are normal for a long time,
In addition, there is a problem that the operation cannot be performed stably.

In order to solve the above problems, a filler such as a β-eucryptite solid solution or fused quartz is added to a tin oxide-zinc oxide-phosphate glass at 50% by weight or more, and the thermal expansion coefficient of the sealing material is increased. May be adjusted to the coefficient of thermal expansion of the external lead terminal.

However, if a filler such as β-eucryptite solid solution or fused quartz is added in an amount of 50% by weight or more to the tin oxide-zinc oxide-phosphate glass, the fluidity of the sealing material is greatly reduced. The reliability of bonding between the insulating base and the lid via the sealing material is reduced, and the hermetic sealing of the electronic component storage container is easily broken, and the electronic components housed therein can be normally and stably maintained for a long time. The problem of being unable to operate is induced.

SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and has as its object to hermetically seal electronic components inside an insulating container comprising an insulating base and a lid, so that the electronic components can be sealed for a long time. An object of the present invention is to provide an electronic component storage container that can be operated normally and stably over a long period of time.

[0011]

An electronic component storage container according to the present invention has a mounting portion on which an electronic component is mounted on an upper surface, and a plurality of electrodes around which the electrodes of the electronic component are connected. An external lead terminal is fixed via a bonding material made of crystalline glass, and a lid body is provided with a sealing material that is softened and melted at a lower temperature than the bonding material on the outer peripheral surface of the lower surface. An electronic component storage container in which an electronic component is hermetically sealed by heat-melting a sealing material and bonding an insulating base and a lid, wherein the bonding material is phosphorus pentoxide 30
-40% by weight, 47-60% by weight of tin monoxide, 1-6% by weight of zinc oxide, 1-4% by weight of aluminum oxide and 1% by weight of silicon oxide
A glass component containing up to 3% by weight of a cordierite-based compound as a filler and 16-45% by weight as a filler, and a sealing material of 35-55% by weight of phosphorus pentoxide, tin monoxide
A cordierite-based compound is added as a filler to a glass component containing 20 to 40% by weight, zinc oxide 10 to 20% by weight, aluminum oxide 2 to 4% by weight, boron oxide 1 to 6% by weight and silicon oxide 1 to 3% by weight. It is characterized by comprising 16-45% by weight in addition.

Further, the electronic component storage container of the present invention has a filler added to the bonding material and the sealing material having an average particle size of 3%.
９9 μm.

According to the electronic component storage container of the present invention, the bonding material contains 30 to 40% by weight of phosphorus pentoxide, 47 to 60% by weight of tin monoxide,
1-6% by weight of zinc oxide, 1-4% by weight of aluminum oxide
And a glass component containing 1 to 3% by weight of silicon oxide, and a cordierite-based compound as a filler is added as a filler to a crystalline glass of 16 to 45% by weight. Is not softened and melted unless the temperature is extremely high, and as a result, even if heat is applied to the bonding material when the sealing material is softened and melted to hermetically seal the insulating base and the lid, the external The lead terminal can always be fixed at a predetermined position.

According to the electronic component storage container of the present invention, the bonding material and the sealing material have a dielectric constant of about 8 at 1 MHz, so that the capacitance between the external lead terminals can be reduced. Thus, malfunction due to noise during operation of the electronic component can be reduced.

Further, according to the electronic component storage container of the present invention, the joining material is composed of 30 to 40% by weight of phosphorus pentoxide and 47 to 60% of tin monoxide.
Wt%, zinc oxide 1-6 wt%, aluminum oxide 1-
A cordierite-based compound as a filler is externally added to a glass component containing 4% by weight and 1 to 3% by weight of silicon oxide.
16 to 45% by weight, and the sealing material is phosphorus pentoxide
35-55 wt%, tin monoxide 20-40 wt%, zinc oxide 10-20
Wt%, aluminum oxide 2-4 wt%, boron oxide 1-
A cordierite compound is added as a filler to a glass component containing 6% by weight and 1 to 3% by weight of silicon oxide by external addition.
4545% by weight, the thermal expansion coefficient of the bonding material and the sealing material becomes 5７7 ppm / ° C. which is close to the thermal expansion coefficient of the external lead terminal. When the insulating base and the cover are joined together with the external lead terminal sandwiched therebetween, no stress is generated between the sealing material and the external lead terminal due to the difference in the coefficient of thermal expansion of each. Thereby, cracks are effectively prevented from being formed in the bonding material, and the electronic components accommodating container can be completely and hermetically sealed, so that the electronic components accommodated therein can operate normally and stably for a long period of time. .

According to the electronic component storage container of the present invention, the cordierite compound as a filler is added in an amount of 35 to 55% by weight of phosphorus pentoxide and 20% by weight of tin monoxide.
-40% by weight, zinc oxide 10-20% by weight, aluminum oxide 2-4% by weight, boron oxide 1-6% by weight and silicon oxide 1
The external additive is added to the glass component containing up to 3% by weight to a small amount of 16-45% by weight, so that the fluidity of the sealing material is not hindered by the added filler and is relatively low at about 430 ° C. Sealing can be performed at a low temperature, and as a result, the bonding reliability between the insulating base and the lid via the bonding material and the sealing material is extremely high, and the electronic component can be hermetically sealed. Can be operated normally and stably for a long period of time.

[0017]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described in detail with reference to the accompanying drawings.

FIG. 1 shows an example of an embodiment in which the container for accommodating an electronic component of the present invention is applied to a package for accommodating a semiconductor element for accommodating a semiconductor element. In this figure, 1
Is an insulating base, 2 is a lid, and 3 is an external lead terminal. The insulating base 1 and the lid 2 constitute a container 6 for housing the semiconductor element 5.

The insulating substrate 1 is made of an electrically insulating material such as an aluminum oxide sintered body or an aluminum nitride sintered body, and has a recess for forming a space for accommodating the semiconductor element 5 at a substantially central portion of the upper surface thereof. 1a is provided, and a semiconductor element 5 is bonded and fixed to the bottom surface of the concave portion 1a via an adhesive made of glass, resin, brazing material, or the like.

When the insulating substrate 1 is made of, for example, an aluminum oxide sintered body, an organic binder, a solvent, a plasticizer, and a dispersant suitable for a raw material powder such as aluminum oxide, silicon oxide, magnesium oxide, and calcium oxide. The mixture is added and mixed to form a slurry, and the slurry is formed into a sheet using a sheet forming method such as a doctor blade method or a calender roll method, which is conventionally known, to obtain a ceramic green sheet (ceramic green sheet). Thereafter, the ceramic green sheets are subjected to appropriate punching, and a plurality of the green sheets are laminated and fired at a high temperature of about 1600 ° C., or a suitable organic solvent or solvent is added to a raw material powder such as aluminum oxide and mixed. The raw material powder is adjusted and the raw material powder is formed into a predetermined shape by press molding. Is fired at a temperature of about 1600 ° C.

One end of an external lead terminal 3 made of a metal material such as an iron-nickel alloy or an iron-nickel-cobalt alloy is fixed to the upper surface of the insulating base 1 via a bonding material 4 made of crystalline glass. I have. The external lead terminal 3 is manufactured by forming an ingot of an iron-nickel alloy or the like into a predetermined plate shape using a conventionally known rolling method and punching method.

The external lead terminal 3 serves to connect the semiconductor element 5 housed therein to a wiring conductor (not shown) of an external electric circuit board, and one end of each of the electrodes of the semiconductor element 5 is provided with a bonding wire 8. The semiconductor element 5 is electrically connected to the external electric circuit by connecting the external lead terminal 3 to the wiring conductor of the external electric circuit board.

The external lead terminal 3 is formed by coating a metal having good conductivity and excellent corrosion resistance made of nickel, gold or the like to a thickness of 1 to 20 μm on its surface by plating. The oxidation corrosion of the terminal 3 can be effectively prevented, and the electrical connection between the external lead terminal 3 and the external electric circuit can be made good. Therefore, external lead terminal 3
It is preferable that a metal such as nickel or gold is applied to the surface thereof by plating to a thickness of 1 to 20 μm.

The bonding material 4 for fixing the lead terminal 3 on the upper surface of the insulating base 1 is composed of 30 to 40% by weight of phosphorus pentoxide and 47 to 60% of tin monoxide.
Wt%, zinc oxide 1-6 wt%, aluminum oxide 1-
A cordierite compound is added as a filler to a glass component containing 4% by weight and 1 to 3% by weight of silicon oxide by external addition.
To about 45% by weight, to which an organic binder, a plasticizer and a solvent are added and mixed to form a glass paste, and the glass paste is printed and coated on the upper surface of the insulating substrate 1 by a conventionally known screen printing method. 420 ° C
After being heated and softened and melted to a certain degree, it is adhered to the upper surface of the insulating base 1 by being cooled and solidified. The external lead terminal 3 is fixed to the insulating base 1 by placing one end of the external lead terminal 3 on a bonding material 4 attached to the upper surface of the insulating base 1.
This is performed by heating to a temperature of about ° C. and heating and melting the bonding material 4 to form a crystalline state.

The insulating base 1 to which the external lead terminals 3 are fixed by the bonding material 4 made of crystalline glass is mounted on the upper surface of the insulating base 1 with a sealing material 7 attached to the lower surface of the lid 2. Then, the semiconductor element 5 is heated and melted at about 430 ° C. to be joined to the lid 2, whereby the semiconductor element 5 is hermetically sealed inside the container 6 including the insulating base 1 and the lid 2.

The lid 2 is made of the same material as the insulating substrate 1, specifically, an electrically insulating material such as an aluminum oxide sintered body or an aluminum nitride sintered body. When it is made of an electrically insulating material such as an aluminum sintered body, it is manufactured by the same method as that for the insulating base 1.

The sealing material 7 attached to the lower surface of the lid 2 is composed of 35 to 55% by weight of phosphorus pentoxide, 20 to 40% by weight of tin monoxide, and zinc oxide.
A cordierite compound is externally added as a filler to a glass component containing 10 to 20% by weight, aluminum oxide 2 to 4% by weight, boron oxide 1 to 6% by weight and silicon oxide 1 to 3% by weight as a filler, and 16 to 45% by weight. An organic binder, a plasticizer, and a solvent are added to and mixed with this to form a glass paste. The glass paste is printed and applied to the lower surface of the lid 2 by a conventionally known screen printing method, and the glass paste is coated with the glass paste. After heating to about 400 ° C to soften and melt, it is applied by cooling and solidifying.

The joining material 4 and the sealing material 7 are made of a cordierite compound as a filler to which 16 to 45% by weight is externally added, and have a thermal expansion coefficient of 5 to 7 ppm / ° C.
Since the thermal expansion coefficient of the external lead terminal 3 is close to that of the external lead terminal 3, the insulating base 1 and the lid 2 are interposed via the bonding material 4 and the sealing material 7.
When joining by sandwiching the external lead terminal 3 between
A large stress does not occur between the bonding material 4 and the sealing material 7 and the external lead terminal 3 due to the difference in their respective thermal expansion coefficients. Is effectively prevented, and the container 6 can be completely and hermetically sealed, and the semiconductor element 5 housed therein can be operated normally and stably for a long period of time.

The amount of the cordierite compound added as a filler is 25 to 35% by weight of phosphorus pentoxide, 40 to 60% of tin monoxide.
Wt%, zinc oxide 1-6 wt%, aluminum oxide 1-
Since the glass composition containing 4% by weight and 1 to 3% by weight of silicon oxide is externally added to a small amount of 16 to 45% by weight, the flowability of the sealing material 7 is not reduced by the added filler. As a result, the joining reliability between the insulating base 1 and the lid 2 via the sealing material 7 is extremely high, and the hermetic sealing of the semiconductor element 5 is ensured.
Can be operated normally and stably for a long period of time.

Further, the bonding material 4 and the sealing material 7 each have a low dielectric constant of about 8 at 1 MHz, so that the capacitance between the external lead terminals 3 can be reduced. A malfunction due to noise can be prevented, and the semiconductor element 5 can be normally and stably operated for a long time.

Since the bonding material 4 and the sealing material 7 do not contain lead, they do not harm the human body and can be used with confidence.

The bonding material 4 is made of a lead-free crystalline glass, and its composition range is determined by experiments of the present inventors to be 30 to 40% by weight of phosphorus pentoxide, 47 to 60% by weight of tin monoxide, Zinc oxide 1-6% by weight, aluminum oxide 1-4
16% by weight of a cordierite-based compound as a filler to a glass component containing 1% by weight and 1 to 3% by weight of silicon oxide.
And the average particle size of the cordierite-based compound filler in the bonding material 4 is 3 to 9 μm.
m.

When glass having the above composition is used as the bonding material 4, if the content of phosphorus pentoxide (P ₂ O ₅ ) is less than 30% by weight, the temperature at which the glass melts and crystallizes increases, and the surface of the external lead terminal 3 becomes high. Of the external lead terminal 3 and the external electric circuit tend to be difficult to achieve.
If it exceeds 10% by weight, the chemical resistance of the bonding material 4 decreases, and the container 6
, The reliability of hermetic sealing tends to be greatly reduced. Thus, phosphorous pentoxide (P ₂ O _5), the amount is specified in the range of 30 to 40 wt%.

The amount of tin monoxide (SnO) is 47
When the content is less than about 10% by weight, the temperature at which the glass melts and crystallizes increases, and the surface of the external lead terminal 3 is oxidized and corroded. If it exceeds 60% by weight, the chemical resistance of the bonding material 4 is reduced, and the reliability of hermetic sealing of the container 6 tends to be greatly reduced. Therefore, tin monoxide (SnO) is specified in the range of 47 to 60% by weight.

Further, when the amount of zinc oxide (ZnO) is less than 1% by weight, the chemical resistance of the bonding material 4 tends to decrease, and the reliability of hermetic sealing of the container 6 tends to greatly decrease.
If it exceeds 6% by weight, the crystallization of the glass tends to proceed too much, and the fluidity tends to decrease, so that the welding of the external lead terminals tends to be difficult. Therefore, the amount of zinc oxide (ZnO) is specified in the range of 1 to 6% by weight.

If the amount of aluminum oxide (Al ₂ O ₃ ) is less than 1% by weight, the moisture resistance of the bonding material 4 tends to decrease, and the reliability of hermetic sealing of the container 6 tends to decrease significantly.
If the content exceeds 4% by weight, the temperature at which the glass melts and crystallizes increases, and oxidative corrosion of the surface of the external lead terminal 3 progresses, so that good electrical connection between the external lead terminal 3 and the external electric circuit tends to be difficult. is there. Therefore, aluminum oxide (Al
₂ O ₃ ) is specified in the range of 1 to 4% by weight.

When the amount of silicon oxide (SiO ₂ ) is less than 1% by weight, the thermal expansion coefficient of the bonding material 4 increases, and the thermal expansion coefficients of the insulating base 1 and the lid 2 and the external lead terminals 3
Is significantly different from the thermal expansion coefficient of the external lead terminal 3 because the reliability of hermetic sealing of the container 6 tends to decrease. Oxidation corrosion of the surface proceeds, and good electrical connection between the external lead terminal 3 and the external electric circuit tends to be difficult. Therefore, the amount of silicon oxide (SiO ₂ ) is 1 to 3
It is specified in the range of weight%.

If the amount of the cordierite-based compound added as a filler is less than 16% by weight, the strength of the glass of the bonding material 4 is reduced, and the reliability of hermetic sealing of the container 6 is greatly reduced. When the content exceeds 45% by weight, the thermal expansion coefficient of the bonding material 4 becomes small, and the thermal expansion coefficients of the insulating base 1 and the lid 2 and the external lead terminal 3 greatly differ from each other. , The reliability of hermetic sealing tends to decrease. Therefore, the cordierite compound is specified in the range of 16 to 45% by weight.

Further, if the cordierite compound added as a filler has an average particle size of less than 3 μm, the fluidity of the joining material 4 decreases, and the container 6
Tends to be difficult to hermetically seal, and if it exceeds 9 μm, the strength of the bonding material 4 tends to decrease, and the reliability of hermetic sealing of the container 6 tends to greatly decrease. Therefore, the cordierite-based compound preferably has an average particle size in the range of 3 to 9 μm.

The sealing material 7 is made of a low-melting glass not containing lead. The composition range of the sealing material 7 was determined by experiments of the present inventors to be 35 to 55% by weight of phosphorus pentoxide, 20 to 40% by weight of tin monoxide, A glass component containing 10 to 20% by weight of zinc oxide, 2 to 4% by weight of aluminum oxide, 1 to 6% by weight of boron oxide, and 1 to 3% by weight of silicon oxide is externally added with a cordierite-based compound as a filler to 16 to 45% by weight. %.

When glass having the above composition is used for the sealing material 7, if the content of phosphorus pentoxide (P ₂ O ₅ ) is less than 35% by weight, the softening and melting temperature of the glass increases, and the sealing material 7 is softened. The heat to be melted tends to cause deterioration of the characteristics of the semiconductor element 5, and if it exceeds 55% by weight, the chemical resistance of the sealing material 7 deteriorates, and the reliability of hermetic sealing of the container 6 increases. It tends to decrease. Thus, phosphorous pentoxide (P ₂ O _5), the amount is specified in the range of 35 to 55 wt%.

The amount of tin monoxide (SnO) is 20
If the amount is less than 10% by weight, the softening and melting temperature of the glass increases,
The heat of softening and melting the sealing material 7 tends to cause deterioration of the characteristics of the semiconductor element 5, and if it exceeds 40% by weight, the chemical resistance of the sealing material 7 is reduced, and the container 6 is hermetically sealed. Tends to be greatly reduced. Therefore, tin monoxide (SnO) is specified in the range of 20 to 40% by weight.

Further, the amount of zinc oxide (ZnO) is
If it is less than 10% by weight, the softening and melting temperature of the glass increases, and the heat of softening and melting the sealing material 7 causes the semiconductor element 5 to melt.
If the content exceeds 20% by weight, the crystallization of the glass proceeds and the fluidity decreases, and it is difficult to hermetically seal the container 6 via the sealing material 7. Tend to be. Therefore, zinc oxide (ZnO) has an amount of 10
It is specified in the range of ~ 20% by weight.

If the amount of aluminum oxide (Al ₂ O ₃ ) is less than 1% by weight, the moisture resistance of the glass decreases, and the reliability of hermetically sealing the container 6 via the sealing material 7 decreases. If the content exceeds 4% by weight, the softening and melting temperature of the glass increases, and the heat of softening and melting the sealing material 7 tends to cause deterioration of the characteristics of the semiconductor element 5. Therefore, the amount of aluminum oxide (Al ₂ O ₃ ) is 1 to 4
It is specified in the range of weight%.

The amount of boron oxide (B ₂ O ₃ ) was 1% by weight.
If the amount is less than the above, crystallization of the sealing material 7 proceeds too much, so that it is difficult to hermetically seal at a low temperature. If the amount exceeds 6% by weight, the chemical resistance of the sealing material 7 is deteriorated and the reliability of the hermetic sealing is reduced. descend. Thus, boron oxide (B ₂ O _3), the amount is specified in the range of 1-6 wt%.

When the amount of silicon oxide (SiO ₂ ) is less than 1% by weight, the thermal expansion coefficient of the sealing material 7 increases, and the thermal expansion coefficients of the insulating base 1 and the lid 2 and the external lead terminals 3
Is significantly different from the thermal expansion coefficient of the container 6, and the reliability of hermetic sealing of the container 6 tends to decrease. If it exceeds 3% by weight, the softening and melting temperature of the glass increases, and the sealing material 7 is softened. The heat to be melted tends to cause deterioration of the characteristics of the semiconductor element 5. Therefore, silicon oxide (SiO ₂ )
Is specified in the range of 1 to 3% by weight.

When the amount of the cordierite-based compound added as a filler is less than 16% by weight, the strength of the glass of the sealing material 7 is reduced, and the reliability of hermetic sealing of the container 6 is greatly reduced. When the content exceeds 45% by weight, the thermal expansion coefficient of the sealing material 7 decreases, and the thermal expansion coefficients of the insulating base 1 and the lid 2 and the thermal expansion coefficient of the external lead terminal 3 greatly differ from each other. The reliability of hermetic sealing of the container 6 tends to be reduced. Therefore, the cordierite compound is specified in the range of 16 to 45% by weight.

Further, if the cordierite compound added as a filler has an average particle size of less than 3 μm, the fluidity of the sealing material 7 decreases, and the
Tends to be difficult to hermetically seal, and if it exceeds 9 μm, the strength of the sealing material 7 tends to decrease, and the reliability of hermetic sealing of the container 6 tends to greatly decrease. Therefore, the cordierite-based compound preferably has an average particle size in the range of 3 to 9 μm.

Thus, according to the package for accommodating the semiconductor element described above, the external lead terminal 3 for electrically connecting the semiconductor element 5 to the external circuit is formed by the bonding material 4 made of crystalline glass.
The semiconductor element 5 is bonded and fixed to the mounting portion 1a of the insulating base 1 fixed by the adhesive via an adhesive such as glass, resin or brazing material, and each electrode of the semiconductor element 5 is connected to the external lead terminal 3 by a bonding wire 8. And then
The semiconductor element 5 is hermetically sealed in the container 6 composed of the insulating base 1 and the lid 2 by sandwiching the external lead terminals 3 between the insulating base 1 and the lid 2 and joining them via the sealing material 7. Thus, a semiconductor device as a product is completed.

It should be noted that the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the spirit of the present invention. Although the aluminum oxide sintered body is exemplified as the material, an aluminum nitride sintered body having a high thermal conductivity is required when heat dissipation of the container is required, and a high speed propagation of an electric signal is required. It is preferable to use a mullite sintered body having a low dielectric constant.

[0051]

According to the electronic component storage container of the present invention,
Filler is added to a glass component containing 30 to 40% by weight of phosphorus pentoxide, 47 to 60% by weight of tin monoxide, 1 to 6% by weight of zinc oxide, 1 to 4% by weight of aluminum oxide, and 1 to 3% by weight of silicon oxide. 16-45 by external addition of cordierite compound as
Once the crystalline material is crystallized, it does not soften and melt once it is crystallized unless it is heated to an extremely high temperature of about 600 ° C. As a result, the sealing material softens and melts, and Even when heat is applied to the bonding material when the base and the lid are hermetically sealed, the external lead terminals can always be fixed at predetermined positions.

Further, according to the electronic component housing of the present invention, the bonding material and the sealing material have a dielectric constant of about 8 at 1 MHz, so that the capacitance between the external lead terminals can be reduced. Thus, malfunction due to noise during operation of the electronic component can be reduced.

Further, according to the electronic component storage container of the present invention, the bonding material is composed of 30 to 40% by weight of phosphorus pentoxide and 47 to 60% of tin monoxide.
Wt%, zinc oxide 1-6 wt%, aluminum oxide 1-
A cordierite-based compound as a filler is externally added to a glass component containing 4% by weight and 1 to 3% by weight of silicon oxide.
16 to 45% by weight, and the sealing material is phosphorus pentoxide
35-55 wt%, tin monoxide 20-40 wt%, zinc oxide 10-20
Wt%, aluminum oxide 2-4 wt%, boron oxide 1-
A cordierite compound is added as a filler to a glass component containing 6% by weight and 1 to 3% by weight of silicon oxide.
4545% by weight, the thermal expansion coefficient of the bonding material and the sealing material is 5-7 ppm / ° C. which is close to the thermal expansion coefficient of the external lead terminal. When the external lead terminal is sandwiched between the insulating base and the lid through the intermediary and joined, no stress is generated between the sealing material and the external lead terminal due to the difference in their respective thermal expansion coefficients. Thereby, cracks are effectively prevented from being formed in the bonding material, and the electronic components accommodating container can be completely and hermetically sealed, so that the electronic components accommodated therein can operate normally and stably for a long period of time. .

According to the electronic component storage container of the present invention, the cordierite compound as a filler is added in an amount of 35 to 55% by weight of phosphorus pentoxide and 20% of tin monoxide in the sealing material.
-40% by weight, zinc oxide 10-20% by weight, aluminum oxide 2-4% by weight, boron oxide 1-6% by weight and silicon oxide 1
The external additive is added to the glass component containing up to 3% by weight to a small amount of 16-45% by weight, so that the fluidity of the sealing material is not hindered by the added filler and is relatively low at about 430 ° C. Sealing can be performed at a low temperature, and as a result, the bonding reliability between the insulating base and the lid via the bonding material and the sealing material is extremely high, and the electronic component can be hermetically sealed. Can be operated normally and stably for a long period of time.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view illustrating an example of an embodiment of an electronic component storage container according to the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Insulating base 1a ... Mounting part 2 ... Lid 3 ... External lead terminal 4 ... Joining material 5 Semiconductor device 6 Container 7 Sealing material

 ──────────────────────────────────────────────────続 き Continued on the front page F-term (reference) 4G062 AA09 BB01 DA03 DB03 DC01 DD05 DE03 DF01 EA01 EA10 EB01 EC01 ED01 EE01 EF01 EG01 FA01 FB01 FC01 FD01 FE04 FE05 FF01 FG01 FH01 FJ01 FK01 FL01 GA01 H0101 HH07 HH09 HH11 HH13 HH15 HH17 HH20 JJ01 JJ03 JJ05 JJ07 JJ10 KK01 KK03 KK05 KK07 KK10 MM23 NN32 PP06

Claims (2)

[Claims] 1. A bonding material having a mounting portion on which an electronic component is mounted on an upper surface, and a plurality of external lead terminals to which each electrode of the electronic component is connected is formed of a crystalline glass around the mounting portion. Insulating base fixed via, and a lid on which a sealing material that softens and melts at a lower temperature than the bonding material is adhered to the lower surface outer peripheral portion, and the sealing material is heated and melted,
An electronic component storage container for hermetically housing the electronic component therein by joining the insulating base and the lid, wherein the joining material is 30 to 40% by weight of phosphorus pentoxide and 47 to 50% of tin monoxide. 60% by weight, zinc oxide 1-6% by weight, aluminum oxide 1-4% by weight and silicon oxide 1-3% by weight
A glass component containing a cordierite-based compound as a filler by 16 to 45% by weight as an external additive, and the sealing material is 35 to 55% by weight of phosphorus pentoxide, 20 to 40% by weight of tin monoxide, A cordierite compound is added as a filler to a glass component containing 10 to 20% by weight of zinc oxide, 2 to 4% by weight of aluminum oxide, 1 to 6% by weight of boron oxide and 1 to 3% by weight of silicon oxide as a filler, and 16 to 45% by weight. %. An electronic component storage container comprising: 2. The electronic component storage container according to claim 1, wherein the filler has an average particle size of 3 to 9 μm.