JP2002169158A5 - - Google Patents
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- Publication number
- JP2002169158A5 JP2002169158A5 JP2000368933A JP2000368933A JP2002169158A5 JP 2002169158 A5 JP2002169158 A5 JP 2002169158A5 JP 2000368933 A JP2000368933 A JP 2000368933A JP 2000368933 A JP2000368933 A JP 2000368933A JP 2002169158 A5 JP2002169158 A5 JP 2002169158A5
- Authority
- JP
- Japan
- Prior art keywords
- liquid crystal
- degrees
- sealing material
- wiring
- crystal device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000368933A JP3858589B2 (ja) | 2000-12-04 | 2000-12-04 | 液晶装置及び電子機器 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000368933A JP3858589B2 (ja) | 2000-12-04 | 2000-12-04 | 液晶装置及び電子機器 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2002169158A JP2002169158A (ja) | 2002-06-14 |
JP2002169158A5 true JP2002169158A5 (cs) | 2004-12-24 |
JP3858589B2 JP3858589B2 (ja) | 2006-12-13 |
Family
ID=18839054
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2000368933A Expired - Fee Related JP3858589B2 (ja) | 2000-12-04 | 2000-12-04 | 液晶装置及び電子機器 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3858589B2 (cs) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4723213B2 (ja) * | 2003-08-29 | 2011-07-13 | 株式会社半導体エネルギー研究所 | 発光素子の作製方法 |
US7291967B2 (en) | 2003-08-29 | 2007-11-06 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting element including a barrier layer and a manufacturing method thereof |
US7902747B2 (en) | 2003-10-21 | 2011-03-08 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device having a thin insulating film made of nitrogen and silicon and an electrode made of conductive transparent oxide and silicon dioxide |
JP5945467B2 (ja) * | 2012-07-11 | 2016-07-05 | スタンレー電気株式会社 | 液晶表示装置 |
-
2000
- 2000-12-04 JP JP2000368933A patent/JP3858589B2/ja not_active Expired - Fee Related
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