JP2002305356A5 - - Google Patents

Download PDF

Info

Publication number
JP2002305356A5
JP2002305356A5 JP2001108737A JP2001108737A JP2002305356A5 JP 2002305356 A5 JP2002305356 A5 JP 2002305356A5 JP 2001108737 A JP2001108737 A JP 2001108737A JP 2001108737 A JP2001108737 A JP 2001108737A JP 2002305356 A5 JP2002305356 A5 JP 2002305356A5
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001108737A
Other versions
JP4817522B2 (ja
JP2002305356A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2001108737A priority Critical patent/JP4817522B2/ja
Priority claimed from JP2001108737A external-priority patent/JP4817522B2/ja
Publication of JP2002305356A publication Critical patent/JP2002305356A/ja
Publication of JP2002305356A5 publication Critical patent/JP2002305356A5/ja
Application granted granted Critical
Publication of JP4817522B2 publication Critical patent/JP4817522B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP2001108737A 2001-04-06 2001-04-06 窒化物系半導体層素子および窒化物系半導体の形成方法 Expired - Lifetime JP4817522B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001108737A JP4817522B2 (ja) 2001-04-06 2001-04-06 窒化物系半導体層素子および窒化物系半導体の形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001108737A JP4817522B2 (ja) 2001-04-06 2001-04-06 窒化物系半導体層素子および窒化物系半導体の形成方法

Publications (3)

Publication Number Publication Date
JP2002305356A JP2002305356A (ja) 2002-10-18
JP2002305356A5 true JP2002305356A5 (ja) 2006-09-14
JP4817522B2 JP4817522B2 (ja) 2011-11-16

Family

ID=18960818

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001108737A Expired - Lifetime JP4817522B2 (ja) 2001-04-06 2001-04-06 窒化物系半導体層素子および窒化物系半導体の形成方法

Country Status (1)

Country Link
JP (1) JP4817522B2 (ja)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4767987B2 (ja) * 2002-12-05 2011-09-07 日本碍子株式会社 半導体積層構造及びｉｉｉ族窒化物層群の転位低減方法
JP4748925B2 (ja) * 2003-02-13 2011-08-17 日本碍子株式会社 エピタキシャル基板、半導体積層構造及びｉｉｉ族窒化物層群の転位低減方法
JP2010040867A (ja) * 2008-08-06 2010-02-18 Showa Denko Kk Ｉｉｉ族窒化物半導体積層構造体およびその製造方法
JP4461227B1 (ja) * 2009-03-31 2010-05-12 株式会社 東北テクノアーチ 半導体基板の製造方法
JP4461228B1 (ja) * 2009-03-31 2010-05-12 株式会社 東北テクノアーチ 半導体デバイスの製造方法
CN107210351B (zh) * 2014-12-19 2021-01-08 Glo公司 在背板上制造发光二极管阵列的方法
US10193038B2 (en) 2016-04-04 2019-01-29 Glo Ab Through backplane laser irradiation for die transfer
CN110783177A (zh) * 2019-10-31 2020-02-11 中山大学 一种在蓝宝石模板上生长图形化GaN的方法及一种GaN外延片

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3930161B2 (ja) * 1997-08-29 2007-06-13 株式会社東芝 窒化物系半導体素子、発光素子及びその製造方法
JP4169821B2 (ja) * 1998-02-18 2008-10-22 シャープ株式会社 発光ダイオード
JP2000077336A (ja) * 1998-08-28 2000-03-14 Sony Corp 半導体成長用基板およびその製造方法ならびに半導体装置
JP3372226B2 (ja) * 1999-02-10 2003-01-27 日亜化学工業株式会社 窒化物半導体レーザ素子
JP3587081B2 (ja) * 1999-05-10 2004-11-10 豊田合成株式会社 Ｉｉｉ族窒化物半導体の製造方法及びｉｉｉ族窒化物半導体発光素子
JP3623713B2 (ja) * 2000-03-24 2005-02-23 日本電気株式会社 窒化物半導体発光素子

Similar Documents

Publication Publication Date Title
BE2022C531I2 (ja)
BE2022C502I2 (ja)
BE2022C547I2 (ja)
BE2017C057I2 (ja)
BE2017C051I2 (ja)
BE2017C032I2 (ja)
BE2016C051I2 (ja)
BE2014C052I2 (ja)
BE2014C036I2 (ja)
BE2014C026I2 (ja)
BE2014C004I2 (ja)
BE2014C006I2 (ja)
BE2017C050I2 (ja)
JP2002116261A5 (ja)
BRPI0209186B1 (ja)
JP2001309299A5 (ja)
BE2014C008I2 (ja)
CH1379220H1 (ja)
HU0201310D0 (ja)
BRPI0204884A2 (ja)
BE2016C021I2 (ja)
BE2017C059I2 (ja)
JP2002240658A5 (ja)
BRPI0101486B8 (ja)
BE2012C051I2 (ja)