JP2002217240A - Flip chip mounting structure and wiring method therefor - Google Patents

Flip chip mounting structure and wiring method therefor

Info

Publication number
JP2002217240A
JP2002217240A JP2001012471A JP2001012471A JP2002217240A JP 2002217240 A JP2002217240 A JP 2002217240A JP 2001012471 A JP2001012471 A JP 2001012471A JP 2001012471 A JP2001012471 A JP 2001012471A JP 2002217240 A JP2002217240 A JP 2002217240A
Authority
JP
Japan
Prior art keywords
chip
flip
flip chip
substrate
wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001012471A
Other languages
Japanese (ja)
Inventor
Takashi Aizawa
孝志 相澤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Tohoku Corp
Original Assignee
NEC Tohoku Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Tohoku Corp filed Critical NEC Tohoku Corp
Priority to JP2001012471A priority Critical patent/JP2002217240A/en
Publication of JP2002217240A publication Critical patent/JP2002217240A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/14Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/14Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/17Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/156Material
    • H01L2924/15786Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787Ceramics, e.g. crystalline carbides, nitrides or oxides

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
  • Wire Bonding (AREA)

Abstract

PROBLEM TO BE SOLVED: To make possible the mounting and wiring of a narrow-pitch multi-pin flip chip using a multilayered substrate and having a zigzag pad arrangement. SOLUTION: The heights of connecting members between inner and outer pads of the narrow-pitch multi-pin flip chip having the zigzag pad arrangement and inner and outer pads of a sub-substrate are changed from each other. The mounting and wiring of the flip chip and the connection of a fine-pitch semiconductor chip are made possible by connecting the inner and outer pads of the flip chip to the pads of different layers of the sub-substrate, and making the wiring from each layer of the sub-substrate.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【従来の技術】従来、半導体装置のフリップチップを基
板に実装する構成の実装構造においては、基板上のラン
ド(パッド)及びフリップチップのバンプの構造、及び
これらの配置方法を工夫して高密度実装化を行ってい
る。
2. Description of the Related Art Conventionally, in a mounting structure in which a flip chip of a semiconductor device is mounted on a substrate, a structure of lands (pads) on the substrate and bumps of the flip chip, and a method of arranging these are designed to achieve high density. We are implementing it.

【0002】図9は、ランドとバンプの構造を工夫した
ものであり、特開平11−251363号公報記載のフ
リップチップ実装方法及びフリップチップ実装構造を示
す図である。同公報記載の実装構造では、配線基板23
の上に、半導体チップ22をフェイスダウンに実装する
ため、半導体チップ22の下面のパッド25上に配線基
板23上のランド27よりも軟らかい材質のバンプ26
を設け、前記ランド27を前記バンプ26に埋め込ませ
るようにして、バンプ26とランド27とを電気的に接
続するものである。フリップチップのバンプのピッチと
同等の微細ピッチでの半導体チップの実装を可能として
いる。
FIG. 9 shows a flip chip mounting method and a flip chip mounting structure described in Japanese Patent Application Laid-Open No. 11-251363, in which the structures of lands and bumps are devised. In the mounting structure described in the publication, the wiring board 23
In order to mount the semiconductor chip 22 face down, the bumps 26 made of a material softer than the lands 27 on the wiring board 23 are formed on the pads 25 on the lower surface of the semiconductor chip 22.
And the lands 27 are embedded in the bumps 26 so that the bumps 26 and the lands 27 are electrically connected. The semiconductor chip can be mounted at a fine pitch equivalent to the flip chip bump pitch.

【0003】また、ランド(パッド)とバンプの配置に
よる高密度実装化方法としては、千鳥格子(千鳥)状に
配置したパッドとランドにより狭ピッチ、多ピンのフリ
ップチップの基板への実装を可能とすることが行われて
いる。
As a method of high-density mounting by arranging lands (pads) and bumps, pads and lands arranged in a staggered lattice (staggered) form a narrow pitch, multi-pin flip chip mounted on a substrate. What is possible is being done.

【0004】[0004]

【発明が解決しようとする課題】フリップチップのバン
プのピッチと同等の微細ピッチでの半導体チップを基板
に実装、接続配線する、前述のような従来のランド(パ
ッド)とバンプの実装構造等の工夫のみでは、狭ピッ
チ、多ピンの実装による高密度実装及び配線には限界が
ある。また、千鳥パッド配置の狭ピッチ、多ピンのフリ
ップチップの基板への接続では、狭ピッチ、多ピンの実
装において、基板パッドからの配線が問題となる。これ
は、フリップチップの内側の基板パッドからの配線は狭
ピッチによって表層での外側への配線が困難であること
による。
The above-described conventional land (pad) and bump mounting structure and the like for mounting and connecting and wiring a semiconductor chip on a substrate at a fine pitch equivalent to the pitch of flip chip bumps. There is a limit to high-density mounting and wiring by narrow pitch and multi-pin mounting only with the contrivance. Also, in connection of a narrow pitch, multi-pin flip chip with a staggered pad arrangement to a substrate, wiring from a substrate pad poses a problem in mounting a narrow pitch, multi-pin. This is because the wiring from the substrate pad inside the flip chip is difficult to wire outward on the surface layer due to the narrow pitch.

【0005】このように、従来のフリップチップの実装
構造及び配線方法は、配線の幅とスペースの幅、内側の
パッド数等によって配線ができなくなる場合があり、高
密度実装化の妨げになるものであった。
As described above, in the conventional flip chip mounting structure and wiring method, wiring may not be possible depending on the width of wiring, the width of space, the number of inner pads, and the like, which hinders high-density mounting. Met.

【0006】ところで、多層基板を用いた配線方法とし
て、例えば、特開平10−256712号公報記載のボ
ールグリッドアレイパッケージ形半導体部品の実装構造
が知られているが、同公報記載の実装においては、多層
プリント配線基板に表面パッドを設ける他に、下層配線
に対し円形のビアホールを設け、垂直断面が凹状のビア
ホールパッドを用いることにより下層配線からのパッド
を表面上にまで形成し、全パッドにクリームはんだを印
刷した上で、同一の高さのはんだバンプを形成したボー
ルグリッドアレイパッケージ形半導体部品を搭載し、該
部品のはんだバンプと前記クリームはんだとを炉内で一
体化して接続するものであり、かかる実装構造では、下
層から形成する前記凹状パッドの形状、構造及び形成方
法において製作上極めて困難を伴うものであり、更に同
公報記載のようにボイドの発生等のために凹状パッドの
径等に対する制約があり、凹状パッドの工夫が必須とな
る等の点でも問題がある。
As a wiring method using a multilayer substrate, for example, a mounting structure of a ball grid array package type semiconductor component disclosed in Japanese Patent Application Laid-Open No. H10-256712 is known. In addition to providing surface pads on the multilayer printed wiring board, a circular via hole is provided for the lower layer wiring, and a pad from the lower layer wiring is formed on the surface by using a via hole pad having a concave vertical cross section, and cream is applied to all the pads. After solder is printed, a ball grid array package type semiconductor component having solder bumps of the same height formed thereon is mounted, and the solder bumps of the component and the cream solder are integrated and connected in a furnace. In such a mounting structure, the shape, structure, and forming method of the concave pad formed from the lower layer are difficult to manufacture. Are those with difficulty Te fit, further there are constraints on the diameter of the concave pad for generation of voids as described in the publication, devised concave pad is a problem in terms of such essential.

【0007】(目的)本発明の目的は、狭ピッチ、多ピ
ンのフリップチップの実装と配線を可能とするフリップ
チップ実装構造及び配線方法を提供することにある。
(Object) It is an object of the present invention to provide a flip-chip mounting structure and a wiring method capable of mounting and wiring a narrow pitch, multi-pin flip chip.

【0008】本発明の他の目的は、多層基板を用いた千
鳥パッド配置の狭ピッチ、多ピンのフリップチップの実
装と配線を可能とするフリップチップ実装構造及び配線
方法を提供することにある。
Another object of the present invention is to provide a flip-chip mounting structure and a wiring method which enable mounting and wiring of narrow-pitch, multi-pin flip chips with a staggered pad arrangement using a multilayer substrate.

【0009】[0009]

【課題を解決するための手段】本発明によるフリップチ
ップ実装構造及び配線方法は、千鳥パッド配置の狭ピッ
チ、多ピンの半導体装置のフリップチップをフリップチ
ップ搭載用サブ基板(以下、サブ基板)の裏面にリード
を使用せずに実装するフリップチップ実装において、フ
リップチップの内側と外側のパッドとサブ基板の内側と
外側のパッドとの接続材の高さを変える構造とする。サ
ブ基板の異なる層のパッドに接続し各層から配線をする
ことにより、千鳥パッド配置の狭ピッチ、多ピンのフリ
ップチップの実装と配線を可能とし、微細ピッチの半導
体チップの接続を可能とする。
SUMMARY OF THE INVENTION A flip chip mounting structure and wiring method according to the present invention are directed to a method for mounting a flip chip of a narrow pitch, multi-pin semiconductor device with a staggered pad arrangement on a flip chip mounting sub-substrate (hereinafter, sub-substrate). In flip-chip mounting in which leads are not used on the back surface, a structure is used in which the height of a connecting material between pads inside and outside the flip chip and pads inside and outside the sub-substrate is changed. By connecting to the pads of different layers of the sub-substrate and performing wiring from each layer, mounting and wiring of a narrow pitch, multi-pin flip chip in a staggered pad arrangement and connection of a fine pitch semiconductor chip are enabled.

【0010】本発明のフリップチップ実装構造は、多層
配線基板(例えば、図2のa)の上にフリップチップ
(例えば、図2のb)をフェースダウンに実装、配線す
るフリップチップ実装構造において、前記多層配線基板
の最上層(例えば、図2の13)の表面上及び上層の開
口により露出した下層(例えば、図2の14)の表面上
に設けたパッド(例えば、図2の8)と、前記フリップ
チップの前記多層配線基板のパッドに対向する位置及び
距離に応じた高さの電気的な接続材料でなるバンプ(例
えば、図2の9)とにより、前記フリップチップと前記
多層配線基板がフェースダウンにより実装、接続された
ことを特徴とする。前記多層配線基板のパッド及びフリ
ップチップのバンプはフリップチップの周辺部に互いに
対向して千鳥状に配置(例えば、図1の7、8)され、
前記多層配線基板の内側のパッドは下層表面上に設けた
ことを特徴とする。
The flip-chip mounting structure of the present invention is a flip-chip mounting structure for mounting and wiring a flip chip (for example, FIG. 2B) face down on a multilayer wiring board (for example, FIG. 2A). A pad (for example, 8 in FIG. 2) provided on the surface of the uppermost layer (for example, 13 in FIG. 2) of the multilayer wiring board and on the surface of a lower layer (for example, 14 in FIG. 2) exposed by an opening in the upper layer; The flip chip and the multilayer wiring board are formed by bumps (for example, 9 in FIG. 2) made of an electrical connection material having a height corresponding to a position and a distance of the flip chip facing the pad of the multilayer wiring board. Are mounted and connected face down. The pads of the multilayer wiring board and the bumps of the flip chip are arranged in a staggered manner (for example, 7 and 8 in FIG. 1) on the periphery of the flip chip so as to face each other.
The pad inside the multilayer wiring board is provided on a lower layer surface.

【0011】また、前記多層配線基板における下層表面
を露出するための上層の開口は、千鳥状に配置された内
側の複数のパッドを含む単一の開口(例えば、図2の
3)でなることを特徴とする。
The upper opening for exposing the lower surface of the multilayer wiring board is a single opening (for example, 3 in FIG. 2) including a plurality of inner pads arranged in a staggered manner. It is characterized by.

【0012】更に、パッドに接続された配線の層間の接
続はスルホール(例えば、図2の12)を介して行うこ
とを特徴とする。
Further, the connection between the layers of the wiring connected to the pads is made through through holes (for example, 12 in FIG. 2).

【0013】本発明のフリップチップ配線方法は、多層
配線基板の上にフリップチップをフェースダウンにより
実装、配線するフリップチップ配線方法において、前記
多層配線基板の最上層の表面上及び上層の開口により露
出した下層の表面上にそれぞれパッドを設け、前記多層
配線基板に実装するフリップチップに前記多層配線基板
の前記パッドに対向する位置及び距離に応じた高さの電
気的な接続材料でなるバンプを設け、前記フリップチッ
プを前記多層配線基板にフェースダウンにより実装、接
続することを特徴とする。
The flip-chip wiring method of the present invention is a flip-chip wiring method for mounting and wiring a flip chip on a multilayer wiring board face-down, wherein the flip chip is exposed on the uppermost surface of the multilayer wiring board and through an opening in the upper layer. Pads are provided on the surface of the lower layer, and bumps made of an electrical connection material having a height corresponding to a position and a distance facing the pads of the multilayer wiring board are provided on a flip chip mounted on the multilayer wiring board. The flip chip is mounted and connected to the multilayer wiring board face down.

【0014】また、前記多層配線基板のパッド及びフリ
ップチップのバンプはフリップチップの周辺部に互いに
対向して千鳥状に配置され、前記多層配線基板の内側の
パッドは下層表面上に設けられたことを特徴とする。パ
ッドに接続された配線の層間の接続はスルホールを介し
て行うことを特徴とする。
The pads of the multilayer wiring board and the bumps of the flip chip are arranged in a zigzag pattern facing each other around the periphery of the flip chip, and the pad inside the multilayer wiring board is provided on the lower layer surface. It is characterized by. The connection between the layers of the wiring connected to the pad is made through a through hole.

【0015】[0015]

【発明の実施の形態】(構成の説明)次に、本発明のフ
リップチップの実装構造及び配線方法の実施の形態につ
いて図を参照して説明する。
DESCRIPTION OF THE PREFERRED EMBODIMENTS (Description of Configuration) Next, an embodiment of a flip chip mounting structure and a wiring method according to the present invention will be described with reference to the drawings.

【0016】図1は、本発明の一実施の形態のフリップ
チップの実装構造を示す平面図であり、図2は、図1に
示すフリップチップの実装構造のA−A’面の断面図で
ある。
FIG. 1 is a plan view showing a flip-chip mounting structure according to an embodiment of the present invention, and FIG. 2 is a cross-sectional view taken along the line AA 'of the flip-chip mounting structure shown in FIG. is there.

【0017】本実施の形態においては、基板aと、該基
板a上に実装される半導体装置のフリップチップbとか
ら構成されており、前記基板aは、特に図2に示すよう
に、サブ基板2上に形成された基板内層14とその上側
のキャビティ3を形成する開口を有する基板表層13と
からなる多層構造を備えている。
In this embodiment, the semiconductor device comprises a substrate a and a flip chip b of a semiconductor device mounted on the substrate a. The substrate a is, as shown in FIG. 2 has a multilayer structure composed of a substrate inner layer 14 formed on the substrate 2 and a substrate surface layer 13 having an opening for forming the cavity 3 above the substrate inner layer 14.

【0018】そして、基板aの前記基板内層14には、
内層上面の配線と該配線からスルーホール12により基
板内層14を貫通するサブ基板側への配線とを有し、
前記基板表層13には、外層上面の配線と該配線からス
ルーホール12により基板表層13及び基板内層14を
貫通するサブ基板側への配線とを有している。また、
前記基板表層13には前記配線上の外側基板パッド7
が、前記基板内層14には前記キャビティ3により開口
している箇所の前記配線上に内側基板パッド8がそれぞ
れ形成されている。
And, in the substrate inner layer 14 of the substrate a,
Having wiring on the upper surface of the inner layer and wiring from the wiring to the sub-substrate side that penetrates through the inner layer of the substrate 14 through the through hole
The substrate surface layer 13 has a wiring on the upper surface of the outer layer and a wiring from the wiring to the sub-substrate side through the substrate surface layer 13 and the substrate inner layer 14 through the through hole 12. Also,
The outer substrate pad 7 on the wiring is provided on the substrate surface layer 13.
However, an inner substrate pad 8 is formed on the wiring at a location opened by the cavity 3 in the substrate inner layer 14.

【0019】一方、フリップチップbは、前記基板aの
前記外側基板パッド7及び前記内側基板パッド8と対応
する位置にそれぞれ外側チップパッド5及び内側チップ
パッド6が形成され、それぞれのチップパッドには厚さ
の異なる接続材9が形成された半導体チップ1でなる。
つまり、前記外側基板パッド7に対応するパッドの接続
材9は厚みが小さく、前記内側基板パッド8と対応する
パッドの接続材9は厚みが大きく選定されている。
On the other hand, the flip chip b has outer chip pads 5 and inner chip pads 6 formed at positions corresponding to the outer board pads 7 and the inner board pads 8 of the board a, respectively. It is a semiconductor chip 1 on which connecting members 9 having different thicknesses are formed.
That is, the connecting material 9 of the pad corresponding to the outer substrate pad 7 is selected to have a small thickness, and the connecting material 9 of the pad corresponding to the inner substrate pad 8 is selected to have a large thickness.

【0020】本実施の形態の実装においては、基板a上
に半導体装置のフリップチップbをフェースダウンに搭
載し、フリップチップb上に形成されているチップパッ
ド5、6とサブ基板2上の基板各層に形成される基板パ
ッド7、8とを接続材9で電気的に接続しフリップチッ
プ実装を行う。また、基板aの上面とフリップチップb
の下部との間を樹脂4で封止しフリップチップb及びそ
の接続箇所を保護する。
In this embodiment, the flip chip b of the semiconductor device is mounted face down on the substrate a, and the chip pads 5 and 6 formed on the flip chip b and the substrate on the sub-substrate 2 are mounted. Flip chip mounting is performed by electrically connecting the substrate pads 7 and 8 formed on each layer with the connecting material 9. Also, the upper surface of the substrate a and the flip chip b
Is sealed with a resin 4 to protect the flip chip b and its connection.

【0021】本実施の形態では、上述のようにフリップ
チップbと基板aとの接続は、外側チップパッド5は外
側基板パッド7、内側チップパッド6はキャビティ3部
に形成される内側基板パッド8に、それぞれ接続材9で
接続される。ここで、基板aはフリップチップ実装する
ためにキャビティ構造を有する樹脂基板等を用いた多層
基板で構成することができ、サブ基板2も同様に多層基
板とすることができる。
In this embodiment, as described above, the connection between the flip chip b and the substrate a is made by the outer chip pad 5 being the outer substrate pad 7 and the inner chip pad 6 being the inner substrate pad 8 formed in the cavity 3. Are connected by connecting members 9. Here, the substrate a can be constituted by a multilayer substrate using a resin substrate or the like having a cavity structure for flip-chip mounting, and the sub-substrate 2 can also be a multilayer substrate.

【0022】また、接続材9には熱硬化型金属材料や半
田材料等を使用することが可能であり、外側のパッド間
の接続材と内側のパッド間の接続材の厚さ(高さ)を変
えることでフリップチップbとサブ基板2との間を電気
的に接続する。サブ基板2側への基板パッド7、8から
の配線の方法は、外側基板パッド7からは基板表層13
の配線で行い、内側基板パッド8からは基板内層14
の配線で行う。このことによりスルーホール12を介
して各層間の接続をも可能とする。 (他の実施の形態1)以上の実施の形態では、図1、図
2から分かるように基板内層14の上面の配線及びスル
ーホールを介するサブ基板2側への配線をフリップチッ
プの外側に設けたものであるが、本発明のスルーホール
を介する多層基板の層間配線はフリップチップの外側及
び内側のいずれの箇所からも行うことが可能である。
Further, a thermosetting metal material, a solder material, or the like can be used for the connecting material 9. The thickness (height) of the connecting material between the outer pads and the connecting material between the inner pads is possible. Is changed to electrically connect the flip chip b and the sub-board 2. The method of wiring from the substrate pads 7 and 8 to the sub-substrate 2 side is as follows.
From the inner substrate pad 8 to the substrate inner layer 14.
Wiring. This enables connection between the layers via the through holes 12. (Other Embodiment 1) In the above embodiment, as can be seen from FIGS. 1 and 2, the wiring on the upper surface of the substrate inner layer 14 and the wiring to the sub-substrate 2 via the through hole are provided outside the flip chip. However, the interlayer wiring of the multi-layer substrate through the through hole according to the present invention can be performed from both the outside and the inside of the flip chip.

【0023】図3は、フリップチップの下部においてス
ルーホールを形成してサブ基板側への配線を設けた本発
明の他の実施の形態を示す平面図であり、図4は、図3
のB−B’面を示す断面図である。
FIG. 3 is a plan view showing another embodiment of the present invention in which a through hole is formed below the flip chip and wiring is provided on the sub-substrate side. FIG.
FIG. 3 is a cross-sectional view showing a BB ′ plane of FIG.

【0024】図3、図4を参照すると、内側基板パッド
8からの基板内層14での配線に関して、配線11に
加えてフリップチップbの下部での配線15を併用す
るようにしたものであり、さらに多ピンのフリップチッ
プの実装及びパッドからの配線が可能となり、高密度の
実装化が可能である。 (他の実施の形態2)図5は本発明の他の実施の形態を
示す平面図であり、図6は、図5のC−C’面の断面図
である。
Referring to FIG. 3 and FIG. 4, wirings from the inner substrate pad 8 to the inner layer 14 of the substrate are used in combination with the wiring 11 and the wiring 15 below the flip chip b. Furthermore, mounting of a multi-pin flip chip and wiring from pads are possible, and high-density mounting is possible. (Other Embodiment 2) FIG. 5 is a plan view showing another embodiment of the present invention, and FIG. 6 is a cross-sectional view taken along the line CC 'of FIG.

【0025】図5、図6を参照すると、本実施の形態で
は、基板外層19に設ける開口がフリップチップの個々
の内側チップパッド16の接続材18に対応する大きさ
で個別に設けられ、又は複数の内側チップパッド16の
接続材18に対応する幅の単一の溝状の開口として設け
られた構造を有している。
Referring to FIGS. 5 and 6, in this embodiment, the openings provided in the outer layer 19 of the substrate are individually provided in a size corresponding to the connecting members 18 of the respective inner chip pads 16 of the flip chip. It has a structure provided as a single groove-shaped opening having a width corresponding to the connection material 18 of the plurality of inner chip pads 16.

【0026】本実施の形態の多層基板は、フリップチッ
プの下部にも基板外層19があり、更に、フリップチッ
プのチップパッド16の接続材18が基板外層19に埋
め込むような方法で基板内層20のパッド7と固着され
電気的に接続されるので、接続の強度が増すとともに、
基板内層20及び基板外層19からなるサブ基板の製造
が容易となる。
The multilayer substrate of the present embodiment has an outer substrate layer 19 also below the flip chip, and furthermore, a method of embedding the inner layer 20 of the substrate in such a manner that the connecting material 18 of the chip pad 16 of the flip chip is embedded in the outer layer 19 of the substrate. Since it is fixed and electrically connected to the pad 7, the strength of the connection is increased,
It becomes easy to manufacture a sub-substrate composed of the substrate inner layer 20 and the substrate outer layer 19.

【0027】(他の実施の形態3)以上の実施の形態で
は、多層基板として2層の例で説明したが、本発明は3
層以上の配線層を有する多層基板に適用可能であり、こ
の場合一層の高密度実装化が可能となる。
(Embodiment 3) In the above embodiments, an example was described in which the multilayer substrate was a two-layer substrate.
The present invention can be applied to a multilayer substrate having at least two wiring layers, and in this case, a higher-density mounting can be achieved.

【0028】図7は、かかる他の実施の形態を示す平面
図であり、図8は、図7のD−D’面の断面図である。
多層基板側は3層構造に構成されており、フリップチッ
プのチップパッドは3列構成とし、1列目は最上層の配
線のパッドに、2列目は2層目の配線のパッドに、3列
目の配線は最下層の配線のパッドにそれぞれ接続した構
成を備えている。本実施の形態において、3層目の配線
はフリップチップの下部からスルーホールを介してサブ
基板方向に配線されている。
FIG. 7 is a plan view showing such another embodiment, and FIG. 8 is a sectional view taken along the line DD 'of FIG.
The multilayer substrate side is configured in a three-layer structure, the flip-chip chip pads are configured in three rows, the first row is used for the uppermost layer wiring pads, the second row is used for the second layer wiring pads, and The wiring in the column has a configuration connected to the pads of the wiring in the lowermost layer. In the present embodiment, the wiring of the third layer is wired from the lower part of the flip chip toward the sub-substrate via a through hole.

【0029】本実施の形態において、第2及び第3の実
施の形態に示すそれぞれスルーホールの配置及び最上層
及び中間層に対する開口の態様を適用することができる
ことは云うまでもない。
In this embodiment, it goes without saying that the arrangement of through holes and the forms of openings for the uppermost layer and the intermediate layer shown in the second and third embodiments can be applied.

【0030】更に以上の実施の形態において、基板の材
質にセラミック基板を使用することにより放熱性が優
れ、フレキシブル基板を使用することにより多様な実装
形態への対応が可能となる。
Further, in the above embodiments, the use of a ceramic substrate as the material of the substrate results in excellent heat dissipation, and the use of a flexible substrate makes it possible to cope with various mounting forms.

【0031】[0031]

【発明の効果】本発明のフリップチップ実装構造及び配
線方法によれば、多層基板下層のパットに対応する箇所
の上層に開口を設け、フリップチップには高さの異なる
接続材を使用したバンプを形成してフェースダウンによ
り接続することにより、フリップチップの内側チップパ
ッドと、多層基板の下層の基板上面のパッドとの接続を
容易に実現することを可能としており、フリップチップ
の内側チップパッドとフリップチップの外側の配線との
接続が可能となり、従来はできなかった千鳥パッド配置
の狭ピッチ、多ピンのフリップチップの実装及び配線が
できるため高密度実装化が可能となる。
According to the flip-chip mounting structure and the wiring method of the present invention, an opening is provided in an upper layer at a position corresponding to a pad in a lower layer of a multilayer substrate, and a bump using a connecting material having a different height is formed on the flip chip. By forming and connecting by face-down, it is possible to easily realize the connection between the inner chip pad of the flip chip and the pad on the upper surface of the lower substrate of the multilayer substrate. Connection with the wiring outside the chip becomes possible, and mounting and wiring of a narrow pitch, multi-pin flip chip with a staggered pad arrangement, which could not be performed conventionally, can be performed, so that high density mounting is possible.

【図面の簡単な説明】[Brief description of the drawings]

【図1】 本発明のフリップチップの実装構造及び配線
方法の実施の形態を示す図である。
FIG. 1 is a diagram showing an embodiment of a flip chip mounting structure and a wiring method according to the present invention.

【図2】 図1に示すフリップチップの実装構造のA−
A’面の断面図である。
FIG. 2 is a cross-sectional view of the flip-chip mounting structure shown in FIG.
It is sectional drawing of A 'side.

【図3】 本発明のフリップチップの実装構造及び配線
方法の他の実施の形態を示す図である。
FIG. 3 is a diagram showing another embodiment of a flip chip mounting structure and a wiring method according to the present invention.

【図4】 図3に示すフリップチップの実装構造のB−
B’面の断面図である。
FIG. 4 is a cross-sectional view of the flip-chip mounting structure shown in FIG.
It is sectional drawing of B 'side.

【図5】 本発明のフリップチップの実装構造及び配線
方法の更に他の実施の形態を示す図である。
FIG. 5 is a view showing still another embodiment of a flip chip mounting structure and a wiring method according to the present invention.

【図6】 図5に示すフリップチップの実装構造のC−
C’面の断面図である。
FIG. 6 is a cross-sectional view of the flip-chip mounting structure shown in FIG.
It is sectional drawing of C 'plane.

【図7】 本発明のフリップチップの実装構造及び配線
方法の更に他の実施の形態を示す図である。
FIG. 7 is a diagram showing still another embodiment of a flip chip mounting structure and a wiring method according to the present invention.

【図8】 図7に示すフリップチップの実装構造のD−
D’面の断面図である。
FIG. 8 is a cross-sectional view of the flip-chip mounting structure shown in FIG.
It is sectional drawing of the D 'plane.

【図9】 従来のフリップチップ実装構造を示す図であ
る。
FIG. 9 is a diagram showing a conventional flip chip mounting structure.

【符号の説明】[Explanation of symbols]

1 半導体チップ 2 サブ基板 3 キャビティ 4、24 樹脂 5 外側チップパッド 6、16 内側チップパッド 7 外側基板パッド 8、17 内側基板パッド 9、18 接続材 10、11 配線 12 スルーホール 13、19 基板表層 14、20 基板内層 22 半導体チップ 23 配線基板 25 パッド 27 ランド DESCRIPTION OF SYMBOLS 1 Semiconductor chip 2 Sub-substrate 3 Cavity 4, 24 Resin 5 Outer chip pad 6, 16 Inner chip pad 7 Outer board pad 8, 17 Inner board pad 9, 18 Connecting material 10, 11 Wiring 12 Through hole 13, 19 Substrate surface layer 14 , 20 substrate inner layer 22 semiconductor chip 23 wiring substrate 25 pad 27 land

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 FI テーマコート゛(参考) H05K 3/46 H01L 21/92 602Q 23/12 N ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (Reference) H05K 3/46 H01L 21/92 602Q 23/12 N

Claims (7)

【特許請求の範囲】[Claims] 【請求項1】 多層配線基板の上にフリップチップをフ
ェースダウンに実装、配線するフリップチップ実装構造
において、 前記多層配線基板の最上層の表面上及び上層の開口によ
り露出した下層の表面上に設けたパッドと、前記フリッ
プチップの前記多層配線基板のパッドに対向する位置及
び距離に応じた高さの電気的な接続材料でなるバンプと
により、前記フリップチップと前記多層配線基板がフェ
ースダウンにより実装、接続されたことを特徴とするフ
リップチップ実装構造。
1. A flip chip mounting structure for mounting and wiring a flip chip face down on a multilayer wiring board, wherein the flip chip is provided on a surface of an uppermost layer of the multilayer wiring board and on a surface of a lower layer exposed through an opening in the upper layer. The flip chip and the multilayer wiring board are mounted face-down by a pad which is formed and a bump made of an electrical connection material having a height corresponding to a position and a distance of the flip chip facing the pad of the multilayer wiring board. And a flip-chip mounting structure.
【請求項2】 前記多層配線基板のパッド及びフリップ
チップのバンプはフリップチップの周辺部に互いに対向
して千鳥状に配置され、前記多層配線基板の内側のパッ
ドは下層表面上に設けたことを特徴とする請求項1記載
のフリップチップ実装構造。
2. The method according to claim 1, wherein the pads of the multilayer wiring board and the bumps of the flip chip are arranged in a staggered manner on the periphery of the flip chip so as to face each other, and the pad inside the multilayer wiring board is provided on a lower layer surface. The flip-chip mounting structure according to claim 1, wherein:
【請求項3】 前記多層配線基板における下層表面を露
出するための上層の開口は、千鳥状に配置された内側の
複数のパッドを含む単一の開口でなることを特徴とする
請求項2記載のフリップチップ実装構造。
3. The multi-layer wiring board according to claim 2, wherein the upper layer opening for exposing a lower layer surface is a single opening including a plurality of inner pads arranged in a staggered manner. Flip chip mounting structure.
【請求項4】 パッドに接続された配線の層間の接続は
スルホールを介して行うことを特徴とする請求項1、2
又は3記載のフリップチップ実装構造。
4. The method according to claim 1, wherein the connection between the layers of the wiring connected to the pad is made through a through hole.
Or the flip-chip mounting structure according to 3.
【請求項5】 多層配線基板の上にフリップチップをフ
ェースダウンにより実装、配線するフリップチップ配線
方法において、 前記多層配線基板の最上層の表面上及び上層の開口によ
り露出した下層の表面上にそれぞれパッドを設け、前記
多層配線基板に実装するフリップチップに前記多層配線
基板の前記パッドに対向する位置及び距離に応じた高さ
の電気的な接続材料でなるバンプを設け、前記フリップ
チップを前記多層配線基板にフェースダウンにより実
装、接続することを特徴とするフリップチップ配線方
法。
5. A flip-chip wiring method for mounting and wiring a flip chip face-down on a multilayer wiring board, wherein the flip-chip wiring method comprises: A pad is provided, and a flip chip mounted on the multilayer wiring board is provided with a bump made of an electrical connection material having a height corresponding to a position and a distance of the multilayer wiring board facing the pad, and the flip chip is mounted on the multilayer chip. A flip-chip wiring method, which is mounted and connected to a wiring board by face-down.
【請求項6】 前記多層配線基板のパッド及びフリップ
チップのバンプはフリップチップの周辺部に互いに対向
して千鳥状に配置され、前記多層配線基板の内側のパッ
ドは下層表面上に設けられたことを特徴とする請求項5
記載のフリップチップ配線方法。
6. A pad of the multilayer wiring board and bumps of the flip chip are arranged in a zigzag pattern on the periphery of the flip chip so as to face each other, and a pad inside the multilayer wiring board is provided on a lower layer surface. 6. The method according to claim 5, wherein
The described flip-chip wiring method.
【請求項7】 パッドに接続された配線の層間の接続は
スルホールを介して行うことを特徴とする請求項6記載
のフリップチップ配線方法。
7. The flip-chip wiring method according to claim 6, wherein the connection between the layers of the wiring connected to the pad is made through a through hole.
JP2001012471A 2001-01-19 2001-01-19 Flip chip mounting structure and wiring method therefor Pending JP2002217240A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001012471A JP2002217240A (en) 2001-01-19 2001-01-19 Flip chip mounting structure and wiring method therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001012471A JP2002217240A (en) 2001-01-19 2001-01-19 Flip chip mounting structure and wiring method therefor

Publications (1)

Publication Number Publication Date
JP2002217240A true JP2002217240A (en) 2002-08-02

Family

ID=18879472

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JP2002217240A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007329451A (en) * 2006-06-07 2007-12-20 Samsung Sdi Co Ltd Chip and planar display device equipped therewith
KR100802868B1 (en) * 2005-01-25 2008-02-13 세이코 엡슨 가부시키가이샤 Device package structure, device packaging method, droplet ejection head, connector, and semiconductor device
JP2011181642A (en) * 2010-03-01 2011-09-15 Shinko Electric Ind Co Ltd Wiring board
JP2015149325A (en) * 2014-02-05 2015-08-20 新光電気工業株式会社 Wiring board, semiconductor device, method of manufacturing wiring board, and method of manufacturing semiconductor device
CN116314055A (en) * 2023-02-10 2023-06-23 宜确半导体(苏州)有限公司 Semiconductor packaging structure and radio frequency front end module product

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100802868B1 (en) * 2005-01-25 2008-02-13 세이코 엡슨 가부시키가이샤 Device package structure, device packaging method, droplet ejection head, connector, and semiconductor device
US7595562B2 (en) 2005-01-25 2009-09-29 Seiko Epson Corporation Device package structure, device packaging method, droplet ejection head, connector, and semiconductor device
US7944060B2 (en) 2005-01-25 2011-05-17 Seiko Epson Corporation Device package structure, device packaging method, droplet ejection head, connector, and semiconductor device
JP2007329451A (en) * 2006-06-07 2007-12-20 Samsung Sdi Co Ltd Chip and planar display device equipped therewith
JP2011181642A (en) * 2010-03-01 2011-09-15 Shinko Electric Ind Co Ltd Wiring board
JP2015149325A (en) * 2014-02-05 2015-08-20 新光電気工業株式会社 Wiring board, semiconductor device, method of manufacturing wiring board, and method of manufacturing semiconductor device
CN116314055A (en) * 2023-02-10 2023-06-23 宜确半导体(苏州)有限公司 Semiconductor packaging structure and radio frequency front end module product
CN116314055B (en) * 2023-02-10 2024-01-05 宜确半导体(苏州)有限公司 Semiconductor packaging structure and radio frequency front end module product

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