JP2002167433A - Polyimide and method for producing the same - Google Patents

Polyimide and method for producing the same

Info

Publication number
JP2002167433A
JP2002167433A JP2000365806A JP2000365806A JP2002167433A JP 2002167433 A JP2002167433 A JP 2002167433A JP 2000365806 A JP2000365806 A JP 2000365806A JP 2000365806 A JP2000365806 A JP 2000365806A JP 2002167433 A JP2002167433 A JP 2002167433A
Authority
JP
Japan
Prior art keywords
polyimide
polyimide precursor
bis
mol
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2000365806A
Other languages
Japanese (ja)
Other versions
JP3934335B2 (en
Inventor
Masatoshi Hasegawa
匡俊 長谷川
Kazuhiko Maeda
一彦 前田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Central Glass Co Ltd
Original Assignee
Central Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Central Glass Co Ltd filed Critical Central Glass Co Ltd
Priority to JP2000365806A priority Critical patent/JP3934335B2/en
Publication of JP2002167433A publication Critical patent/JP2002167433A/en
Application granted granted Critical
Publication of JP3934335B2 publication Critical patent/JP3934335B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)

Abstract

PROBLEM TO BE SOLVED: To obtain a polyimide with low dielectric constant, low linear thermal expansion coefficient, high solder heat resistance and enough toughness and a precursor thereof. SOLUTION: The polyimide precursor is obtained by comprising a recurring unit represented by formula (1) of (x) molar fraction [x is 0<x<1] and a unit represented by formula (2) of (y) molar fraction [y is 0<y<1] and having 0<x+y<=1. The polyimide is obtained by the dehydration of the precursor.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【従来の技術】一般にポリイミドは、無水ピロメリット
酸などの芳香族テトラカルボン酸二無水物とジアミノジ
フェニルエーテル等の芳香族ジアミンとをジメチルアセ
トアミド等の非プロトン性極性溶媒中で等モル反応させ
容易に得られる高重合度のポリイミド前駆体を、膜など
に成形し加熱硬化して得られる。このような全芳香族ポ
リイミドは優れた耐熱性、耐薬品性、耐放射線性、電気
絶縁性、機械的性質などの性質を併せ持つことから、フ
レキシブルプリント配線回路用基板、テープオートメー
ションボンディング用基材、半導体素子の保護膜、集積
回路の層間絶縁膜等、様々な電子デバイスに現在広く利
用されている。
2. Description of the Related Art In general, polyimide is easily reacted by equimolar reaction between an aromatic tetracarboxylic dianhydride such as pyromellitic anhydride and an aromatic diamine such as diaminodiphenyl ether in an aprotic polar solvent such as dimethylacetamide. The obtained polyimide precursor having a high degree of polymerization is formed into a film or the like and cured by heating. Such a wholly aromatic polyimide has excellent properties such as excellent heat resistance, chemical resistance, radiation resistance, electrical insulation, and mechanical properties. Currently, it is widely used for various electronic devices such as a protective film of a semiconductor element and an interlayer insulating film of an integrated circuit.

【0002】最近では特にマイクロプロセッサーの演算
速度の高速化やクロック信号の立ち上がり時間の短縮化
が情報処理・通信分野で重要な課題になってきている
が、そのためには層間絶縁膜として使用するポリイミド
膜の誘電率を下げることが必要となる。
In recent years, in particular, increasing the operation speed of a microprocessor and shortening the rise time of a clock signal have become important issues in the field of information processing and communication. For this purpose, polyimide used as an interlayer insulating film has been used. It is necessary to lower the dielectric constant of the film.

【0003】ポリイミドの誘電率を下げるためにはポリ
イミド構造中にフッ素基を導入すること(Macromolecul
es, 24, 5001 (1991))や、芳香族単位を脂環族単位に
置き換えてπ電子を減少することにより、分子内共役お
よび電荷移動錯体形成を妨害すること(Macromolecule
s, 32, 4933 (1999))が提案されている。
In order to lower the dielectric constant of polyimide, a fluorine group is introduced into the polyimide structure (Macromolecule).
es, 24, 5001 (1991)), or by replacing aromatic units with alicyclic units to reduce π electrons, thereby preventing intramolecular conjugation and charge transfer complex formation (Macromolecule).
s, 32, 4933 (1999)).

【0004】一方、ポリイミド膜を層間絶縁膜として銅
などの金属基板と積層する場合、それぞれの線熱膨張係
数のミスマッチにより残留応力が発生し、カーリング、
膜の剥離、割れ等の重大な問題を引き起こすことが知ら
れている。この問題を回避するためにはポリイミド膜の
線熱膨張係数を金属基板のそれに近づけること即ちポリ
イミドの低熱膨張化が必要となる。現在知られているポ
リイミドの殆どは40〜80ppm/Kの線熱膨張係数を持ち、
銅板の18ppm/Kに比べてはるかに高い。最近では電子回
路の高密度化に伴い、配線基板の多層化の必要性が高ま
ってきているが、多層基板における残留応力はデバイス
の信頼性を著しく低下させる。
On the other hand, when a polyimide film is laminated on a metal substrate such as copper as an interlayer insulating film, residual stress is generated due to a mismatch between respective linear thermal expansion coefficients, and curling,
It is known to cause serious problems such as peeling and cracking of the film. In order to avoid this problem, it is necessary to make the linear thermal expansion coefficient of the polyimide film close to that of the metal substrate, that is, to reduce the thermal expansion of the polyimide film. Most currently known polyimides have a linear thermal expansion coefficient of 40 to 80 ppm / K,
It is much higher than 18ppm / K of copper plate. Recently, with the increase in the density of electronic circuits, the necessity of multi-layer wiring boards has been increasing. However, the residual stress in the multi-layer boards significantly reduces the reliability of devices.

【0005】ポリイミドの低熱膨張発現には一般に、主
鎖構造が直線的で内部回転が束縛されていることが必要
条件であることが知られている(Polymer, 28, 2282 (1
987))。現在実用的な低熱膨張ポリイミド材料としては
3,3',4,4'-ビフェニルテトラカルボン酸二無水物とパラ
フェニレンジアミンから形成されるポリイミドが知られ
ている。
[0005] It is known that in order to develop low thermal expansion of polyimide, it is generally necessary that the main chain structure is linear and internal rotation is restricted (Polymer, 28, 2282 (1)
987)). Currently practical low thermal expansion polyimide materials
Polyimides formed from 3,3 ', 4,4'-biphenyltetracarboxylic dianhydride and paraphenylenediamine are known.

【0006】しかしながら、低誘電率と低熱膨張係数を
同時に有し、かつハンダ耐熱性を保持しているポリイミ
ドを得ることは容易ではない。ポリイミド以外の低誘電
率芳香族高分子材料も検討されているが、熱膨張係数お
よび耐熱性の点で要求特性が十分に満たされていないの
が現状である。ポリイミド構造中へのフッ素基の導入は
分子間相互作用を弱め、低熱膨張化の要因であるイミド
化時の分子配向を妨げる傾向をもたらす。
[0006] However, it is not easy to obtain a polyimide having a low dielectric constant and a low coefficient of thermal expansion at the same time and maintaining solder heat resistance. Although low-permittivity aromatic polymer materials other than polyimide are also being studied, at present the required properties are not sufficiently satisfied in terms of thermal expansion coefficient and heat resistance. The introduction of a fluorine group into the polyimide structure weakens the intermolecular interaction, and tends to hinder the molecular orientation during imidization, which is a cause of low thermal expansion.

【0007】また脂環式構造単位の導入もポリイミド主
鎖の直線性を低下させ、熱膨張係数を増大を引き起こす
という問題がある。例えば4,4'-メチレンビス(シクロヘ
キシルアミン)のような屈曲性の高い脂環式ジアミンを
用いた場合、各種酸二無水物と容易に重合が進行し、高
重合度のポリアミド酸を生成するが、加熱により得られ
るポリイミド膜は非常に高い線熱膨張係数をもたらす。
The introduction of alicyclic structural units also has the problem that the linearity of the polyimide main chain is reduced and the coefficient of thermal expansion is increased. For example, when a highly flexible alicyclic diamine such as 4,4'-methylenebis (cyclohexylamine) is used, polymerization easily proceeds with various acid dianhydrides, and a polyamic acid having a high degree of polymerization is produced. The polyimide film obtained by heating has a very high coefficient of linear thermal expansion.

【0008】テトラカルボン酸成分として1,2,3,4-シク
ロブタンテトラカルボン酸二無水物21.51g、ジア
ミン成分としてp−フェニレンジアミン5.93gと4,
4'-ジアミノ-2,2'-ビス(トリフルオロメチル)ビフェニ
ル17.56gから得られる重合体が特開平8−361
83号公報に開示されている。
As a tetracarboxylic acid component, 21,51 g of 1,2,3,4-cyclobutanetetracarboxylic dianhydride, and as a diamine component, 5.93 g of p-phenylenediamine and 4,
A polymer obtained from 17.56 g of 4'-diamino-2,2'-bis (trifluoromethyl) biphenyl was disclosed in JP-A-8-361.
No. 83 is disclosed.

【0009】[0009]

【発明が解決しようとする課題】本発明は低誘電率、低
線熱膨張係数、充分高いハンダ耐熱性、および充分な強
靭さを併せ持つポリイミド、その前駆体及びその製造方
法を提供する。
SUMMARY OF THE INVENTION The present invention provides a polyimide having a low dielectric constant, a low coefficient of linear thermal expansion, a sufficiently high soldering heat resistance and a sufficient toughness, a precursor thereof, and a method for producing the same.

【0010】[0010]

【課題を解決するための手段】以上の問題を鑑み、鋭意
研究を積み重ねたところ、脂環式構造単位を有する比較
的直線的なトランス-1,4-ジアミノシクロヘキサンを直
線性の高いテトラカルボン酸誘導体と反応させることで
低誘電率かつ低線熱膨張率のポリイミドの得られること
が期待されたが、テトラカルボン酸誘導体として1,2,3,
4-シクロブタンテトラカルボン酸二無水物を使用すると
重合反応初期に強固な錯塩形成が起こり、重合反応が全
く進行しないとの知見を得たのでさらに検討を加えたと
ころ、テトラカルボン酸誘導体として1,2,3,4-シクロブ
タンテトラカルボン酸二無水物、ジアミンとして1,4-ジ
アミノシクロヘキサンおよび共重合成分として2,2'-ビ
ス(トリフルオロメチル)ベンジジンを含有した組成で重
合すると、上記の目的を達成できるポリイミドが得られ
ることを見い出し、本発明を完成するに至った。
Means for Solving the Problems In view of the above problems, intensive studies have been conducted to find that relatively linear trans-1,4-diaminocyclohexane having an alicyclic structural unit can be converted to a highly linear tetracarboxylic acid. It was expected that a polyimide having a low dielectric constant and a low coefficient of linear thermal expansion could be obtained by reacting with a derivative, but 1,2,3,
When 4-cyclobutanetetracarboxylic dianhydride was used, formation of a strong complex salt occurred at the beginning of the polymerization reaction, and it was found that the polymerization reaction did not proceed at all. When polymerized with a composition containing 2,3,4-cyclobutanetetracarboxylic dianhydride, 1,4-diaminocyclohexane as a diamine and 2,2′-bis (trifluoromethyl) benzidine as a copolymerization component, the above-mentioned purpose is obtained. It was found that a polyimide capable of achieving the above was obtained, and the present invention was completed.

【0011】すなわち、本発明は、下記式(1)で表さ
れる反復単位と下記式(2)で表される反復単位を有す
るポリイミド前駆体、
That is, the present invention provides a polyimide precursor having a repeating unit represented by the following formula (1) and a repeating unit represented by the following formula (2):

【0012】[0012]

【化5】 Embedded image

【0013】[0013]

【化6】 Embedded image

【0014】及び下記式(3)で表される反復単位と下
記式(4)で表される反復単位を有するポリイミドであ
る。
And a polyimide having a repeating unit represented by the following formula (3) and a repeating unit represented by the following formula (4).

【0015】[0015]

【化7】 Embedded image

【0016】[0016]

【化8】 Embedded image

【0017】また、本発明は、重合溶媒中で実質的に等
モルのジアミン成分とテトラカルボン酸成分を反応させ
るポリイミド前駆体の製造方法であって、溶媒中に少な
くとも1,2,3,4-シクロブタンテトラカルボン酸二無水物
を含むテトラカルボン酸成分1モルと2,2'-ビス(トリフ
ルオロメチル)ベンジジンxモル[xは、0<x<1を
表す。]を溶解・反応させる工程と、次いでそこへ1,4-
ジアミノシクロヘキサンyモル[yは、0<y<1を表
し、0<x+y≦1である。]を溶解し反応させる工程
を少なくとも有する前記ポリイミド前駆体の製造方法並
びにそのポリイミド前駆体を脱水することからなるポリ
イミドの製造方法である。
The present invention also relates to a process for producing a polyimide precursor, comprising reacting a substantially equimolar diamine component and a tetracarboxylic acid component in a polymerization solvent, wherein at least 1,2,3,4 1 mol of a tetracarboxylic acid component containing -cyclobutanetetracarboxylic dianhydride and x mol of 2,2'-bis (trifluoromethyl) benzidine [x represents 0 <x <1. Is dissolved and reacted, and then the 1,4-
Diaminocyclohexane y mol [y represents 0 <y <1, and 0 <x + y ≦ 1. And a method for producing a polyimide comprising dehydrating the polyimide precursor.

【0018】本発明のポリイミドを低熱膨張化するため
にはジアミン成分である1,4-ジアミノシクロヘキサンの
立体構造が化9に示すトランス型で2つのアミノ基が共
にエクアトリアル配置であることが特に望ましい。シス
型1,4-ジアミノシクロヘキサンの使用はその折れ曲がり
構造に起因して線熱膨張係数の低下に寄与しないことが
ある。
In order to reduce the thermal expansion of the polyimide of the present invention, it is particularly desirable that the diamine component 1,4-diaminocyclohexane has a steric structure of trans type shown in Chemical formula 9 and both amino groups have an equatorial configuration. . The use of cis 1,4-diaminocyclohexane may not contribute to a decrease in linear thermal expansion coefficient due to its bent structure.

【0019】[0019]

【化9】 Embedded image

【0020】またテトラカルボン酸成分の酸二無水物モ
ノマーである1,2,3,4-シクロブタンテトラカルボン酸二
無水物は化10に示すanti-型立体配置のものが特に望
ましい。syn-型1,2,3,4-シクロブタンテトラカルボン酸
二無水物の使用はその折れ曲がり構造に起因して線熱膨
張係数の低下に寄与しないことがある。
The 1,2,3,4-cyclobutanetetracarboxylic dianhydride, which is an acid dianhydride monomer of the tetracarboxylic acid component, is particularly preferably of the anti-configuration shown in Chemical formula 10. The use of syn-type 1,2,3,4-cyclobutanetetracarboxylic dianhydride may not contribute to a decrease in linear thermal expansion coefficient due to its bent structure.

【0021】[0021]

【化10】 Embedded image

【0022】[0022]

【発明の実施の形態】以下に本発明を詳細に説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail.

【0023】本発明のポリイミド前駆体は、式(1)で
表される反復単位をモル分率x[xは、0<x<1を表
す。]と、式(2)で表される反復単位をモル分率y
[yは、0<y<1を表す。]を含んでなる。ここでx
及びyは0<x+y≦1である。また、x≦y及び/ま
たはx+y=1であるのが好ましい。
In the polyimide precursor of the present invention, the repeating unit represented by the formula (1) contains a molar fraction x [x, where 0 <x <1. And the repeating unit represented by the formula (2)
[Y represents 0 <y <1. ]. Where x
And y are 0 <x + y ≦ 1. Further, it is preferable that x ≦ y and / or x + y = 1.

【0024】本発明のポリイミド前駆体は、式(1)及
び式(2)で表される反復単位と異なるアミド酸単位か
らなる反復単位を含むことができる。
The polyimide precursor of the present invention may contain a repeating unit composed of an amic acid unit different from the repeating units represented by the formulas (1) and (2).

【0025】その様な反復単位を構成する構造の由来す
るジアミンとしては、特に限定されないが、3,5−ジ
アミノベンゾトリフルオリド、2,5−ジアミノベンゾ
トリフルオリド、3,3’−ビストリフルオロメチル−
4,4’−ジアミノビフェニル、3,3’−ビストリフ
ルオロメチル−5,5’−ジアミノビフェニル、ビス
(トリフルオロメチル)−4,4’−ジアミノジフェニ
ル、ビス(フッ素化アルキル)−4,4’−ジアミノジ
フェニル、ジクロロ−4,4’−ジアミノジフェニル、
ジブロモ−4,4’−ジアミノジフェニル、ビス(フッ
素化アルコキシ)−4,4’−ジアミノジフェニル、ジ
フェニル−4,4’−ジアミノジフェニル、4,4’−
ビス(4−アミノテトラフルオロフェノキシ)テトラフ
ルオロベンゼン、4,4’−ビス(4−アミノテトラフ
ルオロフェノキシ)オクタフルオロビフェニル、4,
4’−ビナフチルアミン、o−、m−、p−フェニレン
ジアミン、2,4−ジアミノトルエン、2,5−ジアミ
ノトルエン、2,4−ジアミノキシレン、2,4−ジア
ミノジュレン、ジメチル−4,4’−ジアミノジフェニ
ル、ジアルキル−4,4’−ジアミノジフェニル、ジメ
トキシ−4,4’−ジアミノジフェニル、ジエトキシ−
4,4’−ジアミノジフェニル、4,4’−ジアミノジ
フェニルメタン、4,4’−ジアミノジフェニルエーテ
ル、3,4’−ジアミノジフェニルエーテル、4,4’
−ジアミノジフェニルスルフォン、3,3’−ジアミノ
ジフェニルスルフォン、4,4’−ジアミノベンゾフェ
ノン、3,3’−ジアミノベンゾフェノン、1,3−ビ
ス(3−アミノフェノキシ)ベンゼン、1,3−ビス
(4−アミノフェノキシ)ベンゼン、1,4−ビス(4
−アミノフェノキシ)ベンゼン、4,4’−ビス(4−
アミノフェノキシ)ビフェニル、ビス(4−(3−アミ
ノフェノキシ)フェニル)スルフォン、ビス(4−(4
−アミノフェノキシ)フェニル)スルフォン、2,2−
ビス(4−(4−アミノフェノキシ)フェニル)プロパ
ン、2,2−ビス(4−(4−アミノフェノキシ)フェ
ニル)ヘキサフルオロプロパン、2,2−ビス(4−
(3−アミノフェノキシ)フェニル)プロパン、2,2
−ビス(4−(3−アミノフェノキシ)フェニル)ヘキ
サフルオロプロパン、2,2−ビス(4−(4−アミノ
−2−トリフルオロメチルフェノキシ)フェニル)ヘキ
サフルオロプロパン、2,2−ビス(4−(3−アミノ
−5−トリフルオロメチルフェノキシ)フェニル)ヘキ
サフルオロプロパン、2,2−ビス(4−アミノフェニ
ル)ヘキサフルオロプロパン、2,2−ビス(3−アミ
ノフェニル)ヘキサフルオロプロパン、2,2−ビス
(3−アミノ−4−ヒドロキシフェニル)ヘキサフルオ
ロプロパン、2,2−ビス(3−アミノ−4−メチルフ
ェニル)ヘキサフルオロプロパン、4,4’−ビス(4
−アミノフェノキシ)オクタフルオロビフェニル、4,
4’−ジアミノベンズアニリド等が例示でき、これらを
2種以上併用することもできる。
The diamine derived from the structure constituting such a repeating unit is not particularly limited, but includes 3,5-diaminobenzotrifluoride, 2,5-diaminobenzotrifluoride, 3,3'-bistrifluoromethyl −
4,4'-diaminobiphenyl, 3,3'-bistrifluoromethyl-5,5'-diaminobiphenyl, bis (trifluoromethyl) -4,4'-diaminodiphenyl, bis (fluorinated alkyl) -4,4 '-Diaminodiphenyl, dichloro-4,4'-diaminodiphenyl,
Dibromo-4,4'-diaminodiphenyl, bis (fluorinated alkoxy) -4,4'-diaminodiphenyl, diphenyl-4,4'-diaminodiphenyl, 4,4'-
Bis (4-aminotetrafluorophenoxy) tetrafluorobenzene, 4,4′-bis (4-aminotetrafluorophenoxy) octafluorobiphenyl, 4,
4'-binaphthylamine, o-, m-, p-phenylenediamine, 2,4-diaminotoluene, 2,5-diaminotoluene, 2,4-diaminoxylene, 2,4-diaminodulene, dimethyl-4, 4'-diaminodiphenyl, dialkyl-4,4'-diaminodiphenyl, dimethoxy-4,4'-diaminodiphenyl, diethoxy-
4,4'-diaminodiphenyl, 4,4'-diaminodiphenylmethane, 4,4'-diaminodiphenylether, 3,4'-diaminodiphenylether, 4,4 '
-Diaminodiphenylsulfone, 3,3'-diaminodiphenylsulfone, 4,4'-diaminobenzophenone, 3,3'-diaminobenzophenone, 1,3-bis (3-aminophenoxy) benzene, 1,3-bis (4 -Aminophenoxy) benzene, 1,4-bis (4
-Aminophenoxy) benzene, 4,4'-bis (4-
Aminophenoxy) biphenyl, bis (4- (3-aminophenoxy) phenyl) sulfone, bis (4- (4
-Aminophenoxy) phenyl) sulfone, 2,2-
Bis (4- (4-aminophenoxy) phenyl) propane, 2,2-bis (4- (4-aminophenoxy) phenyl) hexafluoropropane, 2,2-bis (4-
(3-aminophenoxy) phenyl) propane, 2,2
-Bis (4- (3-aminophenoxy) phenyl) hexafluoropropane, 2,2-bis (4- (4-amino-2-trifluoromethylphenoxy) phenyl) hexafluoropropane, 2,2-bis (4 -(3-amino-5-trifluoromethylphenoxy) phenyl) hexafluoropropane, 2,2-bis (4-aminophenyl) hexafluoropropane, 2,2-bis (3-aminophenyl) hexafluoropropane, , 2-bis (3-amino-4-hydroxyphenyl) hexafluoropropane, 2,2-bis (3-amino-4-methylphenyl) hexafluoropropane, 4,4′-bis (4
-Aminophenoxy) octafluorobiphenyl, 4,
Examples thereof include 4'-diaminobenzanilide and the like, and two or more of these can be used in combination.

【0026】また、その様な反復単位を構成する構造の
由来するテトラカルボン酸としては、特に限定されない
が、例えば、ピロメリット酸、トリフルオロメチルベン
ゼンテトラカルボン酸、ビストリフルオロメチルベンゼ
ンテトラカルボン酸、ジフルオロベンゼンテトラカルボ
ン酸、ビフェニルテトラカルボン酸、ターフェニルテト
ラカルボン酸、ヘキサフルオロイソプロピリデンジフタ
ル酸、オキシジフタル酸、ビシクロ(2,2,2)オクト-7-エ
ン-2,3,5,6-テトラカルボン酸などが挙げられる。これ
らのテトラカルボン酸構造を有する反復単位の調製は、
テトラカルボン酸ニ無水物、テトラカルボン酸エステ
ル、テトラカルボン酸塩化物としてジアミンと混合する
ことで行える。
The tetracarboxylic acid derived from the structure constituting such a repeating unit is not particularly limited. Examples thereof include pyromellitic acid, trifluoromethylbenzenetetracarboxylic acid, bistrifluoromethylbenzenetetracarboxylic acid, Difluorobenzenetetracarboxylic acid, biphenyltetracarboxylic acid, terphenyltetracarboxylic acid, hexafluoroisopropylidene diphthalic acid, oxydiphthalic acid, bicyclo (2,2,2) oct-7-ene-2,3,5,6- And tetracarboxylic acid. The preparation of these repeating units having a tetracarboxylic acid structure is as follows:
It can be performed by mixing with tetraamine dianhydride, tetracarboxylic acid ester, and diamine as tetracarboxylic acid chloride.

【0027】本発明のポリイミド前駆体を製造する方法
は、特に限定されず、公知の方法を適用することもでき
る。通常、重合溶媒中で実質的に等モルのジアミン成分
とテトラカルボン酸成分を反応させることでポリイミド
前駆体を製造することができる。例えば、脂肪族ジアミ
ンを用いるポリイミド前駆体を合成する経路として、テ
トラカルボン酸のジアルキルエステルの酸塩化物と脂肪
族ジアミンよりポリアミド酸のアルキルエステルの合成
が一般に知られている(High Performance Polymer, 1
0, 11 (1998))。この方法では、重合初期に起こる強固
な錯塩を回避できるが、最終的に得られるポリイミド樹
脂中に痕跡量の塩素成分が残留し、金属基板等を浸食す
る恐れがある。
The method for producing the polyimide precursor of the present invention is not particularly limited, and a known method can be applied. Usually, a polyimide precursor can be produced by reacting substantially equimolar diamine components and tetracarboxylic acid components in a polymerization solvent. For example, as a route for synthesizing a polyimide precursor using an aliphatic diamine, synthesis of an alkyl ester of a polyamic acid from an acid chloride of a dialkyl ester of a tetracarboxylic acid and an aliphatic diamine is generally known (High Performance Polymer, 1
0, 11 (1998)). In this method, a strong complex salt occurring in the early stage of the polymerization can be avoided, but a trace amount of a chlorine component remains in the finally obtained polyimide resin, which may erode a metal substrate or the like.

【0028】また、脂肪族ジアミンを用いるポリイミド
前駆体を合成するもう1つの方法として、ジシリル化脂
肪族ジアミンと酸二無水物を反応させてポリアミド酸の
シリルエステルを合成する方法が知られている(高分子
討論会予稿集, 49, 1917 (2000))。この方法ではジシ
リル化脂肪族ジアミンを合成、単離の工程を必要とし、
工程が複雑化する。
As another method of synthesizing a polyimide precursor using an aliphatic diamine, there is known a method of synthesizing a silyl ester of a polyamic acid by reacting a disilylated aliphatic diamine with an acid dianhydride. (Preprints of the Symposium on Polymer Science, 49, 1917 (2000)). This method requires the steps of synthesizing and isolating the disilylated aliphatic diamine,
The process becomes complicated.

【0029】さらに、ポリアミド等の重合の際しばしば
添加される高分子溶解促進剤即ちリチウムブロマイドや
リチウムクロライドの如き金属塩類を添加することも知
られている。
It is also known to add a polymer dissolution accelerator often added during the polymerization of polyamide or the like, that is, a metal salt such as lithium bromide or lithium chloride.

【0030】以下に特に好ましい本発明のポリイミド前
駆体の製造方法を説明する。
A particularly preferred method for producing the polyimide precursor of the present invention will be described below.

【0031】まず、第一の工程では、重合溶媒中に少な
くとも1,2,3,4-シクロブタンテトラカルボン酸二無水物
を含むテトラカルボン酸成分1モルに対して2,2'-ビス
(トリフルオロメチル)ベンジジンxモル[xは、0<x
<1を表す。]を溶解・反応させる。ここで、xは1,2,
3,4-シクロブタンテトラカルボン酸二無水物のモル数以
上であるのが好ましい。テトラカルボン酸誘導体として
1,2,3,4-シクロブタンテトラカルボン酸二無水物以外の
ものを併用する際には前記したテトラカルボン酸誘導体
を使用することができる。前記したテトラカルボン酸誘
導体は0.5モル未満で使用する。第一工程では、ジア
ミン成分の一部のみを添加・反応させる。攪拌すること
で反応時間を短縮することができる。反応時間は1〜4
8時間程度である。反応温度は、0〜60℃程度であ
り、通常加熱、冷却を行わない雰囲気温度(室温)で行
うことができる。
First, in the first step, 2,2′-bis is added to 1 mol of a tetracarboxylic acid component containing at least 1,2,3,4-cyclobutanetetracarboxylic dianhydride in a polymerization solvent.
X mole of (trifluoromethyl) benzidine [x is 0 <x
<1. Is dissolved and reacted. Where x is 1,2,
It is preferably at least the number of moles of 3,4-cyclobutanetetracarboxylic dianhydride. As a tetracarboxylic acid derivative
When a compound other than 1,2,3,4-cyclobutanetetracarboxylic dianhydride is used in combination, the above-mentioned tetracarboxylic acid derivative can be used. The aforementioned tetracarboxylic acid derivative is used in less than 0.5 mol. In the first step, only a part of the diamine component is added and reacted. The reaction time can be shortened by stirring. Reaction time is 1-4
It is about 8 hours. The reaction temperature is about 0 to 60 ° C., and the reaction can be usually performed at an ambient temperature (room temperature) where heating and cooling are not performed.

【0032】重合溶媒としてはN,N-ジメチルホルムアミ
ド、N,N-ジメチルアセトアミド、N-メチル-2-ピロリド
ン、ジメチルスルホオキシド等の非プロトン性溶媒が好
ましいが、原料モノマーであるジアミンと酸二無水物が
溶解すればその構造には特に限定されない。具体的に例
示するならば、N−メチルピロリドン、スルホラン、m
−クレゾール、p−クレゾール、3−クロロフェノー
ル、4−クロロフェノール、γ−ブチロラクトン、γ−
バレロラクトン、δ−バレロラクトン、γ−カプロラク
トン、ε−カプロラクトン、α−メチル−γ−ブチロラ
クトン、エチレンカーボネート、プロピレンカーボネー
ト、トリエチレングリコール、アセトフェノン、1,3
−ジメチル−2−イミダゾリジノン、N,N−ジメチルホ
ルムアミド、N,N−ジメチルアセトアミド、ジメチル
スルホキシドなどが好ましく採用される。さらに、その
他の一般的な有機溶剤、即ちフェノール、o−クレゾー
ル、酢酸ブチル、酢酸エチル、エチルセロソルブ、ブチ
ルセロソルブ、2−メチルセロソルブアセテート、エチ
ルセロソルブアセテート、ブチルセロソルブアセテー
ト、酢酸エチル、酢酸ブチル、酢酸イソブチル、ジブチ
ルエーテル、ジエチレングリコールジメチルエーテル、
プロピレングリコールメチルアセテート、テトラヒドロ
フラン、ジメトキシエタン、ジエトキシエタン、メチル
イソブチルケトン、ジイソブチルケトン、シクロヘキサ
ノン、メチルエチルケトン、アセトン、ブタノール、エ
タノール、キシレン、トルエン、クロルベンゼン、ター
ペン、ミネラルスピリット、石油ナフサ系溶媒なども添
加して使用できる。
The polymerization solvent is preferably an aprotic solvent such as N, N-dimethylformamide, N, N-dimethylacetamide, N-methyl-2-pyrrolidone, dimethylsulfoxide, etc. The structure is not particularly limited as long as the anhydride is dissolved. Specific examples include N-methylpyrrolidone, sulfolane, m
-Cresol, p-cresol, 3-chlorophenol, 4-chlorophenol, γ-butyrolactone, γ-
Valerolactone, δ-valerolactone, γ-caprolactone, ε-caprolactone, α-methyl-γ-butyrolactone, ethylene carbonate, propylene carbonate, triethylene glycol, acetophenone, 1,3
-Dimethyl-2-imidazolidinone, N, N-dimethylformamide, N, N-dimethylacetamide, dimethylsulfoxide and the like are preferably employed. Further, other common organic solvents, i.e., phenol, o-cresol, butyl acetate, ethyl acetate, ethyl cellosolve, butyl cellosolve, 2-methyl cellosolve acetate, ethyl cellosolve acetate, butyl cellosolve acetate, ethyl acetate, butyl acetate, isobutyl acetate, Dibutyl ether, diethylene glycol dimethyl ether,
Propylene glycol methyl acetate, tetrahydrofuran, dimethoxyethane, diethoxyethane, methyl isobutyl ketone, diisobutyl ketone, cyclohexanone, methyl ethyl ketone, acetone, butanol, ethanol, xylene, toluene, chlorobenzene, terpen, mineral spirit, petroleum naphtha-based solvent, etc. Can be used.

【0033】第二の工程では、第一の工程に引き続き1,
4-ジアミノシクロヘキサンyモル[yは、0<y<1を
表し、0<x+y≦1である。]を溶解し反応させる。
1,4-ジアミノシクロヘキサンは粉末の状態で添加するこ
ともでき、その粉末は徐々に溶解していき、所定の時間
撹拌後、粘稠な均一溶液としてポリイミド前駆体溶液が
えられる。
In the second step, following the first step,
4-mol of diaminocyclohexane [y represents 0 <y <1, and 0 <x + y ≦ 1. Is dissolved and reacted.
1,4-Diaminocyclohexane can be added in the form of a powder, and the powder gradually dissolves. After stirring for a predetermined time, a polyimide precursor solution is obtained as a viscous uniform solution.

【0034】上記製造方法において、ジアミン成分とし
て1,4-ジアミノシクロヘキサン及び2,2'-ビス(トリフル
オロメチル)ベンジジン以外を併用する場合には、1,4-
ジアミノシクロヘキサンまたは2,2'-ビス(トリフルオロ
メチル)ベンジジンとともに、または別途添加すること
ができる。その使用量は0.5モル未満でとするの好ま
しい。反応時間は1〜48時間程度である。反応温度
は、0〜60℃程度であり、通常加熱、冷却を行わない
雰囲気温度(室温)で行うことができる。
In the above production method, when other than 1,4-diaminocyclohexane and 2,2′-bis (trifluoromethyl) benzidine are used in combination as the diamine component,
It can be added together with diaminocyclohexane or 2,2′-bis (trifluoromethyl) benzidine or separately. The amount used is preferably less than 0.5 mol. The reaction time is about 1 to 48 hours. The reaction temperature is about 0 to 60 ° C., and the reaction can be usually performed at an ambient temperature (room temperature) where heating and cooling are not performed.

【0035】本発明のポリイミド前駆体は、N,N-ジメチ
ルアセトアミド中、30℃で測定した固有粘度は0.01〜3.
0dL/g程度である。
The polyimide precursor of the present invention has an intrinsic viscosity in N, N-dimethylacetamide at 30 ° C. of 0.01 to 3.
It is about 0 dL / g.

【0036】本発明のポリイミド前駆体は、200℃〜400
℃、好ましくは300℃〜350℃の温度で熱処理してポリイ
ミドとすることができる。また熱処理に代えて無水酢酸
などの脱水試薬と反応させて化学的に行うこともでき
る。
The polyimide precursor of the present invention is used at a temperature of 200 ° C to 400 ° C.
C., preferably 300 to 350.degree. C. to give a polyimide. Alternatively, the reaction can be performed chemically by reacting with a dehydrating reagent such as acetic anhydride instead of heat treatment.

【0037】本発明のポリイミド前駆体は、前記重合溶
媒を溶媒とする溶液として物品の表面に被膜を形成する
ことができ、次いで上記熱処理または化学的脱水により
ポリイミド被膜を形成することができる。ポリイミド前
駆体溶液を塗布された後、予め50℃〜150℃範囲で乾燥
し、次いで200℃〜400℃、好ましくは300℃〜350℃の温
度で熱処理してポリイミド膜とすることができる。
The polyimide precursor of the present invention can form a film on the surface of an article as a solution using the polymerization solvent as a solvent, and then form a polyimide film by the above-mentioned heat treatment or chemical dehydration. After the polyimide precursor solution is applied, it is dried in advance at a temperature of 50 ° C to 150 ° C, and then heat-treated at a temperature of 200 ° C to 400 ° C, preferably 300 ° C to 350 ° C to form a polyimide film.

【0038】本発明のポリイミドは、必要に応じて酸化
安定剤、フィラー、シランカップリング剤、感光剤、光
重合開始剤および増感剤等の添加物を加えることができ
る。
The polyimide of the present invention can contain additives such as an oxidation stabilizer, a filler, a silane coupling agent, a photosensitizer, a photopolymerization initiator, and a sensitizer, if necessary.

【0039】[0039]

【実施例】以下に本発明を実施例により具体的に説明す
るが、これに限定されるものではない。
EXAMPLES The present invention will be described in more detail with reference to the following Examples, but it should not be construed that the invention is limited thereto.

【0040】(実施例1)反応容器中に2,2'-ビス(トリ
フルオロメチル)ベンジジン16.01g(0.05モル)を入
れ、N,N-ジメチルアセトアミド234gに溶解した後、1,2,
3,4-シクロブタンテトラカルボン酸二無水物粉末19.61g
(0.1モル)を加え室温で約2時間撹拌した。得られた
均一な溶液にトランス-1,4-ジアミノシクロヘキサン粉
末5.71g(0.05モル)を撹拌しながら徐々に加えた。24
時間後、透明で粘稠なポリイミド前駆体溶液を得た。N,
N-ジメチルアセトアミド中、30℃で測定した固有粘度は
1.0dL/gであった。この溶液をガラス基板に塗布し、60
℃、1時間で乾燥後、330℃、1時間で熱的にイミド化
を行い膜厚10μmの柔軟なポリイミド膜を得た。膜物性
は誘電率2.6(1MHz)、線熱膨張係数30ppm/K(100℃〜2
00℃の間の平均値)、およびガラス転移温度は370℃で
あった。合成したポリイミド前駆体およびその熱硬化膜
の赤外線吸収スペクトルを図1、図2にそれぞれ示す。
Example 1 16.1 g (0.05 mol) of 2,2'-bis (trifluoromethyl) benzidine was placed in a reaction vessel and dissolved in 234 g of N, N-dimethylacetamide.
19.61 g of 3,4-cyclobutanetetracarboxylic dianhydride powder
(0.1 mol) and stirred at room temperature for about 2 hours. 5.71 g (0.05 mol) of trans-1,4-diaminocyclohexane powder was gradually added to the obtained homogeneous solution while stirring. twenty four
After an hour, a clear, viscous polyimide precursor solution was obtained. N,
Intrinsic viscosity measured at 30 ° C in N-dimethylacetamide is
It was 1.0 dL / g. This solution is applied to a glass substrate and
After drying at 1 hour at 300 ° C., thermal imidization was performed at 330 ° C. for 1 hour to obtain a flexible polyimide film having a thickness of 10 μm. The physical properties of the film are a dielectric constant of 2.6 (1 MHz) and a linear thermal expansion coefficient of 30 ppm / K (100 ° C to 2 ° C).
Average value between 00 ° C), and the glass transition temperature was 370 ° C. FIGS. 1 and 2 show the infrared absorption spectra of the synthesized polyimide precursor and its thermosetting film, respectively.

【0041】(比較例1)反応容器中にパラフェニレン
ジアミン10.8g(0.1モル)を入れ、N,N-ジメチルアセト
アミド362gに溶解した後、撹拌しながら3,3',4,4'-ビフ
ェニルテトラカルボン酸二無水物の粉末29.4g(0.1モ
ル)を徐々に加えた。室温で3時間撹拌後、粘稠なポリ
イミド前駆体溶液が得られた。これより実施例1と同様
にして膜厚10μmのポリイミド膜を得た。膜物性は誘電
率3.2、線熱膨張係数6ppm/K、およびガラス転移温度360
℃であった。線熱膨張係数は非常に低いが、誘電率が高
いことがわかる。これは酸二無水物成分、ジアミン成分
共に芳香族モノマーを用いたことが原因である。
(Comparative Example 1) 10.8 g (0.1 mol) of paraphenylenediamine was placed in a reaction vessel, dissolved in 362 g of N, N-dimethylacetamide, and then stirred with 3,3 ', 4,4'-biphenyl. 29.4 g (0.1 mol) of tetracarboxylic dianhydride powder was gradually added. After stirring at room temperature for 3 hours, a viscous polyimide precursor solution was obtained. Thus, a polyimide film having a thickness of 10 μm was obtained in the same manner as in Example 1. The physical properties of the film are a dielectric constant of 3.2, a linear thermal expansion coefficient of 6 ppm / K, and a glass transition temperature of 360.
° C. It can be seen that the coefficient of linear thermal expansion is very low, but the dielectric constant is high. This is due to the use of aromatic monomers for both the acid dianhydride component and the diamine component.

【0042】(比較例2)反応容器中に4,4'-メチレン
ビス(シクロヘキシルアミン)21.04g(0.1モル)を入
れ、N,N-ジメチルアセトアミド230gに溶解した後、撹拌
しながら1,2,3,4-シクロブタンテトラカルボン酸二無水
物粉末19.61g(0.1モル)を加え室温で24時間撹拌し均
一な溶液を得た。この溶液をガラス基板に塗布し、60
℃、1時間で乾燥後、300℃、1時間で熱的にイミド化
を行い膜厚10μmの脆弱なポリイミド膜を得た。膜物性
は誘電率が2.6と低い値が得られたが、線熱膨張係数は6
0ppm/Kと高くなった。これは屈曲性の脂肪族ジアミンを
用いたことにより面内配向が疎外されたためである。
Comparative Example 2 21.04 g (0.1 mol) of 4,4'-methylenebis (cyclohexylamine) was placed in a reaction vessel, and dissolved in 230 g of N, N-dimethylacetamide. 19.61 g (0.1 mol) of 3,4-cyclobutanetetracarboxylic dianhydride powder was added and stirred at room temperature for 24 hours to obtain a uniform solution. This solution is applied to a glass substrate and
After drying for 1 hour at 300 ° C., thermal imidization was performed at 300 ° C. for 1 hour to obtain a brittle polyimide film having a thickness of 10 μm. As a film property, a low dielectric constant of 2.6 was obtained, but the coefficient of linear thermal expansion was 6
It was as high as 0 ppm / K. This is because the in-plane orientation was alienated by using the flexible aliphatic diamine.

【0043】(比較例3)反応容器中に2,2'-ビス(トリ
フルオロメチル)ベンジジン32.02g(0.1モル)を入れ、
N,N-ジメチルアセトアミド305gに溶解した後、撹拌しな
がらピロメリット酸二無水物粉末21.81g(0.1モル)を
加え室温で24時間撹拌し均一で粘稠な溶液を得た。この
溶液をガラス基板に塗布し、60℃、1時間で乾燥後、35
0℃、1時間で熱的にイミド化を行い膜厚10μmの柔軟な
ポリイミド膜を得た。膜物性は線熱膨張係数が3ppm/K
と極めて低い値が得られたが、誘電率は3.2と高くなっ
た。これは酸二無水物成分にピロメリット酸二無水物を
用いたことにより、分極率の高いイミドカルボニル基お
よびπ電子が増加したためである。
Comparative Example 3 32.02 g (0.1 mol) of 2,2′-bis (trifluoromethyl) benzidine was placed in a reaction vessel.
After dissolving in 305 g of N, N-dimethylacetamide, 21.81 g (0.1 mol) of pyromellitic dianhydride powder was added with stirring, followed by stirring at room temperature for 24 hours to obtain a uniform and viscous solution. This solution was applied to a glass substrate and dried at 60 ° C for 1 hour.
The polyimide was thermally imidized at 0 ° C. for 1 hour to obtain a flexible polyimide film having a thickness of 10 μm. The film has a linear thermal expansion coefficient of 3 ppm / K.
, But the dielectric constant was as high as 3.2. This is because the use of pyromellitic dianhydride as the acid dianhydride component increased the number of imide carbonyl groups having high polarizability and π electrons.

【0044】(比較例4)反応容器中に2,2'-ビス(トリ
フルオロメチル)ベンジジン32.02g(0.1モル)を入れ、
N,N-ジメチルアセトアミド433gに溶解した後、撹拌しな
がら2,2'-ビス(3,4-ジカルボキシフェニル)ヘキサフル
オロプロパン酸二無水物粉末44.42g(0.1モル)を加え
室温で24時間撹拌し均一で粘稠な溶液を得た。この溶液
をガラス基板に塗布し、60℃、1時間で乾燥後、350
℃、1時間で熱的にイミド化を行い膜厚10μmの柔軟な
ポリイミド膜を得た。膜物性は誘電率2.8と低い値が得
られたが、線熱膨張係数は60ppm/Kと高くなった。これ
は酸二無水物成分に直線性の低い2,2'-ビス(3,4-ジカル
ボキシフェニル)ヘキサフルオロプロパン酸二無水物を
用いたことにより、面内配向が疎外されたためである。
(Comparative Example 4) In a reaction vessel, 32.02 g (0.1 mol) of 2,2'-bis (trifluoromethyl) benzidine was added.
After dissolving in 433 g of N, N-dimethylacetamide, 44.42 g (0.1 mol) of 2,2'-bis (3,4-dicarboxyphenyl) hexafluoropropanoic acid dianhydride powder is added with stirring and added at room temperature for 24 hours. Stirring yielded a homogeneous, viscous solution. This solution was applied to a glass substrate, dried at 60 ° C for 1 hour,
The polyimide was thermally imidized at 1 ° C. for 1 hour to obtain a flexible polyimide film having a thickness of 10 μm. The physical properties of the film were as low as 2.8, but the coefficient of linear thermal expansion was as high as 60 ppm / K. This is because the in-plane orientation was alienated by using 2,2′-bis (3,4-dicarboxyphenyl) hexafluoropropanoic dianhydride having low linearity as the acid dianhydride component.

【0045】[0045]

【発明の効果】本発明のポリイミドは、高い耐熱性を有
するとともに、低誘電率と低線熱膨張係数を併せ有する
という効果を奏する。
The polyimide of the present invention has the effect of having high heat resistance and having both a low dielectric constant and a low coefficient of linear thermal expansion.

【図面の簡単な説明】[Brief description of the drawings]

【図1】実施例で得られたポリイミド前駆体の赤外線吸
収スペクトルである。
FIG. 1 is an infrared absorption spectrum of a polyimide precursor obtained in an example.

【図2】実施例で得られたポリイミドの赤外線吸収スペ
クトルである。
FIG. 2 is an infrared absorption spectrum of a polyimide obtained in an example.

フロントページの続き Fターム(参考) 4J043 PA04 PA19 PC015 PC016 PC135 PC136 PC145 PC146 QB15 QB26 QB31 RA35 SA06 SA42 SA43 SA52 SA53 SA54 SA55 SA56 SA71 SA72 SB02 SB03 TA22 TA47 TA66 TA67 TB01 TB02 UA022 UA041 UA062 UA121 UA122 UA131 UA132 UA141 UA142 UA151 UA261 UA632 UA662 UA672 UB011 UB021 UB061 UB062 UB121 UB122 UB131 UB151 UB221 UB301 UB401 UB402 VA011 VA021 VA031 VA041 VA051 VA061 VA071 VA081 VA091 XA15 XA16 XA17 XA19 XB02 XB37 YA06 YA08 ZA12 ZA31 ZA35 ZA43 ZA46 ZB11 ZB47 Continuation of the front page F term (reference) 4J043 PA04 PA19 PC015 PC016 PC135 PC136 PC145 PC146 QB15 QB26 QB31 RA35 SA06 SA42 SA43 SA52 SA53 SA54 SA55 SA56 SA71 SA72 SB02 SB03 TA22 TA47 TA66 TA67 TB01 TB02 UA022 UA041 UA062 UA121 UA122 UA 141 UA261 UA632 UA662 UA672 UB011 UB021 UB061 UB062 UB121 UB122 UB131 UB151 UB221 UB301 UB401 UB402 VA011 VA021 VA031 VA041 VA051 VA061 VA071 VA081 VA091 XA15 XA16 XA17 XA19 ZB06 ZB37 ZA37

Claims (9)

【特許請求の範囲】[Claims] 【請求項1】式(1)で表される反復単位をモル分率x
[xは、0<x<1を表す。]と、式(2)で表される
反復単位をモル分率y[yは、0<y<1を表す。]で
含んでなり、0<x+y≦1であるポリイミド前駆体。 【化1】 【化2】
(1) A repeating unit represented by the formula (1) is represented by a mole fraction x
[X represents 0 <x <1. ] And the repeating unit represented by the formula (2) in a molar fraction y [y represents 0 <y <1. And a polyimide precursor satisfying 0 <x + y ≦ 1. Embedded image Embedded image
【請求項2】x≦yである請求項1記載のポリイミド前
駆体。
2. The polyimide precursor according to claim 1, wherein x ≦ y.
【請求項3】x+y=1である請求項1または2に記載
のポリイミド前駆体。
3. The polyimide precursor according to claim 1, wherein x + y = 1.
【請求項4】式(3)で表される反復単位をモル分率x
[xは、0<x<1を表す。]と、式(4)で表される
反復単位をモル分率y[yは、0<y<1を表す。]で
含んでなり、0<x+y≦1であるポリイミド。 【化3】 【化4】
4. The repeating unit represented by the formula (3) is represented by a mole fraction x
[X represents 0 <x <1. ] And the molar unit y [y of the repeating unit represented by the formula (4) represents 0 <y <1. ], Wherein 0 <x + y ≦ 1. Embedded image Embedded image
【請求項5】x≦yである請求項4記載のポリイミド。5. The polyimide according to claim 4, wherein x ≦ y. 【請求項6】x+y=1である請求項4または5に記載
のポリイミド。
6. The polyimide according to claim 4, wherein x + y = 1.
【請求項7】重合溶媒中で実質的に等モルのジアミン成
分とテトラカルボン酸成分を反応させるポリイミド前駆
体の製造方法であって、溶媒中に少なくとも1,2,3,4-シ
クロブタンテトラカルボン酸二無水物を含むテトラカル
ボン酸成分1モルと2,2'-ビス(トリフルオロメチル)ベ
ンジジンxモル[xは、0<x<1を表す。]を溶解・
反応させる工程と、次いでそこへ1,4-ジアミノシクロヘ
キサンyモル[yは、0<y<1を表し、0<x+y≦
1である。]を溶解し反応させる工程を少なくとも有す
る請求項1記載のポリイミド前駆体の製造方法。
7. A process for producing a polyimide precursor, comprising reacting substantially equimolar amounts of a diamine component and a tetracarboxylic acid component in a polymerization solvent, wherein the solvent comprises at least 1,2,3,4-cyclobutanetetracarboxylic acid in the solvent. 1 mol of a tetracarboxylic acid component containing an acid dianhydride and x mol of 2,2′-bis (trifluoromethyl) benzidine [x represents 0 <x <1. ]
Reacting and then ymol 1,4-diaminocyclohexane [y represents 0 <y <1, 0 <x + y ≦
It is one. The method for producing a polyimide precursor according to claim 1, further comprising a step of dissolving and reacting the polyimide precursor.
【請求項8】重合溶媒中で実質的に等モルのジアミン成
分とテトラカルボン酸成分を反応させるポリイミド前駆
体の製造方法であって、溶媒中に1,2,3,4-シクロブタン
テトラカルボン酸二無水物1モルと2,2'-ビス(トリフル
オロメチル)ベンジジンxモル[xは、0<x<1を表
す。]を溶解・反応させ、次いでそこへ1,4-ジアミノシ
クロヘキサンyモル[yは、0<y<1を表し、x+y
=1である。]を溶解し反応させることからなる請求項
1記載のポリイミド前駆体の製造方法。
8. A method for producing a polyimide precursor, comprising reacting a diamine component and a tetracarboxylic acid component in substantially equimolar amounts in a polymerization solvent, wherein 1,2,3,4-cyclobutanetetracarboxylic acid is contained in the solvent. 1 mol of dianhydride and x mol of 2,2'-bis (trifluoromethyl) benzidine [x represents 0 <x <1. Is dissolved and reacted, and then ymol of 1,4-diaminocyclohexane [y represents 0 <y <1, x + y
= 1. The method for producing a polyimide precursor according to claim 1, comprising dissolving and reacting.
【請求項9】請求項1乃至3のいずれかに記載のポリイ
ミド前駆体を脱水することからなるポリイミドの製造方
法。 【0002】
9. A method for producing a polyimide, comprising dehydrating the polyimide precursor according to any one of claims 1 to 3. [0002]
JP2000365806A 2000-11-30 2000-11-30 Polyimide and method for producing the same Expired - Fee Related JP3934335B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000365806A JP3934335B2 (en) 2000-11-30 2000-11-30 Polyimide and method for producing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000365806A JP3934335B2 (en) 2000-11-30 2000-11-30 Polyimide and method for producing the same

Publications (2)

Publication Number Publication Date
JP2002167433A true JP2002167433A (en) 2002-06-11
JP3934335B2 JP3934335B2 (en) 2007-06-20

Family

ID=18836515

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000365806A Expired - Fee Related JP3934335B2 (en) 2000-11-30 2000-11-30 Polyimide and method for producing the same

Country Status (1)

Country Link
JP (1) JP3934335B2 (en)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002322274A (en) * 2001-04-26 2002-11-08 New Japan Chem Co Ltd Polyimide, polyimide precursor and method for producing them
WO2005047367A1 (en) * 2003-11-13 2005-05-26 Sony Chemicals Corp. Polyimide precursor, method for producing polyimide precursor, method for producing polyimide precursor solution in organic solvent, method for producing cast film, and method for producing polyimide film
JP2005146072A (en) * 2003-11-13 2005-06-09 Sony Chem Corp Polyimide precursor, method for producing the same, method for producing polyimide precursor organic solvent solution, method for producing cast film, and method for producing polyimide film
JP2005336243A (en) * 2004-05-25 2005-12-08 Nissan Chem Ind Ltd Highly transparent poly(amic acid-imide) copolymer and positive-type photosensitive resin composition containing the same, and cured film of the composition
JP2006071783A (en) * 2004-08-31 2006-03-16 Hitachi Chem Co Ltd Photosensitive resin composition and method for producing fine pattern using the same
JP2009286706A (en) * 2008-05-27 2009-12-10 Iwatani Industrial Gases Corp New (1r,2s,4s,5r)-cyclohexanetetracarboxylic acid dianhydride and utilization thereof
JP2010202729A (en) * 2009-03-02 2010-09-16 Hitachi Chemical Dupont Microsystems Ltd Polyimide precursor resin composition for flexible device substrates and method for producing flexible device using the same, and flexible device
WO2010113412A1 (en) * 2009-03-31 2010-10-07 三井化学株式会社 Low-thermal-expansion block polyimide, precursor thereof, and use thereof
JPWO2009107429A1 (en) * 2008-02-25 2011-06-30 日立化成デュポンマイクロシステムズ株式会社 Polyimide precursor composition, polyimide film and transparent flexible film
JP2012008524A (en) * 2010-02-26 2012-01-12 Canon Inc Optical member, polyimide, and method for manufacturing the same
JP2014139302A (en) * 2012-12-20 2014-07-31 Asahi Kasei E-Materials Corp Polyimide precursor and resin composition containing the same, polyimide film and its manufacturing method, laminate and its manufacturing method
WO2014174838A1 (en) * 2013-04-25 2014-10-30 三井化学株式会社 Block polyimide, block polyamide acid imide and use thereof
US8980401B2 (en) 2011-01-19 2015-03-17 Canon Kabushiki Kaisha Optical member and method of producing the same
JP2016204569A (en) * 2015-04-27 2016-12-08 宇部興産株式会社 Polyamic acid solution composition and polyimide film
JP2018028076A (en) * 2016-08-10 2018-02-22 新日鉄住金化学株式会社 Polyimide precursor and polyimide prepared from the same
JP2019006970A (en) * 2017-06-23 2019-01-17 台虹科技股▲分▼有限公司 Polyimide polymer and polyimide film

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109880091A (en) * 2019-02-26 2019-06-14 中国科学院化学研究所 A kind of semi-aromatic thermoset polyimide resin and preparation method thereof and purposes

Cited By (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002322274A (en) * 2001-04-26 2002-11-08 New Japan Chem Co Ltd Polyimide, polyimide precursor and method for producing them
WO2005047367A1 (en) * 2003-11-13 2005-05-26 Sony Chemicals Corp. Polyimide precursor, method for producing polyimide precursor, method for producing polyimide precursor solution in organic solvent, method for producing cast film, and method for producing polyimide film
JP2005146072A (en) * 2003-11-13 2005-06-09 Sony Chem Corp Polyimide precursor, method for producing the same, method for producing polyimide precursor organic solvent solution, method for producing cast film, and method for producing polyimide film
JP4538216B2 (en) * 2003-11-13 2010-09-08 ソニーケミカル&インフォメーションデバイス株式会社 A polyimide precursor, a polyimide precursor manufacturing method, a polyimide precursor organic solvent solution manufacturing method, a cast film manufacturing method, and a polyimide film manufacturing method.
JP2005336243A (en) * 2004-05-25 2005-12-08 Nissan Chem Ind Ltd Highly transparent poly(amic acid-imide) copolymer and positive-type photosensitive resin composition containing the same, and cured film of the composition
JP4678142B2 (en) * 2004-05-25 2011-04-27 日産化学工業株式会社 Photosensitive resin composition of poly (amic acid-imide) copolymer having high transparency and cured film thereof
JP2006071783A (en) * 2004-08-31 2006-03-16 Hitachi Chem Co Ltd Photosensitive resin composition and method for producing fine pattern using the same
JP5392247B2 (en) * 2008-02-25 2014-01-22 日立化成デュポンマイクロシステムズ株式会社 Polyimide precursor composition, polyimide film and transparent flexible film
JPWO2009107429A1 (en) * 2008-02-25 2011-06-30 日立化成デュポンマイクロシステムズ株式会社 Polyimide precursor composition, polyimide film and transparent flexible film
US8796411B2 (en) 2008-02-25 2014-08-05 Hitachi Chemical Dupont Microsystems, Ltd. Polyimide precursor composition, polyimide film, and transparent flexible film
JP2009286706A (en) * 2008-05-27 2009-12-10 Iwatani Industrial Gases Corp New (1r,2s,4s,5r)-cyclohexanetetracarboxylic acid dianhydride and utilization thereof
JP2010202729A (en) * 2009-03-02 2010-09-16 Hitachi Chemical Dupont Microsystems Ltd Polyimide precursor resin composition for flexible device substrates and method for producing flexible device using the same, and flexible device
WO2010113412A1 (en) * 2009-03-31 2010-10-07 三井化学株式会社 Low-thermal-expansion block polyimide, precursor thereof, and use thereof
TWI478958B (en) * 2009-03-31 2015-04-01 Mitsui Chemicals Inc Low thermal expansion property block polyimide and precursor thereof and use thereof
KR101317020B1 (en) * 2009-03-31 2013-10-11 미쓰이 가가쿠 가부시키가이샤 Low-thermal-expansion block polyimide, precursor thereof, and use thereof
CN102369233B (en) * 2009-03-31 2013-10-16 三井化学株式会社 Low-thermal-expansion block polyimide, precursor thereof, and use thereof
CN102369233A (en) * 2009-03-31 2012-03-07 三井化学株式会社 Low-thermal-expansion block polyimide, precursor thereof, and use thereof
US9339992B2 (en) 2009-03-31 2016-05-17 Mitsui Chemicals, Inc. Low-thermal-expansion block polyimide, precursor thereof, and use thereof
JPWO2010113412A1 (en) * 2009-03-31 2012-10-04 三井化学株式会社 Low thermal expansion block polyimide and its precursor and its use
JP5595381B2 (en) * 2009-03-31 2014-09-24 三井化学株式会社 Low thermal expansion block polyimide and its precursor and its use
US9145473B2 (en) 2010-02-26 2015-09-29 Canon Kabushiki Kaisha Optical member, polyimide, method for manufacturing optical member, and method for producing polyimide
JP2012008524A (en) * 2010-02-26 2012-01-12 Canon Inc Optical member, polyimide, and method for manufacturing the same
US8980401B2 (en) 2011-01-19 2015-03-17 Canon Kabushiki Kaisha Optical member and method of producing the same
JP2014139302A (en) * 2012-12-20 2014-07-31 Asahi Kasei E-Materials Corp Polyimide precursor and resin composition containing the same, polyimide film and its manufacturing method, laminate and its manufacturing method
WO2014174838A1 (en) * 2013-04-25 2014-10-30 三井化学株式会社 Block polyimide, block polyamide acid imide and use thereof
US10351673B2 (en) 2013-04-25 2019-07-16 Mitsui Chemicals, Inc. Block polyimide, block polyamide acid imide and use thereof
JP2016204569A (en) * 2015-04-27 2016-12-08 宇部興産株式会社 Polyamic acid solution composition and polyimide film
JP2018028076A (en) * 2016-08-10 2018-02-22 新日鉄住金化学株式会社 Polyimide precursor and polyimide prepared from the same
CN107722267A (en) * 2016-08-10 2018-02-23 新日铁住金化学株式会社 Polyimide precursor and the polyimides generated by the polyimide precursor
CN107722267B (en) * 2016-08-10 2022-05-31 日铁化学材料株式会社 Polyimide precursor and polyimide produced from the polyimide precursor
JP7079076B2 (en) 2016-08-10 2022-06-01 日鉄ケミカル&マテリアル株式会社 Polyimide precursor and the polyimide resulting from it
JP2019006970A (en) * 2017-06-23 2019-01-17 台虹科技股▲分▼有限公司 Polyimide polymer and polyimide film
US10246556B2 (en) 2017-06-23 2019-04-02 Taiflex Scientific Co., Ltd. Polyimide polymer and polyimide film

Also Published As

Publication number Publication date
JP3934335B2 (en) 2007-06-20

Similar Documents

Publication Publication Date Title
KR102074954B1 (en) Composition comprising polyimide copolymer and inorganic particles, method of preparing same, article including same, and display device including the article
JP3934335B2 (en) Polyimide and method for producing the same
JP6872081B2 (en) Polyamic acid resin, polyimide resin and resin composition containing these
KR101152574B1 (en) Aromatic polyamic acid and polyimide
JP3859984B2 (en) Polyimide and method for producing the same
JP2009518500A (en) Polyimide film
JP4699321B2 (en) Ester group-containing polyimide, precursor thereof, and production method thereof
KR20150025517A (en) Poly(amide-imide) copolymer, method of preparing poly(amide-imede) copolymer, and article including poly(amide-imide)copolymer
KR20070091223A (en) Fluorinated diamine and polymer made from the same
JP2009221309A (en) Tetracarboxylic acid containing phosphorus-containing ester group or its dianhydride and phosphorus-containing polyester imide
JP2009286854A (en) Polyesterimide precursor and polyesterimide
JP4627297B2 (en) Polyesterimide and its precursor with low linear thermal expansion coefficient
JP4614349B2 (en) Polyimide having alcoholic hydroxyl group and method for producing the same
JP3773445B2 (en) Fluorine-containing alicyclic diamine and polymer using the same
JPWO2005113647A6 (en) Polyesterimide and its precursor with low linear thermal expansion coefficient
JPH0214365B2 (en)
JP2003213130A (en) Polyimide resin composition and fire-resistant adhesive
TW201930257A (en) Dimer diamine composition, method for producing the same and resin film having high transparency and low degree of coloring while using dimer diamine
JPWO2019131896A1 (en) Polyimide, polyimide solution composition, polyimide film, and substrate
JP2008163090A (en) Tetracarboxylic acid dianhydride, method for producing the same and polymer
JP2002327060A (en) Polybenzoxazol and its production method
JP2003041189A (en) Varnish and cross-linkable polyimide
TWI478961B (en) Novel polyimidesilicone having alcoholic hydroxyl group and process for producing the same
KR20200082278A (en) Polyamic acid composition and transparent polyimide film using the same
JP2005272655A (en) Soluble polyimide

Legal Events

Date Code Title Description
A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20051129

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20051206

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060206

RD01 Notification of change of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7421

Effective date: 20060421

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20070313

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20070315

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100330

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100330

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110330

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110330

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120330

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120330

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120330

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130330

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130330

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130330

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140330

Year of fee payment: 7

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees