JP2002164430A - 集積デバイス用デュアルダマシン接触 - Google Patents

集積デバイス用デュアルダマシン接触

Info

Publication number
JP2002164430A
JP2002164430A JP2001262581A JP2001262581A JP2002164430A JP 2002164430 A JP2002164430 A JP 2002164430A JP 2001262581 A JP2001262581 A JP 2001262581A JP 2001262581 A JP2001262581 A JP 2001262581A JP 2002164430 A JP2002164430 A JP 2002164430A
Authority
JP
Japan
Prior art keywords
layer
level
conductive
conductor
opening
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2001262581A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002164430A5 (enrdf_load_stackoverflow
Inventor
Richardson O Adebanjo
オー アデバヨ リチャードソン
Winston Yan Iifen
ウィンストン ヤン イーフェン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Agere Systems LLC
Original Assignee
Agere Systems Guardian Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agere Systems Guardian Corp filed Critical Agere Systems Guardian Corp
Publication of JP2002164430A publication Critical patent/JP2002164430A/ja
Publication of JP2002164430A5 publication Critical patent/JP2002164430A5/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Layout of the interconnection structure
    • H01L23/5283—Cross-sectional geometry
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Geometry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2001262581A 2000-08-31 2001-08-31 集積デバイス用デュアルダマシン接触 Withdrawn JP2002164430A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US65244900A 2000-08-31 2000-08-31
US09/652449 2000-08-31

Publications (2)

Publication Number Publication Date
JP2002164430A true JP2002164430A (ja) 2002-06-07
JP2002164430A5 JP2002164430A5 (enrdf_load_stackoverflow) 2004-09-09

Family

ID=24616872

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001262581A Withdrawn JP2002164430A (ja) 2000-08-31 2001-08-31 集積デバイス用デュアルダマシン接触

Country Status (3)

Country Link
JP (1) JP2002164430A (enrdf_load_stackoverflow)
KR (1) KR20020018610A (enrdf_load_stackoverflow)
GB (1) GB2371146A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004312007A (ja) * 2003-04-03 2004-11-04 Samsung Electronics Co Ltd 金属−絶縁体−金属キャパシタを含む二重ダマシン配線構造及びその製造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7859112B2 (en) * 2006-01-13 2010-12-28 Micron Technology, Inc. Additional metal routing in semiconductor devices

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5693563A (en) * 1996-07-15 1997-12-02 Chartered Semiconductor Manufacturing Pte Ltd. Etch stop for copper damascene process
FR2754391B1 (fr) * 1996-10-08 1999-04-16 Sgs Thomson Microelectronics Structure de contact a facteur de forme eleve pour circuits integres
JP3228181B2 (ja) * 1997-05-12 2001-11-12 ヤマハ株式会社 平坦配線形成法
US6100190A (en) * 1998-02-19 2000-08-08 Rohm Co., Ltd. Method of fabricating semiconductor device, and semiconductor device
JP3293792B2 (ja) * 1999-01-12 2002-06-17 日本電気株式会社 半導体装置及びその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004312007A (ja) * 2003-04-03 2004-11-04 Samsung Electronics Co Ltd 金属−絶縁体−金属キャパシタを含む二重ダマシン配線構造及びその製造方法

Also Published As

Publication number Publication date
GB0121198D0 (en) 2001-10-24
GB2371146A (en) 2002-07-17
KR20020018610A (ko) 2002-03-08

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Legal Events

Date Code Title Description
A761 Written withdrawal of application

Free format text: JAPANESE INTERMEDIATE CODE: A761

Effective date: 20050112