JP2002299549A - Laminated semiconductor device and manufacturing method therefor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a laminated semiconductor device and a manufacturing method for preventing disconnection of a metal thin wire by the stress inside the sealing resin constituting a package and improving reliability. SOLUTION: In the laminated semiconductor device mounted with a plurality of semiconductor elements, the metal thin wire 14 connecting a second semiconductor element 15 and the wiring electrode 10b of a wiring board 10 are provided with a curved recessed part 14a on the side of the second semiconductor element 15, disconnection of the metal thin wire 14 itself by thermal expansion stress inside the sealing resin 16 constituting the package is prevented, and the reliability of the laminated semiconductor device is improved. The reliability is extremely high especially at the time of an operation under a heating environment after performing secondary mounting on a mounting board.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a stacked semiconductor device in which semiconductor elements having a plurality of functions are stacked in a three-dimensional direction, and a method of manufacturing the same. The present invention relates to a stacked semiconductor device and a method for manufacturing the same.

[0002]

2. Description of the Related Art In recent years, a stacked semiconductor device has been developed in which semiconductor elements having a plurality of functions are stacked and mounted on one circuit board (carrier board) having a circuit structure to constitute one package.

Hereinafter, a conventional stacked semiconductor device which has been developed will be described as a typical structure of a stacked semiconductor device in which two semiconductor elements are stacked and mounted on a substrate.

FIG. 5 is a sectional view showing the structure of a conventional stacked semiconductor device.

As shown in FIG. 5, in a conventional stacked semiconductor device, a wiring board 3 having wiring electrodes 1a and 1b and terminal electrodes 2 on the bottom surface, and a surface side of the wiring board 3 with a resin 4 interposed therebetween. A first semiconductor element 5 flip-chip connected to the wiring substrate 3 and a second semiconductor mounted on the back surface of the first semiconductor element 5 via an adhesive 6 with its front side up; The first semiconductor element 5 has a protruding electrode 5b provided on an electrode pad 5a on the surface thereof.
Of the second semiconductor element 7, the electrode pad 7a on the surface thereof is connected to the wiring electrode 1b of the wiring board 3 by a thin metal wire 8, and the upper surface area of the wiring board 3 is an insulating sealing resin. 9 is a structure sealed.

The semiconductor elements mounted on the wiring board 3 are a plurality of types of semiconductor elements such as a memory element and a logic element, and are high-function type semiconductor devices formed of multifunctional elements in one package.

Next, a conventional method for manufacturing a stacked semiconductor device will be described with reference to the drawings. 6 and 7 are main cross-sectional views for each process showing a conventional method for manufacturing a stacked semiconductor device.

First, as shown in FIG. 6A, projecting electrodes (bumps) 5b are respectively formed on a plurality of electrode pads 5a on the surface of the first semiconductor element 5. The bump electrodes are formed by a plating bump, a stud bump by a wire bonding method, or the like.

Next, as shown in FIG.
A sheet-like anisotropic conductive (ACF) resin 4 is supplied to the upper surface of the wiring substrate 3, and the surface of the projection electrode 5 b of the first semiconductor element 5 is opposed to the upper surface of the wiring substrate 3. Here, the supply of the resin 4 to the wiring board is performed by the wiring electrode 1 of the wiring board 3.
The liquid resin is supplied so as to cover the sheet a, and a liquid resin other than the sheet shape may be supplied by potting.

Next, as shown in FIG. 6C, the first semiconductor element 5 is pressed onto the upper surface of the wiring substrate 3 to project the protruding electrode 5b of the first semiconductor element 5 and the wiring electrode 1a of the wiring substrate 3. And connect.

Next, as shown in FIG. 6D, the back surface (back side) of the first semiconductor element 5 on which the second semiconductor element 7 is mounted on the wiring board 3 is applied by the adhesive 6 to the back surface. Adhesively fix with.

Next, as shown in FIG. 7A, the electrode pads 7a of the mounted second semiconductor element 7 and the wiring electrodes 1b on the upper surface of the wiring board 3 are electrically connected by thin metal wires 8.

Then, as shown in FIG. 7B, the stacked semiconductor device is formed by sealing the upper surface area of the wiring board 3 with an insulating sealing resin 9.

Through the above steps, a one-package type stacked semiconductor device in which two semiconductor elements are mounted on a wiring board has been conventionally realized.

[0015]

However, the conventional stacked semiconductor device has a structure in which two semiconductor elements are mounted on a single wiring board, so that the components added to the upper surface area of the wiring board are not provided. In many cases, there is a concern that the wiring board may be warped due to thermal expansion or a thin metal wire electrically connecting the semiconductor element and the wiring board may be broken due to stress due to thermal expansion.

That is, when the semiconductor element expands due to the difference in thermal expansion coefficient between the constituent members such as the wiring board and the semiconductor element constituting the stacked semiconductor device due to the thermal expansion, the semiconductor inside the sealing resin constituting the package is formed. The element moves slightly,
There is a risk that the thin metal wire connecting the semiconductor element and the wiring board may be broken due to stress. Conventionally, it is possible to approximate the thermal expansion coefficient of each component such as a wiring board, a semiconductor element, and a protruding electrode constituting a stacked semiconductor device, or to counteract thermal expansion and warpage of the stacked semiconductor device itself due to the thermal expansion coefficient. Although there was a countermeasure such as a structure, in the future it will be limited to mounting two semiconductor elements, and since there is a tendency to mount three or more semiconductor elements on one wiring board to constitute one package, There was a need to develop a fundamental stacked semiconductor device structure.

The present invention solves the above-mentioned conventional problems, and forms a package in a stacked semiconductor device in which two or more semiconductor elements are mounted three-dimensionally on a wiring board to form one package. It is an object of the present invention to provide a stacked semiconductor device having improved reliability by preventing disconnection of a thin metal wire due to stress inside a sealing resin, and a method of manufacturing the same.

[0018]

In order to solve the above-mentioned conventional problems, a stacked semiconductor device according to the present invention comprises a wiring board having wiring electrodes, a first semiconductor element and a second semiconductor element on the wiring board. Two or more semiconductor elements including a semiconductor element are stacked and mounted, and at least one of the first semiconductor element and the second semiconductor element is electrically connected to a wiring electrode of the wiring board. A laminated semiconductor device comprising: a metal thin wire; and a sealing resin sealing an upper surface region including an outer periphery of the stacked two or more semiconductor elements of the wiring substrate, wherein the metal thin wire is provided on a semiconductor element side. This is a stacked semiconductor device having a concavely curved concave portion.

The stacked semiconductor device according to the present invention also includes a wiring substrate having wiring electrodes, and a first semiconductor flip-chip connected on the wiring substrate with a front surface facing the wiring substrate via a resin via a resin. A second element mounted on the back surface of the first semiconductor element via an adhesive on the back surface of the first semiconductor element, and electrically connected to the wiring electrode of the wiring board by a thin metal wire;
Having at least two semiconductor elements with a semiconductor element of
A stacked semiconductor device in which an upper surface of the wiring board including an outer periphery of the first semiconductor element, the second semiconductor element, and the fine metal wire on the wiring board is sealed with a sealing resin; The thin metal wire connecting the semiconductor element and the wiring electrode of the wiring board is a stacked semiconductor device having a curved concave portion on the second semiconductor element side.

Further, the stacked semiconductor device of the present invention has a wiring board having a wiring electrode, and a back side mounted on the wiring board via an adhesive on the wiring board, the wiring board being provided with a wiring electrode. A first semiconductor element electrically connected by a first thin metal wire, mounted on a back surface of the first semiconductor element via an adhesive on a front surface of the first semiconductor element, and connected to a wiring electrode of the wiring board with a second electrode; The first semiconductor element, the second semiconductor element, and the first metal element on the wiring board, the semiconductor element including at least two semiconductor elements electrically connected to each other by a thin metal wire. A stacked semiconductor device in which an upper surface of a wiring substrate including a thin wire and a second metal thin wire is sealed with a sealing resin, wherein the first thin metal wire is a concave portion curved toward the first semiconductor element. Is a stacked semiconductor device having:

More specifically, the second fine metal wire is the second metal wire.
Is a stacked semiconductor device having a curved concave portion on the semiconductor element side.

The recess is a stacked type semiconductor device located at an intermediate portion of the thin metal wire.

The wiring substrate is a laminated semiconductor device which is a wiring substrate having a wiring electrode on an upper surface and a terminal electrode connected to the wiring electrode on the upper surface on a lower surface.

Further, the area of the first semiconductor element or the second semiconductor element and the area of the wiring board are substantially the same under the condition that the area of the wiring board is large, so that a chip size package is formed. Is a stacked semiconductor device.

As described above, the thin metal wire that electrically and physically connects the semiconductor element and the wiring board has a curved concave portion inside, that is, the semiconductor element side to which it is connected. In addition, the thin metal wire can be prevented from being broken due to stress inside the sealing resin.

The method for manufacturing a stacked semiconductor device according to the present invention comprises:
For a wiring substrate having a wiring electrode on an upper surface and a terminal electrode connected to the wiring electrode on the upper surface on a lower surface, a first semiconductor element having a protruding electrode formed on an electrode pad on the surface via a resin is provided. A first step of performing flip-chip connection and connecting the protruding electrode and the wiring electrode of the wiring substrate, and bonding the second semiconductor element to the back surface of the first semiconductor element via an adhesive with respect to the back surface of the first semiconductor element A second step of bonding and mounting on the side;
A third step of electrically connecting a wiring electrode of the wiring substrate and the second semiconductor element with a thin metal wire, and forming a curved concave portion on the side of the second semiconductor element in the thin metal wire; A fourth step of sealing the upper surface region of the wiring board with a sealing resin is a method for manufacturing a stacked semiconductor device.

More specifically, the first step, the second step, the third step, and the fourth step involve individually mounting a plurality of semiconductor elements on the upper surface, A wiring electrode corresponding to the semiconductor element is provided, and a lower surface is provided with a terminal electrode connected to the upper surface wiring electrode inside the substrate,
A method for manufacturing a stacked semiconductor device, which includes a step of performing each of one large wiring substrate having a structure that can be divided into individual semiconductor element units and cutting and separating the stacked semiconductor devices into individual stacked semiconductor devices as a final step. is there.

A third step of electrically connecting the wiring electrode of the wiring board to the second semiconductor element with a thin metal wire and forming a curved concave portion on the side of the second semiconductor element in the thin metal wire; Then, a method of manufacturing a stacked semiconductor device in which a concave portion is formed in an intermediate portion of the thin metal wire.

As described above, the wiring electrode of the wiring board and the second semiconductor element are electrically connected to each other by a thin metal wire, and a concave portion curved toward the second semiconductor element is formed in an intermediate portion of the thin metal wire. Therefore, after the outer periphery is sealed with the sealing resin, breakage of the thin metal wire due to stress inside the sealing resin can be prevented.

Further, since the concave portion curved toward the second semiconductor element is formed in the middle portion of the thin metal wire, the structure becomes a buffer structure against the pressure caused by the flowing resin at the time of resin sealing, and the break of the thin metal wire is prevented. It can be prevented and sealed. In particular, a great effect of preventing disconnection can be exerted against a large amount of sealing resin pressure at the time of batch molding.

[0031]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of a stacked semiconductor device and a method of manufacturing the same according to the present invention will be described below.

First, the stacked semiconductor device of the present embodiment will be described with reference to the drawings. FIG. 1 is a main cross-sectional view showing the stacked semiconductor device of the present embodiment.

In the stacked semiconductor device of the present embodiment, a wiring board having wiring electrodes, and two or more semiconductor elements of a first semiconductor element and a second semiconductor element are stacked and mounted on the wiring board. A thin metal wire electrically connecting at least one semiconductor element of the plurality of semiconductor elements and a wiring electrode of the wiring substrate, and a sealing in which an upper surface region including an outer periphery of each semiconductor element on the wiring substrate is sealed; A laminated semiconductor device made of resin, wherein the thin metal wire has a curved concave portion on the semiconductor element side. Therefore, disconnection of the thin metal wire due to stress inside the sealing resin can be prevented.
In addition, the present invention is a stacked semiconductor device with improved reliability particularly in a heating environment after secondary mounting.

Specifically, as shown in FIG. 1, the stacked semiconductor device of this embodiment has a wiring electrode 10
a, 10b, and each wiring electrode 10a,
A wiring board 10 having a terminal electrode 10c electrically connected to the inside of the board 10b, and a projection on an electrode pad 12a on the front side of the wiring board 10 via an anisotropic conductive (ACF) resin 11 on the wiring board 10 An electrode 12b is connected to a first semiconductor element 12, such as a microcomputer element, which is flip-chip connected to the wiring substrate 10 and a first semiconductor element 12 on the back surface of the first semiconductor element 12 with an adhesive 13 therebetween. Is laminated and mounted on the back surface of the semiconductor element 12 of the
0b and a second semiconductor element 15 such as a memory element such as a memory element whose electrode pad 15a is electrically connected by a thin metal wire 14, and the first semiconductor element 12 on the wiring board 10; This is a stacked semiconductor device in which the upper surface area of the wiring substrate 10 including the outer periphery of the second semiconductor element 15 and the fine metal wires 14 is sealed with the sealing resin 16. The thin metal wire 14 connected to the wiring electrode 10b has a concave portion 14a which is curved on the second semiconductor element 15 side which is inside. The concave portion 14a is provided at an intermediate portion between a portion where the thin metal wire 14 is connected to the electrode pad 15a of the second semiconductor element 15 and a portion where the thin metal wire 14 is connected to the wiring electrode 10b of the wiring board 10. The structure is such that no external force is directly applied to the portion (bond portion). The middle portion of the thin metal wire 14 is a portion where the swelling of the thin metal wire 14 is large and an external force is easily applied.
4a.

Further, the stacked semiconductor device of the present embodiment
The area of the first semiconductor element 12 or the second semiconductor element 15 and the area of the wiring board 10 are substantially the same size under the condition that the area of the wiring board 10 is large, and constitute a CSP (chip size package). Is what you are doing.

As described above, the stacked semiconductor device of this embodiment is
A one-package CSP is formed by mounting at least two or more semiconductor elements on a wiring board. In particular, the thin metal wires 14 electrically connecting the wiring board 10 and the second semiconductor element 15 are curved inward. Since the recessed portion 14a is provided, it is possible to prevent disconnection of the thin metal wire itself due to thermal expansion stress inside the sealing resin 16 constituting the package, thereby providing a stacked semiconductor device with improved reliability. In particular, the reliability is extremely high when the stacked semiconductor device of the present embodiment is operated in a heating environment after being secondarily mounted on a mounting board.

Next, a method of manufacturing the stacked semiconductor device of the present embodiment will be described with reference to the drawings. Figures 2 and 3
FIG. 4 is a main cross-sectional view for each step showing the method for manufacturing the stacked semiconductor device of the embodiment.

First, as shown in FIG. 2A, projecting electrodes (bumps) 12b are formed on a plurality of electrode pads 12a on the surface of the first semiconductor element 12, respectively. The bump electrodes are formed by a plating bump, a stud bump by a wire bonding method, or the like.

Next, as shown in FIG.
In addition to supplying a sheet-like anisotropic conductive (ACF) resin 11 to the upper surface of the wiring board 10, the first semiconductor element 12 such as a microcomputer (logic) element is connected to the surface of the projecting electrode 12 b of the wiring board 10. Face the upper surface. Here, the supply of the resin 11 to the wiring board 10 is performed by using the wiring electrodes 10 of the wiring board 10.
The liquid resin is supplied so as to cover the sheet a, and a liquid resin other than the sheet shape may be supplied by potting. The filling of the resin 11 into the gap between the wiring board 10 and the first semiconductor element 12 is performed by first supplying the sheet-shaped resin 11 onto the wiring board 10 as described above.
After connecting the wiring electrode 2 and the wiring electrode 10a of the wiring board 10, the filling may be performed by injection. In the subsequent filling by injection, an insulating resin may be used.

Next, as shown in FIG. 2C, the first semiconductor element 12 is pressed onto the upper surface of the wiring board 10 to project the protruding electrode 12b of the first semiconductor element 12 and the wiring electrode 10a of the wiring board 10. And connect. After connecting and fixing the elements, a step of reducing the element thickness by performing grinding with a grinder and further polishing to reduce the thickness of the first semiconductor element 12 may be added.

Next, as shown in FIG. 2D, the second semiconductor element 15 having an electrode pad 15a on the surface thereof is applied to the back surface of the first semiconductor element 12 with an adhesive 13 therebetween.
Is mounted on the back side.

Next, as shown in FIG. 3A, the electrode pad 15a of the mounted second semiconductor element 15 is
Is electrically connected to the wiring electrode 10b by a thin metal wire 14. Wire bonding is performed using a gold wire, an aluminum wire, or a copper wire as the thin metal wire. In this step, the fine metal wire 1
4 is connected to the electrode pad 15 of the second semiconductor element 15.
a of the second semiconductor element 1 with respect to a portion connected to the wiring electrode 10b of the wiring board 10 and a portion connected to the wiring electrode 10b.
The concave portion 14a is formed so as to be curved to the fifth side. Then, as the formation of the concave portion 14a, a bonding tool of a wire bonder is bonded to the second semiconductor element 15,
When moving from the 1st bond (element side) to the 2nd bond (substrate side), it can be formed by first moving to the second semiconductor element 15 side and then bonding to the wiring electrode 10b of the wiring substrate 10. The amount of depression of the concave portion 14a is an amount that does not make contact with the semiconductor element, and is suppressed to such a degree that the thin metal wire 14 itself does not sag.

As shown in FIG. 3B, the region including the outer periphery of the first semiconductor element 12, the second semiconductor element 15, and the thin metal wire 14 in the upper surface area of the wiring board 10 is made of an insulating epoxy resin. Sealing with a sealing resin 16. In this resin sealing, sealing can be performed by a transfer molding method using a mold or a potting method.

Since the concave portion 14a is formed in the fine metal wire 14, even if the sealing pressure of the sealing resin 16 is applied to the fine metal wire 14, the sealing can be performed without disconnection.

As described above, in the manufacturing method of the stacked semiconductor device according to the present embodiment, since the concave portion curved toward the second semiconductor element is formed in the middle portion of the thin metal wire, the metal due to the stress inside the sealing resin is formed. In addition to being able to prevent the thin wire from being broken, a concave portion that is curved toward the second semiconductor element is formed in the middle portion of the thin metal wire. The wire can be sealed by preventing the thin wire from being broken.

In the method of manufacturing a stacked semiconductor device according to the present embodiment, the steps of mounting each semiconductor element on a substrate, connecting a thin metal wire, and sealing are performed by individually mounting a plurality of semiconductor elements on the upper surface. In addition, wiring electrodes corresponding to individual semiconductor elements are provided on the upper surface, and terminal electrodes connected to the wiring electrodes on the upper surface inside the substrate are provided on the lower surface, and can be divided into individual semiconductor element units. This is performed for one large-sized wiring substrate having a structure (batch molding method). Then, after sealing the upper surface of the wiring substrate with the sealing resin, a final step is a step of cutting and separating into individual stacked semiconductor devices using a dicing blade. Accordingly, the outer shape of the stacked semiconductor device of the embodiment as shown in FIG. 1 is such that the side surface of the sealing resin 15 is located on the same plane as the side surface of the wiring substrate 10, and this is achieved by batch cutting. It is a divided shape.

Further, in the collective molding, since the concave portion is formed in the thin metal wire connecting each semiconductor element, it is possible to exert a great effect of preventing disconnection against a large amount of sealing resin pressure during the collective molding. You can do it.

Next, a stacked semiconductor device of another embodiment will be described.

FIG. 4 is a main sectional view showing a stacked semiconductor device according to another embodiment.

As shown in FIG. 4, the stacked semiconductor device of this embodiment differs from the embodiment shown in FIG. 1 in that the electrical connection between the first semiconductor element 12 and the wiring board 10 is made by the thin metal wire 1.
7 is what is going on. The concave portion 17a is provided in the middle of the fine metal wire 17 in the same manner as the concave portion 14a provided in the fine metal wire 14.

With this structure, the first semiconductor element 12,
The thin metal wires 14 and 17 that electrically and physically connect the second semiconductor element 15 and the wiring board 10 have curved concave portions 14a and 17a on the inside, that is, on the side of each semiconductor element to which they are connected. Accordingly, breakage of the thin metal wire due to stress inside the sealing resin 16 can be prevented. In particular, in the embodiment as shown in FIG. 4, the number of fine metal wires is large, and thus the metal wires are easily affected by stress. However, since the fine metal wires have concave portions, disconnection can be effectively prevented. .

As described above, in the present embodiment, the first
A sealing resin in which two or more semiconductor elements of the semiconductor element and the second semiconductor element are stacked and mounted, and an upper surface region including an outer periphery of the two or more semiconductor elements stacked on the wiring board is sealed; The semiconductor device according to claim 1, wherein at least one semiconductor element is connected to the wiring board with a thin metal wire, and a concave portion is provided in an intermediate portion of the thin metal wire. Disconnection can be prevented. In particular, the stacked semiconductor device has improved reliability in a heating environment after secondary mounting.

[0053]

According to the stacked semiconductor device of the present invention, two or more semiconductor elements of a first semiconductor element and a second semiconductor element are stacked and mounted on a wiring board and stacked on the wiring board. In a stacked semiconductor device including a sealing resin that seals an upper surface region including an outer periphery of one or more semiconductor elements, a thin metal wire electrically connected has a concave portion, so that the inside of the sealing resin has This prevents a thin metal wire from being broken due to stress, thereby realizing a stacked semiconductor device with improved reliability.

In the method of manufacturing a stacked semiconductor device according to the present invention, when the semiconductor element is electrically connected to the wiring board, a concave portion curved toward the semiconductor element is formed in an intermediate portion of the thin metal wire. The structure has a buffer structure against the pressure caused by the flowing resin at the time of resin sealing, and can be sealed while preventing the thin metal wires from being broken. In particular, a great effect of preventing disconnection can be exerted against a large amount of sealing resin pressure at the time of batch molding.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a stacked semiconductor device according to an embodiment of the present invention;

FIG. 2 is a cross-sectional view illustrating a method of manufacturing a stacked semiconductor device according to one embodiment of the present invention.

FIG. 3 is a sectional view showing the method of manufacturing the stacked semiconductor device according to one embodiment of the present invention;

FIG. 4 is a sectional view showing a stacked semiconductor device according to another embodiment of the present invention;

FIG. 5 is a cross-sectional view showing a conventional stacked semiconductor device.

FIG. 6 is a sectional view showing a conventional method of manufacturing a stacked semiconductor device.

FIG. 7 is a cross-sectional view illustrating a method for manufacturing a conventional stacked semiconductor device.

[Explanation of symbols]

 1a, 1b Wiring electrode 2 Terminal electrode 3 Wiring board 4 Resin 5 First semiconductor element 5a Electrode pad 5b Protruding electrode 6 Adhesive 7 Second semiconductor element 7a Electrode pad 8 Fine metal wire 9 Sealing resin 10 Wiring board 10a, 10b Wiring electrode 11 Resin 12 First semiconductor element 12a Electrode pad 12b Protruding electrode 13 Adhesive 14 Thin metal wire 14a Depression 15 Second semiconductor element 15a Electrode pad 16 Sealing resin 17 Thin metal wire 17a Depression

 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 5F044 AA02 CC05 FF08 JJ03

Claims (10)

[Claims] 1. A wiring board having a wiring electrode, and two or more semiconductor elements of a first semiconductor element and a second semiconductor element are stacked and mounted on the wiring board, and at least the first semiconductor element And a thin metal wire electrically connecting one semiconductor element of the second semiconductor element and a wiring electrode of the wiring board; and an outer periphery of the two or more stacked semiconductor elements of the wiring board. A stacked semiconductor device comprising a sealing resin sealing an upper surface region, wherein the thin metal wire has a curved concave portion on a semiconductor element side. 2. A wiring board having wiring electrodes, a first semiconductor element flip-chip connected on the wiring board with a front surface facing the wiring board via a resin, and the first semiconductor. At least two of a second semiconductor element mounted on the back side of the element via an adhesive and on the back side thereof and electrically connected to the wiring electrode of the wiring board by a thin metal wire
A stacked semiconductor device having two semiconductor elements, and the upper surface of the wiring substrate including the first semiconductor element, the second semiconductor element, and the outer periphery of the fine metal wire on the wiring substrate is sealed with a sealing resin. Wherein the thin metal wire connecting the second semiconductor element and the wiring electrode of the wiring substrate has a curved concave portion on the side of the second semiconductor element. . 3. A wiring board having a wiring electrode, and a back side thereof is mounted on the wiring board via an adhesive on the wiring board, and electrically connected to the wiring electrode of the wiring board and the first thin metal wire. A first semiconductor element connected to the first semiconductor element, mounted on the front surface of the first semiconductor element via an adhesive on the back side, and electrically connected to a wiring electrode of the wiring board by a second thin metal wire. And at least two semiconductor elements, the first semiconductor element, the second semiconductor element, the first metal thin wire, and the second metal thin wire on the wiring board. A stacked semiconductor device in which an upper surface of a wiring board including an outer periphery is sealed with a sealing resin, wherein the first thin metal wire has a curved concave portion on the first semiconductor element side. A stacked semiconductor device. 4. The stacked semiconductor device according to claim 3, wherein the second thin metal wire has a curved concave portion on the side of the second semiconductor element. 5. The stacked semiconductor device according to claim 1, wherein the recess is located at an intermediate portion of the thin metal wire. 6. The wiring board according to claim 1, wherein the wiring board has a wiring electrode on an upper surface and a terminal electrode connected to the wiring electrode on the upper surface on a lower surface. 3. The stacked semiconductor device according to item 1. 7. An area of the first semiconductor element or the second semiconductor element and an area of the wiring board are substantially equal to each other under the condition that the area of the wiring board is large to constitute a chip size package. Claim 1 characterized by the fact that
The stacked semiconductor device according to claim 3. 8. A wiring board having a wiring electrode on an upper surface and a terminal electrode connected to the wiring electrode on the upper surface on a lower surface, wherein a protruding electrode is formed on an electrode pad on the surface via a resin. A first semiconductor element that is flip-chip connected to connect the protruding electrode to a wiring electrode of the wiring board;
A second step of bonding and mounting a second semiconductor element on the back side of the first semiconductor element via an adhesive to the back side of the first semiconductor element; and a wiring electrode of the wiring board and the second step. A third step of electrically connecting the semiconductor element with a thin metal wire and forming a curved concave portion on the second semiconductor element side in the thin metal wire; and sealing the upper surface region of the wiring board with a sealing resin. A method of manufacturing a stacked semiconductor device, comprising a fourth step of sealing. 9. A first step, a second step, a third step,
In the fourth step, a plurality of semiconductor elements are individually mounted on the upper surface, wiring electrodes corresponding to the individual semiconductor elements are provided on the upper surface, and the wiring electrodes on the upper surface are connected to the wiring electrodes on the lower surface inside the substrate. A large-sized wiring board having a structure in which terminal electrodes are provided and which can be divided into individual semiconductor element units, and having a step of cutting and separating into individual stacked semiconductor devices as a final step. The method for manufacturing a stacked semiconductor device according to claim 8, wherein: 10. A third step of electrically connecting a wiring electrode of a wiring board and a second semiconductor element with a thin metal wire and forming a curved concave portion on the side of the second semiconductor element in the thin metal wire. 9. The method according to claim 8, wherein a recess is formed in an intermediate portion of the thin metal wire.