JP2002185131A - Soldering method and solder joint - Google Patents
Soldering method and solder jointInfo
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- JP2002185131A JP2002185131A JP2000380776A JP2000380776A JP2002185131A JP 2002185131 A JP2002185131 A JP 2002185131A JP 2000380776 A JP2000380776 A JP 2000380776A JP 2000380776 A JP2000380776 A JP 2000380776A JP 2002185131 A JP2002185131 A JP 2002185131A
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- layer
- electrode
- intermetallic compound
- solder
- alloy
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、最外層にＣｕまた
はＣｕ合金層を有する電極部を、Ｚｎを含有するはんだ
を用いてはんだ付けする、はんだ付け方法およびはんだ
接合部に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a soldering method and a solder joint for soldering an electrode having a Cu or Cu alloy layer as an outermost layer using a solder containing Zn.
【０００２】[0002]
【従来の技術】近年、はんだの鉛フリー化への要求がま
すます高まりつつあり、鉛含有はんだの代替材料のひと
つとしてＳｎ−Ｚｎ系はんだが注目されている。Ｓｎ−
Ｚｎ系はんだは、融点の低さや機械的強度などの利点を
有し、電子機器等において広く利用が期待されている。2. Description of the Related Art In recent years, there has been an increasing demand for lead-free solder, and Sn-Zn-based solder has attracted attention as one of alternative materials for lead-containing solder. Sn-
Zn-based solders have advantages such as low melting point and mechanical strength, and are expected to be widely used in electronic devices and the like.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、上述の
Ｓｎ−Ｚｎ系はんだを用いて、最外層にＣｕまたはＣｕ
合金層を有する電極部をはんだ付けする場合、次のよう
な問題があった。However, using the above-mentioned Sn-Zn solder, Cu or Cu
When the electrode part having the alloy layer is soldered, there are the following problems.
【０００４】例えば、ＣｕまたはＣｕ合金層上にＳｎ−
８Ｚｎ−３Ｂｉはんだを用いてはんだ付けを行った場
合、ＣｕまたはＣｕ合金層とはんだとの界面にＺｎ−Ｃ
ｕ金属間化合物層が成長する。Ｚｎ−Ｃｕ金属間化合物
層は、Ｓｎ−Ｃｕ金属間化合物に比べて成長が非常に早
く、Ｓｎ−Ｃｕ金属間化合物に優先して成長するもので
ある。このＺｎ−Ｃｕ金属間化合物層は、はんだ付けを
行った時点ですでに５μｍ程度の厚みになり、さらに温
度サイクル試験等の高温と低温が繰り返されるような環
境下に置かれた場合、１０μｍ程度の厚みにまで成長す
る。[0004] For example, Sn-
When soldering is performed using 8Zn-3Bi solder, the interface between the Cu or Cu alloy layer and the solder is Zn-C
A u intermetallic compound layer grows. The Zn—Cu intermetallic compound layer grows much faster than the Sn—Cu intermetallic compound, and grows preferentially over the Sn—Cu intermetallic compound. This Zn-Cu intermetallic compound layer already has a thickness of about 5 μm at the time of soldering, and about 10 μm when placed in an environment where high and low temperatures are repeated such as in a temperature cycle test. Grow to the thickness of.
【０００５】このようなＳｎ−Ｚｎ系はんだを用いては
んだ付けを行うと、Ｚｎ−Ｃｕ金属間化合物層の成長に
伴ってカーケンダルボイドが発生し、接触不良が生じて
はんだ接合部の信頼性が低下するという問題があった。[0005] When soldering is performed using such Sn-Zn-based solder, Kirkendall voids are generated with the growth of the Zn-Cu intermetallic compound layer, resulting in poor contact and reliability of the solder joint. However, there was a problem that was reduced.
【０００６】そこで本発明は、Ｚｎ含有はんだを用い
て、最外層にＣｕ層またはＣｕ合金層が形成され電極上
にはんだ付けを行う場合に、カーケンダルボイドが発生
せず、信頼性の高いはんだ接合部が得られるはんだ付け
方法およびはんだ接合部を提供することを目的とする。Accordingly, the present invention provides a highly reliable solder that does not generate Kirkendall voids when a Cu layer or a Cu alloy layer is formed on the outermost layer using a Zn-containing solder and soldering is performed on the electrode. It is an object of the present invention to provide a soldering method and a solder joint in which a joint can be obtained.
【０００７】[0007]
【課題を解決するための手段】そこで本発明は、最外層
がＣｕ層またはＣｕ合金層からなる第１の電極部と、第
２の電極部とをＺｎを含有する無鉛はんだを介して接合
するはんだ付け方法において、第１の電極部のＣｕ層ま
たはＣｕ合金層上にＳｎ−Ｃｕ系金属間化合物層を形成
する工程と、第１の電極部と前記第２の電極部とを、Ｓ
ｎ−Ｃｕ系金属間化合物層およびＺｎを含有する無鉛は
んだを介して接合する工程とを有することを特徴とする
はんだ付け方法を提供する。SUMMARY OF THE INVENTION Therefore, according to the present invention, a first electrode portion whose outermost layer is made of a Cu layer or a Cu alloy layer and a second electrode portion are joined via a lead-free solder containing Zn. In the soldering method, a step of forming a Sn—Cu-based intermetallic compound layer on a Cu layer or a Cu alloy layer of a first electrode portion, and forming the first electrode portion and the second electrode portion
bonding via an n-Cu-based intermetallic compound layer and a lead-free solder containing Zn.
【０００８】このように、第１の電極部のＣｕ層または
Ｃｕ合金層上にあらかじめＳｎ−Ｃｕ系金属間化合物層
を形成しておくことで、Ｚｎを含有する無鉛はんだを付
着させた際にＳｎ−Ｃｕ系金属間化合物層がバリアとな
り、Ｚｎ−Ｃｕ金属間化合物層の成長を抑制することが
可能になる。したがって、カーケンダルボイドが発生せ
ず、信頼性の高いはんだ接合部を得ることができるもの
である。As described above, by forming the Sn-Cu-based intermetallic compound layer on the Cu layer or Cu alloy layer of the first electrode portion in advance, when the lead-free solder containing Zn is attached, The Sn—Cu-based intermetallic compound layer serves as a barrier, which makes it possible to suppress the growth of the Zn—Cu intermetallic compound layer. Therefore, Kirkendall voids do not occur and a highly reliable solder joint can be obtained.
【０００９】また、第１の電極部と同様に、第２の電極
部の最外層もＣｕ層またはＣｕ合金層からなっていても
よく、その場合、第２の電極部のＣｕ層またはＣｕ合金
層上にもＳｎ−Ｃｕ系金属間化合物層を形成することが
望ましい。なお、上記Ｚｎを含有する無鉛はんだの例と
しては、Ｓｎ−Ｚｎ系はんだを挙げることができる。Further, similarly to the first electrode portion, the outermost layer of the second electrode portion may be formed of a Cu layer or a Cu alloy layer. In this case, the Cu layer or the Cu alloy layer of the second electrode portion may be used. It is desirable to form a Sn—Cu-based intermetallic compound layer also on the layer. In addition, as an example of the lead-free solder containing Zn, Sn-Zn-based solder can be given.
【００１０】また、Ｓｎ−Ｃｕ系金属間化合物層を形成
する工程は、第１の電極部のＣｕ層またはＣｕ合金層
上、または、第１の電極部および第２の電極部のＣｕ層
またはＣｕ合金層上に、Ｓｎ層またはＳｎ合金層を形成
する工程と、熱処理を行い、Ｃｕ層またはＣｕ合金層と
Ｓｎ層またはＳｎ合金層との界面に、Ｓｎ−Ｃｕ系金属
間化合物層を成長させる工程とを含むことが望ましい。
このように、Ｃｕ層またはＣｕ合金層上にＳｎ層または
Ｓｎ合金層を形成した後、熱処理を行うことによって、
Ｓｎ−Ｃｕ系金属間化合物層を容易に成長させることが
できるものである。The step of forming the Sn—Cu intermetallic compound layer may be performed on the Cu layer or Cu alloy layer of the first electrode section, or on the Cu layer or the Cu layer of the first electrode section and the second electrode section. Forming a Sn layer or a Sn alloy layer on the Cu alloy layer and performing heat treatment to grow a Sn—Cu-based intermetallic compound layer at an interface between the Cu layer or the Cu alloy layer and the Sn layer or the Sn alloy layer It is desirable to include the step of performing the following.
As described above, by forming the Sn layer or the Sn alloy layer on the Cu layer or the Cu alloy layer, and then performing the heat treatment,
The Sn—Cu-based intermetallic compound layer can be easily grown.
【００１１】さらに、Ｓｎ層またはＳｎ合金層は、電解
めっき、無電解めっき、溶融めっき、蒸着、スパッタの
いずれかの方法により形成することが望ましい。Further, the Sn layer or the Sn alloy layer is desirably formed by any one of electrolytic plating, electroless plating, hot-dip plating, vapor deposition, and sputtering.
【００１２】上記のはんだ付け方法によって、最外層が
Ｃｕ層またはＣｕ合金層からなる第１の電極部と、第２
の電極部とがＺｎを含有する無鉛はんだを介して接続さ
れたはんだ接合部において、第１の電極部のＣｕ層また
はＣｕ合金層上には、Ｓｎ−Ｃｕ系金属間化合物層が形
成されていることを特徴とするはんだ接合部が得られ
る。According to the above-mentioned soldering method, the first electrode portion whose outermost layer is made of a Cu layer or a Cu alloy layer,
In a solder joint where the electrode portion of the first electrode portion is connected via a lead-free solder containing Zn, an Sn—Cu-based intermetallic compound layer is formed on the Cu layer or Cu alloy layer of the first electrode portion. Thus, a solder joint characterized by having
【００１３】また、第２の電極部の最外層もＣｕ層また
はＣｕ合金層からなり、第２の電極部のＣｕ層またはＣ
ｕ合金層上には、Ｓｎ−Ｃｕ系金属間化合物層が形成さ
れていてもよい。The outermost layer of the second electrode portion is also formed of a Cu layer or a Cu alloy layer, and the Cu layer or the C
An Sn-Cu-based intermetallic compound layer may be formed on the u alloy layer.
【００１４】[0014]
【発明の実施の形態】（実施例）本発明の実施形態を図
１を用いて説明する。図１に本発明のはんだ付け方法を
用いて、基板上に形成された電極に電子部品の外部電極
を接続する方法を示す。まず、図１（ａ）に示されるよ
うに、第１の電極部であるＣｕ電極２の形成された基板
１を用意する。Ｃｕ電極２はＣｕを含むものであればよ
く、Ｃｕ合金電極や表面にＣｕの薄膜層が形成された電
極などであってもよい。(Embodiment) An embodiment of the present invention will be described with reference to FIG. FIG. 1 shows a method for connecting an external electrode of an electronic component to an electrode formed on a substrate using the soldering method of the present invention. First, as shown in FIG. 1A, a substrate 1 on which a Cu electrode 2 as a first electrode portion is formed is prepared. The Cu electrode 2 only needs to contain Cu, and may be a Cu alloy electrode or an electrode having a Cu thin film layer formed on the surface.
【００１５】次に、図１（ｂ）に示されるように、Ｃｕ
電極２上に電解めっき法を用いてＳｎ層３を１０μｍの
厚みに形成した。Ｓｎ層３はＳｎ−Ｐｂ、Ｓｎ−Ａｇ、
Ｓｎ−Ｂｉ、Ｓｎ−Ｃｕ、Ｓｎ−ＰなどのＳｎ合金層で
あってもよい。また、Ｓｎ層３は電解めっきに限られ
ず、無電解めっき、溶融めっき、蒸着、スパッタなど種
々の薄膜形成法を用いて形成することができる。Next, as shown in FIG.
An Sn layer 3 was formed on the electrode 2 to a thickness of 10 μm by using an electrolytic plating method. The Sn layer 3 is composed of Sn-Pb, Sn-Ag,
It may be a Sn alloy layer such as Sn-Bi, Sn-Cu, or Sn-P. In addition, the Sn layer 3 is not limited to electrolytic plating, and can be formed by various thin film forming methods such as electroless plating, hot-dip plating, vapor deposition, and sputtering.
【００１６】続いて、１５０℃で５００時間の熱処理を
行い、図１（ｃ）に示されるようにＣｕ電極２とＳｎ層
３の界面にＣｕ6Ｓｎ5、Ｃｕ3Ｓｎ等のＳｎ−Ｃｕ金属
間化合物層４を成長させた。Ｓｎ−Ｃｕ金属間化合物層
４の厚みは約４μｍとなった。なお、熱処理は３００℃
以下の温度で行うことが望ましいと考えられる。Subsequently, a heat treatment is performed at 150 ° C. for 500 hours to form an Sn—Cu metal such as Cu 6 Sn 5 or Cu 3 Sn on the interface between the Cu electrode 2 and the Sn layer 3 as shown in FIG. An inter-compound layer 4 was grown. The thickness of the Sn—Cu intermetallic compound layer 4 was about 4 μm. The heat treatment is 300 ° C.
It is considered desirable to perform at the following temperature.
【００１７】さらに、図１（ｄ）に示されるように、Ｓ
ｎ層３上にＳｎ−Ｚｎ−Ｂｉはんだ５を付着させ、その
上から第２の電極部である電子部品８の外部電極７を接
続させた。この際、Ｓｎ−Ｃｕ金属間化合物層４とＳｎ
−Ｚｎ−Ｂｉはんだ５との界面にはＣｕ5Ｚｎ8等のＺｎ
−Ｃｕ金属間化合物層６が形成され、その厚みは５μｍ
であった。また、Ｓｎ層３はＳｎ−Ｚｎ−Ｂｉはんだ５
に溶融したものと考えられる。Further, as shown in FIG.
A Sn—Zn—Bi solder 5 was attached on the n-layer 3, and an external electrode 7 of an electronic component 8 as a second electrode was connected from above. At this time, the Sn—Cu intermetallic compound layer 4 and the Sn—Cu
-Zn-Bi Zn such Cu 5 Zn 8 at the interface between the solder 5
-Cu intermetallic compound layer 6 is formed and its thickness is 5 μm
Met. The Sn layer 3 is made of Sn—Zn—Bi solder 5
It is considered to have melted.
【００１８】（比較例）本比較例では、熱処理によりＣ
ｕ電極２とＳｎ層３の界面にＳｎ−Ｃｕ金属間化合物層
４を成長させる工程を省略した以外は、上記実施例と同
様の工程を行った。すなわち、本比較例におけるはんだ
接合部は、Ｃｕ電極２とＳｎ層３の界面にＳｎ−Ｃｕ金
属間化合物層４が形成されていない。本比較例では、Ｓ
ｎ層３とＳｎ−Ｚｎ−Ｂｉはんだ５との界面に形成され
たＺｎ−Ｃｕ金属間化合物層６は厚みが４μｍとなり、
実施例におけるＺｎ−Ｃｕ金属間化合物層６の厚みと大
きな違いはない。(Comparative Example) In this comparative example, C
The same steps as in the above example were performed, except that the step of growing the Sn—Cu intermetallic compound layer 4 at the interface between the u electrode 2 and the Sn layer 3 was omitted. That is, in the solder joint in this comparative example, the Sn—Cu intermetallic compound layer 4 is not formed at the interface between the Cu electrode 2 and the Sn layer 3. In this comparative example, S
The Zn-Cu intermetallic compound layer 6 formed at the interface between the n-layer 3 and the Sn-Zn-Bi solder 5 has a thickness of 4 m,
There is no significant difference from the thickness of the Zn-Cu intermetallic compound layer 6 in the example.
【００１９】ここで、上記実施例および比較例で形成さ
れたそれぞれのはんだ接合部に１２５℃で５００時間の
熱処理を施した。熱処理前後のＺｎ−Ｃｕ金属間化合物
層６の厚みの変化を表１に示す。Here, each of the solder joints formed in the above Examples and Comparative Examples was subjected to a heat treatment at 125 ° C. for 500 hours. Table 1 shows changes in the thickness of the Zn-Cu intermetallic compound layer 6 before and after the heat treatment.
【００２０】[0020]
【表１】 [Table 1]
【００２１】表から明らかなように、比較例では熱処理
によってＺｎ−Ｃｕ金属間化合物層の厚みが４μｍから
１３μｍに成長したのに対し、実施例ではＺｎ−Ｃｕ金
属間化合物層の厚みは５μｍのままで変化せず、さらな
る成長はみられなかった。詳しいメカニズムは明らかで
はないが、実施例ではあらかじめ形成したＳｎ−Ｃｕ金
属間化合物層が要因となってＣｕの拡散を抑制し、Ｚｎ
−Ｃｕ金属間化合物層のさらなる成長を防いだものと考
えられる。また、Ｓｎ−Ｃｕ金属間化合物層とＺｎ−Ｃ
ｕ金属間化合物層との界面には、わずかではあるがＳｎ
を主成分とする層の生成がみられたが、該Ｓｎを主成分
とする層もＣｕの拡散の抑制に何らかの役割を果たして
いるものと考えられる。As is clear from the table, in the comparative example, the thickness of the Zn—Cu intermetallic compound layer was increased from 4 μm to 13 μm by the heat treatment, whereas in the example, the thickness of the Zn—Cu intermetallic compound layer was 5 μm. There was no change and no further growth was seen. Although the detailed mechanism is not clear, in the example, the diffusion of Cu was suppressed due to the Sn-Cu intermetallic compound layer formed in advance, and Zn
It is considered that further growth of the Cu intermetallic compound layer was prevented. Further, the Sn—Cu intermetallic compound layer and the Zn—C
At the interface with the u-intermetallic compound layer, Sn
Although a layer mainly composed of Sn was generated, it is considered that the layer mainly composed of Sn also plays a role in suppressing the diffusion of Cu.
【００２２】また、比較例ではカーケンダルボイドの発
生が認められたが、実施例では認められず、信頼性の高
いはんだ接合部を得ることができた。Although the occurrence of Kirkendall voids was observed in the comparative example, it was not observed in the example, and a highly reliable solder joint could be obtained.
【００２３】なお、上記実施例ではＳｎ−Ｚｎ系はんだ
を用いてはんだ接続を行う場合について説明したが、本
発明はＺｎ−Ｃｕ金属間化合物層の成長を防ぐことを目
的とするものであるから、Ｓｎ−Ｚｎ系はんだに限らず
Ｚｎを含有するはんだを用いる場合には同様の効果が得
られるものと考えられる。In the above embodiment, the case where the solder connection is performed by using the Sn-Zn-based solder has been described. However, the present invention aims at preventing the growth of the Zn-Cu intermetallic compound layer. It is considered that a similar effect can be obtained when a solder containing Zn is used instead of the Sn—Zn-based solder.
【００２４】また、本実施例では基板上に形成されたＣ
ｕ電極に電子部品の外部電極をはんだ接合する場合につ
いて説明したが、電極部の形状はこれに限定されるもの
ではなく、基板上の電極に電子部品のリード端子やバン
プ電極等をはんだ付けする場合や、電子部品の電極同士
をはんだ付けする場合にも同様に本発明を用いることが
できる。In this embodiment, the C formed on the substrate is
Although the case where the external electrode of the electronic component is soldered to the u electrode has been described, the shape of the electrode portion is not limited to this, and the lead terminal or the bump electrode of the electronic component is soldered to the electrode on the substrate. The present invention can be similarly applied to the case and the case where the electrodes of the electronic component are soldered.
【００２５】さらに本発明は、本実施例の他、実装部品
側の電極、たとえば電子部品の外部電極の最外層がＣｕ
電極層からなる場合や、被実装部品側と実装部品側の電
極がいずれも最外層にＣｕ電極層を有する場合について
も本発明を適用することができる。Further, according to the present invention, in addition to the present embodiment, the outermost layer of the electrode on the mounted component side, for example, the external electrode of the electronic component is made of Cu
The present invention can also be applied to a case where the electrode is formed of an electrode layer, or a case where both the mounted component side and the mounted component side have Cu electrode layers as outermost layers.
【００２６】[0026]
【発明の効果】以上のように本発明によれば、最外層に
Ｃｕ層またはＣｕ合金層を有する電極に、Ｚｎを含有す
るはんだを用いてはんだ接続を行った場合に、Ｃｕ層ま
たはＣｕ合金層上にあらかじめＳｎ−Ｃｕ系金属間化合
物層を形成したため、Ｃｕのはんだ中への拡散が抑制さ
れ、Ｚｎ−Ｃｕ金属間化合物層の成長を防ぐことができ
た。これにより、カーケンダルボイドが抑制され、信頼
性の高いはんだ接合部を得ることができた。As described above, according to the present invention, when an electrode having a Cu layer or a Cu alloy layer as an outermost layer is connected to a Cu layer or a Cu alloy when a solder containing Zn is used. Since the Sn—Cu-based intermetallic compound layer was formed on the layer in advance, the diffusion of Cu into the solder was suppressed, and the growth of the Zn—Cu intermetallic compound layer could be prevented. Thereby, Kirkendall voids were suppressed, and a highly reliable solder joint was obtained.
【図１】本発明の実施例を示す工程断面図である。FIG. 1 is a process sectional view showing an embodiment of the present invention.
１ 基板 ２ Ｃｕ電極（第１の電極部） ３ Ｓｎ層 ４ Ｓｎ−Ｃｕ金属間化合物層 ５ Ｓｎ−Ｚｎ−Ｂｉはんだ ６ Ｚｎ−Ｃｕ金属間化合物層 ７ 外部電極（第２の電極部） ８ 電子部品 Reference Signs List 1 substrate 2 Cu electrode (first electrode part) 3 Sn layer 4 Sn-Cu intermetallic compound layer 5 Sn-Zn-Bi solder 6 Zn-Cu intermetallic compound layer 7 external electrode (second electrode part) 8 electron parts
Claims (9)
第１の電極部と、第２の電極部とをＺｎを含有する無鉛
はんだを介して接合するはんだ付け方法において、 前記第１の電極部のＣｕ層またはＣｕ合金層上に、Ｓｎ
−Ｃｕ系金属間化合物層を形成する工程と、 前記第１の電極部と前記第２の電極部とを、前記Ｓｎ−
Ｃｕ系金属間化合物層および前記Ｚｎを含有する無鉛は
んだを介して接合する工程と、を有することを特徴とす
るはんだ付け方法。1. A soldering method for joining a first electrode portion having a Cu layer or a Cu alloy layer as an outermost layer and a second electrode portion via a lead-free solder containing Zn. Sn on the Cu layer or Cu alloy layer of the electrode part
A step of forming a Cu-based intermetallic compound layer; and forming the first electrode portion and the second electrode portion
Joining via a Cu-based intermetallic compound layer and the Zn-containing lead-free solder.
第１の電極部と、最外層がＣｕ層またはＣｕ合金層から
なる第２の電極部とをＺｎを含有する無鉛はんだを介し
て接合するはんだ付け方法において、 前記第１の電極部および前記第２の電極部のＣｕ層また
はＣｕ合金層上にＳｎ−Ｃｕ系金属間化合物層を形成す
る工程と、 前記第１の電極部と前記第２の電極部とを、前記Ｓｎ−
Ｃｕ系金属間化合物層および前記Ｚｎを含有する無鉛は
んだを介して接合する工程と、を有することを特徴とす
るはんだ付け方法。A first electrode portion having an outermost layer formed of a Cu layer or a Cu alloy layer and a second electrode portion having an outermost layer formed of a Cu layer or a Cu alloy layer via a lead-free solder containing Zn; In a soldering method for joining, a step of forming an Sn—Cu-based intermetallic compound layer on a Cu layer or a Cu alloy layer of the first electrode portion and the second electrode portion; The second electrode portion is connected to the Sn-
Joining via a Cu-based intermetallic compound layer and the Zn-containing lead-free solder.
Ｚｎ系はんだであることを特徴とする、請求項１または
請求項２のいずれかに記載のはんだ付け方法。3. A lead-free solder containing Zn, wherein Sn-
The soldering method according to claim 1, wherein the soldering method is a Zn-based solder.
る工程は、 前記第１の電極部のＣｕ層またはＣｕ合金層上、また
は、前記第１の電極部および前記第２の電極部のＣｕ層
またはＣｕ合金層上に、Ｓｎ層またはＳｎ合金層を形成
する工程と、 熱処理を行い、Ｃｕ層またはＣｕ合金層とＳｎ層または
Ｓｎ合金層との界面に、Ｓｎ−Ｃｕ系金属間化合物層を
成長させる工程とを含むことを特徴とする、請求項１な
いし請求項３のいずれかに記載のはんだ付け方法。4. The step of forming the Sn—Cu-based intermetallic compound layer includes: on the Cu layer or Cu alloy layer of the first electrode section, or on the first electrode section and the second electrode section. Forming a Sn layer or a Sn alloy layer on the Cu layer or the Cu alloy layer, and performing a heat treatment to form an Sn-Cu-based metal at the interface between the Cu layer or the Cu alloy layer and the Sn layer or the Sn alloy layer. 4. The method according to claim 1, further comprising the step of growing a compound layer.
程は、電解めっき、無電解めっき、溶融めっき、蒸着、
スパッタのいずれかの方法によりＳｎ層またはＳｎ合金
層を形成することを特徴とする、請求項４に記載のはん
だ付け方法。5. The step of forming the Sn layer or the Sn alloy layer includes electrolytic plating, electroless plating, hot-dip plating, vapor deposition,
The soldering method according to claim 4, wherein the Sn layer or the Sn alloy layer is formed by any one of sputtering methods.
第１の電極部と、第２の電極部とがＺｎを含有する無鉛
はんだを介して接続されたはんだ接合部において、 前記第１の電極部のＣｕ層またはＣｕ合金層上には、Ｓ
ｎ−Ｃｕ系金属間化合物層が形成されていることを特徴
とする、はんだ接合部。6. A solder joint in which a first electrode part whose outermost layer is made of a Cu layer or a Cu alloy layer and a second electrode part are connected via a lead-free solder containing Zn. S on the Cu layer or Cu alloy layer of the electrode part of
A solder joint, wherein an n-Cu-based intermetallic compound layer is formed.
はＣｕ合金層からなり、 前記第２の電極部のＣｕ層またはＣｕ合金層上には、Ｓ
ｎ−Ｃｕ系金属間化合物層が形成されていることを特徴
とする、請求項６に記載のはんだ接合部。7. The second electrode section, wherein the outermost layer is made of a Cu layer or a Cu alloy layer, and the Cu layer or Cu alloy layer of the second electrode section has
The solder joint according to claim 6, wherein an n-Cu-based intermetallic compound layer is formed.
Ｚｎ系はんだであることを特徴とする、請求項６または
請求項７のいずれかに記載のはんだ接合部。8. A lead-free solder containing Zn, wherein Sn-
The solder joint according to claim 6, wherein the solder joint is a Zn-based solder.
のはんだ接合部を有する電子機器。9. An electronic device having a solder joint according to claim 6.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000380776A JP2002185131A (en) | 2000-12-14 | 2000-12-14 | Soldering method and solder joint |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000380776A JP2002185131A (en) | 2000-12-14 | 2000-12-14 | Soldering method and solder joint |
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| Publication Number | Publication Date |
|---|---|
| JP2002185131A true JP2002185131A (en) | 2002-06-28 |
Family
ID=18848901
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
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| Country | Link |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2383552A (en) * | 2001-12-28 | 2003-07-02 | Matsushita Electric Ind Co Ltd | Use of a barrier layer on a Cu substrate when using a Sn-Bi alloy as solder |
| GB2383551A (en) * | 2001-12-28 | 2003-07-02 | Matsushita Electric Ind Co Ltd | Use of a barrier layer on a Cu substrate when using a Sn-Zn alloy as solder |
| WO2003092066A1 (en) * | 2002-04-23 | 2003-11-06 | Agency For Science, Technology And Research | A solder interconnection having a layered barrier structure and method for forming same |
| JP2006086386A (en) * | 2004-09-17 | 2006-03-30 | Espec Corp | Material applicable to solder joint and its manufacturing method |
-
2000
- 2000-12-14 JP JP2000380776A patent/JP2002185131A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2383552A (en) * | 2001-12-28 | 2003-07-02 | Matsushita Electric Ind Co Ltd | Use of a barrier layer on a Cu substrate when using a Sn-Bi alloy as solder |
| GB2383551A (en) * | 2001-12-28 | 2003-07-02 | Matsushita Electric Ind Co Ltd | Use of a barrier layer on a Cu substrate when using a Sn-Zn alloy as solder |
| US6814276B2 (en) | 2001-12-28 | 2004-11-09 | Matsushita Electric Industrial Co., Ltd. | Process for soldering and connecting structure |
| GB2383551B (en) * | 2001-12-28 | 2005-03-02 | Matsushita Electric Ind Co Ltd | Process for soldering and connecting structure |
| GB2383552B (en) * | 2001-12-28 | 2005-03-02 | Matsushita Electric Ind Co Ltd | Process for soldering and connecting structure |
| US6871775B2 (en) | 2001-12-28 | 2005-03-29 | Matsushita Electric Industrial Co., Ltd. | Process for soldering and connecting structure |
| WO2003092066A1 (en) * | 2002-04-23 | 2003-11-06 | Agency For Science, Technology And Research | A solder interconnection having a layered barrier structure and method for forming same |
| JP2006086386A (en) * | 2004-09-17 | 2006-03-30 | Espec Corp | Material applicable to solder joint and its manufacturing method |
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