JP2002212720A5 - - Google Patents
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- JP2002212720A5 JP2002212720A5 JP2001013974A JP2001013974A JP2002212720A5 JP 2002212720 A5 JP2002212720 A5 JP 2002212720A5 JP 2001013974 A JP2001013974 A JP 2001013974A JP 2001013974 A JP2001013974 A JP 2001013974A JP 2002212720 A5 JP2002212720 A5 JP 2002212720A5
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- JP
- Japan
- Prior art keywords
- emission intensity
- light emission
- target value
- value
- film
- Prior art date
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- 238000004544 sputter deposition Methods 0.000 description 9
- 239000000758 substrate Substances 0.000 description 8
- 210000002381 Plasma Anatomy 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000005755 formation reaction Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 2
- 238000005477 sputtering target Methods 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
Description
【特許請求の範囲】
【請求項１】 プラズマの発光強度をモニタしながら、成膜空間中で基板上に膜を形成するスパッタリング方法において、前記基板上に形成された膜厚を検出し、検出された値と予め設定された膜厚の設定値とを比較し、比較結果に基づいて前記発光強度の目標値を決定し、発光強度が該発光強度の目標値になるようにすることによって、成膜中に発光強度を変化させることを特徴とするスパッタリング方法。
【請求項２】 発光強度が前記発光強度の目標値になるように前記成膜空間に導入されるガスの少なくとも一種の流量を制御することを特徴とする請求項１に記載のスパッタリング方法。
【請求項３】 スパッタリングターゲットとしてＩｎを含むターゲットを用いることを特徴とする請求項１又は２に記載のスパッタリング方法。
【請求項４】 スパッタリングターゲットとして円筒状の回転ターゲットを用いることを特徴とする請求項１乃至３のいずれかに記載のスパッタリング方法。
【請求項５】 前記流量が制御されるガスとして酸素ガスを選択することを特徴とする請求項２に記載のスパッタリング方法。
【請求項６】 成膜容器と基板搬送機構と発光強度モニタとを有するスパッタリング装置において、基板上に形成された膜厚を測定し、測定結果を出力する膜厚測定器と、該膜厚測定器の出力と予め定められた膜厚設定値とを比較し、比較結果に基づいて前記発光強度モニタの目標値を出力する比較器と、該目標値が入力され、プラズマの発光強度が該目標値になるようにすることによって、成膜中にプラズマの発光強度を変化させる発光強度制御機構とを有することを特徴とするスパッタリング装置。
【請求項７】 前記目標値が入力され、該目標値に基づいて前記成膜容器に導入されるガスの少なくとも一種の流量を制御するガス流量制御機構を有することを特徴とする請求項６に記載のスパッタリング装置。
[Claims]
In a sputtering method for forming a film on a substrate in a film formation space while monitoring the emission intensity of plasma, a film thickness formed on the substrate is detected, and the detected value is set in advance. The target value of the light emission intensity is determined based on the comparison result, and the light emission intensity is set to the target value of the light emission intensity. Is varied .
2. The sputtering method according to claim 1, wherein a flow rate of at least one kind of gas introduced into the film forming space is controlled so that a light emission intensity becomes a target value of the light emission intensity.
3. The sputtering method according to claim 1, wherein a target containing In is used as the sputtering target.
4. The sputtering method according to claim 1, wherein a cylindrical rotary target is used as the sputtering target.
5. The sputtering method according to claim 2, wherein oxygen gas is selected as the gas whose flow rate is controlled.
6. A film thickness measuring device for measuring a film thickness formed on a substrate and outputting a measurement result in a sputtering apparatus having a film forming container, a substrate transport mechanism, and a light emission intensity monitor, comparing the thickness setting value set in advance and the output of the vessel, a comparator for outputting a target value of the emission intensity monitor based on the comparison result, the target value is input, the plasma emission intensity is the target A light emission intensity control mechanism for changing the light emission intensity of plasma during film formation by setting the value to a value .
7. The apparatus according to claim 6, further comprising a gas flow rate control mechanism that receives the target value and controls at least one flow rate of a gas introduced into the film forming container based on the target value. The sputtering apparatus as described in the above.
即ち、本発明は、プラズマの発光強度をモニタしながら、成膜空間中で基板上に膜を形成するスパッタリング方法において、前記基板上に形成された膜厚を検出し、検出された値と予め設定された膜厚の設定値とを比較し、比較結果に基づいて前記発光強度の目標値を決定し、発光強度が該発光強度の目標値になるようにすることによって、成膜中に発光強度を変化させることを特徴とするものである。 That is, in the present invention, in a sputtering method for forming a film on a substrate in a film forming space while monitoring the emission intensity of plasma, a film thickness formed on the substrate is detected, and the detected value is determined in advance by using the detected value. The target value of the light emission intensity is determined based on the comparison result with a set value of the set film thickness, and the light emission intensity is set to the target value of the light emission intensity, thereby emitting light during the film formation. It is characterized in that the strength is changed .
また、本発明の製造装置は、成膜容器と基板搬送機構と発光強度モニタとを有するスパッタリング装置において、基板上に形成された膜厚を測定し、測定結果を出力する膜厚測定器と、該膜厚測定器の出力と予め定められた膜厚設定値とを比較し、比較結果に基づいて前記発光強度モニタの目標値を出力する比較器と、該目標値が入力され、プラズマの発光強度が該目標値になるようにすることによって、成膜中にプラズマの発光強度を変化させる発光強度制御機構とを有することを特徴とするものである。 Further, the manufacturing apparatus of the present invention, in a sputtering apparatus having a film forming container, a substrate transport mechanism and a light emission intensity monitor, a film thickness measuring device that measures a film thickness formed on a substrate and outputs a measurement result, comparing the thickness setting value set in advance and the output of the film thickness measuring device, comparing a comparator for outputting a target value of the emission intensity monitor based on the result, the target value is input, plasma emission A light emission intensity control mechanism for changing the light emission intensity of the plasma during the film formation by setting the intensity to the target value .
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001013974A JP2002212720A (en) | 2001-01-23 | 2001-01-23 | Method and device for sputtering |
| US10/050,787 US6783640B2 (en) | 2001-01-23 | 2002-01-18 | Sputtering method and sputtering apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001013974A JP2002212720A (en) | 2001-01-23 | 2001-01-23 | Method and device for sputtering |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002212720A JP2002212720A (en) | 2002-07-31 |
| JP2002212720A5 true JP2002212720A5 (en) | 2008-03-06 |
Family
ID=18880725
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001013974A Pending JP2002212720A (en) | 2001-01-23 | 2001-01-23 | Method and device for sputtering |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US6783640B2 (en) |
| JP (1) | JP2002212720A (en) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003013218A (en) | 2001-06-29 | 2003-01-15 | Canon Inc | Long-term sputtering method |
| US7501305B2 (en) * | 2006-10-23 | 2009-03-10 | Canon Kabushiki Kaisha | Method for forming deposited film and photovoltaic element |
| WO2009012346A1 (en) * | 2007-07-16 | 2009-01-22 | Ascent Solar Technologies, Inc. | Methods for fabricating p-type cadmium selenide |
| US20100200395A1 (en) * | 2009-02-06 | 2010-08-12 | Anton Dietrich | Techniques for depositing transparent conductive oxide coatings using dual C-MAG sputter apparatuses |
| KR20110011297A (en) * | 2009-07-28 | 2011-02-08 | 지 . 텍 (주) | Apparatus for realtime detecting sheet resistance |
| TWI485277B (en) * | 2013-12-13 | 2015-05-21 | Univ Minghsin Sci & Tech | Multi-sputtering cathodes stabilized process control method for reactive-sputtering deposition |
| JP6670546B2 (en) | 2015-02-17 | 2020-03-25 | 日東電工株式会社 | Thin film deposition method |
| JP2016204705A (en) | 2015-04-22 | 2016-12-08 | キヤノントッキ株式会社 | Film deposition apparatus, and film deposition method |
| JP2019094534A (en) * | 2017-11-21 | 2019-06-20 | キヤノン株式会社 | Sputtering device and method of manufacturing film |
| JP7256653B2 (en) * | 2019-02-14 | 2023-04-12 | キヤノン株式会社 | Paper feeder and information processing method |
| CN114277348B (en) * | 2021-12-27 | 2023-06-30 | 晋能清洁能源科技股份公司 | Method for controlling magnetron sputtering equipment in HJT battery production |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4356073A (en) | 1981-02-12 | 1982-10-26 | Shatterproof Glass Corporation | Magnetron cathode sputtering apparatus |
| US4422916A (en) | 1981-02-12 | 1983-12-27 | Shatterproof Glass Corporation | Magnetron cathode sputtering apparatus |
| JPH0774444B2 (en) * | 1986-03-11 | 1995-08-09 | 松下電器産業株式会社 | Spatter device |
| JPH04329881A (en) | 1991-05-01 | 1992-11-18 | Canon Inc | Deposited film forming device by microwave plasma cvd method |
| JP3076414B2 (en) | 1991-07-26 | 2000-08-14 | キヤノン株式会社 | Deposition film forming apparatus by microwave plasma CVD method |
| JP3501416B2 (en) | 1994-04-28 | 2004-03-02 | 忠弘 大見 | Semiconductor device |
| US6273955B1 (en) | 1995-08-28 | 2001-08-14 | Canon Kabushiki Kaisha | Film forming apparatus |
| JP3591977B2 (en) | 1996-03-18 | 2004-11-24 | キヤノン株式会社 | Film deposition method and film deposition apparatus using microwave plasma CVD |
| JP3684011B2 (en) | 1996-12-12 | 2005-08-17 | キヤノン株式会社 | Method and apparatus for forming deposited film by plasma CVD method |
| JPH116064A (en) * | 1997-06-18 | 1999-01-12 | Olympus Optical Co Ltd | Method and equipment for production of thin optical film |
| JPH1180964A (en) | 1997-07-07 | 1999-03-26 | Canon Inc | Deposited film forming device by plasma cvd method |
| JPH1129863A (en) * | 1997-07-10 | 1999-02-02 | Canon Inc | Production of deposited film |
| JP3890153B2 (en) | 1997-12-26 | 2007-03-07 | キヤノン株式会社 | Method and apparatus for producing electrophotographic photosensitive member |
| JP4095205B2 (en) | 1998-06-18 | 2008-06-04 | キヤノン株式会社 | Deposited film forming method |
-
2001
- 2001-01-23 JP JP2001013974A patent/JP2002212720A/en active Pending
-
2002
- 2002-01-18 US US10/050,787 patent/US6783640B2/en not_active Expired - Fee Related
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