JP2002246333A5 - - Google Patents
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- JP2002246333A5 JP2002246333A5 JP2001041188A JP2001041188A JP2002246333A5 JP 2002246333 A5 JP2002246333 A5 JP 2002246333A5 JP 2001041188 A JP2001041188 A JP 2001041188A JP 2001041188 A JP2001041188 A JP 2001041188A JP 2002246333 A5 JP2002246333 A5 JP 2002246333A5
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- JP
- Japan
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Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001041188A JP3970530B2 (ja) | 2001-02-19 | 2001-02-19 | 半導体装置およびその製造方法 |
| US09/915,269 US6583510B2 (en) | 2001-02-19 | 2001-07-27 | Semiconductor device with varying thickness gold electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001041188A JP3970530B2 (ja) | 2001-02-19 | 2001-02-19 | 半導体装置およびその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002246333A JP2002246333A (ja) | 2002-08-30 |
| JP2002246333A5 true JP2002246333A5 (cg-RX-API-DMAC7.html) | 2005-07-14 |
| JP3970530B2 JP3970530B2 (ja) | 2007-09-05 |
Family
ID=18903668
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001041188A Expired - Fee Related JP3970530B2 (ja) | 2001-02-19 | 2001-02-19 | 半導体装置およびその製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US6583510B2 (cg-RX-API-DMAC7.html) |
| JP (1) | JP3970530B2 (cg-RX-API-DMAC7.html) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004335530A (ja) * | 2003-04-30 | 2004-11-25 | Mitsubishi Electric Corp | リッジ導波路型半導体レーザ |
| EP1668687A4 (en) * | 2003-09-19 | 2007-11-07 | Tinggi Tech Private Ltd | FABRICATION OF A CONDUCTIVE METAL LAYER ON SEMICONDUCTOR COMPONENTS |
| JP2007521635A (ja) * | 2003-09-19 | 2007-08-02 | ティンギ テクノロジーズ プライベート リミテッド | 半導体デバイスの製造 |
| JP4696522B2 (ja) * | 2003-10-14 | 2011-06-08 | 日亜化学工業株式会社 | 半導体レーザ素子 |
| JP2005203746A (ja) * | 2003-12-15 | 2005-07-28 | Sharp Corp | 半導体レーザ素子およびその製造方法および光ディスク装置および光伝送システム |
| JP2007535804A (ja) * | 2004-03-15 | 2007-12-06 | ティンギ テクノロジーズ プライベート リミテッド | 半導体デバイスの製造 |
| KR20060126823A (ko) * | 2004-03-15 | 2006-12-08 | 산요덴키가부시키가이샤 | 반도체 레이저 소자, 및 그 제조 방법 |
| JP2007533133A (ja) | 2004-04-07 | 2007-11-15 | ティンギ テクノロジーズ プライベート リミテッド | 半導体発光ダイオード上での反射層の作製 |
| JP4889930B2 (ja) * | 2004-08-27 | 2012-03-07 | シャープ株式会社 | 窒化物半導体レーザ素子の製造方法 |
| JP4956928B2 (ja) * | 2004-09-28 | 2012-06-20 | 日亜化学工業株式会社 | 半導体装置 |
| JP2006108225A (ja) * | 2004-10-01 | 2006-04-20 | Mitsubishi Electric Corp | 半導体レーザ |
| SG130975A1 (en) * | 2005-09-29 | 2007-04-26 | Tinggi Tech Private Ltd | Fabrication of semiconductor devices for light emission |
| SG131803A1 (en) * | 2005-10-19 | 2007-05-28 | Tinggi Tech Private Ltd | Fabrication of transistors |
| SG133432A1 (en) * | 2005-12-20 | 2007-07-30 | Tinggi Tech Private Ltd | Localized annealing during semiconductor device fabrication |
| SG140473A1 (en) | 2006-08-16 | 2008-03-28 | Tinggi Tech Private Ltd | Improvements in external light efficiency of light emitting diodes |
| SG140512A1 (en) * | 2006-09-04 | 2008-03-28 | Tinggi Tech Private Ltd | Electrical current distribution in light emitting devices |
| KR101254817B1 (ko) * | 2007-04-20 | 2013-04-15 | 엘지전자 주식회사 | 반도체 레이저 다이오드 |
| US8369426B2 (en) * | 2007-05-04 | 2013-02-05 | Ikanos Communications, Inc. | Reducing the effect of noise in a multi-channel telecommunication receiver |
| JP4967875B2 (ja) | 2007-07-17 | 2012-07-04 | 三菱電機株式会社 | 半導体発光装置及びその製造方法 |
| JP2010056583A (ja) * | 2009-12-10 | 2010-03-11 | Sanyo Electric Co Ltd | 半導体レーザ素子 |
| GB201005696D0 (en) | 2010-04-06 | 2010-05-19 | Oclaro Technology Plc | Semiconductor laser diodes |
| US12292626B2 (en) * | 2020-05-06 | 2025-05-06 | The Trustees Of The Stevens Institute Of Technology | Devices and methods for low voltage optical modulation |
| JP7613633B2 (ja) * | 2022-03-15 | 2025-01-15 | 三菱電機株式会社 | 半導体レーザー |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0293185B1 (en) * | 1987-05-26 | 1994-02-02 | Kabushiki Kaisha Toshiba | Semiconductor laser device and method for manufacturing the same |
| US4858241A (en) * | 1987-05-26 | 1989-08-15 | Kabushiki Kaisha Toshiba | Semiconductor laser device |
| JPH0237783A (ja) * | 1988-07-27 | 1990-02-07 | Nec Corp | 端面発光型光半導体装置の製造方法 |
| JPH05114763A (ja) | 1991-03-25 | 1993-05-07 | Nec Corp | 半導体レ−ザの製造方法 |
| US5422307A (en) * | 1992-03-03 | 1995-06-06 | Sumitomo Electric Industries, Ltd. | Method of making an ohmic electrode using a TiW layer and an Au layer |
| JPH0878701A (ja) * | 1994-09-05 | 1996-03-22 | Japan Energy Corp | 半導体装置及びその製造方法 |
| JP4572430B2 (ja) * | 1999-08-11 | 2010-11-04 | 富士ゼロックス株式会社 | オーミック電極の形成方法 |
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2001
- 2001-02-19 JP JP2001041188A patent/JP3970530B2/ja not_active Expired - Fee Related
- 2001-07-27 US US09/915,269 patent/US6583510B2/en not_active Expired - Fee Related