JP2002261374A - Package for storing optical semiconductor element and optical semiconductor device - Google Patents

Package for storing optical semiconductor element and optical semiconductor device

Info

Publication number
JP2002261374A
JP2002261374A JP2001053282A JP2001053282A JP2002261374A JP 2002261374 A JP2002261374 A JP 2002261374A JP 2001053282 A JP2001053282 A JP 2001053282A JP 2001053282 A JP2001053282 A JP 2001053282A JP 2002261374 A JP2002261374 A JP 2002261374A
Authority
JP
Japan
Prior art keywords
optical semiconductor
semiconductor element
optical
input
mounting portion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001053282A
Other languages
Japanese (ja)
Inventor
Kazuhiro Kawabata
和弘 川畑
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP2001053282A priority Critical patent/JP2002261374A/en
Publication of JP2002261374A publication Critical patent/JP2002261374A/en
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To enhance airtightness of an optical semiconductor element, optical coupling efficiency of the optical semiconductor element and an optical fiber, high frequency transmission characteristics of the optical semiconductor element and an I/O terminal, and heat dissipation properties of the optical semiconductor element during operation. SOLUTION: In a substantially rectangular prism basic body 2 having a part 2a for mounting an optical semiconductor element 1 on the bottom face of a recess made in the upper surface, an optical fiber securing member fixing part in the form of a through hole 2c made in the recess from one side part, and an I/O terminal fixing part 2d in the form of a through opening or a cut made in the recess from the other side part, and provided with screw fixing parts 2b in the form of a through hole or a cut at the parts stretching outward from the outer surface at the lower end of opposite side parts, a basic material m composed of a metal carbon complex A where an aggregate of unilateral carbon fibers 1 is dispersed into a carbonaceous parent material impregnated with copper and/or silver n is coated with a copper plating layer B on the surface thereof.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、半導体レーザ(L
D),フォトダイオード(PD)等の光半導体素子を収
容するための光半導体素子収納用パッケージ、およびそ
の光半導体素子収納用パッケージを用いた光半導体装置
に関する。
The present invention relates to a semiconductor laser (L).
D), an optical semiconductor element housing package for housing an optical semiconductor element such as a photodiode (PD), and an optical semiconductor device using the optical semiconductor element housing package.

【0002】[0002]

【従来の技術】従来の光半導体素子収納用パッケージ
(以下、光半導体パッケージという)を図3〜図5にそ
れぞれ平面図,断面図および部分拡大断面図で示す(特
開2000−150746号公報参照)。
2. Description of the Related Art A conventional optical semiconductor element housing package (hereinafter referred to as an optical semiconductor package) is shown in FIGS. 3 to 5 in plan view, sectional view and partially enlarged sectional view, respectively (see Japanese Patent Application Laid-Open No. 2000-150746). ).

【0003】この光半導体パッケージは、上面に光半導
体素子101がペルチェ素子等の熱電冷却素子105を
介して載置される載置部102aを有するとともに、相
対する面の端部に貫通穴または切欠きから成るネジ取付
部102bを有する基体102を有する。また、基体1
02の上面に載置部102aを囲繞するように銀ロウ等
のロウ材で接合されるとともに、一側部に形成された光
信号の経路と成る貫通孔103aと、他の側部に形成さ
れた貫通開口または切欠き部から成る入出力端子取付部
103bが設けられた枠体103を有する。また、入出
力端子取付部103bに嵌着された入出力端子106を
有している。さらに、貫通孔103aには、内周面に集
光用レンズとして機能する透光性部材108がロウ付け
されるとともに光信号を光半導体パッケージ内外に伝送
する光ファイバ(図示せず)を固定する筒状の光ファイ
バ固定部材107が嵌着されて成る。
This optical semiconductor package has a mounting portion 102a on the upper surface on which an optical semiconductor device 101 is mounted via a thermoelectric cooling element 105 such as a Peltier device, and a through hole or a cutout at an end of the opposing surface. It has a base 102 having a screw mounting portion 102b composed of a notch. Also, the base 1
02, the through-hole 103a which is formed on one side and serves as an optical signal path, and which is formed on the other side. Frame 103 provided with an input / output terminal mounting portion 103b formed of a through opening or a notch. Further, it has an input / output terminal 106 fitted to the input / output terminal mounting portion 103b. Further, a translucent member 108 functioning as a condensing lens is brazed to the inner peripheral surface of the through hole 103a, and an optical fiber (not shown) for transmitting an optical signal into and out of the optical semiconductor package is fixed. A cylindrical optical fiber fixing member 107 is fitted.

【0004】また、入出力端子106には、メタライズ
層106aが枠体103を挿通するように形成されると
ともに、外部電気回路(図示せず)に接合されるリード
端子107が枠体103外側のメタライズ層106aに
銀ロウ等のロウ材を介して接合される。
A metallization layer 106a is formed in the input / output terminal 106 so as to pass through the frame 103, and a lead terminal 107 to be connected to an external electric circuit (not shown) is provided on the outside of the frame 103. It is joined to the metallization layer 106a via a brazing material such as silver brazing.

【0005】また、シールリング104は、ほぼ面一と
なる、枠体103上面と入出力端子106上面に銀ロウ
等のロウ材で接合され、光半導体パッケージに蓋体(図
示せず)をシーム溶接やロウ付けする際の接合媒体とし
て機能する。
[0005] The seal ring 104 is joined to the upper surface of the frame 103 and the upper surface of the input / output terminal 106, which are substantially flush with each other, with a brazing material such as silver brazing, and a cover (not shown) is seamed to the optical semiconductor package. It functions as a joining medium when welding or brazing.

【0006】なお、基体102は、その上面側から下面
側にかけて一方向に配列した一方向性炭素繊維を炭素で
結合した一方向性炭素複合材料から成る。その一方向性
炭素複合材料は、横方向(一方向性炭素繊維の方向に垂
直な方向)の弾性率が非常に低く、かつその熱膨張係数
が約7ppm/℃(×10-6/℃)であり、その上下面
に、クロム(Cr)−Fe合金から成る第1層と、銅
(Cu)から成る第2層と、Fe−Ni−Co合金から
成る第3層の3層構造を有する金属層が被着されてい
る。これにより、横方向の熱膨張係数を10〜13pp
m/℃に調整したものである。
The base 102 is made of a unidirectional carbon composite material in which unidirectional carbon fibers arranged in one direction from the upper surface side to the lower surface side are bonded with carbon. The unidirectional carbon composite has a very low modulus of elasticity in the transverse direction (perpendicular to the direction of the unidirectional carbon fibers) and a coefficient of thermal expansion of about 7 ppm / ° C. (× 10 −6 / ° C.). And a three-layer structure of a first layer made of chromium (Cr) -Fe alloy, a second layer made of copper (Cu), and a third layer made of Fe-Ni-Co alloy on the upper and lower surfaces. A metal layer has been applied. Thereby, the coefficient of thermal expansion in the lateral direction is 10 to 13 pp.
m / ° C.

【0007】なお、基体102の縦方向(一方向性炭素
繊維の方向に平行な方向)の熱膨張係数は、一方向性炭
素繊維の縦方向の弾性率が非常に高いため、一方向性炭
素繊維の縦方向の熱膨張係数(殆ど約0ppm/℃)に
近似したものとなる。
The thermal expansion coefficient of the substrate 102 in the longitudinal direction (the direction parallel to the direction of the unidirectional carbon fiber) is very high because the elastic modulus in the longitudinal direction of the unidirectional carbon fiber is very high. It is close to the coefficient of thermal expansion in the longitudinal direction of the fiber (almost about 0 ppm / ° C.).

【0008】また、この基体102は、縦方向の熱伝導
率が約300W/m・K以上と非常に高いのに対し、横
方向の熱伝導率は、それぞれの一方向性炭素繊維の間に
非常に多くの気孔を有しているため約30W/m・K以
下と非常に低く、縦方向と横方向とで熱伝導率が大きく
異なっている。
The base 102 has a very high thermal conductivity of about 300 W / m · K or more in the vertical direction, while the thermal conductivity in the horizontal direction is between the unidirectional carbon fibers. Since it has a very large number of pores, it is extremely low at about 30 W / m · K or less, and the thermal conductivity is largely different between the vertical direction and the horizontal direction.

【0009】このような基体102は、ネジ取付部10
2bを介して外部電気回路のヒートシンク部にネジ止め
されて密着固定されることにより、光半導体素子101
が作動時に発する熱を効率良くヒートシンク部に伝える
所謂放熱板としての機能を有する。
[0009] Such a base 102 is provided with the screw mounting portion 10.
The optical semiconductor element 101 is screwed to a heat sink portion of an external electric circuit via the second semiconductor chip 2b and fixed in close contact therewith.
Has a function as a so-called heat sink that efficiently transmits heat generated during operation to the heat sink.

【0010】このような基体102を有する光半導体パ
ッケージに光半導体素子101を載置固定した後、光半
導体素子101とメタライズ層106aとをボンディン
グワイヤ(図示せず)で電気的に接続し、蓋体により光
半導体素子101を気密に封止することにより、製品と
しての光半導体装置となる。なお、光半導体素子101
は、外部電気回路から入力される高周波信号、または光
ファイバから入力される光信号により作動する。
After the optical semiconductor element 101 is mounted and fixed on the optical semiconductor package having such a base 102, the optical semiconductor element 101 and the metallized layer 106a are electrically connected by a bonding wire (not shown), and a cover is formed. By optically sealing the optical semiconductor element 101 with a body, an optical semiconductor device as a product is obtained. The optical semiconductor element 101
Is operated by a high-frequency signal input from an external electric circuit or an optical signal input from an optical fiber.

【0011】[0011]

【発明が解決しようとする課題】しかしながら、基体1
02の上面に接合される枠体103が基体102の上面
の所定の位置に無い場合、即ち枠体103の接合位置が
ずれて接合された場合、基体102と枠体103との間
に隙間ができて、光半導体素子101の気密性が損なわ
れるという問題点があった。
However, the substrate 1
02 is not at a predetermined position on the upper surface of the base 102, that is, when the bonding position of the frame 103 is shifted, a gap is formed between the base 102 and the frame 103. As a result, there is a problem that the airtightness of the optical semiconductor element 101 is impaired.

【0012】また、光半導体素子101を基体102の
端面に平行となるように載置部102aに載置固定した
際、光半導体素子101と、枠体103の一側部に対し
てほぼ垂直方向に伸びるように光ファイバ固定部材10
7に固定される光ファイバとの光軸の調整が非常に困難
となる。即ち、光半導体素子101と光ファイバとの光
の結合効率が低くなるため、光半導体素子101が誤作
動する等の問題点を有していた。
When the optical semiconductor element 101 is mounted and fixed on the mounting portion 102a so as to be parallel to the end face of the base 102, the optical semiconductor element 101 and one side of the frame 103 are substantially perpendicular to the optical semiconductor element 101. Optical fiber fixing member 10
It becomes very difficult to adjust the optical axis with the optical fiber fixed to 7. That is, the optical coupling efficiency between the optical semiconductor element 101 and the optical fiber is reduced, and thus the optical semiconductor element 101 has a problem such as malfunction.

【0013】さらに、このような従来の構成では、光半
導体素子101の電極と入出力端子106のメタライズ
層106aがボンディングワイヤで接続されるべき所定
の位置からずれるため、光半導体素子101と入出力端
子106との電気的接続を行うためのボンディングワイ
ヤ(図示せず)の長さが非常に長くなる部位が生じる。
このため、この部位におけるインピーダンスが大きくな
る。その結果、光半導体素子101と入出力端子106
との高周波信号の伝送特性が損なわれるという問題点を
有していた。
Further, in such a conventional configuration, since the electrode of the optical semiconductor element 101 and the metallized layer 106a of the input / output terminal 106 are displaced from a predetermined position to be connected by a bonding wire, the input / output of the optical semiconductor element 101 There is a portion where the length of a bonding wire (not shown) for making an electrical connection with the terminal 106 becomes extremely long.
Therefore, the impedance at this portion increases. As a result, the optical semiconductor element 101 and the input / output terminal 106
However, there is a problem that the transmission characteristics of the high-frequency signal are deteriorated.

【0014】なお、このような問題点を解決する手段と
して、枠体103の端面(側面)を光半導体素子101
に対するアライメント面として、光半導体素子101の
一側面を枠体103の端面に平行となるように載置部1
02aに載置固定することも考えられるが、枠体103
を基体102の上面に対して正確に垂直に設置すること
が困難なため、基体102の上面に対して光ファイバが
正確に平行とはなり難い。また、そのような光軸がずれ
た光ファイバを有する光半導体装置が多数ある場合、光
ファイバの光軸を外部電気回路上で個々に調整しようと
すると、調整作業が非常に煩雑なものとなる。
As a means for solving such a problem, an end face (side face) of the frame 103 is attached to the optical semiconductor element 101.
Of the optical semiconductor element 101 so as to be parallel to the end face of the frame 103 as an alignment surface for
02a may be fixed.
Since it is difficult to accurately set the optical fiber perpendicular to the upper surface of the base 102, it is difficult for the optical fiber to be exactly parallel to the upper surface of the base 102. In addition, when there are a large number of optical semiconductor devices having optical fibers with such shifted optical axes, if the optical axes of the optical fibers are individually adjusted on an external electric circuit, the adjustment work becomes very complicated. .

【0015】また、光半導体素子101が作動時に発す
る熱量が非常に大きい場合、その熱は、基体102上面
の熱電冷却素子105が接合されている接合部(載置部
102a)からほぼ直下のみにしか伝わらないことと、
Fe−Ni−Co合金等から成る枠体103の熱伝導率
が約17W/m・Kであり基体102に比し非常に低い
ことから、熱は基体102と枠体103とで構成される
空所(内部空間)に蓄熱され、その結果光半導体素子1
01の作動性を損なわせたり、熱破壊させたりするとい
った問題点があった。
When the amount of heat generated by the optical semiconductor element 101 during operation is very large, the heat is transferred only almost immediately below the junction (mounting part 102a) of the upper surface of the base 102 where the thermoelectric cooling element 105 is joined. That it can only be transmitted
Since the thermal conductivity of the frame 103 made of an Fe—Ni—Co alloy or the like is about 17 W / m · K, which is much lower than that of the base 102, the heat is generated by the space formed by the base 102 and the frame 103. Heat is stored in a place (internal space), and as a result, the optical semiconductor element 1
There are problems such as impairing the operability of No. 01 and heat destruction.

【0016】このような問題点を解決する手段として、
熱電冷却素子105を大型化し熱伝達の効率を向上させ
ることも考えられるが、この場合光半導体パッケージが
大型化し近時の小型化,軽量化といった動向から外れる
ことになる。
As means for solving such a problem,
It is conceivable to increase the size of the thermoelectric cooling element 105 to improve the efficiency of heat transfer. However, in this case, the size of the optical semiconductor package is increased, which is out of the trend of recent miniaturization and weight reduction.

【0017】また、光半導体パッケージと外部電気回路
のヒートシンク部との密着固定を強固なものとし、ヒー
トシンク部への熱伝達効率を高めるために、ネジ取付部
102bをネジでヒートシンク部に高いトルクで締め付
けると、圧縮強度が金属に比べて桁違いに小さいネジ取
付部102bが厚さ方向に潰れてしまい、光半導体パッ
ケージとヒートシンク部との密着固定ができなくなる。
そのため、光半導体素子101の発する熱をヒートシン
ク部に良好に伝達できなくなり、光半導体素子101の
作動性を損なわせたり、熱破壊させたりする等の問題点
を有していた。
Further, in order to strengthen the close contact between the optical semiconductor package and the heat sink portion of the external electric circuit, and to increase the efficiency of heat transfer to the heat sink portion, the screw mounting portion 102b is screwed to the heat sink portion with a high torque. When tightened, the screw mounting portion 102b, whose compressive strength is significantly smaller than that of metal, is crushed in the thickness direction, and it becomes impossible to tightly fix the optical semiconductor package and the heat sink.
For this reason, the heat generated by the optical semiconductor element 101 cannot be transmitted to the heat sink portion satisfactorily, and there is a problem that the operability of the optical semiconductor element 101 is impaired, or the optical semiconductor element 101 is destroyed by heat.

【0018】従って、本発明は上記問題点に鑑み完成さ
れたものであり、その目的は、LD,PD等の光半導体
素子の気密性を確実なものとし、また光半導体素子と光
ファイバとの光の結合効率を良好なものとし、さらに光
半導体素子と入出力端子との高周波伝送特性を良好なも
のとすることである。また、光半導体素子の作動時に発
する熱を効率良く大気中やヒートシンク部に伝えること
とにより、光半導体素子を長期間にわたり正常かつ安定
に作動させることである。
Accordingly, the present invention has been completed in view of the above problems, and an object of the present invention is to ensure the airtightness of an optical semiconductor device such as an LD and a PD, and to establish a connection between the optical semiconductor device and an optical fiber. It is an object to improve the light coupling efficiency and to improve the high-frequency transmission characteristics between the optical semiconductor element and the input / output terminal. It is another object of the present invention to operate the optical semiconductor element normally and stably for a long period of time by efficiently transmitting the heat generated during the operation of the optical semiconductor element to the atmosphere or a heat sink.

【0019】[0019]

【課題を解決するための手段】本発明の光半導体パッケ
ージは、略直方体状とされ、上面に形成された凹部の底
面に光半導体素子を載置するための載置部および一側部
から前記凹部にかけて形成された貫通孔から成る光ファ
イバ固定部材取付部ならびに他の側部から前記凹部にか
けて形成された貫通開口または切欠き部から成る入出力
端子取付部を有するとともに、対向する前記側部外面の
下端に外側に突出するように形成された張出部に貫通穴
または切欠きから成るネジ取付部が設けられた基体と、
前記光ファイバ固定部材取付部に嵌着された筒状の光フ
ァイバ固定部材と、前記入出力端子取付部に嵌着された
入出力端子とを具備した光半導体素子収納用パッケージ
において、前記基体は、銅および/または銀が含浸され
た炭素質母材内に一方向性炭素繊維の集合体が分散され
た金属炭素複合体から成る基材の表面に、銅メッキ層が
被着されて成ることを特徴とする。
An optical semiconductor package according to the present invention has a substantially rectangular parallelepiped shape, and has a mounting portion for mounting an optical semiconductor element on a bottom surface of a concave portion formed on an upper surface and a side portion from above. An optical fiber fixing member mounting portion comprising a through hole formed over the concave portion, and an input / output terminal mounting portion comprising a through opening or a notch portion formed from the other side portion to the concave portion, and the outer surface of the side portion facing the side portion A base provided with a screw mounting portion comprising a through hole or a notch in an overhang portion formed so as to protrude outward at a lower end of the base;
In a package for housing an optical semiconductor element comprising a cylindrical optical fiber fixing member fitted to the optical fiber fixing member mounting portion and an input / output terminal fitted to the input / output terminal mounting portion, the base is A copper-plated layer is applied to the surface of a base material made of a metal-carbon composite in which an aggregate of unidirectional carbon fibers is dispersed in a carbonaceous base material impregnated with copper and / or silver It is characterized by.

【0020】本発明は、上記の構成により、光半導体素
子の気密性、光半導体素子と光ファイバとの光の結合効
率、光半導体素子と入出力端子との高周波伝送特性、光
半導体素子の作動時に発する熱の伝達性、および基体の
剛性を良好なものとできる。その結果、光半導体素子を
長期間にわたり正常かつ安定に作動させ得る。
According to the present invention, the airtightness of the optical semiconductor device, the coupling efficiency of light between the optical semiconductor device and the optical fiber, the high-frequency transmission characteristics between the optical semiconductor device and the input / output terminal, the operation of the optical semiconductor device, It is possible to improve the transmission of the heat generated sometimes and the rigidity of the substrate. As a result, the optical semiconductor element can be normally and stably operated for a long time.

【0021】本発明の光半導体装置は、本発明の光半導
体素子収納用パッケージと、前記載置部に載置固定され
前記入出力端子に電気的に接続された光半導体素子と、
前記基体の上面に接合された蓋体とを具備したことを特
徴とする。
An optical semiconductor device according to the present invention comprises: an optical semiconductor element storage package according to the present invention; an optical semiconductor element mounted and fixed on the mounting portion and electrically connected to the input / output terminal;
A lid joined to the upper surface of the base.

【0022】本発明は、このような構成により、上記光
半導体パッケージを用いた信頼性の高い光半導体装置を
提供できる。
The present invention can provide a highly reliable optical semiconductor device using the above optical semiconductor package.

【0023】[0023]

【発明の実施の形態】本発明の半導体パッケージを以下
に詳細に説明する。図1および図2は、本発明の光半導
体パッケージについて実施の形態の一例を示すものであ
り、図1は光半導体パッケージの断面図、図2は光半導
体パッケージの基体の部分拡大断面図を示す。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The semiconductor package of the present invention will be described in detail below. 1 and 2 show an example of an embodiment of an optical semiconductor package of the present invention. FIG. 1 is a sectional view of the optical semiconductor package, and FIG. 2 is a partially enlarged sectional view of a base of the optical semiconductor package. .

【0024】図1において、1は光半導体素子、2は金
属炭素複合体Aから成る基材の表面に銅メッキ層Bが形
成された基体、3は基体2の上面に接合されたシールリ
ング、4は基体2の取付部2bに嵌着された入出力端
子、6は基体2の貫通孔2cから成る光ファイバ固定部
材取付部に嵌着された筒状の光ファイバ固定部材(以
下、固定部材という)であり、これら基体2,シールリ
ング3,入出力端子4,固定部材6とで光半導体素子1
を内部に収容する容器が主に構成される。
In FIG. 1, 1 is an optical semiconductor element, 2 is a base having a copper-plated layer B formed on the surface of a base made of a metal-carbon composite A, 3 is a seal ring bonded to the upper surface of the base 2, Reference numeral 4 denotes an input / output terminal fitted to the mounting portion 2b of the base 2, and 6 denotes a cylindrical optical fiber fixing member (hereinafter, fixing member) fitted to the optical fiber fixing member mounting portion formed of the through hole 2c of the base 2. The substrate 2, the seal ring 3, the input / output terminal 4, and the fixing member 6
Is mainly configured.

【0025】また、図2において、Bは銅メッキ層、l
は一方向性炭素繊維、mは炭素質母材、nは銅および/
または銀、Aは一方向性炭素繊維l,炭素質母材m,銅
および/または銀nから成る金属炭素複合体であり、基
体2は金属炭素複合体Aから成る基材の表面に銅メッキ
層Bを被着して成る。
Further, in FIG. 2, B is a copper plating layer, l
Is a unidirectional carbon fiber, m is a carbonaceous matrix, n is copper and / or
Alternatively, silver and A are metal-carbon composites composed of unidirectional carbon fiber l, carbonaceous matrix m, copper and / or silver n, and base 2 is made of copper plating on the surface of a base made of metal-carbon composite A Layer B is applied.

【0026】図2に示すように、金属炭素複合体Aは、
銅および/または銀nが含浸された炭素質母材m内に一
方向性炭素繊維lの集合体が分散されたものである。こ
のような金属炭素複合体Aは、例えば以下の工程[1]
〜[6]のようにして作製される。
As shown in FIG. 2, the metal-carbon composite A is
An aggregate of unidirectional carbon fibers 1 is dispersed in a carbonaceous base material m impregnated with copper and / or silver n. Such a metal-carbon composite A is prepared, for example, by the following step [1]:
To [6].

【0027】[1]一方向性の炭素繊維の束を炭素で結
合したブロックを小さな炭素繊維の集合体に破砕し、破
砕された炭素繊維の集合体を集めて固体のピッチあるい
はコークス等の微粉末を分散させたフェノール樹脂等の
熱硬化性樹脂の溶液中に浸す。なお、ブロックを破砕し
て得られる小塊の大きさは矩形のものに換算して一辺が
約0.1〜1mm程度である。
[1] A block in which unidirectional bundles of carbon fibers are bonded with carbon is crushed into small carbon fiber aggregates, and the crushed carbon fiber aggregates are collected to obtain solid pitch or fine coke or the like. The powder is immersed in a solution of a thermosetting resin such as a phenol resin in which the powder is dispersed. In addition, the size of the small block obtained by crushing the block is approximately 0.1 to 1 mm on one side when converted to a rectangular one.

【0028】[2]これを乾燥させて所定の圧力を加え
るとともに加熱して熱硬化性樹脂部分を硬化させる。
[2] This is dried, heated at a predetermined pressure and heated to cure the thermosetting resin portion.

【0029】[3]不活性雰囲気中、高温で焼成するこ
とでフェノール樹脂とピッチあるいはコークスの微粉末
を炭化させて炭素質母材mとする。炭素質母材mは、そ
れ自体200〜300W/m・Kの大きな熱伝導率を有
し、光半導体素子1の発する熱の伝熱経路としても機能
する。
[3] By firing at a high temperature in an inert atmosphere, the phenol resin and the fine powder of pitch or coke are carbonized to obtain a carbonaceous base material m. The carbonaceous preform m itself has a large thermal conductivity of 200 to 300 W / m · K, and also functions as a heat transfer path for the heat generated by the optical semiconductor element 1.

【0030】[4]炭素質母材m内に銅および/または
銀nを高温、高圧のもとで溶融させて含浸させたブロッ
クとなす。含浸された銅および/または銀nは塊状また
は薄板状であり、炭素質母材m内に分散されることとな
る。このブロックを板状に切り出して金属炭素複合体A
となる板が作製され、この板の寸法は、例えば厚さが
0.5〜2mm程度、平面視における縦×横の寸法が1
00mm角程度である。
[4] A block in which copper and / or silver n is melted and impregnated in a carbonaceous base material m under high temperature and high pressure. The impregnated copper and / or silver n is in the form of a lump or a thin plate and is dispersed in the carbonaceous matrix m. This block is cut out into a plate shape and the metal-carbon composite A
The dimensions of the plate are, for example, about 0.5 to 2 mm in thickness, and 1 × length × width in plan view.
It is about 00 mm square.

【0031】[5]この板を所望の形状に加工して金属
炭素複合体Aから成る基材を作製する。
[5] This plate is processed into a desired shape to prepare a substrate made of the metal-carbon composite A.

【0032】[6]この基材の上下面に銅メッキ層Bを
被着させる。
[6] A copper plating layer B is applied to the upper and lower surfaces of the substrate.

【0033】本発明の金属炭素複合体Aは、その熱膨張
係数は銅および/または銀nが含浸されていることによ
り、8〜10ppm/℃となっている。また、銅および
/または銀nが含浸されていることにより、金属炭素複
合体Aの剛性が高くなり、光半導体パッケージをネジ取
付部2bを介して外部電気回路にネジ止めにより固定す
る場合、金属炭素複合体Aが潰れることなく強固に固定
できる。そのため、光半導体素子1の作動時に発する熱
を外部電気回路のヒートシンク部に確実に伝え得る。
The metal-carbon composite A of the present invention has a thermal expansion coefficient of 8 to 10 ppm / ° C. due to impregnation with copper and / or silver n. In addition, the impregnation with copper and / or silver n increases the rigidity of the metal-carbon composite A, and when the optical semiconductor package is fixed to an external electric circuit via the screw mounting portion 2b by screwing, the metal The carbon composite A can be firmly fixed without being crushed. Therefore, heat generated when the optical semiconductor element 1 operates can be reliably transmitted to the heat sink of the external electric circuit.

【0034】なお、銅および/または銀nは、その熱膨
張係数が17〜20ppm/℃、熱伝導率が390W/
m・K以上、弾性率が80GPa以上、融点が900℃
以上とそれらの特性が光半導体パッケージの製作上およ
び特性上から好ましいといった観点から用いられる。
The copper and / or silver n has a coefficient of thermal expansion of 17 to 20 ppm / ° C. and a thermal conductivity of 390 W /
m · K or more, elastic modulus 80 GPa or more, melting point 900 ° C
The above and their characteristics are used from the viewpoint that they are preferable from the viewpoint of manufacturing and characteristics of the optical semiconductor package.

【0035】具体的には、熱膨張係数について、銅およ
び/または銀nを炭素質母材m内に適当な含有量で分散
させれば、金属炭素複合体Aとしての熱膨張係数が光半
導体素子1と大幅に異なる程度に上昇することは無い。
また、熱伝導率は非常に高いため、光半導体素子1の作
動時に発する熱を伝えるのに有利である。また、弾性率
について、従来に比し銅および/または銀nが、ネジを
締め付けた際の緩衝材として機能するため、基体2の破
損を有効に防止する。
More specifically, when copper and / or silver n are dispersed at an appropriate content in the carbonaceous base material m, the thermal expansion coefficient of the metal-carbon composite A can be reduced by the optical semiconductor. It does not rise to a degree that is significantly different from element 1.
Further, since the thermal conductivity is very high, it is advantageous for transmitting heat generated when the optical semiconductor element 1 is operated. Further, with respect to the elastic modulus, copper and / or silver n function as a cushioning material when the screw is tightened as compared with the prior art, so that damage to the base 2 is effectively prevented.

【0036】また、融点は非常に高いため、光半導体パ
ッケージを融点が780℃程度以上の銀ロウ等のロウ材
で組み立てても溶融されることが無く、常に炭素質母材
m内を安定させておくことができる。なお、溶融される
ような金属の場合は基体2の端面から溶け出す場合があ
り、光半導体パッケージとしては不適なものである。
Further, since the melting point of the optical semiconductor package is very high, even if the optical semiconductor package is assembled with a brazing material such as a silver brazing material having a melting point of about 780 ° C. or more, it is not melted, and the inside of the carbonaceous matrix m is always stabilized. Can be kept. In the case of a metal that can be melted, it may melt out from the end face of the base 2 and is not suitable for an optical semiconductor package.

【0037】また、基体2は図2に示すように、金属炭
素複合体Aから成る基材の表面に銅メッキ層Bが被着さ
れている。この銅メッキ層Bは、基材の表面に露出して
いる一方向性炭素繊維lの気孔を完全に被覆し、光半導
体パッケージ内部の気密性を保持する機能を有するとと
もに、光半導体素子1の作動時に発する熱を横方向に伝
える所謂伝熱媒体としても機能する。更には、基体2に
接合させる光半導体素子1,シールリング3,入出力端
子4等を金(Au)−錫(Sn)ロウや銀(Ag)ロウ
等のロウ材で接合する際に、ロウ材の濡れ性を向上させ
るものとしても機能する。
As shown in FIG. 2, a copper plating layer B is applied to the surface of a substrate made of a metal-carbon composite A. The copper plating layer B completely covers the pores of the unidirectional carbon fiber 1 exposed on the surface of the base material, has a function of maintaining the airtightness inside the optical semiconductor package, and It also functions as a so-called heat transfer medium that transfers the heat generated during operation in the lateral direction. Further, when the optical semiconductor element 1, the seal ring 3, the input / output terminal 4 and the like to be joined to the base 2 are joined with a brazing material such as gold (Au) -tin (Sn) brazing or silver (Ag) brazing, It also functions as improving the wettability of the material.

【0038】また、銅メッキ層Bは、光半導体パッケー
ジ内部の気密性をヘリウム(He)を使用して検査した
際、Heの一部が一方向性炭素繊維lの気孔中にトラッ
プされるのを有効に防止し、その結果検査に対して適格
な光半導体パッケージとし得る。更に、銅メッキ層B
は、光半導体素子1が作動時に発する熱を、光半導体素
子1が接合(載置)されている接合部(載置部2a)か
ら銅メッキ層Bに沿って伝えることによって、光半導体
パッケージ内部全域から光半導体パッケージ外部全域
(ヒートシンク部と大気中)へと効率良く熱を放散させ
得る。また、光半導体素子1やシールリング3や入出力
端子4等を基体2にロウ付けする際に、ロウ材の濡れ性
を良好とすることにより、光半導体素子1が作動時に発
する熱を効率良く基体2に伝えるとともに、光半導体パ
ッケージ内部の気密性を保持する機能をも有する入出力
端子4を良好に接合させ得る。
In the copper plating layer B, when the airtightness inside the optical semiconductor package is inspected using helium (He), part of He is trapped in the pores of the unidirectional carbon fiber l. Can be effectively prevented, and as a result, an optical semiconductor package suitable for inspection can be obtained. Furthermore, copper plating layer B
In the optical semiconductor package, the heat generated during the operation of the optical semiconductor element 1 is transmitted along the copper plating layer B from the joint (mounting part 2a) where the optical semiconductor element 1 is joined (placed). Heat can be efficiently dissipated from the entire area to the entire area outside the optical semiconductor package (the heat sink portion and the air). In addition, when the optical semiconductor element 1, the seal ring 3, the input / output terminal 4, and the like are brazed to the base 2, by making the wettability of the brazing material good, the heat generated by the operation of the optical semiconductor element 1 can be efficiently removed. The input / output terminal 4, which has a function of transmitting air to the base 2 and also maintaining airtightness inside the optical semiconductor package, can be satisfactorily joined.

【0039】この銅メッキ層Bは、厚さが0.5〜5μ
mであることが良い。0.5μm未満の場合、光半導体
素子1や入出力端子4をAu−SnロウやAgロウ等の
ロウ材で接合する際、ロウ材の濡れ性が損なわれ易く、
また伝熱媒体としての機能が損なわれたり、光半導体パ
ッケージ内部の気密性検査に対して不適格なものとな
る。一方、5μmを超える場合、金属炭素複合体Aと銅
メッキ層Bとの間に発生する熱応力による歪みが大きな
ものとなり、銅メッキ層Bが剥離し易くなる。
This copper plating layer B has a thickness of 0.5 to 5 μm.
m is good. When the thickness is less than 0.5 μm, when the optical semiconductor element 1 and the input / output terminal 4 are joined with a brazing material such as Au—Sn brazing or Ag brazing, the wettability of the brazing brazing material is likely to be impaired.
In addition, the function as a heat transfer medium is impaired, and the airtightness inside the optical semiconductor package is unsuitable for inspection. On the other hand, if it exceeds 5 μm, the strain due to the thermal stress generated between the metal-carbon composite A and the copper plating layer B becomes large, and the copper plating layer B is easily peeled.

【0040】また、本発明においては、従来構成では載
置部2aを囲繞する枠体となる部位も、載置部2aを有
する部位と全く同一の材質で構成されているため、光半
導体素子1の発する熱が載置部2aの周辺部から載置部
2aを囲繞する部位に伝わっても、この部位から効率良
く外部(大気中)に放散される。即ち、光半導体素子1
が作動時に発する熱量が非常に大きい場合であっても、
載置部2aを有する部位から載置部2aを囲繞する部位
を介して大気中に伝わる経路と、載置部2aを有する部
位からヒートシンク部に伝わる経路との2経路により効
率良く放散させ得る。
Further, in the present invention, in the conventional configuration, the portion that becomes the frame surrounding the mounting portion 2a is made of exactly the same material as the portion having the mounting portion 2a. Is transmitted from the periphery of the mounting portion 2a to a portion surrounding the mounting portion 2a, the heat is efficiently radiated to the outside (in the atmosphere) from this portion. That is, the optical semiconductor element 1
Even if the amount of heat generated during operation is very large,
Efficient radiation can be achieved by two paths: a path transmitted from the portion having the mounting portion 2a to the atmosphere via the portion surrounding the mounting portion 2a, and a path transmitted from the portion having the mounting portion 2a to the heat sink.

【0041】具体的には、基体2は、光半導体素子1の
載置部2aに垂直な方向において350〜400W/m
・K程度の熱伝導率が得られ、光半導体素子1の載置部
2aの面に平行な方向においては200〜250W/m
・K程度の熱伝導率が得られる。その結果、光半導体素
子1の作動時に発する熱量が非常に大きい場合であって
も、その熱は載置部2aを有する部位から載置部2aを
囲繞する部位にランダムに効率良く伝わり、最終的に大
気中に伝わる経路と、載置部2aを有する部位からラン
ダムにヒートシンク部に伝わる経路との2経路により、
効率良く放散させ得る。
Specifically, the base 2 has a thickness of 350 to 400 W / m in a direction perpendicular to the mounting portion 2a of the optical semiconductor element 1.
A thermal conductivity of about K is obtained, and 200 to 250 W / m in a direction parallel to the surface of the mounting portion 2a of the optical semiconductor element 1
-A thermal conductivity of about K is obtained. As a result, even when the amount of heat generated during the operation of the optical semiconductor element 1 is very large, the heat is transmitted efficiently and randomly from the portion having the mounting portion 2a to the portion surrounding the mounting portion 2a. Two paths: a path transmitted to the atmosphere in the air and a path transmitted randomly from the portion having the mounting portion 2a to the heat sink portion.
It can be efficiently dissipated.

【0042】また、載置部2aを有する部位と載置部2
aを囲繞する部位とが一体的に作製されているため、従
来のように、それらの間に隙間ができて光半導体素子1
の気密性が損なわれるという懸念が全く無い。
The portion having the mounting portion 2a and the mounting portion 2
a is formed integrally with the optical semiconductor element 1 as in the related art.
There is no concern at all that the airtightness will be impaired.

【0043】また、上記のように一体的に作製されてい
るため、光半導体素子1の光入出力端面が載置部2aを
囲繞する部位の一側部(一側壁)に平行となるように載
置部2aに載置固定すると、光半導体素子1と、載置部
2aを囲繞する一側部(側壁)にほぼ垂直に伸びるよう
に固定部材6に固定される光ファイバ7との光軸の調整
が非常に容易になる。即ち、光半導体素子1の光入出力
端面と載置部2aを囲繞する部位の一側部とが常に平行
となるため、光半導体素子1と光ファイバ7との光の結
合効率を常に良好とし得る。
Also, since the optical input / output end face of the optical semiconductor element 1 is formed integrally as described above, the optical input / output end face is parallel to one side (one side wall) of the portion surrounding the mounting portion 2a. The optical axis of the optical semiconductor element 1 and the optical fiber 7 fixed to the fixing member 6 so as to extend substantially perpendicularly to one side (side wall) surrounding the mounting portion 2a when the mounting is fixed to the mounting portion 2a. Adjustment becomes very easy. That is, since the light input / output end face of the optical semiconductor element 1 and one side of the portion surrounding the mounting section 2a are always parallel, the light coupling efficiency between the optical semiconductor element 1 and the optical fiber 7 is always improved. obtain.

【0044】さらに、上記本発明の構成では、光半導体
素子1の電極は入出力端子4のメタライズ層4aに対し
て、常に接続されるべき所定位置にあるため、それらを
電気的に接続するボンディングワイヤの長さを極端に長
くしなければならない部位を発生させることがなくな
る。従って、ワイヤボンディングの長さをいずれの部位
においても常に一定とできるため、インピーダンスが常
に一定となる光半導体素子1となる。そのため、光半導
体素子1と入出力端子4との高周波信号の伝送特性が常
に良好となる。
Further, in the configuration of the present invention, since the electrodes of the optical semiconductor element 1 are at predetermined positions to be always connected to the metallized layer 4a of the input / output terminal 4, bonding for electrically connecting them is performed. There is no need to create a site where the length of the wire must be extremely long. Therefore, since the length of the wire bonding can be always constant at any part, the optical semiconductor device 1 having the constant impedance is obtained. Therefore, the transmission characteristics of the high-frequency signal between the optical semiconductor element 1 and the input / output terminal 4 are always improved.

【0045】このような基体2の一側部(載置部2aを
囲繞する部位の一側部)には、光信号の経路と成る貫通
孔2cが形成されるとともに、他の側部(載置部2aを
囲繞する部位の他の側部)には、外部電気回路と高周波
信号の入出力を行う機能を有する入出力端子4を嵌着す
るための貫通開口または切欠き部から成る入出力端子取
付部2dが形成される。
On one side of the base 2 (one side surrounding the mounting portion 2a), there is formed a through hole 2c serving as a path for an optical signal, and the other side (mounting). On the other side of the portion surrounding the mounting portion 2a), an input / output formed of a through opening or a cutout for fitting an input / output terminal 4 having a function of inputting / outputting a high-frequency signal to / from an external electric circuit. A terminal mounting portion 2d is formed.

【0046】貫通孔2cの内周面または基体2の外面側
開口の周辺部には、光ファイバ7を挿通し樹脂接着剤等
で接着されたホルダー8を固定するための固定部材6
が、銀ロウ等のロウ材で接合される。この固定部材6
は、Fe−Ni−Co合金やFe−Ni合金等の金属材
料から成り、例えばFe−Ni−Co合金から成る場
合、この合金のインゴットに圧延加工やプレス加工等の
金属加工を施すことにより所定の形状に作製される。ま
た、その表面には酸化腐食を有効に防止するために、
0.5〜9μmのNi層や0.5〜5μmのAu層等の金
属層をメッキ法により被着させておくと良い。
A fixing member 6 for inserting an optical fiber 7 and fixing a holder 8 bonded with a resin adhesive or the like to the inner peripheral surface of the through hole 2c or the peripheral portion of the opening on the outer surface side of the base 2.
Are joined with a brazing material such as a silver brazing material. This fixing member 6
Is made of a metal material such as an Fe-Ni-Co alloy or an Fe-Ni alloy. For example, in the case of an Fe-Ni-Co alloy, a predetermined process is performed by subjecting an ingot of this alloy to metal working such as rolling or pressing. It is manufactured in the shape of In order to effectively prevent oxidative corrosion on the surface,
A metal layer such as a 0.5 to 9 μm Ni layer or a 0.5 to 5 μm Au layer is preferably applied by plating.

【0047】なお、固定部材6の内周面には、集光レン
ズとして機能するとともに光半導体パッケージの内部を
塞ぐ非晶質ガラス等から成る透光性部材9が、その接合
部の表面に形成されたメタライズ層を介して、200〜
400℃の融点を有するAu−Sn合金等の低融点ロウ
材で接合される。
A translucent member 9 made of amorphous glass or the like which functions as a condenser lens and closes the inside of the optical semiconductor package is formed on the inner peripheral surface of the fixing member 6 on the surface of the joint. 200- through the metallized layer
It is joined with a low melting point brazing material such as an Au-Sn alloy having a melting point of 400 ° C.

【0048】透光性部材9は、熱膨張係数が4〜12p
pm/℃(室温〜400℃)のサファイア(単結晶アル
ミナ)や非晶質ガラス等から成り、球状,半球状,凸レ
ンズ状,ロッドレンズ状等の形状とされる。そして、光
ファイバ7を伝わってきた外部のレーザ光等の光を光半
導体素子1に入力させる、または光半導体素子1で出力
したレーザ光等の光を光ファイバ7に入力させるための
集光用部材として用いられる。透光性部材9が、例えば
結晶軸の存在しない非晶質ガラスの場合、酸化珪素(S
iO2),酸化鉛(PbO)を主成分とする鉛系、また
はホウ酸やケイ砂を主成分とするホウケイ酸系のものを
用いる。
The translucent member 9 has a coefficient of thermal expansion of 4 to 12 p.
It is made of sapphire (single crystal alumina) or amorphous glass at pm / ° C. (room temperature to 400 ° C.), and has a spherical, hemispherical, convex lens, rod lens, or other shape. Then, a light such as an external laser beam transmitted through the optical fiber 7 is input to the optical semiconductor element 1, or a condensing light for inputting the laser light or the like output from the optical semiconductor element 1 to the optical fiber 7. Used as a member. When the translucent member 9 is, for example, amorphous glass having no crystal axis, silicon oxide (S
iO 2 ), a lead-based material mainly containing lead oxide (PbO), or a borosilicate-based material mainly containing boric acid or silica sand is used.

【0049】また、透光性部材9は、その熱膨張係数が
基体2のそれと異なっていても、固定部材6が熱膨張差
による応力を吸収し緩和するので、結晶軸が応力のため
にある方向に揃うことにより光の屈折率の変化を起こす
ようなことは発生しにくい。従って、このような透光性
部材9を用いることにより、光半導体素子1と光ファイ
バ7との間の光の結合効率を高くできる。
Even if the translucent member 9 has a different coefficient of thermal expansion from that of the base 2, the fixing member 6 absorbs and relaxes the stress due to the difference in thermal expansion, so that the crystal axis is due to the stress. It is unlikely that a change in the refractive index of light due to the alignment in the direction will occur. Therefore, by using such a translucent member 9, the light coupling efficiency between the optical semiconductor element 1 and the optical fiber 7 can be increased.

【0050】また、ホルダー8は、固定部材6にYAG
レーザ溶接等で接合されるため、固定部材6と同様に金
属材料から成る方が良い。更には、ホルダー8の熱膨張
係数は、光半導体素子1と光ファイバ7との光軸がずれ
ることが無いように、固定部材6と同様の材質であるこ
とが良い。従って、ホルダー8の材料は、固定部材6が
Fe−Ni−Co合金であればFe−Ni−Co合金が
良く、一方固定部材6がFe−Ni合金であればFe−
Ni合金であることが良い。
The holder 8 is provided with a YAG
Since it is joined by laser welding or the like, it is better to be made of a metal material like the fixing member 6. Further, the thermal expansion coefficient of the holder 8 is preferably made of the same material as that of the fixing member 6 so that the optical axis of the optical semiconductor element 1 and the optical fiber 7 do not shift. Accordingly, the material of the holder 8 is preferably an Fe—Ni—Co alloy when the fixing member 6 is an Fe—Ni—Co alloy, while an Fe—Ni—Co alloy is preferable when the fixing member 6 is an Fe—Ni alloy.
A Ni alloy is preferred.

【0051】また、入出力端子取付部2dには、その内
周面に入出力端子4が銅メッキ層Bを介してAgロウ等
のロウ材で嵌着されている。この入出力端子4は、絶縁
性のセラミック基板に導電性のメタライズ層4aが被着
されたものであり、光半導体パッケージ内部の気密性を
保持する機能を有するとともに、光半導体パッケージと
外部電気回路との高周波信号の入出力を行う機能を有す
る。なお、セラミック基板の材料は、誘電率や熱膨張係
数等の特性に応じて、アルミナ(Al23)セラミック
スや窒化アルミニウム(AlN)セラミックス等のセラ
ミックス材料が適宜選定される。
The input / output terminal mounting portion 2d has an input / output terminal 4 fitted on the inner peripheral surface thereof with a brazing material such as Ag brazing via a copper plating layer B. The input / output terminal 4 is formed by attaching a conductive metallized layer 4a to an insulating ceramic substrate, has a function of maintaining the airtightness inside the optical semiconductor package, and has a function of maintaining the optical semiconductor package and an external electric circuit. And a function of inputting and outputting a high-frequency signal to and from the device. In addition, as the material of the ceramic substrate, a ceramic material such as alumina (Al 2 O 3 ) ceramic or aluminum nitride (AlN) ceramic is appropriately selected according to characteristics such as a dielectric constant and a thermal expansion coefficient.

【0052】入出力端子4は、メタライズ層4aとなる
タングステン(W),モリブデン(Mo),マンガン
(Mn)等の粉末に有機溶剤,溶媒を添加混合して得た
金属ペーストを、セラミック基板となる原料粉末に適当
な有機バインダや溶剤等を添加混合しペースト状と成す
とともに、このペーストをドクターブレード法やカレン
ダーロール法によって成されたセラミックグリーンシー
トに、予め従来周知のスクリーン印刷法により所望の形
状に印刷塗布し、約1600℃の高温で焼結することに
より作製される。
The input / output terminal 4 is formed by adding a metal paste obtained by adding an organic solvent and a solvent to a powder of tungsten (W), molybdenum (Mo), manganese (Mn) or the like to be a metallized layer 4a. A suitable organic binder, a solvent, etc. are added to and mixed with the raw material powder to form a paste, and the paste is formed into a ceramic green sheet formed by a doctor blade method or a calender roll method in advance by a conventionally well-known screen printing method. It is produced by printing and applying to a shape and sintering at a high temperature of about 1600 ° C.

【0053】また、メタライズ層4a上面には、入出力
端子4との接合を強固なものとするために、熱膨張係数
が入出力端子4のセラミック基板に近似した部材から成
るリード端子(図示せず)が銀ロウ等のロウ材で接合さ
れる。例えば入出力端子4のセラミック基板がAl23
セラミックスから成る場合は、リード端子はFe−Ni
−Co合金やFe−Ni合金から成る。
On the upper surface of the metallized layer 4a, lead terminals (shown in the drawing) made of a member having a coefficient of thermal expansion close to that of the ceramic substrate of the input / output terminals 4 are formed in order to strengthen the bonding with the input / output terminals 4. ) Are joined with a brazing material such as silver brazing. For example, the ceramic substrate of the input / output terminal 4 is made of Al 2 O 3
When made of ceramics, the lead terminals are Fe-Ni
-Co alloy or Fe-Ni alloy.

【0054】このような入出力端子4,固定部材6が接
合された基体2の上面には、蓋体5をシーム溶接やAu
−Snロウで接合するための接合媒体として機能する、
Fe−Ni−Co合金,Fe−Ni合金等の金属から成
るシールリング3が、Agロウ等のロウ材で接合されて
いる。シールリング3は、例えばFe−Ni−Co合金
から成る場合、この合金のインゴットに圧延加工やプレ
ス加工等の金属加工を施すことにより所定の形状に製作
される。また、その表面には酸化腐食を有効に防止する
ために、0.5〜9μmのNi層や0.5〜5μmのA
u層等の金属層をメッキ法により被着させておくと良
い。
On the upper surface of the base 2 to which the input / output terminal 4 and the fixing member 6 are joined, the lid 5 is seam-welded or Au-coated.
-Function as a joining medium for joining with Sn solder;
A seal ring 3 made of a metal such as an Fe-Ni-Co alloy or an Fe-Ni alloy is joined with a brazing material such as Ag brazing. When the seal ring 3 is made of, for example, an Fe-Ni-Co alloy, the seal ring 3 is manufactured into a predetermined shape by subjecting an ingot of this alloy to metal working such as rolling or pressing. In order to effectively prevent oxidative corrosion, a 0.5-9 μm Ni layer or a 0.5-5 μm A
It is preferable that a metal layer such as a u layer is applied by a plating method.

【0055】また、シールリング3の上面には、Fe−
Ni−Co合金,Fe−Ni合金等から成る金属製の蓋
体5、またはAl23セラミックス,AlNセラミック
ス等から成るセラミックス製の蓋体5が接合され、この
蓋体5により光半導体素子1を光半導体パッケージ内部
に気密に封止する。
Further, on the upper surface of the seal ring 3, Fe-
Ni-Co alloy, Fe-Ni metal lid body 5 made of an alloy or the like or Al 2 O 3 ceramics, and ceramic lid 5 made of AlN ceramics is bonded, the optical semiconductor element 1 by the lid 5 Is hermetically sealed inside the optical semiconductor package.

【0056】このように、本発明の光半導体パッケージ
は、略直方体状とされ、上面の凹部の底面に光半導体素
子1の載置部2aおよび一側部から凹部にかけて形成さ
れた貫通孔2cから成る光ファイバ固定部材取付部なら
びに他の側部から凹部にかけて形成された貫通開口また
は切欠き部から成る入出力端子取付部2dを有し、対向
する側部外面の下端に外側に突出して形成された張出部
に貫通穴または切欠きから成るネジ取付部2bが設けら
れた基体2と、光ファイバ固定部材取付部に嵌着された
筒状の光ファイバ固定部材6と、入出力端子取付部2d
に嵌着された入出力端子4とを具備し、基体2は、銅お
よび/または銀nが含浸された炭素質母材m内に一方向
性炭素繊維lの集合体が分散された金属炭素複合体Aか
ら成る基材の表面に、銅メッキ層Bが被着されて成る。
As described above, the optical semiconductor package of the present invention has a substantially rectangular parallelepiped shape, and is formed on the mounting portion 2a of the optical semiconductor element 1 and the through hole 2c formed from one side to the concave portion on the bottom surface of the concave portion on the upper surface. An optical fiber fixing member mounting portion and an input / output terminal mounting portion 2d formed of a through opening or a cut-out portion formed from the other side portion to the concave portion, and are formed to protrude outward at the lower end of the opposed side outer surface. A base 2 provided with a screw mounting portion 2b formed of a through hole or a notch in the extended portion, a cylindrical optical fiber fixing member 6 fitted to the optical fiber fixing member mounting portion, and an input / output terminal mounting portion 2d
And an input / output terminal 4 fitted in the base material 2. The base 2 is made of a metal carbon in which an aggregate of unidirectional carbon fibers 1 is dispersed in a carbonaceous matrix m impregnated with copper and / or silver n. A copper plating layer B is adhered to the surface of a substrate made of the composite A.

【0057】また、上記本発明の光半導体パッケージ
と、載置部2aに載置固定され入出力端子4に電気的に
接続された光半導体素子1と、基体2の上面に接合され
た蓋体5とを具備することにより、製品としての光半導
体装置となる。なお、固定部材6に端部が挿着される光
ファイバ7は、一般に光半導体装置の使用時に設けられ
るが、単品としての光半導体装置に付加されていてもよ
く、または光半導体装置が外部電気回路基板等に固定さ
れて使用される際に取り付けるようにしてもよい。
The optical semiconductor package of the present invention, the optical semiconductor element 1 mounted and fixed on the mounting portion 2a and electrically connected to the input / output terminal 4, and the lid joined to the upper surface of the base 2 By providing 5, the optical semiconductor device as a product is obtained. The optical fiber 7 whose end is inserted into the fixing member 6 is generally provided when the optical semiconductor device is used. However, the optical fiber 7 may be added to the optical semiconductor device as a single item, or the optical semiconductor device may be connected to an external electrical device. It may be attached when it is used by being fixed to a circuit board or the like.

【0058】具体的には、光半導体素子1が載置される
載置部2aの上面に光半導体素子1をガラス,樹脂,ロ
ウ材等の接着剤を介して接着固定するとともに、光半導
体素子1の電極をボンディングワイヤを介して所定のメ
タライズ層4aに電気的に接続させ、しかる後、シール
リング3上面に蓋体5をガラス,樹脂,ロウ材,シーム
溶接等により接合させることにより、基体2,シールリ
ング3,入出力端子4,固定部材6,透光性部材9から
成る光半導体パッケージの内部に光半導体素子1を収容
した製品としての光半導体装置となる。
Specifically, the optical semiconductor element 1 is bonded and fixed to the upper surface of the mounting portion 2a on which the optical semiconductor element 1 is mounted via an adhesive such as glass, resin, brazing material or the like. The first electrode is electrically connected to a predetermined metallized layer 4a via a bonding wire, and then the lid 5 is joined to the upper surface of the seal ring 3 by glass, resin, brazing material, seam welding, or the like, so that the base 2, an optical semiconductor device as a product in which the optical semiconductor element 1 is housed in an optical semiconductor package including the seal ring 3, the input / output terminal 4, the fixing member 6, and the translucent member 9.

【0059】このような光半導体装置は、例えば外部電
気回路から供給される高周波信号により光半導体素子1
を光励起させ、励起したレーザ光等の光を透光性部材9
を通して光ファイバ7に授受させるとともに光ファイバ
7内を伝送させることにより、大容量の情報を高速に伝
送できる光電変換装置として機能し、光通信分野等に多
く用いることができる。
Such an optical semiconductor device can be used, for example, by using a high-frequency signal supplied from an external electric circuit.
Is light-excited, and the excited light such as laser light
Is transmitted and received through the optical fiber 7 and transmitted through the optical fiber 7, thereby functioning as a photoelectric conversion device capable of transmitting a large amount of information at a high speed, and can be widely used in the field of optical communication and the like.

【0060】なお、本発明は上記実施の形態に限定され
ず、本発明の要旨を逸脱しない範囲内において種々の変
更を行うことは何等支障ない。例えば、光半導体装置
は、内部または外部に、例えば固定部材6の基体2内側
または外側に、あるいは基体2外側の光ファイバ7の途
中に、戻り光防止用の光アイソレータを設けても良い。
この場合、光半導体素子1と光ファイバ7との光の結合
効率がさらに良好なものとなる。
The present invention is not limited to the above-described embodiment, and various changes may be made without departing from the scope of the present invention. For example, the optical semiconductor device may be provided with an optical isolator for preventing return light inside or outside, for example, inside or outside the base 2 of the fixing member 6 or in the middle of the optical fiber 7 outside the base 2.
In this case, the light coupling efficiency between the optical semiconductor element 1 and the optical fiber 7 is further improved.

【0061】[0061]

【発明の効果】本発明は、略直方体状とされ、上面に形
成された凹部の底面に光半導体素子を載置するための載
置部および一側部から凹部にかけて形成された貫通孔か
ら成る光ファイバ固定部材取付部ならびに他の側部から
凹部にかけて形成された貫通開口または切欠き部から成
る入出力端子取付部を有するとともに、対向する側部外
面の下端に外側に突出するように形成された張出部に貫
通穴または切欠きから成るネジ取付部が設けられた基体
と、光ファイバ固定部材取付部に嵌着された筒状の光フ
ァイバ固定部材と、入出力端子取付部に嵌着された入出
力端子とを具備し、基体は、銅および/または銀が含浸
された炭素質母材内に一方向性炭素繊維の集合体が分散
された金属炭素複合体から成る基材の表面に、銅メッキ
層が被着されて成ることから、光半導体素子の気密性、
光半導体素子と光ファイバとの光の結合効率、光半導体
素子と入出力端子との高周波伝送特性、および光半導体
素子の作動時の熱放散性を非常に良好とし得るという作
用効果を有する。その結果、光半導体素子を長期間にわ
たり正常かつ安定に作動させ得る。
The present invention has a substantially rectangular parallelepiped shape and comprises a mounting portion for mounting an optical semiconductor element on the bottom surface of a concave portion formed on the upper surface and a through hole formed from one side to the concave portion. It has an input / output terminal mounting portion comprising an optical fiber fixing member mounting portion and a through opening or notch formed from the other side to the concave portion, and is formed so as to protrude outward at the lower end of the opposing side outer surface. A base provided with a screw mounting portion formed of a through hole or a notch in the extended portion, a cylindrical optical fiber fixing member fitted to the optical fiber fixing member mounting portion, and a fitting to the input / output terminal mounting portion. The input / output terminal is provided with a base, and the base is formed of a metal-carbon composite in which an aggregate of unidirectional carbon fibers is dispersed in a carbonaceous base material impregnated with copper and / or silver. To the copper plating layer Since, airtightness of the optical semiconductor element,
It has the effect that the coupling efficiency of light between the optical semiconductor element and the optical fiber, the high-frequency transmission characteristics between the optical semiconductor element and the input / output terminal, and the heat dissipation during operation of the optical semiconductor element can be made very good. As a result, the optical semiconductor element can be normally and stably operated for a long time.

【0062】また、本発明の光半導体装置は、本発明の
光半導体パッケージと、載置部に載置固定され入出力端
子に電気的に接続された光半導体素子と、基体の上面に
接合された蓋体とを具備したことにより、上記作用効果
を有する光半導体パッケージを用いた信頼性の高い光半
導体装置を提供できる。
Further, an optical semiconductor device of the present invention includes an optical semiconductor package of the present invention, an optical semiconductor element mounted and fixed on a mounting portion and electrically connected to input / output terminals, and joined to an upper surface of a base. With such a lid, it is possible to provide a highly reliable optical semiconductor device using the optical semiconductor package having the above-described functions and effects.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の光半導体パッケージについて実施の形
態の一例を示す断面図である。
FIG. 1 is a sectional view showing an example of an embodiment of an optical semiconductor package of the present invention.

【図2】図1の光半導体パッケージにおける基体の部分
拡大断面図である。
FIG. 2 is a partially enlarged sectional view of a base in the optical semiconductor package of FIG. 1;

【図3】従来の光半導体パッケージの平面図である。FIG. 3 is a plan view of a conventional optical semiconductor package.

【図4】図3の光半導体パッケージの断面図である。FIG. 4 is a sectional view of the optical semiconductor package of FIG. 3;

【図5】図3の光半導体パッケージにおける基体の部分
拡大断面図である。
FIG. 5 is a partially enlarged sectional view of a base in the optical semiconductor package of FIG. 3;

【符号の説明】[Explanation of symbols]

1:光半導体素子 2:基体 2a:載置部 2b:ネジ取付部 2c:貫通孔 2d:入出力端子取付部 4:入出力端子 5:蓋体 6:光ファイバ固定部材 7:光ファイバ l:一方向性炭素繊維 m:炭素質母材 n:銅および/または銀 A:金属炭素複合体 B:銅メッキ層 1: optical semiconductor element 2: base 2a: mounting portion 2b: screw mounting portion 2c: through hole 2d: input / output terminal mounting portion 4: input / output terminal 5: lid 6: optical fiber fixing member 7: optical fiber l: Unidirectional carbon fiber m: carbonaceous matrix n: copper and / or silver A: metal-carbon composite B: copper plating layer

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 略直方体状とされ、上面に形成された凹
部の底面に光半導体素子を載置するための載置部および
一側部から前記凹部にかけて形成された貫通孔から成る
光ファイバ固定部材取付部ならびに他の側部から前記凹
部にかけて形成された貫通開口または切欠き部から成る
入出力端子取付部を有するとともに、対向する前記側部
外面の下端に外側に突出するように形成された張出部に
貫通穴または切欠きから成るネジ取付部が設けられた基
体と、前記光ファイバ固定部材取付部に嵌着された筒状
の光ファイバ固定部材と、前記入出力端子取付部に嵌着
された入出力端子とを具備した光半導体素子収納用パッ
ケージにおいて、前記基体は、銅および/または銀が含
浸された炭素質母材内に一方向性炭素繊維の集合体が分
散された金属炭素複合体から成る基材の表面に、銅メッ
キ層が被着されて成ることを特徴とする光半導体素子収
納用パッケージ。
1. An optical fiber fixing device having a substantially rectangular parallelepiped shape and comprising a mounting portion for mounting an optical semiconductor element on a bottom surface of a concave portion formed on an upper surface and a through hole formed from one side to the concave portion. It has an input / output terminal mounting portion comprising a member mounting portion and a through-opening or notch formed from the other side portion to the concave portion, and is formed so as to protrude outward at a lower end of the opposed side outer surface. A base provided with a screw attachment portion formed of a through hole or a notch in the overhang portion, a cylindrical optical fiber fixing member fitted to the optical fiber fixing member attaching portion, and a fitting to the input / output terminal attaching portion; In the package for housing an optical semiconductor element having input / output terminals attached thereto, the base is made of a metal in which an aggregate of unidirectional carbon fibers is dispersed in a carbonaceous matrix impregnated with copper and / or silver. Carbon compound A package for containing an optical semiconductor element, wherein a copper plating layer is applied to a surface of a base material made of a united product.
【請求項2】 請求項1記載の光半導体素子収納用パッ
ケージと、前記載置部に載置固定され前記入出力端子に
電気的に接続された光半導体素子と、前記基体の上面に
接合された蓋体とを具備したことを特徴とする光半導体
装置。
2. An optical semiconductor element storage package according to claim 1, wherein the optical semiconductor element is mounted on and fixed to the mounting portion and electrically connected to the input / output terminal, and is bonded to an upper surface of the base. An optical semiconductor device, comprising: a lid;
JP2001053282A 2001-02-28 2001-02-28 Package for storing optical semiconductor element and optical semiconductor device Pending JP2002261374A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001053282A JP2002261374A (en) 2001-02-28 2001-02-28 Package for storing optical semiconductor element and optical semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001053282A JP2002261374A (en) 2001-02-28 2001-02-28 Package for storing optical semiconductor element and optical semiconductor device

Publications (1)

Publication Number Publication Date
JP2002261374A true JP2002261374A (en) 2002-09-13

Family

ID=18913766

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001053282A Pending JP2002261374A (en) 2001-02-28 2001-02-28 Package for storing optical semiconductor element and optical semiconductor device

Country Status (1)

Country Link
JP (1) JP2002261374A (en)

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