JP2002260865A - Organic electroluminescence element - Google Patents
Organic electroluminescence elementInfo
- Publication number
- JP2002260865A JP2002260865A JP2001053970A JP2001053970A JP2002260865A JP 2002260865 A JP2002260865 A JP 2002260865A JP 2001053970 A JP2001053970 A JP 2001053970A JP 2001053970 A JP2001053970 A JP 2001053970A JP 2002260865 A JP2002260865 A JP 2002260865A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- organic
- substrate
- transport layer
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005401 electroluminescence Methods 0.000 title claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 230000005525 hole transport Effects 0.000 claims abstract description 14
- 239000010410 layer Substances 0.000 claims description 93
- 239000011241 protective layer Substances 0.000 claims description 14
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 claims description 10
- 230000000903 blocking effect Effects 0.000 claims description 9
- OMZSGWSJDCOLKM-UHFFFAOYSA-N copper(II) sulfide Chemical compound [S-2].[Cu+2] OMZSGWSJDCOLKM-UHFFFAOYSA-N 0.000 claims description 3
- 238000004020 luminiscence type Methods 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 16
- 230000000052 comparative effect Effects 0.000 description 11
- 239000000463 material Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 239000011159 matrix material Substances 0.000 description 5
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000001659 ion-beam spectroscopy Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical group C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- RINNIXRPLZSNJJ-UHFFFAOYSA-N 5-[3-tert-butyl-4-phenyl-5-(4-phenylphenyl)phenyl]-1h-1,2,4-triazole Chemical compound C=1C=CC=CC=1C=1C(C(C)(C)C)=CC(C2=NNC=N2)=CC=1C(C=C1)=CC=C1C1=CC=CC=C1 RINNIXRPLZSNJJ-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- XVHDSGXUSNYRKF-UHFFFAOYSA-M [AlH2]OC1=CC=C(C=C1)C1=CC=CC=C1 Chemical compound [AlH2]OC1=CC=C(C=C1)C1=CC=CC=C1 XVHDSGXUSNYRKF-UHFFFAOYSA-M 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 description 1
- -1 aryl diamine compound Chemical class 0.000 description 1
- HFACYLZERDEVSX-UHFFFAOYSA-N benzidine Chemical class C1=CC(N)=CC=C1C1=CC=C(N)C=C1 HFACYLZERDEVSX-UHFFFAOYSA-N 0.000 description 1
- UFVXQDWNSAGPHN-UHFFFAOYSA-K bis[(2-methylquinolin-8-yl)oxy]-(4-phenylphenoxy)alumane Chemical compound [Al+3].C1=CC=C([O-])C2=NC(C)=CC=C21.C1=CC=C([O-])C2=NC(C)=CC=C21.C1=CC([O-])=CC=C1C1=CC=CC=C1 UFVXQDWNSAGPHN-UHFFFAOYSA-K 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000004696 coordination complex Chemical class 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229920001109 fluorescent polymer Polymers 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 150000007857 hydrazones Chemical class 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- WMHSAFDEIXKKMV-UHFFFAOYSA-N oxoantimony;oxotin Chemical compound [Sn]=O.[Sb]=O WMHSAFDEIXKKMV-UHFFFAOYSA-N 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 150000003216 pyrazines Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 150000004961 triphenylmethanes Chemical class 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、有機エレクトロル
ミネセンス素子に係り、特に発光光を不透明な基板の有
機エレクトロルミネセンス膜の形成側より取り出す方式
の有機エレクトロルミネセンス素子に好適な有機エレク
トロルミネセンス膜構造を有する有機エレクトロルミネ
センス素子に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic electroluminescence device, and more particularly to an organic electroluminescence device suitable for an organic electroluminescence device of a type in which emitted light is extracted from the side of an opaque substrate on which an organic electroluminescence film is formed. The present invention relates to an organic electroluminescent device having a sense film structure.
【０００２】[0002]
【従来の技術】有機エレクトロルミネセンス素子（以
下、単に有機ＥＬ素子ともいう）については、強い蛍光
を発すアントラセン等の単結晶において、キャリア注入
によりエレクトロルミネセンス（以下、単にＥＬともい
う）発光する現象の発見より研究が始まった。2. Description of the Related Art An organic electroluminescence device (hereinafter, also simply referred to as an organic EL device) emits electroluminescence (hereinafter, also simply referred to as EL) by carrier injection in a single crystal such as anthracene which emits strong fluorescence. Research began with the discovery of the phenomenon.
【０００３】有機ＥＬ素子は、コントラストが高い、高
速応答、視野角依存性のない、などの特徴を有した表示
素子として、携帯端末機器やパーソナルコンピューター
のディスプレイ等に応用することが検討されており、車
載オーディオ用表示パネルにはモノカラーを部分的に組
み合わせたエリアカラーの表示素子として実用化されて
いる。[0003] As a display element having characteristics such as high contrast, high-speed response, and no dependence on the viewing angle, it has been studied to apply the organic EL element to a display of a portable terminal device or a personal computer. On the other hand, an in-vehicle audio display panel has been put to practical use as an area color display element in which a mono color is partially combined.
【０００４】有機ＥＬ素子の赤（Ｒ）、緑（Ｇ）、青
（Ｂ）に対応した表示素子を組み合わせれば、フルカラ
ー表示も可能であることから、低電圧駆動で高輝度発光
する高性能の有機ＥＬ素子についての検討が種々なされ
ている。When a display element corresponding to red (R), green (G), and blue (B) of the organic EL element is combined, a full-color display is possible, and therefore, a high performance which emits a high luminance light at a low voltage drive. Various studies have been made on the organic EL device.
【０００５】図１は、有機ＥＬ素子の基本構成を示す概
略断面図である。有機ＥＬ素子１０は、透明基板１上に
順次、陽極２、有機エレクトロルミネセンス層（以下、
単に有機ＥＬ層ともいう）８、陰極５を積層したものよ
り構成される。ガラスなどの透明基板１上に形成される
陽極２は、大きい仕事関数を有するインジウム−スズ酸
化物（以下、単にＩＴＯともいう）等より構成される透
明電極である。FIG. 1 is a schematic sectional view showing the basic structure of an organic EL device. The organic EL element 10 includes an anode 2 and an organic electroluminescent layer (hereinafter, referred to as an
8) and the cathode 5 are stacked. The anode 2 formed on a transparent substrate 1 made of glass or the like is a transparent electrode made of indium-tin oxide (hereinafter, also simply referred to as ITO) having a large work function.
【０００６】有機ＥＬ層８は、例えば、ホール輸送層３
及び発光層４から構成されるが、単一の層からなる単層
型や、電荷注入性、電荷輸送性、発光性の機能に応じた
層からなる積層型など、いろいろの構成がある。ホール
輸送層３としては、例えばアリールジアミン化合物が用
いられる。The organic EL layer 8 includes, for example, the hole transport layer 3
And a light-emitting layer 4. There are various configurations such as a single-layer type including a single layer and a laminated type including layers according to the functions of charge injection, charge transport, and light emission. As the hole transport layer 3, for example, an aryl diamine compound is used.
【０００７】発光層４としては、蛍光性を有する高分子
材料から低分子材料、金属錯体まで幅広く使用され、そ
の形成法としては、材料により溶液からの塗布等の湿式
法か真空蒸着などの乾式法が選択される。ここで、電子
輸送性の発光層４の例として、トリス（８−キノリノー
ル）アルミニウム有機金属錯体（以下、単にＡｌｑ３と
もいう）がある。The light-emitting layer 4 is widely used from a fluorescent polymer material to a low-molecular material and a metal complex. The light-emitting layer 4 can be formed by a wet method such as coating from a solution or a dry method such as vacuum evaporation depending on the material. The law is selected. Here, as an example of the electron-transporting light-emitting layer 4, there is a tris (8-quinolinol) aluminum organometallic complex (hereinafter, also simply referred to as Alq3).
【０００８】陰極５としては、小さい仕事関数を有す
る、例えばアルミニウム（Ａｌ）膜が形成される。陽極
２と陰極５の間に電源６より電圧を印加すると、ＩＴＯ
膜の陽極２よりホールが注入されて、電子輸送性の発光
層４に注入され、電子は、アルミニウム膜の陰極５より
注入される。電子とホールは発光層４の海面近傍で再結
合し発光する。As the cathode 5, for example, an aluminum (Al) film having a small work function is formed. When a voltage is applied between the anode 2 and the cathode 5 from the power supply 6, the ITO
Holes are injected from the anode 2 of the film, injected into the electron-transporting light-emitting layer 4, and electrons are injected from the aluminum film cathode 5. The electrons and holes recombine near the sea surface of the light emitting layer 4 and emit light.
【０００９】この発光層４から発せられた光は、透明な
陽極２及び透明基板１を通して、外部に取り出される。
このときの発光色は、発光層４の発光色に依存し、単色
発光であり、Ａｌｑ３の場合には、緑色発光である。Light emitted from the light emitting layer 4 is extracted to the outside through the transparent anode 2 and the transparent substrate 1.
The luminescent color at this time depends on the luminescent color of the luminescent layer 4 and is monochromatic luminescence. In the case of Alq3, it is green luminescence.
【００１０】[0010]
【発明が解決しようとする課題】このような有機ＥＬ素
子を用いて、画像表示を行う方法として、パッシブ（単
純）マトリクス方式（例えば、特開平２−３７３８５号
公報に開示）と、アクティブマトリクス方式（例えば、
特開平５−１０７５６１号公報に開示）が考えられてい
る。As a method of displaying an image using such an organic EL element, a passive (simple) matrix system (for example, disclosed in Japanese Patent Application Laid-Open No. 2-37385) and an active matrix system are disclosed. (For example,
Japanese Patent Application Laid-Open No. 5-107561) has been considered.
【００１１】パッシブマトリクス方式では、表示エリア
の陽極は例えば水平方向に互いに平行に伸びる複数のＩ
ＴＯ膜のストライプラインよりなり、陰極は例えば垂直
方向に互いに平行に伸びるアルミニウム膜のストライプ
ラインよりなり、各ストライイプラインの交差点が１画
素に対応し、各ストライプラインに接続する外付けの駆
動用のドライバＩＣにより動作させるものであり、現在
実用化されているものである。しかし、この方式の場
合、原理的に線順次駆動となるので、走査線数が増える
に従い、必要な発光の輝度も比例して増すことになり、
消費電力の増加、電流増加による素子劣化、などの問題
があり、高精細の画像表示には不適である。In the passive matrix system, the anode in the display area is provided with a plurality of I.sub.
The cathode is made of, for example, a stripe line of an aluminum film extending in parallel with each other in the vertical direction. The intersection of each stripe line corresponds to one pixel, and an external drive line connected to each stripe line is provided. It is operated by a driver IC and is currently in practical use. However, in the case of this method, since the line-sequential driving is performed in principle, as the number of scanning lines increases, the luminance of necessary light emission also increases in proportion,
There are problems such as an increase in power consumption and element deterioration due to an increase in current, and the like, which is not suitable for high-definition image display.
【００１２】これに対して、アクティブマトリクス方式
では、表示エリアの各画素に対応して基板上にスイッチ
ング用素子（薄膜トランジスタ）と駆動用素子を配置し
た構造を有し、各画素をフレーム時間中点灯できるた
め、必要輝度は実用輝度と同等でよい。しかし、発光光
は基板の有機ＥＬ素子の形成された側の反対側（すなわ
ち基板側）に取出す方式であるので、より多くの発光光
を取出すためには、スイッチング用素子と駆動用素子の
大きさをできるだけ小さくして光の開口率を上げること
が必要となるが、各素子の高集積化にも限界があるの
で、有機ＥＬ素子の形成された側の反対側の基板から発
光光をとり出す方式では、十分な輝度を得るのが困難で
ある。On the other hand, the active matrix system has a structure in which a switching element (thin film transistor) and a driving element are arranged on a substrate corresponding to each pixel in a display area, and each pixel is turned on during a frame time. Therefore, the required luminance may be equal to the practical luminance. However, since the emitted light is extracted to the opposite side of the substrate on which the organic EL element is formed (that is, the substrate side), in order to extract more emitted light, the size of the switching element and the driving element must be increased. It is necessary to increase the aperture ratio of light by minimizing the size of the organic EL element. However, since there is a limit to the high integration of each element, light emission is taken from the substrate on the side opposite to the side on which the organic EL element is formed. In such a method, it is difficult to obtain sufficient luminance.
【００１３】これに対して、基板として単結晶シリコン
を用いて、アクティブマトリクス駆動素子として基板に
ＭＯＳトランジスタを形成し、この基板上に陰極と、有
機ＥＬ層と、陽極をこの順序で形成し、基板の有機ＥＬ
層側から発光光を取出す方式が、特開平１１−５４２６
８号公報に開示されている。これは、従来の基板上に陽
極と、有機ＥＬ層と、陰極とをこの順序で形成したもの
とは、逆の構成を有するものであリ、発光光の開口率は
最大となるが、単純にこの構成としても、最適化された
構造とはなっていないため、十分な発光光の輝度を得る
ことが困難であるという課題があった。On the other hand, a MOS transistor is formed on a substrate as an active matrix drive element using single crystal silicon as a substrate, and a cathode, an organic EL layer, and an anode are formed on the substrate in this order. Organic EL for substrate
Japanese Patent Application Laid-Open No. 11-5426 discloses a method for extracting emitted light from the layer side.
No. 8 discloses this. This has a configuration opposite to that of a conventional substrate in which an anode, an organic EL layer, and a cathode are formed in this order, and the aperture ratio of emitted light is maximized. However, even with this configuration, there is a problem that it is difficult to obtain sufficient luminance of emitted light because the structure is not optimized.
【００１４】また、この場合において、有機ＥＬ層上に
形成される陽極は、透明導電膜で構成する必要がある
が、高い光透過率と低抵抗値を有する透明導電膜を形成
する条件では、有機ＥＬ層の特性を損なう可能性がある
という課題があった。In this case, the anode formed on the organic EL layer must be made of a transparent conductive film. However, under the conditions for forming a transparent conductive film having high light transmittance and low resistance, There is a problem that the characteristics of the organic EL layer may be impaired.
【００１５】そこで本発明は、上記課題を解決して、有
機エレクトロルミネセンス素子において、基板上に形成
された有機エレクトロルミネセンス層側から高い発光効
率で発光光を取出すことのできる有機エレクトロルミネ
センス素子を提供することを目的とするものである。In view of the above, the present invention has been made to solve the above-mentioned problems, and in an organic electroluminescence device, an organic electroluminescence device capable of extracting light with high luminous efficiency from an organic electroluminescence layer formed on a substrate. It is intended to provide an element.
【００１６】[0016]
【課題を解決するための手段】上記目的を達成するため
の手段として、第１の発明は、基板と、前記基板上に順
次形成された陰極と、電子輸送層と、発光層と、ホール
輸送層と、陽極とを有する有機エレクトロルミネセンス
素子において、前記電子輸送層と前記発光層との間にホ
ールブロック層を設け、且つ前記ホール輸送層と前記陽
極との間に保護層を設けたことを特徴とする有機エレク
トロルミネセンス素子である。According to a first aspect of the present invention, a substrate, a cathode sequentially formed on the substrate, an electron transport layer, a light-emitting layer, and a hole transport layer are provided. In an organic electroluminescence device having a layer and an anode, a hole blocking layer is provided between the electron transport layer and the light emitting layer, and a protective layer is provided between the hole transport layer and the anode. An organic electroluminescent device characterized by the following.
【００１７】また、第２の発明は、第１の発明の有機エ
レクトロルミネセンス素子において、前記保護層をフッ
化リチュウムと硫化銅とより構成したことを特徴とする
ものである。According to a second aspect of the present invention, in the organic electroluminescent device according to the first aspect, the protective layer is composed of lithium fluoride and copper sulfide.
【００１８】[0018]
【発明の実施の形態】以下、本発明の実施の形態につ
き、好ましい実施例により、図面を参照して説明する。Preferred embodiments of the present invention will be described below with reference to the accompanying drawings.
【００１９】＜実施例＞図２は、本発明の有機ＥＬ素子
の実施例を示す概略部分断面図であり、図３は、本発明
の有機ＥＬ素子の実施例及び比較例における素子形状を
示す上面図である。まず本実施例の有機ＥＬ素子２０の
概略形状を説明する。図３に示すように、基板１１上
に、縦の長さが５ｍｍ、横の長さが３０ｍｍの陰極１２
と、後述する積層構造を有して、縦、横の長さがともに
１５ｍｍの有機ＥＬ層１９及び保護層１７と、縦の長さ
が３０ｍｍで横の長さが５ｍｍの陽極１８とを、この順
序で積層して、有機ＥＬ素子２０を得た。<Example> FIG. 2 is a schematic partial cross-sectional view showing an example of the organic EL device of the present invention, and FIG. 3 shows the device shape of the example of the organic EL device of the present invention and a comparative example. It is a top view. First, the schematic shape of the organic EL element 20 of this embodiment will be described. As shown in FIG. 3, a cathode 12 having a vertical length of 5 mm and a horizontal length of 30 mm is provided on a substrate 11.
And an organic EL layer 19 and a protective layer 17 having a laminated structure described later and having both a vertical and horizontal length of 15 mm, and an anode 18 having a vertical length of 30 mm and a horizontal length of 5 mm, The organic EL device 20 was obtained by stacking in this order.
【００２０】次に、具体的な有機ＥＬ素子２０の構成に
ついて説明する。図２に示すように、まず、２インチサ
イズの単結晶シリコン基板１１上に、ＣＶＤ法により厚
さ４２０ｎｍのＳｉＯ2からなる図示しない絶縁膜を形
成した。この絶縁膜の上に、マスク蒸着法により、５ｍ
ｍ×３０ｍｍの長方形状に厚さ８０ｎｍのＡｌと、厚さ
１ｎｍのＬｉＦ（フッ化リチウム）を成膜して、陰極１
１を形成した。続いて、陰極１１の中心に、１５ｍｍ×
１５ｍｍの正方形状の有機ＥＬ層１９を形成した。Next, a specific configuration of the organic EL element 20 will be described. As shown in FIG. 2, first, an insulating film (not shown) made of SiO 2 having a thickness of 420 nm was formed on a 2-inch single crystal silicon substrate 11 by a CVD method. On this insulating film, 5 m
A 80 m thick Al film and a 1 nm thick LiF (lithium fluoride) film are formed in a rectangular shape of mx 30 mm.
1 was formed. Subsequently, 15 mm ×
A 15 mm square organic EL layer 19 was formed.
【００２１】有機ＥＬ層１９は、電子輸送層１３、ホー
ルブロック層１４、電子輸送性発光層（以下、単に発光
層ともいう）１５、ホール輸送層１６をこの順序で積層
したものから構成される。これらの各層はいずれもマス
ク蒸着法で形成される。The organic EL layer 19 is formed by laminating an electron transport layer 13, a hole blocking layer 14, an electron transport light emitting layer (hereinafter, also simply referred to as a light emitting layer) 15, and a hole transport layer 16 in this order. . Each of these layers is formed by a mask evaporation method.
【００２２】電子輸送層１３として厚さ２０ｎｍのＡｌ
ｑ３を形成し、その上にホ−ルブロック層として厚さ１
５ｎｍのバソキュプロフィン（以下、単にＢＣＰともい
う）を形成し、更にその上に電子輸送性発光層１５とし
て厚さ２０ｎｍのＡｌｑ３を形成し、更にその上にホ−
ル輸送層１６として厚さ５０ｎｍの４，４’−ビス［Ｎ
−（１−ナフチル）−Ｎ−フェニル−アミノ］ビフェニ
ル（以下、単にα−ＮＰＤともいう）を形成した。The electron transport layer 13 is made of Al having a thickness of 20 nm.
q3, and a hole blocking layer having a thickness of 1
A 5 nm bathocuprofin (hereinafter, also simply referred to as BCP) is formed, and a 20 nm-thick Alq3 is formed thereon as an electron transporting light emitting layer 15.
4,4′-bis [N
-(1-Naphthyl) -N-phenyl-amino] biphenyl (hereinafter simply referred to as α-NPD) was formed.
【００２３】この有機ＥＬ層１９上に、イオンプラズマ
による熱や高エネルギ−粒子衝撃によるダメ−ジから有
機ＥＬ層１９を守るための保護層１７を形成した。保護
層１７として、厚さ１．５ｎｍのＬｉＦとその上に厚さ
２ｎｍのＣｕ2Ｓ（硫化銅）を形成した。この保護層１
７上に、ＩＢＳ（イオンビ−ムスパッタ）法により、陰
極１２と直交するように、５ｍｍ×３０ｍｍの長方形状
で厚さ８０ｎｍのＩＺＯ（Ｉｎ2Ｏ3が９０ｗｔ％、Ｚｎ
Ｏが１０ｗｔ％である膜）膜を形成し、有機ＥＬ素子２
０を作製した。On this organic EL layer 19, a protective layer 17 for protecting the organic EL layer 19 from damage due to heat from ion plasma or high energy particle bombardment was formed. As the protective layer 17, LiF having a thickness of 1.5 nm and Cu 2 S (copper sulfide) having a thickness of 2 nm were formed thereon. This protective layer 1
7, an IZO (In 2 O 3 90 wt%, ZnO, 80 nm thick, rectangular, 5 mm × 30 mm) was formed by an IBS (ion beam sputtering) method so as to be orthogonal to the cathode 12.
O is 10 wt%) to form an organic EL element 2
0 was produced.
【００２４】この実施例の有機ＥＬ素子２０について、
電圧、電流密度、発光輝度の関係をしらべ、発光効率
（電流効率）を求めた。発光効率は、２．６２ｃｄ／Ａ
であった（以下の表１に示す）。With respect to the organic EL device 20 of this embodiment,
Luminous efficiency (current efficiency) was determined by examining the relationship between voltage, current density, and light emission luminance. The luminous efficiency is 2.62 cd / A
(Shown in Table 1 below).
【００２５】＜比較例１＞実施例において、ホールブロ
ック層１４を形成せず、電子輸送層１３及び電子輸送性
発光層１５として厚さ５０ｎｍのＡｌｑ３を形成した以
外は、実施例と同様にして有機ＥＬ素子２０Ａを作製し
た。有機ＥＬ層１９’は電子輸送性発光層１５（電子輸
送層１３を含む）とホール輸送層１６から構成される。
この比較例１の有機ＥＬ素子の発光効率を測定し、１．
３６ｃｄ／Ａの値を得た（以下の表１に示す）。<Comparative Example 1> In the same manner as in the example, except that the hole blocking layer 14 was not formed and Alq3 having a thickness of 50 nm was formed as the electron transporting layer 13 and the electron transporting light emitting layer 15. An organic EL device 20A was produced. The organic EL layer 19 'includes an electron transporting light emitting layer 15 (including the electron transporting layer 13) and a hole transporting layer 16.
The luminous efficiency of the organic EL device of Comparative Example 1 was measured.
A value of 36 cd / A was obtained (shown in Table 1 below).
【００２６】[0026]
【表１】 [Table 1]
【００２７】＜比較例２＞実施例において、保護層１７
を形成しない以外は、実施例と同様にして、比較例２の
有機ＥＬ素子２０Ｂを作製した。比較例２の有機ＥＬ素
子に電圧を印加して、発光を調べたが、２０Ｖを印加し
ても発光が認められなかった。<Comparative Example 2> In Example, the protective layer 17 was used.
The organic EL element 20B of Comparative Example 2 was produced in the same manner as in Example except that the organic EL element 20B was not formed. A voltage was applied to the organic EL device of Comparative Example 2 to examine light emission. However, no light emission was observed even when 20 V was applied.
【００２８】実施例及び比較例１，２の結果を検討する
と以下の通りである。まず、保護層１７に付いては、こ
れを形成していない比較例２においては、発光が認めら
れず、これは、陽極１８としてＩＺＯ膜を形成した際
に、ＩＢＳ法を用いたが、熱や高エネルギ−粒子衝撃に
よリ有機ＥＬ層がダメージを受けたためと考えられる。
実施例と比較例１においては、保護層１７を形成してあ
るので、有機ＥＬ膜にはダメージが少なく発光すること
ができる。The results of Examples and Comparative Examples 1 and 2 are as follows. First, in Comparative Example 2 in which the protective layer 17 was not formed, no light emission was observed. This was because the IBS method was used when the IZO film was formed as the anode 18. It is considered that the organic EL layer was damaged by high energy and particle impact.
In the example and the comparative example 1, since the protective layer 17 is formed, the organic EL film can emit light with little damage.
【００２９】表１によれば、実施例の発光効率は２．６
２ｃｄ／Ａであり、比較例１の１．３６ｃｄ／Ａに対し
約２倍の高い値である。これは、実施例の有機ＥＬ層に
おいて、ＢＣＰからなるホールブロック層を電子輸送層
と電子輸送性発光層との間に設けたことにより、発光層
に注入される電子とホ−ルのバランスが良くなり、これ
らの結合が増加したために発光効率が増加したものと考
えられる。According to Table 1, the luminous efficiency of the embodiment is 2.6.
2 cd / A, which is about twice as high as 1.36 cd / A of Comparative Example 1. This is because, in the organic EL layer of the example, the hole blocking layer made of BCP is provided between the electron transporting layer and the electron transporting light emitting layer, so that the balance between the electrons injected into the light emitting layer and the hole is improved. It is considered that the luminous efficiency increased due to the increase in these bonds.
【００３０】これらの結果より、基板の有機ＥＬ層が形
成されている側の方向に発光光を取り出す有機エレクト
ロルミネッセンス素子では、基板上に陰極と有機ＥＬ層
と有保護層と陽極とをこの順に形成し、更に有機ＥＬ層
は電子輸送層とホ−ルブロック層と電子輸送性発光層と
により形成されることにより、有機ＥＬ素子の発光効率
を高くすることできることがわかる。From these results, in the organic electroluminescent device that emits light in the direction of the substrate on which the organic EL layer is formed, the cathode, the organic EL layer, the protective layer, and the anode are arranged in this order on the substrate. It can be seen that the luminous efficiency of the organic EL element can be increased by forming the organic EL layer and further forming the organic EL layer by the electron transport layer, the hole block layer, and the electron transporting light emitting layer.
【００３１】なお、陰極、電子輸送層、ホ−ルブロック
層、電子輸送性発光層、ホ−ル輸送層、陽極をそれぞれ
構成する材料は、実施例の材料に限定されるものではな
い。例えば、陰極を構成する材料としては、電子輸送層
に電子を注入し、電子輸送性発光層より放出された発光
光を高い反射率で反射させるもので、且つ仕事関数の小
さな銀（Ａｇ）、スズ（Ｓｎ）、鉛（Ｐｂ）、マグネシ
ウム（Ｍｇ）、マンガン（Ｍｎ）等の金属やこれらの合
金でも良い。The materials constituting the cathode, the electron transporting layer, the hole blocking layer, the electron transporting light emitting layer, the hole transporting layer, and the anode are not limited to those of the examples. For example, as a material constituting the cathode, silver (Ag) which injects electrons into the electron transporting layer and reflects emission light emitted from the electron transporting light emitting layer with high reflectance, and has a small work function, Metals such as tin (Sn), lead (Pb), magnesium (Mg), and manganese (Mn) or alloys thereof may be used.
【００３２】また、電子輸送層を構成する材料として
は、ペリレン誘導体、ビススチリル誘導体、ピラジン誘
導体等を用いても良い。ホ−ル輸送層を構成する材料と
しては、ジアミン誘導体、ベンジジン誘導体、スチルア
ミン誘導体、トリフェニルメタン誘導体、ヒドラゾン誘
導体等を用いても良い。ホ−ルブロック層は電子を通
し、ホ−ルをブロックするのもであればＢＣＰに限定さ
れるものではなく、ビス（２−メチル−８−ヒドロキシ
キノリノラト）ｐ−フェニルフェノキシアルミニウム
（ＢＡｌｑ）や３−（４−ビフェニルイル）−４−フェ
ニル−５−ｔ−ブチルフェニル−[１，２，４]−トリア
ゾール（ＴＡＺ）等を用いても良い。Further, as a material constituting the electron transport layer, a perylene derivative, a bisstyryl derivative, a pyrazine derivative or the like may be used. As a material constituting the hole transport layer, a diamine derivative, a benzidine derivative, a stillamine derivative, a triphenylmethane derivative, a hydrazone derivative, or the like may be used. The hole blocking layer is not limited to BCP as long as it can pass electrons and block the hole. Bis (2-methyl-8-hydroxyquinolinolato) p-phenylphenoxyaluminum (BAlq) ) Or 3- (4-biphenylyl) -4-phenyl-5-t-butylphenyl- [1,2,4] -triazole (TAZ).
【００３３】陽極に使用できる透明導電性膜としては、
ホ−ル輸送層にホ−ルを注入し、かつ発光層で放出され
る発光光を効率よく透過するものであれば良く、実施例
で示したＩＺＯに限定されるものではなく、ＩＴＯ（Ｉ
ｎｄｉｕｍ−Ｔｉｎ Ｏｘｉｄｅ：Ｉｎ2Ｏ3−Ｓｎ
Ｏ2）、二酸化スズ（ＳｎＯ2）、二酸化スズ−アンチモ
ン混合物（ＳｎＯ2＋Ｓｂ）、酸化インジウム（Ｉｎ2Ｏ
3）、酸化亜鉛−アルミニウム混合物（ＺｎＯ＋Ａｌ）
やこれらに微量の添加物を含んだもの、ニッケル（Ｎ
ｉ）、金（Ａｕ）、白金（Ｐｔ）等の金属を極薄く成膜
したもの、あるいはこれらに微量の添加物が入ったも
の、または混合物でも良い。The transparent conductive film that can be used for the anode includes:
Any material can be used as long as it is capable of injecting a hole into the hole transport layer and efficiently transmitting the light emitted from the light emitting layer, and is not limited to the IZO shown in the embodiment.
ndium-Tin Oxide: In 2 O 3 -Sn
O 2 ), tin dioxide (SnO 2 ), tin dioxide-antimony mixture (SnO 2 + Sb), indium oxide (In 2 O)
3 ), zinc oxide-aluminum mixture (ZnO + Al)
And those containing trace amounts of additives, nickel (N
A metal film such as i), gold (Au), platinum (Pt), or the like, may be formed as an extremely thin film, or a material containing a small amount of an additive or a mixture thereof.
【００３４】[0034]
【発明の効果】以上説明したように、本発明の有機エレ
クトロルミネセンス素子は、請求項１及び２記載によれ
ば、電子輸送層と発光層との間にホールブロック層を設
け、且つホール輸送層と陽極との間に保護層を設けたこ
とにより、基板上に形成された有機エレクトロルミネセ
ンス層側から高い発光効率で発光光を取出すことのでき
る有機エレクトロルミネセンス素子を提供することがで
きるという効果がある。As described above, according to the first and second aspects of the organic electroluminescent device of the present invention, a hole blocking layer is provided between an electron transport layer and a light emitting layer, and a hole transport layer is provided. By providing the protective layer between the layer and the anode, it is possible to provide an organic electroluminescent element capable of extracting light with high luminous efficiency from the side of the organic electroluminescent layer formed on the substrate. This has the effect.
【図１】有機ＥＬ素子の基本構成を示す概略部分断面図
である。FIG. 1 is a schematic partial cross-sectional view showing a basic configuration of an organic EL element.
【図２】本発明の有機ＥＬ素子の実施例を示す概略部分
断面図である。FIG. 2 is a schematic partial sectional view showing an example of the organic EL device of the present invention.
【図３】本発明の有機ＥＬ素子の実施例及び比較例にお
ける素子形状を示す上面図である。FIG. 3 is a top view illustrating an element shape of an organic EL element according to an embodiment of the present invention and a comparative example.
１…（透明）基板、２…陽極、３…ホール輸送層、４…
発光層、５…陰極、６…電源、７…発光光、８…有機Ｅ
Ｌ層、１０…有機ＥＬ素子、１１…シリコン基板、１２
…陰極、１３…電子輸送層、１４…ホールブロック層、
１５…電子輸送性発光層、１６…ホール輸送層、１７…
保護層、１８…陽極、１９，１９Ａ…有機ＥＬ層、２
０，２０Ａ，２０Ｂ…有機ＥＬ素子、２１…発光光。1 ... (transparent) substrate, 2 ... anode, 3 ... hole transport layer, 4 ...
Light-emitting layer, 5: cathode, 6: power supply, 7: emitted light, 8: organic E
L layer, 10: organic EL element, 11: silicon substrate, 12
... a cathode, 13 ... an electron transport layer, 14 ... a hole block layer,
15: electron transporting light emitting layer, 16: hole transport layer, 17 ...
Protective layer, 18: anode, 19, 19A: organic EL layer, 2
0, 20A, 20B: Organic EL element, 21: Emission light.
Claims (2)
と、電子輸送層と、発光層と、ホール輸送層と、陽極と
を有する有機エレクトロルミネセンス素子において、 前記電子輸送層と前記発光層との間にホールブロック層
を設け、且つ前記ホール輸送層と前記陽極との間に保護
層を設けたことを特徴とする有機エレクトロルミネセン
ス素子。1. An organic electroluminescence device comprising a substrate, a cathode formed sequentially on the substrate, an electron transport layer, a light emitting layer, a hole transport layer, and an anode, wherein the electron transport layer and the An organic electroluminescence device comprising a hole blocking layer provided between the light emitting layer and a protective layer provided between the hole transport layer and the anode.
ンス素子において、前記保護層をフッ化リチュウムと硫
化銅とより構成したことを特徴とする有機エレクトロル
ミネセンス素子。2. The organic electroluminescent device according to claim 1, wherein said protective layer is composed of lithium fluoride and copper sulfide.
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Cited By (3)
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|---|---|---|---|---|
| JP2005123205A (en) * | 2002-10-24 | 2005-05-12 | Toyota Industries Corp | Organic el element |
| JP2006302723A (en) * | 2005-04-22 | 2006-11-02 | Hitachi Displays Ltd | Organic light emitting display device |
| JP2006324536A (en) * | 2005-05-20 | 2006-11-30 | Hitachi Displays Ltd | Organic emission display unit |
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|---|---|---|---|---|
| CN104124393A (en) * | 2013-04-24 | 2014-10-29 | 海洋王照明科技股份有限公司 | Organic light-emitting device and preparation method thereof |
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|---|---|---|---|---|
| JPH10308284A (en) * | 1997-05-08 | 1998-11-17 | Idemitsu Kosan Co Ltd | Organic electroluminescent element |
| JPH11204262A (en) * | 1998-01-13 | 1999-07-30 | Mitsui Chem Inc | Organic electroluminescent element |
| JP2000243571A (en) * | 1998-12-22 | 2000-09-08 | Mitsubishi Chemicals Corp | Organic electroluminescent element |
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2001
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH10308284A (en) * | 1997-05-08 | 1998-11-17 | Idemitsu Kosan Co Ltd | Organic electroluminescent element |
| JPH11204262A (en) * | 1998-01-13 | 1999-07-30 | Mitsui Chem Inc | Organic electroluminescent element |
| JP2000243571A (en) * | 1998-12-22 | 2000-09-08 | Mitsubishi Chemicals Corp | Organic electroluminescent element |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005123205A (en) * | 2002-10-24 | 2005-05-12 | Toyota Industries Corp | Organic el element |
| JP2006302723A (en) * | 2005-04-22 | 2006-11-02 | Hitachi Displays Ltd | Organic light emitting display device |
| JP4555727B2 (en) * | 2005-04-22 | 2010-10-06 | 株式会社 日立ディスプレイズ | Organic light emitting display |
| JP2006324536A (en) * | 2005-05-20 | 2006-11-30 | Hitachi Displays Ltd | Organic emission display unit |
| JP4596977B2 (en) * | 2005-05-20 | 2010-12-15 | 株式会社 日立ディスプレイズ | Organic light emitting display |
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