JP2002280731A - Wiring board equipped with solder ball and its manufacturing method - Google Patents

Wiring board equipped with solder ball and its manufacturing method

Info

Publication number
JP2002280731A
JP2002280731A JP2001082979A JP2001082979A JP2002280731A JP 2002280731 A JP2002280731 A JP 2002280731A JP 2001082979 A JP2001082979 A JP 2001082979A JP 2001082979 A JP2001082979 A JP 2001082979A JP 2002280731 A JP2002280731 A JP 2002280731A
Authority
JP
Japan
Prior art keywords
plating film
solder ball
solder
wiring board
electroless
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001082979A
Other languages
Japanese (ja)
Other versions
JP2002280731A5 (en
Inventor
Takaaki Nodo
高明 納堂
Kiyoshi Hasegawa
清 長谷川
Akio Takahashi
昭男 高橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Showa Denko Materials Co Ltd
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Priority to JP2001082979A priority Critical patent/JP2002280731A/en
Publication of JP2002280731A publication Critical patent/JP2002280731A/en
Publication of JP2002280731A5 publication Critical patent/JP2002280731A5/ja
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To provide a wiring board which is equipped with solder balls excellent in connection reliability after a thermal treatment and its manufacturing method. SOLUTION: An electrolytic nickel alloy plating film, an electroless palladium plating film, and an electrolytic gold plating film are successively formed on a conductor terminal. A wiring board is equipped with the above conductor terminal and a solder ball that has such a certain composition which never increases in shear strength by 10% or above by a thermal treatment and is formed on the above conductor terminal, and a solder ball connection terminal is mounted with a solder ball. A wiring board manufacturing method is that solder paste having composition which hardly increases in shear strength by 10% or above by a thermal treatment is applied onto a board equipped with a conductor terminal successively coated with an electrolytic nickel alloy plating film, an electroless palladium plating film, and an electroless gold plating film and melted into solder balls by heating.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、はんだボールを有
する配線板とその製造方法に関する。
The present invention relates to a wiring board having solder balls and a method for manufacturing the same.

【0002】[0002]

【従来の技術】電子部品を搭載するプリント配線板や半
導体を直接搭載する半導体搭載用基板は、近年高密度化
が進んでおり、実装方法も高密度化に対応してきてお
り、配線板のスルーホールに電子部品の端子ピンを挿入
して、はんだで固定する実装方法から、配線板の表面層
の端子にはんだで固定する表面実装方法に変わってきて
いる。
2. Description of the Related Art In recent years, the density of printed wiring boards on which electronic components are mounted and semiconductor mounting substrates on which semiconductors are directly mounted have been increasing, and mounting methods have been adapted to higher densities. The mounting method in which the terminal pins of the electronic component are inserted into the holes and fixed with solder has been changed to the surface mounting method in which the terminal pins of the surface layer of the wiring board are fixed with solder.

【0003】また、表面実装用の電子部品でも、はんだ
接続用のリード端子を平行した2列に形成したデュアル
インラインパッケージ(以下、DIPという。)や、正
方形のパッケージの4辺にリード端子を設けたクワッド
フラットパッケージ(以下、QFPという。)から、パ
ッケージの裏面に格子状に配列したはんだボールで接続
するボールグリッドアレイ(以下、BGAという。)に
なってきている。
[0003] Also, in electronic parts for surface mounting, lead terminals are provided on four sides of a dual in-line package (hereinafter referred to as DIP) in which lead terminals for solder connection are formed in two rows in parallel, or a square package. In addition, a ball grid array (hereinafter, referred to as BGA) has been changed from a quad flat package (hereinafter, referred to as QFP), which is connected to the back surface of the package by solder balls arranged in a grid.

【0004】このBGAのはんだボールが接続した端子
構造は、導体端子上にはんだボールが接続されている。
In the terminal structure of the BGA to which the solder balls are connected, the solder balls are connected to the conductor terminals.

【0005】また、ここで使用されているはんだボール
は錫と鉛の割合が6:4である共晶はんだボールであ
る。近年、地球環境の問題から鉛を使用しないはんだが
数十種類以上提案されているが、共晶はんだボールの代
替にはなっていない。
[0005] The solder balls used here are eutectic solder balls in which the ratio of tin to lead is 6: 4. In recent years, dozens or more types of solders that do not use lead have been proposed due to the problem of the global environment, but they have not been substituted for eutectic solder balls.

【0006】[0006]

【発明が解決しようとする課題】ところで、従来の共晶
はんだボールが接続した端子構造では、はんだボールの
接続後の熱処理によって接続信頼性が著しく低下するこ
とがあるという課題がある。このはんだボールの接続不
良には、はんだボールそのものが破壊する場合と、はん
だボールとはんだボール接続用端子の界面が剥離する場
合とがあり、はんだボールそのものが破壊する場合は、
かなり大きい外力が加わらなければ起こらず、通常の使
用状態での接続不良は、ほとんどが、はんだボールとは
んだボール接続用端子の界面が剥離することによって起
こっているという課題があった。
However, in the conventional terminal structure in which eutectic solder balls are connected, there is a problem that the heat treatment after the connection of the solder balls may significantly reduce the connection reliability. In the connection failure of the solder ball, there are a case where the solder ball itself is broken and a case where the interface between the solder ball and the solder ball connection terminal is peeled off.
There is a problem that the connection failure in a normal use state is almost caused by the peeling of the interface between the solder ball and the solder ball connection terminal unless a considerably large external force is applied.

【0007】本発明は、熱処理後の接続信頼性に優れ
た、はんだボールを有する配線板とその製造方法を提供
することを目的とする。
An object of the present invention is to provide a wiring board having solder balls, which has excellent connection reliability after heat treatment, and a method of manufacturing the same.

【0008】[0008]

【課題を解決するための手段】本発明は、以下のことを
特徴とする。 (1) 電解ニッケル合金めっき皮膜、無電解パラジウ
ムめっき皮膜、無電解金めっき皮膜が、その順に形成さ
れた導体の端子上に、熱処理によってせん断強度が10
%以上増加しない組成のはんだボールを有する配線板。 (2)熱処理が、0℃以上で170℃以下の放置処理、
または−100℃以上で170℃以下の範囲内で交互に
温度を変化させる冷熱サイクル処理のいずれかの処理で
ある(1)に記載のはんだボールを有する配線板。 (3)はんだボールを搭載するはんだボール接続用端子
であって、電解ニッケル合金めっき皮膜、無電解パラジ
ウムめっき皮膜、無電解金めっき皮膜が、その順に形成
された導体の端子を有する基板に、熱処理によってせん
断強度が10%以上増加しない組成のはんだペーストを
塗布し、加熱・溶融してはんだボールを形成する配線板
の製造法。 (4)はんだボールを搭載するはんだボール接続用端子
であって、電解ニッケル合金めっき皮膜、無電解パラジ
ウムめっき皮膜、無電解金めっき皮膜が、その順に形成
された導体の端子を有する基板に、熱処理によってせん
断強度が10%以上増加しない組成のはんだめっきを行
い、加熱・溶融してはんだボールを形成する配線板の製
造法。 (5)熱処理が、0℃以上で170℃以下の放置処理、
または−100℃以上で170℃以下の範囲内で交互に
温度を変化させる冷熱サイクル処理のいずれかの処理で
ある(3)または(4)に記載の配線板の製造法。
The present invention is characterized by the following. (1) An electrolytic nickel alloy plating film, an electroless palladium plating film, and an electroless gold plating film are applied on a conductor terminal formed in this order to have a shear strength of 10 by heat treatment.
A wiring board having a solder ball having a composition that does not increase by more than 10%. (2) heat treatment, leaving treatment at 0 ° C. or more and 170 ° C. or less,
Alternatively, the wiring board having the solder balls according to (1), which is any one of cooling and heating cycling treatments in which the temperature is alternately changed within a range of -100 ° C or more and 170 ° C or less. (3) A solder ball connecting terminal on which a solder ball is mounted, wherein an electrolytic nickel alloy plating film, an electroless palladium plating film, and an electroless gold plating film are heat-treated on a substrate having conductor terminals formed in this order. A method of manufacturing a wiring board in which a solder paste having a composition that does not increase the shear strength by 10% or more is applied and heated and melted to form a solder ball. (4) A solder ball connection terminal for mounting a solder ball, wherein an electrolytic nickel alloy plating film, an electroless palladium plating film, and an electroless gold plating film are heat-treated on a substrate having conductor terminals formed in this order. A method of manufacturing a wiring board in which solder plating having a composition in which the shear strength does not increase by 10% or more is performed and heated and melted to form a solder ball. (5) heat treatment, leaving treatment at 0 ° C. or more and 170 ° C. or less,
Or the method of manufacturing a wiring board according to (3) or (4), which is one of cooling and heating cycle treatments in which the temperature is alternately changed within a range of −100 ° C. or more and 170 ° C. or less.

【0009】[0009]

【発明の実施の形態】本発明の配線板は、はんだボール
を搭載するはんだボール接続用端子を有するものであっ
て、セラミック基板や有機基板など基板材質に限定され
ることなく用いることができる。セラミック基板として
は、アルミナ基板、窒化アルミ基板などを用いることが
できる。有機基板としては、ガラスクロスにエポキシ樹
脂を含浸させたFR−4基板、ビスマレイミド−トリア
ジン樹脂を含浸させたBT基板、さらにはポリイミドフ
ィルムを基材として用いたポリイミドフィルム基板など
を用いることができる。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The wiring board of the present invention has a solder ball connection terminal for mounting a solder ball, and can be used without being limited to a substrate material such as a ceramic substrate or an organic substrate. As the ceramic substrate, an alumina substrate, an aluminum nitride substrate, or the like can be used. As the organic substrate, an FR-4 substrate in which a glass cloth is impregnated with an epoxy resin, a BT substrate in which a bismaleimide-triazine resin is impregnated, and a polyimide film substrate using a polyimide film as a base material can be used. .

【0010】配線の構造には、片面配線、両面配線、多
層配線いずれの構造でもよく必要に応じて用いることが
できる。特に多層配線の中でも高密度に対応できる非貫
通孔を設けた配線板を用いれば、部品実装の面積割合が
多いため信頼性確保が難しいが、上記の導電性粒子を含
む接着剤を介して接着した金属箔を導体パターンに用い
て、接続信頼性を向上することが可能となる。非貫通孔
を設けた配線板には、セラミック基板ではグリーンシー
トと導電性ペーストによる導体パターンとグリーンシー
トに設けたバイアホールに導電性ペーストを充填した多
層化材料を積層して焼結・作製した基板を用いることが
できる。有機基板には、内層回路板の表面に絶縁層を形
成し、その絶縁層にレーザ法やフォト法で非貫通孔を設
け、内層回路と接続した導体回路を形成し、これを順次
繰り返して作製するビルドアップ法で作製した基板を用
いることができる。
The wiring structure may be any of single-sided wiring, double-sided wiring, and multilayer wiring, and may be used as required. In particular, when using a wiring board provided with non-through holes that can respond to high density even among multilayer wiring, it is difficult to ensure reliability because the area ratio of component mounting is large, but it is bonded through an adhesive containing the above conductive particles. By using the metal foil thus obtained for the conductor pattern, it is possible to improve the connection reliability. On the wiring board provided with non-through holes, a ceramic substrate was formed by sintering and laminating a conductive pattern of a green sheet and a conductive paste and a multilayer material filled with a conductive paste in via holes provided in the green sheet. A substrate can be used. On the organic substrate, an insulating layer is formed on the surface of the inner layer circuit board, a non-through hole is provided in the insulating layer by a laser method or a photo method, and a conductor circuit connected to the inner layer circuit is formed, and this is sequentially repeated and manufactured. A substrate manufactured by a build-up method can be used.

【0011】また、さらに、はんだボールを搭載できる
ような基板であれば、現在使用されているような、テー
プオートメイテッドボンディング(以下、TABとい
う。)、リードフレーム、ボールグリッドアレイ(以
下、BGAという。),チップサイズパッケージ(以
下、CSPという。),マルチチップモジュール(以
下、MCMという。)などの基板にも用いることができ
る。
Further, if the substrate is capable of mounting solder balls, it is a tape automated bonding (hereinafter, referred to as TAB), a lead frame, and a ball grid array (hereinafter, referred to as BGA) as currently used. ), A chip size package (hereinafter, referred to as CSP), a multi-chip module (hereinafter, referred to as MCM), and the like.

【0012】このような配線板は、通常は、半導体チッ
プなどの電子部品を搭載し、マザーボードとの間の接続
をはんだボールで行うものが多いが、半導体チップなど
の電子部品を搭載する箇所にはんだボールを搭載するも
のであってもよい。また、半導体チップのみならず、チ
ップコンデンサやチップ抵抗などを搭載するものであっ
てもよい。
Usually, such wiring boards mount electronic components such as semiconductor chips and connect them to a motherboard by solder balls in many cases. What mounts a solder ball may be used. Further, not only a semiconductor chip but also a chip capacitor and a chip resistor may be mounted.

【0013】はんだボール接続用端子の素材には、銅、
タングステン、モリブデン等の金属が使用できる。本発
明の導体の表面処理は、無電解ニッケル合金めっきであ
り、めっき液中のニッケルイオンをニッケルイオンの還
元剤の動きによって、銅、タングステン、モリブデン等
の導体の端子を活性化した表面にニッケルを析出させた
ものであり、無電解ニッケル合金めっき皮膜の組成は、
還元剤に起因する元素(燐、ホウ素、窒素等)を含有し
てニッケルとの合金になるのが通常で、無電解ニッケル
/燐合金めっき皮膜、無電解ニッケル/ホウ素合金めっ
き皮膜等である。この無電解ニッケル合金めっき皮膜
は、80重量%以上の純度のニッケルであることが好ま
しく、80重量%未満であれば、接続の信頼性が低下す
る場合もある。また、90重量%以上の純度であればよ
り好ましい。無電解ニッケル合金めっき皮膜の膜厚は、
0.1μm〜20μmであることが好ましく、0.1μ
m未満では、めっきの効果がなく接続の信頼性が向上せ
ず、20μmを越えると、効果がそれ以上に向上せず、
経済的でないので好ましくない。さらには、この無電界
ニッケル合金めっきの厚さは、0.5〜10μmの範囲
であることがより好ましい。
[0013] The material of the solder ball connection terminal is copper,
Metals such as tungsten and molybdenum can be used. The surface treatment of the conductor of the present invention is electroless nickel alloy plating, in which nickel ions in the plating solution are activated by the movement of a reducing agent for nickel ions, and the surface of the conductor, such as copper, tungsten, or molybdenum, is activated. The composition of the electroless nickel alloy plating film is
Usually, it contains an element (phosphorus, boron, nitrogen, etc.) derived from a reducing agent and becomes an alloy with nickel, such as an electroless nickel / phosphorus alloy plating film and an electroless nickel / boron alloy plating film. The electroless nickel alloy plating film is preferably made of nickel having a purity of 80% by weight or more, and if less than 80% by weight, the reliability of the connection may be reduced. Further, it is more preferable that the purity is 90% by weight or more. The thickness of the electroless nickel alloy plating film is
0.1 μm to 20 μm, preferably 0.1 μm
If it is less than m, there is no plating effect and the connection reliability does not improve, and if it exceeds 20 μm, the effect does not improve further,
It is not preferable because it is not economical. Further, the thickness of the electroless nickel alloy plating is more preferably in the range of 0.5 to 10 μm.

【0014】無電解パラジウムめっきは、めっき液中の
パラジウムイオンを還元剤の働きによってニッケル表面
にパラジウムを析出させたものであり、還元剤に蟻酸化
合物を使用すると無電解パラジウムめっき皮膜の純度が
99重量%以上になるので、接続の信頼性が高く好まし
く、また、還元剤に燐含有化合物、ホウ素含有化合物を
使用するとめっき皮膜がパラジウム−燐、パラジウム−
ホウ素合金になり、パラジウムの純度が90重量%以上
になるが、はんだボール接続信頼性は問題ない。このパ
ラジウムの純度は90重量%以上の純度のパラジウムで
あれば良い。この無電解パラジウムめっき皮膜の膜厚
は、0.01μm〜5μmであることが好ましく、0.
01μm未満では、めっきの効果がなく接続の信頼性が
向上せず、1μmを越えると、効果がそれ以上に向上せ
ず、経済的でないので好ましくない。さらに、この無電
解パラジウムの厚さは、0.01〜1μmの範囲である
ことがより好ましい。
In the electroless palladium plating, palladium ions in a plating solution are deposited on the nickel surface by the action of a reducing agent. When a formic acid compound is used as the reducing agent, the purity of the electroless palladium plating film is 99%. % By weight or more, the connection reliability is high and preferable. When a phosphorus-containing compound or a boron-containing compound is used as a reducing agent, the plating film becomes palladium-phosphorous or palladium-containing.
Although it becomes a boron alloy and the purity of palladium becomes 90% by weight or more, there is no problem in the solder ball connection reliability. The purity of the palladium may be 90% by weight or more. The thickness of the electroless palladium plating film is preferably 0.01 μm to 5 μm,
If it is less than 01 μm, there is no effect of plating and the connection reliability is not improved. If it exceeds 1 μm, the effect is not further improved and it is not economical. Further, the thickness of the electroless palladium is more preferably in the range of 0.01 to 1 μm.

【0015】無電解金めっきのうち、置換型無電解金め
っきは、下地のニッケルと溶液中の金イオンとの置換反
応によってニッケル表面に金皮膜を形成するものであ
り、めっき液には、シアン化合物を含むものと含まない
ものがあるが、いずれのめっき液でも使用できる。ま
た、無電解金めっきのうち、還元型無電解金めっきは、
還元剤の働きによって置換型無電解金めっき皮膜の上に
金を化学反応で析出させるものであり、還元剤にはホウ
素を含むものやイオウを含むものが使用できる。この無
電解金めっき皮膜は、99重量%以上の純度の金である
ことが好ましく、99重量%未満であれば、接続の信頼
性が低下する場合もある。さらに、この無電界金めっき
皮膜の純度は、99.5重量%以上であることがより好
ましい。無電解めっき皮膜の膜厚は、0.005μm〜
3μmであることが好ましく、0.005μm未満で
は、めっきの効果がなく接続の信頼性が向上せず、3μ
mを越えると、効果がそれ以上に向上せず、経済的でな
いので好ましくない。さらには、この無電界金めっき皮
膜の厚さは、0.005〜0.5μmの範囲であること
がより好ましい。
Among the electroless gold platings, the substitutional electroless gold plating forms a gold film on the nickel surface by a substitution reaction between the underlying nickel and gold ions in the solution. Some plating solutions include compounds and some do not, but any plating solution can be used. Among electroless gold plating, reduction type electroless gold plating is
The action of the reducing agent causes gold to be deposited on the substitutional electroless gold plating film by a chemical reaction. As the reducing agent, those containing boron or those containing sulfur can be used. The electroless gold plating film is preferably gold having a purity of 99% by weight or more, and if it is less than 99% by weight, the reliability of connection may be reduced. Further, the purity of the electroless gold plating film is more preferably 99.5% by weight or more. The thickness of the electroless plating film is 0.005 μm or more.
When the thickness is less than 0.005 μm, there is no effect of plating and the reliability of the connection is not improved.
If it exceeds m, the effect is not further improved and it is not economical, so that it is not preferable. Further, the thickness of the electroless gold plating film is more preferably in the range of 0.005 to 0.5 μm.

【0016】本発明は、また、そのはんだボール接続用
端子である導体の端子上に、熱処理によってせん断強度
が10%以上増加しない組成のはんだボールを用いるこ
とを特徴とするものである。
The present invention is also characterized in that a solder ball having a composition whose shear strength does not increase by 10% or more by heat treatment is used on a terminal of a conductor which is a terminal for connecting the solder ball.

【0017】この熱処理によってせん断強度が10%以
上に増加しないことは、そのせん断強度を、熱処理する
前に、図1に示すように、球状のはんだボールまたは円
筒状のはんだ線を固定台に接着して、せん断ツール兼強
度センサーを水平方向に毎秒0.3mmの速度で移動さ
せて、その際に強度センサーにかかる最大負荷重量を測
定しておき、0℃以上で170℃以下の放置処理、また
は−100℃以上で170℃以下の範囲内で交互に温度
を変化させる冷熱サイクル処理を行って、そのせん断強
度を、同じ方法で測定することにより確認できる。
The fact that the shear strength does not increase to 10% or more by this heat treatment means that, before the heat treatment, the spherical solder ball or the cylindrical solder wire is bonded to the fixing table as shown in FIG. Then, the shearing tool / strength sensor is moved in the horizontal direction at a speed of 0.3 mm / sec. At that time, the maximum load weight applied to the strength sensor is measured, and a leaving treatment at 0 ° C or higher and 170 ° C or lower is performed. Alternatively, it can be confirmed by performing a thermal cycling treatment in which the temperature is alternately changed within a range of -100 ° C or more and 170 ° C or less, and measuring the shear strength by the same method.

【0018】また、せん断強度の増加は5%以上に増加
しないものであればより好ましい。このようなはんだの
組成は、鉛と錫の合金である共晶はんだでも良く、また
鉛と錫の合金にさらにこれらの金属以外の銀、アンチモ
ン、銅、ニッケルの1種類以上の金属を含んでも良い。
また、鉛を含まない錫合金で錫以外の金属として銀、
銅、亜鉛、ニッケル、ビスマス、インジウム、ニッケル
の1種類以上を含むことを特徴とする錫合金でも良く、
上記のような方法で調査してせん断強度が10%以上に
ならないものであればどのようなものでも使用できる。
It is more preferable that the increase in shear strength does not increase to 5% or more. Such a composition of the solder may be a eutectic solder which is an alloy of lead and tin, or may further contain one or more metals of silver, antimony, copper and nickel other than these metals in the alloy of lead and tin. good.
In addition, silver as a metal other than tin in a tin alloy containing no lead,
Copper, zinc, nickel, bismuth, indium, a tin alloy containing at least one kind of nickel may be used,
Any material can be used as long as it does not exhibit a shear strength of 10% or more as determined by the method described above.

【0019】このような配線板を製造するには、はんだ
ボールを搭載するはんだボール接続用端子を有する基板
に、熱処理によってせん断強度が10%以上増加しない
組成のはんだペーストを塗布し、加熱・溶融してはんだ
ボールを形成することにより可能である。このはんだペ
ーストに代えて、はんだめっきを行うこともできる。
In order to manufacture such a wiring board, a solder paste having a composition whose shear strength does not increase by 10% or more by heat treatment is applied to a substrate having solder ball connection terminals on which solder balls are mounted, and heated and melted. This is possible by forming solder balls. Instead of this solder paste, solder plating can be performed.

【0020】[0020]

【実施例】実施例 厚さ18μmの銅箔を両面に貼り合わせた、厚さ0.5
mmの銅張りエポキシ積層板であるMCL−E−679
(日立化成工業株式会社製、商品名)の銅箔の不要な箇
所をエッチング除去し、エッチングレジストを剥離し、
半田レジストを形成した、導体パターンの露出した銅の
はんだボール接続用端子を有する半導体搭載用基板を作
製した。その半導体搭載用基板を、脱脂液であるZ−2
00(株式会社ワールドメタル製、商品名)に、液温5
0℃で1分間浸漬し、室温で2分間水洗し、100g/
リットルの過硫酸アンモニウム液に室温で1分間浸漬し
て、ソフトエッチングし、室温で2分間水洗し、10重
量%の硫酸に、室温で1分間浸漬して、酸洗し、室温で
2分間水洗し、無電解めっきの活性化を、SA−100
(日立化成工業株式会社製、商品名)に室温で5分間浸
漬し、室温で2分間浸漬し、無電解ニッケルめっき液で
あるNIPS−100(日立化成工業株式会社製、商品
名)に、液温85℃で20分間浸漬して、Ni−Pめっ
き(P含有量約7重量%)皮膜を形成し、室温で2分間
水洗し、無電解パラジウムめっき液であるパラテクト
(アトテックジャパン株式会社製、商品名)に、液温7
0℃で5分間浸漬し、純パラジウム(純度99.9重量
%)の皮膜を形成し、室温で2分間水洗し、非シアン系
の置換型無電解金めっき液であるHGS−100(日立
化成工業株式会社製、商品名)に、液温85℃で10分
間浸漬して、純金(純度99.9重量%))の皮膜を形
成した。上記方法で作成した半導体搭載用基板のはんだ
ボール接続用端子に、97.25重量%錫と3.5重量
%銀と0.75重量%銅の錫合金である150℃で10
0時間高温放置してせん断強度の変化が10%の減少で
あるはんだボールをリフロー炉で接続させた。
EXAMPLE A copper foil having a thickness of 18 μm was attached to both sides, and a thickness of 0.5
MCL-E-679 mm copper-clad epoxy laminate
Unnecessary portions of copper foil (made by Hitachi Chemical Co., Ltd.) are removed by etching, the etching resist is removed,
A semiconductor mounting substrate having a solder resist-formed copper solder ball connecting terminal with an exposed conductor pattern was prepared. The substrate for mounting a semiconductor was replaced with a degreasing liquid Z-2.
00 (made by World Metal Co., Ltd., trade name)
Immersed at 0 ° C for 1 minute, washed with water at room temperature for 2 minutes, 100 g /
Immersion in 1 liter of ammonium persulfate solution for 1 minute at room temperature, soft etching, washing with water for 2 minutes at room temperature, immersion in 10% by weight sulfuric acid for 1 minute at room temperature, pickling, washing with water for 2 minutes at room temperature Activation of electroless plating, SA-100
(Hitachi Kasei Kogyo Co., Ltd., trade name) for 5 minutes at room temperature, immersed for 2 minutes at room temperature, the solution into NIPS-100 (Hitachi Chemical Co., Ltd., trade name) which is an electroless nickel plating solution Immersion at a temperature of 85 ° C. for 20 minutes to form a Ni-P plating (P content: about 7% by weight) film, washing with water at room temperature for 2 minutes, and an electroless palladium plating solution, Paratec (manufactured by Atotech Japan KK) Product name), liquid temperature 7
Immersion at 0 ° C. for 5 minutes to form a film of pure palladium (purity 99.9% by weight), washing with water at room temperature for 2 minutes, and a non-cyanide substitution type electroless gold plating solution HGS-100 (Hitachi Chemical Co., Ltd.) (Trade name, manufactured by Kogyo Co., Ltd.) at a liquid temperature of 85 ° C. for 10 minutes to form a film of pure gold (purity: 99.9% by weight). The solder ball connecting terminals of the semiconductor mounting substrate prepared by the above method were added with a tin alloy of 97.25% by weight of tin, 3.5% by weight of silver and 0.75% by weight of copper at 150 ° C.
After leaving it at a high temperature for 0 hour, a solder ball whose change in shear strength was reduced by 10% was connected in a reflow furnace.

【0021】実施例2 金めっきに、シアン系の置換型無電解金めっき液である
IM−GOLD(日本高純度化学株式会社製、商品名)
に、液温85℃で10分間浸漬し、純金(純度99.9
重量%))の皮膜を形成し、室温で2分間水洗し、続い
て還元型無電解金めっき液であるHGS−2000(日
立化成工業株式会社製、商品名)に、液温65℃で40
分間浸漬し、純金(純度99.9重量%))の皮膜を形
成した以外は、実施例1と同様にして。はんだボール接
続用端子を有する半導体搭載用基板を作製した。上記方
法で作成した半導体搭載用基板のはんだボール接続用端
子に、97.25重量%錫と3.5重量%銀と0.75
重量%銅の錫合金である150℃で100時間高温放置してせ
ん断強度の変化が10%の減少であるはんだボールをリフ
ロー炉接続させた。
EXAMPLE 2 IM-GOLD (trade name, manufactured by Nippon Kojundo Chemical Co., Ltd.), which is a cyan substitutional electroless gold plating solution, was used for gold plating.
At 85 ° C. for 10 minutes in pure gold (purity 99.9).
% By weight), washed with water at room temperature for 2 minutes, and then added to HGS-2000 (manufactured by Hitachi Chemical Co., Ltd., trade name) as a reduction type electroless gold plating solution at a solution temperature of 65 ° C. for 40 minutes.
The same procedure as in Example 1 was conducted except that a film of pure gold (purity: 99.9% by weight) was formed by immersion for minutes. A semiconductor mounting substrate having solder ball connection terminals was prepared. 97.25% by weight of tin, 3.5% by weight of silver and 0.75% of
The solder ball whose shear strength was reduced by 10% was connected to a reflow furnace by being left at a high temperature of 150 ° C., which is a tin alloy of copper by weight, for 100 hours.

【0022】比較例1 実施例1と同様にして半導体搭載用基板を作製した。上
記方法で作成した半導体搭載用基板のはんだボール接続
用端子に、60重量%錫と40重量%の共晶はんだであ
り150℃で100時間高温放置してせん断強度の変化が40%
の増加であるはんだボールをリフロー炉で接続させた。
Comparative Example 1 A semiconductor mounting substrate was produced in the same manner as in Example 1. The solder ball connection terminal of the semiconductor mounting board prepared by the above method is a eutectic solder of 60% by weight of tin and 40% by weight.
Of solder balls, which is an increase in the number of solder balls, was connected in a reflow furnace.

【0023】比較例2 実施例2と同様にして半導体搭載用基板を作製した。上
記方法で作成した半導体搭載用基板のはんだボール接続
用端子に、60重量%錫と40重量%の共晶はんだはん
だであり150℃で100時間高温放置してせん断強度の変化
が40%の増加であるはんだボールをリフロー炉で接続さ
せた。
Comparative Example 2 A semiconductor mounting substrate was manufactured in the same manner as in Example 2. 60% by weight of tin and 40% by weight of eutectic solder solder on the terminal for solder ball connection of the semiconductor mounting substrate prepared by the above method. Was connected in a reflow furnace.

【0024】(せん断試験方法)はんだのせん断試験方
法は万能ボンドテスタを使用して行う。図に示すように
球状のはんだボールまたは円筒状のはんだ線を固定台に
接着して、せん断ツール兼強度センサーを水平方向に毎
秒0.3mmの速度で移動させて、その際に強度センサ
ーにかかる最大負荷重量からせん断強度を測定する。
(4000型、デイジ社製) 実施例1、2と比較例1、2で作製した、はんだボール
が接続したBGAを150℃、100時間の熱処理を行
った後、はんだボールのシェア(剪断)試験を行った結
果、実施例1、2のサンプルでは、全てのはんだボール
が、ボール内での剪断による破壊まで耐えることができ
たが、比較例1、2のはんだボールは、約90%の端子
において、無電解ニッケルめっきとはんだボールの界面
で破壊が発生し、熱処理後の接続信頼性が不良であっ
た。
(Shear Test Method) The shear test method for solder is performed using a universal bond tester. As shown in the figure, a spherical solder ball or a cylindrical solder wire is adhered to the fixed base, and the shearing tool / strength sensor is moved horizontally at a speed of 0.3 mm / sec. Measure the shear strength from the maximum load weight.
(4000 type, manufactured by Daiji Co., Ltd.) The BGAs produced in Examples 1 and 2 and Comparative Examples 1 and 2 to which solder balls were connected were subjected to a heat treatment at 150 ° C. for 100 hours, and then a shear (shear) test of the solder balls was performed. As a result, in the samples of Examples 1 and 2, all the solder balls were able to withstand the destruction due to the shearing in the balls, but the solder balls of Comparative Examples 1 and 2 had about 90% of the terminals. In the above, destruction occurred at the interface between the electroless nickel plating and the solder ball, and the connection reliability after the heat treatment was poor.

【0025】[0025]

【発明の効果】以上に説明したとおり、本発明によっ
て、接続信頼性に優れたはんだボールを有する配線板と
その製造方法を提供することができる。
As described above, according to the present invention, it is possible to provide a wiring board having solder balls having excellent connection reliability and a method for manufacturing the same.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の測定方法を説明するための概略側面図
である。
FIG. 1 is a schematic side view for explaining a measuring method of the present invention.

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 FI テーマコート゛(参考) B23K 3/06 B23K 3/06 H 31/02 310 31/02 310F H01L 23/12 501 H01L 23/12 501Z H05K 3/24 H05K 3/24 A Fターム(参考) 5E319 AC18 BB02 CC33 CD01 GG20 5E343 AA17 BB18 BB23 BB24 BB44 BB48 BB54 BB55 BB67 CC33 CC46 CC67 DD33 DD43 DD76 EE02 GG13 ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (Reference) B23K 3/06 B23K 3/06 H 31/02 310 31/02 310F H01L 23/12 501 H01L 23/12 501Z H05K 3/24 H05K 3/24 A F term (reference) 5E319 AC18 BB02 CC33 CD01 GG20 5E343 AA17 BB18 BB23 BB24 BB44 BB48 BB54 BB55 BB67 CC33 CC46 CC67 DD33 DD43 DD76 EE02 GG13

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】電解ニッケル合金めっき皮膜、無電解パラ
ジウムめっき皮膜、無電解金めっき皮膜が、その順に形
成された導体の端子上に、熱処理によってせん断強度が
10%以上増加しない組成のはんだボールを有する配線
板。
1. A solder ball having a composition whose shear strength does not increase by 10% or more due to heat treatment on a terminal of a conductor in which an electrolytic nickel alloy plating film, an electroless palladium plating film, and an electroless gold plating film are formed in this order. Having a wiring board.
【請求項2】熱処理が、0℃以上で170℃以下の放置
処理、または−100℃以上で170℃以下の範囲内で
交互に温度を変化させる冷熱サイクル処理のいずれかの
処理である請求項1に記載のはんだボールを有する配線
板。
2. The heat treatment is one of a leaving treatment at a temperature of 0 ° C. or more and 170 ° C. or less, or a cooling / heating cycle treatment of alternately changing the temperature within a range of −100 ° C. or more and 170 ° C. or less. A wiring board having the solder ball according to 1.
【請求項3】はんだボールを搭載するはんだボール接続
用端子であって、電解ニッケル合金めっき皮膜、無電解
パラジウムめっき皮膜、無電解金めっき皮膜が、その順
に形成された導体の端子を有する基板に、熱処理によっ
てせん断強度が10%以上増加しない組成のはんだペー
ストを塗布し、加熱・溶融してはんだボールを形成する
配線板の製造法。
3. A solder ball connecting terminal for mounting a solder ball, wherein an electrolytic nickel alloy plating film, an electroless palladium plating film, and an electroless gold plating film are formed on a substrate having conductor terminals formed in this order. And a method of manufacturing a wiring board in which a solder paste having a composition whose shear strength does not increase by 10% or more by heat treatment is applied, and heated and melted to form a solder ball.
【請求項4】はんだボールを搭載するはんだボール接続
用端子であって、電解ニッケル合金めっき皮膜、無電解
パラジウムめっき皮膜、無電解金めっき皮膜が、その順
に形成された導体の端子を有する基板に、熱処理によっ
てせん断強度が10%以上増加しない組成のはんだめっ
きを行い、加熱・溶融してはんだボールを形成する配線
板の製造法。
4. A solder ball connection terminal for mounting a solder ball, wherein an electrolytic nickel alloy plating film, an electroless palladium plating film, and an electroless gold plating film are formed on a substrate having conductor terminals formed in this order. And a method of manufacturing a wiring board in which solder plating is performed so that the shear strength does not increase by 10% or more due to heat treatment, and the solder ball is formed by heating and melting.
【請求項5】熱処理が、0℃以上で170℃以下の放置
処理、または−100℃以上で170℃以下の範囲内で
交互に温度を変化させる冷熱サイクル処理のいずれかの
処理である請求項3または4に記載の配線板の製造法。
5. The method according to claim 1, wherein the heat treatment is any one of a leaving treatment at a temperature of 0 ° C. or more and 170 ° C. or less, and a cooling / heating cycle treatment of alternately changing the temperature within a range of −100 ° C. or more and 170 ° C. 5. The method for producing a wiring board according to 3 or 4.
JP2001082979A 2001-03-22 2001-03-22 Wiring board equipped with solder ball and its manufacturing method Pending JP2002280731A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001082979A JP2002280731A (en) 2001-03-22 2001-03-22 Wiring board equipped with solder ball and its manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001082979A JP2002280731A (en) 2001-03-22 2001-03-22 Wiring board equipped with solder ball and its manufacturing method

Publications (2)

Publication Number Publication Date
JP2002280731A true JP2002280731A (en) 2002-09-27
JP2002280731A5 JP2002280731A5 (en) 2007-05-31

Family

ID=18938860

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001082979A Pending JP2002280731A (en) 2001-03-22 2001-03-22 Wiring board equipped with solder ball and its manufacturing method

Country Status (1)

Country Link
JP (1) JP2002280731A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2100328A1 (en) * 2006-12-11 2009-09-16 FlipChip International L.L.C. Solder bump/under bump metallurgy structure for high temperature applications

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2100328A1 (en) * 2006-12-11 2009-09-16 FlipChip International L.L.C. Solder bump/under bump metallurgy structure for high temperature applications
EP2100328A4 (en) * 2006-12-11 2011-12-07 Flipchip Internat L L C Solder bump/under bump metallurgy structure for high temperature applications

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