JP2002305266A - Manufacturing method of semiconductor device - Google Patents

Manufacturing method of semiconductor device

Info

Publication number
JP2002305266A
JP2002305266A JP2001108913A JP2001108913A JP2002305266A JP 2002305266 A JP2002305266 A JP 2002305266A JP 2001108913 A JP2001108913 A JP 2001108913A JP 2001108913 A JP2001108913 A JP 2001108913A JP 2002305266 A JP2002305266 A JP 2002305266A
Authority
JP
Japan
Prior art keywords
semiconductor chip
device region
semiconductor device
device regions
resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001108913A
Other languages
Japanese (ja)
Other versions
JP3854814B2 (en
Inventor
Bunji Kuratomi
文司 倉冨
Kenichi Imura
健一 井村
Fukumi Shimizu
福美 清水
Yoichi Kawada
洋一 河田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Renesas Eastern Japan Semiconductor Inc
Original Assignee
Hitachi Tokyo Electronics Co Ltd
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Tokyo Electronics Co Ltd, Hitachi Ltd filed Critical Hitachi Tokyo Electronics Co Ltd
Priority to JP2001108913A priority Critical patent/JP3854814B2/en
Publication of JP2002305266A publication Critical patent/JP2002305266A/en
Application granted granted Critical
Publication of JP3854814B2 publication Critical patent/JP3854814B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93Batch processes
    • H01L24/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/859Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector involving monitoring, e.g. feedback loop
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93Batch processes
    • H01L2224/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01004Beryllium [Be]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Abstract

PROBLEM TO BE SOLVED: To display a faulty semiconductor device on a package, to remove the faulty semiconductor device before a selection process, and to manufacture a semiconductor device efficiently at a low cost. SOLUTION: An image in a device region 8a on a multiple machining substrate 8 where wire bonding is completed is taken in, and a faulty device region is detected by inspecting the misalignment of a semiconductor chip, the presence or the absence of the semiconductor chip, the improper connection and disconnection of bonding wire, or the like. After that, a batch mold section 9 is formed by collective molding, and a fault mark FM is marked onto the surface of the batch mold section 9, where the detected faulty device region 8a is positioned. Then, a soldering bump is formed in an electrode for connection, that is formed on the back of the multiple machining substrate 8, and the batch mold section 9 is divided into pieces by dicing, thus completing the semiconductor device. The semiconductor device with the faulty mark FM is eliminated in advance, and only a conforming semiconductor device is selected for inspecting.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、半導体装置の製造
技術に関し、特に、一括モールド方式(MAP:Mol
d Array Package)により形成された半
導体装置の選別の高効率化に適用して有効な技術に関す
るものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device manufacturing technique, and more particularly, to a batch molding method (MAP: Mol).
The present invention relates to a technique which is effective when applied to increase the efficiency of sorting of semiconductor devices formed by (d Array Package).

【0002】[0002]

【従来の技術】たとえば、CSP(Chip Size
Package)などの表面実装形パッケージの半導
体装置においては、生産効率を向上して低コスト化を図
る技術として、いわゆる一括モールド方式が知られてい
る。
2. Description of the Related Art For example, CSP (Chip Size)
2. Description of the Related Art In a semiconductor device of a surface mount type package such as a package, a so-called batch molding method is known as a technique for improving production efficiency and reducing cost.

【0003】本発明者が検討したところによれば、一括
モールド方式は、複数のデバイス領域が区画されて連な
って形成された多数個取りのプリント配線基板を用い、
それぞれに半導体チップが搭載された複数のデバイス領
域を一括に覆う状態でモールドによって樹脂封止して一
括封止部を形成する方法である。
According to studies made by the present inventors, the collective molding method uses a multi-cavity printed wiring board formed by connecting a plurality of device regions and forming a plurality of device regions.
This is a method in which a plurality of device regions on each of which a semiconductor chip is mounted are collectively sealed with a resin in a state of covering a plurality of device regions, thereby forming a collectively sealed portion.

【0004】そして、樹脂封止後、はんだバンプなどの
外部端子を形成し、ダイシングを行って多数個取りプリ
ント配線基板および一括封止部をデバイス領域単位に分
割(個片化)し、個々のパッケージを形成する。その
後、個片化された半導体装置は、選別工程において良
品、不良品の判定が行われる。
After resin encapsulation, external terminals such as solder bumps are formed, and dicing is performed to divide the printed wiring board and the encapsulation part into individual device regions (individualization). Form a package. After that, in the sorting process, non-defective products and defective products are determined for the individualized semiconductor devices.

【0005】なお、この種の半導体装置について詳しく
述べてある例としては、特開平12−12745号公報
があり、この文献には、一括モールド方式を用いて組み
立てられる半導体装置について記載されている。
[0005] Japanese Patent Application Laid-Open No. 12-12745 discloses an example of this type of semiconductor device in detail, which describes a semiconductor device assembled using a collective molding method.

【0006】[0006]

【発明が解決しようとする課題】ところが、上記のよう
なMAP方式の半導体装置における製造技術では、次の
ような問題点があることが本発明者により見い出され
た。
However, it has been found by the present inventor that the following problems are encountered in the manufacturing technology of the MAP type semiconductor device as described above.

【0007】すなわち、一括して樹脂封止を行った後で
は、半導体チップが搭載されていない不良デバイス領域
の半導体装置が不明となってしまうので、選別工程にお
いては、すべての半導体装置の選別が行われることにな
り、この選別工程にかかる時間が長くなってしまい、半
導体装置の製造効率が低くなってしまうという問題があ
る。
That is, since semiconductor devices in a defective device area where no semiconductor chip is mounted become unclear after resin sealing is performed collectively, all the semiconductor devices are sorted in the sorting step. Therefore, there is a problem that the time required for the sorting step is increased, and the manufacturing efficiency of the semiconductor device is reduced.

【0008】また、半導体チップが搭載されていない不
良の半導体装置にも、はんだバンプが形成されるので、
はんだバンプが無駄となり、製品コストが上がってしま
うという問題もある。
Further, solder bumps are also formed on a defective semiconductor device on which no semiconductor chip is mounted.
There is also a problem that the solder bumps are wasted and the product cost increases.

【0009】本発明の目的は、一括モールド後に不良の
半導体装置をパッケージに表示し、選別工程前に該不良
の半導体装置を取り除くことによって、半導体装置の選
別を高効率化し、かつ低コスト化することのできる半導
体装置の製造方法を提供することにある。
SUMMARY OF THE INVENTION It is an object of the present invention to display a defective semiconductor device on a package after collective molding and remove the defective semiconductor device before a selection step, thereby improving the efficiency and cost of selecting the semiconductor device. It is an object of the present invention to provide a method of manufacturing a semiconductor device that can be used.

【0010】本発明の前記ならびにその他の目的と新規
な特徴は、本明細書の記述および添付図面から明らかに
なるであろう。
The above and other objects and novel features of the present invention will become apparent from the description of the present specification and the accompanying drawings.

【0011】[0011]

【課題を解決するための手段】本願において開示される
発明のうち、代表的なものの概要を簡単に説明すれば、
以下のとおりである。
SUMMARY OF THE INVENTION Among the inventions disclosed in the present application, the outline of a representative one will be briefly described.
It is as follows.

【0012】すなわち、本発明の半導体装置の製造方法
は、複数のデバイス領域を有する多数個取り基板と該複
数のデバイス領域に搭載する半導体チップとを準備する
工程と、デバイス領域に半導体チップを搭載する工程
と、半導体チップの表面電極とこれに対応するデバイス
領域のボンディング電極とを接続部材によって接続する
工程と、デバイス領域の不良を検出する工程と、多数個
取り基板における複数のデバイス領域をモールド樹脂に
よって一括に覆い、半導体チップを樹脂封止するととも
に一括封止部を形成する工程と、不良が検出されたデバ
イス領域の一括封止部表面に不良マークをマーキングす
る工程と、ダイシングラインに沿ってデバイス領域毎に
多数個取り基板および一括封止部を分割して個片化し、
個々の封止部を形成する工程とを有するものである。
That is, in the method of manufacturing a semiconductor device according to the present invention, a step of preparing a multi-piece substrate having a plurality of device regions and a semiconductor chip to be mounted on the plurality of device regions is provided. A step of connecting a surface electrode of a semiconductor chip to a bonding electrode of a corresponding device region by a connecting member; a step of detecting a defect in the device region; and a process of molding a plurality of device regions in a multi-cavity substrate. Collectively covering with a resin, sealing the semiconductor chip with the resin and forming a collectively sealed portion, marking a defect mark on the surface of the collectively sealed portion of the device region where a defect is detected, along a dicing line, To divide the multi-cavity substrate and batch sealing part into individual devices for each device area,
Forming individual sealing portions.

【0013】また、本発明の半導体装置の製造方法は、
複数のデバイス領域を有する多数個取り基板と該複数の
デバイス領域に搭載する半導体チップとを準備する工程
と、デバイス領域に半導体チップを搭載する工程と、半
導体チップの表面電極とこれに対応するデバイス領域の
ボンディング電極とを接続部材によって接続する工程
と、デバイス領域に搭載された半導体チップの位置ず
れ、デバイス領域における半導体チップの有無、接続部
材の接続不良、あるいは接続部材の断線などを検査し、
不良を検出する工程と、多数個取り基板における複数の
デバイス領域をモールド樹脂によって一括に覆い、半導
体チップを樹脂封止するとともに一括封止部を形成する
工程と、不良が検出されたデバイス領域の一括封止部表
面に不良マークをマーキングする工程と、ダイシングラ
インに沿ってデバイス領域毎に多数個取り基板および一
括封止部を分割して個片化し、個々の封止部を形成する
工程とを有するものである。
Further, a method of manufacturing a semiconductor device according to the present invention
A step of preparing a multi-piece substrate having a plurality of device regions and a semiconductor chip mounted in the plurality of device regions; a step of mounting the semiconductor chip in the device regions; a surface electrode of the semiconductor chip and a device corresponding thereto A step of connecting the bonding electrode in the region with the connection member, and inspecting the position shift of the semiconductor chip mounted in the device region, the presence or absence of the semiconductor chip in the device region, poor connection of the connection member, or disconnection of the connection member,
A step of detecting a defect, a step of collectively covering a plurality of device regions on the multi-piece substrate with a mold resin, sealing the semiconductor chip with a resin, and forming a collectively sealed portion, and a step of detecting the defect in the device region. A step of marking a defect mark on the surface of the collectively sealed portion, a step of dividing the multi-cavity substrate and the collectively sealed portion for each device region along the dicing line into individual pieces, and forming individual sealed portions. It has.

【0014】さらに、本発明の半導体装置の製造方法
は、複数のデバイス領域を有する多数個取り基板と該複
数のデバイス領域に搭載する半導体チップとを準備する
工程と、デバイス領域に半導体チップを搭載する工程
と、半導体チップの表面電極とこれに対応するデバイス
領域のボンディング電極とを接続部材によって接続する
工程と、複数のデバイス領域の画像をそれぞれ取り込
み、取り込んだ画像から個々のデバイス領域に搭載され
た半導体チップの位置ずれ、デバイス領域における半導
体チップの有無、接続部材の接続不良、あるいは接続部
材の断線などを検査し、不良を検出する工程と、多数個
取り基板における複数のデバイス領域をモールド樹脂に
よって一括に覆い、半導体チップを樹脂封止するととも
に一括封止部を形成する工程と、不良が検出されたデバ
イス領域の一括封止部表面に不良マークをマーキングす
る工程と、ダイシングラインに沿ってデバイス領域毎に
多数個取り基板および一括封止部を分割して個片化し、
個々の封止部を形成する工程とを有するものである。
Further, according to the method of manufacturing a semiconductor device of the present invention, a step of preparing a multi-piece substrate having a plurality of device regions and a semiconductor chip to be mounted on the plurality of device regions is provided. And connecting the front surface electrode of the semiconductor chip and the bonding electrode of the corresponding device region by a connecting member, capturing images of a plurality of device regions, and mounting the images on the individual device regions from the captured images. Inspection of semiconductor chip misalignment, presence / absence of semiconductor chip in device area, connection failure of connection member, disconnection of connection member, etc. to detect failure, and molding of multiple device areas on multi-cavity substrate with mold resin And collectively seal the semiconductor chip with resin and form a collectively sealed part The process of marking a defect mark on the surface of the collectively sealed portion of the device region where the defect is detected, and dividing the multi-cavity substrate and the collectively sealed portion for each device region along the dicing line into individual pieces. ,
Forming individual sealing portions.

【0015】また、本発明の半導体装置の製造方法は、
複数のデバイス領域を有する多数個取り基板と該複数の
デバイス領域に搭載する半導体チップとを準備する工程
と、デバイス領域に半導体チップを搭載する工程と、半
導体チップの表面電極とこれに対応するデバイス領域の
ボンディング電極とを接続部材によって接続する工程
と、複数のデバイス領域の画像をそれぞれ取り込み、取
り込んだ画像から個々のデバイス領域に搭載された半導
体チップの位置ずれ、デバイス領域における半導体チッ
プの有無、接続部材の接続不良、あるいは前記接続部材
の断線などを検査し、不良を検出する工程と、多数個取
り基板における複数のデバイス領域をモールド樹脂によ
って一括に覆い、半導体チップを樹脂封止するとともに
一括封止部を形成する工程と、不良が検出されたデバイ
ス領域の一括封止部表面をレーザ照射による削除、印
刷、またはインク塗布により不良マークをマーキングす
る工程と、ダイシングラインに沿ってデバイス領域毎に
多数個取り基板および一括封止部を分割して個片化し、
個々の封止部を形成する工程とを有するものである。
Further, a method of manufacturing a semiconductor device according to the present invention
A step of preparing a multi-piece substrate having a plurality of device areas and a semiconductor chip mounted on the plurality of device areas; a step of mounting the semiconductor chip on the device areas; a surface electrode of the semiconductor chip and a device corresponding thereto A step of connecting the bonding electrodes in the region with the connection member, capturing images of the plurality of device regions, respectively, displacing the semiconductor chips mounted on the individual device regions from the captured images, the presence or absence of the semiconductor chip in the device region, Inspect the connection failure of the connection member, or the disconnection of the connection member, etc., and detect the failure, collectively cover a plurality of device regions on the multi-piece substrate with the mold resin, seal the semiconductor chip with the resin, and collectively Step of forming a sealing portion, and a batch sealing portion of a device region where a defect is detected Remove a surface by laser irradiation, a step of marking the bad marks by printing, or ink coating, singulated by dividing the multi-chip substrate and block molding unit for each device region along the dicing line,
Forming individual sealing portions.

【0016】以上のことにより、不良マークを一括封止
部表面にマーキングすることにより、不良の半導体装置
を選別工程前に予め取り除くことができるので、選別時
間を短縮することができ、半導体装置の製造コストを小
さくすることができる。
As described above, by marking the defective mark on the surface of the encapsulation portion, the defective semiconductor device can be removed in advance before the selection step, so that the selection time can be shortened and the semiconductor device can be shortened. Manufacturing cost can be reduced.

【0017】[0017]

【発明の実施の形態】以下、本発明の実施の形態を図面
に基づいて詳細に説明する。
Embodiments of the present invention will be described below in detail with reference to the drawings.

【0018】図1は、本発明の一実施の形態による半導
体装置の断面図、図2は、図1の半導体装置における外
観斜視図、図3〜図9は、図1の半導体装置における製
造工程の説明図、図10は、図1の半導体装置を樹脂封
止するモールド装置の説明図、図11は、図1の半導体
装置における製造工程のフローチャートである。
FIG. 1 is a sectional view of a semiconductor device according to an embodiment of the present invention, FIG. 2 is an external perspective view of the semiconductor device of FIG. 1, and FIGS. 3 to 9 are manufacturing steps of the semiconductor device of FIG. 10, FIG. 10 is an explanatory view of a molding device for resin-sealing the semiconductor device of FIG. 1, and FIG. 11 is a flowchart of a manufacturing process in the semiconductor device of FIG.

【0019】本実施の形態において、半導体装置1は、
表面実装形パッケージの1つであるBGAからなり、M
AP方式によって形成されている。この半導体装置1
は、図1、図2に示すように、たとえば、ガラスエポキ
シ樹脂などからなるプリント配線基板2が設けられてい
る。ここで、プリント配線基板2はプリント基板以外で
もよく、たとえば、ポリイミドなどのテープ基板を用い
て構成するようにしてよい。
In the present embodiment, the semiconductor device 1
Made of BGA, one of the surface mount type packages,
It is formed by the AP method. This semiconductor device 1
As shown in FIG. 1 and FIG. 2, a printed wiring board 2 made of, for example, glass epoxy resin is provided. Here, the printed wiring board 2 may be other than a printed board, and may be configured using, for example, a tape board made of polyimide or the like.

【0020】このプリント配線基板2の裏面には、アレ
イ状に並べられた接続用電極、および配線パターンが形
成されている。プリント配線基板2の主面(半導体チッ
プ搭載面)中央部には、絶縁樹脂などの接着材3を介し
て半導体チップ4が搭載されている。
On the back surface of the printed wiring board 2, connection electrodes and wiring patterns arranged in an array are formed. A semiconductor chip 4 is mounted at the center of the main surface (semiconductor chip mounting surface) of the printed wiring board 2 via an adhesive 3 such as an insulating resin.

【0021】プリント配線基板2の主面において、半導
体チップ4の対向する2辺の周辺部近傍には、ボンディ
ング電極2a、ならびに配線パターンが形成されてい
る。ボンディング電極2aと接続用電極とは、プリント
配線基板の両面に形成された配線パターン、ならびにス
ルーホールなどによって電気的に接続されている。
On the main surface of the printed wiring board 2, a bonding electrode 2a and a wiring pattern are formed near the periphery of two opposing sides of the semiconductor chip 4. The bonding electrode 2a and the connection electrode are electrically connected by wiring patterns formed on both surfaces of the printed wiring board, through holes, and the like.

【0022】プリント配線基板2裏面の接続用電極に
は、球形のはんだからなるはんだバンプ5がそれぞれ形
成されている。半導体チップ4の主面には、該半導体チ
ップ4の外周部近傍に複数の電極(表面電極)4aが形
成されている。これら電極4aは、ボンディングワイヤ
(接続部材)6を介して所定のボンディング電極2aが
それぞれ接続されている。
Solder bumps 5 made of spherical solder are formed on the connection electrodes on the back surface of the printed wiring board 2 respectively. On the main surface of the semiconductor chip 4, a plurality of electrodes (surface electrodes) 4a are formed near the outer peripheral portion of the semiconductor chip 4. These electrodes 4a are connected to predetermined bonding electrodes 2a via bonding wires (connection members) 6, respectively.

【0023】そして、これら半導体チップ4、プリント
配線基板2のボンディング電極2a周辺、ならびにボン
ディングワイヤ6が、封止樹脂7によって封止されてパ
ッケージが形成されている。
The semiconductor chip 4, the periphery of the bonding electrode 2a of the printed wiring board 2, and the bonding wires 6 are sealed with a sealing resin 7 to form a package.

【0024】さらに、半導体装置1を電子部品などを実
装するプリント実装基板に実装する際には、該プリント
実装基板に形成されたランドなどの電極に、はんだバン
プ5を重合させて搭載し、リフローを行うことにより電
気的に接続する。
Further, when the semiconductor device 1 is mounted on a printed circuit board on which electronic components and the like are mounted, solder bumps 5 are superimposed on electrodes such as lands formed on the printed circuit board and mounted on the printed circuit board. The connection is made electrically.

【0025】次に、本実施の形態における半導体装置1
の製造工程について、図1、図2、および図3〜図9の
製造工程の説明図、図10のモールド装置の説明図、お
よび図11のフローチャートを用いて説明する。
Next, the semiconductor device 1 in the present embodiment
1 will be described with reference to FIGS. 1, 2, and 3 to 9, a description of the molding apparatus of FIG. 10, and a flowchart of FIG. 11.

【0026】まず、多数個取り基板8、および該多数個
取り基板8に搭載される半導体チップ4を準備する(ス
テップS101)。この多数個取り基板8には、図3に
示すように、複数のマトリクス配置されたデバイス領域
8aと、これらデバイス領域を隔てるダイシングライン
8bとが形成されており、該複数のデバイス領域8aを
一括に覆う状態で樹脂モールドされる一括モールドが施
される。
First, the multi-piece board 8 and the semiconductor chip 4 mounted on the multi-piece board 8 are prepared (step S101). As shown in FIG. 3, a plurality of device regions 8a arranged in a matrix and dicing lines 8b separating these device regions are formed on the multi-piece substrate 8, and the plurality of device regions 8a are collectively formed. A batch molding is performed in a state of being covered with the resin.

【0027】また、半導体装置1は、この一括モールド
によって形成された一括モールド部をダイシングして個
片化したものである。ダイシングライン8bは、対にな
るデバイス領域8a部分、ならびに多数個取り基板8と
デバイス領域8a部分とを切り離す領域である。
The semiconductor device 1 is obtained by dicing the collectively molded portion formed by the collective molding into individual pieces. The dicing line 8b is a region that separates the device region 8a to be paired and the multi-cavity substrate 8 from the device region 8a.

【0028】このデバイス領域8aには、前述したボン
ディング電極2a、配線パターン、スルーホール、およ
び接続用電極などがそれぞれ成形されており、ダイシン
グして個片化された後、前述したプリント配線基板2
(図1)となる。
In the device region 8a, the bonding electrodes 2a, wiring patterns, through holes, connection electrodes, and the like described above are formed, and after being diced into individual pieces, the above-described printed wiring board 2 is formed.
(FIG. 1).

【0029】そして、多数個取り基板8の半導体チップ
4搭載面に接着材3をそれぞれ塗布し、図4に示すよう
に、半導体チップ4を搭載して接着固定する(ステップ
S102)。
Then, the adhesive 3 is applied to the surface of the multi-piece substrate 8 on which the semiconductor chip 4 is mounted, and the semiconductor chip 4 is mounted and bonded and fixed as shown in FIG. 4 (step S102).

【0030】その後、図5に示すように半導体チップ4
の電極4aと多数個取り基板8に形成されたボンディン
グ電極2aとをボンディングワイヤ6によってそれぞれ
接合し、電気的に接続する(ステップS103)。この
ワイヤボンディング後、モールド装置Mによって一括モ
ールドを行う。
Thereafter, as shown in FIG.
The electrode 4a is bonded to the bonding electrode 2a formed on the multi-piece substrate 8 by the bonding wire 6, and is electrically connected (Step S103). After this wire bonding, collective molding is performed by the molding apparatus M.

【0031】ここで、モールド装置Mについて説明す
る。
Here, the molding apparatus M will be described.

【0032】モールド装置Mは、図10に示すように、
ローダM1、画像認識手段M2、モールドプレスM3,
M4、マーキング手段M5、ならびにアンローダM6な
どから構成されている。
As shown in FIG. 10, the molding apparatus M
Loader M1, image recognition means M2, mold press M3
M4, marking means M5, unloader M6 and the like.

【0033】ローダM1は、一括モールドされる多数個
取り基板8が格納される。画像認識手段M2には、個々
のデバイス領域8aにおける画像を取り込むカメラ、お
よび該カメラが取り込んだ画像から、良品、不良品の検
査を行う不良検出部が備えられており、半導体チップ4
の位置ずれ、ボンディング不良やボンディングワイヤの
断線などの不良、および半導体チップ4が搭載されてい
ないデバイス領域8aなどの不良を検出する。
The loader M1 stores a multi-piece substrate 8 to be collectively molded. The image recognizing means M2 includes a camera for capturing an image in each device area 8a, and a defect detection unit for inspecting non-defective products and defective products from the image captured by the camera.
, A defect such as a bonding defect or a broken bonding wire, and a defect such as the device region 8a where the semiconductor chip 4 is not mounted.

【0034】モールドプレスM3,M4は、加熱可塑さ
せた成形材料を金型キャビティ内に圧入し、熱と圧力と
で成形硬化させ、デバイス領域8aの不良検出後の多数
個取り基板8における一括モールドを行い、一括モール
ド部9を形成する。
The mold presses M3 and M4 press the heat-plasticized molding material into the mold cavity and mold and harden it with heat and pressure, and collectively mold the multi-piece substrate 8 after detecting a defect in the device area 8a. Is carried out to form the collective molding section 9.

【0035】マーキング手段M5は、一括モールド部9
における画像認識手段M2が検出した不良のデバイス領
域8aに不良マークFMをマーキングする。アンローダ
M6は、マーキング手段M5によって不良のデバイス領
域8aに不良マークFMがマーキングされた多数個取り
基板8が収納される。
The marking means M5 includes the collective molding section 9
The defective mark FM is marked on the defective device area 8a detected by the image recognizing means M2. In the unloader M6, the multi-piece substrate 8 in which the defective mark FM is marked on the defective device area 8a by the marking means M5 is stored.

【0036】そして、ステップS103の処理が終了し
た多数個取り基板8は、モールド装置Mの画像認識手段
M2によって、不良のデバイス領域が検出される(ステ
ップS104)。その後、モールドプレスM3,M4に
よって一括モールドを行い(ステップS105)、図6
に示すように、半導体チップ4とボンディングワイヤ6
とを封止樹脂7によって封止し、一括モールド部9を形
成する。なお、モールド樹脂としては、たとえば、エポ
キシ系の熱硬化性樹脂などを用いる。
Then, the defective device area is detected by the image recognizing means M2 of the molding apparatus M on the multi-piece substrate 8 after the processing of step S103 is completed (step S104). Thereafter, collective molding is performed by the mold presses M3 and M4 (step S105), and FIG.
As shown in FIG.
Are sealed with a sealing resin 7 to form a collective molded portion 9. As the mold resin, for example, an epoxy-based thermosetting resin is used.

【0037】一括モールド部9が形成された多数個取り
基板8は、マーキング手段M5によって、図7に示すよ
うに、画像認識手段M2が検出した不良のデバイス領域
8aが位置する一括モールド部9の表面に四角形状の不
良マークFMをマーキングし(ステップS106)、ア
ンローダM6に格納される。
As shown in FIG. 7, the multi-piece substrate 8 on which the collective molding section 9 is formed is moved by the marking means M5 to the position of the collective molding section 9 where the defective device region 8a detected by the image recognition means M2 is located. A square defect mark FM is marked on the surface (step S106) and stored in the unloader M6.

【0038】この場合、不良マークFMは、不良の半導
体装置と認識されれば、四角形以外の多角形や円形な
ど、どのような形状でもよく、マーキングの方法として
は、たとえば、印刷、インクの塗布、あるいはレーザ照
射によるマーキングなどがある。
In this case, if the defective mark FM is recognized as a defective semiconductor device, the defective mark FM may have any shape such as a polygon other than a quadrangle or a circle. Or marking by laser irradiation.

【0039】その後、図8に示すように、多数個取り基
板8の裏面に形成されている接続用電極に、はんだバン
プ5をそれぞれ形成する(ステップS107)。はんだ
バンプ5は、たとえば、多数個取り基板8の半導体チッ
プ4搭載面を下方に向け、複数のはんだバンプ5を真空
吸着保持したボール搭載用治具をその上方に配置し、多
数個取り基板8の上方から各デバイス領域8a上の接続
用電極に搭載して形成する。
Thereafter, as shown in FIG. 8, the solder bumps 5 are respectively formed on the connection electrodes formed on the back surface of the multi-piece substrate 8 (Step S107). The solder bumps 5 may be arranged, for example, such that the semiconductor chip 4 mounting surface of the multi-piece board 8 faces downward, and a ball mounting jig holding the plurality of solder bumps 5 by vacuum suction is arranged above the solder bumps 5. From above, mounted on connection electrodes on each device region 8a.

【0040】そして、一括モールド部9が形成された
後、図9に示すように、ダイシング用の切断刃であるブ
レードBを用いたダイシングによって該一括モールド部
9を分割して個片化し(ステップS108)、個々のパ
ッケージ(封止部)を形成することによって、図1、図
2に示す半導体装置1が完成する(ステップS10
9)。
After the collective mold portion 9 is formed, as shown in FIG. 9, the collective mold portion 9 is divided into individual pieces by dicing using a blade B, which is a cutting blade for dicing, to form individual pieces (step). S108), and by forming individual packages (sealing portions), the semiconductor device 1 shown in FIGS. 1 and 2 is completed (step S10).
9).

【0041】また、これら個片化されたパッケージのう
ち、マーキング手段M5によって不良マークFMがマー
キングされたパッケージは不良品であるので予め除去さ
れることになる。その後、不良マークFMが表示されて
いない完成した半導体装置1は、選別工程によって選別
が実施される。
[0041] Of these individualized packages, the package marked with the defective mark FM by the marking means M5 is a defective product and is therefore removed in advance. After that, the completed semiconductor device 1 on which the defect mark FM is not displayed is sorted by a sorting process.

【0042】それにより、本実施の形態によれば、不良
マークFMをパッケージ表面に表示することにより、選
別工程前に不良の半導体装置を予め取り除くことができ
るので、選別時間を短縮することができるとともに、半
導体装置1の製造コストを小さくすることができる。
Thus, according to the present embodiment, by displaying the defective mark FM on the package surface, the defective semiconductor device can be removed in advance before the selection step, so that the selection time can be reduced. At the same time, the manufacturing cost of the semiconductor device 1 can be reduced.

【0043】以上、本発明者によってなされた発明を発
明の実施の形態に基づき具体的に説明したが、本発明は
前記実施の形態に限定されるものではなく、その要旨を
逸脱しない範囲で種々変更可能であることはいうまでも
ない。
Although the invention made by the inventor has been specifically described based on the embodiments of the present invention, the present invention is not limited to the above embodiments, and various modifications may be made without departing from the gist of the invention. Needless to say, it can be changed.

【0044】たとえば、前記実施の形態では、多数個取
り基板の裏面に、はんだバンプをそれぞれ形成した後、
ダイシングによって一括モールド部を個片化する製造工
程としたが、一括モールド部の形成後にダイシングを行
い、不良マークがマーキングされた半導体装置を取り除
いた後、良品の半導体装置にのみはんだバンプを形成す
るようにしてもよい。
For example, in the above embodiment, after forming solder bumps on the back surface of the multi-piece substrate, respectively,
Although the manufacturing process was performed in which the collectively molded portion was separated into individual pieces by dicing, dicing was performed after the formation of the collectively molded portion, and after removing the semiconductor device on which the defective mark was marked, solder bumps were formed only on non-defective semiconductor devices. You may do so.

【0045】これによって、不良の半導体装置にはんだ
バンプが形成されることを防止することができ、材料費
などのコストを削減することができる。
As a result, formation of solder bumps on a defective semiconductor device can be prevented, and costs such as material costs can be reduced.

【0046】また、前記実施の形態においては、一括モ
ールド方式によって製造される半導体装置について記載
したが、たとえば、リードフレーム1ピッチあたり縦ま
たは縦横に複数個分のアイランド、リードなどをマトリ
クス状に配置したリードフレーム、いわゆるマトリクス
フレームを用いた半導体装置の製造工程などに適用する
ことによっても、該半導体装置の製造効率を向上するこ
とができる。
In the above embodiment, the semiconductor device manufactured by the batch molding method has been described. For example, a plurality of islands, leads and the like are arranged in a matrix vertically or horizontally per pitch of a lead frame. The manufacturing efficiency of the semiconductor device can also be improved by applying the method to a manufacturing process of a semiconductor device using a lead frame, which is a so-called matrix frame.

【0047】[0047]

【発明の効果】本願によって開示される発明のうち、代
表的なものによって得られる効果を簡単に説明すれば、
以下のとおりである。
Advantageous effects obtained by typical ones of the inventions disclosed by the present application will be briefly described as follows.
It is as follows.

【0048】(1)不良の半導体装置を予め取り除くこ
とができるので、選別工程における半導体装置の全数検
査を不要にすることができ、選別検査にかかる時間を大
幅に短縮することができる。
(1) Since defective semiconductor devices can be removed in advance, it is not necessary to perform a 100% inspection of the semiconductor devices in the selection process, and the time required for the selection inspection can be greatly reduced.

【0049】(2)上記(1)により、半導体装置の製
造効率を上げるとともに、製造コストを小さくすること
ができる。
(2) According to the above (1), the manufacturing efficiency of the semiconductor device can be increased and the manufacturing cost can be reduced.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の一実施の形態による半導体装置の断面
図である。
FIG. 1 is a sectional view of a semiconductor device according to an embodiment of the present invention.

【図2】図1の半導体装置における外観斜視図である。FIG. 2 is an external perspective view of the semiconductor device of FIG. 1;

【図3】図1の半導体装置における製造工程の説明図で
ある。
FIG. 3 is an explanatory diagram of a manufacturing process in the semiconductor device of FIG. 1;

【図4】図3に続く半導体装置の製造工程の説明図であ
る。
FIG. 4 is an explanatory view of the semiconductor device manufacturing process following FIG. 3;

【図5】図4に続く半導体装置の製造工程の説明図であ
る。
FIG. 5 is an explanatory view of the semiconductor device manufacturing process following FIG. 4;

【図6】図5に続く半導体装置の製造工程の説明図であ
る。
FIG. 6 is an explanatory view of the manufacturing process of the semiconductor device, following FIG. 5;

【図7】図6に続く半導体装置の製造工程の説明図であ
る。
FIG. 7 is an explanatory view of the semiconductor device manufacturing process following FIG. 6;

【図8】図7に続く半導体装置の製造工程の説明図であ
る。
FIG. 8 is an explanatory view of the manufacturing process of the semiconductor device, following FIG. 7;

【図9】図8に続く半導体装置の製造工程の説明図であ
る。
FIG. 9 is an explanatory view of the semiconductor device manufacturing process following FIG. 8;

【図10】図1の半導体装置を樹脂封止するモールド装
置の説明図である。
FIG. 10 is an explanatory diagram of a molding device for resin-sealing the semiconductor device of FIG. 1;

【図11】図1の半導体装置における製造工程のフロー
チャートである。
FIG. 11 is a flowchart of a manufacturing process in the semiconductor device of FIG. 1;

【符号の説明】[Explanation of symbols]

1 半導体装置 2 プリント配線基板 2a ボンディング電極 3 接着材 4 半導体チップ 4a 電極(表面電極) 5 はんだバンプ 6 ボンディングワイヤ(接続部材) 7 封止樹脂 8 多数個取り基板 8a デバイス領域 8b ダイシングライン 9 一括モールド部 M モールド装置 M1 ローダ M2 画像認識手段 M3,M4 モールドプレス M5 マーキング手段 M6 アンローダ FM 不良マーク DESCRIPTION OF SYMBOLS 1 Semiconductor device 2 Printed wiring board 2a Bonding electrode 3 Adhesive material 4 Semiconductor chip 4a Electrode (surface electrode) 5 Solder bump 6 Bonding wire (connection member) 7 Sealing resin 8 Multi-piece substrate 8a Device area 8b Dicing line 9 Batch molding Part M Molding device M1 Loader M2 Image recognition means M3, M4 Mold press M5 Marking means M6 Unloader FM Failure mark

───────────────────────────────────────────────────── フロントページの続き (72)発明者 井村 健一 東京都小平市上水本町五丁目20番1号 株 式会社日立製作所半導体グループ内 (72)発明者 清水 福美 東京都青梅市藤橋3丁目3番地2 日立東 京エレクトロニクス株式会社内 (72)発明者 河田 洋一 東京都小平市上水本町五丁目20番1号 株 式会社日立製作所半導体グループ内 Fターム(参考) 4M109 AA01 BA03 CA21 DA09 DB17 GA06  ──────────────────────────────────────────────────の Continuing on the front page (72) Inventor Kenichi Imura 5-20-1, Josuihoncho, Kodaira-shi, Tokyo Within the Semiconductor Group, Hitachi, Ltd. (72) Inventor Fukumi Shimizu 3-chome, Fujibashi, Ome-shi, Tokyo No. 2 Hitachi Tokyo Electronics Co., Ltd. (72) Inventor Yoichi Kawata 5-2-1, Kamimizuhonmachi, Kodaira-shi, Tokyo F-term in the Semiconductor Group, Hitachi, Ltd. F-term (reference) 4M109 AA01 BA03 CA21 DA09 DB17 GA06

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 複数のデバイス領域を有する多数個取り
基板と前記複数のデバイス領域に搭載する半導体チップ
とを準備する工程と、 前記デバイス領域に前記半導体チップを搭載する工程
と、 前記半導体チップの表面電極とこれに対応する前記デバ
イス領域のボンディング電極とを接続部材によって接続
する工程と、 前記デバイス領域の不良を検出する工程と、 前記多数個取り基板における複数のデバイス領域をモー
ルド樹脂によって一括に覆い、前記半導体チップを樹脂
封止するとともに一括封止部を形成する工程と、 前記不良が検出されたデバイス領域の一括封止部表面に
不良マークをマーキングする工程と、 ダイシングラインに沿って前記デバイス領域毎に前記多
数個取り基板および前記一括封止部を分割して個片化
し、個々の封止部を形成する工程とを有することを特徴
とする半導体装置の製造方法。
A step of preparing a multi-piece substrate having a plurality of device regions and a semiconductor chip mounted on the plurality of device regions; a step of mounting the semiconductor chip on the device regions; A step of connecting a surface electrode and a bonding electrode of the device region corresponding to the surface electrode by a connection member; a step of detecting a defect in the device region; and a plurality of device regions in the multi-piece substrate are collectively formed by molding resin. Covering, sealing the semiconductor chip with a resin, and forming a collective sealing portion; marking a defect mark on a surface of the collective sealing portion in the device region where the defect is detected; The multi-cavity substrate and the collectively sealed portion are divided into individual pieces for each device region, and individual sealing is performed. Forming a portion.
【請求項2】 複数のデバイス領域を有する多数個取り
基板と前記複数のデバイス領域に搭載する半導体チップ
とを準備する工程と、 前記デバイス領域に前記半導体チップを搭載する工程
と、 前記半導体チップの表面電極とこれに対応する前記デバ
イス領域のボンディング電極とを接続部材によって接続
する工程と、 前記デバイス領域に搭載された前記半導体チップの位置
ずれ、前記デバイス領域における半導体チップの有無、
前記接続部材の接続不良、あるいは前記接続部材の断線
などを検査し、不良を検出する工程と、 前記多数個取り基板における複数のデバイス領域をモー
ルド樹脂によって一括に覆い、前記半導体チップを樹脂
封止するとともに一括封止部を形成する工程と、 前記不良が検出されたデバイス領域の一括封止部表面に
不良マークをマーキングする工程と、 ダイシングラインに沿って前記デバイス領域毎に前記多
数個取り基板および前記一括封止部を分割して個片化
し、個々の封止部を形成する工程とを有することを特徴
とする半導体装置の製造方法。
A step of preparing a multi-piece substrate having a plurality of device regions and a semiconductor chip mounted on the plurality of device regions; a step of mounting the semiconductor chip on the device regions; Connecting a surface electrode and a bonding electrode of the device region corresponding to the surface electrode by a connecting member; and a position shift of the semiconductor chip mounted on the device region, the presence or absence of a semiconductor chip in the device region,
Inspecting the connection failure of the connection member, or disconnection of the connection member, and detecting the failure; and covering a plurality of device regions on the multi-cavity substrate collectively with mold resin, and sealing the semiconductor chip with resin. Forming a batch sealing portion, marking a defect mark on the surface of the batch sealing portion of the device region in which the defect has been detected, and forming the multi-piece substrate for each device region along a dicing line. And a step of dividing the batch sealing portion into individual pieces to form individual sealing portions.
【請求項3】 複数のデバイス領域を有する多数個取り
基板と前記複数のデバイス領域に搭載する半導体チップ
とを準備する工程と、 前記デバイス領域に前記半導体チップを搭載する工程
と、 前記半導体チップの表面電極とこれに対応する前記デバ
イス領域のボンディング電極とを接続部材によって接続
する工程と、 前記複数のデバイス領域の画像をそれぞれ取り込み、取
り込んだ画像から個々のデバイス領域に搭載された前記
半導体チップの位置ずれ、前記デバイス領域における半
導体チップの有無、前記接続部材の接続不良、あるいは
前記接続部材の断線などを検査し、不良を検出する工程
と、 前記多数個取り基板における複数のデバイス領域をモー
ルド樹脂によって一括に覆い、前記半導体チップを樹脂
封止するとともに一括封止部を形成する工程と、 前記不良が検出されたデバイス領域の一括封止部表面に
不良マークをマーキングする工程と、 ダイシングラインに沿って前記デバイス領域毎に前記多
数個取り基板および前記一括封止部を分割して個片化
し、個々の封止部を形成する工程とを有することを特徴
とする半導体装置の製造方法。
A step of preparing a multi-piece substrate having a plurality of device regions and a semiconductor chip to be mounted on the plurality of device regions; a step of mounting the semiconductor chip on the device regions; A step of connecting a surface electrode and a bonding electrode of the device region corresponding to the surface electrode by a connecting member; capturing the images of the plurality of device regions, respectively, of the semiconductor chip mounted on each device region from the captured image; Inspecting the position shift, the presence or absence of the semiconductor chip in the device area, the connection failure of the connection member, or the disconnection of the connection member, and detecting the failure; and molding resin to the plurality of device areas in the multi-cavity substrate. And collectively seal the semiconductor chip with resin and collectively seal Forming, a step of marking a defect mark on the surface of the collective sealing portion of the device region in which the defect is detected, and forming the multi-piece substrate and the collective sealing portion for each device region along a dicing line. Dividing the semiconductor device into individual pieces to form individual sealing portions.
【請求項4】 樹脂封止形の半導体装置の製造方法であ
って、 複数のデバイス領域を有する多数個取り基板と前記複数
のデバイス領域に搭載する半導体チップとを準備する工
程と、 前記デバイス領域に前記半導体チップを搭載する工程
と、 前記半導体チップの表面電極とこれに対応する前記デバ
イス領域のボンディング電極とを接続部材によって接続
する工程と、 前記複数のデバイス領域の画像をそれぞれ取り込み、取
り込んだ画像から個々のデバイス領域に搭載された前記
半導体チップの位置ずれ、前記デバイス領域における半
導体チップの有無、前記接続部材の接続不良、あるいは
前記接続部材の断線などを検査し、不良を検出する工程
と、 前記多数個取り基板における複数のデバイス領域をモー
ルド樹脂によって一括に覆い、前記半導体チップを樹脂
封止するとともに一括封止部を形成する工程と、 前記不良が検出されたデバイス領域の一括封止部表面を
レーザ照射による削除、印刷、またはインク塗布により
不良マークをマーキングする工程と、 ダイシングラインに沿って前記デバイス領域毎に前記多
数個取り基板および前記一括封止部を分割して個片化
し、個々の封止部を形成する工程とを有することを特徴
とする半導体装置の製造方法。
4. A method for manufacturing a resin-encapsulated semiconductor device, comprising the steps of: preparing a multi-piece substrate having a plurality of device regions and a semiconductor chip mounted on the plurality of device regions; Mounting the semiconductor chip on the semiconductor chip, connecting the surface electrodes of the semiconductor chip and the corresponding bonding electrodes of the device region by a connecting member, and capturing and capturing images of the plurality of device regions, respectively. Inspection of the position shift of the semiconductor chip mounted on each device region from the image, the presence or absence of the semiconductor chip in the device region, a connection failure of the connection member, or a disconnection of the connection member, etc., and detecting a failure. A plurality of device regions on the multi-cavity substrate are collectively covered with mold resin; Forming a batch sealing portion while sealing the body chip with a resin, and marking a defect mark by removing, printing, or applying ink on the surface of the batch sealing portion in the device region where the defect is detected by laser irradiation. And a step of dividing the multi-cavity substrate and the collective sealing portion for each device region along a dicing line to singulate and form individual sealing portions. Manufacturing method.
JP2001108913A 2001-04-06 2001-04-06 Manufacturing method of semiconductor device Expired - Fee Related JP3854814B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001108913A JP3854814B2 (en) 2001-04-06 2001-04-06 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001108913A JP3854814B2 (en) 2001-04-06 2001-04-06 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JP2002305266A true JP2002305266A (en) 2002-10-18
JP3854814B2 JP3854814B2 (en) 2006-12-06

Family

ID=18960965

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001108913A Expired - Fee Related JP3854814B2 (en) 2001-04-06 2001-04-06 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JP3854814B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100548010B1 (en) * 2004-06-16 2006-02-01 삼성테크윈 주식회사 Method for decision if die is attached on lead frame
JP2006082328A (en) * 2004-09-15 2006-03-30 Fuji Xerox Co Ltd Sheet with ic tag
KR100585145B1 (en) 2004-06-05 2006-05-30 삼성전자주식회사 Reject frame discrimination system by a z-level and method of a wire bonding using the same
JP2017112317A (en) * 2015-12-18 2017-06-22 Towa株式会社 Electronic component and manufacturing method of the same and electronic component manufacturing apparatus
KR20200040700A (en) 2017-08-18 2020-04-20 나믹스 가부시끼가이샤 Semiconductor device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017155470A1 (en) * 2016-03-09 2017-09-14 Agency For Science, Technology And Research Self-determining inspection method for automated optical wire bond inspection

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100585145B1 (en) 2004-06-05 2006-05-30 삼성전자주식회사 Reject frame discrimination system by a z-level and method of a wire bonding using the same
KR100548010B1 (en) * 2004-06-16 2006-02-01 삼성테크윈 주식회사 Method for decision if die is attached on lead frame
JP2006082328A (en) * 2004-09-15 2006-03-30 Fuji Xerox Co Ltd Sheet with ic tag
JP2017112317A (en) * 2015-12-18 2017-06-22 Towa株式会社 Electronic component and manufacturing method of the same and electronic component manufacturing apparatus
WO2017104169A1 (en) * 2015-12-18 2017-06-22 Towa株式会社 Electronic component, method for manufacturing same, and electronic component manufacturing device
CN108431933A (en) * 2015-12-18 2018-08-21 东和株式会社 Electronic component and its manufacturing method and electronic part making
KR20180095829A (en) * 2015-12-18 2018-08-28 토와 가부시기가이샤 ELECTRONIC COMPONENTS AND METHOD FOR MANUFACTURING THE SAME
KR102261309B1 (en) 2015-12-18 2021-06-07 토와 가부시기가이샤 Electronic component and its manufacturing method and electronic component manufacturing apparatus
CN108431933B (en) * 2015-12-18 2021-07-13 东和株式会社 Electronic component, method of manufacturing the same, and apparatus for manufacturing the same
KR20200040700A (en) 2017-08-18 2020-04-20 나믹스 가부시끼가이샤 Semiconductor device
US11315846B2 (en) 2017-08-18 2022-04-26 Namics Corporation Semiconductor device

Also Published As

Publication number Publication date
JP3854814B2 (en) 2006-12-06

Similar Documents

Publication Publication Date Title
US7439097B2 (en) Taped lead frames and methods of making and using the same in semiconductor packaging
US7081374B2 (en) Method of manufacturing semiconductor device and semiconductor device manufacturing apparatus used in it
US20050026323A1 (en) Method of manufacturing a semiconductor device
JP3544895B2 (en) Resin-sealed semiconductor device and method of manufacturing the same
US20020041025A1 (en) Semiconductor device and method of manufacturing the same
US7888179B2 (en) Semiconductor device including a semiconductor chip which is mounted spaning a plurality of wiring boards and manufacturing method thereof
JPH10284525A (en) Method for producing semiconductor device
JP2003332513A (en) Semiconductor device and its manufacturing method
JP2002134660A (en) Semiconductor device and its manufacturing method
KR100216840B1 (en) Pcb strip of semiconductor package type
JP2003273279A (en) Semiconductor device and its manufacturing method
JP2001044229A (en) Resin-sealed semiconductor device and its manufacture
JP3854814B2 (en) Manufacturing method of semiconductor device
US7781259B2 (en) Method of manufacturing a semiconductor using a rigid substrate
JP2000114206A (en) Manufacture of semiconductor package
JP2000040676A (en) Manufacture of semiconductor device
JPH08227964A (en) Lead frame, semiconductor integrated circuit device, semiconductor integrated circuit device manufacture and semiconductor integrated circuit device manufacture device
JP3854819B2 (en) Manufacturing method of semiconductor device
US6551855B1 (en) Substrate strip and manufacturing method thereof
JP4485210B2 (en) Semiconductor device, electronic device, method for manufacturing semiconductor device, and method for manufacturing electronic device
KR100379087B1 (en) Semiconductor Package Manufacturing Method
JP2001203293A (en) Producing method for semiconductor device
JP2002329731A (en) Method for producing semiconductor device
CN112820723A (en) Multi-base island chip packaging structure and packaging method
JP2002246400A (en) Method of manufacturing semiconductor device

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20041028

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A712

Effective date: 20041028

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20060517

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20060523

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060724

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20060815

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20060911

R150 Certificate of patent (=grant) or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090915

Year of fee payment: 3

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100915

Year of fee payment: 4

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110915

Year of fee payment: 5

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110915

Year of fee payment: 5

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313115

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110915

Year of fee payment: 5

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120915

Year of fee payment: 6

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120915

Year of fee payment: 6

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130915

Year of fee payment: 7

LAPS Cancellation because of no payment of annual fees