JP2002212763A - Method for manufacturing etching parts - Google Patents

Method for manufacturing etching parts

Info

Publication number
JP2002212763A
JP2002212763A JP2001012876A JP2001012876A JP2002212763A JP 2002212763 A JP2002212763 A JP 2002212763A JP 2001012876 A JP2001012876 A JP 2001012876A JP 2001012876 A JP2001012876 A JP 2001012876A JP 2002212763 A JP2002212763 A JP 2002212763A
Authority
JP
Japan
Prior art keywords
etching
surface roughness
potential
manufacturing
etched
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001012876A
Other languages
Japanese (ja)
Other versions
JP3988391B2 (en
Inventor
Satoshi Tanaka
聡 田中
Ryuji Ueda
龍二 上田
Shukuji Asakura
祝治 朝倉
Hidemoto Nakagawa
英元 中川
Giichi Miyata
義一 宮田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toppan Inc
Original Assignee
Toppan Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toppan Printing Co Ltd filed Critical Toppan Printing Co Ltd
Priority to JP2001012876A priority Critical patent/JP3988391B2/en
Publication of JP2002212763A publication Critical patent/JP2002212763A/en
Application granted granted Critical
Publication of JP3988391B2 publication Critical patent/JP3988391B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • ing And Chemical Polishing (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a method for manufacturing etching parts which is capable of controlling the surface roughness in etching to a specified value or below in etching a metallic base material consisting of an iron-nickel alloy. SOLUTION: The method for manufacturing the etching parts by etching the metallic base material consisting of the iron-nickel alloy containing 30 to 50 wt.% nickel by using a ferric chloride solution comprises etching the metallic base material in the state that the potential of the metallic base material in etching exceeds 150 mV.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明はテレビ、コンピュー
ター等のディスプレーのブラウン管中に用いられるシャ
ドウマスクや、リードフレーム等のエッチング部品の製
造方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a shadow mask used in a cathode ray tube of a display such as a television and a computer, and an etching part such as a lead frame.

【0002】[0002]

【従来の技術】近年、リードフレームの微細化やシャド
ウマスクの高精度高精細化、大画面化が進み、リードフ
レームにおいては高い引っ張り強度を持つことにより微
細加工のための薄板化に対応可能で、熱膨張係数がシリ
コンチップのそれとほぼ同じであるためパッケージクラ
ックの発生を抑制できるFe−Ni合金(Ni42重量
%)が広く利用されている。また、シャドウマスクの金
属基材としては従来主に使用されてきた純鉄(アルミキ
ルド鋼)に替わり、室温での熱膨張係数が純鉄(アルミ
キルド鋼)に比べ極めて低く、シャドウマスクの電子ビ
ーム透過孔の位置精度を温度に依存せず正確に保つこと
のできるFe−36重量%Ni合金(いわゆるアンバー
合金)をはじめとする低熱膨張特性を有するFe−Ni
系合金が使用されている。
2. Description of the Related Art In recent years, lead frames have been miniaturized, shadow masks have been refined with high precision and definition, and screens have been enlarged. The lead frames have a high tensile strength and can be made thinner for fine processing. Since the thermal expansion coefficient is almost the same as that of a silicon chip, an Fe—Ni alloy (Ni 42% by weight) that can suppress the occurrence of a package crack is widely used. Also, instead of pure iron (aluminum-killed steel), which has been mainly used in the past, the coefficient of thermal expansion at room temperature is much lower than that of pure iron (aluminum-killed steel). Fe-Ni having low thermal expansion characteristics such as an Fe-36% by weight Ni alloy (so-called invar alloy) capable of accurately maintaining the position accuracy of the holes without depending on the temperature.
A series alloy is used.

【0003】リードフレームやシャドウマスク等のエッ
チング部品の製造方法としてはウエットエッチング加工
が一般的である。エッチング液としては、その加工性と
コストから塩化第二鉄液が主に使用されている。リード
フレームではモールド樹脂封止後のアウターリード部の
モールド樹脂除去を簡便にする目的で、またシャドウマ
スクにおいては製品内の電子線透過率を均一にする目的
でエッチング面の表面粗さを低くし、平滑なエッチング
面を形成することが重要である。近年の高精細シャドウ
マスクではその寸法精度要求が貫通孔部分で±1μm程
度であり、エッチング面粗さがRaで1μm以上となっ
てしまうとそれだけで寸法精度の要求を満たすことがで
きなくなってしまう。
[0003] As a method of manufacturing an etching component such as a lead frame or a shadow mask, a wet etching process is generally used. As an etchant, a ferric chloride solution is mainly used because of its workability and cost. In the lead frame, the surface roughness of the etched surface is reduced for the purpose of simplifying the removal of the mold resin from the outer leads after sealing the mold resin, and for the shadow mask in order to make the electron beam transmittance in the product uniform. It is important to form a smooth etched surface. In recent high-definition shadow masks, the dimensional accuracy requirement is about ± 1 μm in the through-hole portion, and if the etching surface roughness is 1 μm or more in Ra, the dimensional accuracy requirement alone cannot be satisfied. .

【0004】[0004]

【発明が解決しようとする課題】しかし、エッチング面
粗さは、エッチング液の温度、比重、遊離塩酸濃度、ニ
ッケル含有量、酸化還元電位(ORP)等、種々の因子
により複雑に変化するのが実状である。そのため、それ
らの因子を個々に、所定の狭い範囲に制御するという厳
しい管理を行わざるを得なかった。例えば、エッチング
液の温度が上昇すると、表面粗さは大きくなり、比重が
上昇すると、表面粗さは小さくなる。また、遊離塩酸濃
度が上昇すると、0%から1%程度までは表面粗さは小
さくなり、それ以上の濃度では表面粗さは大きくなる。
さらに、ニッケル含有量が多くなると表面粗さは大きく
なる。そして、酸化還元電位(ORP)が上昇すると、
表面粗さは大きくなる。
However, the roughness of the etched surface is complicatedly changed by various factors such as the temperature of the etching solution, the specific gravity, the concentration of free hydrochloric acid, the nickel content, and the oxidation-reduction potential (ORP). It is a fact. Therefore, strict management has to be performed to individually control these factors within a predetermined narrow range. For example, as the temperature of the etchant increases, the surface roughness increases, and as the specific gravity increases, the surface roughness decreases. When the concentration of free hydrochloric acid increases, the surface roughness decreases from 0% to about 1%, and the surface roughness increases when the concentration is higher than 0%.
Furthermore, the surface roughness increases as the nickel content increases. Then, when the oxidation-reduction potential (ORP) increases,
The surface roughness increases.

【0005】これらの因子は所定の狭い管理範囲に制御
されているため、実際にはそのうちの一つの因子が管理
範囲からずれても、ただちにエッチング面粗さが、許容
できないほど粗くなるとも限らず、必要以上に厳しい管
理を行っていた。そして、エッチング液の疲労や、室温
等によるエッチング液の温度への影響等により、エッチ
ング精度と表面粗さを制御するのは困難であった。
Since these factors are controlled within a predetermined narrow control range, actually, even if one of the factors deviates from the control range, the etched surface roughness may not always become unacceptably rough. , The management was stricter than necessary. Then, it was difficult to control the etching accuracy and the surface roughness due to the fatigue of the etching solution, the influence of the room temperature on the temperature of the etching solution, and the like.

【0006】本発明は上記問題点に鑑みなされたもので
あり、鉄−ニッケル合金からなる金属基材をエッチング
する際エッチング時の表面粗さを一定の値以下に制御す
ることができるエッチング部品の製造方法を提供するこ
とを目的とする。
SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and provides an etching component capable of controlling the surface roughness during etching to a certain value or less when etching a metal substrate made of an iron-nickel alloy. It is intended to provide a manufacturing method.

【0007】[0007]

【課題を解決するための手段】本発明に於いて上記課題
を達成するために、まず請求項1においては、鉄−ニッ
ケル合金からなる金属基材を、塩化第二鉄溶液にてエッ
チング加工するエッチング部品の製造方法において、エ
ッチング加工時の前記金属基材の電位が150mVを越
える状態でエッチングを行うことを特徴とするエッチン
グ部品の製造方法としたものである。
Means for Solving the Problems In order to achieve the above object in the present invention, first, in claim 1, a metal substrate made of an iron-nickel alloy is etched with a ferric chloride solution. In the method for manufacturing an etched component, the etching is performed in a state where the potential of the metal base material during the etching process exceeds 150 mV.

【0008】また、請求項2においては、前記金属基材
がニッケルを30〜50重量%含有する鉄−ニッケル合
金を用いることを特徴とする請求項1記載のエッチング
部品の製造方法としたものである。
According to a second aspect of the present invention, there is provided the method of manufacturing an etched part according to the first aspect, wherein the metal substrate uses an iron-nickel alloy containing 30 to 50% by weight of nickel. is there.

【0009】[0009]

【発明の実施の形態】本発明では金属基材をエッチング
加工する際エッチング面粗さを制御できる因子について
再度検討を行い、エッチング液そのものの特性値ではな
く、金属基材のエッチング表面でのエッチング液の電気
化学反応の状態を表す電位に着目した。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS In the present invention, a factor that can control the etching surface roughness when etching a metal substrate is examined again, and it is not the characteristic value of the etching solution itself but the etching on the etching surface of the metal substrate. Attention was paid to the potential representing the state of the electrochemical reaction of the liquid.

【0010】その結果、金属基材のエッチング面の電位
とエッチング面粗さの関係は線形ではなく、急激に表面
粗さの変化する点(変曲点)が存在することが判明し
た。本発明で取りあげた鉄−ニッケル合金からなる金属
基材では、エッチング時の金属基材の電位を150mV
以上に制御することによって、エッチング面粗さを安定
して低く抑制することができる。さらに、ニッケルが3
0〜50質量%である金属基材の場合に、その効果が顕
著である。
As a result, it was found that the relationship between the potential of the etched surface of the metal base material and the etched surface roughness was not linear, and that there was a point where the surface roughness rapidly changed (inflection point). In the metal base made of the iron-nickel alloy taken up in the present invention, the potential of the metal base at the time of etching is set to 150 mV.
By controlling as described above, the etching surface roughness can be stably suppressed to a low level. In addition, three nickel
In the case of a metal substrate having a content of 0 to 50% by mass, the effect is remarkable.

【0011】[0011]

【実施例】以下実施例により本発明を詳細に説明する。
<実施例1>図1に金属基材をエッチング加工する際の
エッチング条件、金属基材の電位及び表面粗さ測定に用
いた回転電極装置の構成概要図を示す。回転電極装置1
00はエッチング槽11、エッチング加工に使用するエ
ッチング溶液、金属基材からなる回転電極31、参照電
極41及び金属基材の電位を測定する電圧計51から構
成されている。アンバー合金基板(YET36:日立金
属(株)製)を円筒形に加工して回転電極31とし、円
筒部分を絶縁性の材料で覆い、先端の円形部を露出し、
表面積を0.34cm2にしてエッチング溶液21に浸
漬した。回転電極31を毎分1600回転させ、所定の
エッチング溶液に5分間浸漬した。参照電極(基準電
極)41として濃度が3モル/リットルの塩化カリウム
水溶液中の銀塩化銀電極を用い、浸漬中のアンバー材の
電位を浸漬5分後に測定した。なお、電位は、全て標準
水素電極基準(SHE)で表示した。5分後エッチング
液から取り出し、純水で洗浄した後、アセトンで脱脂し
た。その後、表面粗さ計を用いて、JISで規格されて
いるRaを測定した。
The present invention will be described in detail with reference to the following examples.
<Embodiment 1> FIG. 1 is a schematic view showing a structure of a rotary electrode device used for etching conditions for etching a metal substrate, potential of the metal substrate and surface roughness. Rotating electrode device 1
Reference numeral 00 denotes an etching bath 11, an etching solution used for etching, a rotating electrode 31 made of a metal base, a reference electrode 41, and a voltmeter 51 for measuring the potential of the metal base. An amber alloy substrate (YET36: manufactured by Hitachi Metals, Ltd.) is processed into a cylindrical shape to form a rotating electrode 31, the cylindrical portion is covered with an insulating material, and a circular portion at the tip is exposed.
It was immersed in the etching solution 21 with a surface area of 0.34 cm 2 . The rotating electrode 31 was rotated at 1600 revolutions per minute and immersed in a predetermined etching solution for 5 minutes. Using a silver-silver chloride electrode in a potassium chloride aqueous solution having a concentration of 3 mol / liter as a reference electrode (reference electrode) 41, the potential of the amber material during the immersion was measured 5 minutes after the immersion. In addition, all electric potentials were displayed on the standard hydrogen electrode standard (SHE). After 5 minutes, it was removed from the etching solution, washed with pure water, and degreased with acetone. Thereafter, Ra specified by JIS was measured using a surface roughness meter.

【0012】エッチング液の条件として温度、比重、遊
離塩酸濃度、ORP、Ni含有量を変化させて、65種
類のエッチング溶液を準備し、エッチングテストを行
い、電位及び表面粗さRaを測定した。測定結果を表
1、表2及び図2に示す。
[0012] 65 kinds of etching solutions were prepared by changing the temperature, specific gravity, free hydrochloric acid concentration, ORP, and Ni content as conditions of the etching solution, and an etching test was performed to measure the potential and the surface roughness Ra. The measurement results are shown in Table 1, Table 2, and FIG.

【0013】[0013]

【表1】 [Table 1]

【0014】[0014]

【表2】 [Table 2]

【0015】表1及び表2は65種類のテストサンプル
について、エッチング液の条件、電位及び表面粗さRa
について測定した結果を示す。図2は65種類のテスト
サンプルの電位と表面粗さRaをグラフ上にプロットし
たものである。電位が150mV以下ではRaが0.8
〜1.4μmの表面粗さ、電位が150mV以上ではR
aが0.2〜0.6μmの表面粗さになっていることが
確認できた。
Tables 1 and 2 show the conditions of the etching solution, the potential and the surface roughness Ra for 65 kinds of test samples.
2 shows the results of measurement. FIG. 2 is a graph in which the potential and the surface roughness Ra of 65 types of test samples are plotted on a graph. Ra is 0.8 when the potential is 150 mV or less.
When the surface roughness is up to 1.4 μm and the potential is 150 mV or more, R
It was confirmed that a had a surface roughness of 0.2 to 0.6 μm.

【0016】<実施例2>本発明のエッチング部品の製
造方法を用いてシャドウマスクを作製する事例について
説明する。まず、板厚130μmのアンバー合金基板
(YET36:日立金属(株)製)からなる金属基材6
1の両面に、フォトレジストとして重クロム酸アンモニ
ウムを1重量%添加した水溶性レジスト(FR−17:
富士薬品工業(株))をディップコーティングにより塗
布し、60℃・30分の乾燥を行いレジスト層62を形
成した(図3(a)参照)。
<Example 2> An example in which a shadow mask is manufactured using the method for manufacturing an etched component of the present invention will be described. First, a metal base 6 made of an amber alloy substrate having a thickness of 130 μm (YET36: manufactured by Hitachi Metals, Ltd.)
A water-soluble resist (FR-17:
Fuji Pharmaceutical Co., Ltd. was applied by dip coating, and dried at 60 ° C. for 30 minutes to form a resist layer 62 (see FIG. 3A).

【0017】次に、金属基材61のフォトレジスト層6
2に、パターンを描いたネガ型のフォトマスクを通し
て、3kWの超高圧水銀灯を用い積算光量で1500m
J/cm2の露光を行った。フォトマスク上の描画パタ
ーンとしては、円形状のシャドウマスクパターンで、円
の直径が小孔用100μm、大孔用140μmであるも
のを用いた。さらに、一般の上水を現像液としてスプレ
ー圧0.1MPaで90秒間噴霧し、レジスト層62の
未露光部分を除去(現像)し、小孔開口部63を有する
小孔側フォトレジストパターン62a、大孔開口部64
を有する大孔側フォトレジストパターン62bを形成し
た(図3(b)参照)。
Next, the photoresist layer 6 of the metal base 61 is formed.
2, through a negative-type photomask on which a pattern is drawn, using a 3 kW ultra-high pressure mercury lamp to obtain an integrated light amount of 1500 m
Exposure of J / cm 2 was performed. As the drawing pattern on the photomask, a circular shadow mask pattern having a diameter of 100 μm for small holes and 140 μm for large holes was used. Further, a spray of common tap water as a developing solution is sprayed at a spray pressure of 0.1 MPa for 90 seconds to remove (develop) an unexposed portion of the resist layer 62, and to form a small-hole-side photoresist pattern 62 a having a small-hole opening 63. Large hole opening 64
(See FIG. 3B).

【0018】次に、小孔側フォトレジストパターン62
a及び大孔側フォトレジストパターン62bが形成され
た金属基板61をエッチング液として塩化第二鉄液を用
いてスプレーエッチング加工を施し、小孔開口マスク6
5及び大孔開口マスク66を得た(図3(c)参照)。
比重、液温度等を変えて数種のエッチング液条件で行っ
た。また、各条件での電位の測定も行った。その測定結
果を表3に示す。電位の測定には、基準電極として濃度
が3モル/リットルの塩化カリウム水溶液中の銀塩化銀
電極を用い、電位は標準水素電極基準(SHE)で表示し
た。
Next, the small hole side photoresist pattern 62
a and the metal substrate 61 on which the large-hole-side photoresist pattern 62b is formed is spray-etched using a ferric chloride solution as an etchant to form a small-hole opening mask 6
5 and the large hole opening mask 66 were obtained (see FIG. 3C).
The etching was performed under several types of etching liquid conditions while changing the specific gravity, the liquid temperature, and the like. Further, the potential was measured under each condition. Table 3 shows the measurement results. For the measurement of the potential, a silver-silver chloride electrode in an aqueous solution of potassium chloride having a concentration of 3 mol / l was used as a reference electrode, and the potential was indicated by a standard hydrogen electrode standard (SHE).

【0019】[0019]

【表3】 [Table 3]

【0020】次に、80℃に加熱した20重量%の水酸
化ナトリウム水溶液に3分間浸漬することにより小孔側
フォトレジストパターン62a及び大孔側フォトレジス
トパターン62bを除去し、孔貫通部寸法67がおよそ
140μmのシャドウマスクを得た。
Next, the small-hole-side photoresist pattern 62a and the large-hole-side photoresist pattern 62b are removed by immersion in a 20% by weight aqueous sodium hydroxide solution heated to 80 ° C. for 3 minutes. Obtained a shadow mask of about 140 μm.

【0021】電位が150mV以上のシャドウマスクに
関してはエッチング面の表面粗さRaが0.5以下、ま
た孔貫通部寸法67のばらつきも±1μm以下であっ
た。
With respect to the shadow mask having a potential of 150 mV or more, the surface roughness Ra of the etched surface was 0.5 or less, and the variation of the through hole dimension 67 was ± 1 μm or less.

【0022】[0022]

【発明の効果】本発明のエッチング部品の製造方法を用
いて、塩化第二鉄液にてエッチング加工する際、電位に
着目することにより、所望のエッチング表面粗さを得る
ことが可能となり、従って、表面粗さと寸法精度に優れ
るエッチング部品を提供することができる。
According to the present invention, a desired etching surface roughness can be obtained by paying attention to the electric potential when etching with a ferric chloride solution using the method for manufacturing an etching part of the present invention. Thus, it is possible to provide an etched part having excellent surface roughness and dimensional accuracy.

【図面の簡単な説明】[Brief description of the drawings]

【図1】エッチング液の条件と電位とエッチング表面粗
さを測定する回転電極装置の構成概要図である。
FIG. 1 is a schematic configuration diagram of a rotary electrode device for measuring conditions, potential, and etching surface roughness of an etching solution.

【図2】回転電極装置を用いてエッチング加工したサン
プルの電位と表面粗さの関係を示す説明図である。
FIG. 2 is an explanatory diagram showing the relationship between the potential and the surface roughness of a sample etched using a rotating electrode device.

【図3】本発明のエッチング部品の製造方法を用いて金
属基材をエッチング加工してシャドウマスクを作製する
製造工程を示す説明図である。
FIG. 3 is an explanatory view showing a manufacturing process of manufacturing a shadow mask by etching a metal base material using the manufacturing method of the etching component of the present invention.

【符号の説明】[Explanation of symbols]

11……エッチング槽 21……エッチング溶液 31……回転電極 41……参照電極 51……電圧計 100……回転電極装置 61……金属基材 62……レジスト層 62a……小孔レジストパターン 62b……大孔レジストパターン 63……小孔開口部 64……大孔開口部 65……小孔開口マスク 66……大孔開口マスク 67……孔貫通孔部寸法 11 Etching bath 21 Etching solution 31 Rotating electrode 41 Reference electrode 51 Voltmeter 100 Rotating electrode device 61 Metal substrate 62 Resist layer 62a Small hole resist pattern 62b ... Large hole resist pattern 63... Small hole opening 64... Large hole opening 65... Small hole opening mask 66.

フロントページの続き (72)発明者 中川 英元 神奈川県横浜市保土ヶ谷区常盤台79−5 横浜国立大学工学部内 (72)発明者 宮田 義一 神奈川県横浜市保土ヶ谷区常盤台79−5 横浜国立大学工学部内 Fターム(参考) 4K057 WA10 WA11 WB02 WB03 WB17 WE08 WG10 WL03 WN01 WN03 5C027 HH11 5F067 DA16 EA02 Continued on the front page (72) Inventor Eiji Nakagawa 79-5 Tokiwadai, Hodogaya-ku, Yokohama-shi, Kanagawa Prefecture Inside the Faculty of Engineering, Yokohama National University (72) Inventor Yoshikazu Miyata 79-5 Tokiwadai, Hodogaya-ku, Yokohama-shi, Kanagawa F Term (reference) 4K057 WA10 WA11 WB02 WB03 WB17 WE08 WG10 WL03 WN01 WN03 5C027 HH11 5F067 DA16 EA02

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】鉄−ニッケル合金からなる金属基材を、塩
化第二鉄溶液にてエッチング加工するエッチング部品の
製造方法において、 エッチング加工時の前記金属基材の電位が150mVを
越える状態でエッチングを行うことを特徴とするエッチ
ング部品の製造方法。
1. A method for manufacturing an etched part, comprising etching a metal substrate made of an iron-nickel alloy with a ferric chloride solution, wherein the metal substrate is etched in a state where the potential of the metal substrate during the etching process exceeds 150 mV. A method for manufacturing an etched component.
【請求項2】前記金属基材がニッケルを30〜50重量
%含有する鉄−ニッケル合金を用いることを特徴とする
請求項1記載のエッチング部品の製造方法。
2. The method according to claim 1, wherein the metal substrate is made of an iron-nickel alloy containing 30 to 50% by weight of nickel.
JP2001012876A 2001-01-22 2001-01-22 Etching part manufacturing method Expired - Fee Related JP3988391B2 (en)

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