JP2002207986A - Card type recording medium and manufacturing method for the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a card type recording medium whose capacity can be made large and which is excellent in rigidity and has high impact resistance, and a method for manufacturing the card type recording medium. SOLUTION: Memory modules 221, 222 and 270 constructed in such a manner that a plurality of memory chips 15 are mounted on substrates 21, 22, 70, 63 and 65 for memories are mounted on one face of a base board 10, IC chips 13, 14 and 60 for performing operation control of the plurality of the memories are also mounted on the other face of the base board, and all of the above parts are housed in packages 30 and 31.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a card-type recording medium in which a memory chip is mounted on at least one surface of a base substrate and an IC chip for controlling the operation of the memory chip is mounted on the other surface.

[0002]

2. Description of the Related Art Conventionally, as an example of this type of card type recording medium, a small memory card having a semiconductor memory chip such as a flash memory has been known. Such small memory cards tend to be particularly frequently used in portable devices because of their excellent portability, and it is desired to record still images, moving images, music, and the like that are communicated between the portable devices.
For this reason, it is desired that a small memory card has a larger memory capacity.

[0003]

However, in general, since the package size and thickness of a small memory card are determined by standards, the memory chip is mounted on a substrate on which a memory chip control IC chip in the small memory card is mounted. However, it is difficult to greatly increase the memory capacity only by implementing. When the memory capacity is significantly increased, a small memory card needs to have a certain degree of rigidity because it is inserted into and taken out of a portable device, and it also requires impact resistance. There was also.

SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to solve the above-mentioned problems, and to provide a card-type recording medium which can increase the memory capacity, has excellent rigidity and good impact resistance, and a method of manufacturing the same. To provide.

[0005]

In order to achieve the above object, the present invention is configured as follows.

According to the first aspect of the present invention, a memory module configured by mounting a plurality of memory chips is mounted on one surface of a base substrate, and the memory module is mounted on the other surface of the base substrate. The present invention provides a card-type recording medium in which an IC chip for controlling the operation of the memory chip is mounted and the whole is housed in a package.

According to a second aspect of the present invention, there is provided the card-type recording medium according to the first aspect, wherein the memory chip is mounted on each of the front and back surfaces of the memory substrate to constitute the memory module. provide.

According to a third aspect of the present invention, the memory module is constituted by a plurality of memory modules, and the first or the second memory chip is mounted on each memory substrate of each memory module. A card-type recording medium according to the second aspect is provided.

According to a fourth aspect of the present invention, the card type recording medium according to any one of the first to third aspects, wherein the memory chip is mounted on the one surface of the base substrate. I will provide a.

According to a fifth aspect of the present invention, an electrode of the memory substrate and an electrode of the base substrate are provided between the electrode of the memory substrate and the electrode of the base substrate. A first conductor electrically connected by a conductor electrically connected in a direction perpendicular to the mounting substrate mounting surface.
The card-type recording medium according to any one of the aspects 1 to 4, is provided.

According to a sixth aspect of the present invention, between the electrodes of each of the memory substrates, the electrodes of the adjacent memory substrates are electrically connected in a direction perpendicular to the memory chip mounting surface of the memory substrate. A card-type recording medium according to a third aspect is provided, wherein the card-type recording medium is electrically connected by electrically connected conductors.

According to a seventh aspect of the present invention, the conductor comprises:
The card-type recording medium according to the fifth or sixth aspect, which is a conductive wire, is provided.

According to an eighth aspect of the present invention, the memory module comprises a first memory module and a second memory module, and the first memory module is provided on the base substrate.
A memory module is mounted, the second memory module is mounted on the first memory module, and the memory chip is mounted on each memory substrate of each memory module, while the electrode of the base substrate is connected to the memory chip. A first structure in which the electrode of the memory substrate of the first memory module and the electrode of the memory substrate of the second memory module are electrically connected by one conductive wire.
The card-type recording medium according to any one of the aspects 1 to 4, is provided.

According to a ninth aspect of the present invention, the conductor comprises:
The card-type recording medium according to the fifth or sixth aspect, which is a conductive ball, is provided.

According to a tenth aspect of the present invention, there is provided the card-type recording medium according to the fifth or sixth aspect, wherein the conductor is a conductive pin disposed in an insulating resin sheet.

According to an eleventh aspect of the present invention, the conductor is a rectangular parallelepiped electronic component in which the electrodes on the upper and lower surfaces of each end are electrically connected to each other. And a card-type recording medium according to (1).

[0017] According to a twelfth aspect of the present invention, the plurality of memory chips are arranged on the memory substrate symmetrically with respect to the center in the longitudinal direction of the memory substrate.
The card-type recording medium according to any one of aspects 1 to 11, is provided.

According to a thirteenth aspect of the present invention, at least one memory chip is mounted on both sides of the memory substrate, and the positions of the memory chips mounted on both sides of the memory substrate are determined. The card-type recording medium according to any one of the first to twelfth aspects, wherein the card-type recording medium is mounted at the same position.

According to a fourteenth aspect of the present invention, there is provided the card-type recording medium according to any one of the first to thirteenth aspects, wherein a memory chip is mounted on the other surface of the base substrate. .

According to a fifteenth aspect of the present invention, an RF LSI chip and a baseband LSI chip are mounted on the memory substrate or the base substrate.
The present invention provides a card-type recording medium according to any one of the first to thirteenth aspects.

According to a sixteenth aspect of the present invention, there is provided the card-type recording medium according to any one of the first to fifteenth aspects, wherein the memory substrate is a film substrate.

According to a seventeenth aspect of the present invention, there is provided the card-type recording medium according to any one of the first to fifteenth aspects, wherein the memory substrate and the base substrate are one film substrate.

According to an eighteenth aspect of the present invention, the first to fifteenth aspects are provided.
A card-type recording medium manufacturing method for manufacturing the card-type recording medium according to any one of the above aspects, wherein after stacking the memory substrate on the one surface of the base substrate,
The electrode of the base substrate and the electrode of the memory substrate,
A method of manufacturing a card-type recording medium is provided which is electrically connected by a conductor which is electrically connected in a direction orthogonal to a memory substrate mounting surface of the base substrate.

According to a nineteenth aspect of the present invention, the third or sixth aspect
A card-type recording medium manufacturing method for manufacturing the card-type recording medium according to the aspect, wherein the one memory substrate is stacked on the one surface of the base substrate, and the one memory substrate is After the other one of the memory substrates is overlaid, the electrodes of the base substrate and the electrodes of the plurality of memory substrates are electrically connected in a direction orthogonal to the memory substrate mounting surface of the base substrate. Provided is a method of manufacturing a card type recording medium electrically connected by a connecting conductor.

According to a twentieth aspect of the present invention, there is provided the method for manufacturing a card-type recording medium according to the eighteenth or nineteenth aspect, wherein the conductor is a conductive wire.

According to a twenty-first aspect of the present invention, in the nineteenth aspect, the electrodes of the base substrate and the electrodes of the plurality of memory substrates are electrically connected by one conductive wire. And a method for manufacturing a card-type recording medium.

According to a twenty-second aspect of the present invention, there is provided the method of manufacturing a card-type recording medium according to the eighteenth or nineteenth aspect, wherein the conductor is a conductive ball.

According to a twenty-third aspect of the present invention, the memory module includes a first memory module and a second memory module, and the conductor functions as an electrode of the memory substrate of the first memory module. A conductive ball that penetrates the through hole, an upper portion of the conductive ball is electrically connected to an electrode of the memory substrate of the second memory module, and a lower portion of the conductive ball is the base substrate module The card-type recording medium according to the fifth aspect, wherein the card-type recording medium is electrically connected to the electrode of the base substrate.

According to a twenty-fourth aspect of the present invention, the memory substrate is rectangular, the memory chip is rectangular, and a long side of the rectangular memory chip is at least one of the rectangular memory substrate. In any one of the first to seventeenth aspects, wherein an electrode of the memory substrate connected to an electrode of the base substrate is arranged along the short side substantially in parallel with the short side of The present invention provides a card-type recording medium according to the above.

According to a twenty-fifth aspect of the present invention, a plurality of the memory chips are provided on one surface of the memory substrate, and are provided on the one surface of the memory substrate and between the plurality of memory chips. According to a twenty-fourth aspect, there is provided the card-type recording medium according to the twenty-fourth aspect, wherein an electrode connected to an electrode of the base substrate is disposed substantially parallel to the short side of the memory substrate.

According to a twenty-sixth aspect of the present invention, the memory module includes a plurality of stacked memory modules, and the memory module is arranged on a memory substrate of one of the plurality of memory modules. The first to the first, wherein the longitudinal direction of the chip and the longitudinal direction of the memory chip arranged on the memory substrate of the other one of the plurality of memory modules intersect with each other.
17. A card-type recording medium according to any one of aspects 17, 24, and 25.

According to a twenty-seventh aspect of the present invention, the memory module comprises a plurality of stacked memory modules, and the memory module is disposed on a memory substrate of an upper one of the plurality of memory modules. The first to the first, second, and third, wherein the thickness of the chip is larger than the thickness of the memory chip arranged on the memory substrate of the lower memory module of the plurality of memory modules.
A card-type recording medium according to any one of aspects 4, 25, and 26 is provided.

According to a twenty-eighth aspect of the present invention, a memory module comprising a plurality of memory chips mounted on a memory substrate is mounted on the other surface of the base substrate. , 24 to 27. A card-type recording medium according to any one of the above aspects.

[0034] According to a twenty-ninth aspect of the present invention, the first to seventeenth and second aspects further include a reinforcing portion of an insulating reinforcing resin disposed between the memory substrate and the base substrate.
A card-type recording medium according to any one of aspects 4 to 28, is provided.

According to a thirtieth aspect of the present invention, the first to the fifth modules further include a reinforcing portion of an insulating reinforcing resin disposed between the memory substrates of the plurality of memory modules.
17. A card-type recording medium according to any one of aspects 17, 24 to 29.

According to a thirty-first aspect of the present invention, the first to the first aspects further include a reinforcing portion of an insulating reinforcing resin disposed between the inner surface of the package and the memory substrate.
7. A card-type recording medium according to any one of aspects 7, 24 to 30, is provided.

According to a thirty-second aspect of the present invention, there is provided a semiconductor device according to any one of the first to seventeenth aspects, further comprising a reinforcing portion of an insulating reinforcing resin disposed between the inner surface of the package and the base substrate.
30. A card-type recording medium according to any one of the aspects 24-31.

According to a thirty-third aspect of the present invention, there is provided a card-type recording apparatus according to any one of the twenty-ninth to thirty-first aspects, wherein the thickness of the insulating reinforcing resin is equal to or greater than the thickness of the memory chip. Provide media.

According to a thirty-fourth aspect of the present invention, at least one memory chip is mounted on each side of the memory substrate, and the positions of the memory chips mounted on both sides of the memory substrate are determined. A card-type recording medium according to a thirteenth aspect, wherein the card-type recording medium has substantially the same shape at substantially the same position.

According to a thirty-fifth aspect of the present invention, there is further provided a joint between the memory substrate and the base substrate for keeping a constant interval therebetween.
A card-type recording medium according to any one of aspects 4-34.

According to a thirty-sixth aspect of the present invention, any one of the electrode of the base substrate and the electrode of the memory substrate further includes a protruding electrode for joining the two electrodes. 30. A card-type recording medium according to any one of 24 to 35.

[0042]

Embodiments of the present invention will be described below in detail with reference to the drawings. In the drawings, for easy understanding, the bonding portion between the IC chip or the memory chip and each substrate is shown in a cross section, but in reality, it is preferable that all the bonding portions are sealed with a sealing resin. .

First, a specific basic configuration of a small memory card as an example of a card type recording medium according to various embodiments of the present invention is shown in FIGS.

In the figure, reference numeral 110 denotes a substrate, and 113 denotes an ASIC (Application Specific Int.) Mounted on the back surface of the substrate 110 (the upper surface in FIG. 23 and the lower surface in FIG. 24).
egrated Circuit) controller LSI chip (AS
IC chip for IC), 114 is an IC chip for microprocessor mounted on the back surface of the substrate 110, and 115 is a CSP (IC surface mounted on the lower surface in FIG. 23 and the upper surface in FIG. 24). Chip size package), 116 is an electrode of the substrate 110,
118 is a chip capacitor mounted on the surface of the substrate 110, 119 is a chip resistor mounted on the surface of the substrate 110, 130 is an upper case covering the surface of the substrate 110, 131
Is a lower case fixed to the upper case 130 and covers the back surface of the substrate 110; 131a is an electrode opening of the lower case 131;
Reference numeral 32 denotes a write protection switch.

As an example of the standard of such a small memory card, as shown in FIG. 25, a small memory card as a product in which a lower case 131 is fixed to an upper case 130 has a width of 24 mm × a height of 32 mm. X thickness 2.1mm
It is required that In FIG. 24, the thickness of the upper case 130 is 1.4 mm, and the thickness of the lower case 131 is 0.7 mm. In addition, the flash memory I
As an example, the C chip has a thickness of 80 μm and a short side of 7.8 m.
It has a rectangular thin plate shape of mx 16 mm long side.

Various embodiments of the present invention for increasing the memory capacity of a small memory card conforming to such a standard will be described in detail below. However, this standard is described as an example for easy understanding, and the present invention is not limited to this.

(First Embodiment) As shown in FIGS. 1 to 3, a small memory card as an example of a card-type recording medium according to a first embodiment of the present invention includes a base substrate module 210, a base substrate The controller LSI chip 11 shown in FIG. 24 includes a first memory module 221 mounted on the module 210 and a second memory module 222 mounted on the first memory module 221.
3, a microprocessor IC chip 114, and a flash memory chip 115 are mounted on the substrate 110, and each case 30,
31 are stored with a predetermined gap therebetween.

The base substrate module 210 includes a microprocessor I
The C chip 14 and the ASIC IC chip 13 are mounted at predetermined intervals. Each electrode of the microprocessor IC chip 14 and each electrode of each substrate, and A
Each electrode of the SIC IC chip 13 and each electrode of each substrate are directly bonded via a bump or the like, that is, flip-chip mounted, and then the bonding portion is sealed with an insulating sealing resin. A chip capacitor 18 and a chip resistor 19 are mounted on one end of the upper surface of the base substrate 10 along a short side orthogonal to a long side along the longitudinal direction of the base substrate 10. In the vicinity of the long side along the longitudinal direction of the base substrate 10, it is electrically connected to the circuit pattern of the base substrate 10 and functions as an electrode for connecting to other memory substrates 21 and 22. A large number of through holes 10a are formed, and a cream solder 12 is disposed in each of the through holes 10a. Through holes 10a at both ends in the longitudinal direction
May be used as the positioning hole 10z when manufacturing a small memory card. In addition, 16 is a card electrode of a small memory card, 18 is a chip capacitor, and 19 is a chip resistor.

The first memory module 221 has a total of four flash EEPROMs on both front and back surfaces (upper and lower surfaces) of the rectangular first memory substrate 21 smaller than the base substrate 10.
Memory chip 1 such as non-volatile memory chip such as OM
5 is implemented. Each electrode of each memory chip 15 and each electrode of the first memory substrate 21 are directly bonded via a bump or the like, that is, flip-chip mounted, and then the bonding portion is sealed with an insulating sealing resin. I have.
Near the long side along the longitudinal direction of the first memory substrate 21, the base substrate 10 and the second memory substrate 2 are electrically connected to the circuit pattern of the first memory substrate 21.
A large number of through-holes 21a are formed so as to function as electrodes for connection to the second 2, and the cream solder 12 is arranged in each of the through-holes 21a. The through holes 21a at both ends in the longitudinal direction may be used as positioning holes 21z when manufacturing a small memory card.

The second memory module 222 has the same structure as the first memory module 221 and
A memory chip 15 such as a total of four flash memories is mounted on both front and back surfaces (upper and lower surfaces) of a rectangular second memory substrate 22 smaller than 0. Each electrode of each memory chip 15 and each electrode of the second memory substrate 22 are directly bonded via a bump or the like, that is, flip-chip mounted, and then the bonded portion is sealed with an insulating sealing resin. I have. In the vicinity of the long side along the longitudinal direction of the second memory substrate 22, an electrical connection is made with the circuit pattern of the second memory substrate 22, and the second memory substrate 22 is connected to the base substrate 10 and the first memory substrate 21. A large number of through holes 22a are formed so as to function as electrodes of
A cream solder 12 is arranged in 2a. The through holes 22a at both ends in the longitudinal direction may be used as positioning holes 22z when manufacturing a small memory card.

The through holes 10 a of the base substrate 10, the through holes 21 a of the first memory substrate 21, and the through holes 22 a of the second memory substrate 22 are mounted on the memory substrate mounting surface of the base substrate 10. Conductive wires 11 as an example of a conductor that electrically connects the substrates in a direction orthogonal to each other penetrate, and come into contact with cream solder 12 in each through hole,
Cream solder 12 in each through hole 10a of base substrate 10
And the cream solder 12 in each through hole 21a of the first memory substrate 21 and each through hole 22a of the second memory substrate 22
The cream solder 12 inside is electrically connected by the conductive wire 11. As a specific example, each through-hole is a through-hole that is connected to a circuit of each substrate and has a diameter of 0.50 μm and an inner peripheral surface thereof is plated with gold. As the conductive wire 11, a copper wire having a diameter of 0.20 μm is used. I do. With respect to each through hole, only each through hole 10a of the base substrate 10 is a through hole that is connected to the circuit of the base substrate 10 and has a diameter of 0.50 μm and an inner peripheral surface thereof is plated with gold. The holes 21a and the through holes 22a of the second memory substrate 22 are respectively connected to the circuits of the respective memory substrate substrates, and have a diameter of 0.50 μm and a substantially semicircular shape obtained by cutting a through-hole whose inner peripheral surface is gold-plated in half. (See FIG. 1).

As described above, the base substrate 10, the first memory substrate 21, and the second memory substrate 22 are connected to the conductive wires 1.
1, the memory chips 15 can be mounted on both sides of the base substrate 10 respectively.
The memory substrates 21 and 22 of the layers can be arranged in a small space at a small interval, and the connection strength between the electrodes can be improved by connecting the electrodes between the substrates with the conductive wires 11. it can. With such a configuration, as compared with the case where the memory is mounted on either one surface of the base substrate 10, the area in which the memory can be mounted is smaller on both the front and back surfaces of the first memory substrate 21 and the second memory The memory capacity can be increased four times as much as the front and back surfaces of the substrate 22 and the memory capacity can be increased up to four times. So, for example,
When one memory chip 15 is 32 MB, when only two memory chips 15 can be mounted, 2 × 32 MB = 6
Up to 8 × 32 MB = 256 MB instead of 4 MB
It can be. Further, when one memory chip 15 has 64 MB, a maximum of 8 × 64 MB = 512 MB
It can be. Furthermore, one memory chip 15
Is 128 MB at the maximum, 8 × 128 MB = about 1
GB.

Further, since two memory chips 15 of the same size and thickness can be mounted at exactly the same position on each of the front and back surfaces of each of the memory substrates 21 and 22, each of the memory substrates 21 and 22 is thermally or When mechanical stress is applied,
For example, it is possible to prevent each substrate from warping to one side due to curing shrinkage of the sealing resin. In addition, each of the memory substrates 2
In each of the memory substrates 21 and 22, the plurality of memory chips 15 can be arranged symmetrically with respect to the center of the memory substrates 21 and 22 in the longitudinal direction. Distribution can be prevented.

Further, the memory modules 221 and 222 on which the memory chip 15 is mounted can be formed separately as a separate component from the base substrate 10, and if the memory chip 15 is determined to be defective at the time of burn-in, Only the memory module needs to be discarded, and the IC chip 13,
There is no need to discard the base substrate 10 on which the substrate 14 is mounted.

Further, since each memory chip 15 is directly mounted on each substrate without outer leads, that is, flip-chip mounting, in other words, each electrode of each memory chip 15 and each electrode of each substrate are connected to bumps or the like. Since the outer leads are directly connected through the memory chips 15, the space and time required to pull out the outer leads and join the respective substrates can be saved, and the space can be reduced and the process can be shortened.

In order to comply with the standard of the small memory card shown in FIGS. 23 to 25, as shown in FIG. 2, for example, as shown in FIG.
The thickness of the memory substrate 21 is 0.15 mm, the thickness of the second memory substrate 22 is 0.15 mm, and the thickness of the second memory substrate 22 is 0.15 mm.
The gap between the memory chip 15 mounted on the lower surface of the first memory substrate 21 and the memory chip 15 mounted on the upper surface of the first memory substrate 21 is 0.41 mm, and the memory chip 15 mounted on the lower surface of the first memory substrate 21 and the base The gap with the upper surface of the substrate 10 is 0.41 mm. The upper surface of the memory chip 15 mounted on the upper surface of the second memory substrate 22 and the base substrate 1
0 is 1.12 mm, and the distance between the lower surface of the base substrate 10 and the upper surfaces of the microprocessor IC chip 14 and the ASIC IC chip 13 mounted on the lower surface of the base substrate 10 is 0.35 mm. The upper surface of the memory chip 15 mounted on the upper surface of the second memory substrate 22 and the microprocessor I mounted on the lower surface of the base substrate 10
The distance between the C chip 14 and the upper surface of the ASIC IC chip 13 is set to 1.47 mm.

Each substrate, that is, the base substrate 1
0, the first memory substrate 21 and the second memory substrate 22 may be in any form of a single layer substrate or a multilayer substrate.

Hereinafter, a method for manufacturing the small memory card will be described.

As shown in FIG. 4A, the base substrate 10
On the lower surface side of the IC chip, two IC chips, a microprocessor IC chip 14 as a microcomputer IC chip and an ASIC IC chip 13 as a controller IC chip, are bare-chip mounted to form one base substrate module 210. . At this time, although not specifically shown, a card electrode 16 of a small memory card is formed on the lower surface of the base substrate 10, and a chip capacitor 18 and a chip resistor 19 are also mounted on the upper surface of the base substrate 10. Keep it.

As shown in FIGS. 4B and 4C, two memory chips 15 such as flash memories are flip-chip mounted on the upper and lower surfaces of two memory substrates 21 and 22, respectively. Then, two first and second memory modules 221 and 222 are formed.

FIGS. 4A, 4B, and 4
Each of the steps shown in (C) may be performed simultaneously, or may be performed in an arbitrary order. In the case where a large number of small memory cards are manufactured, FIGS.
(B) and the process shown in FIG. 4 (C) are performed a number of times, respectively, so that a large number of the first and second memory modules 221 and
222 and the base substrate module 210 may be manufactured in advance.

Next, as shown in FIG. 5A, the cream solder 12 is supplied into each through hole 10a of the base substrate 10 by the dispenser 51. Similarly, as shown in FIGS. 5B and 5C, the cream solder 12 is supplied into the through holes 21a and 22a of the first and second memory substrates 21 and 22 by the dispenser 51, respectively. In each of the substrates 10, 21 and 22, the through-holes at the same positions at both ends in the longitudinal direction are aligned with the positioning holes 10z, 21z and 2.
Since it is used as 2z, it does not function as an electrode for connecting the substrate, and the cream solder 12 is not inserted. In addition, the positioning holes 10z, 2
Instead of 1z and 22z, a positioning mark may be provided on each substrate, or a part of a circuit pattern of each substrate may be used as a positioning mark to be used for positioning between the substrates.

Next, as shown in FIG. 5D, the first memory module 221 and the second memory module 222 are temporarily fixed. That is, the second memory substrate 22 is placed on the first memory substrate 21 and the positioning is adjusted so that the positioning holes 21z and 22z at the respective ends are located at the same position. By the fixing adhesive 52, the upper surface of the two memory chips 15 and 15 mounted on the upper surface of the first memory substrate 21 and the two memory chips 15 and 15 mounted on the lower surface of the second memory substrate 22 are formed. By bonding the lower surface, the first memory module 221 and the second memory module 222 are temporarily fixed. At this time, the first memory substrate 21 and the second memory substrate 22 are substantially parallel to each other. This is to make the overall size of the small memory card within the standard.

Next, as shown in FIG. 6A, the temporarily fixed first memory module 221 and second memory module 222 are temporarily fixed to the base substrate module 210. That is, the two memory chips 15 mounted on the lower surface of the first memory module 221 and the upper surface of the base substrate module 210 are bonded to each other with the insulating temporary fixing adhesive 52, and The temporarily fixed first memory module 221 and second memory module 222 are temporarily fixed. At this time, the first memory substrate 21, the second memory substrate 22, and the base substrate 10 are substantially parallel to each other. This is to make the overall size of the small memory card within the standard.

Next, as shown in FIG. 6B, the electrodes between the modules are individually connected by conductive wires 11. That is, each positioning hole 10z of the base substrate module 210, each positioning hole 21z of the first memory module 221, and each positioning hole 22z of the second memory module 222 are positioned so as to match each other, and The electrodes of the cream solder 12 in the through holes 10a, the electrodes of the cream solder 12 in the through holes 21a of the first memory module 221 and the electrodes of the cream solder 12 in the through holes 22a of the second memory module 222 are electrically connected. Are individually connected by the sex wires 11.

Thereafter, each cream solder 12 is melted by being put into a reflow furnace or by blowing hot air such as hot air, so that each cream solder 12 is melted.
And the conductive wire 11 are completely fixed,
Make a secure electrical connection.

Next, between the base substrate 10 of the base substrate module 210 and the first memory substrate 21 of the first memory module 221, the first memory substrate 221 of the first memory module 221 and the second memory module 222 The space between the second memory substrate 22 and the space between the two memory chips 15 on the upper surface of the second memory substrate 22 are respectively sealed with an insulating sealing resin 200.

Next, this is accommodated in the upper and lower cases 30, 31 to obtain the small memory card.

According to the method of manufacturing the small memory card, before mounting the small memory card of FIG. 1 on the base substrate module 210, the first memory module 221 and the second memory module 222 are mounted in advance and burn-in is performed. The function of the entire memory module can be inspected by a test or the like. In the case of a failure, only the memory module needs to be discarded, and it is not necessary to discard the expensive base board module 210 compared to the memory module. Cost can be reduced.

In the first embodiment, FIG.
As shown in (B), the electrode of the cream solder 12 in each through hole 10a of the base substrate module 210, the electrode of the cream solder 12 in each through hole 21a of the first memory module 221 and each of the second memory module 222 Through hole 2
Instead of individually connecting the electrodes of the cream solder 12 in 2a with a large number of conductive wires 11, as shown in FIG. 6 (C), the electrodes between the modules are connected in series as another example of a conductor. The connection may be made by one or several conductive wires 53.

That is, the base substrate module 210, the first memory module 221 and the second memory module 2
The two electrodes of the cream solder 12, which are positioned such that the electrodes 22 and 22 overlap each other, that is, the conductive wires 53 are connected to the electrodes of the cream solder 12 in the through holes 22 a of the second memory module 222 and the first memory module. 221 and the cream solder 12 in each through hole 10a of the base board module 210.
Through the electrodes. Next, after being bent in a U-shape, the conductive wire 53 is connected to the electrode of the cream solder 12 in each through hole 10a of the adjacent base substrate module 210 and the cream solder in each through hole 21a of the first memory module 221. 12 electrodes and the second memory module 22
2 through the electrode of the cream solder 12 in each through hole 22a. Next, after bending again into a U-shape, for example, the electrode of the cream solder 12 in each through hole 22a of the adjacent second memory module 222 and the cream solder 12 in each through hole 21a of the first memory module 221 are connected. And each through hole 10a of the base substrate module 210
The electrode of the cream solder 12 in the inside is penetrated. Thus, the electrodes of all the cream solders 12 to be connected are connected.

Then, the cream solder 12 is melted by carrying the module into a reflow furnace and performing a reflow process, or by blowing hot air such as hot air to melt each cream solder 12 and the conductive wire 53. And by completely fixing with the conductive state,
Make a secure electrical connection.

Next, the portion of the conductive wire 53 bent in the U-shape is cut and removed, so that the base substrate 10 and the first and second memory substrates 21 and 22 are vertically overlapped. The electrodes of the three pieces of cream solder 12 can be electrically connected to each other, and can function as a conductive pillar member that allows independent conduction for each of the three connection portions.

According to such a configuration, it is not necessary to prepare a large number of conductive wires 11 in advance, and it is possible to reduce the number of parts to be prepared and to connect a large number of conductive wires 11 one by one. It is easier to connect the continuous conductive wire 53 through the solder 12 than through the solder 12, and the work can be reduced.

In the first embodiment, the base substrate 1
0, the first memory substrate 21 and the second memory substrate 22 may be simultaneously positioned and temporarily fixed. Further, for the temporary fixing, a double-sided adhesive tape can be used instead of the adhesive. Further, the three substrates may be positioned and held using the adhesive force of another member or solder without using an adhesive.

(Second Embodiment) FIG. 7 is a partially sectional side view in a completed state of a small memory card according to a second embodiment of the present invention. In FIG. 7, a conductive ball 71 of copper or the like is used instead of the conductive wire 53.
That is, the conductive ball 71 is interposed between the cream solder 12 in each through hole 10a of the base substrate 10 and the cream solder 12 in each through hole 10a of the first memory substrate 21, and the base substrate 10 and the The first solder substrate 21 is held substantially in parallel with the cream solder 12 in each through hole 21a of the first memory substrate 21 and the cream solder 12 in each through hole 22a of the second memory substrate 22. The first memory substrate 21 and the second memory substrate 22 are held substantially in parallel with conductive balls 71 interposed therebetween. In this case, the outer diameter of the cream solder 12 in each of the through holes 10 a, 21 a, and 22 a is made larger than the diameter of the conductive ball 71, and the conductive ball 71 stably enters the electrode of each cream solder 12 while being slightly inserted. Preferably, it is retained.

As an example of the conductive ball 71, a copper ball having a diameter of 0.3 μm can be used. As a material of the conductive ball 71, in addition to copper, a tin-zinc-based material,
Tin-silver and tin-copper can also be used.

According to the second embodiment, the same operation and effect as those of the first embodiment can be obtained, and the base substrate 1
0, first memory substrate 21, and first memory substrate 2
By interposing the conductive balls 71 between the first and second memory substrates 22, the intervals between the substrates can be easily equalized, and the substrates can be arranged substantially in parallel. Further, if the conductive ball 71 is made of a material having a melting point higher than that of solder such as copper, the conductive ball 71 can be melted in a later step by reflow or air blow.
Is not melted, the spacing between the substrates can be reliably ensured by the conductive balls 71, and the parallelism between the substrates can be maintained with high accuracy. Therefore, since the substrates are supported by the conductive balls 71, the conductive balls 71 are not easily deformed by a mechanical stress. Therefore, parallelism between the substrates can be reliably maintained against thermal stress and mechanical stress, and contact with the adjacent conductive balls 71 can be prevented, thereby preventing short circuit. it can. Further, by reducing the diameter of the conductive balls 71, it is possible to arrange the conductive balls 71 at a narrower pitch, to increase the degree of freedom of wiring, to enable individual wiring to each memory chip 15, and to make the memory chip 15 and the IC chip 13 , 14 can be improved in processing speed.

Hereinafter, a method of manufacturing the small memory card of FIG. 7 will be described.

First, as in the method of manufacturing the small memory card shown in FIG. 1 and the like, FIGS. 4A, 4B and 4
As shown in (C), the first and second memory modules 2
21 and 222 and the base substrate module 210 are manufactured. At this time, although not specifically shown, the card electrode 16 of the small memory card is provided on the lower surface of the base substrate 10.
Are formed, and a chip capacitor 18 and a chip resistor 19 are also mounted on the upper surface of the base substrate 10.

Next, as shown in FIG. 8A, cream solder is supplied to the base substrate module 210 by printing.
That is, a stencil 54 having a through hole corresponding to each through hole 10a of the base substrate 10, that is, a cream solder insertion hole 54a is overlaid on the base substrate 10 of the base substrate module 210, and the cream solder 1 is placed on the stencil 54.
By moving the squeegee 55 while moving 2, the cream solder 12 is inserted from each cream solder insertion hole 54a of the stencil 54 into each through hole 10a of the base substrate 10 so as to be pushed. At this time, in each through hole 10a of the base substrate 10, the cream solder 12 is
From the base substrate 10 in the thickness direction of the base substrate 10. This is because the conductive balls 71 can be stably held on each cream solder 12 by the adhesive force of the cream solder 12 itself in a later step.

Next, as shown in FIG. 8B, conductive balls 71 are supplied one by one onto the electrodes of each cream solder 12 of the base substrate module 210. That is, a conductive ball insertion plate 56 having a through hole corresponding to the cream solder 12 in each through hole 10a of the base substrate 10, that is, a conductive ball insertion hole 56a is attached to the base substrate module 2
10 base substrate 10, preferably cream solder 1
The squeegee 57 is moved while moving a large number of conductive balls 71 on the conductive ball insertion plate 56 so as not to touch the conductive ball insertion plate 2, and the conductive ball insertion holes of the conductive ball insertion plate 56 are moved. The conductive balls 71 are placed one by one on the cream solder 12 in each through hole 10a of the base substrate 10 from 56a. When the conductive balls 71 are placed on the cream solder 12, the conductive balls 71 slightly enter the cream solder 12 due to the pressure from the squeegee 57, and are held in position by the adhesive force of the cream solder 12 itself. In order to surely place one conductive ball 71 on each cream solder 12, the thickness of the conductive ball insertion plate 56 is equal to or slightly smaller than the diameter of the conductive ball 71, and one conductive ball 71 is formed. A plurality of conductive balls 71 do not enter the ball insertion hole 56a, and only one conductive ball 71 enters. As an example, the thickness of the conductive ball insertion plate 56 is set to 0.2 μm, and only one copper ball having a diameter of 0.3 μm is inserted into each conductive ball insertion hole 56a.

Next, as shown in FIG. 8C, the cream solder 12 is dispensed into each through hole 21a of the first memory substrate 21 of the first memory module 221 to be mounted on the base substrate module 210. It is applied and supplied by the above method. This step may be performed simultaneously with the step of FIG. 8B or before the step of FIG. 8B.

Next, as shown in FIG. 9A, the base board module 21 is connected to the conductive balls 71 on the electrodes of the cream solders 12 of the base board module 210.
On the first memory module 221, the first memory module 221 is mounted. That is, in a state where the positioning holes 10z at both ends of the base substrate 10 and the positioning holes 21z at both ends of the first memory substrate 21 are aligned, the conductive balls 71 on each cream solder 12 of the base substrate 10 are The first memory substrate 21 is overlaid on the base substrate 10 so that the cream solder 12 in each of the through holes 21a of the first memory substrate 21 is placed thereon, and a certain pressure is applied to the first memory substrate 21 to cause the first memory The upper part of each conductive ball 71 enters into the cream solder 12 in each through-hole 21a of the circuit board 21. Thus, the base substrate 10 and the first memory substrate 21 are positioned and held substantially in parallel. When the first memory substrate 21 is overlaid on the base substrate 10 and a certain pressure is applied, the upper surface of the base substrate 10 and the lower surface of the two memory chips 15 on the lower surface of the first memory substrate 21 May be bonded by a temporary fixing insulating adhesive 52. The reason why the first memory substrate 21 and the base substrate 10 are substantially parallel to each other is to make the overall size of the small memory card within the standard.

Next, as shown in FIG. 9B, the cream solder 12 is dispensed into each through hole 22a of the second memory substrate 22 of the second memory module 222 to be mounted on the first memory module 221. 51 and the like. This step may be performed simultaneously with the next step in FIG. 10A or after the step in FIG.

Next, as shown in FIG. 10A, the first memory module 22 on the base substrate module 210 is
The conductive balls 71 are supplied one by one onto the electrodes of each cream solder 12 of one first memory substrate 21. That is,
As in FIG. 8B, a conductive ball insertion plate 58 having a through hole corresponding to the cream solder 12 in each through hole 21a of the first memory substrate 21, that is, a conductive ball insertion hole 58a, is connected to the first memory substrate 21. The squeegee 59 is moved on the first memory substrate 21 of the module 221, preferably while not contacting the cream solder 12, while moving a large number of conductive balls 71 on the conductive ball insertion plate 58. Then, each through hole 21a of the first memory substrate 21 is connected to each conductive ball insertion hole 58a of the conductive ball insertion plate 58.
The conductive balls 71 are placed one by one on the cream solder 12 inside. When the conductive balls 71 are placed on the cream solder 12, the pressure from the squeegee 59 slightly enters the cream solder 12, and the conductive balls 71 are held in position by the adhesive force of the cream solder 12 itself. In order to reliably place one conductive ball 71 on each cream solder 12, the thickness of the conductive ball insertion plate 58 is
1 or slightly smaller than the diameter of a plurality of conductive balls 7 in one conductive ball insertion hole 58a.
Keep 1 out.

Next, as shown in FIG.
The first memory module 22 via the conductive balls 71 on the electrodes of each cream solder 12 of the memory module 221
The second memory module 222 is mounted on 1. That is, the first memory substrate is placed in a state where the positioning holes 10z at both ends of the base substrate 10, the positioning holes 21z at both ends of the first memory substrate 21, and the positioning holes 22z at both ends of the second memory substrate 22 are aligned. 21 so that the cream solder 12 in each through hole 22a of the second memory substrate 22 is placed on the conductive ball 71 on each cream solder 12 of FIG.
The second memory substrate 22 is superimposed on the first memory substrate 21 and a certain pressure is applied, so that each conductive ball 71 is placed in the cream solder 12 in each through hole 22 a of the second memory substrate 22. Part of the upper part enters. Thus, the base substrate 10, the first memory substrate 21, and the second memory substrate 22 are positioned and held substantially in parallel. When the second memory substrate 22 is overlaid on the first memory substrate 21 and a certain pressure is applied, the upper surface of the two memory chips 15 on the upper surface of the first memory substrate 21 and the second memory substrate Alternatively, the lower surface of the two memory chips 15 on the lower surface of the use substrate 22 may be adhered to the temporary fixing insulating adhesive 52. The reason why the first memory substrate 21 and the second memory substrate 22 are substantially parallel to each other is to make the overall size of the small memory card within the standard.

Next, each of the cream solders 12 is melted by carrying the module into a reflow furnace and performing a reflow process, or by blowing hot air such as hot air to melt each cream solder 12 and each conductive ball. By firmly fixing the device 71 to a conductive state, it is surely electrically connected.

Next, between the base substrate 10 of the base substrate module 210 and the first memory substrate 21 of the first memory module 221, the first memory substrate 221 of the first memory module 221 and the second memory module 222 The space between the second memory substrate 22 and the space between the two memory chips 15 on the upper surface of the second memory substrate 22 are respectively sealed with an insulating sealing resin 200.

Next, this is accommodated in the upper and lower cases 30, 31 to obtain the small memory card.

The diameter of the conductive ball 71 is determined by the distance between the conductive ball 71 disposed between the base substrate module 210 and the first memory module 221 and the distance between the first memory module 221 and the second memory module 222. 7 may be different from the conductive balls 71 arranged as shown in FIG. 7, but may be the same (not shown).

In the above process, before the first memory module 221 is mounted on the base board module 210, the first memory board 2 of the first memory module 221 is mounted.
The cream solder 12 is supplied into each through hole 21a of the first memory module 221. After the first memory module 221 is mounted on the base substrate module 210, the cream solder 12 is supplied to the first memory substrate 221 of the first memory module 221. The cream solder 12 may be supplied into the inside 21a. Similarly, before the second memory module 222 is mounted on the first memory module 221, the cream solder 12 is supplied into each through hole 22a of the second memory substrate 22 of the second memory module 222. After mounting the second memory module 222 on the first memory module 221,
The cream solder 12 may be supplied into each through hole 22a of the second memory substrate 22 of the second memory module 222.

According to the above manufacturing method, the spacing between the substrates can be easily kept constant by the conductive balls 71, and the parallelism between the substrates can be easily ensured.

In the second embodiment, the conductive balls 71 are not limited to those supplied by printing as described above, and may be supplied by sucking the conductive balls 71 one by one or simultaneously. .

The present invention is not limited to the above embodiment, but can be implemented in other various modes. The following various embodiments will be described.

(Third Embodiment) FIG. 11 shows a third embodiment of the present invention.
FIG. 2 is a partial cross-sectional side view of the small memory card according to the embodiment. In the first and second embodiments, the first memory module 221 and the second memory module 222 are arranged on the base substrate module 210 in an overlapping manner. However, the second memory module 222 is omitted and shown in FIG. like,
Only the first memory module 221 may be arranged on the base substrate module 210 via the conductive wire 11. On the first memory substrate 221 of the first memory module 221, two memory chips 15 are mounted on both upper and lower surfaces thereof, and the lower surfaces of the two memory chips 15 on the lower surface of the first memory substrate 21 are attached to the base substrate. 10 is brought into contact with the upper surface. However, a gap may be formed between the lower surface of the two memory chips 15 on the lower surface of the first memory substrate 21 and the upper surface of the base substrate 10 (not shown). Further, solder or conductive balls may be used instead of the conductive wires 11 (not shown).

With this configuration, the memory chip 15 having a higher capacity can be arranged in a smaller space than the small memory card of FIG. 1 or FIG. 7 as compared with the case where the memory is mounted only on the upper surface of the base substrate 10. Can be.

(Fourth Embodiment) FIG. 12 shows a fourth embodiment of the present invention in which the first memory module 221 is divided into two parts in the small memory card of FIG. That is, the split first memory module 221A and the split first memory module 221B are individually mounted on the base substrate module 210 via the conductive wires 11. The divided first memory module 221A and the divided first memory module 221B are respectively provided on the upper and lower surfaces of the divided first memory substrates 21A and 21B having a size obtained by dividing the first memory substrate 21 into two or smaller. The memory chips 15 are mounted one by one.

According to such a configuration, on the base substrate module 210, the divided first memory module 221
A degree of freedom can be given to the arrangement of A and the divided first memory module 221B. If one memory chip 15 is determined to be defective at the time of burn-in of the memory module on which the memory chip 15 is mounted, the remaining three normal memories are also discarded in the first memory module 221. However, in the split-type first memory module 221A or 221B, the remaining one memory chip 15 is discarded.
5 can be used more efficiently.

(Fifth Embodiment) FIG. 13 shows a fifth embodiment of the present invention.
In the small memory card of FIG. 11 which is a part of the small memory card of the embodiment, the first memory module 22
Instead of mounting the memory chips 15 on both the upper and lower surfaces of the first memory module 1, the first memory substrate 2 of the first memory module 221 is not mounted.
1, two memory chips 15 are mounted on the upper surface, but are not mounted on the lower surface.
The two memory chips 15 are mounted on the upper surface of the device.

(Sixth Embodiment) FIG. 14 shows a sixth embodiment of the present invention.
In the small memory card of FIG. 13 which is a part of the small memory card of the embodiment, the first memory module 22
1, the second memory module 222 mounted on the first memory module 221 also has the second memory substrate 2.
Although two memory chips 15 are mounted only on the upper surface of No. 2,
The third memory module 270 is not mounted on the lower surface, and is further mounted on the second memory module 222. Third memory module 27
In the case of 0, as in the first memory module 221, the two memory chips 15 are mounted only on the upper surface of the third memory substrate 70, but are not mounted on the lower surface.

Preferably, the first memory module 2
If the center positions of the memory chips 15 of the second memory module 222 and the third memory module 270 and the center positions of the IC chips 13 and 14 of the base board module 210 are made to coincide with each other, the whole small memory card is obtained With respect to the longitudinal center of the memory substrate,
It is possible to mount components such as a memory substantially symmetrically, and to counter mechanical stress or thermal stress in a well-balanced manner with respect to the longitudinal center of the memory substrate,
Warpage of each memory substrate having a smaller thickness than that of the base substrate can be prevented.

(Seventh Embodiment) FIG. 15 shows a seventh embodiment of the present invention.
In the small memory card of FIG. 1 and FIG. 7 which is a part of the small memory card of the embodiment, the functions of the two IC chips of the microprocessor IC chip 14 and the ASIC IC chip 13 are combined into one IC chip 60. This is an embodiment in a case where the present invention is applied to a summarized one-chip microcomputer,
An additional memory module 61 is further arranged in an empty space on the lower surface of the base substrate 10 where the IC chip is not mounted. In the additional memory module 61, the memory chips 15 are mounted on the upper and lower surfaces of the fourth memory substrate 24, and the memory substrate 24 itself is mounted on the base substrate 10 by the conductive wires 11 or the like. Thereby, the memory capacity can be further increased. FIG. 101 is a partial cross-sectional side view of a small memory card according to a modification of the seventh embodiment of the present invention.
Is divided into two first memory substrates 21 and 21,
This is an example in which the second memory module 222 is divided into two second memory substrates 22. Note that dividing each module into two or more memory substrates as described above is also applicable to other embodiments.

(Eighth Embodiment) FIG. 16 shows an eighth embodiment of the present invention.
A part of the small memory card according to the embodiment, wherein the memory substrate is not a single layer or a laminated substrate but a thinner film substrate. That is, the film substrate 63 has a rectangular frame shape, and the lead terminals 63a are disposed in the frame portion 63b of the insulating resin. Has been implemented. The space between the film substrates 63 is ensured by a columnar conductive body 62 such as solder. Of course, a conductive ball or wire can be used instead of the columnar conductive body 62 such as solder (not shown). Thus, the memory chips 15 can be directly mounted on both sides of the film substrate 63,
In addition to being smaller and thinner,
It is not necessary to protrude leads largely outside the memory chip 15 and connect them to the base substrate 10 or the like, and it is possible to further reduce the size.

(Ninth Embodiment) FIG. 17 shows a ninth embodiment of the present invention.
Another embodiment in which two film substrates 65, 65 are used in place of the first and second memory substrates 21, 22 and are part of the small memory card of the embodiment,
It is possible to further reduce the thickness. 66 is a film substrate 6
Conductors such as solder or copper balls for making electrical connection between 5, 65 and the base substrate 10.

(Tenth Embodiment) FIG. 18 shows a small memory card according to a tenth embodiment of the present invention, in which a large number of conductive pins 67a such as gold wires are arranged in an insulating synthetic resin sheet. A conductive sheet 67, which is disposed between the electrodes of the memory substrates 21 and 22 or between the electrode of the memory substrate 21 and the electrode of the base substrate 10 so as to be electrically connected and between the two substrates. Interval maintenance can also be used.

[0107] Instead of the conductive pins 67a, a conductive paste may be used. Further, an anisotropic conductive sheet in which conductive particles are disposed in an insulating resin sheet may be used instead of the conductive sheet 67.

(Eleventh Embodiment) FIG. 19 shows a part of a small-sized memory card according to an eleventh embodiment of the present invention, in which the base substrate 10 and the first memory substrate 21 are composed of separate substrates. But one elongated flexible substrate 8
1 is an embodiment composed of FIG. That is, two memory chips 15 are mounted on both surfaces of one end of the elongated flexible substrate 81, and two I / Os are mounted on one surface of the other end.
After mounting the C chip, that is, the IC chip 14 for the microprocessor and the IC chip 13 for the ASIC, as shown in FIG. 19, the chip is bent into a U shape and housed in a case.

In this example, the first memory substrate 21 and the base substrate 10 can be the flexible substrate 81, so that the thickness and weight can be reduced.
Since it is composed of a single substrate, a step of interconnecting a plurality of substrates is not required. Further, the length of the flexible substrate 81 may be further increased to further mount the memory chip 15, so that the second memory substrate 22 may also be used. This example is shown in FIG. 102 as a small memory card according to a modification of the eleventh embodiment of the present invention.

(Twelfth Embodiment) FIG. 20 shows a part of a small memory card according to a twelfth embodiment of the present invention, in which a rectangular parallelepiped electronic component is used instead of a conductive wire or a conductive ball. It is. That is, a passive component, specifically, a rectangular parallelepiped chip electronic component 80 such as a capacitor or a chip resistor, in which the electrodes 80a and 80b on the upper and lower surfaces of each end of each substrate are electrically connected to each other, Base substrate 1
0 electrode and the electrode of the first substrate 21, or between the electrode of the first substrate 21 and the electrode of the second substrate 22, or
A gap between the base substrate 10 and the first memory substrate 21 or the first memory substrate 2
1 and the gap between the second memory board 22 or both gaps are secured by the thickness of the rectangular chip electronic component 80, and the electrodes of the base board 10 and the electrodes of the first memory board 21 or The electrode of the first memory substrate 21 and the electrode of the second memory substrate 22, or the electrode 10d of the base substrate 10, the electrode 21d of the first memory substrate 21, and the electrode of the second memory substrate 22. 22d is connected by the electrodes 80a or 80b on the upper and lower surfaces of at least one end of the rectangular chip electronic component 80. Each end of the rectangular chip electronic component 80 has electrodes 8 continuous with each other over four surfaces, that is, upper and lower surfaces and both side surfaces.
The upper and lower electrodes 80a and 80b are normally electrically connected to each other, and can be used instead of the conductive wire 11 or the conductive ball 71. Note that in FIG.
e and 22e are memory chip mounting areas.

Note that a chip capacitor or chip resistor 80
When using as the original function, the electrodes 8 at both ends are used.
0a and 80b are the electrodes of the base substrate 10 and the electrodes of the first memory substrate 21 or the first memory substrate 21
And the electrode of the second memory substrate 22 are connected. When the chip capacitor or the chip resistor 80 is not used as an original function, the electrode 80 at one end is used.
a or 80b only, the electrode of the base substrate 10 and the first
The electrode of the memory substrate 21 or the electrode of the first memory substrate 21 and the electrode of the second memory substrate 22 are respectively connected.

(Thirteenth and Fourteenth Embodiments) FIGS. 21 and 2
Reference numeral 2 denotes a part of the small memory card according to the thirteenth and fourteenth embodiments of the present invention. As an example of an embodiment in which not only the function of the recording medium but also another function is added to the function as the recording medium, Bluetooth This is an example of a small multi-functional memory card compatible with (Bluetooth). In FIG. 21, instead of mounting the memory on the lower surface side of the first memory substrate 21,
RF LSI chip 78 and baseband LSI chip 7
9 to implement wireless communication. Further, in FIG. 22, an RF LSI chip 78 and a baseband LSI chip 79 are mounted on the upper surface of the base substrate 10 of the small memory card in FIG. 1 so that wireless communication can be performed. For example, by inserting the Bluetooth-compatible multifunctional memory card into a portable device such as a portable telephone, the portable telephone can be used as a download terminal. As a result, music, images, and the like can be downloaded to the mobile phone by wireless communication at a transfer distance of 10 m. In addition, data such as music and images are transferred from one portable device to another portable device (for example, a music player or a digital still camera) into which a Bluetooth-compatible multifunctional memory card is inserted. It is also possible to do. Here, Bluetooth refers to the wireless connection of mobile devices such as mobile phones, personal computers, digital cameras, home appliances such as AV (Audio Visual) devices, game machines, etc., and data such as images and sounds. Wireless data communication technology for exchanging data.

(Fifteenth Embodiment) FIG. 26 is a schematic side view of a small memory card according to a fifteenth embodiment of the present invention. As shown in FIG. 7, the conductive balls 71 are arranged between the base substrate 10 and the first memory
Instead of disposing the conductive balls 71 between the memory substrate 21 and the second memory substrate 22, in this embodiment, the conductive balls 71 penetrating the first memory substrate 21 are used.
By A, the distance between the base substrate 10 and the second memory substrate 22 is maintained. That is,
In the thickness direction of the base substrate 10, one conductive ball 71A is inserted between the base substrate 10 and the first memory substrate 21.
Only the pieces are arranged. Specifically, each conductive ball 71A having a diameter of, for example, about 0.7 μm is made to penetrate the cream solder 12 in each through-hole 21a of the first memory substrate 21 so that the upper part of each conductive ball 71A is In addition to being electrically connected to the cream solder 12 in the through hole 22a of the memory substrate 22, the lower part of each conductive ball 71A is electrically connected to the cream solder 12 in the through hole 10a of the base substrate 10. ing. In this way, the number of conductive balls can be halved compared to the embodiment of FIG.

(Sixteenth Embodiment) FIG. 27 is a plan view of a small memory card according to a sixteenth embodiment of the present invention without the case. 61 and 62 are perspective views of a rectangular memory substrate for a small rectangular memory card, and a perspective view in a state where two rectangular memory chips are mounted on the memory substrate. 86 and 87 show two memory substrates on which the above-mentioned rectangular memory chips are mounted.
It is the exploded perspective view and side view in the state where the case of the small memory card arranged in layers was removed.

As shown in FIGS. 27, 61 and 62, the short side 21x of the rectangular memory substrate 21E for the rectangular small memory card and the long side 15y of the rectangular memory chip 15 are substantially parallel. So that the memory substrate 2
The memory chip 15 is mounted on 1E. In other words, the longitudinal direction of the memory substrate 21E and the memory chip 15
The memory chip 15 is mounted on the memory substrate 21E so that the longitudinal direction thereof intersects, for example, orthogonally. The bonding electrodes 41,..., 41 are arranged in a row along the short side inside each of the pair of opposing short sides 21x, 21x of the memory substrate 21E. The electrodes 10d,..., 10d arranged at corresponding positions on the substrate 10 are joined.

As described above, the electrodes 41,..., 41 are arranged only along the short sides of the rectangular memory substrate 21, and no electrodes are arranged along the long sides. Therefore, even if a stress acts on the long sides 21y, 21y of the rectangular memory substrate 21 due to a twist or the like acting on the rectangular small memory card,
As shown in FIG. 28, electrodes 41,.
Since 1 is not provided, no conduction failure or connection failure occurs, and the reliability can be further improved.

If the bending or torsional strength of the memory substrate 21 on which the memory chips 15,..., 15 are mounted is insufficient as shown in FIG. 29 (A), as shown in FIG. Electrode 15p of memory chip 15 and memory substrate 2
Stress concentrates on the solder joint 12p that joins the first electrode 21p and a crack 12w is generated, and the gap 15p, 21
The junction of p becomes open, resulting in poor electrical connection. Further, as shown in FIG. 29A, a crack 15r is generated in the memory chip 15, which causes an operation failure, in particular, a reading failure or a writing failure of a part of the memory chip 15.

Therefore, the sixteenth embodiment in which the electrodes 41,..., 41 are arranged only along the short sides of the rectangular memory substrate 21 is described.
The bending test and the torsion test are performed on the memory substrate 21 according to the embodiment, and the presence or absence of the above-described problem is examined.

As shown in FIG. 30, in the bending test, the memory substrate 21 on which the memory chips 15,.
By fixing the ends on the short sides on both sides of the memory chip, for example, by applying an external force of 2 kg to the center of the ends on the short sides three times in a direction approaching each other along the longitudinal direction of the memory chip for 60 seconds, This is performed by bending the memory substrate 21. In addition, as shown in FIG.
, 15 are fixed on one short side end of the memory substrate 21 and the other short side end is applied to the one short side end three times with an external force of 3 kg. Perform by twisting. The result of both tests is determined from the state of electrical connection, the state of data writing and reading, and the state of appearance.

As a result of the bending test and the torsion test, the electrode 4 was formed only along the short side 21x of the rectangular memory substrate 21.
, 41 are arranged on the memory substrate 21, cracks may occur due to stress concentration at the solder joints that join the electrodes of the memory chips 15,. No, the connection between the electrodes can be reliably maintained,
The electrical connection can be reliably maintained. In addition, the memory chip 1
, 15 are not cracked, and no operation failure is caused, in particular, no read failure or write failure is caused in a part of the memory chips 15,.

As a modification of the sixteenth embodiment, FIG.
As shown in FIG. 2, two rows of bonding electrodes 41,..., 41 are arranged along the short side 21x inside only one short side 21x of the pair of opposed short sides 21x, 21x of the memory substrate 21F. And may be joined to another memory substrate 21 and the base substrate 10.

As another modified example of the sixteenth embodiment, as shown in FIG. 33, substantially parallel to the short side 21x of the memory substrate 21G and near the center of the long side 21y.
, 41 may be arranged in two rows and joined to another memory substrate 21 and the base substrate 10.

With this configuration, when the two memory chips 15, 15 are arranged on one memory substrate 21, the long sides 15y, 15y, , 41 are arranged along the long side 15y in the vicinity of 15y, and the corresponding electrodes 41,..., 4 of the two memory chips 15, 15, respectively.
The wiring lengths to 1 are substantially equal to each other. Further, the two memory chips 15 and 15 are
C, for example, the microprocessor IC chip 14 or the ASIC IC chip 13 or the microprocessor IC chip 14 and the ASIC IC chip 13
The wiring lengths from the memory substrate 21 to the control IC of the base substrate 10 for connecting the functions of one IC chip to the one-chip microcomputer integrated into one IC chip 60 are substantially equal to each other. As a result, the response speeds of the two memory chips 15, 15 can be made substantially the same. Here, in order to simplify the description, two memory chips 15, 15 are provided on one surface of the memory substrate.
Has been described, but two memory chips 1 are used for each of the front and back surfaces of the memory substrate 21.
The same operation and effect can be obtained also when mounting Nos. 5 and 15. That is, four memory chips 1
, 15 can be made substantially the same.

In the sixteenth embodiment, the modification, and the following embodiments, two memory chips 15, 15 are used for each of the front and back surfaces of the memory substrate 21.
Is described, but the present invention is not limited to this. Two memory chips 15 and 15 are mounted on one of the surfaces, or one memory chip 15 is mounted on one of the surfaces. May be implemented.

(Seventeenth Embodiment) FIG. 34 and FIG.
It is a schematic side view of the memory board above the small memory card concerning a 17th embodiment of the present invention, and a schematic side view of the small memory card in the state where a case was removed.

As the memory substrate 21 below the small memory card according to the seventeenth embodiment of the present invention, the memory substrate 21E of the sixteenth embodiment shown in FIG. 27 is used.
That is, the short side 21x of the rectangular memory substrate 21E for the rectangular small memory card is used as the memory substrate 21E.
And the long side 15y of the rectangular memory chip 15 is substantially parallel to the memory chip 21E.
5 is attached.

As shown in FIG. 34, the short side 21x of the rectangular memory board 21H and the short side 15x of the rectangular memory chip 15L are substantially the same as the upper memory board 21 of the small memory card. The memory chips 15,..., 15 are mounted on the memory substrate 21H so as to be parallel.

These two memory substrates 21E, 21H
, 41 are arranged in a row along a pair of short sides 21x, 21x facing each other. Then, as shown in FIG. 35, by mounting the memory substrate 21E of FIG. 27 on the base substrate 10, and further mounting the memory substrate 21H of FIG. 34 thereon, as shown in FIG. Laminated. At this time,
Upper memory substrate 21H and lower memory substrate 21
Each of the electrodes 41,..., E of the electrode E is disposed along a long side near each of the opposed long sides.
41 and a solder portion 1 as an example of a conductor to be electrically connected
1x,..., 11x. , 41x and 10x,..., 10x of the lower memory substrate 21E and the base substrate 10, respectively.
, 41x are connected to the electrodes 41,..., 41 arranged along the long sides near the opposing long sides, respectively, by solder portions 11x,.

With such a configuration, the base substrate 10
When the longitudinal direction of the memory chips 15,..., 15 mounted on the two memory substrates 21E, 21H stacked on each other intersects, a bending stress or a bending stress acts on the small memory card. , 15 are arranged in the same direction,
The mechanical strength, bending, and torsional strength of the entire small memory card can be further improved.

(Eighteenth Embodiment) FIGS. 36, 37, and 38 show a lower two-layer memory for a small memory card without a case according to an eighteenth embodiment of the present invention. A schematic side view of the substrates 21E, 21E, a schematic side view of a state where the lower two-layer memory substrate is mounted on the base substrate 10, and a lower two-layer memory substrate 21E mounted on the base substrate 10. 21E is a schematic side view showing a state in which a memory board 21J of the uppermost layer is further mounted on 21E.

A memory chip 15t thicker than each memory chip 15 mounted on the lower two-layer memory substrates 21E, 21E according to the eighteenth embodiment of the present invention is replaced with the uppermost memory. Substrate 21J
As in the case of the memory substrate 21E, a total of four are mounted and arranged on both the front and back surfaces as shown in FIG. That is, on the back surface (lower surface) of the uppermost memory substrate 21J, as in the case of the memory substrate 21E, the short side of the rectangular memory substrate 21J and the two rectangular memory chips 15t, 15t having a large thickness are respectively provided. The two memory chips 15t, 15t are mounted on the memory substrate 21J such that the long sides thereof are substantially parallel to each other. In addition, on the top surface (upper surface) of the uppermost memory substrate 21J, the short side 21x of the rectangular memory substrate 21J and the rectangular memory chip 15t whose width (short side) is narrower than the rectangular memory chip 15t on the back surface. The two memory chips 15t,..., 1 are mounted on the memory substrate 21J such that the short sides are substantially parallel to each other.
5t are mounted respectively. Inside the pair of opposing short sides 21x, 21x of the uppermost memory substrate 21J and the lower two layers of memory substrates 21E, 21E, the joining electrodes 41,. 4
1 are arranged in one row, and the electrodes 41, which are arranged at the corresponding positions of the other memory substrate 21E or the base substrate 10,
, 41 or 10x,..., 10x.

With this configuration, the memory chips 15 having the same thickness are provided on the one surface of the base substrate.
,.., 21 are not overlapped with each other. Instead, the module 2 of the memory chips 15,.
1E and 2E are superimposed on each other, and one module 21J of the memory chips 15t,..., 15t having a large thickness is further disposed thereon, so that the mechanical strength, bending and torsion of the small memory card are reduced. Strength can be improved. (Nineteenth Embodiment) FIG. 39 is a schematic side view of a small memory card without a case according to a nineteenth embodiment of the present invention. In the nineteenth embodiment, not only is the memory substrate 21E disposed on the front surface side of the base substrate 10, but also on the rear surface side, similarly to the front surface side of the base substrate 10.
They are arranged. That is, two layers of memory substrates 21E, 21E are stacked on the surface of the base substrate 10. On the other hand, on the back surface of the base substrate 10, a one-layer memory substrate 21E is arranged. , 10x of the base substrate 10 and the electrodes 4 of the one-layer memory substrate 21E on the back surface of the base substrate 10.
, 41 are connected to each other by solder portions 11x,.

With this structure, the modules of the memory chips 15,..., 15 are not arranged only on one surface of the base substrate 10, but the memory chips 15,. Fifteen modules can be arranged, the module arrangement can be balanced, and the mechanical strength, bending, and torsional strength of the small memory card as a whole can be improved.

(Twentieth Embodiment) The twentieth embodiment of the present invention will now be described.
In the small memory card according to the embodiment, between the memory substrate 21E and the upper case 30, the memory substrates 21E and 2
1E, between the memory substrate 21E and the base substrate 10,
By arranging an insulating reinforcing resin, for example, a thermosetting epoxy resin between the memory substrate 21E and the upper case 30, or between the base substrate 10 and the upper case 30, a small memory card can be obtained. The reinforcement can be performed, and in particular, the mechanical strength, bending, and torsional strength of the small memory card can be improved. In the twentieth embodiment, when the insulating reinforcing resin is disposed on the side of the memory chip 15,
Is also injected into the gap between the electrical junctions between the semiconductor substrate and the memory substrate 21 to seal the electrical junctions.
Preferably, the electrical joint is protected.
Therefore, the insulating reinforcing resin preferably has a function as a sealing resin in addition to the reinforcing function.

In the twentieth embodiment, when one layer of the memory substrate 21E is arranged on at least one of the front and back surfaces of the base substrate 10, two layers of the memory substrate 21E are arranged. If there is, the memory substrate 21E
Can be applied when three or more layers are arranged.

More specifically, in the case where one layer of the memory substrate 21E is arranged on the surface of the base substrate 10, the application nozzle 50 as an example of an application device for applying an insulating reinforcing resin is used. An insulating reinforcing resin is applied to one end of the surface on which the chip capacitor 18 and the chip resistor 19 are mounted, as shown in FIG. 40, and the insulating reinforcing portion 44 is formed as shown in FIG. One end reinforcing portion 44a is formed as an example. Further, the memory chip 15 of the memory substrate 21E and the above-mentioned one-end reinforcing portion 44 are provided.
a, and between the adjacent memory chips 15, 15 of the memory substrate 21E, by applying an insulating reinforcing resin by coating or the like, and as shown in FIG.
c, 44c are formed. The uppermost layer reinforcing portions 44c, 44
c is larger than the thickness of the memory chip 15 as shown in FIG. 42 at the time of thermosetting after being applied to a thickness equal to or less than the thickness of the memory chip 15 of the memory substrate 21E. The thickness may be increased to substantially the same height as the upper surface. Alternatively, the uppermost layer reinforcing portion 44c,
44c may be formed by applying a thickness equal to or more than the thickness of the memory chip 15 of the memory substrate 21E before thermosetting. Thereby, the protection function of the memory chip 15 can be increased.

According to this structure, since the one end reinforcing portion 44a is arranged at the one end of the surface of the base substrate 10 where the chip capacitor 18 and the chip resistor 19 are mounted, especially the small memory card Card electrode 1
The mechanical strength, bending, and torsional strength of the portion on the sixth side can be improved. In addition, the uppermost reinforcing portions 44c, 44
c is arranged in the space between the memory chips 15 and 15 of the memory substrate 21E.
The mechanical strength, bending and torsional strength of E can be improved. Further, the thickness of the uppermost layer reinforcing portions 44c, 44c is set so that the memory chips 15 on the front side of the memory substrate 21E,
Since the thickness is larger than the thickness of the memory chips 15, 15A, even when an external force acts on the memory chips 15, 15 from the upper case 30A side, the inner surfaces of the upper case 30A are supported by the uppermost reinforcing portions 44c, 44c. Therefore, an external force is less likely to act on the memory chips 15, and the function of protecting the memory chips 15, 15 can be achieved.

As a first modification of the twentieth embodiment, as shown in FIGS. 43 and 44, the memory substrate 2
On both sides of each memory chip 15 of 1E, an insulating reinforcing resin is supplied by coating or the like to form uppermost reinforcing portions 44c, 44c.
c may be formed. Specifically, between the memory chip 15 of the memory substrate 21E at one end and the above-mentioned one-end reinforcing portion 44a, between the adjacent memory chips 15, 15 of the memory substrate 21E, and the above-mentioned one-end reinforcing. An insulating reinforcing resin is supplied between the memory substrate 21E at the other end opposite to the portion 44a and the electrodes 41,..., 41 at the other end of the memory substrate 21E by coating or the like. Alternatively, the uppermost reinforcing portions 44c, 44c, 44c may be formed. Further, between the memory substrate 21E and the base substrate 10, an insulating reinforcing resin may be supplied by coating or the like to form a layered memory substrate reinforcing portion 44d. This memory substrate reinforcing portion 44d
, 11x of the base substrate 10 are connected to the electrodes 41x,..., 10x of the base substrate 10 so as to cover the periphery of the solder portions 11x,.
It is also designed to protect the electrode junction. Therefore,
One end reinforcing portion 44a, memory substrate reinforcing portion 44d,
The reinforcing portion 44 is constituted by the uppermost layer reinforcing portion 44c. The thickness of the memory substrate reinforcing portion 44d is substantially equal to the thickness of the solder portion 11x, in other words, approximately equal to the gap between the memory substrate 21E and the base substrate 10. Here, 30A is the upper case of the small memory card, and 31A is the lower case of the small memory card.

With this configuration, the memory substrate 21
E between the base substrate 10 and the memory substrate reinforcing portion 44d
Are arranged, the memory substrate 21E and the base substrate 10 are integrated, and the mechanical strength, bending, and torsional strength of the small memory card as a whole can be further improved. Of course, also in this example, the reinforcing effect by the one end reinforcing portion 44a and each uppermost layer reinforcing portion 44c can be obtained.

As a second modified example of the twentieth embodiment, as shown in FIG. 45, a simplified type of the small memory card shown in FIG. The substrate reinforcing portion 44d is a layered second memory substrate reinforcing portion 44e in which the short sides of the electrodes 41,..., 41 are exposed to form the second substrate reinforcing portion 44e and the uppermost layer reinforcing portion. The reinforcing portion 44 may be configured by 44c. Note that the thickness of the layered second memory substrate reinforcing portion 44e is
x, in other words, the memory substrate 21
The gap between E and the base substrate 10 is substantially the same.

With this configuration, the memory substrate 21
Since the three uppermost layer reinforcing portions 44c, 44c, 44c arranged on both sides of each memory chip 15 of E and the second memory substrate reinforcing portion 44e are arranged, the memory substrate 2
1E and the base substrate 10 are substantially integrated, so that the mechanical strength, bending, and torsional strength of the small memory card as a whole can be further improved.

As a third modification of the twentieth embodiment, as shown in FIG. 46, a further simplified form of the small memory card of FIG.
Alternatively, the reinforcing portion 44 may be constituted by only the three uppermost layer reinforcing portions 44c without the second memory substrate reinforcing portion 44e.

With this configuration, the memory substrate 21
Since the uppermost reinforcing portions 44c are arranged on both sides of each of the memory chips 15 on the front side of E, each of the memory chips 15 on the front side of the memory substrate 21E can be protected and reinforced. Mechanical strength, bending, and torsional strength can be further improved.

As a fourth modification of the twentieth embodiment, as shown in FIG. 47, one end reinforcement 44a is added to the small memory card of FIG.
The reinforcing portion 44 may be constituted by 4a and the three uppermost layer reinforcing portions 44c,..., 44c.

With this structure, one end reinforcement 44a is arranged in addition to the three uppermost reinforcements 44c,..., 44c, thereby protecting each memory chip 15 on the front side of the memory substrate 21E. And can be reinforced
The mechanical strength, bending, and torsional strength of the portion on the card electrode 16 side of the small memory card can be improved.

As a fifth modification of the twentieth embodiment, as shown in FIG. 48, in the small memory card of FIG. 45, instead of the layered memory substrate reinforcing portion 44d,
As the rod-shaped memory substrate reinforcing portion 44f, the uppermost layer reinforcing portion 44c and the rod-shaped memory substrate reinforcing portion 44f may constitute the reinforcing portion 44. The thickness of the rod-shaped memory substrate reinforcing portion 44f is substantially equal to the thickness of the solder portion 11x, in other words, approximately equal to the gap between the memory substrate 21E and the base substrate 10.

With this configuration, the memory substrate 21
Since the bar-shaped memory substrate reinforcing portion 44f is disposed below each uppermost layer reinforcing portion 44c across the E, that is, on the base substrate side, the protection and reinforcement of the memory substrate 21 are more stably and surely performed. Therefore, the mechanical strength, bending, and torsional strength of the entire small memory card can be further improved.

As a sixth modification of the twentieth embodiment, as shown in FIG. 49, a simplified type shown in FIG. 46 is used to connect three uppermost layer reinforcing portions 44c,. As the upper layer reinforcing portion 44g, this layered uppermost layer reinforcing portion 4
The reinforcing portion 44 may be constituted by 4 g. It is preferable that the thickness of the layered uppermost reinforcing portion 44g is equal to or greater than the thickness of the memory chip 15 on the front surface side of the memory substrate 21E so that each memory chip 15 can be surely protected and reinforced.

With this configuration, the memory substrate 21
Since one layered uppermost layer reinforcing portion 44g is disposed so as to cover the two memory chips 15, 15 on the front side of E, protection and protection of the two memory chips 15, 15 on the front side of the memory substrate 21E are achieved. Reinforcement can be performed more reliably and reliably, and the mechanical strength, bending, and torsional strength of the entire small memory card can be further improved. In this modification, the one end reinforcement 44a may be additionally provided.

In the following modified example of the twentieth embodiment, a case where two layers of memory substrates 21E are arranged on at least one of the front and back surfaces of the base substrate 10 will be described.

First, as a seventh modification of the twentieth embodiment, as shown in FIG. 50, the uppermost memory substrate 21
The three uppermost reinforcing portions 44c,.
44c, a layered third memory substrate reinforcing portion 44i similar to the layered memory substrate reinforcing portion 44d disposed between the uppermost memory substrate 21E and the lower layer memory substrate 21E, and a lower layer Memory substrate 21E and base substrate 1
0, a layered memory substrate reinforcing portion 44d disposed between
Thus, the reinforcing portion 44 may be configured. The thickness of the layered third memory substrate reinforcing portion 44i is substantially equal to the thickness of the solder portion 11x, in other words, the uppermost memory substrate 21E and the lower memory substrate 2
It is almost equal to the gap with 1E. The layered third memory substrate reinforcing portion 44i is, like the layered memory substrate reinforcing portion 44d, the electrode 4 of the two memory substrates 21E, 21E.
, 41x, which are connected so as to cover the periphery of the solder portions 11x,..., 11x so as to protect the electrode joints.

With this configuration, the three uppermost layer reinforcing portions 44c,..., 44c, the layered third memory substrate reinforcing portion 44i, and the layered memory substrate reinforcing portion 44d are arranged. The two memory substrates 21E, 21E and the base substrate 10 are integrated, and the mechanical strength, bending, and torsional strength of the small memory card as a whole can be further improved.

As an eighth modification of the twentieth embodiment, as shown in FIG. 51, the layered memory substrate reinforcing portion 44d of the small memory card of FIG. Layered second layer 41 is short so as to expose 41
Similarly, the layered third memory substrate reinforcing portion 44i is used as the memory substrate reinforcing portion 44e, and the short-side electrodes 41,.
The fourth memory substrate reinforcing portion 44j may be a layer-like fourth memory substrate shortening portion 44j so as to expose the portion 41. As a result, 3
, 44c, a layered second memory substrate reinforcing portion 44e, and a layered fourth memory substrate reinforcing portion 44j may constitute the reinforcing portion 44.

With this configuration, the three uppermost layer reinforcing portions 44c,..., 44c, the layered second memory substrate reinforcing portion 44e, and the layered fourth memory substrate reinforcing portion 44j are arranged. The two memory substrates 21E, 21
E and the base substrate 10 are integrated, and the mechanical strength, bending, and torsional strength of the small memory card as a whole can be further improved.

As a ninth modification of the twentieth embodiment, as shown in FIG. 52, similar to FIG. 46, the uppermost memory substrate 21E of the two layers of memory substrates 21E, 21E is provided. , Only the three uppermost reinforcing portions 44c,.
4c, the three uppermost reinforcing portions 44
, 44c may constitute the reinforcing portion 44.

According to this structure, the uppermost-layer reinforcing portions 44c are arranged on both sides of each memory chip 15 on the upper surface of the uppermost memory substrate 21E. Can be protected and reinforced, and the mechanical strength, bending and torsional strength of the small memory card can be further improved.

As a tenth modification of the twentieth embodiment, as shown in FIG. 53, similar to FIG.
One small-sized memory card is provided with one end reinforcing portion 44a, and one end reinforcing portion 44a and three uppermost layer reinforcing portions 44a.
, 44c may constitute the reinforcing portion 44.

With this structure, one end reinforcing portion 44a is arranged in addition to the three uppermost layer reinforcing portions 44c,..., 44c, so that each memory chip on the front surface side of the uppermost layer memory substrate 21E is provided. 15 can be protected and reinforced, and the mechanical strength, bending, and torsional strength of the portion on the card electrode 16 side of the small memory card can be improved.

As an eleventh modification of the twentieth embodiment, as shown in FIG. 54, similar to FIG.
In one small memory card, instead of the layered memory substrate reinforcing portions 44e and 44j, the uppermost layer reinforcing portions 44 are formed as rod-shaped memory substrate reinforcing portions 44f and 44k, respectively.
The reinforcing portion 44 may be constituted by c and the bar-shaped memory substrate reinforcing portions 44f and 44k. The thickness of the rod-shaped memory substrate reinforcing portion 44f is substantially equal to the thickness of the solder portion 11x, in other words, approximately equal to the gap between the memory substrate 21E and the base substrate 10. The thickness of the rod-shaped memory substrate reinforcing portion 44k is substantially equal to the thickness of the solder portion 11x, in other words, approximately equal to the gap between the two-layer memory substrates 21E and 21E.

With this configuration, bar-shaped memory substrate reinforcing portions 44f and 44k are arranged below the uppermost reinforcing portions 44c with the two memory substrates 21E and 21E interposed therebetween, that is, on the base substrate side. Therefore, the protection and reinforcement of the two memory substrates 21E, 21E can be performed more stably and reliably, and the mechanical strength, bending, and torsional strength of the entire small memory card can be further improved.

As a twelfth modification of the twentieth embodiment, as shown in FIG. 55, similar to FIG.
, 44c, two simple types
May be connected to form one layered uppermost layer reinforcing portion 44g, and the layered uppermost layer reinforcing portion 44g may constitute the reinforcing portion 44. Note that the thickness of the layered uppermost layer reinforcing portion 44g is equal to or greater than the thickness of the memory chip 15 on the front surface side of the uppermost layer memory substrate 21E.
It is preferable that there is a gap between the inner surface of the memory chip A and the upper case 30A so that each memory chip 15 can be reliably protected and reinforced.

With this configuration, the memory substrate 21
Since one layered uppermost layer reinforcing portion 44g is arranged so as to cover the two memory chips 15, 15 on the front side of E, the two memory chips 15, 15 on the front side of the uppermost memory substrate 21E are arranged. Protection and reinforcement can be performed more reliably and reliably, and the mechanical strength, bending, and torsional strength of the entire small memory card can be further improved.

As a thirteenth modification of the twentieth embodiment, as shown in FIG. 56, an improved type shown in FIG. 55 is formed by connecting three uppermost reinforcing portions 44c,.
The four-layered uppermost layer reinforcement 44g may be brought into contact with the inner surface of the upper case 30A, and the uppermost layer reinforcement 44g may constitute the reinforcement 44. The thickness of the layered uppermost layer reinforcing portion 44g is equal to or larger than the thickness of the memory chip 15 on the front surface side of the uppermost memory substrate 21E, and is set to a size such that it contacts the inner surface of the upper case 30A. Preferably, each memory chip 15 can be reliably protected and reinforced.

With this configuration, the memory substrate 21
One layered uppermost layer reinforcing portion 44g is arranged so as to cover the two memory chips 15, 15 on the front side of E, and
Since the layered uppermost layer reinforcement 44g is in contact with the inner surface of the upper case 30A, the uppermost layer memory substrate 21E is integrated with the upper case 30A by the layered uppermost layer reinforcement 44g. The protection and reinforcement of the two memory chips 15, 15 on the front surface side of the memory substrate 21E can be more stably and reliably performed, and the mechanical strength, bending, and torsional strength of the entire small memory card can be further improved. be able to.

As a fourteenth modification of the twentieth embodiment, as shown in FIG. 57, an improved type shown in FIG. 55 is a single layered top layer connecting three top layer reinforcements 44c,..., 44c. The reinforcing portion 44 may be constituted by a layered uppermost layer reinforcing portion 44g and the one-end reinforcing portion 44a by further adding the one-end reinforcing portion 44a to the reinforcing portion 44g.

With this configuration, the memory substrate 21
One layered uppermost layer reinforcement 44g is disposed so as to cover the two memory chips 15 and 15 on the front side of E, and one end reinforcement 44a is disposed. Two memory chips 1 on the front side of substrate 21E
5, 15 and 15 can be more reliably and reliably protected, and the mechanical strength, bending, and torsional strength of the portion of the small memory card on the card electrode 16 side can be improved. The mechanical strength, bending, and torsional strength of the entire card can be further improved.

As a fifteenth modification of the twentieth embodiment, as shown in FIG. 58, an improved version of FIG.
, 44c, a layered third memory substrate reinforcing portion 44i, and a layered memory substrate reinforcing portion 44d, as well as one end portion reinforcing portion 44a. 44 may be configured.

With this configuration, three uppermost layer reinforcing portions 44c,..., 44c, a layered third memory substrate reinforcing portion 44i, a layered memory substrate reinforcing portion 44d, and one end portion reinforcing portion 44a. Are arranged, the two memory substrates 21E, 21E and the base substrate 10 are integrated, and the mechanical strength, bending,
In addition to improving the torsional strength, the mechanical strength, bending, and torsional strength of the portion of the small memory card on the card electrode 16 side can be improved.

As a sixteenth modification of the twentieth embodiment, as shown in FIGS. 59 and 60, a further improved type of FIG. 58, in which three uppermost reinforcing portions 44c,.
4c, a layered third memory substrate reinforcing portion 44i, a layered memory substrate reinforcing portion 44d, and one end portion reinforcing portion 44a are integrally formed of an insulating reinforcing resin.
May be configured. That is, as shown in a plan view in FIG. 59, a portion along a short side inside a pair of opposite short sides of the base substrate 10 (in other words, the card electrode 1 of the small memory card which is one end side of the base substrate 10)
6 and the other end of the base substrate 10), the wide reinforcing portions 44b, 44b having a large width are formed, and along the long side inside the pair of long sides opposed to each other of the base substrate 10. By forming elongated reinforcing portions 44n, 44n in the portions, the mechanical strength, bending,
And the torsional strength can be further improved.
In particular, the portion along the short side inside the pair of short sides facing each other,
, 41, in the vicinity of the electrodes 41,.
By increasing the width of the reinforcing portions 44b in the vicinity of the electrodes 41, the reinforcement in the vicinity of the electrodes 41,..., 41 can be performed more reliably.

As a seventeenth modification of the twentieth embodiment, as shown in FIGS. 63 and 64, the three uppermost reinforcing portions 44c arranged on the surface of the uppermost memory substrate 21E in FIG. ,..., 44c, three uppermost-layer reinforcing portions 44t,..., 44t, thicker than the uppermost-layer reinforcing portions 44c,.
44t may be arranged. .., 44t, a layered third memory substrate reinforcing portion 44i, and a layered memory substrate reinforcing portion 44t.
The reinforcing portion 44 may be constituted by d.

With this configuration, the three uppermost layer reinforcing portions 44t,..., 44t, the layered third memory substrate reinforcing portion 44i, and the layered memory substrate reinforcing portion 44d are arranged. The two memory substrates 21E, 21E and the base substrate 10 are integrated, and the mechanical strength, bending, and torsional strength of the small memory card as a whole can be further improved. In addition, the three uppermost reinforcing portions 44t,
, 44t are larger than the thicknesses of the memory chips 15, 15 on the front surface side of the memory substrate 21E. Therefore, even if an external force acts on the memory chips 15, 15 from the upper case 30A side, the uppermost layer reinforcing portion is formed. By supporting the inner surface of the upper case 30A with 44t,.
15, the external force is less likely to act on the memory chip 1
5, 15 protection functions can be achieved.

As an eighteenth modified example of the twentieth embodiment, as shown in FIG. 65, three uppermost reinforcing portions 44c,..., Arranged on the surface of the uppermost memory substrate 21E in FIG. Instead of 44c, the uppermost layer reinforcement 44
,..., 44c and each memory chip 15
.., 44t may be arranged. That is, the reinforcing portion 44 may be constituted by three uppermost layer reinforcing portions 44t,..., 44t, a layered second memory substrate reinforcing portion 44e, and a layered fourth memory substrate reinforcing portion 44j. Good.

With this configuration, the three uppermost layer reinforcing portions 44t,..., 44t, the layered second memory substrate reinforcing portion 44e, and the layered fourth memory substrate reinforcing portion 44j are arranged. The two memory substrates 21E, 21
E and the base substrate 10 are integrated, and the mechanical strength, bending, and torsional strength of the small memory card as a whole can be further improved. In addition, three uppermost reinforcing portions 4
Since the thickness of 4t,..., 44t is larger than the thickness of the memory chips 15, 15 on the front surface side of the memory substrate 21E, even if an external force acts on the memory chips 15, 15 from the upper case 30A side, the uppermost layer is formed. By supporting the inner surface of the upper case 30A with the reinforcing portions 44t,..., 44t, an external force is less likely to act on the memory chips 15, 15, and a function of protecting the memory chips 15, 15 can be achieved.

As a nineteenth modification of the twentieth embodiment, as shown in FIG. 66, as shown in FIG. 52, three uppermost reinforcing portions 44c,..., Arranged on the surface of the uppermost memory substrate 21E in FIG. Instead of 44c, the uppermost layer reinforcement 44
,..., 44c and each memory chip 15
, 44t may be arranged so that the three uppermost layer reinforcing portions 44t,..., 44t constitute the reinforcing portion 44.

With this configuration, the uppermost layer reinforcing portions 44t,..., 44t are arranged on both sides of each memory chip 15 on the surface side of the uppermost layer memory substrate 21E. Each memory chip 1 on the front side of 21E
5 can be protected and reinforced, and the mechanical strength, bending, and torsional strength of the small memory card can be further improved. That is, the three uppermost reinforcing portions 44t,
, 44t are larger than the thicknesses of the memory chips 15, 15 on the front surface side of the memory substrate 21E. Therefore, even if an external force acts on the memory chips 15, 15 from the upper case 30A side, the uppermost layer reinforcing portion is formed. By supporting the inner surface of the upper case 30A with 44t,.
15, the external force is less likely to act on the memory chip 1
5, 15 protection functions can be achieved.

As a twentieth modification of the twentieth embodiment, as shown in FIG. 67, as shown in FIG. 54, three uppermost-layer reinforcing portions 44c,..., Arranged on the surface of the uppermost memory substrate 21E. Instead of 44c, the uppermost layer reinforcement 44
,..., 44c and each memory chip 15
The thicker top reinforcements 44t,..., 44t and the rod-like memory substrate reinforcements 44f, 44k may constitute the reinforcement 44.

With this configuration, bar-shaped memory substrate reinforcing portions 44f and 44k are arranged below each uppermost layer reinforcing portion 44c with the two memory substrates 21E and 21E interposed therebetween, that is, on the base substrate side. Therefore, the protection and reinforcement of the two memory substrates 21E, 21E can be performed more stably and reliably, and the mechanical strength, bending, and torsional strength of the entire small memory card can be further improved. Also, the three uppermost reinforcing portions 44t,.
Is larger than the thickness of the memory chips 15, 15 on the front surface side of the memory substrate 21E, even if an external force acts on the memory chips 15, 15 from the upper case 30A side.
By supporting the inner surface of the upper case 30A with the uppermost layer reinforcing portions 44t,..., 44t, an external force is less likely to act on the memory chips 15, 15, and the function of protecting the memory chips 15, 15 can be achieved.

(Twenty-First Embodiment) Next, a twenty-first embodiment of the present invention will be described.
In the small memory card according to the embodiment, the memory chips 15,.
Of the memory chips 15 and
, 15 are pressed and fixed to both front and back surfaces of the memory substrate 21.

This is because the electrodes 2 on the front and back of the memory substrate 21
If the layout of 1p, ..., 21p is shifted,
When the memory chips 15, 15 are respectively press-welded to the front and back surfaces of the memory substrate 21, uneven loads occur,
For example, as shown in the right end joining portion on the front side and the left end portion on the back side in FIG.
And the electrode 15p of the memory chip 15 may be defective.

In order to prevent such a defective connection between the electrodes, as shown in FIG. 69, the positions of the electrodes 15p,... , And the electrode shape is made the same. More specifically, the electrode 2 of the memory substrate 21
The center and land design of 1p,..., 21p have the same position and the same shape. Then, as shown in FIG. 70, the memory chip 1 is mounted on one of the front and back surfaces of the memory substrate 21.
After press-fixing the memory chip 5, as shown in FIG. 71, the memory chip 15 is press-fixed to either of the front and back surfaces of the memory board 21, so that the deformation of the memory board 21 at the time of press-fixing is uniform. To eliminate bonding defects.

As a more specific mounting process, as shown in FIG. 70, the memory chip 15 is pressed and fixed to one of the front and back surfaces of the memory substrate 21. Next, as shown in FIG. 72, the memory substrate 21 and the memory chip 1
5 is filled with an insulating sealing resin 200, and the electrodes 15 are filled.
The electrode junction between p and the electrode 21p is sealed. Then
As shown in FIG. 73, after mounting the memory substrate 21 on the memory substrate mounting stage 49 with the other surface facing upward, a frame-shaped or bar-shaped substrate fixing jig is formed around the memory substrate 21. The memory substrate 21 is pressed against the memory substrate mounting stage 49 by 48 to correct the warpage of the memory substrate 21. In this state, as shown in FIG. 74, the other side of the memory substrate 21 is interposed between the other surface of the memory substrate 21 and the memory chip 15 by the thermocompression bonding tool 47 while an insulating thermosetting resin sheet is interposed therebetween. The surface of the memory chip 15 is pressed and fixed while being heated, and the insulating sealing resin 200 is filled between the memory substrate 21 and the memory chip 15 as shown in FIG.
As shown in (2), the electrode joining portion between the electrode 15p and the electrode 21p is sealed.

In another mounting step, as shown in FIG. 70, the memory chip 15 is temporarily fixed to one of the front and back surfaces of the memory substrate 21. Then, FIG.
As shown in (1), the memory chip 15 is temporarily fixed to either one of the front and back surfaces of the memory substrate 21. Next, as shown in FIG. 76, after the other surface of the memory substrate 21 to which the memory chip 15 is fixed is placed on the thermocompression tool 46 so as to face upward, the thermocompression tool 46 and the thermocompression tool are attached. 47 are simultaneously driven in the direction of approaching each other, so that the memory chips 15 and 15 are simultaneously pressed and fixed to both surfaces of the memory substrate 21 respectively.

Next, an insulating sealing resin 200 is filled between one surface of the memory substrate 21 and the memory chip 15 to seal an electrode joining portion between the electrode 15p and the electrode 21p, An insulating sealing resin 200 is filled between the other surface of the substrate 21 and the memory chip 15 to seal an electrode joining portion between the electrode 15p and the electrode 21p.

With such a configuration, the memory substrate 2
The positions of the memory chips 15,..., 15 arranged on both the front and back surfaces are the same on both the front and back surfaces, so that the memory chips 15,. , The linear expansion coefficients are substantially the same, and the warpage generated on both the front and back surfaces of the memory substrate 21 can be offset, and the warpage of the memory substrate 21 can be greatly reduced or eliminated.

(Twenty-second Embodiment) In a small-sized memory card according to a twenty-second embodiment of the present invention, a bonding portion 11p is arranged between a central portion of a memory substrate 21 and a base substrate 10, and This is intended to prevent warpage and improve the reliability of bending strength.

That is, as shown in FIG. 77, when the memory substrate 21 on which the two memory chips 15 are mounted on both front and back surfaces is mounted on the base substrate 10, the electrodes 41,. , 41 are arranged along each short side near each short side of the memory substrate 21.
The memory substrate 21 is supported by the base substrate 10 only at both ends in the longitudinal direction, and the central portion is in a state where nothing is supported. Therefore, the memory substrate 2
The memory substrate 21 is likely to warp based on the difference between the linear expansion coefficient and the thickness between the base substrate 10 and the base substrate 10. As a result, for example, when the memory substrate 21 is stored between the upper case 30A and the lower case 31A while being warped upward, FIG.
As shown in FIG.
There is a possibility that a crack may occur in the central portion of the upper case 30A due to contact with the inner surface of 0A.

To prevent this, as shown in FIG. 79, FIG. 80 and FIG. 87, a bonding portion 11p is arranged between the central portion of the memory substrate 21 in the longitudinal direction and the base substrate 10, and The space between the memory substrate 2 and the base substrate 10 can be stably maintained constant.
1 to prevent warpage and improve the reliability of bending strength. It is sufficient that the gap between the memory substrate 21 and the base substrate 10 can be kept constant as the joint portion 11p.
The height is substantially the same as that of the solder portion 11x, and may or may not be conductive. The shape of the joint 11p is also ball-shaped,
Any shape such as a rod shape may be used. The number of the joints 11p may be one or two or more as long as the gap between the memory substrate 21 and the base substrate 10 can be stably maintained constant.

Even when the two-layered memory substrates 21 and 21 are mounted on the base substrate 10, as shown in FIGS. 81 and 82, the lower memory substrate 21 and the base substrate
By arranging the joint 11p between the memory substrate 21 and the two-layered memory substrates 21 and 21, the joint 11p is also arranged between the memory substrates 21 and 21 to stabilize the gap between the memory substrate 21 and the base substrate 10. And the gap between the memory substrates 21 and 21 can be stably maintained constant to prevent warpage of the two-layer memory substrates 21 and 21 and reliability of bending strength. Can be improved.

In the above embodiment, the memory substrate 2
Since the electrodes 41,..., 41 are arranged at both ends in the longitudinal direction, the joining portion 11p is arranged at the center where the electrodes 41,. If the electrodes 41,..., 41 are arranged at the center in the longitudinal direction of the memory substrate 21 as shown in FIG. 11p may be arranged respectively. When the electrodes 41,..., 41 are arranged only at one end in the longitudinal direction of the memory substrate 21 as shown in FIG. 32, the other end or the other end of the memory substrate 21 in the longitudinal direction is provided. The joints 11p may be arranged at the center and the center, respectively. Alternatively, electrodes 41,..., 41 that are not electrically connected to another substrate or that do not form a circuit necessary for a small memory card when connected may be arranged as a joint.

(Twenty-third Embodiment) In a small-sized memory card according to a twenty-third embodiment of the present invention, a through-hole 21q is formed in a memory substrate 21 in order to join a circuit formed between the front and back surfaces of the substrate 21 for memory. And the through hole 21 is formed.
A conductor layer 21r is formed on the inner peripheral surface of q, and a synthetic resin resist 21s that covers the conductor layer 21r is disposed. The amount of protrusion of the resist 21s with respect to the memory substrate 21 is substantially the same as the amount of protrusion of the memory chip bonding electrode 21p.

That is, as shown in FIG. 83, the amount of protrusion of the resist 21s on the memory substrate 21 may be larger than the amount of protrusion of another electrode, that is, the memory chip bonding electrode 21p. In such a case, the memory chip 15
Is pressed into contact with the memory substrate 21 when the resist 2
The load acting on the memory substrate 21 becomes non-uniform due to the difference in the amount of protrusion between the 1s and the memory chip bonding electrode 21p. For example, as shown in FIG. As described above, there is a possibility that a bonding failure occurs between the electrode 21p of the memory substrate 21 and the electrode 15p of the memory chip 15.

Then, the resist 21s is polished or the like, as shown in FIG.
Resist 2 having a protrusion amount substantially the same as the protrusion amount of p
Let it be 1t. With this configuration, the protrusion amount of the electrode 15p of the memory chip 15 and the protrusion amount of the resist 21t are substantially the same height, and when the memory chip 15 is pressed and joined to the memory substrate 21, it acts on the memory substrate 21. The load to be applied becomes uniform, and it is possible to prevent the occurrence of a bonding failure between the electrode 21p of the memory substrate 21 and the electrode 15p of the memory chip 15.

As a modification of the above-described twenty-third embodiment, as shown in FIG.
The inside of the 1q conductor layer 21r may be filled with plating or the like to form a plating portion 21u that does not protrude from the opening of the conductor layer 21r. Even in such a configuration, the plating portion 2
Since 1u is smaller than the protruding amount of the electrode 15p of the memory chip 15, when the memory chip 15 is pressed and joined to the memory substrate 21, the load acting on the memory substrate 21 becomes uniform, It is possible to prevent the occurrence of a joint failure between the electrode 21p and the electrode 15p of the memory chip 15.

(Twenty-fourth Embodiment) In a small-sized memory card according to a twenty-fourth embodiment of the present invention, the memory substrate 21
The conductors (such as the conductive wires 11 and 53 and the conductive balls 71 and the like) that electrically connect the substrates
), As shown in FIGS. 95 and 100,
The protruding electrodes 11t,..., 11t are integrally formed on the electrodes 41,. .., 11t are described as being fixed on the electrodes 41,..., 41 of the memory substrate 21 in the manufacturing process.
.., 10 of the base substrate 10 may be fixed.

The height of each protruding electrode 11t is equal to or greater than the thickness of the memory chip 15, and the height of the electrodes 41,
, 41 can be integrally formed with the protruding electrodes 11t by plating.

A method of manufacturing a small memory card using the protruding electrodes 11t,..., 11t will be described below.

First, before describing a method of manufacturing a small memory card using the protruding electrodes 11t,.
For comparison, a method of manufacturing a small memory card that does not use the protruding electrodes 11t,..., 11t will be described.

First, as shown in FIG. 88, cream solder is printed and supplied to the base substrate 10 of the base substrate module 210. That is, each through hole 10a of the base substrate 10
A stencil 54 having a through hole corresponding to the above, that is, a cream solder insertion hole 54a is
The squeegee 55 is moved while moving the cream solder 12 on the stencil 54 so that the cream solder 12 is inserted into each through hole 10a of the base substrate 10 from the cream solder insertion hole 54a of the stencil 54.
Into the electrode 1 as shown in FIG.
The cream solder 12 is arranged on 0x. At this time, in each through-hole 10 a of the base substrate 10, the cream solder 12 slightly protrudes from the base substrate 10 in the thickness direction of the base substrate 10. This is so that the conductive balls (for example, solder balls or copper balls) 71 can be stably held on each cream solder 12 by the adhesive force of the cream solder 12 itself in a later step. Note that cream solder may be supplied by a dispenser instead of printing and supplying.

Simultaneously or thereafter, the cream solder 12 is inserted into the through holes of the memory board 21 in the memory board 21 of the memory board module in the same manner as described above. As shown in FIG. 90, cream solder 12 is arranged on electrode 41. Note that cream solder may be supplied by a dispenser instead of printing and supplying.

Next, as shown in FIG. 91, each cream solder 12 on the memory substrate 21 of the memory substrate module is used.
The conductive balls 71 are supplied one by one onto the electrodes. When the conductive balls 71 are placed on the cream solder 12, the conductive balls 71 slightly enter the cream solder 12,
The position is held by the adhesive force of the cream solder 12 itself.

Next, after turning over as shown in FIG. 92, the base substrate 10 and the memory substrate 21 are arranged such that each cream solder 12 of the base substrate 10 and each conductive ball 71 of the memory substrate 21 correspond to each other. 21 is positioned.
Next, as shown in FIG. 93, the conductive balls 71,.
The memory substrate 21 having the memory substrate 71 is overlaid on the base substrate 10 and a certain amount of pressure is applied so that a part of each conductive ball 71 of the memory substrate 21 is
0 cream solder 12. Thus, the base substrate 10 and the memory substrate 21 are positioned and held substantially in parallel as shown in FIG. Note that FIG.
In FIG. 4, the conductive balls 71 and the electrodes 41 on the side of the memory substrate 21 are embedded in the cream solder 12.

Thus, the protruding electrodes 11t,.
Although a small memory card is manufactured without using 1t, the supply of the conductive balls 71,..., 71 is troublesome, time-consuming, and the pitch between the electrodes 41, 41 is narrower, for example, 0. If the thickness is 3 mm or less, there is a possibility that a short circuit such as the solders 12 contacting each other at the time of joining the substrates will occur. In order to reliably prevent this, it is preferable to use the protruding electrodes 11t,..., 11t. Less than,
A method of manufacturing a small memory card using the protruding electrodes 11t,..., 11t will be described.

First, solder 12 is arranged on each electrode 10x on the base substrate 10 side as in FIGS. 88 and 89.

Next, as shown in FIG. 96, the projecting electrodes 11 are formed on the respective electrodes 41 of the memory substrate 21 by plating or the like.
Form t. Thereafter, as shown in FIG. 97, the memory chips 15,..., 15 are mounted on the memory substrate 21. In the case where the two-layered memory substrate 21 is mounted on the base substrate 10, the lower memory substrate 21 is provided with a protruding electrode 11t on each electrode 41 on both surfaces by plating or the like as shown in FIG. Form.

Next, as shown in FIG. 99, the projecting electrode 11t on each electrode 41 of the memory substrate 21 and the base substrate 1
The base substrate 10 and the memory substrate 21 are positioned so that the 0 electrodes 10x correspond to each other. Next, the memory substrate 21 is superimposed on the base substrate 10 and laminated, and a certain amount of pressure is applied so that a part of each of the protruding electrodes 11t of the memory substrate 21 becomes a cream solder 12 on each of the electrodes 10x of the base substrate 10. Try to get inside. This allows
As shown in FIG. 100, the base substrate 10 and the memory substrate 2
1 are positioned and held substantially in parallel.

According to such a structure, conductive balls 7
1,..., 71 are unnecessary, and the conductive balls 71,.
1 and the time and effort to supply
The pitch between 1, 41 is smaller, for example 0.3
mm or less, the projection electrode 11 of the memory substrate 21
Since the solder 12 only slightly penetrates into the solder 12 of the t-base substrate 10, the solder 12 does not largely flow outside,
It is possible to prevent a short circuit such that the solders 12 come into contact with each other at the time of joining the substrates.

In each of the above embodiments, the base substrate 10
Each through hole 10a, each through hole 2 of the first memory substrate 21
1a and the arrangement of the through-holes 22a of the second memory substrate 22 are in the vicinity of the long side along the longitudinal direction of each substrate, in the vicinity of the short side along the width direction orthogonal to the longitudinal direction of each substrate,
Alternatively, they can be arranged arbitrarily such as a rectangular shape along the vicinity of the long side and the short side.

Further, in each of the above embodiments, each through hole 10a of the base substrate 10, each through hole 21a of the first memory substrate 21, and each through hole 2a of the second memory substrate 22.
The method of supplying solder to 2a may be either a dispenser or printing, and may be another method (not shown).

Further, in each of the above embodiments, a conductive adhesive may be used instead of the cream solder 12. A filler may be added to the conductive adhesive. Normally, it is necessary to heat to 250 ° C. when melting and curing the cream solder 12, but when using a conductive adhesive, 150 ° C. may be sufficient. In such a case, heating is performed. The temperature can be lower than in the case of solder, and the warpage of each substrate can be reduced.

In each of the above embodiments, a conductive wire and a conductive ball may be used in combination. Alternatively, a columnar conductive member such as solder or copper may be used (not shown) instead of, or in addition to, or both of them.

In each of the above embodiments, when a plurality of memory chips 15 are mounted on one of the upper and lower surfaces of each substrate, electrodes are provided between the plurality of memory chips 15 to maintain or reinforce the substrate interval. Insulated or conductive wires, insulated or conductive pillars, or insulated or conductive balls may be arranged on the non-contacting portions (not shown).

In the above embodiments, the conductive wire 1
Instead of 1, a conductive ball 71, a conductor or the above-described rectangular parallelepiped chip electronic component 80 can be used.

In the above embodiment, when a film substrate is used, polyimide or the like can be used as a material of the film substrate, but a single-layer glass epoxy resin substrate having a thickness of about 0.1 mm may be used. it can.

It is to be noted that by appropriately combining any of the above-described various embodiments, the effects of the respective embodiments can be achieved.

[0215]

According to the present invention, a memory module constituted by mounting a plurality of memory chips on a memory substrate is mounted on one surface of the base substrate. A memory board that can mount a memory chip on it can be placed in a small space at a small interval, and the memory chip can be mounted compared to a case where the memory chip is mounted on either side of the base substrate. The area can double the memory capacity of the front and back surfaces of the memory substrate.

Further, by connecting the electrodes between the substrates with conductive wires, the connection strength between the electrodes can be improved.

Further, since each memory chip is directly mounted on each substrate without outer leads, that is, flip chip mounting, in other words, each electrode of each memory chip and each electrode of each substrate are connected via bumps or the like. Since direct bonding is performed, the space and time required to pull out the outer leads to the outside of each memory chip and bond them to each substrate can be saved, and the space can be reduced and the process can be shortened.

Further, since a plurality of memory chips of the same size and thickness can be mounted at exactly the same position on both the front and back surfaces of the memory substrate, when a thermal or mechanical stress acts on the memory substrate, for example, In addition, it is possible to prevent the substrate from being warped to one side due to curing shrinkage of the sealing resin. Further, the plurality of memory chips can be arranged symmetrically with respect to the center in the longitudinal direction of the memory substrate on the memory substrate, thereby preventing stress distribution in the entire memory substrate. be able to.

Further, the memory module on which the memory chip is mounted can be formed separately from the base board as a separate component. If the memory chip is determined to be defective at the time of burn-in, only that memory module must be discarded. Thus, it is not necessary to discard the base substrate on which the IC chip is mounted.

According to the method for manufacturing a small memory card, when there are a plurality of memory modules, before mounting the memory modules on the base substrate module, the memory modules are mounted in advance and the whole memory module is subjected to a burn-in test or the like. In the case of failure, only the memory module needs to be discarded, and it is not necessary to discard the base board module, which is more expensive than the memory module, and the cost can be reduced.

By providing conductive balls between the base substrate and the memory substrate, the intervals between the substrates can be easily made uniform, and the substrates can be arranged substantially in parallel. In addition, if the conductive balls are made of a material having a higher melting point than solder, such as copper, the conductive balls will not melt even when the solder is melted by reflow or air blow in a later process, and the spacing between the substrates will be ensured by the conductive balls. And the parallelism between the substrates can be maintained with high accuracy. Therefore, since the substrates are supported by the conductive balls, the conductive balls are not easily deformed even if a mechanical stress is applied. Therefore, the parallelism between the substrates can be reliably maintained against thermal stress and mechanical stress, and contact with adjacent conductive balls can be prevented, and short circuit can be prevented. . Furthermore, by reducing the diameter of the conductive balls, it is possible to arrange them at a narrower pitch, increasing the degree of freedom in wiring, enabling individual wiring to each memory chip, and processing between the memory chip and the IC chip. Speed can be improved.

[Brief description of the drawings]

FIG. 1 is a schematic perspective view of a small memory card according to an embodiment of the present invention without a case. In addition,
Some conductors have been removed to make it easier to understand the electrodes.

FIG. 2 is a side view of the small memory card of FIG. 1;

FIG. 3 is a partial cross-sectional side view in a completed state of the small memory card of FIG. 1; However, for easier understanding, a connection portion between the memory chip and the substrate and a case are shown in cross section.

FIGS. 4A, 4B, and 4C are each a part of a step of manufacturing a base substrate module, a first memory module, and a second memory module in the method of manufacturing the small memory card of FIG. 1; It is explanatory drawing of a cross section.

5 (A), (B), (C) and (D) show the method of manufacturing the small memory card of FIG. 1, respectively, in which the base substrate module, the first memory module and the second memory module are cream soldered. FIG. 5 is an explanatory view of a partial cross-section of a step of applying, and a partial cross-sectional view of a step of temporarily fixing a first memory module and a second memory module.

6 (A), (B), and (C) show the first temporarily fixed first memory card in the method of manufacturing the small memory card of FIG.
A step of temporarily fixing the memory module and the second memory module to the base substrate module, a step of individually connecting the electrodes between the modules with conductive wires, and a step of connecting the electrodes between the modules as another example of a conductor. It is explanatory drawing of a partial cross section of the process of connecting with a conductive wire.

FIG. 7 is a partial cross-sectional side view in a completed state of a small memory card according to a second embodiment of the present invention. However, for easier understanding, a connection portion between the memory chip and the substrate and a case are shown in cross section.

8 (A), (B) and (C) show steps of printing and supplying cream solder to the base substrate module in the method of manufacturing the small memory card of FIG. 7, respectively, FIG. 9 is an explanatory diagram of a partial cross section of a step of supplying conductive balls one by one and a step of applying cream solder to a first memory module.

9A and 9B respectively show a method of manufacturing the small memory card of FIG. 7 in which the first memory module is mounted on the base substrate module via conductive balls on each cream solder electrode of the base substrate module. Mounting process,
It is explanatory drawing of a partial cross section of the process of applying cream solder to a 2nd memory module.

FIGS. 10A and 10B show a step of supplying conductive balls one by one on each cream solder electrode of the first memory module on the base substrate module in the method of manufacturing the small memory card of FIG. 7; And the first via the conductive balls on each cream solder electrode of the first memory module.
FIG. 9 is an explanatory diagram of a partial cross section of a step of mounting the second memory module on the memory module.

FIG. 11 is a partial cross-sectional side view of a small memory card according to a third embodiment of the present invention.

FIG. 12 is a partial cross-sectional side view of a small memory card according to a fourth embodiment of the present invention.

FIG. 13 is a partial cross-sectional side view of a small memory card according to a fifth embodiment of the present invention.

FIG. 14 is a partial cross-sectional side view of a small memory card according to a sixth embodiment of the present invention.

FIG. 15 is a partial cross-sectional side view of a small memory card according to a seventh embodiment of the present invention.

FIG. 16 is a partial cross-sectional side view of a small memory card according to an eighth embodiment of the present invention.

FIG. 17 is a partial cross-sectional side view of a small memory card according to a ninth embodiment of the present invention.

FIG. 18 is a partial cross-sectional side view of a small memory card according to a tenth embodiment of the present invention.

FIG. 19 is a partial cross-sectional side view of a small memory card according to an eleventh embodiment of the present invention.

FIG. 20 is a partial cross-sectional side view of a small memory card according to a twelfth embodiment of the present invention.

FIG. 21 is a partial cross-sectional side view of a small memory card according to a thirteenth embodiment of the present invention.

FIG. 22 is a partial cross-sectional side view of a small memory card according to a fourteenth embodiment of the present invention.

FIG. 23 is an exploded perspective view of a small memory card which is the basis of the small memory card according to each embodiment of the present invention.

FIG. 24 is a partial cross-sectional side view of the small memory card of FIG. 23;

FIG. 25 is a bottom view of the small memory card of FIG. 23;

FIG. 26 is a schematic side view of a small memory card according to a fifteenth embodiment of the present invention.

FIG. 27 is a schematic side view of a small memory card according to a sixteenth embodiment of the present invention without a case;

FIG. 28 is a schematic plan view of a comparative example in which electrodes are arranged along long sides of a memory substrate.

FIGS. 29A and 29B are comparative examples in which the longitudinal direction of the memory chip is arranged along the long side of the memory substrate, and show a state in which the memory chip is cracked. FIG. 2 is a schematic plan view showing the semiconductor device, and a schematic side view showing a state in which stress is concentrated on a soldered joint for joining the electrode of the memory chip and the electrode of the memory substrate to cause cracks.

FIG. 30 is an explanatory diagram of a bending test.

FIG. 31 is an explanatory diagram of a torsion test.

FIG. 32 is a schematic plan view of a memory substrate according to a modification of the sixteenth embodiment.

FIG. 33 is a schematic plan view of a memory substrate according to another modification of the sixteenth embodiment.

FIG. 34 is a schematic side view of an upper memory substrate of a small memory card according to a seventeenth embodiment of the present invention.

FIG. 35 is a schematic side view of a small memory card according to a seventeenth embodiment of the present invention without the case of the small memory card.

FIG. 36 is a schematic side view of a lower two-layer memory substrate without a case according to an eighteenth embodiment of the present invention, with a case removed.

FIG. 37 is a schematic side view of the eighteenth embodiment of the present invention in a state where a lower two-layer memory substrate is mounted on a base substrate, excluding a case;

FIG. 38 is a schematic side view of a small memory card without a case according to an eighteenth embodiment of the present invention, further showing a memory board on the lower two layers mounted on a base board; It is a schematic side view in the state where the memory board of the upper layer was mounted.

FIG. 39 is a schematic side view of a small memory card without a case according to a nineteenth embodiment of the present invention.

FIG. 40 is a schematic side view showing a state where an insulating reinforcing resin is applied by a coating nozzle to a small memory card without a case according to the twentieth embodiment of the present invention.

FIG. 41 is a schematic side view of a small memory card without a case according to a twentieth embodiment of the present invention.

FIG. 42 is a schematic side view of a small memory card without a case according to a twentieth embodiment of the present invention.

FIG. 43 is a schematic plan view of a memory substrate according to a first modification of the twentieth embodiment.

FIG. 44 is a schematic side view of a partial cross section of a small memory card of a first modification of the twentieth embodiment.

FIG. 45 is a schematic side view of a partial cross section of a small memory card of a second modification of the twentieth embodiment.

FIG. 46 is a schematic side view of a partial cross section of a small memory card of a third modification of the twentieth embodiment.

FIG. 47 is a schematic side view of a partial cross section of a small memory card of a fourth modification of the twentieth embodiment.

FIG. 48 is a schematic side view of a partial cross section of a small memory card of a fifth modification of the twentieth embodiment.

FIG. 49 is a schematic side view of a partial cross section of a small memory card of a sixth modification of the twentieth embodiment.

FIG. 50 is a schematic side view of a partial cross section of a small memory card of a seventh modification of the twentieth embodiment.

FIG. 51 is a schematic side view of a partial cross section of a small memory card of an eighth modification of the twentieth embodiment.

FIG. 52 is a schematic side view of a partial cross section of a small memory card of a ninth modification of the twentieth embodiment.

FIG. 53 is a schematic side view of a partial cross section of a small memory card of a tenth modification of the twentieth embodiment.

FIG. 54 is a schematic side view of a partial cross section of a small memory card of an eleventh modification of the twentieth embodiment.

FIG. 55 is a schematic side view of a partial cross section of a small memory card of a twelfth modification of the twentieth embodiment.

FIG. 56 is a schematic side view of a partial cross section of a small memory card of a thirteenth modification of the twentieth embodiment.

FIG. 57 is a schematic side view of a partial cross section of a small memory card of a fourteenth modification of the twentieth embodiment.

FIG. 58 is a schematic side view of a partial cross section of a small memory card of a fifteenth modification of the twentieth embodiment;

FIG. 59 is a schematic plan view of a small memory card of a sixteenth modification of the twentieth embodiment.

FIG. 60 is a schematic side view of a partial cross section of a small memory card of a sixteenth modification of the twentieth embodiment.

FIG. 61 is a perspective view of a rectangular memory substrate for a rectangular small memory card of the sixteenth embodiment.

62 is a perspective view showing a state in which two rectangular memory chips are mounted on the memory substrate of FIG. 61.

FIG. 63 is a schematic plan view of a memory substrate of a small memory card according to a seventeenth modification of the twentieth embodiment of the present invention.

FIG. 64 is a schematic side view of a partial cross section of a small memory card according to a seventeenth modification of the twentieth embodiment of the present invention;

FIG. 65 is a schematic side view of a partial cross section of a small memory card according to an eighteenth modification of the twentieth embodiment of the present invention;

FIG. 66 is a schematic side view of a partial cross section of a small memory card according to a nineteenth modification of the twentieth embodiment of the present invention;

FIG. 67 is a schematic side view of a partial cross section of a small memory card according to a twentieth modification of the twentieth embodiment of the present invention.

FIG. 68 is an explanatory diagram of a problem for explaining the small memory card according to the twenty-first embodiment of the present invention.

FIG. 69 is a schematic side view of a memory substrate of a small memory card according to a twenty-first embodiment of the present invention.

FIG. 70 is a schematic side view showing a state in which a memory chip is mounted on one surface of a memory substrate of a small memory card according to a twenty-first embodiment of the present invention.

FIG. 71 is a schematic side view of a small memory card according to a twenty-first embodiment of the present invention with memory chips mounted on both front and back surfaces of a memory substrate.

FIG. 72 is a schematic side view of a partial cross section in a state in which a memory chip is mounted on one surface of a memory substrate of a small memory card according to a twenty-first embodiment of the present invention, and then an electrode joining portion is sealed with a sealing resin. FIG.

FIG. 73 is a schematic side view of a partial cross section showing a state where a memory chip is mounted on the other surface of the memory substrate of the small memory card, following FIG. 72;

FIG. 74 is a schematic side view showing a partial cross section of a state where a memory chip is mounted on the other surface of the memory substrate of the small memory card, following FIG. 73;

75 is a schematic side view of a partial cross section of a memory substrate of a small memory card manufactured through the process of FIG. 74.

76 is a schematic side view of a state in which memory chips are mounted on both surfaces of a memory substrate of a small memory card by a method different from that of FIGS. 73 and 74. FIG.

FIG. 77 is an explanatory diagram showing a state in which the memory substrate before the case is stored is warped to explain the problem of the small memory card according to the twenty-second embodiment of the present invention.

FIG. 78 is an explanatory diagram showing a state in which the memory substrate after the case is stored is warped, for explaining the problem of the small memory card according to the twenty-second embodiment of the present invention.

FIG. 79 is an explanatory view for explaining a small-sized memory card according to a twenty-second embodiment of the present invention, showing a state in which a gap between a one-layer memory substrate and a base substrate before a case is stored is kept constant; .

FIG. 80 is an explanatory view showing a state in which the gap between the one-layer memory substrate and the base substrate after housing the case is held constant for explaining the small-sized memory card according to the twenty-second embodiment of the present invention; .

FIG. 81 is a view illustrating a small-sized memory card according to a twenty-second embodiment of the present invention. FIG. 4 is an explanatory diagram showing a state held in the first embodiment.

FIG. 82 is a view illustrating a small-sized memory card according to a twenty-second embodiment of the present invention, in which a gap between two layers of memory boards and a gap between a lower memory board and a base board after being stored in a case are constant. FIG. 4 is an explanatory diagram showing a state held in the first embodiment.

FIG. 83 is a partial cross-sectional side view showing a state in which the amount of protrusion of the resist on the memory substrate is larger than the amount of protrusion of the electrode for bonding a memory chip;

FIG. 84 is a partial cross-sectional side view showing a memory substrate of a small-sized memory card according to a twenty-third embodiment of the present invention.

FIG. 85 is a partial cross-sectional side view showing a memory substrate of a small memory card according to a modification of the twenty-third embodiment of the present invention.

FIG. 86 is an exploded perspective view of a small memory card according to a sixteenth embodiment of the present invention without a case;

87 is a side view of the small memory card of FIG. 86 without a case.

FIG. 88 is an explanatory diagram showing a step of a method for manufacturing a small memory card which does not use projecting electrodes in the embodiment of the present invention.

89 is an explanatory view, following FIG. 88, showing the steps of the method for manufacturing a small-sized memory card which does not use a protruding electrode in the embodiment of the present invention. FIG.

FIG. 90 is an explanatory view, following FIG. 89, showing the steps of the method for manufacturing a small memory card which does not use projecting electrodes in the above embodiment of the present invention.

FIG. 91 is an explanatory view, following FIG. 90, showing the steps of the method for manufacturing a small memory card which does not use projecting electrodes in the embodiment of the present invention.

FIG. 92 is an explanatory view, following FIG. 91, showing the steps of the method for manufacturing a small memory card which does not use projecting electrodes in the embodiment of the present invention.

FIG. 93 is an explanatory view following FIG. 92 showing the steps of the method for manufacturing a small memory card that does not use projecting electrodes in the embodiment of the present invention.

FIG. 94 is an explanatory view following FIG. 93 showing the steps of the method for manufacturing a small memory card which does not use projecting electrodes in the embodiment of the present invention.

FIG. 95 is an exploded perspective view of a small memory card according to a twenty-fourth embodiment of the present invention.

FIG. 96 is an explanatory view showing a step of the method for manufacturing the small memory card according to the twenty-fourth embodiment of the present invention;

FIG. 97 is an explanatory view following FIG. 96 showing steps of a method for manufacturing a small memory card according to the twenty-fourth embodiment of the present invention;

FIG. 98 is an explanatory view, following FIG. 97, showing the steps of the method for manufacturing a small memory card according to the twenty-fourth embodiment of the present invention.

FIG. 99 is an explanatory view following FIG. 98 showing steps of a method for manufacturing a small memory card according to the twenty-fourth embodiment of the present invention;

FIG. 100 is an explanatory view following FIG. 99 showing the steps of the method for manufacturing a small memory card according to the twenty-fourth embodiment of the present invention;

FIG. 101 is a partial cross-sectional side view of a small memory card according to a modification of the seventh embodiment of the present invention.

FIG. 102 is a partial cross-sectional side view of a small memory card according to a modification of the eleventh embodiment of the present invention.

[Explanation of symbols]

Reference numeral 10: base substrate, 10a: through hole, 10d: electrode, 1
0x: electrode, 10z: positioning hole, 11: conductive wire, 11p: joining part, 11t: projecting electrode, 11x: solder part, 12: cream solder, 13: ASIC IC chip, 14: microprocessor IC chip, 15: memory chip, 15p: electrode, 15x: short side, 15y: long side, 16: card electrode, 18: chip capacitor, 19
... Chip resistors, 21, 21C ... First memory substrate, 21
A, 21B: first divided memory substrate, 21a: through hole,
21d: electrode, 21e: memory chip mounting area, 2
1x: short side, 21y: long side, 21z: positioning hole, 2
2, 22A: second memory substrate, 22a: through hole, 22
d: electrode, 22e: memory chip mounting area, 22z
... Positioning holes, 24 ... Fourth memory substrate, 30A ... Upper case, 31A ... Lower case, 41 ... Electrode, 44 ... Insulating reinforcement, 44a ... One end reinforcement, 44b ... Wide reinforcement, 44c ... Uppermost layer reinforcement, 44d: memory substrate reinforcement, 44e: second memory substrate reinforcement, 44f: rod-shaped memory substrate reinforcement, 44g: layered uppermost layer reinforcement, 4
4i: Layered third memory substrate reinforcement, 44j: Layered fourth memory substrate reinforcement, 44k: Bar-shaped memory substrate reinforcement, 44n: Slender reinforcement, 50: Application nozzle, 5
DESCRIPTION OF SYMBOLS 1 ... Dispenser, 52 ... Temporary fixing adhesive, 53 ... Conductive wire, 54 ... Stencil, 54a ... Cream solder insertion hole, 55 ... Squeegee, 56 ... Plate for conductive ball insertion,
56a: conductive ball insertion hole, 57: squeegee, 58 ...
Conductive ball insertion plate, 58a ... conductive ball insertion hole,
59 squeegee, 60 IC chip, 61 additional memory module, 62 columnar conductor, 63 film substrate, 63a lead terminal, 63b frame, 65 film substrate, 66 conductor, 67 Conductive sheet, 67a conductive pin, 68 conductive body, 70 third memory substrate, 7
1, 71A: conductive ball, 75: solder, 78: LSI chip for RF, 79: baseband LSI chip, 80
... Chip components, 80a, 80b ... Electrode, 81 ... Flexible substrate, 110 ... Substrate, 113 ... IC chip for ASIC, 114 ... IC chip for microprocessor, 115
... memory chip, 116 ... electrode, 118 ... chip capacitor, 119 ... chip resistor, 130 ... upper case, 131
... lower case, 131a ... electrode opening, 132 ... switch for write protection, 200 ... sealing resin, 210
... Base board module, 221 first memory module, 222 second memory module, 270 third memory module

Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat II (Reference) H05K 1/14 H01L 25/04 Z 1/18 (72) Inventor Michiro Yoshino 1006 Kazuma Kazuma, Kadoma, Osaka Matsushita Electric Industrial Incorporated (72) Inventor Kenichi Yamamoto 1006 Kadoma, Kazuma, Osaka Prefecture Matsushita Electric Industrial Co., Ltd.F-term (reference) CC52 CC53 CC58 EE01 GG14 5E338 AA01 AA02 AA12 AA16 BB72 BB75 CC01 CD33 EE26 5E344 AA01 AA16 AA19 AA21 BB01 BB04 BB05 BB07 BB13 CC23 CD09 CD12 CD27 DD02 EE16

Claims (36)

[Claims] A memory substrate (21, 22, 70, 6)
3, 65) and a plurality of memory chips (221) mounted thereon.
0) is mounted on one surface of the base substrate (10), and IC chips (13, 14, 60) for controlling the operation of the plurality of memory chips are mounted on the other surface of the base substrate. A card-type recording medium accommodated in a package (30, 31). 2. The memory module (221, 222, 270) according to claim 1, wherein the memory chips (15) are mounted on both front and back surfaces of the memory substrate (21, 22), respectively. Card type recording medium. 3. The memory module (221, 22)
2, 270) includes a plurality of memory modules (221, 221).
3. The card-type recording medium according to claim 1, wherein said memory chip is mounted on each memory substrate of each memory module. 4. The card-type recording medium according to claim 1, wherein said memory chip is mounted on said one surface of said base substrate. 5. Between the electrodes of the memory substrate (21, 22) and the electrodes of the base substrate (10), the electrodes of the memory substrate and the electrodes of the base substrate are connected to the memory of the base substrate. Conductors (11, 53, 71, 71A, 68, 62, 62) electrically connected in a direction orthogonal to the mounting substrate mounting surface.
The card type recording medium according to any one of claims 1 to 4, wherein the card type recording medium is electrically connected by (66, 67a). 6. The memory substrate (21, 22, 7)
0), the conductors (11, 53, 7) electrically connecting the electrodes of the memory substrate adjacent to each other in a direction orthogonal to the memory chip mounting surface of the memory substrate.
4. The card-type recording medium according to claim 3, wherein the card-type recording medium is electrically connected to the card type recording medium. 7. The conductor according to claim 1, wherein the conductor is a conductive wire (11,5).
The card-type recording medium according to claim 5 or 6, wherein 3). 8. The memory module (221, 22)
2, 270) includes a first memory module (221) and a second memory module (222), and the first memory module (221) is provided on the base substrate.
Is mounted, the second memory module is mounted on the first memory module, and the memory chip is mounted on each memory substrate of each memory module, while the electrode of the base substrate is connected to the first memory module. The electrode of the memory substrate of the memory module and the electrode of the memory substrate of the second memory module are electrically connected by one conductive wire (11, 53).
5. The card-type recording medium according to any one of items 4 to 4. 9. The conductive material comprises conductive balls (71, 71).
The card-type recording medium according to claim 5 or 6, which is A). 10. The conductor is made of an insulating resin sheet (6).
7. The card-type recording medium according to claim 5, wherein the card-type recording medium is a conductive pin (67a) disposed in (7). 11. The electronic device according to claim 5, wherein the conductor is a rectangular parallelepiped electronic component in which electrodes on upper and lower surfaces of each end are electrically connected to each other.
2. A card-type recording medium according to claim 1. 12. The card according to claim 1, wherein the plurality of memory chips are symmetrically arranged on the memory substrate with respect to a longitudinal center of the memory substrate. Type recording medium. 13. A mounting wherein at least one memory chip is mounted on both sides of the memory substrate, and the positions of the memory chips mounted on both sides of the memory substrate are the same. Claims 1-1
3. The card-type recording medium according to any one of 2. 14. The card-type recording medium according to claim 1, wherein a memory chip is mounted on the other surface of the base substrate. 15. An RF LSI chip (78) and a baseband LS are provided on the memory substrate or the base substrate.
An I chip (79) is mounted.
3. The card-type recording medium according to any one of 3. The memory substrate is a film substrate (6).
The card-type recording medium according to any one of claims 1 to 15, which is (3, 65). 17. The card-type recording medium according to claim 1, wherein said memory substrate and said base substrate are a single film substrate. 18. A method for manufacturing a card-type recording medium according to claim 1, wherein the memory substrate is provided on the one surface of the base substrate. After stacking, the electrode of the base substrate and the electrode of the memory substrate are
Conductors (11, 53, 71, 71A, 6A) electrically connected in a direction perpendicular to the memory substrate mounting surface of the base substrate.
8, 62, 66, 67a). 19. A method for manufacturing a card-type recording medium according to claim 3, wherein the one memory substrate is overlaid on the one surface of the base substrate, After stacking the other one memory substrate on the one memory substrate, the electrodes of the base substrate and the electrodes of the plurality of memory substrates are mounted on the memory substrate mounting surface of the base substrate. Conductors (11, 53, 71, 71) electrically connected in a direction orthogonal to
A, 68, 62, 66, 67a). 20. The method according to claim 10, wherein the conductor is a conductive wire (11,5).
20. The method for manufacturing a card-type recording medium according to claim 18 or 19, which is 3). 21. Connecting the electrodes of the base substrate and the electrodes of the plurality of memory substrates to one conductive wire (11, 5).
20. The method for manufacturing a card-type recording medium according to claim 19, wherein the card-type recording medium is electrically connected in 3). 22. A method according to claim 19, wherein the conductor comprises conductive balls (71, 7).
20. The method for producing a card-type recording medium according to claim 18 or 19, which is 1A). 23. The memory module (221, 22)
2,270) comprises a first memory module (221) and a second memory module (222), wherein the conductors are:
A conductive ball (71A) penetrating a through hole (21a) functioning as an electrode of the memory substrate (21) of the first memory module (221), and an upper portion of the conductive ball (71A) The lower part of the conductive ball (71A) is electrically connected to the electrode of the base substrate (10) of the base substrate module (210). The card-type recording medium according to claim 5, wherein the card-type recording medium is electrically connected. 24. The memory substrate is rectangular, and the memory chip is rectangular. A long side (15y) of the rectangular memory chip is at least one short side (21x) of the rectangular memory substrate. ), And along the short side, an electrode (4) of the memory substrate connected to the electrode (10x) of the base substrate.
The card-type recording medium according to any one of claims 1 to 17, wherein 1) is arranged. 25. A plurality of the memory chips are provided on one surface of the memory substrate, and the plurality of memory chips are provided on the one surface of the memory substrate and between the plurality of memory chips. 25. The card-type recording medium according to claim 24, wherein an electrode (41) connected to the electrode (10x) of the base substrate is arranged substantially in parallel with the side. 26. The memory module, comprising: a plurality of stacked memory modules (221, 222, 270), and a memory chip disposed on a memory substrate of one of the plurality of memory modules. The longitudinal direction of (15) intersects the longitudinal direction of a memory chip (15) arranged on a memory substrate of the other memory module of the plurality of memory modules. , One of 25
13. A card-type recording medium according to 27. The memory module, comprising: a plurality of stacked memory modules (221, 222, 270), and a memory chip disposed on a memory substrate of an upper one of the plurality of memory modules. The thickness of (15) is larger than the thickness of a memory chip (15) arranged on a memory substrate of a lower memory module of the plurality of memory modules. 27. The card-type recording medium according to any one of 25 and 26. 28. A memory module comprising a plurality of memory chips (15) mounted on a memory substrate (21) on the other surface of the base substrate. 28. The card-type recording medium according to any one of 24 to 27. 29. A reinforcing portion (44d, 4d) of an insulating reinforcing resin disposed between the memory substrate and the base substrate.
4e) further comprising 4e).
29. The card-type recording medium according to any one of -28. 30. A reinforcing portion (4) of an insulating reinforcing resin disposed between the memory substrates of the plurality of memory modules.
4i, 44j).
7. The card-type recording medium according to any one of 7, 24 to 29. 31. A reinforcing portion of an insulating reinforcing resin disposed between the inner surface of the package and the memory substrate.
c, 44t).
7. The card-type recording medium according to any one of 7, 24 to 30. 32. A reinforcing portion (44a) of an insulating reinforcing resin disposed between the inner surface of the package and the base substrate.
31. The apparatus according to claim 1, further comprising:
The card-type recording medium according to any one of the above. 33. The semiconductor device according to claim 29, wherein the thickness of the insulating reinforcing resin is equal to or greater than the thickness of the memory chip.
The card-type recording medium according to any one of the above. 34. At least one memory chip is mounted on each side of the memory substrate, and the positions of the memory chips mounted on both sides of the memory substrate are substantially the same and are shaped. 14. The card-type recording medium according to claim 13, wherein are substantially the same. 35. The memory device according to claim 1, further comprising a joint (11p) between the memory substrate and the base substrate for keeping a constant interval therebetween. 2. A card-type recording medium according to claim 1. 36. One of the electrode (10x) of the base substrate and the electrode (41) of the memory substrate, further comprising a protruding electrode (11t) for joining the two electrodes. The card-type recording medium according to any one of 17, 24 to 35.