JPH08262709A - Radiation sensitive resin composition - Google Patents

Abstract

PURPOSE: To obtain the radiation sensitive resin composition capable of easily forming a pattern like thin film sensitive to radiation and high in resolution and yet superior in various performances, such as insulation property, flatness, heat resistance, hardness, and transparency. CONSTITUTION: This composition comprises (A) 100 pts.wt. of an alkali-soluble resin comprising (a) a 5-50wt.% constituent derived from an unsaturated carboxylic acid and/or its acid anhydride, (b) a 10-90wt.% constituent derived from a radically polymerizable compound having an epoxy group, (c) a 10-70wt.% constituent derived from another monoolefinic unsaturated compound, and (d) a 3-30wt.% constituent derived from a conjugated diolefinic unsaturated compound, and (B) 5-100 pts.wt. of a 1,2-quinonediazido compound.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a radiation-sensitive resin composition, and more particularly to a material for forming a protective film or the like used in electronic parts, particularly a liquid crystal display device, an integrated circuit device, a solid-state image pickup device. The present invention relates to a radiation-sensitive resin composition suitable as a material for forming an interlayer insulating film such as an element.

[0002]

2. Description of the Related Art Generally, liquid crystal display devices, integrated circuit devices,
An electronic component such as a solid-state imaging device is provided with a protective film for preventing its deterioration and damage, a flattening film for flattening the device surface, an insulating film for maintaining electrical insulation, and the like. . In addition, a thin film transistor (hereinafter, “TFT”)
It is written. ) Type liquid crystal display elements and integrated circuit elements,
An interlayer insulating film is provided to insulate between the wirings arranged in layers.

However, in the case of forming an interlayer insulating film using a conventionally known material for forming a thermosetting insulating film for electronic parts, for example, in order to obtain an interlayer insulating film having a required pattern shape. There is a problem that the number of steps is large and an interlayer insulating film having sufficient flatness cannot be obtained.

[0004]

The present invention has been made based on the above circumstances, and its purpose is to:
Provided is a radiation-sensitive resin composition having radiation sensitivity, high resolution, and capable of easily forming a patterned thin film excellent in various properties such as insulation, flatness, heat resistance, and transparency. To do.

[0005]

The radiation-sensitive resin composition of the present invention comprises (A) (a) the constituent components 5 to 50 derived from the unsaturated carboxylic acid and / or unsaturated carboxylic acid anhydride.
% By weight, (b) 10 to 90% by weight of a component derived from a radically polymerizable compound having an epoxy group, (c) a component 1 derived from another monoolefinic unsaturated compound.
0 to 70% by weight, and (d) 100 parts by weight of an alkali-soluble resin consisting of 3 to 30% by weight of a constituent component derived from a conjugated diolefin unsaturated compound, and (B) 1,2-quinonediazide compound 5 to 100 parts by weight Parts are included.

The radiation-sensitive resin composition of the present invention will be specifically described below. The radiation-sensitive resin composition of the present invention comprises a component (A) made of a specific alkali-soluble resin,
Component (B) consisting of a 1,2-quinonediazide compound is contained as an essential component.

<Component (A)> The specific alkali-soluble resin as the component (A) is a monomer (a) composed of an unsaturated carboxylic acid and / or an unsaturated carboxylic acid anhydride, and a radical having an epoxy group. A monomer composed of a monomer (b) composed of a polymerizable compound, a monomer (c) composed of another monoolefin unsaturated compound, and a monomer (d) composed of a conjugated diolefin unsaturated compound. It is obtained by radically polymerizing a monomer in a solvent, for example.

Specific examples of the unsaturated carboxylic acid and / or unsaturated carboxylic acid anhydride as the monomer (a) include:
Monocarboxylic acids such as acrylic acid, methacrylic acid and crotonic acid; dicarboxylic acids such as maleic acid, fumaric acid, citraconic acid, mesaconic acid and itaconic acid; and anhydrides of these dicarboxylic acids. Of these, methacrylic acid, itaconic acid, itaconic anhydride and the like are preferable.

Specific examples of the radically polymerizable compound having an epoxy group as the monomer (b) include glycidyl acrylate, glycidyl methacrylate, α-ethyl glycidyl acrylate, α-n-propyl glycidyl acrylate and α. Glycidyl acrylate, 3,4-epoxybutyl acrylate, 3,4-epoxybutyl methacrylate, 6,7-epoxyheptyl acrylate, 6,7-epoxyheptyl methacrylate, vinyl Examples thereof include benzyl glycidyl ether, methyl glycidyl methacrylate, α-ethylacrylic acid-6,7-epoxyheptyl and the like. Of these, preferred are glycidyl methacrylate, vinylbenzyl glycidyl ether, methyl glycidyl methacrylate, and the like.

Specific examples of other monoolefinic unsaturated compounds which are the monomer (c) include alkyl methacrylate such as methyl methacrylate, ethyl methacrylate, n-butyl methacrylate, sec-butyl methacrylate and t-butyl methacrylate. Esters; alkyl acrylates such as methyl acrylate and isopropyl acrylate; cyclic methacrylic acid alkyl esters such as cyclohexyl methacrylate, dicyclopentanyl methacrylate, 2-methylcyclohexyl methacrylate, dicyclopentanyloxyethyl methacrylate and isobornyl methacrylate; cyclohexyl Acrylate, dicyclopentanyl acrylate, 2-methylcyclohexyl acrylate, dicyclopentanyl acrylate, diisocyanate Acrylic acid cyclic alkyl esters such as lopentaoxyethyl acrylate and isobornyl acrylate; Methacrylic acid aryl esters such as phenyl methacrylate and benzyl methacrylate; Acrylic acid aryl esters such as phenyl acrylate and benzyl acrylate; Diethyl maleate, Diethyl fumarate, Dicarboxylic acid diesters such as diethyl itaconic acid; Hydroxyalkyl esters such as 2-hydroxyethyl methacrylate and 2-hydroxypropyl methacrylate; Styrene, α-methylstyrene, m-methylstyrene, p-methylstyrene, vinyltoluene, p-methoxystyrene , Acrylonitrile, methacrylonitrile, vinyl chloride, vinylidene chloride, acrylamide, methacrylamide, vinyl acetate, etc. It Of these, preferred are methyl methacrylate, dicyclopentanyl methacrylate, benzyl methacrylate, styrene and the like.

Specific examples of the conjugated diolefin unsaturated compound which is the monomer (d) include 1,3-butadiene, isoprene, 2,3-dimethylbutadiene and 1,4-dimethylbutadiene. Among these, 1,3
-Butadiene can be preferably used.

As the polymerization initiator used for the polymerization of the monomer, a usual radical polymerization initiator can be used, for example, 2,2'-azobisisobutyronitrile,
2,2'-azobis- (2,4-dimethylvaleronitrile), 2,2'-azobis- (4-methoxy-2,4-
Azo compounds such as dimethylvaleronitrile); organic peroxides such as benzoyl peroxide, lauroyl peroxide, t-butylperoxypivalate, 1,1′-bis- (t-butylperoxy) cyclohexane; hydrogen peroxide, etc. You can When a peroxide is used as a polymerization initiator, it may be used in combination with a reducing agent as a redox type initiator. The molecular weight and distribution of the alkali-soluble resin are not particularly limited as long as the radiation-sensitive resin composition can be uniformly dissolved in the organic solvent described below.

Polymerization solvents used for the polymerization of monomers include alcohols such as methanol and ethanol; ethers such as tetrahydrofuran; ethylene glycol monomethyl ether, ethylene glycol dimethyl ether, ethylene glycol methyl ethyl ether, ethylene glycol monoethyl ether. Ethylene glycol alkyl ether acetates such as methyl cellosolve acetate and ethyl cellosolve acetate; Diethylene glycol such as diethylene glycol monomethyl ether, diethylene glycol diethyl ether, diethylene glycol dimethyl ether, diethylene glycol ethyl methyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether Le acids; propylene glycol methyl ether acetate, propylene glycol alkyl ether acetates such as propylene glycol ethyl ether acetate: toluene, xylene and the like aromatic hydrocarbons; methyl ethyl ketone, cyclohexanone,
Ketones such as 4-hydroxy-4-methyl-2-pentanone; ethyl 2-hydroxypropionate, methyl 2-hydroxy-2-methylpropionate, ethyl 2-hydroxy-2-methylpropionate, ethyl ethoxyacetate, hydroxy Ethyl acetate, methyl 2-hydroxy-2-methylbutanoate, methyl 3-methoxypropionate,
Esters such as ethyl 3-methoxypropionate, methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, ethyl acetate and butyl acetate can be mentioned. Among these, glycol esters such as ethylene glycol dimethyl ether; ethylene glycol alkyl ether acetates such as ethyl cellosolve acetate;
Esters such as ethyl 2-hydroxypropionate, methyl 3-methoxypropionate, and ethyl 3-ethoxypropionate; diethylene glycols such as diethylene glycol dimethyl ether are soluble in each monomer and gel does not occur during the polymerization reaction. It can be preferably used.

The alkali-soluble resin in the present invention is copolymerized with the epoxy group in the resin by copolymerizing the monomer (c) composed of other monoolefinic unsaturated compound as a third component in a ratio in a specific range. Suppresses reaction with unsaturated carboxylic acid and / or unsaturated carboxylic acid anhydride,
It is possible to prevent the polymerization system from gelling, and further to adjust the mechanical properties of the obtained resin and the solubility in an alkaline aqueous solution used as a developing solution.

In the present invention, the proportion of the constituents derived from the monomer (a) in the alkali-soluble resin is 5 to 5.
It is 50% by weight, preferably 7-40% by weight. If this proportion is less than 5% by weight, the resin becomes difficult to dissolve in an alkaline aqueous solution, and thus it becomes difficult to sufficiently remove the radiation-irradiated portion in the development processing. On the other hand, when this ratio exceeds 50% by weight, the solubility of the obtained resin in the alkaline aqueous solution becomes excessive, so that the film reduction phenomenon occurs due to the dissolution of the non-irradiated portion in the developing process.

Monomer (b) in alkali-soluble resin
The proportion of the constituents derived from is 10 to 90% by weight, preferably 20 to 80% by weight. If this proportion is less than 10% by weight, the heat resistance and solvent resistance of the thin film obtained from the radiation-sensitive resin composition will not be sufficient. On the other hand, when this ratio exceeds 90% by weight, the storage stability of the resin becomes insufficient.

Monomer (c) in alkali-soluble resin
The proportion of the constituents derived from is 10 to 70% by weight, particularly preferably 20 to 50% by weight. If this proportion is less than 10% by weight, gelation is likely to occur during the polymerization reaction, making it difficult to obtain the desired resin.
On the other hand, when this ratio exceeds 70% by weight, the solubility of the resin in an alkaline aqueous solution becomes low, or the heat resistance of the thin film obtained from the radiation-sensitive resin composition becomes insufficient. It may happen.

Monomer (d) in alkali-soluble resin
The ratio of the constituents derived from is 3 to 30% by weight, particularly preferably 5 to 15% by weight. By containing the constituent components derived from the monomer (d) in such a ratio, a thin film having high resolution and excellent flatness can be formed. If this ratio is less than 3% by weight, it is difficult to obtain a thin film having high resolution and sufficient flatness. On the other hand, when this ratio exceeds 30% by weight, the solubility of the resin in an alkaline aqueous solution becomes low, or the heat resistance of the thin film obtained from the radiation-sensitive resin composition becomes insufficient. .

<Component (B)> As the 1,2-quinonediazide compound, 1,2-benzoquinonediazidesulfonic acid ester, 1,2-naphthoquinonediazidesulfonic acid ester, 1,2-benzoquinonediazidesulfonic acid amide, 1,2 2-naphthoquinone diazide sulfonic acid amide etc. can be mentioned.

Specific examples thereof include 2,3,4-trihydroxybenzophenone-1,2-naphthoquinone azide-4-sulfonic acid ester and 2,3,4-trihydroxybenzophenone-1,2-naphthoquinonediazide- 5-sulfonic acid ester, 2,4,6-trihydroxybenzophenone-1,2-naphthoquinonediazide-4
-1,2-naphthoquinonediazide sulfonic acid esters of trihydroxybenzophenone such as -sulfonic acid ester, 2,4,6-trihydroxybenzophenone-1,2-naphthoquinonediazide-5-sulfonic acid ester;
2,2 ', 4,4'-Tetrahydroxybenzophenone-1,2-naphthoquinonediazide-4-sulfonic acid ester, 2,2', 4,4'-tetrahydroxybenzophenone-1,2-naphthoquinonediazide-5 Sulfonic acid ester, 2,3,4,3′-tetrahydroxybenzophenone-1,2-naphthoquinonediazide-4-sulfonic acid ester, 2,3,4,3′-tetrahydroxybenzophenone-1,2-naphthoquinonediazide- 5-
Sulfonic acid ester, 2,3,4,4'-tetrahydroxybenzophenone-1,2-naphthoquinonediazide-
4-sulfonic acid ester, 2,3,4,4'-tetrahydroxybenzophenone-1,2-naphthoquinonediazide-5-sulfonic acid ester, 2,3,4,2'-tetrahydroxy-4'-methylbenzophenone- 1,2-
Naphthoquinonediazide-4-sulfonic acid ester, 2,
3,4,2'-Tetrahydroxy-4'-methylbenzophenone-1,2-naphthoquinonediazide-5-sulfonic acid ester, 2,3,4,4'-tetrahydroxy-
3'-methoxybenzophenone-1,2-naphthoquinonediazide-4-sulfonic acid ester, 2,3,4,4 '
-Tetrahydroxy-3'-methoxybenzophenone-
1,2-naphthoquinonediazide-5-sulfonic acid ester and other tetrahydroxybenzophenone 1,2-naphthoquinonediazidesulfonic acid ester;
2 ', 6'-pentahydroxybenzophenone-1,2
-Naphthoquinonediazide-4-sulfonic acid ester,
1,3 of pentahydroxybenzophenone such as 2,3,4,2 ′, 6′-pentahydroxybenzophenone-1,2-naphthoquinonediazide-5-sulfonate
-Naphthoquinone diazide sulfonate; 2,4
6,3 ', 4', 5'-Hexahydroxybenzophenone-1,2-naphthoquinonediazide-4-sulfonic acid ester, 2,4,6,3 ', 4', 5'-hexahydroxybenzophenone-1,2 -Naphthoquinone diazide-
5-sulfonic acid ester, 3,4,5,3 ', 4',
5'-hexahydroxybenzophenone-1,2-naphthoquinonediazide-4-sulfonic acid ester, 3,4
5,3 ′, 4 ′, 5′-Hexahydroxybenzophenone-1,2-naphthoquinonediazide-5-sulfonic acid ester and other hexahydroxybenzophenone 1,2-
Naphthoquinonediazide sulfonate; bis (2,
4-dihydroxyphenyl) methane-1,2-naphthoquinonediazide-4-sulfonic acid ester, bis (2,4
-Dihydroxyphenyl) methane-1,2-naphthoquinonediazide-5-sulfonic acid ester, bis (p-hydroxyphenyl) methane-1,2-naphthoquinonediazide-4-sulfonic acid ester, bis (p-hydroxyphenyl) methane- 1,2-naphthoquinonediazide-5-
Sulfonate, tri (p-hydroxyphenyl)
Methane-1,2-naphthoquinonediazide-4-sulfonic acid ester, tri (p-hydroxyphenyl) methane-
1,2-naphthoquinonediazide-5-sulfonic acid ester, 1,1,1-tri (p-hydroxyphenyl) ethane-1,2-naphthoquinonediazide-4-sulfonic acid ester, 1,1,1-tri (p -Hydroxyphenyl)
Ethane-1,2-naphthoquinonediazide-5-sulfonic acid ester, bis (2,3,4-trihydroxyphenyl) methane-1,2-naphthoquinonediazide-4-sulfonic acid ester, bis (2,3,4-) Trihydroxyphenyl) methane-1,2-naphthoquinonediazide-5-
Sulfonic acid ester, 2,2-bis (2,3,4-trihydroxyphenyl) propane-1,2-naphthoquinonediazide-4-sulfonic acid ester, 2,2-bis (2,3,4-trihydroxyphenyl) ) Propane-
1,2-naphthoquinonediazide-5-sulfonic acid ester, 1,1,3-tris (2,5-dimethyl-4-hydroxyphenyl) -3-phenylpropane-1,2-naphthoquinonediazide-4-sulfonic acid ester , 1,
1,3-Tris (2,5-dimethyl-4-hydroxyphenyl) -3-phenylpropane-1,2-naphthoquinonediazide-5-sulfonate, 4,4 '-[1
-[4- [1- [4-hydroxyphenyl] -1-methylethyl] phenyl] ethylidene] bisphenol-
1,2-naphthoquinonediazide-4-sulfonic acid ester, 4,4 ′-[1- [4- [1- [4-hydroxyphenyl] -1-methylethyl] phenyl] ethylidene]
Bisphenol-1,2-naphthoquinonediazide-5-
Sulfonic acid ester, bis (2,5-dimethyl-4-hydroxyphenyl) -2-hydroxyphenylmethane-
1,2-naphthoquinonediazide-4-sulfonic acid ester, bis (2,5-dimethyl-4-hydroxyphenyl) -2-hydroxyphenylmethane-1,2-naphthoquinonediazide-5-sulfonic acid ester, 3,3,3
3 ', 3'-Tetramethyl-1,1'-spirobiindene-5,6,7,5', 6 ', 7'-hexanol-
1,2-naphthoquinonediazide-4-sulfonic acid ester, 3,3,3 ', 3'-tetramethyl-1,1'-spirobiindene-5,6,7,5', 6 ', 7'- Hexanol-1,2-naphthoquinonediazide-5-sulfonic acid ester, 2,2,4-trimethyl-7,2 ',
4'-trihydroxyflavan-1,2-naphthoquinonediazide-4-sulfonic acid ester, 2,2,4-trimethyl-7,2 ', 4'-trihydroxyflavan-
1,2-naphthoquinonediazide-5-sulfonic acid ester and other (polyhydroxyphenyl) alkane 1,2-
Examples include naphthoquinone diazide sulfonic acid ester. These 1,2-quinonediazide compounds can be used alone or in combination of two or more kinds.

The proportion of the component (B) used is 10 parts of the component (A).
5 to 100 parts by weight, preferably 10 to 0 parts by weight
50 parts by weight. When this ratio is less than 5 parts by weight, the amount of acid generated by irradiation with radiation is small,
The difference in solubility between the radiation-irradiated portion and the non-irradiated portion in an alkaline aqueous solution serving as a developer is small, and patterning becomes difficult. Further, since the amount of acid involved in the reaction of the epoxy group is small, sufficient heat resistance and solvent resistance cannot be obtained. On the other hand, when this ratio exceeds 100 parts by weight, a large amount of unreacted component (B) remains after irradiation with radiation for a short time, so that the effect of insolubilizing the alkaline aqueous solution is too high and development is performed. Will be difficult.

<Other Components> In the radiation-sensitive resin composition of the present invention, in addition to the above-mentioned components (A) and (B), a heat-sensitive acid-forming compound (C) is optionally added. A component, a component (D) composed of a polymerizable compound having at least one ethylenically unsaturated double bond, a component (E) composed of an epoxy resin, and a component (F) composed of a surfactant can be contained.

The heat-sensitive acid-forming compound which is the component (C) can be used to improve heat resistance and hardness. Specific examples thereof include antimony fluorides, and commercially available products include: San-Aid SI-L80, San-Aid SI-L110, San-Aid SI-L150 (above, Sanshin Chemical Industry Co., Ltd. product) etc. are mentioned.

The proportion of component (C) used is preferably 0 to 50 parts by weight, more preferably 10 to 30 parts by weight, per 100 parts by weight of the alkali-soluble resin of component (A). If this ratio exceeds 50 parts by weight, precipitates are generated,
Patterning becomes difficult.

The polymerizable compound having at least one ethylenically unsaturated double bond as the component (D) is a monofunctional (meth) acrylate, a bifunctional (meth) acrylate or a trifunctional or higher functional (meth). Acrylate can be preferably used. As the monofunctional (meth) acrylate, commercially available products such as Aronix M-10 are available.
1, the same M-111, the same M-114 (above, Toa Gosei Chemical Industry Co., Ltd. product), AKAYARAD TC-110S,
The same TC-120S (all manufactured by Nippon Kayaku Co., Ltd.), V-1
58, V-2311 (above, Osaka Organic Chemical Industry Co., Ltd.)
Manufactured). As the bifunctional (meth) acrylate, commercially available products such as Aronix M-
210, the same M-240, the same M-6200 (above, manufactured by Toa Gosei Chemical Industry Co., Ltd.), KAYARAD HDDA, the same HX-220, the same R-604 (above, Nippon Kayaku Co., Ltd.).
Manufactured by Osaka Organic Chemical Industry Co., Ltd.), V260, V312, V335HP. As a trifunctional or higher functional (meth) acrylate, as a commercial product,
For example, Aronix M-309, M-400, M-
405, M-450, M-7100, M-803.
0, the same M-8060, the same M-402, the same M-7200,
TO-1190, TO-1190A, TO-11
90C, M-8100 (above, manufactured by Toagosei Co., Ltd.), KAYARAD TMPTA, DPCA.
-20, DPCA-30, DPCA-60, DP
CA-120 (Nippon Kayaku Co., Ltd.), V-29
5, V-300, V-360, V-GPT, V-3P
A, V-400 (above, Osaka Organic Chemical Industry Co., Ltd. product) can be mentioned.

The proportion of component (D) used is that of component (A) 10
It is preferably 50 parts by weight or less, and particularly preferably 30 parts by weight or less with respect to 0 parts by weight. By containing the component (D) in such a ratio, it is possible to improve the flatness, heat resistance, hardness, etc. of the thin film obtained from the radiation-sensitive resin composition. If this proportion exceeds 50 parts by weight,
The compatibility of the component (A) with the alkali-soluble resin becomes insufficient, and the film surface may be roughened.

The epoxy resin as the component (E) is not limited as long as it does not affect the compatibility, but is preferably bisphenol A type epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin, Examples thereof include a cycloaliphatic epoxy resin, a glycidyl ester type epoxy resin, a glycidyl amine type epoxy resin, a heterocyclic epoxy resin, and a resin obtained by (co) polymerizing glycidyl methacrylate.
Among these, bisphenol A type epoxy resin, cresol novolac type epoxy resin, glycidyl ester type epoxy resin and the like are preferable.

The proportion of component (E) used is preferably 30 parts by weight or less per 100 parts by weight of the alkali-soluble resin. By containing the component (E) in such a ratio, it is possible to further improve the flatness, heat resistance, hardness and the like of the thin film obtained from the radiation-sensitive resin composition. If this ratio exceeds 30 parts by weight, the compatibility with the alkali-soluble resin becomes insufficient and sufficient film forming ability cannot be obtained.

The surfactant as the component (F) has a coating property,
It can be used to improve the flatness, and a specific example thereof is BM-1000 (BM Chem).
IE product), Megafax F142D, F172,
F173, F183 (all manufactured by Dainippon Ink and Chemicals, Inc.), Florard FC-135, FC-170.
C, Florard FC-430, FC-431 (above,
Sumitomo 3M Ltd.), Surflon S-112, S-113, S-131, S-141, S-14.
5 (manufactured by Asahi Glass Co., Ltd.), SH-28PA, SH-19
0, SH-193, SZ-6032, SF-8428,
DC-57, DC-190 (manufactured by Toray Silicone Co., Ltd.)
Fluorine-based surfactants commercially available in Japan can be used. The proportion of the component (F) used is 5 parts by weight or less, particularly 0.01 to 2 with respect to 100 parts by weight of the alkali-soluble resin.
It is preferably part by weight.

Further, the radiation-sensitive resin composition of the present invention may contain an adhesion aid as an additive in order to improve the adhesiveness to the substrate. As such an adhesion aid, a functional silane coupling agent can be preferably used. Here, the functional silane coupling agent means a silane compound having a reactive substituent such as a carboxyl group, a methacryloyl group, an isocyanate group, and an epoxy group, and specific examples thereof include trimethoxysilylbenzoic acid and γ. -Methacryloxypropyltrimethoxysilane, vinyltriacetoxysilane, vinyltrimethoxysilane, γ-isocyanatopropyltriethoxysilane, γ-glycidoxypropyltrimethoxysilane, β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane Etc. can be mentioned. The amount of the adhesion aid used is preferably 20 parts by weight or less, particularly preferably 0.05 to 10 parts by weight, based on 100 parts by weight of the alkali-soluble resin.

<Preparation of Radiation-Sensitive Resin Composition and Composition Solution> The radiation-sensitive resin composition of the present invention comprises the above-mentioned components (A) and (B), and other components optionally contained therein. Can be prepared by uniformly mixing with each other. Usually, each component is dissolved in an organic solvent to prepare a composition solution. As the organic solvent here,
Any component may be used as long as it dissolves the component (A), the component (B) and other components that are contained as necessary and does not react with these components.

Specific examples of such an organic solvent include polymerization used when an alkali-soluble resin as the component (A) is obtained by polymerizing the above-mentioned monomers (a) to (d). The compounds exemplified as the solvent can be mentioned.

Further, N-methylformamide, N, N
-Dimethylformamide, N-methylformanilide,
N-methylacetamide, N, N-dimethylacetamide, N-methylpyrrolidone, dimethylsulfoxide, benzyl ethyl ether, dihexyl ether, acetonyl acetone, isophorone, caproic acid, caprylic acid, 1
It is also possible to add a high boiling point solvent such as -octanol, 1-nonanol, benzyl alcohol, benzyl acetate, ethyl benzoate, diethyl oxalate, diethyl maleate, γ-butyrolactone, ethylene carbonate, propylene carbonate, phenyl cellosolve acetate.

Among these, glycol esters such as ethylene glycol dimethyl ether, ethylene glycol alkyl ether acetates such as ethyl cellosolve acetate, ethyl 2-hydroxypropynate, and 3
-Esters such as methyl methoxypropionate and ethyl 3-ethoxypropionate, and diethylene glycols such as diethylene glycol dimethyl ether can be preferably used in terms of solubility of each component and ease of forming a coating film. These organic solvents may be used alone or in 2
Combinations of more than one type can be used.

In the preparation of the composition solution, for example, a solution of an alkali-soluble resin, a solution of a 1,2-quinonediazide compound and other components are separately prepared, and these components are mixed with a predetermined amount just before use. You may mix in a ratio. The composition solution has, for example, a pore size of 0.2 μm.
It can also be used after being filtered using a Millipore filter or the like.

<Formation of Thin Film> By using the radiation-sensitive resin composition of the present invention, a thin film can be formed, for example, as follows. (1) The prepared composition solution is applied to the surface of the substrate and prebaked to remove the solvent to form a coating film of the radiation-sensitive resin composition. (2) Patterning is performed by irradiating the formed coating film with radiation through a mask having a predetermined pattern, and then performing development processing using a developing solution to remove the radiation irradiation portion.

In the above, the method of applying the composition solution is not particularly limited, and various methods such as a spray method, a roll coating method and a spin coating method can be adopted. The conditions for prebaking vary depending on the type of each component, the usage ratio, etc., but are usually at 60 to 110 ° C. for about 30 seconds to 15 minutes. As the developing solution used for the developing treatment, sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate,
Ammonia, ethylamine, n-propylamine, diethylamine, diethylaminoethanol, di-n-propylamine, triethylamine, methyldiethylamine, dimethylethanolamine, triethanolamine, tetramethylammonium hydroxide, tetraethylammonium hydroxide, pyrrole, piperidine, 1 , 8-diazabicyclo [5,4,0] -7-undecene, 1,5-diazabicyclo [4,3,0] -5-
An aqueous solution of an alkali such as nonane can be used.
Further, a water-soluble organic solvent such as methanol or ethanol or an aqueous solution obtained by adding an appropriate amount of a surfactant to the above-mentioned aqueous solution of alkalis, or various organic solvents capable of dissolving the composition of the present invention can be used as a developing solution. . Further, as a developing method, a puddle method, a dipping method, a rocking dipping method and the like can be used.

(3) After the development treatment, a rinse treatment is performed by washing with running water, followed by air-drying with, for example, compressed air or compressed nitrogen, and then, in order to improve the transparency of the thin film, the entire surface of the substrate is irradiated with, for example, ultraviolet rays. , And the hot plate,
Post bake is performed by a heating device such as an oven. The post-baking temperature condition here is, for example, 15
It is 0 to 250 ° C. In this way, the resolution is high,
It is possible to form a thin film excellent in various properties such as insulation, flatness, heat resistance, transparency and hardness.

The radiation used in the above steps (1) and (3) is, for example, g-line (wavelength 436 nm), i
Rays (wavelength 365 nm) and the like, far ultraviolet rays such as KrF excimer laser and the like, X-rays such as synchrotron radiation and charged particle rays such as electron beams, and among these, g rays and i rays are preferable. Can be mentioned.

The preferred embodiments of the radiation-sensitive resin composition of the present invention are as follows. (1) 5 to 50% by weight of (A) (a) a constituent component derived from an unsaturated carboxylic acid and / or an unsaturated carboxylic acid anhydride, and (b) a constituent component 10 derived from a radically polymerizable compound having an epoxy group. To 90% by weight, (c) the constituent component derived from other monoolefinic unsaturated compound 10
100 parts by weight of an alkali-soluble resin consisting of 70% by weight and (d) a component of 3 to 30% by weight derived from a conjugated diolefin unsaturated compound, and (B) a 1,2-quinonediazide compound of 5 to 100 parts by weight. A radiation-sensitive resin composition, characterized in that: is dissolved in an organic solvent. (2) 5 to 50% by weight of component (A) (a) derived from unsaturated carboxylic acid and / or unsaturated carboxylic acid anhydride, (b) component 10 derived from radically polymerizable compound having epoxy group To 90% by weight, (c) the constituent component derived from other monoolefinic unsaturated compound 10
100 parts by weight of an alkali-soluble resin consisting of 70% by weight and (d) a component of 3 to 30% by weight derived from a conjugated diolefin unsaturated compound, and (B) a 1,2-quinonediazide compound of 5 to 100 parts by weight. , (E) 5 to 30 parts by weight of an epoxy resin, and (F) 0.01 to 1 part by weight of a surfactant are dissolved in an organic solvent. (3) Component (A) (a) 5 to 50% by Weight of Component Derived from Unsaturated Carboxylic Acid and / or Unsaturated Carboxylic Anhydride, Component (b) Derived from Radical Polymerizable Compound Having Epoxy Group To 90% by weight, (c) the constituent component derived from other monoolefinic unsaturated compound 10
100 parts by weight of an alkali-soluble resin consisting of 70% by weight and (d) a component of 3 to 30% by weight derived from a conjugated diolefin unsaturated compound, and (B) a 1,2-quinonediazide compound of 5 to 100 parts by weight. , (C) 3 to 50 parts by weight of a heat-sensitive acid generating compound, (D) 0 to 50 parts by weight of a polymerizable compound having at least one ethylenically unsaturated double bond, and (E) an epoxy resin 5 to 30. Parts by weight, (F)
A radiation-sensitive resin composition comprising 0.01 to 1 part by weight of a surfactant dissolved in an organic solvent. (4) Further, according to the radiation-sensitive resin composition of the above (1) to (3), a thin film can be provided which is cured by applying the radiation-sensitive resin composition to an electronic component and irradiating with radiation. .

[0041]

EXAMPLES Examples of the present invention will be specifically described below, but the present invention is not limited thereto.

<< Synthesis of Alkali-Soluble Resin >><Synthesis Example 1> A flask equipped with a dry ice / methanol reflux condenser was used, and the inside of the flask was replaced with nitrogen, and then 2,2′-azobisiso was used as a polymerization initiator. 459.0 g of a propylene glycol methyl ether acetate solution in which 9.0 g of butyronitrile was dissolved was charged into the flask. Then, methacrylic acid 4 as a monomer (a)
5.0 g, 90.0 g of glycidyl methacrylate as the monomer (b), and 22.5 of styrene as the monomer (c).
g and 45.0 g of cyclohexyl methacrylate,
After charging 22.5 g of 1,3-butadiene as the monomer (d), the temperature of the solution was adjusted to 7 while gently stirring.
The temperature was raised to 0 ° C., this temperature was kept for 5 hours to copolymerize the monomers, and then the polymerization was terminated by heating at 80 ° C. for 1 hour to obtain an alkali-soluble resin. This alkali-soluble resin was dissolved in propylene glycol methyl ether acetate to a concentration of 25% by weight to prepare an alkali-soluble resin solution. In the above, the copolymerization ratio of each monomer in the obtained alkali-soluble resin,
The monomer (a) is 20% by weight, the monomer (b) is 40% by weight, the monomer (c) is 30% by weight, and the monomer (d) is 10% by weight.

<Synthesis Example 2> A flask equipped with a dry ice / methanol reflux condenser was used. After the inside of the flask was replaced with nitrogen, 9.0 g of 2,2'-azobisisobutyronitrile was used as a polymerization initiator. 459.0 g of a dissolved methyl 3-methoxypropionate solution was charged into the flask. Then, methacrylic acid 33.7 as the monomer (a)
5 g and glycidyl methacrylate 1 as the monomer (b)
01.25 g and styrene 11.2 as the monomer (c)
After charging 5 g and 56.25 g of benzyl methacrylate and 22.5 g of 1,3-butadiene as the monomer (d), the temperature of the solution was adjusted to 80 while gently stirring.
The temperature was raised to 0 ° C., the temperature was maintained for 5 hours to copolymerize the monomers, and then the polymerization was terminated by heating at 90 ° C. for 1 hour to obtain an alkali-soluble resin. This alkali-soluble resin was dissolved in methyl 3-methoxypropionate to a concentration of 25% by weight to prepare an alkali-soluble resin solution. In the above, the copolymerization ratio of each monomer in the obtained alkali-soluble resin is such that the monomer (a) is 1
5% by weight, 45% by weight of the monomer (b), 30% by weight of the monomer (c) and 10% by weight of the monomer (d).

<Synthesis Example 3> A flask equipped with a dry ice / methanol reflux condenser was used, and after the inside of the flask was replaced with nitrogen, 9.0 g of 2,2'-azobisisobutyronitrile was used as a polymerization initiator. 459.0 g of the dissolved ethylene glycol dimethyl ether solution was charged into the flask. Then, methacrylic acid 4 as a monomer (a)
9.5 g, glycidyl methacrylate 90.0 g as the monomer (b), and styrene 12.3 as the monomer (b).
After charging 7 g and 56.25 g of α-methylstyrene and 16.88 g of 1,3-butadiene as the monomer (d), the temperature of the solution was set to 80 ° C. with gentle stirring.
And the temperature was maintained for 5 hours to copolymerize the monomers, and then the polymerization was terminated by heating at 90 ° C. for 1 hour to obtain an alkali-soluble resin. This alkali-soluble resin was dissolved in ethylene glycol dimethyl ether to a concentration of 25% by weight to prepare an alkali-soluble resin solution. In the above, the copolymerization ratio of each monomer in the obtained alkali-soluble resin is such that the monomer (a) is 22% by weight, the monomer (b) is 40% by weight, and the monomer (c) is
Is 30.5% by weight and the monomer (d) is 7.5% by weight.

<Synthesis Example 4> A flask equipped with a dry ice / methanol reflux condenser was used. After the inside of the flask was replaced with nitrogen, 9.0 g of 2,2'-azobisisobutyronitrile was used as a polymerization initiator. 459.0 g of the dissolved diethylene glycol dimethyl ether solution was charged into the flask. Next, maleic anhydride 45.0 g as the monomer (a), glycidyl methacrylate 67.5 g as the monomer (b), and styrene 22.g as the monomer (c).
5 g and dicyclopentanyl methacrylate 67.5
g and 1,2.5-butadiene 22.5 g were charged, the temperature of the solution was raised to 80 ° C. with gentle stirring, and this temperature was maintained for 5 hours to copolymerize the monomers, and thereafter, The polymerization was terminated by heating at 90 ° C. for 1 hour to obtain an alkali-soluble resin. This alkali-soluble resin was dissolved in diethylene glycol dimethyl ether to a concentration of 25% by weight to prepare an alkali-soluble resin solution. In the above, the copolymerization ratio of each monomer in the obtained alkali-soluble resin is such that the monomer (a) is 20
% By weight, 30% by weight of monomer (b), 4 by weight of monomer (c)
0% by weight and 10% by weight of the monomer (d).

<Synthesis Example 5> A flask equipped with a dry ice / methanol reflux condenser was used, and after the inside of the flask was replaced with nitrogen, 9.0 g of 2,2'-azobisisobutyronitrile was used as a polymerization initiator. 459.0 g of a dissolved ethyl 2-hydroxypropionate solution was charged into the flask. Then, as the monomer (a), methacrylic acid 45.
0 g, 90.0 g of methacrylic acid-6,7-epoxyheptylglycidyl as the monomer (b), and the monomer (c)
As p-methoxystyrene 22.5 g and 2-methylcyclohexyl acrylate 56.25 g and 1,3-butadiene 11.25 g as the monomer (d), the temperature of the solution was raised to 80 ° C., This temperature is 5
The monomer was copolymerized by holding for a period of time, and then the polymerization was terminated by heating at 90 ° C. for 1 hour to obtain an alkali-soluble resin. This alkali-soluble resin was dissolved in ethyl 2-hydroxypropionate to a concentration of 25% by weight to prepare an alkali-soluble resin solution. In the above, the copolymerization ratio of each monomer in the obtained alkali-soluble resin is such that the monomer (a) is 20% by weight and the monomer (b) is
Is 40% by weight, the monomer (c) is 35% by weight, and the monomer (d) is 5% by weight.

Comparative Synthesis Example 1 A copolymer for comparison was prepared in the same manner as in Synthesis Example 1 except that the monomer (d) 1,3-butadiene was not used. Was prepared.

<Comparative Synthesis Example 2> In Synthesis Example 1, the charged amount of the monomer (d) 1,3-butadiene was 2.0.
A copolymer was obtained and a copolymer solution was prepared in the same manner except that the amount was changed to g. The copolymerization ratio of each monomer in this copolymer is such that the monomer (a) is 22% by weight, the monomer (b) is 44% by weight, the monomer (c) is 33% by weight, and Body (d) is 1% by weight.

<Comparative Synthesis Example 3> In Synthesis Example 1, the charged amount of the monomer (d) 1,3-butadiene was 100.
A copolymer was obtained and a copolymer solution was prepared in the same manner except that the amount was changed to g. The copolymerization ratio of each monomer in this copolymer is such that the monomer (a) is 15% by weight, the monomer (b) is 30% by weight, the monomer (c) is 22% by weight, and Body (d) is 33% by weight.

<Example 1> [Preparation of composition solution] 100 g of the alkali-soluble resin solution (25 g of alkali-soluble resin) obtained in Synthesis Example 1 was added to 2 parts.
After diluting with 13.64 g of ethyl hydroxypropionate, 1,1,3-tris (2,5-dimethyl-4-hydroxyphenyl) -3-as the component (B) was added to this solution.
Phenylpropane-1,2-naphthoquinonediazide-5
-4.0 g of sulfonic acid ester and "Epicoat 152 (produced by Yuka Shell Epoxy Co., Ltd.)" as the component (E)
2.5 g and 1.25 g of γ-glycidoxypropyltrimethoxysilane as an adhesion aid were dissolved to give a pore size of 0.
A composition solution 1 was obtained by filtering with a 22 μm Millipore filter.

[Formation of coating film] The composition solution 1 was applied onto a silicon substrate using a spinner, and then prebaked at 80 ° C. for 5 minutes on a hot plate to form a coating film having a thickness of 2.0 μm. .

[Radiation Irradiation Treatment and Development Treatment] The obtained coating film is passed through a mask having a predetermined pattern to give a film having a thickness of 365 nm.
Ultraviolet light having a light intensity of 10 mW / cm ² was irradiated in the air for 20 seconds. Next, after developing with a 0.14 wt% aqueous solution of tetramethylammonium hydroxide at 25 ° C. for 1 minute, rinsing with ultrapure water was performed for 1 minute. As a result, a positive cured film could be formed with a resolution of 4.0 μm × 4.0 μm. After that, the light intensity at 365 nm is 10 mW / cm on the entire surface.
^The ultraviolet rays of ² were irradiated in the air for 30 seconds.

[Post-baking] The silicon substrate on which the cured film was formed was heated on a hot plate at 170 ° C. for 10 minutes to post-bake the cured film to obtain a silicon substrate on which the heat-cured film was formed. .

[Evaluation of Heat Resistance] The silicon substrate on which the heat-cured film was formed was heated in an oven at 200 ° C. for 1 hour, and then the thickness of the heat-cured film was measured. Then, the residual film ratio with respect to the film thickness of the heat-cured film after the post-baking was measured.
The case where the residual film ratio was less than 90% was evaluated as Δ when it was in the range of 95%. The results are shown in Table 1.

[Evaluation of Flatness] A thermosetting film was formed in the same manner as described above except that a silicon oxide film substrate having a step of 1.0 μm was used instead of the silicon substrate, and a contact-type film thickness was formed. The level difference of the heat-cured film was measured using a measuring device. The results are shown in Table 1.

[Evaluation of Transparency] Instead of a silicon substrate, a glass substrate “Corning 7059 (manufactured by Corning)”
A glass substrate on which a heat-cured film was formed was obtained in the same manner as above except that the above was used. Then, the transmittance of the obtained glass substrate was measured at a wavelength of 400 to 800 nm using a spectrophotometer "150-20 type double beam (manufactured by Hitachi, Ltd.)". At this time, the case where the minimum transmittance is more than 90% is marked with ◯, the case where it is in the range of 85 to 90% is marked with Δ, and the case where it is less than 90% is marked with x. The results are shown in Table 1.

[Evaluation of Heat Discoloration Resistance] A glass substrate on which a heat-cured film was formed was heated in an oven at 200 ° C. for 1 hour, and then the transmittance of this glass substrate was measured by a spectrophotometer “150-2.
Measurement was carried out at a wavelength of 400 to 800 nm using a "0 type double beam" to determine the change in transmittance after the heat treatment.
When the rate of change was less than 5%, it was evaluated as ◯, when it was in the range of 5 to 10%, as Δ, and when it exceeded 10%. The results are shown in Table 1.
Shown in

Example 2 A composition solution 2 was prepared in the same manner as in Example 1 except that the alkali-soluble resin solution obtained in Synthesis Example 2 was used instead of the alkali-soluble resin solution obtained in Synthesis Example 1. Got Using this composition solution 2, tetramethylammonium hydroxide 1.0
When the same operation as in Example 1 was carried out except that a weight% aqueous solution was used, a positive type cured film could be formed with a resolution of 4.0 μm × 4.0 μm. Also,
The heat-cured film was evaluated in the same manner as in Example 1. The results are shown in Table 1.

Example 3 A composition solution 3 was prepared in the same manner as in Example 1 except that the alkali-soluble resin solution obtained in Synthesis Example 3 was used instead of the alkali-soluble resin solution obtained in Synthesis Example 1. Got The same operation as in Example 1 was carried out except that this composition solution 3 was used.
A positive type cured film could be formed with a resolution of m × 4.0 μm. The same evaluation as in Example 1 was performed on the heat-cured film. The results are shown in Table 1.

Example 4 Composition solution 4 was prepared in the same manner as in Example 1 except that the alkali-soluble resin solution obtained in Synthesis Example 4 was used instead of the alkali-soluble resin solution obtained in Synthesis Example 1. Got The same operation as in Example 1 was carried out except that this composition solution 4 was used.
A positive type cured film could be formed with a resolution of m × 4.0 μm. The same evaluation as in Example 1 was performed on the heat-cured film. The results are shown in Table 1.

Example 5 A composition solution 5 was prepared in the same manner as in Example 1 except that the alkali-soluble resin solution obtained in Synthesis Example 5 was used instead of the alkali-soluble resin solution obtained in Synthesis Example 1. Got The same operation as in Example 1 was carried out except that this composition solution 5 was used.
A positive type cured film could be formed with a resolution of m × 4.0 μm. The same evaluation as in Example 1 was performed on the heat-cured film. The results are shown in Table 1.

<Example 6> As the component (B), 1, 1,
Instead of 3-tris (2,5-dimethyl-4-hydroxyphenyl) -3-phenylpropane-1,2-naphthoquinonediazide-5-sulfonate, 2,3,3
A composition solution 6 was obtained in the same manner as in Example 1 except that 4-trihydroxybenzophenone-1,2-naphthoquinonediazide-5-sulfonic acid ester was used. The procedure of Example 1 was repeated except that this composition solution 6 was used and a 0.1% by weight aqueous solution of tetramethylammonium hydroxide was used as a developing solution.
A positive type cured film could be formed with a resolution of 4.0 μm. The same evaluation as in Example 1 was performed on the heat-cured film. The results are shown in Table 1.

<Example 7> A composition solution 7 was obtained in the same manner as in Example 1 except that "Epolite 100MF (manufactured by Kyoeisha Oil & Fat Co., Ltd.)" was used as the epoxy resin instead of "Epicoat 828". It was Using this composition solution 7, the same operation as in Example 1 was carried out except that a 0.08% by weight aqueous solution of tetramethylammonium hydroxide was used as a developing solution. As a result, the size was 4.0 μm × 4.0 μm. It was possible to form a positive type cured film with a resolution of. The same evaluation as in Example 1 was performed on the heat-cured film. The results are shown in Table 1.

<Example 8> As the component (B), 1, 1,
Instead of 4.0 g of 3-tris (2,5-dimethyl-4-hydroxyphenyl) -3-phenylpropane-1,2-naphthoquinonediazide-5-sulfonic acid ester,
2.0 g of 1,1,3-tris (2,5-dimethyl-4-hydroxyphenyl) -3-phenylpropane-1,2-naphthoquinonediazide-5-sulfonate and 2,3,4-trihydroxy Benzophenone-1,
A composition solution 8 was obtained in the same manner as in Example 1 except that 2.0 g of 2-naphthoquinonediazide-5-sulfonate was used. The same operation as in Example 1 was carried out except that this composition solution 8 was used, and the result was 4.0 μm ×
A positive type cured film could be formed with a resolution of 4.0 μm. The same evaluation as in Example 1 was performed on the heat-cured film. The results are shown in Table 1.

<Examples 9 to 16> In Examples 1 to 8, 0.00625 g of "SH-28PA (manufactured by Toray Silicone Co., Ltd.)" was added as the component (F) to prepare composition solutions 9 to composition solutions. When the same operation was performed except that 16 was prepared, a positive type cured film could be formed with a resolution of 4.0 μm × 4.0 μm. The same evaluation as in Example 1 was performed on the heat-cured film. The results are shown in Table 1.

<Examples 17 and 18> In Example 1,
A composition solution 17 was obtained in the same manner as in Example 1 except that 0.25 g of "Sandade SI-L80 (manufactured by Sanshin Chemical Industry Co., Ltd.)" was further added as the component (C). In Example 1, as the component (D), “Aronix M-405
A composition solution 18 was obtained in the same manner as in Example 1 except that 2.5 g of "Toagosei Kagaku Kogyo Co., Ltd." was further added. The composition solution 17 and the composition solution 18 were used. Other than that, the same operation as in Example 1 was performed,
A positive type cured film could be formed with a resolution of 4.0 μm × 4.0 μm. The same evaluation as in Example 1 was performed on the heat-cured film. The results are shown in Table 1.
Shown in

Comparative Examples 1 to 3 The same as Example 1 except that the copolymer solution obtained in Comparative Synthesis Examples 1 to 3 was used in place of the alkali-soluble resin solution obtained in Synthesis Example 1. To obtain comparative composition solutions 19 to 21, respectively. Comparative Example 1 is an example in which an alkali-soluble resin containing no constituent component derived from the monomer (d) was used, and Comparative Example 2
Is an example using an alkali-soluble resin in which the constituent component derived from the monomer (d) is less than 3% by weight, and Comparative Example 3
Is an example using an alkali-soluble resin in which the constituent component derived from the monomer (d) exceeds 30% by weight. The same operation and evaluation as in Example 1 were carried out except that these composition solutions 19 to 21 were used. The results are shown in Table 1.

[0068]

[Table 1]

[0069]

According to the radiation-sensitive resin composition of the present invention, the resolution is high, and the insulating property, flatness, heat resistance, and
A patterned thin film excellent in various properties such as transparency can be easily formed.

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁶ Identification number Reference number within the agency FI Technical display location H01L 21/312 H01L 21/312 D (72) Inventor Nobuo Nobuo Bessho 2-11, Tsukiji, Chuo-ku, Tokyo No. 24 within Japan Synthetic Rubber Co., Ltd.

Claims (1)

[Claims] 1. (A) (a) unsaturated carboxylic acid and /
Or the constituent components 5 derived from unsaturated carboxylic acid anhydrides
50% by weight, (b) 10 to 90% by weight of a component derived from a radically polymerizable compound having an epoxy group, (c) 10 to 70% by weight of a component derived from another monoolefinic unsaturated compound, and ( d) 100 parts by weight of an alkali-soluble resin composed of 3 to 30% by weight of a constituent component derived from a conjugated diolefin unsaturated compound, and (B) 1,2-
A radiation-sensitive resin composition comprising 5 to 100 parts by weight of a quinonediazide compound.