JP2002302757A - System and method for film deposition - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a film deposition system by which an organic-compound film having a plurality of functional areas is deposited. SOLUTION: A plurality of evaporation sources (203a to 203c) are provided to the inside of a film deposition chamber 210, by which functional regions composed of the respective organic compounds in the evaporation sources can be continuously formed and further a mixed region can be formed in the interface between the functional regions. By using the film deposition system having such a film deposition chamber, impurity contamination between the functional areas can be prevented and the organic film in which an energy gap in the interface is relaxed can be deposited.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing a light-emitting device having a film containing an organic compound capable of emitting light by applying an electric field (hereinafter referred to as "organic compound film"), an anode and a cathode. The present invention relates to a film forming apparatus and a film forming method used. In particular, the present invention relates to the manufacture of a light-emitting element having a lower driving voltage and a longer lifetime than a conventional light-emitting element. Further, a light-emitting device in this specification refers to an image display device or a light-emitting device using a light-emitting element as an element. In addition, the light emitting device has a connector, for example, an anisotropic conductive film ((FPC:
flexible printed circuit) or TAB (Tape Automat
ed Bonding) tape or TCP (Tape Carrier Packag)
e) A module with a printed circuit board attached to the end of a TAB tape or TCP, or an IC (integrated circuit) using a COG (Chip On Glass) method for a light emitting element
Includes all modules that are directly implemented.

[0002]

2. Description of the Related Art A light emitting element is an element that emits light when an electric field is applied. The light emission mechanism is such that by applying a voltage across the organic compound film between the electrodes, electrons injected from the cathode and holes injected from the anode are recombined at the emission center in the organic compound film to excite molecules. It is said to emit energy by emitting energy when the molecular exciton returns to the ground state.

[0003] The molecular exciton formed by the organic compound can be a singlet excited state or a triplet excited state, and the present specification includes a case where either excited state contributes to light emission. It shall be.

In such a light emitting device, the organic compound film is usually formed as a thin film having a thickness of less than 1 μm. Further, since the light emitting element is a self-luminous element in which the organic compound film itself emits light, there is no need for a backlight as used in a conventional liquid crystal display. Therefore, it is a great advantage that the light emitting element can be manufactured to be extremely thin and lightweight.

In addition, in an organic compound film of, for example, about 100 to 200 nm, the time from injection of carriers to recombination is about several tens of nanoseconds in consideration of the carrier mobility of the organic compound film. Even within the process from recombination to light emission, light emission occurs on the order of microseconds or less. Therefore, one of the features is that the response speed is extremely fast.

Further, since the light-emitting element is a carrier-injection type light-emitting element, it can be driven by a DC voltage and does not easily generate noise. Regarding the driving voltage, first, the thickness of the organic compound film is made to be a uniform ultra-thin film of about 100 nm, and the electrode material is selected so as to reduce the carrier injection barrier to the organic compound film. , A sufficient luminance of 100 cd / m ² was achieved at 5.5 V (Reference 1: CW Tang and SA VanSlyke,
"Organic electroluminescent diodes", Applied Phys
ics Letters, vol. 51, No. 12, 913-915 (1987)).

[0007] Due to such characteristics as thin and light weight, high-speed response, and DC low-voltage driving, light-emitting elements are receiving attention as next-generation flat panel display elements. Also,
Since it is a self-luminous type and has a wide viewing angle, it has relatively good visibility and is considered to be effective as an element used for a display screen of an electric appliance.

By the way, regarding the structure of the light emitting device shown in Document 1, first, as a method of reducing the carrier injection barrier, a work function is low and Mg: Ag is relatively stable.
The alloy is used for the cathode to enhance electron injection. This makes it possible to inject a large amount of carriers into the organic compound film.

Further, as an organic compound film, a single heterostructure in which a hole transport layer composed of a diamine compound and an electron transporting light emitting layer composed of tris (8-quinolinolato) aluminum (hereinafter, referred to as “Alq ₃ ”) are laminated. By applying the structure, the recombination efficiency of carriers is dramatically improved. This is explained as follows.

[0010] For example, in the case of a light emitting device having only Alq ₃ monolayers, since Alq ₃ is an electron-transporting property, most of electrons injected from the cathode will reach the anode without recombining with holes The light emission efficiency is extremely poor. That is, in order to make a single-layer light-emitting element emit light efficiently (or to be driven at a low voltage), a material capable of transporting both electrons and holes in a well-balanced manner (hereinafter referred to as a “bipolar material”).
And Alq ₃ does not satisfy the condition.

However, if a single heterostructure as described in Document 1 is applied, electrons injected from the cathode are blocked at the interface between the hole transporting layer and the electron transporting light emitting layer, and are injected into the electron transporting light emitting layer. You are trapped. Therefore, the recombination of carriers is efficiently performed in the electron-transporting light-emitting layer, resulting in efficient light emission.

If the concept of such a carrier blocking function is developed, it becomes possible to control the recombination region of the carrier. As an example, by inserting a layer capable of blocking holes (hole blocking layer) between the hole transport layer and the electron transport layer, the holes are confined in the hole transport layer, and There is a report that succeeded in making the light emission. (Reference 2: Yasunori KIJIMA, Nobutoshi ASA
I and Shin-ichiro TAMURA, "A Blue Organic Light Em
itting Diode ", Japanese Journal of AppliedPhysics,
Vol. 38, 5274-5277 (1999)).

The light-emitting element described in Document 1 can be said to be an idea of functional separation in which the hole transport is performed by the hole transport layer, and the electron transport and light emission is performed by the electron-transporting light-emitting layer. This concept of functional separation has further evolved into a concept of a double hetero structure (three-layer structure) in which a light emitting layer is interposed between a hole transport layer and an electron transport layer (Reference 3: Chihay).
a ADACHI, Shizuo TOKITO, Tetsuo TSUTSUI and Shogo
SAITO, "Electroluminescence in Organic Films with
Three-Layered Structure ", Japanese Journalof Appli
ed Physics, Vol. 27, No. 2, L269-L271 (1988)).

The advantage of such function separation is that the function separation eliminates the need to simultaneously provide various functions (e.g., light-emitting properties, carrier transport properties, and carrier injection properties from an electrode) to one kind of organic material. That is, a wide degree of freedom can be given to molecular design and the like (for example, it is not necessary to forcibly search for a bipolar material). That is, high luminous efficiency can be easily achieved by combining materials having good light emitting characteristics, materials having excellent carrier transportability, and the like.

Due to these advantages, the concept of the laminated structure (carrier blocking function or function separation) itself described in Document 1 has been widely used up to the present.

In the production of these light emitting devices, especially in a mass production process, a hole transport material, a light emitting material,
When stacking electron transport materials etc. by vacuum evaporation, in order to prevent contamination of each material,
An in-line (multi-chamber) film forming apparatus is used. FIG. 13 is a top view of the film forming apparatus.

In the film forming apparatus shown in FIG. 13, a hole transport layer, a light emitting layer,
The three-layer structure (double hetero structure) of the electron transport layer, the deposition of the cathode, and the sealing treatment are possible.

First, a substrate having an anode is loaded into the loading chamber. The substrate is transferred to the ultraviolet irradiation chamber via the first transfer chamber, and the surface of the anode is cleaned by the irradiation of the ultraviolet light in a vacuum atmosphere. When the anode is an oxide such as ITO, the anode is oxidized in a pretreatment chamber.

Next, a hole transport layer is formed in the vapor deposition chamber 1301, a light emitting layer (three colors of red, green, and blue in FIG. 13) is formed in the vapor deposition chambers 1302 to 1304, and an electron transport layer is formed in the vapor deposition chamber 1305. A layer is formed and a cathode is formed in the deposition chamber 1316. Finally, a sealing process is performed in the sealing chamber, and a light emitting element is obtained from the unloading chamber.

A feature of such an in-line type film forming apparatus is that a vapor deposition chamber 130 in which the vapor deposition of each layer is different.
1 to 1305. Therefore, one evaporation source may be usually provided in each of the evaporation chambers 1301 to 1305 (however, the evaporation chamber 1302
〜1304, when the light emitting layer is formed by doping a dye, two evaporation sources may be required to form the co-evaporated layer.) That is, the device is configured such that the materials of the respective layers hardly mix with each other.

[0021]

However, since the above-described laminated structure is a joint between different kinds of materials,
An energy barrier always occurs at the interface.
If the energy barrier exists, the movement of carriers at the interface is hindered, and thus the following two problems are raised.

First, it is an obstacle to further reduction of the driving voltage. In fact, in the current organic light-emitting devices, the device having a single-layer structure using a conjugated polymer is superior in terms of drive voltage, and the top data in power efficiency (unit: [lm / W]) (however, singlet (Comparison of light emission from excited state) is reported (Reference 4: Tetsuo Tsutsui, "Journal of the Society of Applied Physics, Society of Organic Molecules and Bioelectronics", Vol. 11, No. 1, P.8)
(2000)).

The conjugated polymer described in Document 4 is a bipolar material, and the level of recombination efficiency of carriers can be attained at a level equivalent to that of a laminated structure. Therefore, if the recombination efficiency of carriers can be made equivalent without using a laminated structure by a method such as using a bipolar material, it is shown that a single-layer structure with fewer interfaces actually lowers the driving voltage. I have.

For example, at the interface with the electrode, there is a method of reducing the driving voltage by inserting a material for relaxing the energy barrier to enhance the carrier injectability (Reference 5: Ta).
keoWakimoto, Yoshinori Fukuda, Kenichi Nagayama, A
kira Yokoi, Hitoshi Nakada, and Masami Tsuchida, "
Organic EL Cells Using Alkaline Metal Compoundsas
Electron Injection Materials ", IEEE TRANSACTIONS O
N ELECTRON DEVICES, VOL. 44, NO.8, 1245-1248 (199
7)). In Literature 5, the drive voltage was successfully reduced by using Li ₂ O as the electron injection layer.

However, between organic materials (for example, between the hole transport layer and the light emitting layer, hereinafter referred to as “organic interface”)
This is an unsolved field for carrier mobility, and is considered to be an important point for catching up with a low driving voltage of a single-layer structure.

Further, as another problem caused by the energy barrier, influence on the lifetime of the organic light emitting device is considered. That is, the movement of carriers is hindered, and the charge is accumulated, thereby lowering the luminance.

Although a clear theory has not been established for this degradation mechanism, a hole injection layer is inserted between the anode and the hole transport layer, and a rectangular wave ac drive is used instead of a dc drive. It has been reported that the decrease in luminance can be suppressed (Reference 6: SA VanSlyke, CH Ch.
en, and CW Tang, "Organic electroluminescentdev
ices with improved stability ", Applied Physics Let
ters, Vol. 69, No. 15, 2160-2162 (1996)). This can be said to be an experimental proof that the decrease in luminance was able to be suppressed by eliminating charge accumulation by inserting the hole injection layer and ac driving.

As described above, while the laminated structure has the merit that the recombination efficiency of carriers can be easily increased and the range of material selection can be widened from the viewpoint of function separation, it is necessary to create a large number of organic interfaces. Thus, it can be said that the movement of the carrier is hindered and the driving voltage and the luminance are reduced.

In a conventional film forming apparatus, when a hole transporting material, a light emitting layer material, an electron transporting material, and the like are stacked by vacuum evaporation, they are placed in separate chambers so as not to contaminate the materials. Although a film is formed in a different chamber for each layer by providing an evaporation source, in such an apparatus, when the above-described laminated structure is formed, not only is the organic interface clearly separated, but also the substrate is separated. However, there is a problem in that impurities such as water and oxygen are mixed into the organic interface when moving between the chambers.

Therefore, according to the present invention, a concept different from the conventionally used laminated structure is used to alleviate the energy barrier existing in the organic compound film to enhance the mobility of carriers, and at the same time to improve the function separation of the laminated structure. Similarly, a film forming apparatus for manufacturing an element having a function of various materials is provided. Another object is to provide a film forming method using these film forming apparatuses.

[0031]

As for the relaxation of the energy barrier in the laminated structure, the technique of inserting a carrier injection layer as shown in Reference 5 is remarkably observed. In other words, at the interface of the laminated structure with a large energy barrier,
By inserting a material that relaxes the energy barrier, the energy barrier can be designed stepwise.

As a result, it is possible to enhance the carrier injection property from the electrode, and it is possible to reduce the driving voltage to some extent. However, the problem is that by increasing the number of layers, the number of organic interfaces increases conversely. This is considered to be the reason that the single-layer structure retains the top data of the driving voltage and the power efficiency as shown in Reference 4.

To put it the other way around, by overcoming this point, while taking advantage of the advantages of the laminated structure (a variety of materials can be combined and a complicated molecular design is not required),
In addition, it can catch up with the drive voltage and power efficiency of the single layer structure.

Therefore, in the present invention, when an organic compound film 103 comprising a plurality of functional regions is formed between an anode 101 and a cathode 102 of a light emitting device as shown in FIG. Instead of (FIG. 1A), between the first functional area 104 and the second functional area 105,
Mixed region 10 made of both a material constituting first functional region 104 and a material constituting second functional region 105
6 (FIG. 1B).

By applying the structure as shown in FIG. 1B, the energy barrier existing between the functional regions can be reduced as shown in FIG.
It is considered that the carrier injection property is reduced as compared with the conventional structure shown in FIG. Specifically, FIG.
FIG. 1C shows an energy band diagram of the structure of FIG.
As shown in FIG. 1, when a structure in which a mixed region is provided between functional regions as shown in FIG. 1B is formed, an energy band diagram is as shown in FIG. That is, the energy barrier between the functional regions is reduced by forming the mixed region. Therefore, it is possible to reduce the driving voltage and prevent the luminance from decreasing.

As described above, in the film forming apparatus of the present invention, the region (first functional region) in which the first organic compound can exhibit a function and the material constituting the first functional region are different from each other. In the production of a light-emitting element including at least a region in which two organic compounds can exhibit functions (a second functional region), and a light-emitting device having the same, the first functional region and the second functional region In the meantime, a mixed region comprising an organic compound constituting the first functional region and an organic compound constituting the second functional region is produced.

The first organic compound and the second organic compound have a hole-injecting property for receiving holes from the anode and a hole-transporting property and a hole-transporting property where the hole mobility is larger than the electron mobility. It has a property selected from the group consisting of electron transporting properties, which have a higher electron mobility than electron mobility, electron injecting properties for receiving electrons from the cathode, blocking properties for preventing the transfer of holes or electrons, and luminescent properties for emitting light. And have different properties.

The organic compound having a high hole-injecting property is preferably a phthalocyanine-based compound, the organic compound having a high hole-transporting property is preferably an aromatic diamine compound, and the organic compound having a high electron-transporting property. as,
A metal complex having a quinoline skeleton, a metal complex having a benzoquinoline skeleton, an oxadiazole derivative, a triazole derivative, or a phenanthroline derivative is preferable. Further, as the organic compound which emits light, a metal complex having a quinoline skeleton, a metal complex having a benzoxazole skeleton, or a metal complex having a benzothiazole skeleton which emits light stably is preferable.

Table 1 shows combinations of the first and second functional areas described above. Combinations A to E
May be introduced alone (for example, only A) or may be introduced in combination (for example, both A and B).

[0040]

[Table 1]

When the combination C and D are introduced in combination (that is, when a mixed region is introduced at both interfaces of the luminescent functional region), diffusion of molecular excitons formed in the luminescent region is prevented. Thereby, the luminous efficiency can be further increased. Therefore, the excitation energy of the luminescent region is
It is preferably lower than the excitation energy of the hole region and the excitation energy of the electron transport region. In this case, a light-emitting material having poor carrier transportability can be used as the light-emitting region, and thus there is an advantage that the range of material selection can be widened. In addition,
The excitation energy referred to in this specification is the highest occupied molecular orbit (HOMO) in a molecule.
ar orbital) and the lowest unoccupied molecular orbital (LUMO: lowest uno)
ccupied molecular orbital).

More preferably, the light-emitting region is composed of a host material and a light-emitting material (dopant) having lower excitation energy than the host material, and the excitation energy of the dopant is the same as the excitation energy of the hole transporting region and the electron. The design is to be lower than the excitation energy of the transport layer. Thereby, diffusion of molecular excitons of the dopant can be prevented, and the dopant can emit light effectively. If the dopant is a carrier trap type material, the recombination efficiency of carriers can be increased.

In recent years, from the viewpoint of luminous efficiency,
An organic light-emitting element that can convert energy released when returning from a triplet excited state to a ground state (hereinafter, referred to as “triplet excited energy”) into light emission has been attracting attention because of its high luminous efficiency (Reference 7: DF O'Brien, MA Bal
do, ME Thompson and SR Forrest, "Improvedene
rgy transfer in electrophosphorescent devices ", Ap
plied Physics Letters, vol. 74, No. 3, 442-444 (19
99)) (Reference 8: Tetsuo TSUTSUI, Moon-Jae YANG, Masa
yuki YAHIRO, Kenji NAKAMURA, Teruichi WATANABE, Ta
ishi TSUJI, Yoshinori FUKUDA, Takeo WAKIMOTO and S
atoshi MIYAGUCHI, "High Quantum Efficiency in Orga
nic Light-Emitting Devices with Iridium-Complex as
a Triplet Emissive Center ", Japanese Journal of A
pplied Physics, Vol. 38, L1502-L1504 (1999)).

Reference 7 uses a metal complex containing platinum as a central metal, and Reference 8 uses a metal complex containing iridium as a central metal. An organic light-emitting element that can convert these triplet excitation energy into light emission (hereinafter, referred to as a “triplet light-emitting element”) can achieve higher luminance light emission and higher light emission efficiency than before.

However, according to the report example of Reference 8,
The half-life of luminance in the case where the initial luminance was set at 500 cd / m ² is 17
It is about 0 hours, and there is a problem in the element life. Therefore, by applying the present invention to a triplet light-emitting element, a very high-performance light-emitting element that has a long lifetime can be provided in addition to high-luminance light emission and high light emission efficiency due to light emission from a triplet excited state. .

Therefore, the present invention includes the case where a material capable of converting triplet excitation energy into light emission is added as a dopant to the mixed region. In the formation of the mixed region, the mixed region may have a concentration gradient.

In the film forming apparatus of the present invention, a plurality of functional regions are formed in the same film forming chamber having a plurality of evaporation sources.
In addition, a light-emitting element having a mixed region as described above is formed.

The film forming chamber 210 of the film forming apparatus of the present invention will be described with reference to FIG. As shown in FIG.
Below 00, a metal mask 202 fixed to the holder 201 is provided, and below the metal mask 202, evaporation sources 203 (203a to 203c) are provided. The evaporation source 203 (203a to 203c) includes an organic compound 204 (204a to 204c) forming an organic compound film,
The material chamber 205 (205a to 205)
c) and a shutter 206 (206a to 206c). Note that in the film formation apparatus of the present invention, the evaporation source or the substrate to be deposited is preferably moved (rotated) so that the film is formed uniformly.

The material chamber 205 (205a-205)
c) is made of a conductive metal material, specifically, as shown in FIG.
The structure shown in FIG. The material chamber 205 (205a
If the resistance produced when a voltage is applied to ～205C) the internal organic compound 204 (204a-204c) is heated, it is deposited vaporized to the surface of the substrate 200. Note that, in this specification, the surface of the substrate 200 includes the substrate and a thin film formed thereon, and here, the anode is formed on the substrate.

The shutter 206 (206a-20)
6c) is a vaporized organic compound 204 (204a to 20a).
4c) is controlled. That is, when the shutter is open, the organic compound 204 (20
4a to 204c) can be deposited.

The organic compound 204 (204a-20)
In step 4c), it is desirable to vaporize by heating before vapor deposition and to perform vapor deposition as soon as the shutters 206 (206a to 206c) are opened during vapor deposition, because the film formation time can be shortened.

In the film forming apparatus of the present invention, an organic compound film having a plurality of functional regions is formed in one film forming chamber.
A plurality of (203a to 203c) are provided accordingly. Each evaporation source 203 (203a to 203c)
The organic compound vaporized in the above is scattered upward and deposited on the substrate 200 through an opening (not shown) provided in the metal mask 202.

First, the first organic compound 204a provided in the first material chamber 205a is deposited. Note that the first organic compound 204a is vaporized in advance by resistance heating, and is scattered in the direction of the substrate 200 by opening the shutter 206a during vapor deposition. As a result, FIG.
The first functional region 210 shown in FIG.

Then, with the first organic compound 204a deposited, the shutter 206b is opened, and the second material chamber 2 is opened.
The second organic compound 204b provided in 05b is deposited. Note that the second organic compound is also vaporized by resistance heating in advance, and is scattered in the direction of the substrate 200 by opening the shutter 206b during vapor deposition. Here, a first mixed region 211 including the first organic compound 204a and the second organic compound 204b can be formed.

After a while, the shutter 20
Only 6a is closed and the second organic compound 204b is deposited. Thereby, the second functional region 212 can be formed.

Here, the method of forming a mixed region by simultaneously depositing two kinds of organic compounds has been described. However, after depositing the first organic compound, the second organic compound is deposited under the deposition atmosphere. By depositing a compound, a mixed region can be formed between the first functional region and the second functional region.

Next, with the second organic compound 204b being deposited, the shutter 206c is opened, and the third material chamber 20 is opened.
5c, the third organic compound 204c is deposited. Note that the third organic compound 204c is also vaporized in advance by resistance heating, and the shutter 206c
Are scattered in the direction of the substrate 200 by opening. Here, the second organic compound 204b and the third organic compound 20
4c can be formed.

After a while, the shutter 20
Only 6b is closed, and the third organic compound 204c is deposited. Thereby, the third functional region 214 can be formed.

Finally, a light emitting element formed by the film forming apparatus of the present invention is completed by forming a cathode.

Further, as other organic compound films,
As shown in FIG. 2C, after the first functional region 220 is formed using the first organic compound 204a, a first mixture of the first organic compound 204a and the second organic compound 204b is formed. A region 221 is formed, and a second functional region 222 is formed using the second organic compound 204b. Then, during the formation of the second functional region 222,
The second mixed region 223 is formed by simultaneously opening the shutter 206c and simultaneously depositing the third organic compound 204c.

After a while, the second functional area 222 is formed again by closing the shutter 206c.
Then, a light emitting element is formed by forming a cathode.

In the film forming apparatus of the present invention, a film is formed using a plurality of material chambers in the same film forming chamber.
In order to improve the film forming property, the material chamber where the organic material used for film formation is provided moves to the optimal position under the substrate during film formation, or the substrate moves to the optimal position on the material chamber. A function of moving may be provided.

Further, the deposition chamber of the present invention is provided with a deposition prevention shield 207 for preventing an organic compound from adhering to the inner wall of the deposition chamber during vapor deposition. By providing the deposition prevention shield 207, an organic compound that has not been deposited on the substrate can be attached. Further, a heater -208 is provided in contact with the periphery of the deposition-inhibiting shield 207.
07 can be heated. By heating the deposition shield 207, the attached organic compound can be vaporized. This makes it possible to clean the inside of the film formation chamber.

The film forming apparatus of the present invention capable of forming an organic compound film as described above can form an organic compound film having a plurality of functional regions in the same film forming chamber. Is not contaminated by impurities, and a mixed region can be formed at the interface of the functional region. As described above, a light-emitting element having a plurality of functions can be manufactured without a clear stacked structure (that is, without a clear organic interface).

[0065]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The structure of a film forming apparatus according to the present invention will be described with reference to FIG. FIG. 3A is a top view of the film forming apparatus, and FIG. 3B is a cross-sectional view. In addition, a common code is used for a common part. Also,
In this embodiment mode, an example is described in which three types of organic compound films (red, green, and blue) are formed in each of the film forming chambers of an in-line film forming apparatus having three film forming chambers.

In FIG. 3A, reference numeral 300 denotes a load chamber, and a substrate provided in the load chamber is transferred to the first alignment chamber 301. Note that, in the first alignment chamber 301, the alignment of the metal mask 303 fixed in advance to the holder 302 is performed for the entire holder, and one electrode (here, a light emitting element) is formed on the metal mask 303 for which alignment has been completed. In this case, the substrate 304 on which the anode is formed is mounted. This allows
The substrate 304 and the metal mask 303 are integrated and transferred to the first film formation chamber 305.

Here, the metal mask 303 and the substrate 304
With reference to FIG. Note that the same components as those in FIG. 3 are denoted by the same reference numerals.

FIG. 4A shows a cross-sectional structure. The holder 302 includes a mask holder 401, a shaft 402, a substrate holder 403, a control mechanism 404, and auxiliary pins 405. The metal mask 303 is fixed in accordance with the projection 406 on the mask holder 401, and the metal mask 3
The substrate 304 is mounted on the substrate 03. The substrate 304 on the metal mask 303 is fixed by auxiliary pins 405.

FIG. 4B is a top view of the region 407 in FIG. Note that the substrate 304 is fixed by a substrate holder 403 as shown in FIG. 4A or 4B.

FIG. 4C is a cross-sectional view taken along the line BB ′ of FIG. Assuming that the position of the metal mask 303 shown in FIG.
The position of the metal mask 303 shown in FIG. 4D in which the shaft 402 is moved in the Z-axis direction is that at the time of alignment.

In the case of FIG. 4D, the axis 402 is the X axis,
It is possible to move in the Y-axis and Z-axis directions.
The inclination (θ) of the plane with respect to the Z axis can be moved. Note that the control mechanism 404 outputs the movement information from the position information obtained by the CCD camera and the position information input in advance, so that the position of the mask holder is set to a predetermined value via the shaft 402 connected to the control mechanism 404. Can be adjusted to the position.

FIG. 4E shows an enlarged view of the region 408 of the metal mask 303. The metal mask 303 used here includes a mask a 409 and a mask b 410 formed using different materials. At the time of vapor deposition, an organic compound that has passed through these openings 411 is formed on a substrate. These shapes are devised so as to improve the accuracy of film formation when vapor deposition is performed using a mask, and are used so that the substrate 304 and the mask b410 are in contact with each other.

When the alignment of the metal mask 303 is completed, the axis is moved in the Z-axis direction to move the metal mask 303 again to the position shown in FIG.
By fixing the metal mask 303 and the substrate 304 at 05, the alignment of the metal mask 303 and the alignment of the metal mask 303 and the substrate 304 can be completed.

In the present embodiment, the openings of the metal mask 303 may be rectangular, elliptical, or linear, or they may be arranged in a matrix or in a delta.

In FIG. 3, the first film forming chamber 305 has:
A plurality of evaporation sources 306 are provided. The evaporation source 3
Reference numeral 06 includes a material chamber (not shown) in which an organic compound is provided and a shutter (not shown) that controls opening and closing of the organic compound vaporized in the material chamber to scatter outside the material chamber.

Further, the plurality of evaporation sources 306 provided in the first film forming chamber 305 are provided with a plurality of organic compounds having different functions constituting the organic compound film of the light emitting element, respectively. Note that the organic compound here refers to a hole-injecting property for receiving holes from the anode, a hole-transporting property in which the hole mobility is larger than the electron mobility, and a property of the electron mobility than the hole mobility. Is an organic compound having properties such as a large electron transporting property, an electron injecting property for receiving an electron from a cathode, a blocking property for preventing movement of holes or electrons, and a light emitting property for emitting light.

The organic compound having a high hole-injecting property is preferably a phthalocyanine compound, the organic compound having a high hole-transporting property is preferably an aromatic diamine compound, and the organic compound having a high electron-transporting property. as,
A metal complex containing a benzoquinoline skeleton, an oxadiazole derivative, a triazole derivative, or a phenanthroline derivative is preferable. Further, as the organic compound which emits light, a metal complex having a quinoline skeleton, a metal complex having a benzoxazole skeleton, or a metal complex having a benzothiazole skeleton which emits light stably is preferable.

In the first film forming chamber 305, the organic compounds provided in these evaporation sources are sequentially vapor-deposited by the method described with reference to FIG. 2 to thereby form a first region having a plurality of functional regions and a mixed region. An organic compound film (here, red) is formed.

Next, the substrate 304 is transported to the second alignment chamber 307. In the second alignment chamber 307, the substrate 304 and the metal mask 303 are once separated, and then the metal mask 303 is aligned so as to match the position where the second organic compound film is formed. After the completion of the alignment, the substrate 304 and the metal mask 303 are again formed.
And fix it.

Then, the substrate 304 is transferred to the second film forming chamber 308.
Transport to Similarly, the second film formation chamber is provided with a plurality of evaporation sources. Similarly to the first film formation chamber 305, a plurality of organic compounds are sequentially used for vapor deposition to form a plurality of functional regions, and A second organic compound film (here, green) having a mixed region is formed.

Further, the substrate 304 is transported to the third alignment chamber 309. In the third alignment chamber 309, after the substrate 304 and the metal mask 303 are once separated, alignment of the metal mask 303 is performed so as to match the position where the third organic compound film is formed. After the completion of the alignment, the substrate 304 and the metal mask 303 are again overlapped and fixed.

Then, the substrate 304 is transferred to the third film forming chamber 310.
Transport to Similarly, the third film formation chamber is provided with a plurality of evaporation sources. Similarly to the other film formation chambers, a plurality of organic compounds are sequentially used for vapor deposition to form a plurality of functional regions and a mixed region. A third organic compound film (here,
Blue) is formed.

Finally, the substrate 304 is placed in the unload chamber 31
1 and taken out of the film forming apparatus.

As described above, by aligning the metal mask 303 in the alignment chamber each time a different organic compound film is formed, a plurality of organic compound films can be formed in the same apparatus. As described above, since the functional regions where one organic compound film is formed are formed in the same deposition chamber, impurity contamination between the functional regions can be avoided. Furthermore, in this film forming apparatus,
Since a mixed region can be formed between different functional regions, a light-emitting element having a plurality of functions can be manufactured without a clear stacked structure.

In this embodiment, an apparatus for forming an organic compound film has been described. However, the film forming apparatus of the present invention is not limited to this configuration, and is formed on an organic compound film. A structure in which a deposition chamber in which a cathode is formed or a treatment chamber in which a light-emitting element can be sealed may be provided. The order in which the organic compound films that emit red, green, and blue light are formed may be in any order.

Further, the means for cleaning the alignment chamber and the film forming chamber shown in this embodiment may be provided. In addition, in the area 312 of FIG.
When such a means is provided, a cleaning preliminary chamber 313 as shown in FIG. 14 can be provided.

In the cleaning preliminary chamber 313, NF
By decomposing a reactive gas such as ₃ or CF ₄ to generate radicals and introducing them into the second alignment chamber 307, cleaning in the second alignment chamber 307 becomes possible. The second alignment chamber 307
By providing a used metal mask in advance, the metal mask can be cleaned.
Further, the inside of the second film formation chamber 308 can be cleaned by introducing radicals into the second film formation chamber 308. Note that a cleaning preparatory chamber 313 is connected to the second alignment chamber 307 and the second film forming chamber 308 via a gate (not shown), respectively, so that the gate is opened when introducing radicals. It is good to keep it.

[0088]

[Embodiment 1] A case where a film forming apparatus of the present invention is an in-line system will be described with reference to FIG. In FIG. 5, reference numeral 501 denotes a load chamber, from which a substrate is transferred. Note that in this embodiment, a substrate refers to a substrate formed up to an anode or a cathode which is one electrode of a light-emitting element (up to an anode in this embodiment). The load chamber 501 is provided with an exhaust system 500a, and the exhaust system 500a includes the first valve 51, the turbo molecular pump 5,
2, a configuration including a second valve 53, a third valve 54, and a dry pump 55.

In this embodiment, the materials used in the processing chambers such as the load chamber, the alignment chamber, the film formation chamber, the sealing chamber, and the unload chamber which are cut off by the gate include:
Since the adsorbability of impurities such as oxygen and water can be reduced by reducing the surface area, a material such as aluminum or stainless steel (SUS) that has been subjected to electrolytic polishing and made into a mirror surface is used for the inner wall surface. An internal member made of a material such as ceramics that has been treated so as to minimize pores is used. These materials have a center average roughness of 3
It has a surface smoothness of not more than 0 °.

Although the first valve 51 is a main valve having a gate valve, a butterfly valve may be used also as a conductance valve. The second valve 53 and the third valve 54 are fore valves. First, the second valve 53 is opened and the load chamber 501 is driven by the dry pump 55.
Is roughly reduced, and then the first valve 51 and the third valve 54
And the load in the load chamber 501 is reduced to a high vacuum by the turbo-molecular pump 52. Note that a mechanical booster pump may be used instead of the turbo molecular pump, or a turbo molecular pump may be used after increasing the degree of vacuum with the mechanical booster pump.

Next, what is indicated by 502 is an alignment chamber. Here, alignment of a metal mask and placement of a substrate on the metal mask are performed for film formation in a film formation chamber to be transported next, and this is called an alignment chamber (A) 502. For the alignment method here,
This may be performed by the method described with reference to FIG. The alignment chamber (A) 502 has an exhaust system 500b. Also,
The load chamber 501 is hermetically shut off by a gate (not shown).

Further, the alignment chamber (A) 502
A cleaning preliminary chamber 513a is provided, and NF ₃ and C
By decomposing a reactive gas such as F ₄ to generate radicals and introducing them into the alignment chamber (A) 502, cleaning in the alignment chamber (A) 502 becomes possible. By providing a used metal mask in the alignment chamber (A) 502 in advance, the metal mask can be cleaned.

Next, reference numeral 503 denotes a film forming chamber for forming a first organic compound film by a vapor deposition method, which is called a film forming chamber (A). The film formation chamber (A) 503 includes an exhaust system 500c. Further, the alignment chamber (A) 502 is hermetically shut off by a gate (not shown).

Further, like the alignment chamber (A) 502, the film forming chamber (A) 503 is
Is provided. Note that, here, radicals generated by decomposing a reactive gas such as NF ₃ or CF ₄ are introduced into the film formation chamber (A) 503 to form the film formation chamber (A).
The inside of 503 can be cleaned.

In this embodiment, a film formation chamber having the structure shown in FIG. 2 is provided as the film formation chamber (A) 503, and a first organic compound film which emits red light is formed. Further, as the evaporation source, a first evaporation source provided with a hole-injecting organic compound, a second evaporation source provided with a hole-transporting organic compound, and a host of an organic compound having a light-emitting property. A third evaporation source having an organic compound having a hole-transporting property, a fourth evaporation source having an organic compound having a light-emitting property, and a fifth evaporation source having an organic compound having a blocking property, A sixth evaporation source having an electron transporting organic compound is provided.

In this embodiment, as the hole-injecting organic compound provided in the first evaporation source, copper phthalocyanine (hereinafter referred to as Cu-Pc) was used. 4,4′-bis [N
-(1-naphthyl) -N-phenyl-amino] -biphenyl (hereinafter referred to as α-NPD), an organic compound serving as a host provided in a third evaporation source (hereinafter referred to as a host material)
4,4′-dicarbazole-biphenyl (hereinafter referred to as CBP), and 2,3,7,8,12,13,17,17 as luminescent organic compounds provided in the fourth evaporation source
18-octaethyl-21H, 23H-porphyrin-
Platinum (hereinafter, referred to as PtOEP), a blocking organic compound provided in the fifth evaporation source, bathocuproin (hereinafter, referred to as BCP), and an electron-transporting organic compound provided in the sixth evaporation source, tris (8 - quinolinolato) aluminum (hereinafter, referred to as Alq ₃₎ is used.

[0097] By sequentially vapor-depositing these organic compounds, an organic compound film composed of regions having functions of hole injection, hole transport, luminescence and electron transport is formed on the anode. can do.

In this embodiment, a mixed region is formed at the interface between the different functional regions by simultaneously depositing the organic compounds forming both functional regions. That is, mixed regions are formed at the interface between the hole-injecting region and the hole-transporting region and at the interface between the hole-transporting region and the electron-transporting region including the light-emitting region.

Specifically, Cu-Pc is deposited to a thickness of 15 nm to form a first functional region, and then Cu-Pc and α-NPD are simultaneously deposited to form a 5-10 nm film.
Forming a first mixed region with a film thickness of 40 n
m to form a second functional area, α-NP
D and CBP are simultaneously deposited to form a second mixed region with a thickness of 5 to 10 nm.
A third functional region is formed by forming a film with a thickness of 0 nm, and CBP and PtOEP are simultaneously deposited at the time of forming the third functional region, so that the third functional region is entirely or partially formed. Three mixed regions are formed. Here,
The third mixed region has a light emitting property. In addition, CBP and B
A fourth mixed region is formed by simultaneously depositing CP to a thickness of 5 to 10 nm. Further, a fourth functional region is formed by depositing BCP to a thickness of 8 nm.
Further, a fifth mixed region is formed by simultaneously depositing BCP and Alq ₃ to a thickness of 5 to 10 nm. Finally, the fifth functional region can be formed by forming Alq ₃ to a thickness of 25 nm, and thus, a first organic compound film is formed.

Here, a case has been described in which six types of organic compounds having different functions are provided in each of the six evaporation sources as the first organic compound film, and these are deposited to form an organic compound film. The present invention is not limited to this, but may be any plural types. The number of organic compounds provided in one evaporation source does not necessarily need to be one, but may be plural. For example, in addition to one type of material provided as a luminescent organic compound in the evaporation source,
Another organic compound which can be a dopant may be provided together. Note that a known material may be used as an organic compound having these multiple functions and forming an organic compound film which emits red light.

It is preferable that the evaporation source is controlled by a microcomputer so that the film formation speed can be controlled.
In addition, it is preferable that the mixing ratio can be controlled when a plurality of organic compounds are formed at the same time.

Next, what is indicated by 506 is an alignment chamber. Here, alignment of the metal mask and disposition of the substrate on the metal mask are performed for film formation in the film formation chamber to be transported next, and this is called an alignment chamber (B) 506. For the alignment method here,
This may be performed by the method described with reference to FIG. Note that the alignment chamber (B) 506 includes an exhaust system 500d. Also,
The film forming chamber (A) 503 is hermetically shut off by a gate (not shown). Further, similarly to the alignment chamber (A) 502, a cleaning preliminary chamber 513c hermetically sealed off by a gate (not shown) is provided.

Next, reference numeral 507 denotes a film forming chamber for forming a second organic compound film by a vapor deposition method, which is called a film forming chamber (B). The film formation chamber (B) 507 includes an exhaust system 500e. The alignment chamber (B) 506 is hermetically closed by a gate (not shown). Further, the film forming chamber (A) 50
As in the case of No. 3, a cleaning preliminary chamber 513d hermetically closed by a gate (not shown) is provided.

In this embodiment, a film formation chamber having the structure shown in FIG. 2 is provided as the film formation chamber (B) 507, and a second organic compound film which emits green light is formed. As the evaporation source, a first evaporation source provided with a hole-injecting organic compound, a second evaporation source provided with a hole-transporting organic compound, and a third evaporation source provided with a hole-transporting organic compound. A fourth evaporation source comprising a host material of
A fifth evaporation source including a light-emitting organic compound, a sixth evaporation source including an organic compound having a blocking property, and a seventh evaporation source including an electron-transporting organic compound are provided. .

In this embodiment, as the hole-injecting organic compound provided for the first evaporation source, Cu—Pc,
As a hole transporting organic compound provided for the second evaporation source,
MTDATA, α-NPD as a hole transporting organic compound provided in a third evaporation source, CBP as a hole transporting host material provided in a fourth evaporation source, and a luminescent organic compound provided in a fifth evaporation source Tris (2-phenylpyridine) iridium (Ir (ppy) ₃ ) as a compound, BCP as a blocking organic compound provided in a sixth evaporation source,
As an electron transporting organic compound provided for the seventh evaporation source,
Alq ₃ is used.

By sequentially depositing these organic compounds, a second organic compound film comprising a region having functions of hole transport, light emission, blocking and electron transport is formed on the anode. Can be formed.

In this embodiment, a mixed region is formed at the interface between different functional regions by simultaneously vapor-depositing organic compounds forming both functional regions. That is, mixed regions are formed at the interface between the hole transporting region and the blocking region and at the interface between the blocking region and the electron transporting region.

Specifically, after forming Cu-Pc to a thickness of 10 nm to form a first functional region, Cu-Pc and MTDATA are simultaneously evaporated to form 5 to 10 n
The first mixed region is formed with a thickness of m.
A second functional region is formed by forming a film having a thickness of
TDATA and α-NPD are simultaneously deposited to form a second mixed region with a thickness of 5 to 10 nm, and α-N
PD is deposited to a thickness of 10 nm to form a third functional region, and α-NPD and CBP are simultaneously deposited to form a third mixed region with a thickness of 5 to 10 nm.
P is deposited to a thickness of 20 to 40 nm to form a fourth functional region, and when forming the fourth functional region, (Ir (ppy) ₃ ) is simultaneously vapor-deposited on a part or the whole of the fourth functional region. Thus, a fourth mixed region is formed, CBP and BCP are simultaneously deposited to form a fifth mixed region with a thickness of 5 to 10 nm, and BCP is formed to a thickness of 10 nm to form a fifth mixed region. By forming a functional region, forming a sixth mixed region with a thickness of ₅ to 10 nm by depositing BCP and Alq ₃ simultaneously, and finally forming Alq ₃ with a thickness of 40 nm, the sixth mixed region is formed. A functional region is formed, and a second organic compound film is formed.

Here, the case where the organic compounds having different functions are provided in each of the seven evaporation sources as the second organic compound film and these are vapor-deposited to form the organic compound film has been described. Is not limited to this, and may be plural. Note that a known material may be used as the organic compound that forms the organic compound film that has these multiple functions and emits green light.

Next, what is indicated by 508 is an alignment chamber. Here, alignment of a metal mask and placement of a substrate on the metal mask are performed for film formation in a film formation chamber to be transported next, and this is called an alignment chamber (C) 508. For the alignment method here,
This may be performed by the method described with reference to FIG. Note that the alignment chamber (C) 508 includes an exhaust system 500f. Also,
The film formation chamber (B) 507 is hermetically shut off by a gate (not shown). Further, similarly to the alignment chamber (A) 502, a cleaning preliminary chamber 513e hermetically closed and shut off by a gate (not shown) is provided.

Next, reference numeral 509 denotes a film forming chamber for forming a third organic compound film by a vapor deposition method, which is called a film forming chamber (C). The film formation chamber (C) 509 includes an exhaust system 500 g. The alignment chamber (C) 508 is hermetically shut off by a gate (not shown). Further, the film forming chamber (A) 50
3, a cleaning preliminary chamber 513f hermetically closed by a gate (not shown) is provided.

In the present embodiment, the film forming chamber (C) 509 is formed as shown in FIG.
Is provided, and a third organic compound film which emits blue light is formed. Further, as the evaporation source, a first evaporation source having an organic compound having a hole injecting property, a second evaporation source having an organic compound having a light emitting property, and a second evaporation source having an organic compound having a blocking property. Three evaporation sources and a fourth evaporation source including an electron transporting organic compound are provided.

In this embodiment, as the hole-injecting organic compound provided for the first evaporation source, Cu—Pc,
As a luminescent organic compound provided for the second evaporation source, α-
BCP is used as NPD, a blocking organic compound provided for the third evaporation source, and Alq ₃ is used as an electron transporting organic compound provided for the fourth evaporation source.

By sequentially depositing these organic compounds, a third organic compound film comprising a region having functions of hole injection, light emission, blocking and electron transport is formed on the anode. can do.

In this embodiment, a mixed region is formed at the interface between the different functional regions by simultaneously depositing the organic compounds forming both functional regions. That is, mixed regions are formed at the interface between the hole injection region and the light emitting region, the interface between the light emitting region and the blocking region, and the interface between the blocking region and the electron transporting region.

More specifically, after forming Cu-Pc to a thickness of 20 nm to form a first functional region, Cu-Pc and α-NPD are simultaneously vapor-deposited to form a 5-10 nm film.
Forming a first mixed region with a film thickness of 40 n
m to form a second functional area, α-NP
D and BCP are simultaneously deposited to form a second mixed region with a thickness of 5 to 10 nm, BCP is formed to a thickness of 10 nm to form a third functional region, and BCP and Alq
₃ is simultaneously deposited to form a third mixed region with a thickness of ₅ to 10 nm, and finally, Alq3 is formed with a thickness of 40 nm to form a third organic compound film.

Here, a case has been described in which four types of organic compounds having different functions are provided in four evaporation sources as the third organic compound film, and these are sequentially vapor-deposited to form an organic compound film. However, the present invention is not limited to this, and may be any plural number. The number of organic compounds provided in one evaporation source does not necessarily need to be one, but may be plural. For example, in addition to one kind of material provided as a light-emitting organic compound in the evaporation source, another organic compound which can be a dopant may be provided together. Note that a known material may be used as an organic compound having these multiple functions and forming an organic compound film which emits blue light.

In this embodiment, an organic compound film which emits red light is formed in the film formation chamber (A) 503 which is the first film formation chamber, and the film formation is performed in the second film formation chamber. A case where an organic compound film which emits green light is formed in the chamber (B) 507 and an organic compound film which emits blue light is formed in the film formation chamber (C) 509 which is the third film formation chamber will be described. However, the order of formation is not limited to this, and the film formation chamber (A) 503, the film formation chamber (B) 507,
In the film formation chamber (C) 509, any of an organic compound film which emits red light, an organic compound film which emits green light, and an organic compound film which emits blue light may be formed. Further, another film formation chamber may be provided to form an organic compound film which emits white light.

Next, reference numeral 510 denotes a film formation chamber for forming a conductive film (a metal film to be a cathode in this embodiment) to be an anode or a cathode of a light emitting element by a vapor deposition method.
Call. The film formation chamber (D) 510 includes an exhaust system 500h. The film forming chamber (C) 509 is hermetically shut off by a gate (not shown). Further, similarly to the film forming chamber (A) 503, a cleaning preliminary chamber 513g hermetically sealed off by a gate (not shown) is provided.

In this embodiment, a film formation chamber having the structure shown in FIG. 2 is provided as the film formation chamber (D) 510. Therefore, for the detailed operation of the film formation chamber (D) 510, the description of FIG.

In this embodiment, in the film formation chamber (D) 510, an Al—Li alloy film (an alloy film of aluminum and lithium) is formed as a conductive film serving as a cathode of a light emitting element.
Note that it is also possible to co-evaporate an element belonging to Group 1 or 2 of the periodic table and aluminum.

Further, a CVD chamber may be provided here, and an insulating film such as a silicon nitride film, a silicon oxide film, and a DLC film may be formed as a protective film (passivation film) of the light emitting element.
Note that in the case where a CVD chamber is provided, it is preferable to provide a gas purifier for purifying material gas used in the CVD chamber in advance.

Next, reference numeral 511 denotes a sealing chamber, which is an exhaust system 50.
0i. The film forming chamber (D) 510 is hermetically closed by a gate (not shown). In the sealing chamber 511, processing for finally sealing the light emitting element in the closed space is performed. This process is a process for protecting the formed light-emitting element from oxygen and moisture, and uses a method of mechanically encapsulating with a cover material or encapsulating with a thermosetting resin or an ultraviolet light curable resin.

As the cover material, glass, ceramics, plastic, or metal can be used, but when light is emitted to the cover material side, it must be translucent. Further, the cover material and the substrate on which the light emitting element is formed are attached to each other using a sealing material such as a thermosetting resin or an ultraviolet light curable resin, and the resin is cured by heat treatment or ultraviolet light irradiation treatment to form a closed space. To form It is also effective to provide a hygroscopic material represented by barium oxide in this closed space.

Further, the space between the cover member and the substrate on which the light emitting element is formed can be filled with a thermosetting resin or an ultraviolet light setting resin. In this case, it is effective to add a hygroscopic material represented by barium oxide to the thermosetting resin or the ultraviolet curable resin.

In the film forming apparatus shown in FIG.
Is provided with a mechanism for irradiating ultraviolet light (hereinafter, referred to as an ultraviolet light irradiation mechanism), and the ultraviolet light emitted from the ultraviolet light irradiation mechanism cures the ultraviolet curable resin. .

Finally, reference numeral 512 denotes an unload chamber, which is provided with an exhaust system 500j. The substrate on which the light emitting element is formed is taken out from here.

Further, the film forming apparatus shown in this embodiment may be provided with a function for exchanging organic compounds as shown in FIG. In FIG. 6, a substrate 6 is provided in a film forming chamber 601.
02 is provided. An organic compound for forming an organic compound film on the substrate is provided in the evaporation source 603. Here, the evaporation source 603 is provided via a gate 605 in a material exchange chamber 604 separated from a film formation chamber 601 provided with a substrate. Therefore, in the present embodiment, by closing the gate 605, the material exchange chamber 60 is closed.
4 is separated from the film forming chamber 601 and the inside of the material exchange chamber 604 in a vacuum state is returned to the atmospheric pressure by the exhaust system 606, and is then pulled out as shown in FIG. The organic compound provided in the evaporation source 604 can be added or replaced.

When the addition or replacement of the organic compound is completed, the material exchange chamber 604 is returned to its original state as shown in FIG. After the pressure state, the gate 60
By opening 5, the evaporation from the evaporation source 603 to the substrate 602 becomes possible.

The material exchange chamber 604 is provided with a heater for heating the exchanged material. By heating the material in advance, impurities such as water can be removed. The temperature added at this time is desirably 200 ° C. or less.

As described above, by using the film forming apparatus shown in FIG. 5 (or FIG. 6), it is not necessary to expose the light emitting element to the outside air until the light emitting element is completely sealed in the closed space. Can be manufactured.

[Embodiment 2] A film forming apparatus of the present invention will be described with reference to FIG. In FIG. 7, reference numeral 701 denotes a transfer chamber, and the transfer chamber 701 is provided with a transfer mechanism (A) 702, and transfers the substrate 703. The transfer chamber 701 is in a reduced pressure atmosphere, and is connected to each processing chamber by a gate. The transfer of the substrate to each processing chamber is performed by the transfer mechanism (A) 702 when the gate is opened. To reduce the pressure in the transfer chamber 701, an exhaust pump such as a dry pump, a mechanical booster pump, a turbo molecular pump (magnetic levitation type), or a cryopump can be used. To obtain this, a magnetically levitated turbo molecular pump is preferable.

Hereinafter, each processing chamber will be described.
Since the transfer chamber 701 has a reduced pressure atmosphere, the transfer chamber 7
All of the processing chambers directly connected to 01 are provided with exhaust pumps (not shown). As the exhaust pump, a dry pump, a mechanical booster pump, a turbo molecular pump (magnetic levitation type) or a cryopump described above is used, and a magnetic levitation type turbo molecular pump is also preferred here.

First, reference numeral 704 denotes a load chamber for setting (installing) a substrate. Load room 704 is gate 7
00a, the substrate 70 is connected to the transfer chamber 701.
A carrier (not shown) in which 3 is set is arranged. Note that the load chamber 704 also functions as a transfer chamber for transferring the substrate, which has been completed up to element formation, to the sealing chamber. The load room 704
The room may be distinguished between for carrying in the substrate and for transporting the substrate. The load chamber 704 includes the above-described exhaust pump and a purge line for introducing high-purity nitrogen gas or rare gas. Note that a turbo molecular pump is desirable as the exhaust pump. In addition, this purge line
A gas purifier is provided so that impurities (oxygen and water) of the gas introduced into the apparatus are removed in advance.

Note that in this embodiment, a substrate on which a transparent conductive film serving as an anode of a light-emitting element is formed is used as the substrate 703. In this embodiment, the substrate 703 is set on a carrier with the surface on which the film is to be formed facing downward. This is to make it easier to perform a face-down method (also referred to as a deposit-up method) when forming a film by a vapor deposition method later. The face-down method refers to a method in which a film is formed in a state where a film formation surface of a substrate faces downward. According to this method, adhesion of dust and the like can be suppressed.

Next, reference numeral 705 denotes an alignment chamber for aligning the metal mask and aligning the metal mask with the substrate formed up to the anode or the cathode (the anode in this embodiment) of the light emitting element. 705 is connected to the transfer chamber 701 by a gate 700b. Each time a different organic compound film is formed, alignment of the metal mask and alignment of the metal mask with the substrate are performed in the alignment chamber. In addition, by providing a CCD (Charge Coupled Device) known as an image sensor in the alignment chamber 705, the alignment between the substrate and the metal mask can be accurately performed when film formation is performed using the metal mask. Make it possible. For the metal mask alignment method,
FIG. 4 may be used.

Further, an auxiliary cleaning chamber 722a is connected to the alignment chamber 705. The configuration of the cleaning preparatory chamber 722a is as shown in FIG. First, there is a μ-wave oscillator 731 that generates a μ-wave,
The generated microwaves are sent to the plasma discharge tube 733 through the waveguide 732. Note that the microwave oscillator 731 used here emits a microwave of about 2.45 GHz.
In addition, a reactive gas is supplied to the plasma discharge tube 733 from a gas introduction tube 734. Here, NF ₃ is used as the reactive gas. However, another reactive gas such as CF ₄ or ClF ₃ may be used.

In the plasma discharge tube 733, the reactive gas is decomposed by the microwave to generate radicals.
These radicals pass through a gas introduction pipe 734 and are introduced into an alignment chamber 705 connected via a gate (not shown). Note that the plasma discharge tube 733 is preferably provided with a reflector 735 in order to efficiently supply microwaves.

The alignment chamber 705 is provided with a metal mask to which an organic compound film has adhered. Then, the cleaning preliminary chamber 722a and the alignment chamber 70
By opening a gate (not shown) provided between the gates 5, the radicals can be introduced into the alignment chamber 705. Thereby, cleaning of the metal mask can be performed.

By using the microwave plasma, the radicalization of the reactive gas can be performed with high efficiency, and the probability of generation of impurities such as by-products is low. Further, since the mechanism is different from that of normal radical generation, generated radicals are not accelerated, and furthermore, radicals are not generated inside the film formation chamber, thereby preventing damage to the inside of the film formation chamber and the metal mask due to plasma. be able to.

It is to be noted that cleaning the alignment chamber by using such a method is one of preferred modes, and is not limited to this method. Therefore, dry cleaning may be performed by introducing a reactive gas into the film formation chamber and generating plasma in the film formation chamber, or may be performed by sputtering by introducing Ar gas or the like. good.

Next, reference numeral 706 denotes a film forming chamber for forming an organic compound film by a vapor deposition method, which is called a film forming chamber (A).
The film forming chamber (A) 706 is connected to the transfer chamber 7 through the gate 700c.
01. In this embodiment, a film formation chamber having the structure shown in FIG.

In this embodiment, a first organic compound film which emits red light is formed in the film forming section 707 in the film forming chamber (A) 706. A plurality of evaporation sources are provided in the film formation chamber (A) 706. Specifically, a first evaporation source including an organic compound having a hole-injecting property and an organic compound having a hole-transporting property are provided. A second evaporation source provided, a third evaporation source provided with an organic compound having a light emitting property, and a fourth evaporation source provided with an organic compound having an electron transporting property.

By sequentially depositing these organic compounds, an organic compound film composed of regions having functions of hole injection, hole transport, light emission and electron transport is formed on the anode. can do.

In this embodiment, a mixed region is formed at the interface between the different functional regions by simultaneously depositing the organic compounds forming both functional regions. That is, mixed regions are formed at the interface between the hole-injecting region and the hole-transporting region, the interface between the hole-transporting region and the light-emitting region, and the interface between the light-emitting region and the electron-transporting region, respectively. .

Here, a case was described in which four types of organic compounds having different functions were provided in four evaporation sources as the first organic compound film, and these were sequentially vapor-deposited to form an organic compound film. However, the present invention is not limited to this, and may be any plural number. Further, one kind of organic compound is not necessarily required to be provided in one evaporation source, and a plurality of kinds may be used. For example, in addition to one kind of material provided as a light-emitting organic compound in the evaporation source, another organic compound which can be a dopant may be provided together. Note that as the organic compound which has these multiple functions and forms an organic compound film which emits red light, the organic compound shown in Example 1 can be used, but known materials can be freely used in combination. Is also good.

The film formation chamber (A) 706 has a gate 700
g to the material exchange chamber 714. Note that the material exchange chamber 714 is provided with a heater for heating the exchanged organic compound. By heating the organic compound in advance, impurities such as water can be removed. The temperature added at this time is desirably 200 ° C. or less. In addition, since the material exchange chamber 714 is provided with an exhaust pump capable of reducing the pressure inside, the inside of the material exchange chamber 714 is reduced after adding or exchanging an organic compound from the outside and performing heat treatment. Then, when the same pressure state as in the film formation chamber is reached, the gate 700g is opened, so that an organic compound can be provided in the evaporation source inside the film formation chamber. In addition,
The organic compound is provided in an evaporation source in the film formation chamber by a transport mechanism or the like.

Note that the description of FIG. 2 may be referred to for the film forming process in the film forming chamber (A) 706.

Note that, similarly to the alignment chamber 705, a cleaning preliminary chamber 722b is connected to the film forming chamber (A) 706 via a gate (not shown). The specific configuration is the same as that of the cleaning preliminary chamber 722a.
The radicals generated in the cleaning preparatory chamber 722b are introduced into the film forming chamber (A) 706, thereby forming the film forming chamber (A).
Organic compounds and the like attached to the inside of the 706 can be removed.

Next, reference numeral 708 denotes a film forming chamber for forming a second organic compound film by a vapor deposition method, which is called a film forming chamber (B). The film formation chamber (B) 708 is connected to the transfer chamber 701 through a gate 700d. In this embodiment, the film forming chamber (B) 7
As 08, a film formation chamber having the structure shown in FIG. 2 is provided. In this embodiment, an organic compound film which emits green light is formed in a film formation section 709 in the film formation chamber (B) 708.

A plurality of evaporation sources are provided in the film formation chamber (B) 708. Specifically, a first evaporation source having an organic compound having a hole-transporting property is provided. A second evaporation source having a compound, a third evaporation source having a blocking organic compound, and a fourth evaporation source having an electron transporting organic compound are provided.

By depositing these organic compounds in order, it is possible to form an organic compound film composed of regions having functions of hole transport, light emission, blocking and electron transport on the anode. it can.

In this embodiment, a mixed region is formed at the interface between different functional regions by simultaneously evaporating the organic compound forming both functional regions. That is, mixed regions are formed at the interface between the hole transporting region and the light emitting region, the interface between the light emitting region and the blocking region, and the interface between the blocking region and the electron transporting region.

Here, a case has been described in which four types of organic compounds having different functions are provided in four evaporation sources as the second organic compound film, and these are sequentially vapor-deposited to form an organic compound film. However, the present invention is not limited to this, and may be any plural number. Further, one kind of organic compound is not necessarily required to be provided in one evaporation source, and a plurality of kinds may be used. For example, in addition to one kind of material provided as a light-emitting organic compound in the evaporation source, another organic compound which can be a dopant may be provided together. As the organic compound having these multiple functions and forming an organic compound film which emits green light, the organic compound shown in Embodiment 1 may be used, but any known material may be freely used in combination. Can also.

The film formation chamber (B) 708 has a gate 700
h, it is connected to the material exchange chamber 715. The material exchange chamber 715 is provided with a heater for heating the exchanged organic compound. By heating the organic compound in advance, impurities such as water can be removed. The temperature added at this time is desirably 200 ° C. or less. Further, since the material exchange chamber 715 is provided with an exhaust pump capable of reducing the pressure inside, the inside of the material exchange chamber 715 is reduced pressure after an organic compound is introduced from the outside. Then, when the same pressure state as in the film formation chamber is reached, the gate 700h is opened, so that an organic compound can be provided in the evaporation source inside the film formation chamber. Note that the organic compound is provided in an evaporation source in the film formation chamber by a transport mechanism or the like.

For the film forming process in the film forming chamber (B) 708, the description of FIG. 2 may be referred to.

Note that a cleaning preparatory chamber 722c is also connected to the film forming chamber (B) 708 via a gate (not shown), like the alignment chamber 705. The specific configuration is the same as that of the cleaning preliminary chamber 722a.
The radicals generated in the cleaning preparatory chamber 722c are introduced into the film forming chamber (B) 708, so that the film forming chamber (B)
An organic compound or the like attached to the inside of the 708 can be removed.

Next, reference numeral 710 denotes a film forming chamber for forming a third organic compound film by a vapor deposition method, which is called a film forming chamber (C). The film formation chamber (C) 710 is connected to the transfer chamber 701 via the gate 700e. In this embodiment, the film forming chamber (C) 7
As 10, a film forming chamber having the structure shown in FIG. 2 is provided. In this embodiment, an organic compound film which emits blue light is formed in a film forming section 711 in the film forming chamber (C) 710.

A plurality of evaporation sources are provided in the film formation chamber (C) 710. Specifically, a first evaporation source having a hole-injecting organic compound and an organic light-emitting organic compound are provided. A second evaporation source having a compound, a third evaporation source having a blocking organic compound, and a fourth evaporation source having an electron transporting organic compound are provided.

By sequentially depositing these organic compounds, it is possible to form an organic compound film comprising a region having functions of hole injection, light emission, blocking and electron transport on the anode. it can.

In this embodiment, a mixed region is formed at the interface between different functional regions by simultaneously depositing the organic compounds forming both functional regions. That is, mixed regions are formed at the interface between the hole injection region and the light emitting region, the interface between the light emitting region and the blocking region, and the interface between the blocking region and the electron transporting region.

Here, the case where four types of organic compounds having different functions are provided in four evaporation sources as the third organic compound film, and these are sequentially vapor-deposited to form an organic compound film has been described. However, the present invention is not limited to this, and may be any plural number. Further, one kind of organic compound is not necessarily required to be provided in one evaporation source, and a plurality of kinds may be used. For example, in addition to one kind of material provided as a light-emitting organic compound in the evaporation source, another organic compound which can be a dopant may be provided together. Note that as the organic compound which has these multiple functions and forms an organic compound film which emits blue light, the organic compound shown in Example 1 can be used, but known materials can be freely used in combination. Can also

The film forming chamber (C) 710 has a gate 700
It is connected to the material exchange chamber 716 via i. Note that the material exchange chamber 716 is provided with a heater for heating the exchanged organic compound. By heating the organic compound in advance, impurities such as water can be removed. The temperature added at this time is desirably 200 ° C. or less. Further, since the material exchange chamber 716 is provided with an exhaust pump capable of reducing the pressure inside, the internal pressure is reduced after the organic compound is introduced from the outside. Then, when the same pressure state as in the film formation chamber is reached, the gate 700i is opened, so that an organic compound can be provided in the evaporation source inside the film formation chamber. Note that the organic compound is provided in an evaporation source in the film formation chamber by a transport mechanism or the like.

Note that the description of FIG. 2 may be referred to for the film forming process in the film forming chamber (C) 710.

Note that a cleaning preparatory chamber 722d is also connected to the film forming chamber (C) 710 via a gate (not shown), like the alignment chamber 705. The specific configuration is the same as that of the cleaning preliminary chamber 722a.
The radicals generated in the cleaning preparatory chamber 722d are introduced into the film forming chamber (C) 710, thereby forming the film forming chamber (C).
Organic compounds and the like attached to the inside of 710 can be removed.

Next, reference numeral 712 denotes a film forming chamber for forming a conductive film to be an anode or a cathode of the light emitting element (a metal film to be a cathode in this embodiment) by a vapor deposition method.
Call. The film formation chamber (D) 712 is connected to the transfer chamber 701 through the gate 700f. In this embodiment, an Al—Li alloy film (an alloy film of aluminum and lithium) is formed as a conductive film serving as a cathode of a light-emitting element in a film formation portion 713 in a film formation chamber (D) 712. In addition, 1 of the periodic table
It is also possible to co-evaporate an element belonging to Group 2 or Group 2 with aluminum. Co-evaporation refers to an evaporation method in which an evaporation source is simultaneously heated and different substances are mixed in a film formation stage.

The film forming chamber (D) 712 has a gate 700
It is connected to the material exchange chamber 717 through j. The material exchange chamber 717 is provided with a heater for heating the exchanged conductive material. By heating the conductive material in advance, impurities such as water can be removed. The temperature added at this time is desirably 200 ° C. or less. In addition, since the material exchange chamber 717 is provided with an exhaust pump capable of reducing the pressure inside, the inside of the material exchange chamber 717 is reduced pressure after introducing a conductive material from the outside. Then, when the pressure becomes the same as that in the film formation chamber, the gate 700j is opened, and the evaporation source in the film formation chamber can be provided with a conductive material.

Note that a cleaning preparatory chamber 722e is also connected to the film forming chamber (D) 712 via a gate (not shown), like the alignment chamber 705. The specific configuration is the same as that of the cleaning preliminary chamber 722a.
The radicals generated in the cleaning preparatory chamber 722e are introduced into the film forming chamber (D) 712 to form the film forming chamber (D).
A conductive material or the like attached to the inside of the 712 can be removed.

The film forming chamber (A) 706 and the film forming chamber (B)
Each of the film formation chambers 708, 710, and 712 is provided with a mechanism for heating the film formation chamber. Thus, part of impurities in the deposition chamber can be removed.

Further, as an exhaust pump provided in these film forming chambers, a dry pump, a mechanical booster pump, a turbo molecular pump (magnetic levitation type), a cryopump, or the like can be used. In this embodiment, a cryopump is used. And a dry pump are preferred.

The film forming chamber (A) 706 and the film forming chamber (B)
708, a film formation chamber (C) 710 and a film formation chamber (D) 712
Is reduced in pressure by an exhaust pump. Note that the ultimate vacuum degree at this time is desirably 10 ⁻⁶ Pa or more. For example, a cryopump with a pumping speed of 10000 l / s (H ₂ O) is used to set the surface area of the inside of the film formation chamber to 10 m ^2. ,
Leakage amount of the film forming chamber portion when the inner deposition chamber formed of ^{aluminum, 4.1 × 10 -7 Pa · m} 3 · 20 hours
must be less than or equal to s ⁻¹ . In order to obtain such a degree of vacuum, it is effective to reduce the surface area by electropolishing the inside of the film formation chamber.

Next, reference numeral 718 denotes a sealing chamber (also referred to as a sealing chamber or a glove box), which is connected to the load chamber 704 via a gate 700k. In the sealing chamber 718, a process for finally sealing the light emitting element in the closed space is performed. This process is a process for protecting the formed light-emitting element from oxygen and moisture, and uses a method of mechanically encapsulating with a cover material or encapsulating with a thermosetting resin or an ultraviolet light curable resin.

As the cover material, glass, ceramics, plastic or metal can be used, but when light is emitted to the cover material side, it must be translucent. Further, the cover material and the substrate on which the light emitting element is formed are attached to each other using a sealant such as a thermosetting resin or an ultraviolet light curable resin, and the resin is cured by heat treatment or ultraviolet light irradiation treatment to form a closed space. To form It is also effective to provide a moisture absorbent typified by barium oxide in this closed space.

It is also possible to fill the space between the cover member and the substrate on which the light emitting element is formed with a thermosetting resin or an ultraviolet curable resin. In this case, it is effective to add a hygroscopic material represented by barium oxide to the thermosetting resin or the ultraviolet curable resin.

In the film forming apparatus shown in FIG.
Is provided with a mechanism (hereinafter, referred to as an ultraviolet light irradiation mechanism) 719 for irradiating ultraviolet light into the inside of the device. The ultraviolet light emitted from the ultraviolet light irradiation mechanism 719 cures the ultraviolet light curable resin. ing. Also, the sealing chamber 718
It is also possible to reduce the pressure inside by installing an exhaust pump. When the encapsulation step is performed mechanically by a robot operation, mixing under oxygen or moisture can be prevented by performing the operation under reduced pressure. Note that, specifically, it is desirable that the concentration of oxygen or water be 0.3 ppm or less. Conversely, the inside of the sealing chamber 718 can be pressurized. In this case, pressurization is performed while purging with a high-purity nitrogen gas or a rare gas to prevent entry of oxygen or the like from outside air.

Next, a delivery room (pass box) 720 is connected to the sealing room 718. A transfer mechanism (B) 721 is provided in the delivery chamber 720, and transports the substrate in which the light emitting element is completely sealed in the sealing chamber 718 to the delivery chamber 720. The delivery chamber 720 can also be reduced in pressure by attaching an exhaust pump. The transfer chamber 720 is a facility for preventing the sealing chamber 718 from being directly exposed to the outside air, and takes out the substrate therefrom. In addition, a member supply chamber (not shown) for supplying a member used in the sealing chamber can be provided.

Although not shown in this embodiment, a compound containing silicon such as silicon nitride or silicon oxide or a DLC containing carbon on these compounds is formed after forming the light emitting element.
An insulating film in which (Diamond Like Carbon) films are stacked may be formed on the light emitting element. DLC (Diamond Li
The “ke Carbon” film is an amorphous film in which a diamond bond (sp ³ bond) and a graphite bond (SP ² bond) are mixed. In this case, a plasma is generated by applying a self-bias, and a thin film is formed by plasma discharge decomposition of a raw material gas.
n) What is necessary is just to provide the film-forming chamber provided with the apparatus.

In addition, CVD (chemical vapor depositio)
n) In a film forming chamber equipped with an apparatus, oxygen (O ₂ ), hydrogen (H ₂ ), methane (CH ₄ ), ammonia (NH ₃ ), and silane (SiH ₄ ) can be used. Also, CVD
The device has parallel plate type electrodes and one RF power source.
A frequency of 3.56 MHz may be used.

[0179] Further, a film formation chamber in which a film is formed by a sputtering method (also referred to as a sputtering method) can be provided. This is because, when an anode is formed after an organic compound film is formed on a cathode of a light emitting element, film formation by sputtering is effective. That is, it is effective when the pixel electrode is a cathode. In addition, the inside of the deposition chamber at the time of deposition is
By setting an atmosphere in which oxygen is added to argon, the oxygen concentration in the formed film can be controlled, and a low-resistance film with high transmittance can be formed. Further, like the other film formation chambers, it is desirable that the film formation chamber be separated from the transfer chamber by a gate.

[0180] In the film formation chamber where sputtering is performed, a mechanism for controlling the temperature of the film formation substrate may be provided.
Note that the film formation substrate is preferably maintained at 20 to 150 ° C. Further, as an exhaust pump provided in the film forming chamber,
A dry pump, a mechanical booster pump, a turbo molecular pump (magnetic levitation type), a cryopump, or the like can be used. In this embodiment, a turbo molecular pump (magnetic levitation type) and a dry pump are preferable.

As described above, by using the film forming apparatus shown in FIG. 7, it is not necessary to expose the light-emitting element to the outside air until the light-emitting element is completely sealed in the closed space, so that a highly reliable light-emitting device can be manufactured. It becomes possible.

[Embodiment 3] In this embodiment, a description will be given of a film formation apparatus which is different from the in-line type film formation apparatus shown in Embodiment 1 by using a substrate transfer method and a structure of a film formation chamber with reference to FIG. .

In FIG. 8, a substrate 804 loaded into a load chamber 800 is transferred to a first alignment unit 801 connected via a gate (not shown). The substrate 804 is aligned by the method described with reference to FIG. 4, and is fixed to the holder 802 together with the metal mask 803.

Then, the substrate 804 is transferred to the first film forming unit 805 together with the holder 802. Note that the first alignment unit 801 and the first film forming unit 805 are connected without using a gate, and have the same space. Therefore, in this embodiment, as a means that can freely move between the first alignment unit 801 and the first film forming unit 805,
A rail 812 is provided, and the holder 80
2 moves to perform the respective processing. The processing position at the time of alignment and film formation is controlled by a control mechanism of the holder 802.

Then, in the first film forming section 805, different organic compounds are vapor-deposited by a plurality of evaporation sources 806 respectively provided to form a first organic compound film. Note that this moving means is used to form the second alignment layer 807 to form the second organic compound film.
The same applies to the case of transporting to the second film forming unit 808.

Further, when forming the third organic compound, the third alignment unit 809 and the third film forming unit 8
10 is similarly conveyed.

As described above, in this embodiment, three types of organic compound films can be formed in the same space. The third film forming unit 810 is connected to an unload chamber 811 via a gate (not shown), and can take out a substrate after film formation.

The processing method in the alignment unit and the film forming unit in the present embodiment may be the same as that described in the alignment room and the film forming room in the first embodiment.

Further, in this embodiment, providing a partition between the alignment section and the film forming section to separate them from each other allows the organic compound scattered from the evaporation source to scatter outside the film forming section during film formation. Can be prevented.

Also in the film forming apparatus of this embodiment, it is preferable to provide a cleaning preliminary chamber 813 to clean the film forming chamber and the metal mask.

By forming a plurality of organic compound films in the same space by using the film forming apparatus described above, movement in forming different organic compound films is facilitated.
Processing time can be reduced.

In the film forming apparatus shown in this embodiment, three kinds of organic compounds having a plurality of functions are continuously deposited in a film forming chamber on a substrate on which an anode or a cathode of a light emitting element is formed. Can form a membrane,
Further, a film formation chamber for forming a conductive film may be provided so that a cathode or an anode of a light-emitting element can be formed continuously. In addition, as a conductive film, in the case of forming a cathode, aluminum and an element belonging to Group 1 or 2 of the periodic table and aluminum in addition to an Al—Li alloy film (an alloy film of aluminum and lithium) are co-deposited. In the case of forming an anode, indium oxide, tin oxide, zinc oxide, or a compound thereof (ITO or the like) may be used.

[0193] In addition, a treatment chamber for sealing the manufactured light-emitting element can be provided.

[Embodiment 4] In this embodiment, a light emitting device manufactured using the film forming apparatus of the present invention will be described. FIG.
1 is a cross-sectional view of an active matrix light emitting device.
Although a thin film transistor (hereinafter, referred to as “TFT”) is used as the active element, a MOS transistor may be used.

Also, a top gate type TFT is used as the TFT.
(Specifically, a planar type TFT) is exemplified, but a bottom gate type TFT (typically, an inverted stagger type TFT) can also be used.

In FIG. 9, reference numeral 901 denotes a substrate. Here, a substrate that transmits visible light is used. Specifically, a glass substrate, a quartz substrate, a crystallized glass substrate, or a plastic substrate (including a plastic film) may be used. Note that the substrate 901 includes an insulating film provided on the surface.

A pixel portion 911 and a driving circuit 912 are provided over a substrate 901. First, the pixel portion 911 will be described.

The pixel section 911 is an area for displaying an image. A plurality of pixels are present on the substrate, and a TFT (hereinafter, referred to as “current control TFT”) 902 for controlling a current flowing through the light emitting element is provided in each pixel, and a pixel electrode (anode) 90.
3. An organic compound film 904 and a cathode 905 are provided. Reference numeral 913 denotes a TFT for controlling a voltage applied to the gate of the current control TFT (hereinafter, referred to as a “switching TFT”).

As the current controlling TFT 902, a p-channel TFT is preferably used here. Although it is possible to use an n-channel TFT, when a current control TFT is connected to the anode of the light emitting element as shown in FIG. 9, the p-channel TFT can reduce power consumption.
However, the switching TFT 913 is an n-channel type TFT.
FT or p-channel TFT may be used.

The pixel electrode 903 is electrically connected to the drain of the current controlling TFT 902. In this embodiment, the work function of the material of the pixel electrode 903 is 4.5.
Since a conductive material of about 5.5 eV is used, the pixel electrode 90
Reference numeral 3 functions as an anode of the light emitting element. As the pixel electrode 903, typically, indium oxide, tin oxide, zinc oxide, or a compound thereof (ITO or the like) may be used.
An organic compound film 904 is provided over the pixel electrode 903.

Further, a cathode 905 is provided on the organic compound film 904. As a material of the cathode 905,
It is desirable to use a conductive material having a work function of 2.5 to 3.5 eV. As the cathode 905, typically, a conductive film containing an alkali metal element or an alkaline earth metal element,
A conductive film containing aluminum, or a conductive film in which aluminum, silver, or the like is stacked over the conductive film may be used.

The pixel electrode 903 and the organic compound film 90
4 and a light emitting element 914 including a cathode 905 are covered with a protective film 906. The protective film 906 is formed of the light emitting element 9
It is provided to protect 14 from oxygen and water. As a material of the protective film 906, silicon nitride, silicon nitride oxide, aluminum oxide, tantalum oxide, or carbon (specifically, diamond-like carbon) is used.

Next, the drive circuit 912 will be described.
The drive circuit 912 is an area for controlling timing of signals (gate signals and data signals) transmitted to the pixel portion 911, and includes a shift register, a buffer, a latch, an analog switch (transfer gate), or a level shifter. FIG. 9 shows an n-channel TFT 907 and a p-channel TFT 907 as basic units of these circuits.
3 shows a CMOS circuit composed of FT908.

The circuit configuration of the shift register, buffer, latch, analog switch (transfer gate) or level shifter may be a known one. In FIG. 9, the pixel portion 911 and the driving circuit 9 are provided on the same substrate.
Although 12 is provided, an IC or an LSI can be electrically connected without providing the drive circuit 912.

In FIG. 9, the pixel electrode (anode) 903 is electrically connected to the current controlling TFT 902.
A structure in which the cathode is connected to the current controlling TFT may be employed. In that case, the pixel electrode 903 may be formed using the same material as the cathode 905, and the cathode may be formed using the same material as the pixel electrode (anode) 903. In that case, the current control TFT
Is preferably an n-channel TFT.

In this embodiment, a shape having an eave (hereinafter, referred to as an eave structure) including a wiring 909 and a separation portion 910 is provided. The “eave structure” including the wiring 909 and the separation portion 910 as shown in FIG.
And a material (for example, metal nitride) having a lower etch rate than the metal forming the separation portion 910 can be formed by stacking and etching. With this shape, a short circuit between the pixel electrode 903 and the wiring 909 with the cathode 905 can be prevented. Note that in this embodiment, the cathode 905 on the pixel is formed in a stripe shape (similar to a passive matrix cathode), unlike a normal active matrix light emitting device.

Here, the appearance of the active matrix light emitting device shown in FIG. 9 is shown in FIG. Note that FIG.
10A shows a top view, and FIG.
FIG. 2A is a cross-sectional view taken along line AA ′. Also,
Reference is made to the reference numerals used in FIG.

Reference numeral 1001 shown by a dotted line denotes a source side driving circuit, 1002 denotes a pixel portion, and 1003 denotes a gate side driving circuit. Reference numeral 1004 denotes a cover material, 1005 denotes a sealant, and a space 10 is surrounded by the sealant 1005.
07 is provided.

Note that the wiring 1008 is connected to the source side driving circuit 1
001 and a wiring for transmitting a signal input to the gate side driving circuit 1003, and an FP serving as an external input terminal
A video signal and a clock signal are received from a C (flexible print circuit) 1009. Here, F
Although only a PC is shown, a printed wiring board (PWB) may be attached to this FPC. The light-emitting device in this specification includes not only a light-emitting module in which an FPC or PWB is attached to a light-emitting panel but also a light-emitting module in which an IC is mounted.

Next, a cross-sectional structure will be described with reference to FIG. Above the substrate 901, a pixel portion 1002,
A gate side driving circuit 1003 is formed, and the pixel portion 1
002 is formed by a plurality of pixels including a current controlling TFT 902 and a pixel electrode 903 electrically connected to its drain. The gate side driver circuit 1003 is formed using a CMOS circuit in which an n-channel TFT 907 and a p-channel TFT 908 are combined.

[0211] The pixel electrode 903 functions as an anode of the light emitting element. Further, the interlayer insulating film 1 is provided on both ends of the pixel electrode 903.
The organic compound film 904 and the cathode 905 of the light emitting element are formed on the pixel electrode 903.

The cathode 905 also functions as a common wiring for a plurality of pixels.
9 is electrically connected. Further, the pixel portion 1002
All the elements included in the gate side driver circuit 1003 are covered with the protective film 906.

Also, the cover material 1 is
004 is attached. The cover material 1004
A spacer made of a resin film may be provided to secure an interval between the light emitting element and the light emitting element. The inside of the sealant 1005 is a closed space, and is filled with an inert gas such as nitrogen or argon. It is also effective to provide a hygroscopic material represented by barium oxide in this closed space.

As the cover material, glass, ceramics, plastic or metal can be used, but when light is emitted to the cover material side, it must be translucent. In addition, as plastic, FRP
(Fiberglass-Reinforced Plastics), PVF (polyvinyl fluoride), mylar, polyester or acrylic can be used.

By enclosing the light emitting element 914 formed on the substrate as described above using the cover material 1004 and the sealant 1005, the light emitting element 914 can be completely shut off from the outside, and the moisture, oxygen and the like can be completely blocked from the outside. Invasion of a substance which promotes deterioration of the organic compound film due to oxidation can be prevented. Therefore, a highly reliable light-emitting device can be obtained.

A light emitting device having a structure different from that described with reference to FIG. 9 will be described with reference to FIG.
Switching TFT 1 included in pixel portion 1511
The configuration of the TFT 513 and the current control TFT 1502 and the configuration of the p-channel TFT 1508 and the n-channel TFT 1507 in the driver circuit 1512 are the same as those in FIG. The difference is a method for forming a light-emitting element 1514 having an anode 1503, an organic compound film 1504, and a cathode 1505.

In FIG. 9, the film is formed by the vapor deposition method. However, in this embodiment, the structure as shown in FIG. 15 is obtained by using the method of depositing an ionized organic compound (ion plating method). Was formed. Note that such a structure is preferable because the emitted light can be reflected. Further, the light-emitting element 1514 is covered with a protective film 1506 formed using an insulating film containing silicon.

Note that the light emitting device in this embodiment can form a film by using the film forming apparatus described in Embodiments 1 to 3.

[Embodiment 5] In this embodiment, a passive type (simple matrix type) manufactured by using the film forming apparatus of the present invention.
The light emitting device will be described. FIG. 11 is used for the description. In FIG. 11, 1101 is a glass substrate, 1102
Is an anode made of a transparent conductive film. In this embodiment, a compound of indium oxide and zinc oxide is formed as a transparent conductive film by an evaporation method. Although not shown in FIG. 11, a plurality of anodes are arranged in stripes in a direction parallel to the plane of the drawing.

The anodes 11 arranged in a stripe pattern
02 so as to intersect with the cathode partition (1103a, 1103a,
103b) is formed. Cathode partition (1103a, 11
03b) is formed in a direction perpendicular to the paper surface.

Next, an organic compound film 1104 is formed. The organic compound film 1104 formed here has a plurality of functional regions by combining a plurality of organic compounds having a hole-injecting property, a hole-transporting property, a light-emitting property, a blocking property, an electron-transporting property, or an electron-injecting property. Should be formed.

In this embodiment, a mixed region is formed between the functional regions. Note that the method described in the embodiment may be used for manufacturing the mixed region.

Further, since these organic compound films 1104 are formed along the grooves formed by the cathode partitions (1103a, 1103b), they are arranged in stripes in a direction perpendicular to the paper surface.

Thereafter, the plurality of cathodes 1105 are arranged in a stripe shape such that the longitudinal direction is perpendicular to the plane of the paper and is orthogonal to the anode 1102. In this embodiment, the cathode 1105 is made of MgAg, and is formed by an evaporation method. Although not shown, the cathode 1105
The wiring is drawn out to a portion where the FPC will be attached later so that a predetermined voltage is applied. Further, after forming the cathode 1105, a silicon nitride film is provided as the protective film 1106.

[0225] The light emitting element 1111 is formed over the substrate 1101 as described above. In this embodiment, since the lower electrode is the light-transmitting anode 1102, light generated in the organic compound film is emitted to the lower surface (the substrate 1101 side). However, the structure of the light emitting element 1111 may be reversed, and the lower electrode may be a light-shielding cathode. In that case, light generated in the organic compound film 1104 is emitted to the upper surface (the side opposite to the substrate 1101).

Next, a ceramic substrate is prepared as a cover material 1107. In the structure of the present embodiment, a ceramic substrate was used because the light-shielding property was sufficient. Of course, when the structure of the light emitting element 1111 was reversed as described above, the cover material 11 was used.
07 is preferably light-transmitting, and therefore a substrate made of plastic or glass is preferably used.

The cover material 1107 thus prepared is bonded by a sealant 1109 made of an ultraviolet curable resin. The inside 1108 of the sealant 1109 is a closed space, and is filled with an inert gas such as nitrogen or argon. In addition, this sealed space 110
It is also effective to provide a moisture absorbing material typified by barium oxide in 8. Finally, anisotropic conductive film (FPC) 1
The passive type light emitting device is completed by attaching 110.
Note that the light emitting device described in this embodiment can be manufactured using any of the film forming apparatuses described in Embodiments 1 to 3.

[Embodiment 6] Since a light emitting device using a light emitting element is of a self-luminous type, it has better visibility in a bright place and a wider viewing angle than a liquid crystal display device. Therefore, various electric appliances can be completed using the light emitting device of the present invention.

Electric appliances using the light emitting device manufactured according to the present invention include a video camera, a digital camera, a goggle type display (head mounted display), a navigation system, a sound reproducing device (car audio, audio component, etc.), a notebook type personal computer. Computers, game consoles, personal digital assistants (mobile computers, mobile phones, portable game consoles, electronic books, etc.),
An image reproducing device provided with a recording medium (specifically, a device provided with a display device capable of reproducing a recording medium such as a digital video disk (DVD) and displaying the image) is provided. In particular, in a portable information terminal in which a screen is often viewed from an oblique direction, since a wide viewing angle is regarded as important, it is preferable to use a light emitting device having a light emitting element. FIG. 12 shows specific examples of these electric appliances.

FIG. 12A shows a display device,
01, a support base 2002, a display unit 2003, a speaker unit 2004, a video input terminal 2005, and the like. The display device is manufactured by using the light emitting device manufactured according to the present invention for the display portion 2003. Since a light-emitting device having a light-emitting element is a self-luminous type, it does not require a backlight and can have a thinner display portion than a liquid crystal display device. The display device includes all information display devices for personal computers, TV broadcast reception, advertisement display, and the like.

FIG. 12B shows a digital still camera, which includes a main body 2101, a display portion 2102, an image receiving portion 2103,
An operation key 2104, an external connection port 2105, a shutter 2106, and the like are included. The display device is manufactured by using the light-emitting device manufactured according to the present invention for the display portion 2102.

FIG. 12C shows a notebook personal computer, which includes a main body 2201, a housing 2202, and a display portion 2.
203, keyboard 2204, external connection port 220
5, including a pointing mouse 2206 and the like. The display device is manufactured by using the light emitting device manufactured according to the present invention for the display portion 2203.

FIG. 12D shows a mobile computer, which includes a main body 2301, a display portion 2302, and a switch 230.
3, an operation key 2304, an infrared port 2305, and the like. The light emitting device manufactured according to the present invention was
02.

FIG. 12E shows a portable image reproducing apparatus (specifically, a DVD reproducing apparatus) provided with a recording medium, and includes a main body 2401, a housing 2402, a display portion A 2403, a display portion B 2404, and a recording medium ( DVD, etc.) reading unit 240
5, operation keys 2406, a speaker unit 2407, and the like. The display portion A 2403 mainly displays image information, and the display portion B 2404 mainly displays text information.
03, 2404. In addition,
The image reproducing apparatus provided with the recording medium includes a home game machine and the like.

FIG. 12F shows a goggle-type display (head-mounted display).
1, including a display unit 2502 and an arm unit 2503. The light-emitting device manufactured according to the present invention is used for the display portion 2502.

FIG. 12G) shows a video camera,
Reference numeral 601, display unit 2602, housing 2603, external connection port 2604, remote control receiving unit 2605, image receiving unit 260
6, a battery 2607, a voice input unit 2608, operation keys 2609, an eyepiece 2610, and the like. The light-emitting device manufactured according to the present invention is used for the display portion 2602.

[0237] Here, FIG. 12H illustrates a mobile phone, which includes a main body 2701, a housing 2702, a display portion 2703, a voice input portion 2704, a voice output portion 2705, operation keys 2706,
An external connection port 2707, an antenna 2708, and the like are included.
The light emitting device manufactured according to the present invention is connected to its display portion 2703.
It is manufactured by using for. The display portion 2703
By displaying white characters on a black background, power consumption of a mobile phone can be reduced.

If the emission luminance of the organic material is increased in the future, the light including the output image information can be enlarged and projected by a lens or the like and used for a front-type or rear-type projector.

[0239] The above-mentioned electric appliances are available on the Internet or C
Information distributed through an electronic communication line such as an ATV (cable television) is frequently displayed, and in particular, opportunities to display moving image information are increasing. Since the response speed of the organic material is extremely high, the light-emitting device is preferable for displaying moving images.

[0240] In the light-emitting device, light-emitting portions consume power. Therefore, it is preferable to display information so that light-emitting portions are reduced as much as possible. Therefore, when a light emitting device is used for a portable information terminal, particularly a display portion mainly for character information such as a mobile phone or a sound reproducing device, the light emitting portion is driven to form character information with a non-light emitting portion as a background. Is preferred.

As described above, the applicable range of the light emitting device manufactured using the film forming apparatus of the present invention is extremely wide, and it can be used for electric appliances in all fields. Further, the electric appliance of this embodiment can be completed by using the light emitting device shown in Embodiment 4 or 5 formed by the film forming apparatus shown in Embodiments 1 to 3 for its display portion. .

[Embodiment 7] In this embodiment, the structure of a pixel portion of a light emitting device formed by the film forming apparatus of the present invention will be described.

FIG. 16A is a top view of a part of the pixel portion 1911. FIG. The pixel portion 1911 includes a plurality of pixels 19.
12 (1912 (a) to 1912 (C)). The top view shown here shows a state in which an insulating layer 1902 formed to cover an edge of a pixel electrode formed in a pixel is formed. That is, the insulating layer 1902
Are formed so as to cover the source line 1913, the scanning line 1914, and the current supply line 1915. Further, a region a where a connection portion between the pixel electrode and the TFT is formed below.
The portion (1903) is also covered with the insulating layer 1902.

Further, the pixel portion 191 shown in FIG.
1 is a sectional view taken along the dotted line AA ′ of FIG.
01 on the organic compound film 1905 (1905 (a) to 19
05 (C)) is shown in FIG. 16 (B).
Here, an organic compound film made of the same material is formed in the vertical direction with respect to the paper surface, and organic compound films made of different materials are formed in the horizontal direction.

For example, the pixel (R) 191 in FIG.
2a shows an organic compound film (R) 1905a which emits red light.
Is formed, and an organic compound film (G) 1905b which emits green light is formed in the pixel (G) 1912b, and the pixel (B) 1912b is formed.
1912c is an organic compound film (B) 19 which emits blue light.
05c is formed. Note that the insulating layer 1902 serves as a margin when the organic compound film is formed, and the film formation position of the organic compound film is slightly shifted, as shown in FIG.
Even if organic compound films made of different materials overlap on 02, there is no problem as long as it is on the insulating layer 1902.

Further, the pixel portion 191 shown in FIG.
FIG. 16B is a cross-sectional view taken along the dotted line BB ′ of FIG.
FIG. 16C shows a state in which the organic compound film 1905 is formed over the pixel electrode 1901 in the same manner as in FIG.

The pixels cut along the dotted line BB 'include
Since an organic compound film (R) 1905a which emits red light similar to that of the pixel (R) 1912a is formed, FIG.
It has a structure shown by.

As described above, in the pixel portion 1911, the organic compound film (R) 1905a emitting red light is formed, the organic compound film (G) 1905b emitting green light is formed, and the organic compound film emitting blue light is formed. (B) 1905
c is formed, and the light emitting device can be made full color.

[0249]

As described above, by forming an organic compound film of a light emitting element using the film forming apparatus of the present invention, an organic compound film having a plurality of functional regions can be continuously formed in the same film forming chamber. Therefore, contamination of impurities at the interface of the functional region can be prevented. Further, since a mixed region made of an organic compound forming each functional region can be formed between the functional regions, an energy barrier between organic layers at the interface of the functional region can be reduced. This makes it possible to improve the injection property of carriers between the organic layers, so that it is possible to reduce the driving voltage and to form an organic light emitting device having a long lifetime.

[Brief description of the drawings]

FIG. 1 illustrates an element structure manufactured by a film formation apparatus of the present invention.

FIG. 2 illustrates a film formation chamber and an element structure to be manufactured.

FIG. 3 illustrates a film formation apparatus.

FIG. 4 is a view for explaining a metal mask alignment method.

FIG. 5 illustrates a film formation apparatus.

FIG. 6 illustrates a film formation chamber.

FIG. 7 illustrates a film formation apparatus.

FIG. 8 illustrates a film formation apparatus.

FIG. 9 illustrates a light-emitting device.

FIG. 10 illustrates a sealing structure.

FIG. 11 illustrates a light-emitting device.

FIG. 12 illustrates an example of an electric appliance.

FIG. 13 illustrates a conventional example.

FIG. 14 illustrates a film formation apparatus.

FIG. 15 illustrates a light-emitting device.

FIG. 16 illustrates a pixel portion.

FIG. 17 illustrates a material chamber in a film formation chamber.

 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 3K007 AB18 DB03 FA01 4K029 BA62 BB02 BD00 CA01 DB14 HA02

Claims (19)

[Claims] 1. A film forming apparatus having a plurality of film forming chambers, wherein the film forming chamber has a plurality of evaporation sources, and the plurality of evaporation sources have organic compounds having different functions, respectively. A film forming apparatus, wherein organic compounds having different functions are continuously vapor-deposited from the plurality of evaporation sources. 2. A film forming apparatus having a plurality of film forming chambers, wherein the film forming chamber has a plurality of evaporation sources, and the plurality of evaporation sources have organic compounds having different functions, respectively. A film forming apparatus, wherein at least two types of organic compounds are simultaneously vapor-deposited from the plurality of evaporation sources. 3. A film forming apparatus in which a load chamber, an alignment chamber, and a film forming chamber are connected in series, wherein the alignment chamber has a function of performing alignment between a metal mask and a substrate. The film formation chamber has a plurality of evaporation sources, the plurality of evaporation sources each have an organic compound having a different function, and continuously deposits the organic compounds having the different functions from the plurality of evaporation sources. Film forming apparatus. 4. A film forming apparatus in which a load chamber, an alignment chamber, and a film forming chamber are connected in series, wherein the alignment chamber has a function of performing alignment between a metal mask and a substrate. The film forming chamber has a plurality of evaporation sources, the plurality of evaporation sources have organic compounds having different functions, and at least two kinds of organic compounds are simultaneously vapor-deposited from the plurality of evaporation sources. Film forming equipment. 5. A film forming apparatus having a load room, a transfer room, an alignment room, and a film formation room, wherein the load room, the alignment room, and the film formation room are all connected to the transfer room. The alignment chamber has a function of aligning a metal mask and a substrate; the film forming chamber has a plurality of evaporation sources; the plurality of evaporation sources have organic compounds having different functions, respectively; A vapor deposition source for continuously depositing organic compounds having the different functions. 6. A film forming apparatus having a load room, a transfer room, an alignment room, and a film formation room, wherein the load room, the alignment room, and the film formation room are all connected to the transfer room. The alignment chamber has a function of aligning a metal mask and a substrate; the film forming chamber has a plurality of evaporation sources; the plurality of evaporation sources have organic compounds having different functions; A film forming apparatus for simultaneously depositing at least two kinds of organic compounds from an evaporation source. 7. The film forming apparatus according to claim 1, wherein a first film forming chamber for forming a first organic compound film, and a second organic compound film are formed. A film forming apparatus, comprising: a second film forming chamber; and a third film forming chamber for forming a third organic compound film. 8. The film forming apparatus according to claim 7, wherein the first film forming chamber forms a first organic compound film that emits red light, and the second film forming chamber emits green light. A third organic compound film that emits blue light is formed in the third film forming chamber. 9. The film forming apparatus according to claim 1, wherein the evaporation source has a hole injecting property, a hole transporting property, a light emitting property, a blocking property, an electron transporting property, or A film forming apparatus comprising an organic compound having an electron injecting property. 10. A first functional region is formed by performing vapor deposition from a first evaporation source having a first organic compound in the same film forming chamber; Forming a first mixed region by performing vapor deposition simultaneously from a second evaporation source having an organic compound; forming a second functional region by performing vapor deposition from the second evaporation source; Forming a second mixed region by performing evaporation from the evaporation source and a third evaporation source having a third organic compound at the same time, forming a third functional region by performing evaporation from the third evaporation source. Forming an organic compound film having the first functional region, the first mixed region, the second functional region, the second mixed region, and the third functional region. Characteristic film forming method. 11. A first functional region is formed by performing vapor deposition from a first evaporation source having a first organic compound in the same film forming chamber; Forming a first mixed region by performing vapor deposition simultaneously from a second evaporation source having an organic compound; forming a second functional region by performing vapor deposition from the second evaporation source; Forming a second mixed region by simultaneously performing evaporation from a third evaporation source having an evaporation source and a third organic compound, and forming a second functional region by performing evaporation from the second evaporation source. Forming, the first functional region, the first mixed region, the second functional region, having the second mixed region, and the second mixed region is the second functional region A film forming method characterized by being formed on a part of a film. 12. In forming a first organic compound film, a second organic compound film, and a third organic compound film in a film forming apparatus having a plurality of film forming chambers, Forming a first functional region by performing vapor deposition from a first evaporation source having one organic compound, simultaneously vapor deposition from the first evaporation source, and a second evaporation source having a second organic compound Forming a first mixed region by performing the second functional region by performing evaporation from the second evaporation source, the first functional region, the first mixed region, and the Forming a first organic compound film having a second functional region; and forming a third functional region by performing evaporation from a third evaporation source having a third organic compound in a second film forming chamber. Forming a third evaporation source, and a fourth organic compound Forming a second mixed region by performing vapor deposition from the evaporation source at the same time, forming a fourth functional region by performing vapor deposition from the fourth evaporation source, and forming the third functional region, the second Forming a second organic compound film having a mixed region and the fourth functional region, and performing evaporation from a fifth evaporation source having a fifth organic compound in a third film formation chamber. Forming a fifth functional region; forming a third mixed region by simultaneously performing vapor deposition from the fifth evaporation source, and a sixth evaporation source having a sixth organic compound; Forming a sixth functional region by performing evaporation from a source to form a third organic compound film having the fifth functional region, the third mixed region, and the sixth functional region. The first organic compound film, the second organic compound film, and Fine the light emission in the third organic compound film, film formation wherein the different respectively. 13. The fifth functional area according to claim 12, wherein one of the first functional area or the second functional area, one of the third functional area or the fourth functional area, and the fifth functional area. Alternatively, one of the sixth functional regions is formed of a luminescent organic compound, and the other of the first functional region or the second functional region, and the third functional region or the fourth functional region. The other of the functional regions and the other of the fifth functional region or the sixth functional region are each one of a hole-injecting property, a hole-transporting property, a blocking property, an electron-transporting property, and an electron-injecting organic compound. A film forming method characterized by being formed by a single method. 14. The organic light-emitting device according to claim 13, wherein a first light-emitting organic compound forming one of the first functional region and the second functional region; and the third functional region or the fourth function. The second light-emitting organic compound forming one of the regions and the third light-emitting organic compound forming one of the fifth functional region or the sixth functional region have different emission colors. A film forming method characterized by being formed from a compound. 15. The method according to claim 10, wherein the first functional region is formed on an anode, the first organic compound is a hole-transporting organic compound, and the second organic compound is a luminescent compound. An organic compound, wherein the third organic compound is an electron-transporting organic compound. 16. The method according to claim 11, wherein the first functional region is formed on an anode, the first organic compound is a hole-transporting organic compound, and the second organic compound is an electron-transporting compound. Wherein the third organic compound is a luminescent organic compound. 17. The method according to claim 13, wherein an aromatic diamine compound is used as the hole-transporting organic compound. 18. The method according to claim 13, wherein the organic compound having an electron transporting property is a metal complex having a quinoline skeleton, a metal complex having a benzoquinoline skeleton, an oxadiazole derivative, a triazole derivative, Alternatively, a film formation method using a phenanthroline derivative. 19. The light-emitting organic compound according to claim 13, wherein the light-emitting organic compound is a metal complex having a quinoline skeleton, a metal complex having a benzoxazole skeleton, or a metal complex having a benzothiazole skeleton. A film forming method characterized by being used.