CN103730477A - Vignetting compensation based imaging sensor pixel array and forming method thereof - Google Patents
Vignetting compensation based imaging sensor pixel array and forming method thereof Download PDFInfo
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Abstract
The invention discloses a vignetting compensation based imaging sensor pixel array and a forming method thereof. The pixel array comprises a plurality of pixel units. Each pixel unit comprises a photodiode, a pass-transistor grid electrode and a suspension drain electrode, wherein the photodiode generates electric charges based on incident light, the pass-transistor grid electrode transfers the electric charges generated by the photodiode to the suspension drain electrode, and the injection region of the photodiode overlaps with the pass-transistor grid electrode. The overlapping areas of the photodiodes and the corresponding pass-transistor grid electrodes of the pixel units become smaller gradually from the edge of the pixel array to the center of the pixel array. The invention further provides the forming method of the vignetting compensation based imaging sensor pixel array. The method can effectively compensate an image vignetting so as to improve image quality.
Description
Technical field
The present invention relates to field of image sensors, relate in particular to a kind of image sensor pixel array based on dark angle compensation and forming method thereof.
Background technology
Conventionally, imageing sensor refers to the device that light signal is converted to the signal of telecommunication.Imageing sensor comprises charge coupled device (Charge Coupled Device is called for short CCD) and complementary metal oxide semiconductors (CMOS) (Complementary Metal-Oxide-Semiconductor Transistor is called for short CMOS) image sensor chip
Cmos image sensor compares with traditional ccd sensor the low-power consumption having, low cost and with the features such as CMOS process compatible, therefore obtain applying more and more widely.Now cmos image sensor is not only for consumer electronics field, for example miniature digital camera (DSC), mobile phone camera, in video camera and digital single anti-(DSLR), and at automotive electronics, monitoring, the fields such as biotechnology and medical science are also widely used.
For cmos image sensor, how improving picture quality is a very important factor in Design and manufacture.Be illustrated in figure 1 existing imageing sensor, its pixel cell adopts visits Asia (Bayer) form arrangement, wherein, the pixel cell of R representative induction red light, the pixel cell of G induction green light, the pixel cell of B induction blue light, finally by the color of image of RGB tri-looks synthetic rediscover.The structure cutaway view of image sensor pixel cells array middle position as shown in Figure 2, wherein cmos image sensor comprises photodiode 101 and the multiple MOS transistor for opto-electronic conversion, photodiode 101 is photosensitive units, collection and the opto-electronic conversion of realization to light, other MOS transistor is control unit, main realization is chosen photodiode, the control that resets and read.MOS transistor comprises a transmission transistor.Transfer transistor gate 102 is carried to suspending drain 103 from photodiode 101 for controlling electric charge, and suspending drain 103 for electric charge to voltage transitions.In addition, cmos image sensor also comprises metal interconnecting wires 105a, 105b, 105c, for the dielectric layer 104 of isolating between metal interconnecting wires, and for the colour filter 106 of RGB color separation, and for the lenticule 107 of light focusing.Specifically, in the cmos image sensor course of work, photodiode 101 by the incident light of collecting convert to electric charge and conversion after charge accumulated in photodiode 101, after photoelectric conversion process finishes, by pulse signal, transfer transistor gate 102 is opened, the electric charge of accumulation in photodiode 101 is all transported in suspending drain 103, and suspending drain 103 is converted to the quantity of electric charge of accumulation the variable quantity of voltage.On suspending drain 103, voltage variety is directly proportional to the quantity of electric charge that is sent to suspending drain 103 from photodiode 101.The transmission of transfer tube control electronics from photodiode to suspending drain in the structure of pixel cell, the performance important of the characteristic of transfer tube to pixel cell.
Figure 3 shows that the domain structure of conventional cmos image sensor pixel cell, it comprises the injection region 101a and active area 101b, transfer transistor gate 102 and the suspending drain 103 that are used to form photodiode, wherein, photodiode injection region 101a and transfer transistor gate 102 have an overlay region 108, and the size of this overlay region 108 can affect the efficiency of transmission of transmission transistor.The response characteristics to light curve that is illustrated in figure 4 conventional pixel cell, its transverse axis is illumination, represents incident light intensity, the longitudinal axis is output signal, output signal increases with the increase of illumination, and when illumination arrives certain value, output signal is saturated, i.e. illumination continuation increases but output signal is constant.In conventional pel array, all pixel cells are used identical domain structure, the photodiode injection region of all pixel cells and the overlapping area of transfer transistor gate overlay region are identical, and therefore all pixel cells are also identical to the response characteristic of light.But the incident light receiving due to image edge pixels is fewer than image center pixel, the illumination that namely edge pixel obtains is less, therefore cause the output signal of pixel cell of image border less, in imaging results, be exactly that to show the brightness of image border darker, the namely phenomenon at the dark angle of image.
Shown in Fig. 5, be the structure cutaway view of image sensor pixel array marginal position, the pixel cell of its pixel cell structure and middle position is in full accord.At the incident light of sensor pixel array marginal position, there is certain incident angle, therefore cannot be collected completely by photodiode 101, the voltage signal of generation a little less than.The uneven distribution of angle of incident light on pel array face, causes inhomogeneous on whole imaging plane of photovoltaic reaction, makes the marginal position of the image obtaining seem darker than centre position, and this phenomenon is commonly referred to as camera lens shade or dark corner effect.Experiment is found to be greater than 20 while spending when the incidence angle of incident ray, and the brightness of image border is only equivalent to 78% of image centre position brightness, even still less.So need to come in the middle of removal of images and this problem of edge brightness skewness by the method that correct at dark angle in cmos image sensor.
Be illustrated in figure 6 in prior art a kind of for eliminating the structure cutaway view of cmos image sensor pel array of the dark corner effect in edge, it is by the lenticule 107 of marginal position and the displacement of colour filter 106, make incident light can focus on the surface of marginal position photodiode 101, to reduce the dark corner effect of image.But the situation less at focal length is little, the angle of incident ray is larger, and the displacement of lenticule and colour filter is subject to the restriction in whole pixel unit array space, and displacement is very limited, effectively the dark corner effect of compensating images.
Summary of the invention
Object of the present invention is, for the problems referred to above, proposed a kind of image sensor pixel array based on dark angle compensation and forming method thereof, can effectively to the dark angle of image, compensate, to improve picture quality.
For achieving the above object, a kind of image sensor pixel array based on dark angle compensation of the present invention, comprise multiple pixel cells, each pixel cell comprises photodiode, transfer transistor gate and suspending drain, described photodiode produces electric charge based on incident light, and the electric charge that described transfer transistor gate produces described photodiode is transferred to its suspending drain, wherein, the injection region of described photodiode and transfer transistor gate have an overlay region, and
The area of the photodiode injection region of described multiple pixel cells and the overlay region of transfer transistor gate successively decreases to center from the edge of described pel array.
In preferred or optional embodiment, the area of the photodiode injection region of described multiple pixel cells and the overlay region of transfer transistor gate successively decreases to central linear from the edge of described pel array.
In preferred or optional embodiment, the maximum area of described overlay region and the ratio range of minimum area are 1.05～2.
In preferred or optional embodiment, the photodiode injection region area of described multiple pixel cells is identical; The transfer transistor gate area of described multiple pixel cells is identical.
In preferred or optional embodiment, the suspending drain area of described multiple pixel cells is identical.
In preferred or optional embodiment, described pel array comprises dielectric layer, metal interconnecting wires, colour filter and lenticule.
In addition, the present invention also provides a kind of formation method of the image sensor pixel array based on dark angle compensation, and it comprises:
In Semiconductor substrate, form the suspending drain of multiple pixel cells;
Dielectric layer deposited, and on described dielectric layer, form multiple transfer transistor gate;
Above described dielectric layer and transfer transistor gate, form patterned photoresist layer;
Take described patterned photoresist layer as mask, carry out Implantation, to form multiple photodiodes injection region, wherein, the area of the overlay region of described multiple photodiodes injection region and transfer transistor gate successively decreases to center from the edge of described pel array.
In preferred or optional embodiment, the area of the photodiode injection region of described multiple pixel cells and the overlay region of transfer transistor gate successively decreases to central linear from the edge of described pel array, and the maximum area of described overlay region and the ratio range of minimum area are 1.05～2.
In preferred or optional embodiment, described patterned photoresist layer has multiple unequal gaps, and the area of the transfer transistor gate exposing between described multiple gap successively decreases to center from the edge of described pel array.
In preferred or optional embodiment, the transfer transistor gate area of described multiple pixel cells is identical; The suspending drain area of described multiple pixel cells is identical.
Compared with prior art, the present invention has the following advantages:
Image sensor pixel array based on dark angle compensation of the embodiment of the present invention and forming method thereof, by the area of photodiode injection region and transfer transistor gate overlay region is successively decreased to center from the marginal position of this pel array, carry out the size of corresponding change pixel cell efficiency of transmission, make the pixel cell efficiency of transmission of cmos image sensor pel array marginal position higher, thereby in the case of the incident light of cmos image sensor pel array marginal position cannot be collected by photodiode completely, the pixel cell of this array edges still can obtain the output voltage identical with the pixel cell of array middle position to be changed, effective compensation the dark corner effect at cmos image sensor pel array edge.
Accompanying drawing explanation
For can clearer understanding objects, features and advantages of the present invention, below with reference to accompanying drawing, preferred embodiment of the present invention is described in detail, wherein:
Fig. 1 is image sensor array;
Fig. 2 is the structure cutaway view of image sensor pixel array middle position in prior art;
Fig. 3 is the domain structure of image sensor pixel cells in prior art;
Fig. 4 is the response characteristics to light curve of image sensor pixel cells in prior art;
Fig. 5 is the structure cutaway view of image sensor pixel array marginal position in prior art;
Fig. 6 is for eliminating the structure cutaway view of image sensor pixel array of the dark corner effect in edge in prior art;
Fig. 7 is the structure cutaway view of a kind of image sensor pixel array based on dark angle compensation of the present invention;
Fig. 8 is the domain structure of a kind of image sensor pixel array based on dark angle compensation of the present invention;
Fig. 9 is the response characteristics to light curve of a kind of image sensor pixel array based on dark angle compensation of the present invention;
Figure 10～Figure 12 is the cutaway view of the formation method of a kind of image sensor pixel array based on dark angle compensation of the present invention.
Embodiment
Some exemplary embodiments that embody feature & benefits of the present invention will describe in detail in the explanation of back segment.Be understood that the present invention can have various variations in different examples, it neither departs from the scope of the present invention, and explanation wherein and be shown in the use that ought explain in essence, but not in order to limit the present invention.
Compared with prior art, the present invention is based on image sensor pixel array of dark angle compensation and forming method thereof, by the area of photodiode injection region and transfer transistor gate overlay region is successively decreased to center from the marginal position of pel array, carry out the size of corresponding change pixel cell efficiency of transmission, it is the efficiency of transmission step-down gradually of the pixel cell of cmos image sensor pel array from marginal position to center, make the efficiency of transmission of pixel cell of cmos image sensor pel array marginal position higher, electric charge can all spread out of substantially, thereby in the case of the incident light of cmos image sensor pel array marginal position cannot be collected by photodiode completely, the pixel cell of array edges still can obtain the output voltage identical with the pixel cell of array middle position to be changed, effective compensation the dark corner effect at cmos image sensor pel array edge.
Above-mentioned and other technical characterictic and beneficial effect, be elaborated to a preferred embodiment that the present invention is based on image sensor pixel array of dark angle compensation and forming method thereof in connection with accompanying drawing 7-12.
Fig. 7 is the structure cutaway view of a kind of image sensor pixel array based on dark angle compensation of the present invention.
As shown in Figure 7, image sensor pixel array based on dark angle compensation comprises multiple pixel cells, each pixel cell comprises photodiode, transfer transistor gate and suspending drain, this photodiode produces electric charge based on incident light, the electric charge that this transfer transistor gate produces photodiode is transferred to its suspending drain, wherein, above-mentioned photodiode injection region and transfer transistor gate have an overlay region, and the area of the photodiode injection region of multiple pixel cells and the overlay region of transfer transistor gate successively decreases to center from the edge of described pel array.
Specifically, it comprises multiple pixel cells, and each pixel cell comprises photodiode 201, transfer transistor gate 202 and suspending drain 203.Photodiode 201 is built up and is produced electric charge based on incident light, and transfer transistor gate 202 is carried to suspending drain 203 from photodiode 201 for controlling electric charge, and 203 of the suspending drains charge number by accumulation is converted to the variable quantity of voltage.In the present embodiment, cmos image sensor pixel cell is 4-T structure, also comprises reset transistor, and source electrode is followed transistor and selected transistor etc., and these transistorized structures and manufacture method are well known to those skilled in the art, and therefore not to repeat here.Certainly, having less or more transistorized other pixel cell structures also can use.In addition, pixel cell also comprises dielectric layer 204, metal interconnecting wires 205a, 205b, 205c, colour filter 206 and lenticule 207; Above-mentioned photodiode injection region 201a and transfer transistor gate 202 have an overlay region 208, wherein, the area of the photodiode injection region 201a of multiple pixel cells and the overlay region 208 of transfer transistor gate 202 successively decreases to center from the marginal position of described pel array.
In the cmos image sensor course of work, photodiode 201 converts the incident light of collecting to electric charge, and changing later charge accumulated in photodiode 201, after photoelectric conversion process finishes, by pulse signal, transfer transistor gate 202 is opened, the electric charge of accumulation in photodiode 201 is all transported to suspending drain 203, and the voltage of suspending drain 203 changes because obtaining charge Q.
It should be noted that, please refer to Fig. 8, in the image sensor pixel array that the present invention is based on dark angle compensation, the area generation gradual change of the overlay region of photodiode injection region 201a and transfer transistor gate 202 in each pixel cell, specifically, the area of photodiode injection region 201a and transfer transistor gate 202 overlay regions successively decreases to center from pel array edge, the closer to array edges pixel cell, the area of photodiode injection region 201a and transfer transistor gate 202 overlay regions is larger, it is the area that the area of overlay region 208a is greater than overlay region 208b, the area of overlay region 208b is greater than the area of overlay region 208c, make the efficiency of transmission step-down gradually of the pixel cell from marginal position to center.Preferably, the area of photodiode injection region 201a and transfer transistor gate 202 overlay regions successively decreases from pel array edge to central linear and the maximum area of overlay region and the ratio range of minimum area are 1.05～2.When the incidence angle of incident ray is greater than 20 while spending, generally because the brightness of image border is generally only equivalent to 78% of image centre position brightness, therefore in one embodiment of this invention, now the ratio of the minimum area of the photodiode injection region 201a of edge pixel unit and the maximum area of transfer transistor gate 202 overlay regions and the photodiode injection region 201a of center pixel unit and transfer transistor gate 202 overlay regions can be 1.28:1.
Above-mentioned overlay region 208 areas are larger, the higher concrete reason of efficiency of transmission as shown in Figure 9, the response characteristics to light curve of a kind of image sensor pixel array based on dark angle compensation of the present invention, pass through as seen from Figure 9 the size of the overlay region that changes photodiode injection region 201a and transfer tube grid 202, can change the efficiency of transmission of transmission transistor, on response curve, show as the change of sensitivity.When the area of pixel cell overlay region 208 is larger, the more close suspending drain 203 in electric charge storage region of photodiode 201, efficiency of transmission in unit interval is higher, has more electric transmission to suspending drain 203, at equal illumination lower limb pixel cell, shows higher sensitivity.When overlay region 208 areas hour, the electric charge storage region of photodiode 201 from suspending drain 203 away from, efficiency of transmission in unit interval is lower, and the electronics that is transferred to suspending drain 203 is less, at equal illumination lower limb center pixel cell list, reveals lower sensitivity.Although therefore incident light presents uneven distribution on whole pel array, be that the incident light that obtains of edge pixel unit is less, but because edge pixel element sensitivity is higher, edge pixel unit still can obtain the output voltage identical with array middle position pixel cell to be changed, by array edges, to the different response curves of central pixel cell, compensate the uneven distribution of incident light on pel array, therefore, from the scope of whole pel array, its marginal position is identical with the output signal of center, thereby just can effectively eliminate the dark corner effect of array edges.In addition, in a preferred embodiment of the invention, in order to eliminate because the reason of photodiode 201, transfer transistor gate 202 and suspending drain 203 causes quantity of electric charge Q, change, the area of the photodiode 201 of each pixel cell is identical, and the area area identical and suspending drain 203 of transfer transistor gate 202 is also identical.
The formation method of a kind of image sensor pixel array based on dark angle compensation of the present invention is described below with reference to Figure 10～Figure 12.
Please refer to Figure 10, first, form multiple suspending drains 203 in Semiconductor substrate, suspending drain 203 is for being voltage by charge conversion.Preferably, the area of multiple suspending drains 203 is all identical.The formation method of this suspending drain 203, for to complete by carrying out the common process such as foreign ion injection and annealing process, is well known to those skilled in the art.Then the gate oxide 204 of growing, and on gate oxide 204, form multiple transfer transistor gate 202, preferably, the area of multiple transfer transistor gate 202 is all identical.The formation method of transfer transistor gate 202 for example on silicon substrate, grow gate oxide 204 and depositing polysilicon layer, recycling photoetching, etching technics form transfer transistor gate 202, at this, are not described further.
Please refer to Figure 11, next above gate oxide 204 and transfer transistor gate 202, form patterned photoresist layer 209.Concrete grammar is on gate oxide 204 and transfer transistor gate 202 surfaces, to apply photoresist layer photoetching board to explosure and development treatment with the layout design making as in Fig. 8.Wherein, patterned photoresist layer 209 has the unequal gap of multiple areas, the area of multiple photodiodes 201 that also will form is identical, and the area of the transfer transistor gate 202 exposing between these gaps successively decreases to center from the edge of pel array, it is preferably linear decrease.
It should be noted that these gaps are used for carrying out Implantation photodiode 201.Then, take patterned photoresist layer 209 as mask, carry out Implantation photodiode 201, final multiple photodiodes injection region 201a that forms, wherein, the area of photodiode injection region 201a and transfer transistor gate 202 overlay regions 208 successively decreases to center from pel array edge, as shown in figure 12.Certainly, the formation method of the image sensor pixel array based on dark angle compensation also comprises formation reset transistor, and source electrode is followed transistor and selected transistorized step, and its manufacturing process is well known in the art, at this, does not describe in detail.It is above-mentioned by the area of photodiode injection region 201a and transfer transistor gate 202 overlay regions 208 is successively decreased to center from the marginal position of pel array, carry out the size of corresponding change pixel cell efficiency of transmission, it is the efficiency of transmission step-down gradually of the pixel cell of cmos image sensor pel array from marginal position to center, make the efficiency of transmission of pixel cell of cmos image sensor pel array marginal position higher, electric charge can all spread out of substantially, thereby in the case of the incident light of cmos image sensor pel array marginal position cannot be collected by photodiode 201 completely, the pixel cell of array edges still can obtain the output voltage identical with the pixel cell of array middle position to be changed, effective compensation the dark corner effect at cmos image sensor pel array edge.Finally, deposit inter-level dielectric above gate oxide 204, forms metal interconnecting wires, and colour filter and lenticule, formed the image sensor pixel array based on dark angle compensation.
In sum, the present invention is based on image sensor pixel array of dark angle compensation and forming method thereof, by the area of photodiode injection region and transfer transistor gate overlay region is successively decreased to center from the marginal position of this pel array, carry out the size of corresponding change pixel cell efficiency of transmission, make the pixel cell efficiency of transmission of cmos image sensor pel array marginal position higher, thereby in the case of the incident light of cmos image sensor pel array marginal position cannot be collected by photodiode completely, the pixel cell of this array edges still can obtain the output voltage identical with the pixel cell of array middle position to be changed, effective compensation the dark corner effect at cmos image sensor pel array edge.
Above-described is only the preferred embodiments of the present invention; described embodiment is not in order to limit scope of patent protection of the present invention; therefore the equivalent variations that every utilization specification of the present invention and accompanying drawing content are done, in like manner all should be included in protection scope of the present invention.
Claims (10)
1. the image sensor pixel array based on dark angle compensation, it is characterized in that, comprise multiple pixel cells, each pixel cell comprises photodiode, transfer transistor gate and suspending drain, described photodiode produces electric charge based on incident light, and the electric charge that described transfer transistor gate produces described photodiode is transferred to its suspending drain, wherein, the injection region of described photodiode and transfer transistor gate have an overlay region, and
The area of the photodiode injection region of described multiple pixel cells and the overlay region of transfer transistor gate successively decreases to center from the edge of described pel array.
2. a kind of image sensor pixel array based on dark angle compensation according to claim 1, it is characterized in that, the area of the photodiode injection region of described multiple pixel cells and the overlay region of transfer transistor gate successively decreases to central linear from the edge of described pel array.
3. a kind of image sensor pixel array based on dark angle compensation according to claim 2, is characterized in that, the maximum area of described overlay region and the ratio range of minimum area are 1.05～2.
4. a kind of image sensor pixel array based on dark angle compensation according to claim 1, is characterized in that, the photodiode injection region area of described multiple pixel cells is identical; The transfer transistor gate area of described multiple pixel cells is identical.
5. a kind of image sensor pixel array based on dark angle compensation according to claim 1, is characterized in that, the suspending drain area of described multiple pixel cells is identical.
6. a kind of image sensor pixel array based on dark angle compensation according to claim 1, is characterized in that, described pel array comprises dielectric layer, metal interconnecting wires, colour filter and lenticule.
7. a formation method for the image sensor pixel array based on dark angle compensation, is characterized in that, comprising:
In Semiconductor substrate, form the suspending drain of multiple pixel cells;
Dielectric layer deposited, and on described dielectric layer, form multiple transfer transistor gate;
Above described dielectric layer and transfer transistor gate, form patterned photoresist layer;
Take described patterned photoresist layer as mask, carry out Implantation, to form multiple photodiodes injection region, wherein, the area of the overlay region of described multiple photodiodes injection region and transfer transistor gate successively decreases to center from the edge of described pel array.
8. the formation method of a kind of image sensor pixel array based on dark angle compensation according to claim 7, it is characterized in that, the area of the photodiode injection region of described multiple pixel cells and the overlay region of transfer transistor gate successively decreases to central linear from the edge of described pel array, and the maximum area of described overlay region and the ratio range of minimum area are 1.05～2.
9. the formation method of a kind of image sensor pixel array based on dark angle compensation according to claim 7, it is characterized in that, described patterned photoresist layer has multiple unequal gaps, and the area of the transfer transistor gate exposing between described multiple gap successively decreases to center from the edge of described pel array.
10. the formation method of a kind of image sensor pixel array based on dark angle compensation according to claim 7, is characterized in that, the transfer transistor gate area of described multiple pixel cells is identical; The suspending drain area of described multiple pixel cells is identical.
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