JP2002182380A - Radiation sensitive resin composition for forming insulation film of organic el display element, insulation film formed from the same and organic el display element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a radiation sensitive resin composition for forming an insulation film of an organic EL(electroluminescent) element capable of forming a through hole or a U-shaped recess, excellent in flattening performance and having high transparency and high resistance to a resist removing solution and to provide an insulation film of an organic EL element formed from the composition and an organic EL display element with the insulation film. SOLUTION: The composition contains (a) an epoxy-containing alkali-soluble resin and (b) a 1,2-quinonediazido compound. The insulation film is formed from the composition. The organic EL display element has the insulation film.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a radiation-sensitive resin composition for an organic EL insulating film, an insulating film of an organic EL display element, and an organic EL display element. More specifically, a positive-type radiation-sensitive resin composition suitable for forming an insulating film using radiation such as ultraviolet rays, far ultraviolet rays, X-rays, electron beams, molecular beams, γ-rays, synchrotron radiation, and proton beams; The present invention relates to an insulating film of an organic EL display element and an organic EL display element having the insulating film.

[0002]

2. Description of the Related Art An organic EL device emits light by itself and has no dependence on viewing angle, and since it is a solid device, it has excellent impact resistance.
There are various advantages over liquid crystal display elements, such as low voltage driving, low power consumption, and high operation stability in a low temperature range. Since the organic EL element has these advantages, it is particularly expected to be applied to mobile applications such as mobile terminals and vehicles, and has been actively studied. The production of such an organic EL device is generally performed by the following method. A transparent electrode (hole injection electrode) such as tin-doped indium oxide (ITO) and a pattern of a hole transport layer are formed on the substrate. Next, in the case of the passive type organic EL element, after forming the pattern of the insulating film and the pattern of the cathode partition, the organic EL layer, the electron transport layer and the cathode are patterned by vapor deposition. In the active organic EL device, an ITO pattern, a pattern of an insulating film also serving as a partition of the organic EL layer, and a hole transport layer pattern are formed, and then the pattern of the organic EL layer is formed by a masking method. An electron transport layer and a cathode (electron injection electrode) are formed. Here, as the organic EL layer, Alq ₃ , BeB
Generally, a material such as q _{3 in which} a base material is doped with quinacridone or coumarin is used, and as a cathode material, a material mainly composed of a low work function metal such as Mg or Ag is used.

However, in recent years, an organic EL display element having a structure with a high aperture ratio has been studied for higher definition. The production of such an organic EL element is performed, for example, by the following method. A driving terminal is formed over a substrate such as glass, and an insulating film having a flattening property is formed thereon. I on it
A pattern of a transparent electrode (hole injection electrode) such as TO is formed. The pattern formation at this time is usually performed by a wet etching method. Further, a hole transport layer, an organic EL layer, an electron transport layer, and an electron injection electrode are sequentially formed thereon. The insulating film used in the organic EL display element having such a structure includes one for conducting between an ITO electrode (hole injection electrode) formed above the insulating film and a driving terminal below the insulating film. It is necessary to form a through hole or a U-shaped depression of about 15 μm. In addition, excellent flattening performance, high transparency and high resistance to a resist stripping solution are required. However, conventionally, an insulating film having a sufficient resolution capable of forming a through hole or a U-shaped depression as described above, having excellent flattening performance, and having high transparency and high resistance to a resist stripping solution is formed. No material was proposed.

[0004]

SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and an object of the present invention is to form a through hole or a U-shaped dent and have excellent flattening performance. Another object of the present invention is to provide a radiation-sensitive resin composition for forming an insulating film having high transparency and high resistance to a resist stripper. Another object of the present invention is to provide an insulating film formed from the above composition. Still another object of the present invention is to provide an organic EL display device having an insulating film formed from the composition.

[0005]

According to the present invention, the object is characterized in that it comprises (a) an alkali-soluble resin containing an epoxy group, and (b) a 1,2-quinonediazide compound. This is achieved by a radiation-sensitive resin composition for forming an insulating film of an organic EL display element. Also,
Another object of the present invention is achieved by an insulating film formed from the radiation-sensitive resin composition. Still another object of the present invention is achieved by an organic EL display device having an insulating film formed from the radiation-sensitive resin composition. Hereinafter, the present invention will be described in detail.

The radiation-sensitive resin composition for forming an insulating film of an organic EL display element according to the present invention comprises (a) an alkali-soluble resin containing an epoxy group, and (b) a 1,2-quinonediazide compound. Hereinafter, each component of the composition of the present invention will be described.

(A) Alkali-soluble containing an epoxy group
The composition of RESIN present invention, (a) has an alkali-soluble resin having an epoxy group, which has adequate solubility in an alkaline developer, by heating without a combination of special curing agent Can be easily cured. The (a) epoxy group-containing alkali-soluble resin used in the present invention is not particularly limited as long as it has an epoxy group and is alkali-soluble. For example, (a1) an epoxy group-containing unsaturated monomer, (A2) at least one monomer selected from unsaturated carboxylic acids, unsaturated carboxylic anhydrides, and unsaturated monomers having a phenolic hydroxyl group, and (a3) an olefin other than (a1) and (a2) It can be a copolymer obtained by copolymerizing a system unsaturated compound.

Examples of the (a1) unsaturated monomer containing an epoxy group include glycidyl (meth) acrylate, -β-methylglycidyl (meth) acrylate, -β-ethylglycidyl (meth) acrylate, Β-Propylglycidyl (meth) acrylate, glycidyl α-ethyl acrylate, β-methylglycidyl α-ethylacrylate, 3-methyl-3,4-epoxybutyl (meth) acrylate, (meth) acrylic Epoxy groups such as 3-ethyl-3,4-epoxybutyl acid, 4-methyl-4,5-epoxypentyl (meth) acrylate, and 5-methyl-5,6-epoxyhexyl (meth) acrylate (Meth) acrylates having:

O-vinylbenzyl glycidyl ether, m-
Having an epoxy group such as vinylbenzyl glycidyl ether, p-vinylbenzyl glycidyl ether, α-methyl-o-vinylbenzyl glycidyl ether, α-methyl-m-vinylbenzyl glycidyl ether, α-methyl-p-vinylbenzyl glycidyl ether; Styrene derivatives;

2,3-diglycidyloxymethylstyrene, 2,4-diglycidyloxymethylstyrene,
Styrene derivatives having two epoxy groups such as 5-diglycidyloxymethylstyrene and 2,6-diglycidyloxymethylstyrene; 2,3,4-triglycidyloxymethylstyrene, 2,3,5-triglycidyloxy Styrene derivatives having three epoxy groups such as methylstyrene, 2,3,6-triglycidyloxymethylstyrene, 3,4,5-triglycidyloxymethylstyrene, and 2,4,6-triglycidyloxymethylstyrene No.

Of these, glycidyl (meth) acrylate, -β-methyl glycidyl (meth) acrylate, o-vinylbenzyl glycidyl ether, m-vinylbenzyl glycidyl ether, and p-vinylbenzyl glycidyl ether are used to obtain the insulation. It is preferably used from the viewpoint of film transparency, developability and solvent resistance. These can be used alone or in combination of two or more.

(A1) The proportion of copolymerization of an unsaturated monomer containing an epoxy group is usually from 20 to 90% by weight, preferably from 30 to 80% by weight, and particularly preferably from 4 to 80% by weight.
0 to 70% by weight. If the value is less than 20%, the resistance to the stripping solution used in wet etching of the ITO electrode may be insufficient, 90
If the amount is more than 10% by weight, the solubility in an alkaline developer becomes too low, and a problem may occur in developability.

The above-mentioned (a2) at least one monomer selected from unsaturated carboxylic acids, unsaturated carboxylic anhydrides and unsaturated monomers having a phenolic hydroxyl group includes, for example, o-hydroxystyrene, m- Hydroxystyrenes such as hydroxystyrene and p-hydroxystyrene and their alkyl, alkoxy, halogen, haloalkyl, nitro, cyano, amide, ester, carboxy substituents; vinylhydroquinone;
Polyhydroxyvinylphenols such as vinylpyrogallol, 6-vinylpyrogallol and 1-vinylphloroglysinol; o-vinylbenzoic acid, m-vinylbenzoic acid,
And p-vinylbenzoic acids and their alkyl, alkoxy, halogen, nitro, cyano, amide,
Vinylbenzoic acids such as ester-substituted products;

(Meth) acrylic acids such as methacrylic acid and acrylic acid, and their α-haloalkyl, alkoxy, halogen, nitro and cyano substituents; maleic acid, maleic anhydride, fumaric acid, citraconic acid, mesaconic acid , Itaconic acid and 1,4-cyclohexene dicarboxylic acid and other divalent unsaturated carboxylic acids and their methyl, ethyl, propyl, i-propyl, n-butyl, sec-butyl, ter-butyl, phenyl, o- And di-unsaturated carboxylic acids such as m-, p-toluyl half ester and hafamide.

Of these, (meth) acrylic acid, maleic anhydride and fumaric acid are preferably used from the viewpoint of developability. These can be used alone or in combination of two or more.

(A2) The copolymerization ratio of the monomer is usually 3
To 45% by weight, preferably 6 to 30% by weight, and more preferably 10 to 25% by weight. If this value is less than 3% by weight, the developability with an alkali developer may be too low, while this value may be less than 45%.
If the amount exceeds the above range, the resulting radiation-sensitive resin composition becomes soluble in the alkali developing solution not only in the irradiated area but also in the non-irradiated area, and the pattern may not be formed.

Examples of the above (a3) olefinically unsaturated compounds other than the above (a1) and (a2) include methacrylic acid such as methyl methacrylate, ethyl methacrylate, n-butyl methacrylate, sec-butyl methacrylate and t-butyl methacrylate. Alkyl esters; alkyl acrylates such as methyl acrylate and isopropyl acrylate; cyclohexyl methacrylate, 2-methylcyclohexyl methacrylate, tricyclo [5.2.1.0 ^2,6 ] decane-8-yl methacrylate (a common name in the art) As "dicyclopentanyl methacrylate"),
Methacrylic acid cyclic alkyl esters such as dicyclopentanyloxyethyl methacrylate and isobornyl methacrylate; cyclohexyl acrylate, 2-methylcyclohexyl acrylate, tricyclo [5.2.
1.0 ^2,6 ] decane-8-yl acrylate (commonly referred to in the art as "dicyclopentanyl acrylate"), acrylic acid such as dicyclopentanyloxyethyl acrylate, isobornyl acrylate Cyclic alkyl esters; aryl methacrylates such as phenyl methacrylate and benzyl methacrylate; aryl acrylates such as phenyl acrylate and benzyl acrylate; dicarboxylic acid diesters such as diethyl maleate, diethyl fumarate and diethyl itaconate; 2-hydroxyethyl methacrylate And hydroxyalkyl esters such as 2-hydroxypropyl methacrylate; and styrene, α-
Methylstyrene, m-methylstyrene, p-methylstyrene, vinyltoluene, p-methoxystyrene, acrylonitrile, methacrylonitrile, vinyl chloride, vinylidene chloride, acrylamide, methacrylamide, vinyl acetate, 1,3-butadiene, isoprene, 2 , 3-Dimethyl-1,3-butadiene, phenylmaleimide, ethylene glycol diacrylate, diethylene glycol diacrylate, triethylene glycol diacrylate, neopentyl glycol diacrylate, glycerol diacrylate, ethylene glycol dimethacrylate, diethylene glycol dimethacrylate, triethylene Ethylene glycol dimethacrylate, neopentyl glycol dimethacrylate, glycerol dimethacrylate and the like. That. Among them, styrene, butadiene, n-propyl acrylate, tricyclo [5.
2.1.0 ^2,6 ] decane-8-yl acrylate, methyl methacrylate, 2-hydroxyethyl methacrylate, n-butyl methacrylate and the like are preferably used in view of developability and transparency of the obtained insulating film. These may be used alone or in combination.

(A3) The copolymerization ratio of the monomer is usually 2
８０80% by weight, preferably 5-60% by weight, more preferably 10-40% by weight.

(A1), (a2) and (a)
Specific examples of the solvent used when copolymerizing 3) include alcohols such as methanol and ethanol; ethers such as tetrahydrofuran; glycol ethers such as ethylene glycol monomethyl ether and ethylene glycol monoethyl ether; Ethylene glycol alkyl ether acetates such as methyl cellosolve acetate and ethyl cellosolve acetate;
Diethylene glycol alkyl ethers such as diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether and diethylene glycol ethyl methyl ether; propylene glycol monoether such as propylene glycol methyl ether, propylene glycol ethyl ether, propylene glycol propyl ether and propylene glycol butyl ether Alkyl ethers; propylene glycol alkyl ether acetates such as propylene glycol methyl ether acetate, propylene glycol ethyl ether acetate, propylene glycol propyl ether acetate propylene glycol butyl ether acetate; Propylene glycol alkyl ether acetates such as propylene glycol methyl ether propionate, propylene glycol ethyl ether propionate, propylene glycol propyl ether propionate and propylene glycol butyl ether propionate; aromatics such as toluene and xylene Hydrocarbons; ketones such as methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, 2-heptanone, 4-hydroxy-4-methyl-2-pentanone;

And methyl acetate, ethyl acetate, propyl acetate, butyl acetate, ethyl 2-hydroxypropionate, methyl 2-hydroxy-2-methylpropionate,
Ethyl 2-hydroxy-2-methylpropionate, methyl hydroxyacetate, ethyl hydroxyacetate, butyl hydroxyacetate, methyl lactate, ethyl lactate, propyl lactate,
Butyl lactate, methyl 3-hydroxypropionate, 3-
Ethyl hydroxypropionate, protyl 3-hydroxypropionate, butyl 3-hydroxypropionate,
Methyl 2-hydroxy-3-methylbutanoate, methyl methoxyacetate, ethyl methoxyacetate, propyl methoxyacetate, butyl methoxyacetate, methyl ethoxyacetate, ethyl ethoxyacetate, propyl ethoxyacetate, butyl ethoxyacetate, methyl propoxyacetate, ethyl propoxyacetate,
Propyl propyl acetate, butyl propoxy acetate, methyl butoxy acetate, ethyl butoxy acetate, propyl butoxy acetate, butyl butoxy acetate, methyl 2-methoxypropionate, ethyl 2-methoxypropionate, propyl 2-methoxypropionate, 2-methoxypropionic acid Butyl, methyl 2-ethoxypropionate, ethyl 2-ethoxypropionate, propyl 2-ethoxypropionate, butyl 2-ethoxypropionate, methyl 2-butoxypropionate, ethyl 2-butoxypropionate, propyl 2-butoxypropionate Butyl 2-butoxypropionate, methyl 3-methoxypropionate, ethyl 3-methoxypropionate, propyl 3-methoxypropionate, butyl 3-methoxypropionate, 3-ethoxypropionate Methyl phosphate, ethyl 3-ethoxypropionate, propyl 3-ethoxypropionate, butyl 3-ethoxypropionate, methyl 3-propoxypropionate, ethyl 3-propoxypropionate, propyl 3-propoxypropionate, 3-propoxypropion Esters such as butyl acid, methyl 3-butoxypropionate, ethyl 3-butoxypropionate, propyl 3-butoxypropionate, and butyl 3-butoxypropionate.

As the polymerization initiator used for copolymerizing (a1), (a2) and (a3), those generally known as radical polymerization initiators can be used. '-Azobisisobutyronitrile,
2,2'-azobis- (2,4-dimethylvaleronitrile), 2,2'-azobis- (4-methoxy-2,4-
Azo compounds such as dimethylvaleronitrile); organic peroxides such as benzoyl peroxide, lauroyl peroxide, t-butylperoxypivalate, 1,1'-bis- (t-butylperoxy) cyclohexane; and hydrogen peroxide. . When a peroxide is used as the radical polymerization initiator, the peroxide may be used together with a reducing agent to form a redox initiator.

When (a1), (a2) and (a3) are copolymerized, a molecular weight modifier can be used to adjust the molecular weight. Specific examples thereof include halogenated hydrocarbons such as chloroform and carbon tetrabromide; mercaptans such as n-hexylmercaptan, n-octylmercaptan, n-dodecylmercaptan, tert-dodecylmercaptan and thioglycolic acid; dimethylxanthogen Xanthogens such as sulfide and diisopropylxanthogen disulfide; terpinolene, α-
Methylstyrene dimer and the like can be mentioned.

(A) The weight average molecular weight (Mw) in terms of polystyrene of the alkali-soluble resin having an epoxy group is preferably from 2,000 to 100,000, more preferably from 3,000 to 50,000, particularly preferably from 5,000. 000 ~
30,000. Within this range, a radiation-sensitive resin composition having an excellent balance between pattern shape, resolution, developability and heat resistance, and developability and sensitivity can be provided. When the weight average molecular weight exceeds 100,000, it may be difficult to uniformly apply the composition to a wafer, and the developability and sensitivity may be further reduced.
On the other hand, when the weight average molecular weight is less than 2,000, not only the exposed part but also the unexposed part may show solubility in an alkali developing solution, and a pattern may not be formed.

Before the copolymerization, a protective group is introduced into the carboxyl group or the phenolic hydroxyl group of the monomer (a2), and deprotection is performed after the copolymerization to impart alkali solubility. The component (a) may be synthesized.
Although the insulating film obtained from the composition of the present invention has sufficient transparency, for example, the transparency in visible light can be improved by subjecting the component (a) synthesized as described above to a hydrogenation treatment or the like. Further improvements can be made. Further, the softening point can be changed by this processing.

(B) 1,2-quinonediazide compound As the (b) 1,2-quinonediazide compound used in the present invention, a 1,2-quinonediazide compound having a structure capable of absorbing radiation to generate a carboxylic acid is preferable. For example, 1,2-benzoquinonediazidesulfonic acid ester, 1,2-naphthoquinonediazidosulfonic acid ester, 1,2-benzoquinonediazidosulfonic acid amide, 1,2-naphthoquinonediazidosulfonic acid amide and the like can be mentioned. .

Specific examples thereof include 2,3,4-trihydroxybenzophenone-1,2-naphthoquinone azide-4-sulfonic acid ester and 2,3,4-trihydroxybenzophenone-1,2-naphthoquinonediazide- 5-sulfonic acid ester, 2,4,6-trihydroxybenzophenone-1,2-naphthoquinonediazide-4
1,2-naphthoquinonediazidesulfonic acid esters of trihydroxybenzophenone, such as -sulfonic acid ester, 2,4,6-trihydroxybenzophenone-1,2-naphthoquinonediazide-5-sulfonic acid ester;
2,2 ', 4,4'-tetrahydroxybenzophenone-1,2-naphthoquinonediazide-4-sulfonic acid ester, 2,2', 4,4'-tetrahydroxybenzophenone-1,2-naphthoquinonediazide-5 Sulfonate, 2,3,4,3′-tetrahydroxybenzophenone-1,2-naphthoquinonediazide-4-sulfonic acid ester, 2,3,4,3′-tetrahydroxybenzophenone-1,2-naphthoquinonediazide 5-
Sulfonate, 2,3,4,4'-tetrahydroxybenzophenone-1,2-naphthoquinonediazide-
4-sulfonic acid ester, 2,3,4,4'-tetrahydroxybenzophenone-1,2-naphthoquinonediazide-5-sulfonic acid ester, 2,3,4,2'-tetrahydroxy-4'-methylbenzophenone- 1,2-
Naphthoquinonediazide-4-sulfonic acid ester, 2,
3,4,2'-tetrahydroxy-4'-methylbenzophenone-1,2-naphthoquinonediazide-5-sulfonic acid ester, 2,3,4,4'-tetrahydroxy-
3'-methoxybenzophenone-1,2-naphthoquinonediazide-4-sulfonic acid ester, 2,3,4,4 '
-Tetrahydroxy-3'-methoxybenzophenone-
1,2-naphthoquinonediazidosulfonic acid ester of tetrahydroxybenzophenone, such as 1,2-naphthoquinonediazide-5-sulfonic acid ester;

2,3,4,2 ', 6'-pentahydroxybenzophenone-1,2-naphthoquinonediazide-4
1,2-naphthoquinonediazidesulfonic acid ester of pentahydroxybenzophenone, such as -sulfonic acid ester, 2,3,4,2 ', 6'-pentahydroxybenzophenone-1,2-naphthoquinonediazide-5-sulfonic acid ester; , 4,6,3 ′, 4 ′, 5′-hexahydroxybenzophenone-1,2-naphthoquinonediazide-4-sulfonic acid ester, 2,4,6,3 ′,
4 ', 5'-hexahydroxybenzophenone-1,2
-Naphthoquinonediazide-5-sulfonic acid ester,
3,4,5,3 ′, 4 ′, 5′-hexahydroxybenzophenone-1,2-naphthoquinonediazide-4-sulfonic acid ester, 3,4,5,3 ′, 4 ′, 5′-hexahydroxybenzophenone 1,2-naphthoquinonediazidosulfonic acid ester of hexahydroxybenzophenone, such as -1,2-naphthoquinonediazide-5-sulfonic acid ester;

Bis (2,4-dihydroxyphenyl) methane-1,2-naphthoquinonediazide-4-sulfonic acid ester, bis (2,4-dihydroxyphenyl) methane-1,2-naphthoquinonediazide-5-sulfonic acid ester , Bis (p-hydroxyphenyl) methane-1,
2-naphthoquinonediazide-4-sulfonic acid ester,
Bis (p-hydroxyphenyl) methane-1,2-naphthoquinonediazide-5-sulfonic acid ester, tri (p
-Hydroxyphenyl) methane-1,2-naphthoquinonediazide-4-sulfonic acid ester, tri (p-hydroxyphenyl) methane-1,2-naphthoquinonediazide-5-sulfonic acid ester, 1,1,1-tri (p -Hydroxyphenyl) ethane-1,2-naphthoquinonediazide-4-sulfonic acid ester, 1,1,1-tri (p
-Hydroxyphenyl) ethane-1,2-naphthoquinonediazide-5-sulfonic acid ester, bis (2,3,4
-Trihydroxyphenyl) methane-1,2-naphthoquinonediazide-4-sulfonic acid ester, bis (2
3,4-trihydroxyphenyl) methane-1,2-naphthoquinonediazide-5-sulfonic acid ester, 2,2
-Bis (2,3,4-trihydroxyphenyl) propane-1,2-naphthoquinonediazide-4-sulfonic acid ester, 2,2-bis (2,3,4-trihydroxyphenyl) propane-1,2- Naphthoquinonediazide-5
-Sulfonic acid esters, 1,1,3-tris (2,5-
Dimethyl-4-hydroxyphenyl) -3-phenylpropane-1,2-naphthoquinonediazide-4-sulfonic acid ester, 1,1,3-tris (2,5-dimethyl-
4-hydroxyphenyl) -3-phenylpropane-
1,2-naphthoquinonediazide-5-sulfonic acid ester, 4,4 '-[1- [4- [1- [4-hydroxyphenyl] -1-methylethyl] phenyl] ethylidene]
Bisphenol-1,2-naphthoquinonediazide-4-
Sulfonate, 4,4 '-[1- [4- [1-
[4-hydroxyphenyl] -1-methylethyl] phenyl] ethylidene] bisphenol-1,2-naphthoquinonediazide-5-sulfonic acid ester, bis (2,5
-Dimethyl-4-hydroxyphenyl) -2-hydroxyphenylmethane-1,2-naphthoquinonediazide-4
-Sulfonic acid ester, bis (2,5-dimethyl-4-
(Hydroxyphenyl) -2-hydroxyphenylmethane-1,2-naphthoquinonediazide-5-sulfonic acid ester, 3,3,3 ′, 3′-tetramethyl-1,1′-
Spirobiindene-5,6,7,5 ', 6', 7'-hexanol-1,2-naphthoquinonediazide-4-sulfonic acid ester, 3,3,3 ', 3'-tetramethyl-
1,1′-spirobiindene-5,6,7,5 ′,
6 ', 7'-hexanol-1,2-naphthoquinonediazide-5-sulfonic acid ester, 2,2,4-trimethyl-7,2', 4'-trihydroxyflavan-1,2
-Naphthoquinonediazide-4-sulfonic acid ester,
1,2-Naphthoquinonediazide sulfonic acid ester of (polyhydroxyphenyl) alkane such as 2,2,4-trimethyl-7,2 ', 4'-trihydroxyflavan-1,2-naphthoquinonediazide-5-sulfonic acid ester Is mentioned.

In addition to these compounds, J. Kosar, "L.
ight-Sensitive Systems ”339-352 (1965), John Wil
"Photo by ey & Sons (New York) and WS De Fores
resist "50 (1975) 1,2-quinonediazide compounds described in McGraw-Hill, Inc. (New York) can be used. These 1,2-quinonediazide compounds may be partially or wholly used as described above. (A) It may be used in a form in which it is reacted with an alkali-soluble resin having an epoxy group to form a condensate.

Of these 1,2-quinonediazide compounds, preferably 2,3,4-trihydroxybenzophenone-1,2-naphthoquinonediazide-5-sulfonic acid ester, 2,4,6-trihydroxybenzophenone- 1,2-Naphthoquinonediazide-5-sulfonic acid ester
Naphthoquinonediazidosulfonic acid esters; 2,3
4,3′-tetrahydroxybenzophenone-1,2-
Naphthoquinonediazide-5-sulfonic acid ester, 2,
3,4,4'-tetrahydroxybenzophenone-1,
2-naphthoquinonediazide-4-sulfonic acid ester,
2,3,4,4'-tetrahydroxybenzophenone-
1,2-naphthoquinonediazide-5-sulfonic acid ester, 2,3,4,4'-tetrahydroxy-3'-methoxybenzophenone-1,2-naphthoquinonediazide-
1,2-naphthoquinonediazidosulfonic acid ester of tetrahydroxybenzophenone such as 5-sulfonic acid ester; bis (2,4-dihydroxyphenyl) methane-
1,2-naphthoquinonediazide-5-sulfonic acid ester, bis (p-hydroxyphenyl) methane-1,2-
Naphthoquinonediazide-5-sulfonic acid ester, tri (p-hydroxyphenyl) methane-1,2-naphthoquinonediazide-5-sulfonic acid ester, 1,1,1-
Tri (p-hydroxyphenyl) ethane-1,2-naphthoquinonediazide-5-sulfonic acid ester, bis (2,3,4-trihydroxyphenyl) methane-1,
2-naphthoquinonediazide-5-sulfonic acid ester,
2,2-bis (2,3,4-trihydroxyphenyl)
Propane-1,2-naphthoquinonediazide-5-sulfonic acid ester, 1,1,3-tris (2,5-dimethyl-4-hydroxyphenyl) -3-phenylpropane-
1,2-naphthoquinonediazide-5-sulfonic acid ester is exemplified.

More preferably, 2,3,4-trihydroxybenzophenone-1,2-naphthoquinonediazide-5-sulfonic acid ester, 2,3,4,4'-tetrahydroxybenzophenone-1,2-naphthoquinonediazide- 4-sulfonic acid ester, 2,3,4,4′-tetrahydroxybenzophenone-1,2-naphthoquinonediazide-5-sulfonic acid ester, 2,3,4,4 ′
-Tetrahydroxy-3'-methoxybenzophenone-
1,2-naphthoquinonediazidosulfonic acid ester of tetrahydroxybenzophenone such as 1,2-naphthoquinonediazide-5-sulfonic acid ester; 1,1,1-tri (p-hydroxyphenyl) ethane-1,2-naphthoquinonediazide- 5-sulfonic acid ester, bis (2
3,4-trihydroxyphenyl) methane-1,2-naphthoquinonediazide-5-sulfonic acid ester, 2,2
-Bis (2,3,4-trihydroxyphenyl) propane-1,2-naphthoquinonediazide-5-sulfonic acid ester, 1,1,3-tris (2,5-dimethyl-4-
(Hydroxyphenyl) -3-phenylpropane-1,2
-Naphthoquinonediazide-5-sulfonic acid ester.

The above 1,2-quinonediazide compounds can be used alone or as a mixture of two or more.
(B) The amount of the 1,2-quinonediazide compound added is (a)
The amount is preferably 5 to 100 parts by weight, more preferably 10 to 50 parts by weight, based on 100 parts by weight of the alkali-soluble resin resin having an epoxy group. If the amount is less than 5 parts by weight, patterning may be difficult,
On the other hand, if it exceeds 100 parts by weight, it may be difficult to develop with a developing solution composed of an alkaline aqueous solution.

The radiation-sensitive resin composition of the present invention other additives, so long as it does not impair the object of the present invention, it is possible to use other additives. Examples of such other additives include a sensitizer, a surfactant, an adhesion aid, a storage stabilizer, and an antifoaming agent.

The above sensitizer can be added for the purpose of improving the radiation sensitivity of the radiation-sensitive composition of the present invention. Examples of the sensitizer include 2H-pyrido- (3,
2-b) -1,4-oxazin-3 (4H) -ones,
10H-pyrido- (3,2-b)-(1,4) -benzothiazines, urazoles, hydantoins, barbituric acids, glycine anhydrides, 1-hydroxybenzotriazoles, alloxane , Maleimides and the like. The amount of these sensitizers is preferably 1 to 100 parts by weight of (b) 1,2-quinonediazide compound.
It is not more than 00 parts by weight, more preferably 1 to 50 parts by weight.

The above-mentioned surfactant can be blended in order to improve the coating properties, for example, the developability of the radiation-irradiated portion after the formation of a striation or a dried coating film. Examples of the surfactant include polyoxyethylene alkyl ethers such as polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, and polyoxyethylene oleyl ether; polyoxyethylene octyl phenyl ether; polyoxyethylene such as polyoxyethylene nonyl phenyl ether; Nonionic surfactants such as polyethylene glycol dialkyl esters such as ethylene aryl ethers, polyethylene glycol dilaurate, and polyethylene glycol distearate; EFTOP EF3
01, 303, 352 (manufactured by Shin-Akita Kasei Co., Ltd.), Megafac F171, 172, 173 (Dainippon Ink Co., Ltd.)
Co., Ltd.), Florado FC430, 431 (manufactured by Sumitomo 3M Limited), Asahi Guard AG710, Surflon S-
382, SC-101, 102, 103, 104, 10
5, 106 (manufactured by Asahi Glass Co., Ltd.), fluorine surfactants, organosiloxane polymer KP341 (manufactured by Shin-Etsu Chemical Co., Ltd.), acrylic acid or methacrylic acid (co) polymer polyflow No. 57, 95 (Manufactured by Kyoeisha Chemical Co., Ltd.). The amount of such a surfactant is usually 2 parts by weight or less, preferably 1 part by weight or less, based on the solid content of the composition.

The above-mentioned adhesion aid can be used for improving the adhesion between the insulating film formed from the radiation-sensitive composition of the present invention and the substrate. As such an adhesion aid, a functional silane coupling agent is preferably used,
For example, a silane coupling agent having a reactive substituent such as a carboxyl group, a methacryloyl group, an isocyanate group, or an epoxy group may be used. Specifically, trimethoxysilylbenzoic acid, γ-methacryloxypropyltrimethoxysilane, vinyltriacetoxysilane, vinyltrimethoxysilane, γ-isocyanatopropyltriethoxysilane, γ-glycidoxypropyltrimethoxysilane, β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane and the like. The amount of such a surfactant is usually 15 parts by weight or less, preferably 10 parts by weight or less, per 100 parts by weight of the solid content of the composition.

The radiation-sensitive resin composition of the present invention is usually used after being dissolved in a solvent. Examples of the solvent used for preparing the radiation-sensitive resin composition of the present invention include the above-mentioned (a) an alkali-soluble resin having an epoxy group, (b) a 1,2-quinonediazide compound, and other optional additives. Those that dissolve the agent uniformly and do not react with each component are used.

Specific examples of the solvent used for preparing the radiation-sensitive resin composition of the present invention include alcohols such as methanol and ethanol; ethers such as tetrahydrofuran; ethylene glycol monomethyl ether; ethylene glycol monoethyl ether; Ethylene glycol alkyl ether acetates such as methyl cellosolve acetate and ethyl cellosolve acetate; diethylene glycol alkyl ethers such as diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, and diethylene glycol ethyl methyl ether; propylene glycol Methyl ether, propylene glycol Propylene glycol monoalkyl ethers such as ethyl ether, propylene glycol propyl ether and propylene glycol butyl ether; propylene glycol alkyl ethers such as propylene glycol methyl ether acetate, propylene glycol ethyl ether acetate, propylene glycol propyl ether acetate propylene glycol butyl ether acetate, etc. Acetates; propylene glycol alkyl ether acetates such as propylene glycol methyl ether propionate, propylene glycol ethyl ether propionate, propylene glycol propyl ether propionate, and propylene glycol butyl ether propionate; properties such as toluene and xylene Family hydrocarbons; methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, 2-heptanone, 4-hydroxy-4
Ketones such as -methyl-2-pentanone;

And methyl acetate, ethyl acetate, propyl acetate, butyl acetate, ethyl 2-hydroxypropionate, methyl 2-hydroxy-2-methylpropionate,
Ethyl 2-hydroxy-2-methylpropionate, methyl hydroxyacetate, ethyl hydroxyacetate, butyl hydroxyacetate, methyl lactate, ethyl lactate, propyl lactate,
Butyl lactate, methyl 3-hydroxypropionate, 3-
Ethyl hydroxypropionate, protyl 3-hydroxypropionate, butyl 3-hydroxypropionate,
Methyl 2-hydroxy-3-methylbutanoate, methyl methoxyacetate, ethyl methoxyacetate, propyl methoxyacetate, butyl methoxyacetate, methyl ethoxyacetate, ethyl ethoxyacetate, propyl ethoxyacetate, butyl ethoxyacetate, methyl propoxyacetate, ethyl propoxyacetate,
Propyl propyl acetate, butyl propoxy acetate, methyl butoxy acetate, ethyl butoxy acetate, propyl butoxy acetate, butyl butoxy acetate, methyl 2-methoxypropionate, ethyl 2-methoxypropionate, propyl 2-methoxypropionate, 2-methoxypropionic acid Butyl, methyl 2-ethoxypropionate, ethyl 2-ethoxypropionate, propyl 2-ethoxypropionate, butyl 2-ethoxypropionate, methyl 2-butoxypropionate, ethyl 2-butoxypropionate, propyl 2-butoxypropionate Butyl 2-butoxypropionate, methyl 3-methoxypropionate, ethyl 3-methoxypropionate, propyl 3-methoxypropionate, butyl 3-methoxypropionate, 3-ethoxypropionate Methyl phosphate, ethyl 3-ethoxypropionate, propyl 3-ethoxypropionate, butyl 3-ethoxypropionate, methyl 3-propoxypropionate, ethyl 3-propoxypropionate, propyl 3-propoxypropionate, 3-propoxypropion Esters such as butyl acid, methyl 3-butoxypropionate, ethyl 3-butoxypropionate, propyl 3-butoxypropionate, and butyl 3-butoxypropionate.

Among these solvents, glycol ethers, ethylene glycol alkyl ether acetates, propylene glycol alkyl ether acetates, esters and the like are preferred because of their solubility, reactivity with each component, and ease of forming a coating film. And diethylene glycol alkyl ethers are preferably used. These solvents are
They can be used alone or as a mixture.

Further, if necessary, benzyl ethyl ether, dihexyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, acetonylacetone, isophorone, caproic acid, caprylic acid, 1-octanol, 1-nonanol, benzyl High boiling solvents such as alcohol, benzyl acetate, ethyl benzoate, diethyl oxalate, diethyl maleate, γ-butyrolactone, ethylene carbonate, propylene carbonate, phenyl cellosolve acetate, carbitol acetate and the like can also be added.

The radiation-sensitive composition of the present invention is prepared using the above-mentioned solvent. Depending on the purpose of use, an appropriate solid content concentration can be adopted.
% By weight. Further, the composition solution prepared as described above can be used after being filtered using a Millipore filter having a pore diameter of about 0.2 μm.

Method for Forming Insulating Film of Organic EL Display Element Using the radiation-sensitive resin composition of the present invention, an insulating film of an organic EL display element can be formed, for example, as follows. The radiation-sensitive resin composition of the present invention can be applied to the surface of an underlying substrate, and the solvent can be removed by pre-baking to form a coating film. As the coating method, for example, an appropriate method such as a spray method, a roll coating method, a spin coating method, and a bar coating method can be adopted. The conditions of the pre-bake vary depending on the type of each component, the blending ratio, and the like, but the optimal conditions are usually 60 to 110 ° C. for about 0.5 to 15 minutes. The film thickness after prebaking can be a desired value depending on the solid content concentration of the radiation-sensitive composition and the application conditions, but can be about 0.25 to 4 μm.

Next, the formed coating film is irradiated with radiation through a mask having a predetermined pattern. Examples of the radiation used here include ultraviolet rays such as g-ray (wavelength 436 nm) and i-ray (wavelength 365 nm), far ultraviolet rays such as KrF excimer laser, X-rays such as synchrotron radiation, and charged particle rays such as electron beams. No. Of these, g-line and i-line are preferred. After the irradiation with the radiation, a desired pattern can be obtained by removing the irradiated part by performing a development treatment using a developing solution. Examples of the developer used herein include inorganic alkalis such as sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate, and aqueous ammonia; primary amines such as ethylamine and n-propylamine. Secondary amines such as diethylamine and di-n-propylamine; tertiary amines such as triethylamine and methyldiethylamine; dimethylethanolamine and triethanol-
Alcoholamines such as ruamine; quaternary ammonium salts such as tetramethylammonium hydroxide, tetraethylammonium hydroxide, and choline;
, Piperidine, 1,8-diazabicyclo- (5.4.
0) -7-undecene, 1,5-diazabicyclo-
An aqueous alkali solution in which a cyclic amine such as (4.3.0) -5-nonane is dissolved in water is preferably used. In addition, the developer includes a water-soluble organic solvent such as methanol and ethanol.
Alcohols and surfactants can be added in appropriate amounts. Further, various organic solvents that dissolve the composition of the present invention can also be used as the developer. As a developing method, a puddle method, a dipping method, a rocking dipping method, or the like can be used.

After the development process, the patterned film may be subjected to a rinsing process, for example, by washing with running water.
Furthermore, by irradiating the entire surface with radiation from a high-pressure mercury lamp or the like, a 1,2-quinonediazide compound remaining in the film can be decomposed.

Thereafter, the film is cured by heating using a heating device such as a hot plate oven. The heating temperature in this curing process is, for example,
The heating time can be 5 to 30 minutes when firing on a hot plate, and 30 to 90 minutes when firing in an oven.

Production of Organic EL Device The organic EL device of the present invention has the insulating film formed as described above. The organic EL device of the present invention is manufactured, for example, as follows. Driving terminals are formed on a substrate such as glass, and the insulating film of the present invention is formed thereon as described above. A transparent electrode (hole injection electrode) such as ITO is deposited thereon by sputtering, and a pattern is formed by a wet etching method. Further, a hole transport layer, an organic EL layer, an electron transport layer, and an electron injection electrode are sequentially formed thereon by an evaporation method. As the hole transport layer, for example, a phthalocyanine-based material such as CuPc or H ₂ Pc;
Alternatively, an aromatic amine is used. Further, as the organic EL medium, for example, a material such as Alq ₃ or BeBq _{3 in which} a base material is doped with quinacridone or coumarin is used. Further, as the electron transport layer, for example, Alq ₃ or the like, and as the electron injection electrode material, for example, Mg-Al, Al
-Li, Al-Li ₂ O, etc. Al-LiF is used. Next, the hollow SUS can and the substrate are sealed with a sealing material such as an epoxy resin, and then assembled into a module to obtain an organic EL element.

[0048]

EXAMPLES The present invention will be described in more detail with reference to the following examples, but the present invention is not limited to these examples. The molecular weight measured below is a weight average molecular weight in terms of polystyrene measured by GPC Chromatograph HLC-8020 manufactured by Tosoh Corporation.

An alkali-soluble resin having an epoxy group
Synthesis Example 1 In a 1 L separable flask equipped with a stirrer and a thermometer, (a1) glycidyl methacrylate was used as a monomer.
50.0 g, (a2) methacrylic acid 2 as a monomer
0.0g, 7.5 g of butadiene and 22.5 g of tricyclo [5.2.1.0 ^2,6 ] decane-8-yl methacrylate as the component (a3), 250.0 g of diethylene glycol dimethyl ether as a solvent, and as a polymerization initiator After charging 4.0 g of 2,2′-azobisbutyronitrile and purging with nitrogen for 30 minutes, the separable flask was immersed in an oil bath, and the internal temperature was maintained at 80 ° C.
Polymerization was carried out for 3.5 hours with stirring to obtain a solution containing Resin 1. The solution containing the resin 1 thus obtained had a solid content concentration of 30% by weight. The polystyrene equivalent weight average molecular weight of Resin 1 was 2.1 × 10 ⁴ .

An alkali-soluble resin having an epoxy group
Synthesis Example 2 (a1) as a monomer o- vinylbenzyl glycidyl ether 28.0 g, and glycidyl methacrylate 4
0.0g, (a2) methacrylic acid 22.0 as a monomer
g, (a3) A solution containing resin 2 was obtained in the same manner as in Synthesis Example 1 except that 10.0 g of styrene was used as a monomer. The solid content concentration of the solution containing the resin 2 obtained here was 30% by weight. The polystyrene equivalent weight average molecular weight of Resin 2 was 1.7 × 10 ⁴ .

The alkali-soluble resin having an epoxy group
Synthesis Example 3 (a1) 21.0 g of o-vinylbenzyl glycidyl ether and glycidyl methacrylate 2 as monomers
5.0 g, (a2) methacrylic acid 18.0 as a monomer
g, (a3) A solution containing Resin 3 was obtained in the same manner as in Synthesis Example 1, except that 10.0 g of styrene and 26.0 g of n-propyl acrylate were used as monomers. The solid content concentration of the solution containing the resin 3 obtained here was 30% by weight. The polystyrene equivalent weight average molecular weight of Resin 3 was 1.5 × 10 ⁴ .

Example 1 Preparation of Radiation-Sensitive Resin Composition 333 parts by weight of a solution containing the resin 1 obtained in Synthesis Example 1 as the component (a) (corresponding to 100 parts by weight (solid content) as the resin 1), b) Component 1,1,3-tris (2,5-
Condensation product of dimethyl-4-hydroxyphenyl) -3-phenylpropane (1.0 mol) and 1,2-naphthoquinonediazide-5-sulfonic acid chloride (1.9 mol) (1,1,3-tris ( 2,5-dimethyl-4-hydroxyphenyl) -3-phenylpropane-1,2-naphthoquinonediazide-5-sulfonic acid ester) 30.0
Parts by weight were mixed, diluted and dissolved with propylene glycol methyl ether acetate so that the total solid content was 30%, and then filtered through a membrane filter having a pore size of 0.2 μm to prepare a composition solution.

[0053] patterned thin film composition solution prepared above to form a glass substrate of the (insulating film) of, 1.2 microns
m at a film thickness of 80 m.
Prebaked on a hot plate for minutes to form a coating. A Nikon NSR1755i7A reduction projection exposure machine (NA =
0.50, λ = 365 nm), and then exposed to an aqueous solution of tetramethylammonium hydroxide at 25 ° C., 1
Minutes. Thereafter, the film was washed with running water and dried to form a pattern on the wafer. Next, 300m with a ghi mixing line using an aligner PLA501F made by Canon.
Irradiate ultraviolet rays of J / cm ² , and further 22
By heating at 0 ° C. for 60 minutes, a patterned thin film having a thickness of 1.0 μm was formed.

The presence or absence of scum (observation with an optical microscope)
Observation) When the patterned thin film obtained above was observed using an optical microscope, no scum was generated, and a 5.0 μm square through hole was also opened.

Evaluation of Transparency For the glass substrate on which the patterned thin film having a thickness of 1.0 μm was formed as described above, the light transmittance was measured using a spectrophotometer 150.
The measurement was performed using a -20 type double beam (manufactured by Hitachi, Ltd.). Table 1 shows the minimum transmittance in the wavelength region of 400 to 700 nm. When this value is 80% or more, it can be said that the transparency is good.

Evaluation of Alkali Resistance The glass substrate on which the patterned thin film was formed was immersed in a 1% NaOH aqueous solution whose temperature was controlled at 25 ° C. for 20 minutes.
The film thickness before immersion at this time is T1, the film thickness after immersion is t1, and the ratio of the film thickness before and after immersion (t1 / T1) × 100 [%]
Was calculated. The results are shown in Table 1. This value is 95-
When it is 105%, it can be said that the alkali resistance is good.

[0057] The solvent resistance evaluation patterned thin film dimethylsulfoxide temperature controlled glass substrate formed to 25 ° C. The dimethylsulfoxide / N- methylpyrrolidone mixed solution (weight ratio 70/30) was immersed for 20 minutes.
At this time, the film thickness before immersion is T2, the film thickness after immersion is t2, and the ratio of the film thickness before and after immersion (t2 / T2) × 100 [%]
Was calculated. The results are shown in Table 1. This value is 95-
When it is 105%, it can be said that the solvent resistance is good.

Evaluation of heat resistance The glass substrate on which the patterned thin film was formed
For an additional 60 minutes. At this time, the film thickness before the additional bake is T3, the film thickness after the additional bake is t3, and the ratio of the film thickness before and after the additional bake (t3 / T3) × 100.
[%] Was calculated. The results are shown in Table 1. When this value is 95 to 105%, it can be said that the heat resistance is good.

[0059] The aluminum pattern evaluation 20μm line / 80 [mu] m space planarization performance, patterned on a silicon wafer substrate at a thickness of 1 [mu] m, and the above composition was applied as above. Then 80
Pre-bake at 1.5 ° C. for 1.5 minutes, and then with a Ghi mixing line using an aligner PLA501F manufactured by Canon.
The film was irradiated with ultraviolet rays of 00 mJ / cm ² and further heated at 220 ° C. for 60 minutes to form an insulating film. The unevenness of the surface of the formed insulating film was measured by α-step (manufactured by KLA Tencor). Table 1 shows the maximum height difference at that time. When this value is 0.2 μm or less, it can be said that the flattening property is good.

[0060]Brightness half life An organic EL panel for evaluation was prepared and 100 cd / m^Two {
(Red: 100 + Green: 200 + Blue: 10
0) cd / m^Two÷ 3 × 0.7 ≒ 100 cd / m ^Two } Screen
A lighting promotion test was conducted at a luminance of 105 ° C. Screen brightness
Table 1 shows the time required for the value to decrease by half. This value is 400
When the time is longer than the time, it can be said that the luminance half life is good.

Example 2 333 parts by weight of a solution containing resin 2 prepared in Synthesis Example 2 as component (a) (100 parts by weight as resin 2 (solid content))
) And 4,4 ′-[1- [4- [1
Condensation product of-[4-hydroxyphenyl] -1-methylethyl] phenyl] ethylidene] bisphenol (1.0 mol) and 1,2-naphthoquinonediazide-5-sulfonic acid chloride (2.0 mol) (4, 4 '-[1- [4-
[1- [4-Hydroxyphenyl] -1-methylethyl] phenyl] ethylidene] bisphenol-1,2-
Naphthoquinonediazide-5-sulfonic acid ester) 25
Except for using parts by weight, the same procedure as in Example 1 was carried out and evaluated. Table 1 shows the results.

Example 3 333 parts by weight of a solution containing resin 3 prepared in Synthesis Example 3 as component (a) (100 parts by weight as resin 3 (solid content))
And a condensate of 2,3,4-hydroxybenzophenone (1.0 mol) and 1,2-naphthoquinonediazide-5-sulfonic acid chloride (2.0 mol) as the component (b) (2,3 , 4-Hydroxybenzophenone-1,2
-Naphthoquinonediazide-5-sulfonic acid ester)
Except for using 20 parts by weight, the same procedure as in Example 1 was carried out.
evaluated. Table 1 shows the results.

Example 4 The procedure of Example 1 was repeated, except that the amount of the component (b) was changed to 40 parts by weight, and evaluated. Table 1 shows the results.

[0064]

[Table 1]

[0065]

According to the present invention, a through-hole or a U-shaped depression can be formed, and an insulating film of an organic EL device having excellent flattening performance, high transparency and high resistance to a resist stripping solution. There is provided a radiation-sensitive resin composition for forming Further, the insulating film of the present invention formed from the above composition is suitable for an organic EL display device, and the organic EL display device having the insulating film of the present invention has excellent reliability.

Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat II (Reference) H05B 33/14 H05B 33/14 A 33/22 33/22 Z (72) Inventor Kazuaki Niwa Tsukiji, Chuo-ku, Tokyo F-term (reference) No. 11-24, JSR Corporation 2H025 AA06 AA07 AA08 AA14 AA18 AA20 AB14 AD03 BA06 BE01 BJ00 BJ10 CB08 CB17 CB43 CB45 CB52 DA40 FA29 3K007 AB00 BB02 CA01 CB01 CD01 FA02 FD310 GQ01

Claims (5)

[Claims] 1. A radiation-sensitive resin composition for forming an insulating film of an organic EL display device, comprising: (a) an alkali-soluble resin containing an epoxy group; and (b) a 1,2-quinonediazide compound. object. 2. The method according to claim 1, wherein (a) the alkali-soluble resin having an epoxy group comprises (a1) an unsaturated monomer containing an epoxy group, (a2) an unsaturated carboxylic acid, an unsaturated carboxylic anhydride, and a phenolic hydroxyl group. At least one monomer selected from unsaturated monomers having: (a3)
The radiation-sensitive resin composition according to claim 1, which is a copolymer obtained by copolymerizing an olefinically unsaturated compound other than (a1) and (a2). 3. The radiation-sensitive radiation according to claim 1, wherein a minimum transmittance in a wavelength region of 400 to 700 nm is 80% or more when an insulating film having a thickness of 1.0 μm is formed from the composition. Resin composition. 4. An insulating film for an organic EL display element formed from the radiation-sensitive resin composition according to claim 1. 5. Organic E having the insulating film according to claim 4.
L display element.