JP2002203953A - Solid image pickup element, and its manufacturing method - Google Patents
Solid image pickup element, and its manufacturing methodInfo
- Publication number
- JP2002203953A JP2002203953A JP2001000653A JP2001000653A JP2002203953A JP 2002203953 A JP2002203953 A JP 2002203953A JP 2001000653 A JP2001000653 A JP 2001000653A JP 2001000653 A JP2001000653 A JP 2001000653A JP 2002203953 A JP2002203953 A JP 2002203953A
- Authority
- JP
- Japan
- Prior art keywords
- film
- photosensor
- light
- reflection film
- solid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は固体撮像素子に関す
るものであり、更に詳しくは、画素毎に入射する光量の
割合を均一化させて画素の感度を均等化させた固体撮像
素子に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state image sensor, and more particularly, to a solid-state image sensor in which the ratio of the amount of light incident on each pixel is made uniform and the sensitivity of the pixels is made uniform. .
【０００２】[0002]
【従来の技術】固体撮像素子は、その光学系が１／３イ
ンチから１／４インチと小さくなっており、更には、固
体撮像素子の小型化および画素数の増加に伴って受光部
の開口が小さくなっていることから、画素に対応する個
々の受光部の感度は低下する傾向にある。しかし、単に
受光部の開口を拡大しても、入射光が電荷転送部へ侵入
して撮影画像にスミア（例えば白線）を発生し易くなる
ことから、問題の解決策としての開口の拡大には限界が
ある。2. Description of the Related Art The optical system of a solid-state imaging device has been reduced from 1/3 inch to 1/4 inch. , The sensitivity of each light receiving unit corresponding to a pixel tends to decrease. However, simply enlarging the aperture of the light-receiving section makes it easier for incident light to enter the charge transfer section and generate smear (for example, a white line) in the captured image. There is a limit.
【０００３】そのために、特開平１０−２５６５１８号
公報には、入射光の色に応じた低反射膜を受光部のフォ
トセンサ上に設けた固体撮像素子が開示されている。す
なわち、低反射膜を設けない場合、入射した光の約２５
％がフォトセンサの形成されている半導体基板の表面で
反射され、残りがフォトセンサ内へ進入し光電変換され
て信号電荷となっている。従って、反射光の割合を低下
させれば感度が向上することになるが、例えば反射率が
２〜３％になると感度は３０％程度向上するとされてい
る。更には低反射膜に加えて、半導体基板の表面に水素
を供給し界面電位を低減させて暗電流を抑制するように
したものが開示されている。[0003] For this purpose, Japanese Patent Application Laid-Open No. 10-256518 discloses a solid-state imaging device in which a low-reflection film corresponding to the color of incident light is provided on a photosensor of a light receiving section. That is, when the low reflection film is not provided, about 25% of the incident light
% Is reflected on the surface of the semiconductor substrate on which the photosensor is formed, and the rest enters the photosensor and is photoelectrically converted to signal charges. Therefore, the sensitivity is improved if the ratio of the reflected light is reduced. For example, it is said that the sensitivity is improved by about 30% when the reflectance becomes 2 to 3%. Further, in addition to a low reflection film, there is disclosed a device in which hydrogen is supplied to the surface of a semiconductor substrate to reduce the interface potential and suppress dark current.
【０００４】図１１は特開平１０−２５６５１８号公報
に記載されている固体撮像素子２の概略的な構成を示す
平面図であり、固体撮像素子２は、マトリックス状に配
置した画素としての受光部を構成し光電変換を行うフォ
トセンサ２１と垂直転送レジスタ１４とからなる撮像領
域１６と、垂直転送レジスタ１４から転送される信号電
荷を出力部１８に転送する水平転送レジスタ１７とから
なっている。なお。このような構成は一般的なＣＣＤ固
体撮像素子に共通するものである。そして特開平１０−
２５６５１８号公報の固体撮像素子２が特徴とするとこ
ろは、図１２に示すように、各フォトセンサ２１の上に
低反射膜３５が形成されていることにある。すなわち、
図１２は低反射膜３５が形成されたフォトセンサ２１を
含む受光部３０からなる固体撮像素子２の部分平面図で
あり、後述の図１３の断面図に示されている構成要素の
なかで、フォトセンサ２１と、電気信号の読み出し・転
送を行う垂直転送電極３４（３４ａ、３４ｂ）と、フォ
トセンサ２１の上に垂直方向に連続して形成されている
低反射膜３５とが示されている。その上には、図示され
ずとも、金属遮光膜がほぼ全面的に形成されるが、その
金属遮光膜に設けられる受光窓３７ｗが一点鎖線で示さ
れている。FIG. 11 is a plan view showing a schematic configuration of a solid-state image pickup device 2 described in Japanese Patent Application Laid-Open No. Hei 10-256518. The solid-state image pickup device 2 has a light-receiving portion as pixels arranged in a matrix. And a horizontal transfer register 17 for transferring signal charges transferred from the vertical transfer register 14 to the output unit 18. The imaging area 16 includes a photosensor 21 for performing photoelectric conversion and a vertical transfer register 14. In addition. Such a configuration is common to general CCD solid-state imaging devices. And JP-A-10-
The feature of the solid-state imaging device 2 of 256518 is that a low reflection film 35 is formed on each photosensor 21 as shown in FIG. That is,
FIG. 12 is a partial plan view of the solid-state imaging device 2 including the light receiving unit 30 including the photosensor 21 on which the low-reflection film 35 is formed. Among the components shown in the cross-sectional view of FIG. A photosensor 21, a vertical transfer electrode 34 (34a, 34b) for reading and transferring an electric signal, and a low reflection film 35 continuously formed on the photosensor 21 in the vertical direction are shown. . Although not shown, a metal light-shielding film is formed on almost the entire surface, but a light receiving window 37w provided in the metal light-shielding film is indicated by a dashed line.
【０００５】そして、図１３は図１２におけるに［１
３］−［１３］線方向（水平方向）の受光部３０の断面
図であり、図１４は図１２における［１４］−［１４］
線方向（垂直方向）の受光部３０の断面図である。図１
３、図１４に示すように、受光部３０は、フォトセンサ
２１のほかに、読み出しゲート、垂直転送レジスタ１
４、チャンネルストップ等が形成された半導体基板１１
の表面にゲート絶縁膜３２が形成されており、フォトセ
ンサ２１の上方を避けてゲート絶縁膜３２上に垂直転送
電極３４（３４ａ、３４ｂ）が形成され、垂直転送電極
３４を覆って層間絶縁膜３６が全面的に形成され、フォ
トセンサ２１の上方に受光窓３７ｗを有する金属遮光膜
３７が形成されている。そして、受光窓３７ｗの下方に
位置してフォトセンサ２１上に低反射膜３５を設け、フ
ォトセンサ２１へ進入する光量を増大させることによっ
て固体撮像素子２の感度の向上を図ったものである。な
お低反射膜３５は各受光部３０の上方にそれぞれ形成さ
れるマゼンタ、シアン、イエロー、またはグリーンのカ
ラーフィルター（図示されていない）を透過してくる光
の色に応じた膜厚または屈折率とされている。そして、
金属遮光膜３７の全面を覆ってＳｉＮ（窒化珪素）膜と
ＰＳＧ（燐珪酸ガラス）膜とからなる保護膜３８が形成
されている。FIG. 13 shows [1] in FIG.
FIG. 14 is a cross-sectional view of the light receiving unit 30 along the line [3]-[13] (horizontal direction). FIG. 14 shows [14]-[14] in FIG.
It is sectional drawing of the light receiving part 30 of a line direction (vertical direction). FIG.
3. As shown in FIG. 14, in addition to the photo sensor 21, the light receiving unit 30 includes a read gate, a vertical transfer register 1
4. Semiconductor substrate 11 on which channel stops and the like are formed
A vertical transfer electrode 34 (34a, 34b) is formed on the gate insulating film 32 while avoiding above the photosensor 21, and an interlayer insulating film covering the vertical transfer electrode 34 is formed. 36 is formed over the entire surface, and a metal light shielding film 37 having a light receiving window 37w is formed above the photosensor 21. Then, a low-reflection film 35 is provided on the photosensor 21 below the light receiving window 37w, and the sensitivity of the solid-state imaging device 2 is improved by increasing the amount of light entering the photosensor 21. The low-reflection film 35 has a thickness or a refractive index corresponding to the color of light passing through a magenta, cyan, yellow, or green color filter (not shown) formed above each light receiving unit 30. It has been. And
A protection film 38 made of a SiN (silicon nitride) film and a PSG (phosphosilicate glass) film is formed so as to cover the entire surface of the metal light shielding film 37.
【０００６】更には保護膜３８の上に、図示を省略した
が、全面を覆う平坦化膜、上記のカラーフィルタ、およ
びオンチップレンズ等が形成されている。なお、ＳｉＮ
膜にはプラズマＣＶＤのプラズマに起因する水素が含ま
れており、金属遮光膜３７にも水素を含有するＡｌ等が
使用されるので、金属遮光膜３７や保護膜３８からの水
素が半導体基板１１へ供給されて、半導体基板１１とそ
の上のゲート絶縁膜３２との間の界面電位を低減させ暗
電流を抑制する。Although not shown, a flattening film covering the entire surface, the above-described color filter, an on-chip lens, and the like are formed on the protective film 38. Note that SiN
Since the film contains hydrogen due to the plasma of the plasma CVD, and Al or the like containing hydrogen is also used for the metal light shielding film 37, hydrogen from the metal light shielding film 37 and the protection film 38 is removed from the semiconductor substrate 11. To reduce the interfacial potential between the semiconductor substrate 11 and the gate insulating film 32 thereon to suppress dark current.
【０００７】また、特開２０００−７７６３６号公報に
は、上記の受光部３０は、低反射膜３５を形成させた後
に金属遮光膜３７を形成させるので、低反射膜３５のパ
ターニングと受光窓３７ｗを有する金属遮光膜３７のパ
ターニングとの位置ずれによって低反射膜３５と受光窓
３７ｗと間に隙間を生じ易いが、その隙間を経由して入
射光が垂直転送レジスタ１４等に侵入し撮影画像にスミ
アを生ずるとして、図１５に示すように、低反射膜３５
と金属遮光膜３７との上下の関係を反転させ、金属遮光
膜３７上に低反射膜３５を全面的に形成させ、その上へ
保護膜３８を形成させた受光部４０からなる固体撮像素
子が提案されている。なお、図１５においては、低反射
膜３５、金属遮光膜３７、保護膜３８以外の構成要素で
図１３と共通するものには同一の符号を付しており、そ
れらの説明は省略する。In Japanese Patent Application Laid-Open No. 2000-77636, since the light receiving section 30 forms the metal light shielding film 37 after forming the low reflection film 35, the patterning of the low reflection film 35 and the light receiving window 37w are performed. The gap between the low-reflection film 35 and the light-receiving window 37w is likely to be formed due to the positional deviation from the patterning of the metal light-shielding film 37 having the above. However, the incident light enters the vertical transfer register 14 and the like via the gap to produce a captured image. Assuming that smear occurs, as shown in FIG.
The solid-state imaging device including the light receiving unit 40 in which the low-reflection film 35 is entirely formed on the metal light-shielding film 37 and the protective film 38 is formed thereon is inverted. Proposed. In FIG. 15, components common to FIG. 13 other than the low reflection film 35, the metal light shielding film 37, and the protection film 38 are denoted by the same reference numerals, and description thereof will be omitted.
【０００８】[0008]
【発明が解決しようとする課題】しかしながら、特開平
１０−２５６５１８号公報の図１３に示したような構成
の受光部３０は、垂直転送電極３４ｂの段差面３４ｓが
必ずしも垂直面とはならずに傾斜面となる場合があり、
傾斜の段差面３４ｓは低反射膜３５を形成させるレジス
ト膜への露光を反射させ、そのハレーションによってレ
ジスト膜の開口幅を不均一化させる。従って、形成され
る低反射膜３５は幅のバラツキが大となり、その結果、
矢印Ｌ1 、Ｌ2 で示すように、受光窓３７ｗから低反射
膜３５を透過してフォトセンサ２１へ入射する光量と、
受光窓３７ｗから低反射膜３５を透過せずにフォトセン
サ２１へ入射する光量との割合が受光部３０毎に異なる
ようになる。すなわち、画素毎に感度差を生じ、撮像画
面の明るさが不均等になるので製品検査をパスしなくな
る。そして、この低反射膜３５の幅のバラツキは製造ロ
ット間のバラツキとなるので、製造ロット毎に不良率が
変化して製品の歩留りを不安定化させている。However, in the light receiving section 30 having the structure as shown in FIG. 13 of Japanese Patent Application Laid-Open No. H10-256518, the step surface 34s of the vertical transfer electrode 34b is not necessarily vertical. It may be a slope,
The inclined step surface 34s reflects the exposure of the resist film for forming the low reflection film 35, and makes the opening width of the resist film non-uniform due to the halation. Accordingly, the formed low reflection film 35 has a large variation in width, and as a result,
As shown by arrows L 1 and L 2 , the amount of light transmitted through the low-reflection film 35 from the light receiving window 37 w and incident on the photo sensor 21,
The ratio of the amount of light incident on the photo sensor 21 without passing through the low reflection film 35 from the light receiving window 37 w differs for each light receiving unit 30. That is, a sensitivity difference occurs for each pixel, and the brightness of the imaging screen becomes uneven, so that the product inspection does not pass. Since the variation in the width of the low reflection film 35 varies between manufacturing lots, the defective rate changes for each manufacturing lot, and the product yield is destabilized.
【０００９】また、特開２０００−７７６３６号公報に
開示の受光部４０は、その構成によって低反射膜３５と
金属遮光膜３７とのパターニングの位置ずれによる問題
は回避されるが、保護膜３８からの水素の供給は期待で
きない構成であるほか、特開平１０−２５６５１８号公
報の受光部３０の製造プロセスの順序の変更を要し、そ
れに伴って装置・機器の配列の変更を必要とする。The light-receiving unit 40 disclosed in Japanese Patent Application Laid-Open No. 2000-77636 avoids the problem due to the misalignment of the patterning between the low-reflection film 35 and the metal light-shielding film 37 due to its configuration. In addition, the supply of hydrogen cannot be expected, and the order of the manufacturing process of the light receiving unit 30 disclosed in Japanese Patent Application Laid-Open No. H10-256518 needs to be changed, and accordingly, the arrangement of devices and equipment needs to be changed.
【００１０】本発明は上述の問題に鑑みてなされ、低反
射膜を透過する光量と低反射膜を透過しない光量との割
合が異なることによる受光部毎の感度の不均一を発生せ
ず、生産性を大幅に向上させ得る固体撮像素子を提供す
ることを課題とする。SUMMARY OF THE INVENTION The present invention has been made in view of the above-described problems, and does not cause unevenness in sensitivity of each light receiving unit due to a difference in the ratio between the amount of light transmitted through the low reflection film and the amount of light not transmitted through the low reflection film. It is an object of the present invention to provide a solid-state imaging device capable of greatly improving performance.
【００１１】[0011]
【課題を解決するための手段】上記の課題は請求項１ま
たは請求項５の構成によって解決されるが、その解決手
段を説明すれば、次の如くである。Means for Solving the Problems The above problems can be solved by the structure of claim 1 or claim 5. The means for solving the problems will be described as follows.
【００１２】請求項１の固体撮像素子は、半導体基板の
表面部に画素としての受光部のフォトセンサをマトリッ
クス状に配置し、半導体基板の表面のゲート絶縁膜にフ
ォトセンサの上方を避けて転送電極を形成し、更に転送
電極およびフォトセンサ上に形成された層間絶縁膜を介
して、フォトセンサの上方に受光窓を有する遮光膜を形
成して構成される固体撮像素子において、フォトセンサ
面での光の反射率を低下させる低反射膜がフォトセンサ
上のゲート絶縁膜と層間絶縁膜との間に受光窓より広い
面積を占めて形成されているものである。このような固
体撮像素子は、入射光の全てが低反射膜を透過してフォ
トセンサに進入することにより受光部毎の入射光量が一
定化され、画素毎に感度差を生じるような問題を発生さ
せない。According to the first aspect of the present invention, a photo sensor of a light receiving section as a pixel is arranged in a matrix on the surface of the semiconductor substrate, and transferred to the gate insulating film on the surface of the semiconductor substrate while avoiding the area above the photo sensor. Forming an electrode, and further forming a light-shielding film having a light-receiving window above the photosensor via a transfer electrode and an interlayer insulating film formed on the photosensor; Is formed between the gate insulating film and the interlayer insulating film on the photosensor so as to occupy a larger area than the light receiving window. Such a solid-state imaging device has a problem in that all incident light passes through the low-reflection film and enters the photo sensor, so that the amount of incident light for each light receiving unit is constant and a sensitivity difference occurs for each pixel. Do not let.
【００１３】請求項１に従属する請求項２の固体撮像素
子は、低反射膜に受光窓と重ならない部分的な欠落箇所
が設けられているものである。このような固体撮像素子
は、低反射膜の欠落箇所が低反射膜の上方に形成された
膜から供給される水素を半導体基板へ導くに際しての通
路として機能する。According to a second aspect of the present invention, the low-reflection film has a partially missing portion which does not overlap with the light receiving window. Such a solid-state imaging device functions as a passage for guiding hydrogen supplied from the film formed above the low-reflection film to the semiconductor substrate where the low-reflection film is missing.
【００１４】請求項２に従属する請求項３の固体撮像素
子は、低反射膜の上方に水素を供給する膜が形成されて
いるものである。このような固体撮像素子は、水素が低
反射膜の欠落箇所を経由して半導体基板へ供給され、半
導体基板とゲート絶縁膜との界面電位を低下させて暗電
流を抑制し、撮影画像のスミアを低減させる。According to a second aspect of the present invention, there is provided a solid-state imaging device according to the third aspect, wherein a film for supplying hydrogen is formed above the low reflection film. In such a solid-state imaging device, hydrogen is supplied to the semiconductor substrate via a portion where the low reflection film is missing, and the dark current is suppressed by lowering the interface potential between the semiconductor substrate and the gate insulating film, and the smear of a captured image is reduced. To reduce.
【００１５】請求項１に従属する請求項４の固体撮像素
子は、低反射膜がフォトセンサに入射する光の波長に応
じて膜厚または屈折率を変えて形成されているものであ
る。このような固体撮像素子は、入射光の波長に基づく
適切な膜厚または屈折率の低反射膜を有することから、
各フォトセンサへの入射光量が大きく高い感度を有して
いる。According to a fourth aspect of the present invention, the low-reflection film is formed by changing a film thickness or a refractive index according to the wavelength of light incident on the photosensor. Since such a solid-state imaging device has a low-reflection film having an appropriate thickness or refractive index based on the wavelength of incident light,
The amount of light incident on each photosensor is large and has high sensitivity.
【００１６】請求項５の固体撮像素子の製造方法は、半
導体基板の表面部に画素としての受光部のフォトセンサ
をマトリックス状に配置し、半導体基板の表面のゲート
絶縁膜にフォトセンサの上方を避けて転送電極を形成
し、更に転送電極およびフォトセンサ上に形成された層
間絶縁膜を介して、フォトセンサの上方に受光窓を有す
る遮光膜を形成して構成される固体撮像素子の製造方法
において、フォトセンサ面での光の反射率を低下させる
低反射膜をフォトセンサ上のゲート絶縁膜と層間絶縁膜
との間に受光窓より大きい面積で形成させる方法であ
る。このような固体撮像素子の製造方法は、入射光の全
てが低反射膜を透過してフォトセンサに進入することか
ら受光部毎の入射光量を一定化させ、画素毎の感度差が
ない固体撮像素子を与える。According to a fifth aspect of the present invention, there is provided a method of manufacturing a solid-state imaging device, wherein photosensors of light receiving sections as pixels are arranged in a matrix on the surface of a semiconductor substrate, and a gate insulating film on the surface of the semiconductor substrate is provided above the photosensor. A method for manufacturing a solid-state imaging device, comprising: forming a transfer electrode while avoiding it; and forming a light-shielding film having a light receiving window above the photosensor via the transfer electrode and an interlayer insulating film formed on the photosensor. In this method, a low-reflection film for reducing the reflectance of light on the photosensor surface is formed between the gate insulating film and the interlayer insulating film on the photosensor with an area larger than the light receiving window. Such a method of manufacturing a solid-state imaging device uses a solid-state imaging device in which all incident light passes through a low-reflection film and enters a photosensor, so that the amount of incident light for each light receiving unit is constant, and there is no difference in sensitivity between pixels. Give the element.
【００１７】請求項５に従属する請求項６の固体撮像素
子の製造方法は、低反射膜に受光窓との重なりを避けて
部分的な欠落箇所を設ける方法である。このような固体
撮像素子の製造方法は、低反射膜の上方に形成された膜
から供給される水素を半導体基板へ導く通路を備えた受
光部からなる固体撮像素子を与える。A method of manufacturing a solid-state imaging device according to claim 6 is a method of providing a partially missing portion in the low reflection film so as to avoid overlapping with the light receiving window. Such a method of manufacturing a solid-state imaging device provides a solid-state imaging device including a light receiving portion having a passage for guiding hydrogen supplied from a film formed above a low reflection film to a semiconductor substrate.
【００１８】請求項６に従属する請求項７の固体撮像素
子の製造方法は、低反射膜の上方に水素を供給する膜を
形成させる方法である。このような固体撮像素子の製造
方法は、水素が低反射膜の欠落箇所を通路として半導体
基板へ供給されることから、半導体基板とゲート絶縁膜
との界面電位が低下され暗電流が抑制された固体撮像素
子を与える。A method for manufacturing a solid-state imaging device according to claim 7 is a method for forming a film for supplying hydrogen above the low reflection film. In the method of manufacturing such a solid-state imaging device, since hydrogen is supplied to the semiconductor substrate through the missing portion of the low-reflection film as a passage, the interface potential between the semiconductor substrate and the gate insulating film is reduced and dark current is suppressed. A solid-state imaging device is provided.
【００１９】請求項５に従属する請求項８の固体撮像素
子の製造方法は、低反射膜をフォトセンサに入射する光
の波長に応じて膜厚または屈折率を変えて形成させる方
法である。このような固体撮像素子の製造方法は、各フ
ォトセンサ面での反射率を入射光の波長に基づいて適切
に低下させ、各受光部の感度が向上された固体撮像素子
を与える。According to a fifth aspect of the present invention, there is provided a method of manufacturing a solid-state imaging device, wherein a low-reflection film is formed by changing a film thickness or a refractive index in accordance with the wavelength of light incident on a photosensor. Such a method of manufacturing a solid-state imaging device appropriately reduces the reflectance on each photosensor surface based on the wavelength of incident light, and provides a solid-state imaging device with improved sensitivity of each light receiving unit.
【００２０】[0020]
【発明の実施の形態】本発明の固体撮像素子は、上述し
たように、フォトセンサ面での光の反射率を低下させる
低反射膜が金属遮光膜の受光窓より広い面積を占めてフ
ォトセンサ上のゲート絶縁膜と層間絶縁膜との間に形成
されているものである。低反射膜が受光窓より広い面積
を持つものであり、入射光の全てが低反射膜を透過して
フォトセンサに進入するものである限り、低反射膜の平
面形状は特に限定されない。すなわち、フォトセンサ毎
にフォトセンサを可及的に覆うように形成させてもよ
く、また垂直方向に連続する低反射膜として垂直な方向
の線上にある各フォトセンサを覆うように形成させても
よく、また低反射膜を格子状として、格子の交差部分で
フォトセンサを覆うように形成させてもよい。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS As described above, in a solid-state imaging device according to the present invention, a low-reflection film for lowering light reflectance on a photosensor surface occupies a larger area than a light-receiving window of a metal light-shielding film. It is formed between the upper gate insulating film and the interlayer insulating film. The plane shape of the low-reflection film is not particularly limited as long as the low-reflection film has a larger area than the light receiving window and all the incident light passes through the low-reflection film and enters the photosensor. That is, each photo sensor may be formed so as to cover the photo sensor as much as possible, or may be formed so as to cover each photo sensor on a line in the vertical direction as a vertically continuous low reflection film. Alternatively, the low-reflection film may be formed in a grid shape so as to cover the photosensor at the intersection of the grid.
【００２１】低反射膜は受光窓より広い面積とし、フォ
トセンサを可及的に覆うような形状に形成させるが、上
方の膜から供給される水素の通路として、受光窓と重な
らないように低反射膜に欠落箇所を設けたものであるこ
とが望ましい。通路とする低反射膜の欠落箇所はフォト
センサの四隅部に相当する箇所に設けてもよく、そのほ
か、フォトセンサの周縁部に相当する部分に設けてもよ
い。そして、欠落部分の平面形状は方形、三角形、半円
形、その他どのような形状であってもよく、また欠落箇
所の数も限定されない。低反射膜が金属遮光膜の受光窓
の面積より大でフォトセンサより小さい平面形状である
場合には、当該低反射膜の周囲が水素の通路となるので
上記の欠落箇所を敢えて設ける必要はない。The low-reflection film has a larger area than the light-receiving window and is formed so as to cover the photosensor as much as possible. However, the low-reflection film serves as a passage for hydrogen supplied from an upper film so as not to overlap with the light-receiving window. It is desirable that the reflective film has a missing portion. The missing portion of the low-reflection film serving as the passage may be provided at a position corresponding to the four corners of the photosensor, or may be provided at a portion corresponding to the peripheral portion of the photosensor. The planar shape of the missing portion may be square, triangular, semicircular, or any other shape, and the number of missing portions is not limited. When the low-reflection film has a planar shape larger than the area of the light-receiving window of the metal light-shielding film and smaller than the photosensor, the periphery of the low-reflection film serves as a hydrogen passage. .
【００２２】水素の供給膜としては、例えば水素の還元
雰囲気で形成されたＡｌによる金属遮光膜や、プラズマ
ＣＶＤ技術によって形成されたＳｉＮによる保護膜には
水素が含まれているので、これらの膜の少なくとも一種
を採用することができる。そして、この水素をフォトセ
ンサが形成されている半導体基板へ供給することによっ
て、半導体基板とゲート絶縁膜との間の界面電位を低減
させて暗電流を抑制することができる。As a hydrogen supply film, for example, a metal light-shielding film made of Al formed in a hydrogen reducing atmosphere or a protective film made of SiN formed by a plasma CVD technique contains hydrogen. At least one of the above can be adopted. Then, by supplying this hydrogen to the semiconductor substrate on which the photosensor is formed, the interface current between the semiconductor substrate and the gate insulating film can be reduced, and dark current can be suppressed.
【００２３】また低反射膜はフォトセンサへ入射する光
の波長に応じて膜厚または屈折率を変えて形成される。
すなわち、低反射膜の反射率は、低反射膜の屈折率を
ｎ、厚さをｄ、入射光の波長をλとすると、光学的膜厚
ｎｄが（λ／４）の奇数倍である時に最小となるので、
この関係を利用して膜厚または屈折率が設定される。更
には、低反射膜の材料としては、半導体基板の屈折率は
３〜４であるので、一般的には、これよりも小さい屈折
率を持つものが選択される。The low reflection film is formed by changing the film thickness or the refractive index according to the wavelength of the light incident on the photo sensor.
That is, assuming that the refractive index of the low reflection film is n, the thickness of the low reflection film is d, and the wavelength of the incident light is λ, the optical film thickness nd is an odd multiple of (λ / 4). Since it is the smallest,
The film thickness or the refractive index is set using this relationship. Furthermore, since the refractive index of the semiconductor substrate is 3 to 4 as the material of the low reflection film, a material having a lower refractive index is generally selected.
【００２４】[0024]
【実施例】次に本発明の固体撮像素子を実施例により図
面を参照して具体的に説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the solid-state imaging device of the present invention will be described in detail with reference to the drawings.
【００２５】（実施例）図１は実施例の固体撮像素子１
の受光部２０を含む部分平面図であり、図２は図１にお
ける［２］−［２］線方向（水平方向）の受光部２０の
断面図、図３は図１における［３］−［３］線方向（垂
直方向）の受光部２０の断面図である。すなわち、図１
は従来例の図１２に対応する図、図２は従来例の図１３
に対応する図、図３は従来例の図１４に対応する。(Embodiment) FIG. 1 shows a solid-state imaging device 1 according to an embodiment.
2 is a partial plan view including the light receiving unit 20, FIG. 2 is a cross-sectional view of the light receiving unit 20 in the [2]-[2] line direction (horizontal direction) in FIG. 1, and FIG. 3 is [3]-[ 3] is a cross-sectional view of the light receiving unit 20 in a line direction (vertical direction). That is, FIG.
Is a diagram corresponding to FIG. 12 of the conventional example, and FIG. 2 is a diagram corresponding to FIG.
FIG. 3 corresponds to FIG. 14 of the conventional example.
【００２６】受光部２０は、図２に示すように、フォト
センサ２１のほかに、読み出しゲート、垂直転送レジス
タ１４、チャンネルストップ等が形成された半導体基板
１１の表面にゲート絶縁膜２２が形成されており、ゲー
ト絶縁膜２２上に垂直転送電極２４（２４ａ、２４ｂ）
が形成され、垂直転送電極２４を覆って層間絶縁膜２６
が全面的に形成されている。そして、その上に水素を含
むＡｌによる金属遮光膜２７が受光窓２７ｗと共に形成
されていることは、従来例の受光部３０の場合と基本的
に同様であるが、実施例の受光部２０の低反射膜２５
は、図１、図２、図３に示すように、金属遮光膜２７の
受光窓２７ｗよりも広い面積を占めて、ゲート絶縁膜２
２を介しフォトセンサ２１を可及的に覆うように形成さ
れたものである。As shown in FIG. 2, in the light receiving section 20, a gate insulating film 22 is formed on the surface of the semiconductor substrate 11 on which a read gate, a vertical transfer register 14, a channel stop, etc. are formed in addition to the photo sensor 21. And vertical transfer electrodes 24 (24a, 24b) on the gate insulating film 22.
Is formed, and the interlayer insulating film 26 covering the vertical transfer electrode 24 is formed.
Are formed over the entire surface. The metal light-shielding film 27 made of Al containing hydrogen is formed thereon together with the light-receiving window 27w, which is basically the same as that of the light-receiving portion 30 of the conventional example. Low reflection film 25
Occupies a larger area than the light-receiving window 27w of the metal light-shielding film 27, as shown in FIGS.
2 is formed so as to cover the photosensor 21 as much as possible.
【００２７】この時、低反射膜２５はフォトセンサ２１
に入射する光の色（波長）に応じて最も適切な反射率が
得られるように、厚さまたは屈折率を予め設定して形成
される。低反射膜２５には、図１に示すように、フォト
センサ２１の四隅部に対応する部分に欠落箇所２５ｃが
受光窓２７ｗと重ならないように設けられている。そし
て、従来例と同様に、これらの全面を覆ってＳｉＮ膜と
ＰＳＧ膜とからなる保護膜２８が形成されている。At this time, the low reflection film 25 is
The thickness or the refractive index is set in advance so that the most appropriate reflectance can be obtained according to the color (wavelength) of the light incident on the substrate. As shown in FIG. 1, the low-reflection film 25 is provided at portions corresponding to the four corners of the photosensor 21 such that the missing portions 25c do not overlap with the light receiving window 27w. Then, as in the conventional example, a protective film 28 made of a SiN film and a PSG film is formed so as to cover the entire surface.
【００２８】低反射膜２５は、上述したように、金属遮
光膜２７の受光窓２７ｗより広い面積に形成されている
ので、低反射膜２５の幅が多少のバラツキを生じても、
入射光は全て低反射膜２５を透過してフォトセンサ２１
に進入し、画素毎に感度が異なるような状態は発生しな
い。また低反射膜２５の四隅の欠落箇所２５ｃを経由し
てＡｌの金属遮光膜２７や保護膜２８からの水素がフォ
トセンサ２１の形成されている半導体基板１１へ供給さ
れるので暗電流を抑制することができる。As described above, since the low reflection film 25 is formed in an area larger than the light receiving window 27w of the metal light shielding film 27, even if the width of the low reflection film 25 slightly varies,
All the incident light passes through the low reflection film 25 and passes through the photo sensor 21.
, And a state in which the sensitivity differs for each pixel does not occur. Further, since hydrogen from the Al metal light-shielding film 27 and the protective film 28 is supplied to the semiconductor substrate 11 on which the photosensor 21 is formed via the missing portions 25c at the four corners of the low reflection film 25, the dark current is suppressed. be able to.
【００２９】図４、図５は、図２に示す受光部２０の製
造プロセスを順に示す図である。図４のＡを参照して、
従来例の固体撮像素子３０を製造する場合と同様に、半
導体基板１１にゲート絶縁膜２２と垂直転送電極２４を
形成させ、その上へ例えばＣＶＤの技術によってＳｉＮ
からなる低反射膜２５’を形成させる。続く図４のＢ
は、フォトセンサ２１を可及的に覆うように低反射膜２
５’上にレジスト膜２９を選択的に形成させた状態を示
す。なお、レジスト膜２９には図２に示した低反射膜２
５の欠落箇所２５ｃに対応する欠落箇所（図示されてい
ない）を設ける。図４のＣは、レジスト膜２９をマスク
として低反射膜２５’をエッチングし、続いてレジスト
膜２９を除去して、低反射膜２５を出現させた状態を示
す。FIGS. 4 and 5 are diagrams sequentially showing the manufacturing process of the light receiving section 20 shown in FIG. Referring to FIG.
As in the case of manufacturing the solid-state imaging device 30 of the conventional example, the gate insulating film 22 and the vertical transfer electrode 24 are formed on the semiconductor substrate 11, and SiN is formed thereon by, for example, a CVD technique.
Is formed. The following B in FIG.
Is a low reflection film 2 so as to cover the photo sensor 21 as much as possible.
The state where the resist film 29 is selectively formed on 5 ′ is shown. The resist film 29 has a low reflection film 2 shown in FIG.
A missing portion (not shown) corresponding to the missing portion 25c of No. 5 is provided. FIG. 4C shows a state in which the low-reflection film 25 'is etched using the resist film 29 as a mask, the resist film 29 is subsequently removed, and the low-reflection film 25 appears.
【００３０】続いて、図５のＡは全面にＳｉＯ2 からな
る層間絶縁膜２６を形成させた状態を示す。そして、図
５のＢに示すように、層間絶縁膜２６の上へ例えばＣＶ
Ｄ法によりＡｌからなる金属遮光膜２７を形成させる。
次に、図５のＣに示すように、金属遮光膜２７を選択的
にエッチングして受光窓２７ｗを形成させる。その後は
図２に示したように、全面に保護膜２８を形成させる。
この製造プロセスの順序は従来例の固体撮像素子２の製
造プロセスと同様である。従って、本発明の固体撮像素
子１は、従来例の固体撮像素子２の製造プロセスを何等
変更することなく、単に、受光窓２７ｗより広い面積の
低反射膜２５を形成させることのみで製造することがで
きる。FIG. 5A shows a state in which an interlayer insulating film 26 made of SiO 2 is formed on the entire surface. Then, as shown in FIG. 5B, for example, CV
A metal light shielding film 27 made of Al is formed by the method D.
Next, as shown in FIG. 5C, the metal light shielding film 27 is selectively etched to form a light receiving window 27w. Thereafter, as shown in FIG. 2, a protective film 28 is formed on the entire surface.
The order of this manufacturing process is the same as that of the conventional solid-state imaging device 2. Therefore, the solid-state imaging device 1 of the present invention can be manufactured by simply forming the low-reflection film 25 having an area larger than the light receiving window 27w without changing the manufacturing process of the conventional solid-state imaging device 2 at all. Can be.
【００３１】このように低反射膜２５の面積を大にする
ことは、図１３に示す、フォトセンサ２１と金属遮光膜
３７の下面との間隔Ｇの拡大を伴うので、入射光の一部
が垂直転送レジスタ１４等へ侵入し撮影画像にスミアを
生じるとして従来は取り上げられなかったのであるが、
試行した結果、受光部毎に異なる感度の問題の解決に極
めて有効であることが見い出されたのである。Increasing the area of the low-reflection film 25 in this way involves increasing the distance G between the photosensor 21 and the lower surface of the metal light-shielding film 37 shown in FIG. Conventionally, it was not taken up as intrusion into the vertical transfer register 14 and the like, causing smearing in the photographed image.
As a result of the trial, it has been found that it is extremely effective in solving the problem of the sensitivity that differs for each light receiving unit.
【００３２】以上、本発明の実施例について説明した
が、勿論、本発明はこれに限られることなく、本発明の
技術的思想に基づいて種々の変形が可能である。Although the embodiment of the present invention has been described above, the present invention is, of course, not limited to this, and various modifications can be made based on the technical concept of the present invention.
【００３３】例えば本実施例においては、受光部２０毎
に低反射膜２５を独立させて設けたが、垂直方向に連続
する低反射膜２５’を設けてもよい。図６はそのような
低反射膜２５’を設けた受光部２０’からなる固体撮像
素子１’の部分平面図であり、実施例の図１に対応する
図である。低反射膜２５’の欠落箇所２５ｃ’は同様に
設けられる。また、図７は図６における［７］−［７］
線方向の受光部２０’の断面図、図８は図６における
［８］−［８］線方向の受光部２０’の断面図であり、
実施例の図２、図３に対応する。なお、図６、図７、図
８において低反射膜２５’以外の図１、図２、図３と共
通する構成要素には同一の符号を付して、それらの説明
は省略する。For example, in this embodiment, the low reflection film 25 is provided independently for each light receiving section 20, but a low reflection film 25 'continuous in the vertical direction may be provided. FIG. 6 is a partial plan view of the solid-state imaging device 1 'including the light receiving section 20' provided with such a low reflection film 25 ', and corresponds to FIG. 1 of the embodiment. The missing portion 25c 'of the low reflection film 25' is provided similarly. FIG. 7 shows [7]-[7] in FIG.
FIG. 8 is a cross-sectional view of the light-receiving unit 20 ′ in the line direction [8]-[8] in FIG.
This corresponds to FIGS. 2 and 3 of the embodiment. 6, 7, and 8, the same components as those in FIGS. 1, 2, and 3 except for the low reflection film 25 'are denoted by the same reference numerals, and description thereof will be omitted.
【００３４】また、格子状の低反射膜２５”を設けても
よい。図９はそのような低反射膜２５”を設けた受光部
２０”からなる固体撮像素子１”の部分平面図であり、
図１に対応する図である。低反射膜２５”の欠落箇所２
５ｃ”は同様に設けられる。また、図１０は図９におけ
る［１０］−［１０］線方向の受光部２０”の断面図で
あり図２に対応する。なお図９における［Ｖ］−［Ｖ］
線方向の受光部２０”の断面図は図８と同一であるので
図８で代用する。図９、図１０においても、図１、図２
と共通する構成要素には同一の符号を付してそれらの説
明は省略する。Further, a lattice-like low reflection film 25 "may be provided. FIG. 9 is a partial plan view of the solid-state imaging device 1" comprising the light receiving section 20 "provided with such a low reflection film 25". ,
FIG. 2 is a diagram corresponding to FIG. 1. Missing portion 2 of low reflection film 25 "
5c "is similarly provided. FIG. 10 is a cross-sectional view of the light receiving unit 20" in the [10]-[10] line direction in FIG. 9 and corresponds to FIG. [V]-[V] in FIG.
The cross-sectional view of the light receiving section 20 ″ in the linear direction is the same as that of FIG. 8, and therefore is replaced with FIG. 8. In FIGS. 9 and 10, FIGS.
The same reference numerals are given to the same components as those described above, and the description thereof will be omitted.
【００３５】また本実施例においては、低反射膜の上方
に設けられる光学フィルターについては記述しなかった
が、例えば本発明の固体撮像素子がカラー撮像用である
場合には、受光部毎にマゼンタ、シアン、イエロー、ま
たはグリーンのカラーフィルターが設けられる。また本
発明の固体撮像素子が赤外線撮像用である場合には、各
受光部に赤外線フィルターが設けられる。In this embodiment, the optical filter provided above the low reflection film is not described. For example, when the solid-state imaging device of the present invention is for color imaging, magenta , Cyan, yellow, or green color filters. When the solid-state imaging device of the present invention is for infrared imaging, an infrared filter is provided in each light receiving unit.
【００３６】また本実施例においては、受光部に設けら
れる低反射膜の詳細については述べなかったが、低反射
膜の光の反射率は、周知のように、光の波長と低反射膜
の厚さおよび屈折率によって定まるので、低反射膜に適
切な反射率を与えフォトセンサへの入射光量を増大させ
て固体撮像素子の感度を向上させるように、低反射膜の
厚さまたは屈折率は、受光部へ入射する光の色（波長）
に応じて設定される。例えば、固体撮像素子がカラー撮
像用であり、低反射膜の上方にマゼンタ、シアン、イエ
ロー、またはグリーンのカラーフィルターが設けられる
場合、低反射膜はカラーフィルターを透過してくる光の
色に応じて厚さまたは屈折率を設定して成膜される。ま
た、固体撮像素子が赤外線撮像用であり、受光部へ入射
する光が赤外線の場合には、その赤外線の波長に応じた
厚さまたは屈折率の低反射膜とされる。In this embodiment, the details of the low-reflection film provided in the light-receiving portion are not described. However, as is well known, the light reflectance of the low-reflection film depends on the wavelength of light and the low-reflection film. The thickness or refractive index of the low-reflection film is determined by the thickness and the refractive index, so that the low-reflection film has an appropriate reflectance to increase the amount of light incident on the photosensor and improve the sensitivity of the solid-state imaging device. , Color (wavelength) of light incident on the light receiving part
It is set according to. For example, when the solid-state imaging device is for color imaging and a magenta, cyan, yellow, or green color filter is provided above the low reflection film, the low reflection film corresponds to the color of light transmitted through the color filter. The film is formed by setting the thickness or the refractive index. When the solid-state imaging device is for infrared imaging and the light incident on the light receiving portion is infrared light, a low reflection film having a thickness or a refractive index corresponding to the wavelength of the infrared light is used.
【００３７】また本実施例においては、受光部の感度を
向上させるために通常的に設けられるオンチップレンズ
については述べなかったが、本発明の固体撮像素子にお
いても受光部の感度を向上させるためにオンチップレン
ズを設けることが望ましい。In this embodiment, the on-chip lens which is usually provided to improve the sensitivity of the light receiving section is not described. However, in the solid-state imaging device of the present invention, the sensitivity of the light receiving section is also improved. It is desirable to provide an on-chip lens for the camera.
【００３８】[0038]
【発明の効果】本発明の固体撮像素子は以上に説明した
ような形態で実施され、次に延べるような効果を奏す
る。The solid-state imaging device according to the present invention is implemented in the form described above, and has the following effects.
【００３９】請求項１の固体撮像素子によれば、低反射
膜が受光窓より広い面積を占めて形成されているので、
入射光の全てが低反射膜を透過し各フォトセンサに均等
に進入することから、各受光部の感度が均一化され、均
一な明るさの撮影画像がを与える。従ってまた、受光部
の感度が製造ロット毎にバラツクような生産の不安定さ
を解消させる。更には、従来例の固体撮像素子とは受光
窓に対する低反射膜の面積が大であることが異なるのみ
であり、製造に際しても、従来の製造プロセスの変更を
必要としない。According to the solid-state imaging device of the first aspect, the low reflection film is formed to occupy a larger area than the light receiving window.
Since all of the incident light passes through the low-reflection film and uniformly enters each photosensor, the sensitivity of each light receiving unit is uniformed, and a captured image with uniform brightness is provided. Therefore, the instability of production in which the sensitivity of the light receiving unit varies for each manufacturing lot is eliminated. Furthermore, the only difference is that the area of the low-reflection film with respect to the light receiving window is larger than that of the conventional solid-state imaging device, and the manufacturing process does not require a change in the manufacturing process.
【００４０】請求項２の固体撮像素子によれば、低反射
膜が受光窓を避けて部分的に欠落されているので、低反
射膜の上方に形成される膜から供給される水素を低反射
膜の欠落箇所から半導体基板へ供給することが可能であ
る。請求項３の固体撮像素子によれば、低反射膜の上方
に水素を供給する膜が形成されているので、低反射膜の
欠落箇所を通路として水素が半導体基板へ供給されるこ
とにより、半導体基板とゲート絶縁膜との界面電位が低
下されて暗電流が抑制されたものとなる。According to the solid-state imaging device of the second aspect, since the low reflection film is partially omitted avoiding the light receiving window, the hydrogen supplied from the film formed above the low reflection film has low reflection. It is possible to supply the semiconductor substrate from the missing portion of the film. According to the solid-state imaging device of the third aspect, since the film for supplying hydrogen is formed above the low-reflection film, the hydrogen is supplied to the semiconductor substrate through the missing portion of the low-reflection film as a passage, so that semiconductor The interface potential between the substrate and the gate insulating film is reduced, and dark current is suppressed.
【００４１】請求項４の固体撮像素子によれば、低反射
膜が受光部に入射する光の波長に応じて膜厚または屈折
率を変えて形成されているので、入射光が最も効果的に
フォトセンサへ進入することから高感度を有する。According to the solid-state imaging device of the fourth aspect, the low reflection film is formed by changing the film thickness or the refractive index in accordance with the wavelength of the light incident on the light receiving portion. It has high sensitivity because it enters the photo sensor.
【００４２】請求項５の固体撮像素子の製造方法によれ
ば、低反射膜を受光窓より広い面積に形成させるので、
入射光の全てが低反射膜を透過し各フォトセンサに均等
に進入することから、各受光部の感度が均一で撮影画像
が均一な明るさの固体撮像素子を与える。従ってまた、
受光部の感度が製造ロット毎にバラツクような生産の不
安定さは解消される。更には、従来例の固体撮像素子と
は受光窓に対する低反射膜の面積が大であることが異な
るのみであり、従来の製造プロセスを変更することなく
製造することができる。According to the method of manufacturing a solid-state imaging device of the present invention, the low reflection film is formed in a larger area than the light receiving window.
Since all of the incident light passes through the low-reflection film and uniformly enters each photosensor, a solid-state imaging device with uniform sensitivity of each light receiving unit and uniform brightness of a captured image is provided. So also
Production instability, in which the sensitivity of the light receiving unit varies from one production lot to another, is eliminated. Furthermore, it differs from the conventional solid-state imaging device only in that the area of the low-reflection film with respect to the light-receiving window is large, and can be manufactured without changing the conventional manufacturing process.
【００４３】請求項６の固体撮像素子の製造方法によれ
ば、受光窓を避けて低反射膜に部分的な欠落箇所を設け
るので、低反射膜の上方に形成された膜から供給される
水素を低反射膜の欠落箇所から半導体基板へ導く通路が
形成される。請求項７の固体撮像素子の製造方法によれ
ば、低反射膜の上方に水素を供給する膜が形成させるの
で、低反射膜の欠落箇所を通路として水素を半導体基板
へ供給し、半導体基板とゲート絶縁膜との界面電位を低
下させて暗電流を抑制することが可能になる。According to the method of manufacturing a solid-state image pickup device according to the sixth aspect, since a partially missing portion is provided in the low-reflection film avoiding the light receiving window, hydrogen supplied from the film formed above the low-reflection film is provided. Is formed from the missing portion of the low reflection film to the semiconductor substrate. According to the method of manufacturing a solid-state imaging device according to claim 7, since a film for supplying hydrogen is formed above the low-reflection film, hydrogen is supplied to the semiconductor substrate through a portion where the low-reflection film is missing, and The dark current can be suppressed by lowering the interface potential with the gate insulating film.
【００４４】請求項７の固体撮像素子の製造方法によれ
ば、低反射膜をフォトセンサに入射する光の波長に応じ
て膜厚または屈折率を変えて形成させるので、受光部に
設ける光学フィルターを透過した入射光を最も効果的に
フォトセンサへ進入させて固体撮像素子の感度を向上さ
せる。According to the method of manufacturing a solid-state imaging device of the present invention, the low reflection film is formed by changing the film thickness or the refractive index according to the wavelength of the light incident on the photosensor. The most effective way is to make the incident light that has passed through the photosensor enter the photosensor, thereby improving the sensitivity of the solid-state imaging device.
【図１】実施例の固体撮像素子の部分平面図である。FIG. 1 is a partial plan view of a solid-state imaging device according to an embodiment.
【図２】図１における［２］−［２］線方向の断面図で
ある。FIG. 2 is a sectional view taken along line [2]-[2] in FIG.
【図３】図１における［３］−［３］線方向の断面図で
ある。FIG. 3 is a sectional view taken along line [3]-[3] in FIG.
【図４】図５と共に実施例の固体撮像素子の製造プロセ
スを示す図である。FIG. 4 is a diagram showing a manufacturing process of the solid-state imaging device of the embodiment together with FIG. 5;
【図５】図４と共に実施例の固体撮像素子の製造プロセ
スを示す図である。FIG. 5 is a diagram showing a manufacturing process of the solid-state imaging device of the embodiment together with FIG. 4;
【図６】変形例の固体撮像素子の部分平面図である。FIG. 6 is a partial plan view of a solid-state imaging device according to a modified example.
【図７】図６における［７］−［７］線方向の断面図で
ある。FIG. 7 is a sectional view taken along the line [7]-[7] in FIG.
【図８】図６における［８］−［８］線方向の断面図で
ある。8 is a sectional view taken along the line [8]-[8] in FIG.
【図９】他の変形例の固体撮像素子の部分平面図であ
る。FIG. 9 is a partial plan view of a solid-state imaging device according to another modification.
【図１０】図９における［１０］−［１０］線方向の断
面図である。10 is a sectional view taken along the line [10]-[10] in FIG.
【図１１】固体撮像素の概略的な構成を示す平面FIG. 11 is a plan view showing a schematic configuration of a solid-state image sensor;
【図１２】従来例の固体撮像素子の部分平面FIG. 12 is a partial plan view of a conventional solid-state imaging device.
【図１３】図１２における［１３］−［１３］線方向の
断面13 is a cross section taken along line [13]-[13] in FIG.
【図１４】図１２における［１４］−［１４］線方向の
断面14 is a cross section taken along the line [14]-[14] in FIG.
【図１５】他の従来例の固体撮像素子の受光部の縦断面FIG. 15 is a longitudinal sectional view of a light receiving section of another conventional solid-state imaging device.
１……固体撮像素子、１１……半導体基板、２１……フ
ォトセンサ、２５……低反射膜、２５ｃ……低反射膜の
欠落箇所、２７……金属遮光膜、２７ｃ……受光窓、２
８……保護膜。DESCRIPTION OF SYMBOLS 1 ... Solid-state image sensor, 11 ... Semiconductor substrate, 21 ... Photosensor, 25 ... Low reflection film, 25c ... Missing part of low reflection film, 27 ... Metal light shielding film, 27c ... Light receiving window, 2
8 ... Protective film.
フロントページの続き Ｆターム(参考） 4M118 AA04 AA06 AB01 BA10 CA03 CA34 CB13 CB14 FA06 FA26 FA35 GB11 GC09 GC11 GD04 5C024 CX41 CY47 GX02 GY05 GZ34Continued on front page F-term (reference) 4M118 AA04 AA06 AB01 BA10 CA03 CA34 CB13 CB14 FA06 FA26 FA35 GB11 GC09 GC11 GD04 5C024 CX41 CY47 GX02 GY05 GZ34
Claims (8)
部のフォトセンサをマトリックス状に配置し、前記半導
体基板の表面のゲート絶縁膜に前記フォトセンサの上方
を避けて転送電極を形成し、更に前記転送電極および前
記フォトセンサ上に形成された層間絶縁膜を介して、前
記フォトセンサの上方に受光窓を有する遮光膜を形成し
て構成される固体撮像素子において、 前記フォトセンサ面での光の反射率を低下させる低反射
膜が前記フォトセンサ上の前記ゲート絶縁膜と前記層間
絶縁膜との間に前記受光窓より広い面積を占めて形成さ
れていることを特徴とする固体撮像素子。1. A photosensor of a light receiving portion as a pixel is arranged in a matrix on a surface portion of a semiconductor substrate, and a transfer electrode is formed on a gate insulating film on a surface of the semiconductor substrate so as to avoid a portion above the photosensor, Further, in a solid-state imaging device formed by forming a light-shielding film having a light-receiving window above the photosensor via the transfer electrode and an interlayer insulating film formed on the photosensor, A solid-state imaging device, wherein a low-reflection film for reducing light reflectance is formed between the gate insulating film and the interlayer insulating film on the photosensor so as to occupy a larger area than the light-receiving window. .
部分的な欠落箇所が設けられていることを特徴とする請
求項１に記載の固体撮像素子。2. The solid-state imaging device according to claim 1, wherein the low reflection film is provided with a partially missing portion that does not overlap with the light receiving window.
が形成されていることを特徴とする請求項２に記載の固
体撮像素子。3. The solid-state imaging device according to claim 2, wherein a film for supplying hydrogen is formed above the low reflection film.
する光の波長に応じて膜厚または屈折率を変えて形成さ
れていることを特徴とする請求項１に記載の固体撮像素
子。4. The solid-state imaging device according to claim 1, wherein the low-reflection film is formed by changing a film thickness or a refractive index according to a wavelength of light incident on the photosensor.
部のフォトセンサをマトリックス状に配置し、前記半導
体基板の表面のゲート絶縁膜に前記フォトセンサの上方
を避けて転送電極を形成し、更に前記転送電極および前
記フォトセンサ上に形成された層間絶縁膜を介して、前
記フォトセンサの上方に受光窓を有する遮光膜を形成し
て構成される固体撮像素子の製造方法において、 前記フォトセンサ面での光の反射率を低下させる低反射
膜を前記フォトセンサ上の前記ゲート絶縁膜と前記層間
絶縁膜との間に前記受光窓より大きい面積で形成させる
ことを特徴とする固体撮像素子の製造方法。5. A photosensor of a light receiving portion as a pixel is arranged in a matrix on a surface portion of a semiconductor substrate, and a transfer electrode is formed on a gate insulating film on a surface of the semiconductor substrate so as to avoid above the photosensor, Further, in the method for manufacturing a solid-state imaging device, a light-shielding film having a light receiving window is formed above the photosensor via the transfer electrode and an interlayer insulating film formed on the photosensor. A solid-state imaging device, wherein a low-reflection film that reduces the reflectance of light on a surface is formed between the gate insulating film and the interlayer insulating film on the photosensor with an area larger than the light-receiving window. Production method.
避けて部分的な欠落箇所を設けることを特徴とする請求
項５に記載の固体撮像素子の製造方法。6. The method for manufacturing a solid-state imaging device according to claim 5, wherein a partially missing portion is provided in the low reflection film so as to avoid overlapping with the light receiving window.
を形成させることを特徴とする請求項６に記載の固体撮
像素子の製造方法。7. The method according to claim 6, wherein a film for supplying hydrogen is formed above the low reflection film.
する光の波長に応じて膜厚または屈折率を変えて形成さ
せることを特徴とする請求項５に記載の固体撮像素子の
製造方法。8. The method according to claim 5, wherein the low reflection film is formed by changing a film thickness or a refractive index in accordance with a wavelength of light incident on the photosensor.
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| JP2001000653A JP4691781B2 (en) | 2001-01-05 | 2001-01-05 | Solid-state imaging device and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001000653A JP4691781B2 (en) | 2001-01-05 | 2001-01-05 | Solid-state imaging device and manufacturing method thereof |
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Cited By (2)
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|---|---|---|---|---|
| JP2006179581A (en) * | 2004-12-21 | 2006-07-06 | Fuji Film Microdevices Co Ltd | Solid-state imaging device and its manufacturing method |
| JP2009088261A (en) * | 2007-09-28 | 2009-04-23 | Fujifilm Corp | Back irradiation type solid-state imaging element, and manufacturing method thereof |
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| JPH04152674A (en) * | 1990-10-17 | 1992-05-26 | Sony Corp | Solid-state image pickup device |
| JPH10256518A (en) * | 1997-01-09 | 1998-09-25 | Sony Corp | Solid state imaging element |
| JPH10284709A (en) * | 1997-04-07 | 1998-10-23 | Nec Corp | Solid-state image-sensing device and manufacture therefor |
| JPH11121728A (en) * | 1997-10-14 | 1999-04-30 | Sony Corp | Solid-state image pick-up device |
| JP2000012817A (en) * | 1998-06-24 | 2000-01-14 | Nec Corp | Solidstate image pickup device and manufacture thereof |
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2001
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| JPH04152674A (en) * | 1990-10-17 | 1992-05-26 | Sony Corp | Solid-state image pickup device |
| JPH10256518A (en) * | 1997-01-09 | 1998-09-25 | Sony Corp | Solid state imaging element |
| JPH10284709A (en) * | 1997-04-07 | 1998-10-23 | Nec Corp | Solid-state image-sensing device and manufacture therefor |
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| JP2006179581A (en) * | 2004-12-21 | 2006-07-06 | Fuji Film Microdevices Co Ltd | Solid-state imaging device and its manufacturing method |
| JP2009088261A (en) * | 2007-09-28 | 2009-04-23 | Fujifilm Corp | Back irradiation type solid-state imaging element, and manufacturing method thereof |
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Also Published As
| Publication number | Publication date |
|---|---|
| JP4691781B2 (en) | 2011-06-01 |
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