JP2002246339A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JP2002246339A
JP2002246339A JP2001350635A JP2001350635A JP2002246339A JP 2002246339 A JP2002246339 A JP 2002246339A JP 2001350635 A JP2001350635 A JP 2001350635A JP 2001350635 A JP2001350635 A JP 2001350635A JP 2002246339 A JP2002246339 A JP 2002246339A
Authority
JP
Japan
Prior art keywords
semiconductor substrate
polished
substrate
semiconductor
analysis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001350635A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002246339A5 (enExample
Inventor
Katsuro Mizukoshi
克郎 水越
Akira Shimase
朗 嶋瀬
Shingo Yorisaki
真吾 寄崎
Takeshi Suzuki
猛司 鈴木
Susumu Ogushi
享 小串
Michinobu Mizumura
通伸 水村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2001350635A priority Critical patent/JP2002246339A/ja
Publication of JP2002246339A publication Critical patent/JP2002246339A/ja
Publication of JP2002246339A5 publication Critical patent/JP2002246339A5/ja
Pending legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2001350635A 2000-11-15 2001-11-15 半導体装置の製造方法 Pending JP2002246339A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001350635A JP2002246339A (ja) 2000-11-15 2001-11-15 半導体装置の製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000347516 2000-11-15
JP2000-347516 2000-11-15
JP2001350635A JP2002246339A (ja) 2000-11-15 2001-11-15 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2002246339A true JP2002246339A (ja) 2002-08-30
JP2002246339A5 JP2002246339A5 (enExample) 2005-06-30

Family

ID=26603985

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001350635A Pending JP2002246339A (ja) 2000-11-15 2001-11-15 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JP2002246339A (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006343100A (ja) * 2005-05-11 2006-12-21 Ricoh Co Ltd 半導体装置の不良箇所観察のためのシリコン基板加工方法及び不良箇所特定方法
KR100801857B1 (ko) 2006-08-24 2008-02-11 피에스케이 주식회사 기판 에싱 방법
KR101056146B1 (ko) * 2009-02-23 2011-08-10 한국기계연구원 프로브카드의 전기적 전달특성 측정을 위한 프로브카드 고정장치
JP2017028140A (ja) * 2015-07-24 2017-02-02 株式会社ディスコ プラズマ援用加工装置及び加工方法
CN111745313A (zh) * 2019-03-26 2020-10-09 株式会社迪思科 检查用基板和检查方法
CN114868014A (zh) * 2020-03-12 2022-08-05 株式会社岛津制作所 离子分析装置

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006343100A (ja) * 2005-05-11 2006-12-21 Ricoh Co Ltd 半導体装置の不良箇所観察のためのシリコン基板加工方法及び不良箇所特定方法
KR100801857B1 (ko) 2006-08-24 2008-02-11 피에스케이 주식회사 기판 에싱 방법
KR101056146B1 (ko) * 2009-02-23 2011-08-10 한국기계연구원 프로브카드의 전기적 전달특성 측정을 위한 프로브카드 고정장치
JP2017028140A (ja) * 2015-07-24 2017-02-02 株式会社ディスコ プラズマ援用加工装置及び加工方法
CN111745313A (zh) * 2019-03-26 2020-10-09 株式会社迪思科 检查用基板和检查方法
CN111745313B (zh) * 2019-03-26 2024-05-07 株式会社迪思科 检查用基板和检查方法
CN114868014A (zh) * 2020-03-12 2022-08-05 株式会社岛津制作所 离子分析装置

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