JP4696104B2 - Back-illuminated solid-state imaging device and manufacturing method thereof - Google Patents

Description

  The present invention relates to a back-illuminated solid-state imaging device and a manufacturing method thereof, and more particularly to a back-illuminated solid-state imaging device having a structure suitable for performing high-sensitivity imaging with high light utilization efficiency and a manufacturing method thereof.

  Solid-state imaging devices such as a CMOS image sensor and a CCD image sensor include a front side illumination type and a back side illumination type. One side of a semiconductor substrate on which a signal readout circuit (a transistor circuit and wiring layer for a CMOS image sensor, a charge transfer path including wiring for a CCD image sensor), which is a main electronic element of an image sensor, is formed (this surface is The surface irradiation type is the same plane as “front side” and has a structure for receiving incident light from a subject.

  On the other hand, the back-illuminated type, as described in, for example, Patent Document 1 below, receives incident light from a subject on the surface opposite to the semiconductor substrate surface side on which the signal readout circuit is formed, that is, the back surface. A structure that receives light. The back-illuminated type has the advantages that the light receiving area can be widened compared to the front-side illuminated type, and the light utilization efficiency is high and the sensitivity is high.

JP 2006-32497 A

  However, even though the back-illuminated solid-state image sensor has higher light utilization efficiency and higher sensitivity than the front-illuminated solid-state image sensor, in recent solid-state image sensors that have advanced pixel miniaturization, further light It is necessary to increase the use efficiency.

  An object of the present invention is to provide a back-illuminated solid-state imaging device with high light utilization efficiency and high sensitivity, and a method for manufacturing the same.

According to the method of manufacturing the backside illumination type solid-state imaging device of the present invention, a plurality of pixels are formed in a two-dimensional array on the surface portion of the semiconductor substrate, and the incident light of the field light incident from the backside of the semiconductor substrate is used. In the method of manufacturing a backside illumination type solid-state imaging device in which the pixel stores generated signal charges, the antireflection film is provided on a central portion of the light receiving surface of the semiconductor substrate by stacking an antireflection film on the backside of the semiconductor substrate. The film thickness of the film is thick, and the film thickness of the antireflection film provided in the peripheral portion is thin.

The method for manufacturing a backside illumination type solid-state imaging device according to the present invention is characterized in that the light receiving surface is divided into a plurality of regions from a central portion to a peripheral portion, and the film thickness of the antireflection film is controlled for each region .

  The film thickness of the backside illumination type solid-state imaging device of the present invention is such that the optical path length of the light transmitted through the antireflection film is λ / 4 or an odd multiple thereof when the wavelength of the light is λ. It is formed.

  In the manufacturing method of the backside illumination type solid-state imaging device of the present invention, a color filter is formed on the antireflection film corresponding to the pixel, and the film thickness of the antireflection film for each pixel is the color filter for each pixel. It is characterized by being formed for each color.

  The method for manufacturing a backside illumination type solid-state imaging device according to the present invention is characterized in that the film thickness is increased as the wavelength of light transmitted through the color filter is longer.

  In the manufacturing method of the backside illumination type solid-state imaging device of the present invention, the film thickness of the antireflection film provided corresponding to a certain color pixel of the color filter is set to n · λ / 4 (n is an odd number, λ is incident). Light wavelength), the film thickness of the antireflection film provided corresponding to the adjacent pixel provided with the color filter of a different color is m · λ / 4 (m ≠ n odd number) It is characterized by that.

  According to another aspect of the present invention, there is provided a method for manufacturing a backside illumination type solid-state imaging device, comprising: a planarizing film that is formed first when viewed from the semiconductor substrate, and a planarizing film that absorbs a step of the antireflection film is formed on the planarizing film. The planarizing film is provided between the layers where the difference between the refractive index of the material provided in the upper layer and the lower layer and the refractive index of the planarizing film is the smallest.

  In the method for manufacturing a backside illumination type solid-state imaging device according to the present invention, the semiconductor substrate is silicon, and the antireflection film is a single layer film of silicon nitride.

  In the method for manufacturing a backside illumination type solid-state imaging device according to the present invention, the antireflection film is a multilayer film.

  In the manufacturing method of the backside illumination type solid-state imaging device of the present invention, instead of the color filter, the antireflection film that selectively transmits only the wavelength of light transmitted through the color filter and reflects light in other wavelength ranges is provided. It is provided.

  The back-illuminated solid-state imaging device of the present invention has a plurality of pixels formed in a two-dimensional array on the front surface of a semiconductor substrate, and a signal generated according to the amount of incident field light incident from the back surface of the semiconductor substrate. A back-illuminated solid-state imaging device in which charges are accumulated in the pixels is manufactured by any one of the manufacturing methods described above.

  According to the present invention, since the antireflection film is provided on the light receiving surface on the back side, the reflectance of incident light on the back side of the semiconductor substrate can be suppressed, and more incident light is introduced into the photoelectric conversion region in the semiconductor substrate. Therefore, it is possible to perform imaging with high light utilization efficiency and high sensitivity.

  Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

  FIG. 1 is a schematic cross-sectional view of a backside illumination type solid-state imaging device according to the first embodiment of the present invention. The backside illumination type solid-state imaging device 100 of this embodiment is an interline type CCD, and a vertical charge transfer path (VCCD) 21 and a photodiode 22 are formed on the front surface side of the p-type semiconductor substrate 1, and on the back surface side, An antireflection film 27, a color filter (red (R), green (G), blue (B)) layer 23 and a microlens 24 are laminated.

A high-concentration p ⁺⁺ layer 25 is formed on the back surface side surface portion of the semiconductor substrate 1, and the high-concentration p ⁺⁺ layer 25 is grounded. An oxide film 26 transparent to incident light is laminated on the high-concentration p ⁺⁺ layer 25, and in this embodiment, an antireflection film 27 is laminated thereon, and a color filter layer is further formed thereon. 23, a microlens (top lens) layer 24 is sequentially laminated. Each microlens 24 is formed so as to be focused on the center of a corresponding photodiode 22 provided at an opposing position.

  The color filter layer 23 is partitioned in units of pixels (photodiodes), and a light shielding member 28 for preventing color mixture between pixels is provided between adjacent partitions of the color filter layer 23 on the semiconductor substrate 1 side.

The vertical charge transfer path (VCCD) 21 formed on the surface side of the semiconductor substrate 1 includes an n ⁺ layer buried channel 31 and a silicon oxide film or ONO (oxide film − formed on the outermost surface side of the semiconductor substrate 1. The transfer electrode film 33 is formed through a gate insulating layer 32 made of an insulating film having a (nitride film-oxide film) structure.

  The vertical charge transfer path 21 is formed so as to extend in a direction perpendicular to a direction in which a horizontal charge transfer path (HCCD) (not shown) extends, similarly to the surface irradiation type solid-state imaging device, and a plurality of vertical charge transfer paths. 21 is formed. A plurality of photodiodes 22 are formed between adjacent vertical charge transfer paths 21 in a direction along the vertical charge transfer path 21 at a predetermined pitch.

In this embodiment, the photodiode 22 includes an n layer 35 formed on the surface side of the p-type semiconductor substrate 1 and an n ⁻ layer 36 formed thereunder. A thin p-type high concentration (p ⁺ ) surface layer 38 for dark current suppression is formed on the surface portion of the n layer 35, and an n ⁺ layer 39 is formed as a contact portion on the central surface portion of the surface layer 38. .

A p layer 41 having a higher p concentration than the substrate 1 is formed under the buried channel (n ⁺ layer) 31 of the vertical charge transfer path 21, and the n layer 31 and the p layer 41 are adjacent to the right side in the illustrated example. A p ⁺ region 42 as an element isolation band is formed between the first photodiode 22 and the second photodiode 22. Under each p layer 41, a p ⁻ region 42 having a higher concentration than that of the semiconductor substrate 1 is provided, and element isolation between adjacent photodiodes 22 is achieved. Each p ⁻ region 42 is provided at a location corresponding to the pixel partition portion, that is, the light shielding member 28 described above.

The p layer 41 formed below the buried channel 31 of the vertical charge transfer path 21 extends to the top of the surface end of the n layer 35 adjacent to the left in the illustrated example, and the p ⁺ surface layer 38 at this end is The position is set back from the position of the right end surface of the n layer 35. The left end surface of the transfer electrode film 33 extends so as to overlap the left end surface of the p layer 41, and the n layer 35 and the surface end portions of the transfer electrode film 33 and the p layer 41 slightly overlap. It has become.

  Such an overlap configuration is possible because the back-illuminated type has an area margin on the front surface side of the semiconductor substrate 1. In the surface irradiation type, since there is no area margin, the end portion of the transfer electrode film can be extended only to the position corresponding to the end portion of the photodiode, and the p layer cannot be interposed therebetween.

  If the p layer 41 is interposed between the transfer electrode film 33 and the n layer 35 as in this embodiment, the read voltage applied to the transfer electrode film (also used as the read electrode) 33 can be reduced. Thus, it is possible to reduce the power consumption of the CCD solid-state imaging device.

A transfer electrode film 33 made of, for example, a polysilicon film is formed on the insulating layer 32 formed on the outermost surface of the semiconductor substrate 1, and an insulating layer 45 is stacked thereon. Then, an opening is opened in the insulating layer 32 and 45 on the ^{n +} layer 39, the metal electrode 46 on the insulating layer 45 that are stacked, and ^{the n +} layer 39 and the electrode 46 is contact. The electrode 46 functions as an overflow drain of the backside illumination type solid-state imaging device 100.

  In the above-described embodiment, the CCD type back-illuminated solid-state image sensor has been described. However, a MOS-type back-illuminated solid-state image sensor such as a CMOS may be used. For the MOS type, a MOS transistor or a wiring layer may be formed on the surface side of the substrate 1 as a signal readout circuit instead of the vertical charge transfer path 21 and the overflow drain shown in FIG.

  When a subject image is picked up by the backside illumination type solid-state imaging device 100 having such a structure, incident light from the object scene enters from the backside of the semiconductor substrate 1. The incident light is collected by the microlens 24, passes through the color filter layer 23, and enters the semiconductor substrate 1. In the case of the present embodiment, since the antireflection film 27 is provided on the back surface of the semiconductor substrate 1, incident light enters the semiconductor substrate 1 with high efficiency.

  When the light condensed by the microlens 24 enters the semiconductor substrate 1, the incident light travels while condensing in the direction of the photodiode 22 corresponding to the microlens 24 and the color filter 23, and enters the semiconductor substrate 1. It is absorbed and photoelectrically converted to generate hole electron pairs.

In the back-illuminated solid-state imaging device 100, since the distance from the back surface of the semiconductor substrate 1 to the n region 22 constituting the photodiode is about 9 μm, incident light is provided on the front surface side of the semiconductor substrate 1. All are absorbed by the substrate 1 and photoelectrically converted before reaching the n ⁺ region, that is, the charge transfer path 21. Therefore, it is not necessary to shield the vertical charge transfer path 21 from light.

Electrons generated in the photoelectric conversion region (region from the p ⁺⁺ layer 25 to the n region 35) of each pixel are accumulated in the n region 35 in the pixel, and a read voltage is applied to the transfer electrode film 33 also serving as a read electrode. Then, the data is read from the n region 35 to the buried channel 31 on the right side in the example shown in FIG. Thereafter, the signal is transferred along the vertical charge transfer path 21 to a horizontal charge transfer path (HCCD) (not shown), and then transferred along the horizontal charge transfer path to an amplifier (not shown). This amplifier has a voltage value corresponding to the signal charge amount. The signal is output as a captured image signal.

When holes generated in the photoelectric conversion region of the p-type semiconductor substrate 1 fluctuate in the substrate 1, the hole sweeping unevenness occurs at the central portion and the peripheral portion of the light receiving surface (imaging region) in the back-illuminated solid-state imaging device 100. This causes a difference in pixel characteristics. However, in the back-illuminated solid-state imaging device 100 of the present embodiment, holes generated in the semiconductor substrate 1 can be absorbed by the p ⁺⁺ layer 25 provided on substantially the entire back surface and can be stably swept out to the ground. Therefore, it is possible to avoid image quality deterioration due to this hole sweeping unevenness.

  FIG. 2A is an explanatory diagram of an antireflection film portion according to the embodiment shown in FIG. Illustrations other than the antireflection film, the color filter, and the microlens are omitted.

  The backside illumination type solid-state imaging device 100 of the present embodiment is characterized in that an antireflection film 27 is provided on the light incident surface of the semiconductor substrate 1. In the structure shown in FIG. 2B in which the antireflection film 27 is not provided, incident light that has passed through the micro lens 24 having a refractive index of about “1.5” and has passed through the color filter 23 having a refractive index of about “1.6”. When entering the semiconductor substrate 1 having a refractive index of about “4”, the difference in refractive index is as large as “4-1.6”, so that the color filter 23 and the semiconductor substrate 1 (thickness of the oxide film 26 are small, and therefore need to be considered. The reflectance at the interface with the above becomes high.

  On the other hand, as shown in FIG. 2A, by providing the antireflection film 27 at the above-described interface, reflection at this interface can be prevented, and the light incident efficiency to the semiconductor substrate 1 can be increased. . As the refractive index of the antireflection film 27, since the refractive index of the silicon semiconductor substrate 1 is about “4”, a material of “√4”, that is, about “2” is preferable. An example of a material having this refractive index is silicon nitride. The film thickness of the antireflection film 27 is preferably ¼ of the wavelength λ of incident light that suppresses reflection, that is, λ / 4 (or an odd multiple thereof).

  In this manner, by providing the antireflection film 27 on the light incident surface of the semiconductor substrate 1, incident light can be taken into the semiconductor substrate 1 with high efficiency, and further high-sensitivity imaging can be performed.

  FIG. 3A is an explanatory diagram of an antireflection film portion of the backside illumination type solid-state imaging device according to the second embodiment of the present invention. Other configurations are the same as those in FIG. 1, and the illustration is omitted (the same applies to the following embodiments).

  As described with reference to FIG. 2A, if the antireflection film 27 is provided, reflection at the silicon interface can be prevented. When a color image is picked up by a single-plate solid-state image pickup device, red (R), green (G), and blue (B) color filters 23 are stacked for each pixel (photodiode 22). The wavelength of light that passes through the color filters R, G, and B and enters the semiconductor substrate 1 is different for each color of the color filter.

  As shown in FIG. 3B, the difference between the color filters R, G, and B is ignored, and the antireflection films 27R, 27G, and 27B having the same film thickness are used in the color filters R, G, and B. Of course, the light incidence rate to the semiconductor substrate 1 can be improved from the solid-state imaging device shown in FIG. 2B without the antireflection film.

  However, in the present embodiment, as shown in FIG. 3A, the thicknesses of the antireflection films 27R, 27G, and 27B are controlled in consideration of the difference between the color filters R, G, and B. Since the spectral characteristics of the light transmitted through the color filters R, G, and B are bell-shaped peaks, the peak positions of the spectral characteristics of red, green, and blue (or a predetermined range centered on each peak position (color signal) The film thicknesses of the antireflection films 27R, 27G, and 27B are controlled to ¼ (or an odd multiple thereof) of the wavelengths λr, λg, and λb of the average value) within the range desired to be extracted.

  In this manner, by finely controlling the film thickness of the antireflection films 27R, 27G, and 27B for each color of the color filter, the light incident rate for each color pixel can be increased and the light incident rate for each color pixel can be made uniform. Can also be achieved.

  If the antireflection films 27R, 27G, and 27B are each made of the single-layer film of silicon nitride described with reference to FIG. 2, the relationship between the thicknesses becomes 27R> 27G> 27B. However, the antireflection film does not need to have a single layer structure, and can be formed of a multilayer film of various materials. In the case of forming with a multilayer film, the above magnitude relationship does not become a simple formula, and therefore, it is preferable to control it according to the material used, unlike the case of a single layer structure.

  FIG. 4 is an explanatory diagram of an antireflection film portion of a backside illumination type solid-state imaging device according to the third embodiment of the present invention. In the second embodiment described above, the thicknesses of the antireflection films 27R, 27G, and 27B provided on the color pixels are adjusted for the colors of the color filters R, G, and B, respectively. However, this film thickness is defined by the thickness in the direction perpendicular to the film surface.

  Incident light from a solid-state imaging device mounted on a digital camera or the like enters through a photographing lens, and therefore, light other than light on the central optical axis of the photographing lens becomes oblique incident light. That is, the light enters the central region of the light receiving surface of the image sensor substantially perpendicularly, but becomes obliquely incident light on the peripheral region of the light receiving surface.

  In order for the antireflection film to have an antireflection function, the film thickness must be λ / 4 (or an odd multiple thereof). However, the length of λ / 4 actually needs to be calculated by the optical path length, and the above “film thickness” is based on the premise that light enters the antireflection film perpendicularly. That is, in the case of obliquely incident light, the actual optical path length can be secured even if the “film thickness” perpendicular to the surface of the antireflection film is thin.

  Therefore, in the embodiment shown in FIG. 4, the thickness of the antireflection films 27R, 27G, and 27B (thickness in the direction perpendicular to the surface) in the central region of the light receiving surface of the solid-state imaging device is large, and the thickness of the peripheral region is small. By doing so, it is possible to obtain an optimal antireflection function over the entire light receiving surface even with obliquely incident light.

  Ideally, the film thickness of the antireflection film should be defined by calculating the incident angle for each position of the light receiving surface, for each pixel, and for each color. However, if the film thickness control is actually performed for each pixel, the manufacturing cost It becomes expensive. For this reason, it is preferable to divide the light receiving surface into a plurality of regions, for example, “central part”, “intermediate part” and “peripheral part”, and to control the film thickness respectively.

  In this embodiment, the film thickness control is performed for each color, but as shown in FIG. 3B, the film thickness control is performed for each position of the light receiving surface without performing the film thickness control for each color. Just fine.

  FIG. 5 is an explanatory diagram of an antireflection film portion of a backside illumination type solid-state imaging device according to the fourth embodiment of the present invention. In a single-plate solid-state imaging device, there are cases where adjacent pixels have different colors. In this case, it is assumed that the red pixel, the green pixel, and the blue pixel are adjacent to each other. In the embodiment described above, when n is an odd number, the red pixel antireflection film 27R has a thickness of n · λr / 4, the green pixel has an antireflection film 27G with a thickness of n · λg / 4, and the blue pixel has a thickness of n · λr / 4. The film thickness of the antireflection film 27B is n · λb / 4. That is, the same number n was used.

  On the other hand, in the present embodiment, the film thicknesses of the antireflection films 27R, 27G, and 27B of adjacent pixels having different colors are set to “n · λr / 4”, “m · λg / 4”, “q · λb / 4” ( Here, n ≠ m ≠ q is an odd number), and preferably, the numerical values between n, m, and q of adjacent pixels are greatly shifted. For example, n = 1, m = 7, and q = 11.

  However, for example, m is not selected such that m times λg / 4 matches an odd multiple of 1/4 of λr and λb. In other words, when light that has passed through the color filter of a certain pixel becomes stray light and enters the antireflection film of the adjacent pixel, color mixing occurs. At this time, stray light that has entered the antireflection film of the adjacent pixel The reflectance is increased without preventing reflection. Thereby, the color mixing is reduced.

  FIG. 6 is an explanatory diagram of an antireflection film portion of a backside illumination type solid-state imaging device according to the fifth embodiment of the present invention.

  When the antireflection film is provided as in the above-described embodiments, a step is generated for each pixel or for each position. For this reason, usually, a flattening film is laminated on the portion where the step is generated, and a color filter or the like is laminated thereon.

  In the conventional case, as shown in FIG. 6B, the flattening film 51 is laminated immediately above (on the back surface side) the antireflection films 27R, 27G, and 27B that cause the step. The material of the upper and lower sides of the film 51 was not considered.

  However, in this embodiment, as shown in FIG. 6A, the position where the planarizing film 51 is provided is provided at a position where the refractive index difference between the planarizing film 51 and the material above and below becomes the smallest. In the illustrated embodiment, since the refractive index of the planarizing film 51 is about “1.4”, it is provided between the microlens 24 having a refractive index of 1.5 and the color filter 23 having a refractive index of 1.6. Yes. Thereby, the reflectance as a total of the incident light which injects into the semiconductor substrate 1 from a microlens can be lowered | hung, and the transmittance | permeability can be raised.

  FIG. 7 is an explanatory diagram of an antireflection film portion of a backside illumination type solid-state imaging device according to the sixth embodiment of the present invention. As the antireflection films 27R, 27G, and 27B of the present embodiment, antireflection films that transmit only a specific wavelength component are used.

  That is, an antireflection film 27R that transmits red light and blocks other color light, an antireflection film 27G that transmits green light and blocks other color light, and an antireflection film 27B that transmits blue light and blocks other color light. Use.

  For example, in a three-plate color solid-state imaging device, incident light is divided into R light, G light, and B light using a prism, and each light is incident on a corresponding solid-state imaging device. If the antireflection films 27R, 27G, and 27B are formed using the reflective film material used for the prism, a color filter is not necessary.

  The back-illuminated solid-state imaging device according to the present invention is useful as a solid-state imaging device mounted on a digital camera or the like that performs high-sensitivity imaging because the incident light rate of incident light on a semiconductor substrate is high.

1 is a schematic cross-sectional view of a backside illumination type solid-state imaging device according to a first embodiment of the present invention. It is explanatory drawing of the anti-reflective film part shown in FIG. It is explanatory drawing of the anti-reflective film part of the backside illumination type solid-state image sensor concerning 2nd Embodiment of this invention. It is explanatory drawing of the anti-reflective film part of the backside illumination type solid-state image sensor which concerns on 3rd Embodiment of this invention. It is explanatory drawing of the anti-reflective film part of the backside illumination type solid-state image sensor which concerns on 4th Embodiment of this invention. It is explanatory drawing of the anti-reflective film part of the backside illumination type solid-state image sensor which concerns on 5th Embodiment of this invention. It is explanatory drawing of the anti-reflective film part of the backside illumination type solid-state image sensor concerning 6th Embodiment of this invention.

Explanation of symbols

1 Semiconductor substrate 22 n region (photodiode)
23 Color filter 24 Microlens 27, 27R, 27G, 27B Antireflection film 28 Light shielding member 51 Flattening film 100 Back-illuminated solid-state imaging device

Claims (11)

  A back-illuminated solid in which a plurality of pixels are formed in a two-dimensional array on the front surface of a semiconductor substrate, and the pixels accumulate signal charges generated in accordance with the amount of incident field light incident from the back side of the semiconductor substrate In the image pickup device manufacturing method, an antireflection film is laminated on the back surface side of the semiconductor substrate, and the antireflection film provided at the central portion of the light receiving surface of the semiconductor substrate is thick and provided at the peripheral portion. A method of manufacturing a backside illumination type solid-state imaging device, wherein the film thickness is reduced. 2. The method of manufacturing a backside illumination type solid-state imaging device according to claim 1, wherein the light receiving surface is divided into a plurality of regions from a central portion to a peripheral portion, and the film thickness of the antireflection film is controlled for each region. . 2. The film thickness according to claim 1, wherein the optical path length of the light transmitted through the antireflection film is λ / 4 or an odd multiple thereof when the wavelength of the light is λ. 2. A method for producing a back-illuminated solid-state imaging device according to 2. 2. A color filter is formed on the antireflection film corresponding to the pixel, and a film thickness of the antireflection film for each pixel is formed for each color of the color filter for each pixel. The manufacturing method of the back irradiation type solid-state image sensor of any one of thru | or 3 thru | or 3 . The method of manufacturing a backside illumination type solid-state imaging device according to claim 4 , wherein the film thickness is increased as the wavelength of light transmitted through the color filter is longer . When the film thickness of the antireflection film provided corresponding to a pixel of a certain color of the color filter is n · λ / 4 (where n is an odd number and λ is the wavelength of incident light), 6. The film thickness of the antireflection film provided corresponding to the adjacent pixel provided with the color filter is set to m · λ / 4 (m ≠ n odd number). A manufacturing method of a back irradiation type solid-state image sensing device given in 2. A planarizing film that is formed first when viewed from the semiconductor substrate, the planarizing film that absorbs the step of the antireflection film, the refractive index of the material provided in the upper and lower layers of the planarizing film, and the planarization The method for manufacturing a backside illumination type solid-state imaging device according to any one of claims 1 to 6 , wherein the planarizing film is provided between the layers having the smallest difference from the refractive index of the film . 8. The method of manufacturing a backside illumination type solid-state imaging device according to claim 1, wherein the semiconductor substrate is silicon and the antireflection film is a single layer film of silicon nitride . The method for manufacturing a backside illumination type solid-state imaging device according to any one of claims 1 to 7, wherein the antireflection film is a multilayer film . 5. The back surface according to claim 4, wherein, instead of the color filter, the antireflection film that selectively transmits only the wavelength of light transmitted through the color filter and reflects light in other wavelength ranges is provided. Manufacturing method of irradiation type solid-state imaging device.   A back-illuminated solid in which a plurality of pixels are formed in a two-dimensional array on the front surface of a semiconductor substrate, and the pixels accumulate signal charges generated in accordance with the amount of incident field light incident from the back side of the semiconductor substrate An imaging device manufactured by the manufacturing method according to any one of claims 1 to 10, wherein the backside illumination type solid-state imaging device.

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