JP2002289706A5 - - Google Patents
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- Publication number
- JP2002289706A5 JP2002289706A5 JP2001085821A JP2001085821A JP2002289706A5 JP 2002289706 A5 JP2002289706 A5 JP 2002289706A5 JP 2001085821 A JP2001085821 A JP 2001085821A JP 2001085821 A JP2001085821 A JP 2001085821A JP 2002289706 A5 JP2002289706 A5 JP 2002289706A5
- Authority
- JP
- Japan
- Prior art keywords
- memory cell
- insulating film
- gate
- source
- impurity concentration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims 33
- 239000012535 impurity Substances 0.000 claims 30
- 238000009792 diffusion process Methods 0.000 claims 25
- 239000000758 substrate Substances 0.000 claims 20
- 238000009826 distribution Methods 0.000 claims 10
- 238000002955 isolation Methods 0.000 claims 2
- 230000004913 activation Effects 0.000 claims 1
- 230000002093 peripheral effect Effects 0.000 claims 1
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001085821A JP2002289706A (ja) | 2001-03-23 | 2001-03-23 | 不揮発性半導体記憶装置およびその製造方法 |
| US10/058,343 US6835987B2 (en) | 2001-01-31 | 2002-01-30 | Non-volatile semiconductor memory device in which selection gate transistors and memory cells have different structures |
| US10/942,013 US6949794B2 (en) | 2001-01-31 | 2004-09-16 | Non-volatile semiconductor memory device in which selection gate transistors and memory cells have different structures |
| US11/225,094 US7122869B2 (en) | 2001-01-31 | 2005-09-14 | Nonvolatile semiconductor memory device in which selection transistors and memory transistors have different impurity concentration distributions |
| US11/538,944 US7274075B2 (en) | 2001-01-31 | 2006-10-05 | Nonvolatile semiconductor memory device having pair of selection transistors with different source and drain impurity concentrations and with different channel dopant concentrations |
| US11/857,934 US7737508B2 (en) | 2001-01-31 | 2007-09-19 | Non-volatile semiconductor memory device and method of manufacturing the same |
| US12/779,357 US8338252B2 (en) | 2001-01-31 | 2010-05-13 | Non-volatile semiconductor memory device and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001085821A JP2002289706A (ja) | 2001-03-23 | 2001-03-23 | 不揮発性半導体記憶装置およびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002289706A JP2002289706A (ja) | 2002-10-04 |
| JP2002289706A5 true JP2002289706A5 (cg-RX-API-DMAC7.html) | 2005-10-27 |
Family
ID=18941272
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001085821A Pending JP2002289706A (ja) | 2001-01-31 | 2001-03-23 | 不揮発性半導体記憶装置およびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002289706A (cg-RX-API-DMAC7.html) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100604857B1 (ko) * | 2004-05-27 | 2006-07-26 | 삼성전자주식회사 | 바이트 단위로 소거되는 이이피롬 소자 및 그 제조방법 |
| JP4657681B2 (ja) * | 2004-06-03 | 2011-03-23 | シャープ株式会社 | 半導体記憶装置およびその製造方法並びに携帯電子機器 |
| KR100822807B1 (ko) | 2006-10-20 | 2008-04-18 | 삼성전자주식회사 | 플래시 기억 장치 및 그 제조 방법 |
| JP5052580B2 (ja) * | 2009-09-30 | 2012-10-17 | 株式会社東芝 | 半導体装置及びその製造方法 |
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2001
- 2001-03-23 JP JP2001085821A patent/JP2002289706A/ja active Pending