JP2002217436A - Manufacture of integrated photovoltaic device - Google Patents
Manufacture of integrated photovoltaic deviceInfo
- Publication number
- JP2002217436A JP2002217436A JP2001013878A JP2001013878A JP2002217436A JP 2002217436 A JP2002217436 A JP 2002217436A JP 2001013878 A JP2001013878 A JP 2001013878A JP 2001013878 A JP2001013878 A JP 2001013878A JP 2002217436 A JP2002217436 A JP 2002217436A
- Authority
- JP
- Japan
- Prior art keywords
- photoelectric conversion
- film
- back electrode
- photovoltaic device
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Photovoltaic Devices (AREA)
- Drying Of Semiconductors (AREA)
- Weting (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、複数の光電変換素
子を電気的に直列接続させてなる集積型光起電力装置を
製造する方法に関し、特に、隣合う光電変換素子間にお
ける背面電極の分離形成処理に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing an integrated photovoltaic device in which a plurality of photoelectric conversion elements are electrically connected in series, and more particularly to a method for separating a back electrode between adjacent photoelectric conversion elements. Related to the forming process.
【０００２】[0002]
【従来の技術】ガラス，プラスチック等の透光性を有す
る基板上に、ＩＴＯ，ＳｎＯ2 等の透光性電極、ｐ型，
ｉ型及びｎ型の各半導体膜を有する光電変換層、Ａｌ，
Ａｇ等の背面電極をこの順に積層させた構成を有する複
数の光電変換素子を、隣合う光電変換素子間で一方の光
電変換素子の透光性電極と他方の光電変換素子の背面電
極とを電気的に導通させた態様にて、直列接続すること
により、集積型光起電力装置は構成されている。このよ
うな集積型光起電力装置を製造する場合には、形成した
背面電極用の金属膜（背面電極膜）を各光電変換素子毎
に分離する必要がある。この分離処理には、作業の容易
性のために、レーザビーム等のエネルギビームの照射を
利用することが一般的に行われている。BACKGROUND OF THE INVENTION Glass, on a substrate having a light-transmitting plastic, ITO, transparent electrode of SnO 2 or the like, p-type,
a photoelectric conversion layer having i-type and n-type semiconductor films, Al,
A plurality of photoelectric conversion elements having a configuration in which Ag or the like rear electrodes are stacked in this order are electrically connected between adjacent photoelectric conversion elements by transmitting a light-transmitting electrode of one photoelectric conversion element and a rear electrode of the other photoelectric conversion element. The integrated photovoltaic device is configured by being connected in series in an electrically conductive mode. In the case of manufacturing such an integrated photovoltaic device, it is necessary to separate the formed back electrode metal film (back electrode film) for each photoelectric conversion element. In this separation processing, irradiation of an energy beam such as a laser beam is generally used for ease of operation.
【０００３】図３は、集積型光起電力装置を製造するた
めの従来の一手法（以下、第１従来例という）の工程を
示す図である。まず、ガラス基板３１上に、例えばＳｎ
Ｏ2からなる透光性電極３２をパターン形成する（図３
（ａ））。内部にｐｉｎ構造を有する非晶質シリコン膜
からなる光電変換層３３をパターン形成する（図３
（ｂ））。FIG. 3 is a diagram showing the steps of a conventional method (hereinafter referred to as a first conventional example) for manufacturing an integrated photovoltaic device. First, for example, Sn on the glass substrate 31
The translucent electrode 32 made of O 2 is patterned (FIG. 3
(A)). A photoelectric conversion layer 33 made of an amorphous silicon film having a pin structure therein is formed by patterning (FIG. 3).
(B)).
【０００４】次に、光電変換層３３の欠損領域も含む全
域に例えばアルミニウムからなる背面電極膜４４を形成
する（図３（ｃ））。最後に、ガラス基板３１側からレ
ーザビームＬＢ（図中、矢符で示す）を分離位置に照射
し、照射領域の光電変換層３３及び背面電極膜４４を除
去して分離溝５１を形成し、背面電極膜４４を分離して
各光電変換素子毎の背面電極３４を形成する（図３
（ｄ））。Next, a back electrode film 44 made of, for example, aluminum is formed on the entire area including the defective area of the photoelectric conversion layer 33 (FIG. 3C). Finally, a laser beam LB (indicated by an arrow in the figure) is irradiated to the separation position from the glass substrate 31 side, and the photoelectric conversion layer 33 and the back electrode film 44 in the irradiation area are removed to form a separation groove 51. The back electrode film 44 is separated to form a back electrode 34 for each photoelectric conversion element (FIG. 3).
(D)).
【０００５】このような第１従来例では、背面電極膜４
４を分離するために照射するレーザビームの最適化条件
の設定が困難であった。レーザビームの強度が強すぎる
場合には、加工部端面近傍の光電変換層３３の非晶質シ
リコンが結晶化して透光性電極３２と背面電極３４とが
短絡してしまう。この短絡を防止するためには、非晶質
シリコンが結晶化しない程度までレーザビームの強度を
低くしなければならないが、このようにした場合には背
面電極膜４４の飛び残しが部分的に生じて、隣合う光電
変換素子間における背面電極３４の分離が不十分になっ
てしまって、歩留りの低下に結び付いていた。In such a first conventional example, the back electrode film 4
It was difficult to set the optimum conditions of the laser beam to be irradiated to separate the laser beam No. 4 from the laser beam. When the intensity of the laser beam is too high, the amorphous silicon of the photoelectric conversion layer 33 near the end face of the processed portion is crystallized, and the translucent electrode 32 and the back electrode 34 are short-circuited. In order to prevent this short circuit, the intensity of the laser beam must be reduced to such an extent that the amorphous silicon does not crystallize. In this case, however, the back electrode film 44 is partially left behind. As a result, the separation of the back electrode 34 between adjacent photoelectric conversion elements becomes insufficient, leading to a reduction in yield.
【０００６】そこで、レーザビームの照射によって複数
の分離溝を形成するようにした手法（以下、第２従来例
という）が知られている。図４は、この第２従来例の工
程を示す図である。Therefore, a method of forming a plurality of separation grooves by irradiating a laser beam (hereinafter referred to as a second conventional example) is known. FIG. 4 is a view showing a process of the second conventional example.
【０００７】上述した第１従来例と同様に、ガラス基板
３１上に、ＳｎＯ2 からなる透光性電極３２と、内部に
ｐｉｎ構造を有する非晶質シリコン膜からなる光電変換
層３３をパターン形成した後に（図４（ａ），
（ｂ））、光電変換層３３の欠損領域も含む全域にアル
ミニウムからなる背面電極膜４４を形成する（図４
（ｃ））。In the same manner as in the first conventional example, a light-transmitting electrode 32 made of SnO 2 and a photoelectric conversion layer 33 made of an amorphous silicon film having a pin structure are formed on a glass substrate 31 by pattern formation. (See FIG. 4 (a),
(B), a back electrode film 44 made of aluminum is formed on the entire area including the defective area of the photoelectric conversion layer 33 (FIG. 4).
(C)).
【０００８】最後に、ガラス基板３１側からレーザビー
ムＬＢ（図中、矢符で示す）を分離領域に２ライン照射
し、照射領域の光電変換層３３及び背面電極膜４４を除
去して２本の分離溝５１ａ，５１ｂを形成し、背面電極
膜４４を分離して各光電変換素子毎の背面電極３４を形
成する（図４（ｄ））。この第２従来例では、背面電極
膜４４の飛び残しに伴う分離不良の影響を緩和するため
に、分離溝を２本にしている。[0008] Finally, a laser beam LB (indicated by an arrow in the figure) is irradiated from the glass substrate 31 side to the separation region by two lines, and the photoelectric conversion layer 33 and the back electrode film 44 in the irradiation region are removed to form two lines. The separation grooves 51a and 51b are formed, and the back electrode film 44 is separated to form the back electrode 34 for each photoelectric conversion element (FIG. 4D). In the second conventional example, two isolation grooves are provided in order to alleviate the influence of poor isolation due to the back electrode film 44 remaining behind.
【０００９】[0009]
【発明が解決しようとする課題】光電変換層の非晶質シ
リコン膜が３０００Å以下と薄い場合、または、光起電
力装置の面積が大きい場合には、このように複数の分離
溝を形成するようにしても、分離加工性が十分であると
は言えず、改善が望まれている。In the case where the amorphous silicon film of the photoelectric conversion layer is as thin as 3000 ° or less, or when the area of the photovoltaic device is large, it is necessary to form a plurality of separation grooves in this manner. However, the separation workability cannot be said to be sufficient, and improvement is desired.
【００１０】本発明は斯かる事情に鑑みてなされたもの
であり、エネルギビームの照射による複数の分離溝の形
成とそれらの分離溝に挟まれた背面電極膜の除去とを行
うことにより、各光電変換素子毎に背面電極を確実に分
離でき、歩留りの向上と出力特性の向上とを図れる集積
型光起電力装置の製造方法を提供することを目的とす
る。The present invention has been made in view of such circumstances, and by forming a plurality of separation grooves by irradiating an energy beam and removing a back electrode film sandwiched between the separation grooves, the present invention has been made. It is an object of the present invention to provide a method of manufacturing an integrated photovoltaic device in which a back electrode can be surely separated for each photoelectric conversion element and the yield and output characteristics can be improved.
【００１１】[0011]
【課題を解決するための手段】第１発明に係る集積型光
起電力装置の製造方法は、透光性基板上に透光性電極，
半導体からなる光電変換層及び背面電極をこの順に積層
した構成を有する複数の光電変換素子を、隣合う一方の
光電変換素子の前記透光性電極と他方の光電変換素子の
前記背面電極とを電気的に導通させた態様にて直列接続
させてなる集積型光起電力装置を製造する方法におい
て、前記透光性基板上に、前記光電変換素子毎に分離さ
れた前記透光性電極及び光電変換層をこの順に形成する
工程と、前記光電変換層の表面を含む前記透光性電極上
に、前記背面電極となる背面電極膜を形成する工程と、
該背面電極膜を前記光電変換素子毎に分離すべき部分に
エネルギビームを照射して複数の分離溝を形成する工程
と、該複数の分離溝に挟まれた領域の前記背面電極膜を
除去する工程とを有することを特徴とする。According to a first aspect of the present invention, there is provided a method of manufacturing an integrated photovoltaic device, comprising the steps of: providing a light-transmitting electrode on a light-transmitting substrate;
A plurality of photoelectric conversion elements having a configuration in which a photoelectric conversion layer and a back electrode made of a semiconductor are stacked in this order are electrically connected to the translucent electrode of one adjacent photoelectric conversion element and the back electrode of the other photoelectric conversion element. A method of manufacturing an integrated photovoltaic device connected in series in an electrically conductive manner, wherein the light-transmissive electrode and the photoelectric conversion device are separated from each other for each of the photoelectric conversion elements on the light-transmissive substrate. Forming a layer in this order, and forming a back electrode film serving as the back electrode on the translucent electrode including the surface of the photoelectric conversion layer,
Irradiating a portion of the back electrode film to be separated for each of the photoelectric conversion elements with an energy beam to form a plurality of separation grooves, and removing the back electrode film in a region sandwiched between the plurality of separation grooves. And a process.
【００１２】第１発明にあっては、背面電極膜を形成し
た後に、その分離領域にエネルギビームを照射して複数
の分離溝を形成し、それらの分離溝に挟まれた領域の背
面電極膜を除去する。よって、隣合う光電変換素子間の
背面電極同士を確実に分離でき、高い歩留りが得られる
と共に出力特性も良化する。In the first invention, after forming the back electrode film, the separation region is irradiated with an energy beam to form a plurality of separation grooves, and the back electrode film is formed in a region sandwiched between the separation grooves. Is removed. Therefore, the back electrodes between adjacent photoelectric conversion elements can be reliably separated from each other, so that a high yield can be obtained and output characteristics can be improved.
【００１３】第２発明に係る集積型光起電力装置の製造
方法は、第１発明において、前記背面電極膜を除去する
工程は、前記背面電極膜に対する化学的エッチング処理
と前記背面電極に対する物理的除去処理とを含むことを
特徴とする。[0013] In a method of manufacturing an integrated photovoltaic device according to a second aspect of the present invention, in the first aspect, the step of removing the back electrode film includes a step of chemically etching the back electrode film and a step of physically removing the back electrode film. And a removal process.
【００１４】第２発明にあっては、背面電極膜を除去す
る際に、化学的エッチング処理を行った後に物理的除去
処理を施す。エネルギビーム照射による分離加工の後に
化学的エッチングを施すことにより、分離不良をなくす
ことが期待できる。しかしながら、この化学的エッチン
グによって分離領域の背面電極膜が繊毛状に剥離された
場合、その剥離物によって隣合う光電変換素子同士の短
絡を引き起こす可能性があり、このような場合には出力
特性が著しく劣化してしまうことも考えられる。第２発
明では、化学的エッチング処理とその後の物理的除去処
理とを組み合わせているため、化学的エッチング処理に
て生じた剥離物を物理的除去処理にて確実に除去でき、
上記したような短絡は生じず、高い出力特性が得られ
る。In the second invention, when removing the back electrode film, a physical removal process is performed after the chemical etching process. By performing chemical etching after the separation processing by the energy beam irradiation, it is expected that separation failure can be eliminated. However, when the back electrode film in the separation region is peeled in a cilia shape by this chemical etching, there is a possibility that a short circuit between adjacent photoelectric conversion elements may be caused by the peeled material, and in such a case, the output characteristics are reduced. It is also conceivable that it will be significantly deteriorated. In the second invention, since the chemical etching treatment and the subsequent physical removal treatment are combined, the separated matter generated by the chemical etching treatment can be surely removed by the physical removal treatment,
The above-mentioned short circuit does not occur, and high output characteristics are obtained.
【００１５】第３発明に係る集積型光起電力装置の製造
方法は、第２発明において、前記背面電極膜は酸化亜鉛
膜と金属膜との積層体にて構成されており、前記化学的
エッチング処理におけるエッチャントは酸性水溶液であ
ることを特徴とする。According to a third aspect of the present invention, in the method of manufacturing an integrated photovoltaic device according to the second aspect, the back electrode film is constituted by a laminate of a zinc oxide film and a metal film, and the chemical etching is performed. The etchant in the treatment is an acidic aqueous solution.
【００１６】第３発明にあっては、酸性水溶液（塩酸，
酢酸等）をエッチャントとした化学的エッチングによ
り、加工不良部分の背面電極膜を酸化亜鉛膜から容易に
除去する。In the third invention, an acidic aqueous solution (hydrochloric acid,
The back electrode film in the defective portion is easily removed from the zinc oxide film by chemical etching using acetic acid or the like as an etchant.
【００１７】第４発明に係る集積型光起電力装置の製造
方法は、第２または第３発明において、前記物理的除去
処理は、気体の吹き付けによる除去処理、または、粘着
剤を用いた除去処理であることを特徴とする。According to a fourth aspect of the invention, there is provided a method of manufacturing an integrated photovoltaic device according to the second or third aspect, wherein the physical removal processing is a removal processing by spraying a gas or a removal processing using an adhesive. It is characterized by being.
【００１８】第４発明にあっては、高圧の気体を吹き付
けるか、粘着剤を用いて引き剥がすかにより、化学的エ
ッチング処理で生じた剥離物を容易に除去する。According to the fourth aspect of the present invention, the exfoliated matter generated by the chemical etching treatment is easily removed by blowing high-pressure gas or peeling off using an adhesive.
【００１９】[0019]
【発明の実施の形態】以下、本発明をその実施の形態を
示す図面を参照して具体的に説明する。図１，図２は、
本発明による集積型光起電力装置の製造工程を示す図で
ある。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be specifically described below with reference to the drawings showing the embodiments. FIG. 1 and FIG.
FIG. 3 is a diagram illustrating a manufacturing process of the integrated photovoltaic device according to the present invention.
【００２０】まず、透光性基板としての例えばガラス基
板１上に、ＩＴＯ，ＳｎＯ2 等の透光導電性酸化膜から
なる透光性電極２を、各光電変換素子毎にパターン形成
する（図１（ａ））。この形成処理としては、例えば、
ガラス基板１上の全域にＳｎＯ2 膜を熱ＣＶＤ法にて形
成した後、レーザビームを照射してＳｎＯ2 膜をパター
ニングするか、または、写真蝕刻技術を用いてＳｎＯ2
膜をパターニングする。First, on a glass substrate 1 as a light-transmitting substrate, for example, a light-transmitting electrode 2 made of a light-transmitting conductive oxide film such as ITO or SnO 2 is formed in a pattern for each photoelectric conversion element (FIG. 1 (a)). As this forming process, for example,
After forming the SnO 2 film by thermal CVD method over the entire glass substrate 1, or patterning the SnO 2 film is irradiated with a laser beam, or, SnO 2 by using a photoetching technology
Pattern the film.
【００２１】次いで、透光性電極２上と透光性電極２欠
損部のガラス基板１上との全域に、光電変換層となる半
導体膜１３（膜厚：約５０００Å）、及び、背面電極の
下部層となるＺｎＯ膜１４ａ（膜厚：５００〜２０００
Å）をこの順に積層形成する（図１（ｂ））。Next, a semiconductor film 13 (thickness: about 5000 °) serving as a photoelectric conversion layer and a back electrode are formed over the entire area of the light transmitting electrode 2 and the glass substrate 1 where the light transmitting electrode 2 is defective. ZnO film 14a to be a lower layer (film thickness: 500 to 2000)
Å) are laminated in this order (FIG. 1B).
【００２２】半導体膜１３は、活性層が非晶質Ｓｉ：Ｈ
及び非晶質ＳｉＧｅ：Ｈからなるタンデムのｐｉｎ構造
を内部に有しており、この半導体膜１３を構成する各層
の形成条件を下記表１に示す。The semiconductor film 13 has an active layer of amorphous Si: H
And a tandem pin structure made of amorphous SiGe: H therein. The conditions for forming each layer constituting the semiconductor film 13 are shown in Table 1 below.
【００２３】[0023]
【表１】 [Table 1]
【００２４】また、ＺｎＯ膜１４ａは、Ａｌ2 Ｏ3 ドー
プのＺｎＯをターゲットとしたスパッタリング法によっ
て形成した。この際の形成条件は以下の通りである。 ターゲット：０．３ｗｔ％Ａｌ2 Ｏ3 ドープのＺｎＯ 基板温度：３００℃ ガス流量：Ａｒ４００ｓｃｃ
ｍ，Ｏ2 １０ｓｃｃｍ反応圧力：１Ｐａ ＲＦパワ
ー：１００ｍｗ／ｃｍ2 成膜時間：２０〜４００秒The ZnO film 14a was formed by a sputtering method using ZnO doped with Al 2 O 3 as a target. The formation conditions at this time are as follows. Target: 0.3 wt% Al 2 O 3 doped ZnO Substrate temperature: 300 ° C. Gas flow rate: Ar 400 scc
m, O 2 10 sccm Reaction pressure: 1 Pa RF power: 100 mw / cm 2 Film formation time: 20 to 400 seconds
【００２５】次いで、形成した半導体膜１３及びＺｎＯ
膜１４ａを，レーザビームの照射によりパターニングし
て、各光電変換素子毎の光電変換層３と背面電極４の一
部とを形成する（図１（ｃ））。なお、ＺｎＯ膜１４ａ
を形成した後に半導体膜１３をパターニングする理由
は、ＺｎＯ膜１４ａが介在している場合背面電極４と透
光性電極２との接続部で後述する化学的エッチング工程
時に発生するダメージを防止するためである。Next, the formed semiconductor film 13 and ZnO
The film 14a is patterned by irradiating a laser beam to form a photoelectric conversion layer 3 for each photoelectric conversion element and a part of the back electrode 4 (FIG. 1C). The ZnO film 14a
The reason for patterning the semiconductor film 13 after the formation is that the ZnO film 14a is interposed in order to prevent damage occurring at the connection between the back electrode 4 and the translucent electrode 2 during a later-described chemical etching step. It is.
【００２６】次いで、ＺｎＯ膜１４ａ上と半導体膜１３
及びＺｎＯ膜１４ａ欠損部の透光性電極２上との全域
に、背面電極４の上部層となるＡｌ膜１４ｂ（膜厚：２
０００Å）を積層形成する（図１（ｄ））。Ａｌ膜１４
ｂは、スパッタリング法によって形成した。この際の形
成条件は以下の通りである。 ターゲット：９９．９９％Ａｌ 基板温度：２５０℃ ガス流量：Ａｒ４００ｓｃｃｍ 反応圧力：１Ｐａ ＲＦパワー：１００ｍｗ／ｃｍ2 成膜時間：１５０
秒Next, the ZnO film 14a and the semiconductor film 13
And an Al film 14b (thickness: 2) serving as an upper layer of the back electrode 4 over the entire region of the defect portion of the ZnO film 14a and on the translucent electrode 2.
000 °) (FIG. 1D). Al film 14
b was formed by a sputtering method. The formation conditions at this time are as follows. Target: 99.99% Al Substrate temperature: 250 ° C. Gas flow rate: Ar 400 sccm Reaction pressure: 1 Pa RF power: 100 mw / cm 2 Film formation time: 150
Second
【００２７】次いで、ガラス基板１側からレーザビーム
ＬＢ（図中、矢符で示す）を分離領域に２ライン照射
し、照射領域の半導体膜１３，ＺｎＯ膜１４ａ及びＡｌ
膜１４ｂを除去して２本の分離溝２１ａ，２１ｂを形成
して、各光電変換素子毎の背面電極４を形成する（図２
（ｅ））。照射するレーザビームＬＢは、分離溝２１
ａ，２１ｂの何れを設ける場合にも、エネルギ密度０．
７Ｊ／ｃｍ3 、パルス周波数４ｋＨｚのＮｄ：ＹＡＬレ
ーザを使用した。また、各分離溝２１ａ，２１ｂの幅は
何れも約４０μｍ、両分離溝２１ａ，２１ｂの間隔は１
０〜１００μｍとした。Next, two lines of a laser beam LB (indicated by an arrow in the figure) are irradiated to the separation region from the glass substrate 1 side, and the semiconductor film 13, ZnO film 14a and Al
The film 14b is removed to form two separation grooves 21a and 21b, and the back electrode 4 for each photoelectric conversion element is formed.
(E)). The irradiating laser beam LB is applied to the separation groove 21.
a and 21b are provided, the energy density is set to 0.1.
An Nd: YAL laser with 7 J / cm 3 and a pulse frequency of 4 kHz was used. The width of each of the separation grooves 21a and 21b is about 40 μm, and the distance between the separation grooves 21a and 21b is 1
The thickness was 0 to 100 μm.
【００２８】なお、形成する分離溝の本数を３本以上と
した場合には、背面電極４の分離加工性は向上するが、
発電領域の面積が減少するので、光起電力装置全体とし
ての出力特性は向上しない。従って、その本数は２本が
最適であると言える。When the number of the separation grooves to be formed is three or more, the separation workability of the back electrode 4 is improved,
Since the area of the power generation region is reduced, the output characteristics of the entire photovoltaic device are not improved. Therefore, it can be said that the optimal number is two.
【００２９】次いで、５％の塩酸水溶液中に３０秒間浸
漬させて化学的エッチング処理を施して分離溝２１ａ，
２１ｂ間の背面電極４（ＺｎＯ膜１４ａ／Ａｌ膜１４ｂ
の積層体）をエッチングし、乾燥させた後、５ｋｇ／ｃ
ｍ2 の高圧空気銃にて空気を吹き付けて剥離物を除去す
る（図２（ｆ））。化学的エッチング処理によって、分
離溝２１ａ，２１ｂ間の背面電極４が繊毛状に剥離する
が、本発明では高圧空気の吹き付けによって、この剥離
物を除去できる。Next, the substrate is immersed in a 5% hydrochloric acid aqueous solution for 30 seconds and subjected to a chemical etching treatment, so that the separation grooves 21a,
Back electrode 4 (ZnO film 14a / Al film 14b) between 21b
5 kg / c after etching and drying
Air is sprayed with a high-pressure air gun of m 2 to remove the peeled material (FIG. 2 (f)). The back electrode 4 between the separation grooves 21a and 21b is peeled in a cilia shape by the chemical etching process. In the present invention, the peeled material can be removed by blowing high-pressure air.
【００３０】以上のようにして、透光性電極２（ＳｎＯ
2 ）、光電変換層３（非晶質Ｓｉ：Ｈ及び非晶質ＳｉＧ
ｅ：Ｈのタンデム構成）及び背面電極４（ＺｎＯ／Ａｌ
の積層体）をガラス基板１上にこの順に積層した複数の
光電変換素子５を、隣合う光電変換素子５，５間で一方
の光電変換素子５の透光性電極２と他方の光電変換素子
５の背面電極４とを電気的に導通させた態様にて、直列
接続させた構成を有する集積型光起電力装置を製造す
る。As described above, the translucent electrode 2 (SnO 2
2 ), photoelectric conversion layer 3 (amorphous Si: H and amorphous SiG)
e: H tandem configuration) and back electrode 4 (ZnO / Al
Are stacked on the glass substrate 1 in this order, a plurality of photoelectric conversion elements 5 are arranged between the adjacent photoelectric conversion elements 5, 5, and the translucent electrode 2 of one photoelectric conversion element 5 and the other photoelectric conversion element The integrated photovoltaic device having a configuration in which the back electrode 4 is electrically connected to the back electrode 5 is connected in series.
【００３１】次に、このようにして製造された９７段の
光電変換素子を直列接続させてなる面積２２５０ｃｍ2
の集積型光起電力装置（以下、本発明例という）の平均
出力特性を、ＡＭ１．５，１００ｍＷ／ｃｍ2 のソーラ
シミュレータ光の下で測定した。また、前述した第１従
来例のように１本の溝形成のみにて背面電極の分離を行
った集積型光起電力装置と、前述した第２従来例のよう
に２本の溝形成のみにて背面電極の分離を行った集積型
光起電力装置とを、成膜条件は本発明例と同一にして製
造し、夫々の平均出力特性を上記と同一の条件にて測定
した。また、本発明の比較例として、本発明例と同様に
２本の分離溝を形成した後に化学的エッチング処理のみ
を施して（剥離物の除去処理は行わない）背面電極の分
離を行った集積型光起電力装置を、成膜条件は本発明例
と同一にして製造し、その平均出力特性を上記と同一の
条件にて測定した。Next, an area of 2250 cm 2 formed by connecting 97 stages of photoelectric conversion elements manufactured in this way in series
Of the integrated photovoltaic device (hereinafter, referred to as present invention embodiment) a mean output characteristic of was measured under a solar simulator light AM 1.5, 100 mW / cm 2. In addition, the integrated photovoltaic device in which the back electrode is separated by forming only one groove as in the first conventional example described above, and the two-groove formation only as in the second conventional example described above. An integrated photovoltaic device in which the back electrode was separated was manufactured under the same film forming conditions as those of the present invention, and their average output characteristics were measured under the same conditions as described above. Further, as a comparative example of the present invention, as in the case of the present invention, after forming two separation grooves, only the chemical etching treatment was performed (the separation material was not removed), and the back electrode was separated. A type photovoltaic device was manufactured under the same film forming conditions as those of the present invention, and the average output characteristics were measured under the same conditions as above.
【００３２】このような４種類の集積型光起電力装置
（本発明例，第１従来例，第２従来例，比較例）の出力
特性の測定結果は、以下の通りである。 本発明例：２６．１Ｗ 第１従来例：２０．３
Ｗ 第２従来例：２３．５Ｗ 比較例：１９．２ＷThe measurement results of the output characteristics of the four types of integrated photovoltaic devices (Example of the present invention, First Conventional Example, Second Conventional Example, Comparative Example) are as follows. Example of the present invention: 26.1 W First conventional example: 20.3
W Second conventional example: 23.5 W Comparative example: 19.2 W
【００３３】本発明例では、他の３例よりも出力特性が
優れており、これは、背面電極の分離をより確実に行え
たことに起因する。第２従来例と比較例とを対照して分
かるように、繊毛状の剥離が存在する状態では、化学的
エッチング処理前よりも出力特性は低下することになる
が、その後に剥離物を除去することによって本発明例で
は優れた出力特性を実現できている。In the example of the present invention, the output characteristics are superior to those of the other three examples. This is due to the fact that the separation of the back electrode was more reliably performed. As can be seen from a comparison between the second conventional example and the comparative example, in a state in which cilia-like peeling is present, the output characteristics are lower than before the chemical etching treatment, but thereafter, the peeled material is removed. As a result, in the example of the present invention, excellent output characteristics can be realized.
【００３４】なお、上述した例では、化学的エッチング
処理のエッチャントに塩酸を用いることとしたが、塩酸
に代えて酢酸等の他の酸性水溶液を用いても同様の効果
を奏する。In the above-described example, hydrochloric acid is used as an etchant for the chemical etching process. However, the same effect can be obtained by using another acidic aqueous solution such as acetic acid instead of hydrochloric acid.
【００３５】また、高圧空気を吹き付けて剥離物を除去
するようにしたが、これに代えて、粘着剤を貼り付けて
剥離物を引き剥がして除去するようにしても同様の効果
を奏する。Further, although the separated material is removed by blowing high-pressure air, a similar effect can be obtained by attaching an adhesive and peeling off the separated material instead.
【００３６】[0036]
【発明の効果】以上のように本発明では、背面電極膜を
形成した後に、その分離領域にエネルギビームを照射し
て複数の分離溝を形成し、それらの分離溝に挟まれた領
域の背面電極膜を除去するようにしたので、隣合う光電
変換素子間の背面電極同士を確実に分離でき、歩留りの
向上と出力特性の向上とを実現することができる。As described above, according to the present invention, after the back electrode film is formed, the separation region is irradiated with an energy beam to form a plurality of separation grooves, and the back surface of the region sandwiched between the separation grooves is formed. Since the electrode film is removed, the back electrodes between the adjacent photoelectric conversion elements can be surely separated from each other, so that the yield and the output characteristics can be improved.
【００３７】また、無用な背面電極膜を除去する際に、
化学的エッチング処理とその後の物理的除去処理とを組
み合わせるようにしたので、化学的エッチング処理にて
生じた剥離物を物理的除去処理にて確実に除去でき、隣
合う光電変換素子間での背面電極の分離をより確実に行
うことができる。When removing the unnecessary back electrode film,
Since the chemical etching process and the subsequent physical removal process are combined, the separated material generated by the chemical etching process can be reliably removed by the physical removal process, and the back surface between adjacent photoelectric conversion elements can be removed. Electrodes can be more reliably separated.
【００３８】また、ＺｎＯ／金属の積層体で構成される
背面電極膜に対して、酸性水溶液をエッチャントとした
化学的エッチングを施すようにしたので、加工不良部分
の背面電極膜を容易に除去することができる。Further, since the back electrode film composed of the ZnO / metal laminate is subjected to chemical etching using an acidic aqueous solution as an etchant, the back electrode film in a defective processing portion is easily removed. be able to.
【００３９】更に、高圧の気体を吹き付けるか、粘着剤
を用いて引き剥がすかにより、化学的エッチング処理で
生じた剥離物を除去するようにしたので、剥離物の除去
を簡便かつ容易に行うことができる。Further, since the separated material generated by the chemical etching process is removed by blowing high pressure gas or peeling off with an adhesive, the separated material can be easily and easily removed. Can be.
【図１】本発明による集積型光起電力装置の製造工程を
示す図である。FIG. 1 is a diagram showing a manufacturing process of an integrated photovoltaic device according to the present invention.
【図２】本発明による集積型光起電力装置の製造工程を
示す図である。FIG. 2 is a diagram showing a manufacturing process of the integrated photovoltaic device according to the present invention.
【図３】第１従来例による集積型光起電力装置の製造工
程を示す図である。FIG. 3 is a diagram showing a manufacturing process of the integrated photovoltaic device according to the first conventional example.
【図４】第２従来例による集積型光起電力装置の製造工
程を示す図である。FIG. 4 is a diagram showing a manufacturing process of an integrated photovoltaic device according to a second conventional example.
１ ガラス基板 ２ 透光性電極 ３ 光電変換層 ４ 背面電極 ５ 光電変換素子 １３ 半導体膜 １４ａ ＺｎＯ膜 １４ｂ Ａｌ膜 ２１ａ，２１ｂ 分離溝 Reference Signs List 1 glass substrate 2 translucent electrode 3 photoelectric conversion layer 4 back electrode 5 photoelectric conversion element 13 semiconductor film 14a ZnO film 14b Al film 21a, 21b separation groove
Claims (4)
なる光電変換層及び背面電極をこの順に積層した構成を
有する複数の光電変換素子を、隣合う一方の光電変換素
子の前記透光性電極と他方の光電変換素子の前記背面電
極とを電気的に導通させた態様にて直列接続させてなる
集積型光起電力装置を製造する方法において、前記透光
性基板上に、前記光電変換素子毎に分離された前記透光
性電極及び光電変換層をこの順に形成する工程と、前記
光電変換層の表面を含む前記透光性電極上に、前記背面
電極となる背面電極膜を形成する工程と、該背面電極膜
を前記光電変換素子毎に分離すべき部分にエネルギビー
ムを照射して複数の分離溝を形成する工程と、該複数の
分離溝に挟まれた領域の前記背面電極膜を除去する工程
とを有することを特徴とする集積型光起電力装置の製造
方法。1. A plurality of photoelectric conversion elements each having a configuration in which a light-transmitting electrode, a photoelectric conversion layer made of a semiconductor, and a back electrode are stacked in this order on a light-transmitting substrate, and the light-transmitting electrode of one adjacent photoelectric conversion element is formed. In a method of manufacturing an integrated photovoltaic device which is connected in series in a mode in which a light-emitting electrode and the back electrode of the other photoelectric conversion element are electrically connected, on the light-transmitting substrate, Forming the light-transmissive electrode and the photoelectric conversion layer separated for each photoelectric conversion element in this order, and forming a back electrode film serving as the back electrode on the light-transmitting electrode including the surface of the photoelectric conversion layer. Forming a plurality of separation grooves by irradiating an energy beam to a portion where the back electrode film is to be separated for each of the photoelectric conversion elements; and forming the back surface of a region sandwiched by the plurality of separation grooves. Removing the electrode film. A method for manufacturing an integrated photovoltaic device.
背面電極膜に対する化学的エッチング処理と前記背面電
極に対する物理的除去処理とを含む請求項１記載の集積
型光起電力装置の製造方法。2. The method of manufacturing an integrated photovoltaic device according to claim 1, wherein the step of removing the back electrode film includes a chemical etching process on the back electrode film and a physical removal process on the back electrode. .
の積層体にて構成されており、前記化学的エッチング処
理におけるエッチャントは酸性水溶液である請求項２記
載の集積型光起電力装置の製造方法。3. The integrated photovoltaic device according to claim 2, wherein said back electrode film is constituted by a laminate of a zinc oxide film and a metal film, and an etchant in said chemical etching treatment is an acidic aqueous solution. Manufacturing method.
による除去処理、または、粘着剤を用いた除去処理であ
る請求項２または３記載の集積型光起電力装置の製造方
法。4. The method for manufacturing an integrated photovoltaic device according to claim 2, wherein the physical removal treatment is a removal treatment by blowing gas or a removal treatment using an adhesive.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007287926A (en) * | 2006-04-17 | 2007-11-01 | Kaneka Corp | Integrated thin film photoelectric conversion device, and method of manufacturing same |
| WO2008065970A1 (en) * | 2006-11-30 | 2008-06-05 | Sanyo Electric Co., Ltd. | Solar cell module and solar cell module manufacturing method |
| WO2009139389A1 (en) * | 2008-05-15 | 2009-11-19 | 株式会社アルバック | Thin film solar battery module manufacturing method and thin film solar battery module |
| JP2012151282A (en) * | 2011-01-19 | 2012-08-09 | Mitsubishi Electric Corp | Manufacturing method of thin film solar cell |
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2001
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007287926A (en) * | 2006-04-17 | 2007-11-01 | Kaneka Corp | Integrated thin film photoelectric conversion device, and method of manufacturing same |
| WO2008065970A1 (en) * | 2006-11-30 | 2008-06-05 | Sanyo Electric Co., Ltd. | Solar cell module and solar cell module manufacturing method |
| WO2009139389A1 (en) * | 2008-05-15 | 2009-11-19 | 株式会社アルバック | Thin film solar battery module manufacturing method and thin film solar battery module |
| US8445315B2 (en) | 2008-05-15 | 2013-05-21 | Ulvac, Inc. | Thin-film solar battery module manufacturing method |
| JP5207493B2 (en) * | 2008-05-15 | 2013-06-12 | 株式会社アルバック | Method for manufacturing thin film solar cell module |
| EP2573813A1 (en) * | 2008-09-01 | 2013-03-27 | LG Electronics Inc. | Method of manufacturing a thin film solar cell with unit cells connected in series with a reduced number of patterning steps and corresponding device |
| JP2012151282A (en) * | 2011-01-19 | 2012-08-09 | Mitsubishi Electric Corp | Manufacturing method of thin film solar cell |
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