JP2002164288A - Temperature control system - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a temperature control system which controls the temperature of the fluid for temperature control, used in a semiconductor manufacturing apparatus, with high accuracy. SOLUTION: The system includes a tank T. The tank T has a fluid for temperature control used in a semiconductor manufacturing apparatus, a storage chamber 20 for holding the temperature control fluid therein, a jacket 19 covering the storage chamber, and an inert liquid filled in the jacket 19. The system also includes a heat exchanger 21 for circulating the inert liquid between the heat exchanger and the jacket 19, circulation passages 22 and 23 connected between the heat exchanger 21 and jacket 19, a pump 24 provided in the passages 22 and 23 for circulating the inert fluid, a sensor 10 for measuring the temperature of the temperature control fluid within the storage chamber 20, and a temperature adjuster 26 for electrically connecting the sensor 10 and heat exchanger 21. The temperature adjuster 26 controls the heat exchanger 21, according to the temperature of the sensor 10 for heating or cooling the inert liquid, thus keeping the temperature of the temperature control fluid constant.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a temperature control system for maintaining a constant temperature of a temperature control fluid used in a semiconductor manufacturing apparatus such as an epitaxial growth or a CVD process.

[0002]

FIG. 3 is a view showing an epitaxial growth apparatus 1. As shown in FIG. This epitaxial growth apparatus 1 is an apparatus for growing a silicon crystal on the surface of a semiconductor substrate 2.
In a tank 3 of this apparatus, trichlorosilane as a raw material for growing a silicon crystal on the surface of the semiconductor substrate 2 is stored in a liquid state. And this tank 3
Is connected to the reaction chamber 4 via the supply passage 5,
A regulator 6 and a mass flow controller 7 are connected in series to the supply passage 5. The regulator 6 is for keeping the pressure of the fluid supplied from the tank 3 to the reaction chamber 4 constant. The mass flow controller 7 is for keeping the flow rate of the fluid supplied from the tank 3 to the reaction chamber 4 constant. That is, the regulator 6 and the mass flow controller 7 keep the supply pressure and the supply flow rate of the fluid supplied to the reaction chamber 4 constant.

Further, in order to stably grow silicon crystals in the reaction chamber 4, the temperature of trichlorosilane must be kept at a set temperature. Conventionally,
The temperature control was performed as follows. A heater 8 is provided on the outer periphery of the tank 3 as described above, and the outside thereof is covered with a heat insulating material 9. The heater 8 is for heating trichlorosilane in the tank 3.
Then, the heat insulating material 9 is for preventing heat radiation from the trichlorosilane in the tank 3 at the set temperature. In order to measure the temperature of trichlorosilane heated as described above, a temperature sensor 10 is attached to the tank 3, and the temperature sensor 10 is connected to a temperature controller 12 via a wiring 11. The temperature controller 12 configured as described above turns on / off the power of the heater 8 in accordance with the temperature signal from the temperature sensor 10 and maintains the temperature of trichlorosilane in the tank 3 at the set temperature. Further, the set temperature of trichlorosilane is input to the temperature controller 12 in advance.

[0004] Reference numeral 14 in the figure denotes a hydrogen introduction path for supplying hydrogen as a carrier gas for trichlorosilane. This hydrogen is supplied in gaseous form to the tank 3 from a cylinder not shown. In some cases, hydrogen supplied in a gaseous state is supplied with a temperature difference of ± several degrees from the set temperature. As described above, when the supplied hydrogen has a temperature difference of ± several degrees with respect to the set temperature, the calorific value of the temperature difference is carried into the tank 3. However, even if the calorific value of the temperature difference enters the tank 3, if the amount of the liquid trichlorosilane stored in the tank 3 is sufficient compared to the supplied amount, the temperature change due to the caloric value will hardly occur. Absorb. This is because if the ratio of the amount of supplied hydrogen to the amount of trichlorosilane stored in a liquid state is sufficiently small, the change in temperature due to the calorific value will be almost completely absorbed by the liquid trichlorosilane. Therefore, the temperature change of the entire trichlorosilane in the tank 3 due to the supplied hydrogen is very small.

[0005] Further, reference numeral 15 in the figure denotes a trichlorosilane introduction path for replenishing trichlorosilane in accordance with the consumption amount of trichlorosilane in the tank 3. The replenished trichlorosilane may also be supplied to the tank 3 with a temperature difference of ± several degrees from the set temperature in the tank 3. As described above, when the supplied trichlorosilane has a temperature difference of ± several degrees from the set temperature, the calorific value of the temperature difference is carried into the tank 3. However, even if the calorific value of the temperature difference enters the tank 3, the liquid trichlorosilane stored in the tank 3 almost absorbs the temperature change due to the calorific value. This is because the amount of trichlorosilane stored in the tank 3 is sufficiently larger than the amount of supplied trichlorosilane, and the temperature change due to the amount of heat is almost completely absorbed by the liquid trichlorosilane in the tank 3. It is. Further, since the supplied trichlorosilane is supplied in a smaller amount than the supplied hydrogen, the influence on the temperature of the trichlorosilane in the tank 3 is further smaller than that of hydrogen. Therefore, the influence of the trichlorosilane supplied from the introduction path 15 on the temperature change of the entire trichlorosilane in the tank 3 becomes small.

However, even if the temperature change in the tank 3 is minute, the change may affect the epitaxial growth process. Therefore, it is necessary to send gaseous trichlorosilane to the reaction chamber 4 via the supply passage 5 while keeping the temperature constant within a small error range. In order to supply gaseous trichlorosilane at a constant temperature, it is necessary to control the temperature error of the liquid trichlorosilane in the tank 3 slightly to keep it constant. Therefore, the temperature controller 12 controls as follows in order to keep the temperature in the tank at a constant temperature. If the supplied hydrogen or trichlorosilane is lower than the set temperature, the temperature of trichlorosilane in the tank 3 becomes lower than the set temperature although it is very small. When the temperature of trichlorosilane in the tank 3 becomes lower than the set temperature, the temperature sensor 10 detects this temperature, and the temperature controller 12 turns on the power supply of the heater 8, and the temperature of trichlorosilane becomes the set temperature. To warm tank 3. When the temperature of the trichlorosilane in the tank 3 reaches the set temperature, the temperature controller 1
2 turns off the power supply of the heater 8.

On the contrary, if the supplied hydrogen or trichlorosilane is higher than the set temperature or the heating is excessive, the temperature of trichlorosilane in the tank 3 becomes higher than the set temperature although it is very small. When the temperature of the trichlorosilane in the tank 3 becomes higher than the set temperature, the temperature sensor 10 detects this temperature, and the temperature controller 12 turns off the power of the heater 8 and turns off the trichlorosilane in the tank 3. Dissipate heat naturally until the temperature reaches the set temperature. In this way, the power of the heater 8 is repeatedly turned on and off to heat the outer periphery of the tank 3 and radiate heat from the outer periphery of the tank 3 so as to control the temperature of trichlorosilane in the tank 3 to be constant. .

[0008] The trichlorosilane gas kept at a constant temperature as described above is sent into the reaction chamber 4 together with hydrogen through the supply passage 5, via the regulator 6 and the mass flow controller 7. The semiconductor substrate 2 is placed on the susceptor 16 in the reaction chamber 4 in advance.
Then, the trichlorosilane introduced into the reaction chamber 4 and the hydrogen are caused to react with each other by the high frequency from the coil 17 outside the reaction chamber 4 to form a silicon single crystal on the surface of the semiconductor substrate 2. Unnecessary gas generated by the above reaction is exhausted from the exhaust passage 18.

[0009]

In the conventional system as described above, the temperature of trichlorosilane in the tank 3 is changed while heating and natural heat radiation are repeated in response to a temperature change due to the supplied hydrogen or trichlorosilane. Was controlled to be constant, but there were the following problems.
As described above, since the temperature change due to the supplied hydrogen and trichlorosilane is a minute temperature change, the trichlorosilane in the tank 3 may be excessively heated. If the temperature is too high, the temperature needs to be lowered. However, since the surroundings of the tank 3 are covered with the heat insulating material 9, the temperature does not drop immediately in natural heat radiation, and it takes time to reach the set temperature. In addition, if overheating and natural heat radiation are repeated, a problem that the set temperature is not easily converged may occur.

Further, when cooling by the natural heat radiation as described above, the temperature of the tank 3 itself may become lower even though the trichlorosilane in the tank 3 maintains the set temperature. That is, under this situation, a small temperature difference occurs between trichlorosilane in the tank 3 and the tank 3 around the trichlorosilane. For this reason, after the temperature of the trichlorosilane reaches the set temperature, heat is transferred, and the temperature of the trichlorosilane drops slightly from the set temperature. When heating is applied to this temperature change, natural heat radiation and heating are repeated, and the same problem as described above may occur. In the control in which the heating and the natural heat radiation are repeated as described above, it has been difficult to keep the temperature of trichlorosilane constant with a high degree of accuracy even for a minute temperature change.

Further, if the temperature of trichlorosilane cannot be kept constant with high accuracy, the temperature of trichlorosilane to be supplied varies during the epitaxial growth process in the reaction chamber 4, and a uniform growth process cannot be obtained. There was also a problem. An object of the present invention is to provide a temperature control system for controlling the temperature of a temperature control fluid used in a semiconductor manufacturing apparatus with high accuracy.

[0012]

According to a first aspect of the present invention, a temperature control fluid used in a semiconductor manufacturing apparatus, a storage chamber for storing the temperature control fluid, and a jacket covering the storage chamber are provided in the tank. A heat exchange device for circulating an inert liquid between the jacket and the jacket, a circulation passage connecting the heat exchange device and the jacket, A pump that circulates the inert liquid in the passage, a sensor that measures the temperature of the temperature control fluid in the storage chamber, and a temperature controller that electrically connects the sensor and the heat exchange device; The temperature controller controls the heat exchanger according to the temperature of the sensor, heats or cools the inert liquid, and keeps the temperature of the temperature control fluid constant. A.

The second invention is characterized in that the heat exchange device is provided with a Peltier element on the premise of the first invention.

The third invention is characterized in that the heat exchange device is provided with a compressor while assuming the first invention.

The fourth invention is based on the premise of the above invention,
A passage for supplying a supply fluid such as a carrier gas to the tank; a heat exchanger provided in the passage; and a supply fluid heat exchange device for controlling the heat exchanger. While controlling the temperature of the supply fluid with the exchanger, the temperature controller according to the temperature of the sensor, controls the heat exchange device to heat or cool the temperature control fluid,
It is characterized in that the temperature of the temperature control fluid containing the supply fluid is kept constant.

[0016]

FIG. 1 shows a first embodiment of the present invention. A tank T has an outside covered with a heat insulating material 9 and a control water jacket 19 provided inside. . In the tank T as described above, the hydrogen introduction path 14 is provided.
And a trichlorosilane introduction passage 15 which is a temperature control fluid of the present invention, and a supply passage 5 for guiding the fluid in the storage chamber 20 in the tank T to an epitaxial device (not shown).

The control water jacket 19 is filled with an inert liquid, and the jacket 19 is connected to a heat exchanger 21 via a circulation passage. In other words, the upstream circulation passage 22 is provided in the control water jacket 19.
And the downstream circulation passage 23, and these circulation passages 2
The heat exchange device 21 is connected between the heat exchange devices 2 and 23.
Reference numeral 24 in the drawing denotes a pump provided in the upstream circulation passage 22 for forcibly circulating the inert liquid in the jacket 19.

The heat exchange device 21 heats or cools the inert liquid in the control water jacket 19 using a Peltier element. In other words, the Peltier element generates heat or absorbs heat at the junction of dissimilar metals according to the direction of the current. When one of the junctions absorbs heat from the inert liquid, the other joins the other. Fever.
The heat exchange device 21 is provided with a passage 25 for circulating cooling water. The cooling water is used to cool the other heated joint and promote the heat absorbing effect of the one joint. ing.

A temperature controller 26 is connected to the heat exchanger 21 as described above via a wiring 28. The temperature controller 26 is electrically connected to the temperature sensor 10 for measuring the temperature in the tank T via a wiring 27.
The temperature controller 26 monitors the temperature of trichlorosilane in the tank T from the temperature sensor 10. In addition, the temperature controller 26 has a function of controlling the heat exchange device 21 according to the temperature of the temperature sensor 10.

Hereinafter, a specific operation for maintaining the temperature of trichlorosilane at the set temperature will be described. First, the set temperature of trichlorosilane is input to the temperature controller 26.
Then, the pump 24 is driven to control the control water jacket 1.
The inert liquid in 9 is forcibly circulated through the heat exchange device 21. At this time, the temperature of trichlorosilane in the tank T is detected by the temperature sensor 10 and fed back to the temperature controller 26. If the temperature of the trichlorosilane is lower than the set temperature, the temperature controller 26
Flows an electric current through the Peltier element of the heat exchange device 21 to cause one of the joints to generate heat and heat the inert liquid. The inert liquid thus heated circulates between the control water jacket 19 and the heat exchange device 21. Therefore,
As the temperature of the inert liquid in the control water jacket 19 increases, the temperature of the trichlorosilane in the tank T also increases due to the heat. In this way, when the trichlorosilane rises to the set temperature, the temperature is fed back to the temperature controller 26, so that the temperature controller 26
The value of the current to the Peltier element of the heat exchange device 21 is stopped or the value is reduced.

Contrary to the above, if the temperature of trichlorosilane is higher than the set temperature, the temperature controller 26 supplies a current in the opposite direction to the case of the above-mentioned heat generation, cools one of the joints, and Cool the active liquid. The inert liquid thus cooled circulates between the control water jacket 19 and the heat exchange device 21. Therefore, the inert liquid in the control water jacket 19 is cooled, and the trichlorosilane in the tank 3 is also cooled. In this way, once the trichlorosilane has cooled to the set temperature,
Since the temperature is fed back to the temperature controller 26, the temperature controller 26 stops or reduces the value of the current to the Peltier element of the heat exchange device 21.

When one of the joints of the Peltier element is being cooled, the other joint is cooled by the cooling water from the passage 25 as described above, so that the heat absorbing effect of one of the joints is promoted. Will be.

As described above, in the first embodiment, even if the temperature in the tank T is slightly changed by the supplied hydrogen, trichlorosilane, or the like, the jacket 19 covering the storage chamber 20 can be used.
Since the temperature of the inert liquid inside is directly controlled, it is possible to control the temperature of trichlorosilane to be kept constant with high accuracy. As described above, since the temperature of trichlorosilane can be kept constant with high accuracy, a uniform silicon growth film can be formed with little variation in the temperature of trichlorosilane during the epitaxial growth process. Further, since the inert liquid can be directly cooled by the cooling function of the heat exchange device provided with the Peltier element, the temperature can be lowered faster than the conventional natural heat radiation. Therefore, temperature control with good responsiveness to a temperature change can be performed.

Next, a second embodiment of the present invention will be described with reference to FIG. In the same manner as in the first embodiment, the outer periphery of the storage chamber 20 storing the liquid trichlorosilane is covered with a control water jacket 19 filled with an inert liquid. Covering. Then, from the tank T, gaseous trichlorosilane is passed through the supply passage 5 and sent to an epitaxial growth apparatus (not shown). In addition, the code | symbol 15 in a figure is
3 is a trichlorosilane introduction path which is a temperature control fluid of the present invention.

The jacket 19 is connected to a first heat exchanger 29 via a circulation passage. That is, the upstream circulation path 30 and the downstream circulation path 31 are connected to the control water jacket 19, and these circulation paths 30, 31
The first heat exchanger 29 is connected between the first and second heat exchangers. In addition,
In the drawing, reference numeral 32 denotes a pump provided in the downstream circulation passage 31 for forcibly circulating the inert liquid in the jacket 19. Reference numeral 33 in the drawing denotes an inert liquid storage chamber provided in the circulation passage 31 for absorbing a temperature change of the inert liquid.

In the second embodiment, a heat exchanger 34 having the first heat exchanger 29 is provided. The configuration of the heat exchanger 34 for heating or cooling the inert liquid in the first heat exchanger 29 will be described below. The first heat exchanger 29
Is connected to the second heat exchanger 35 via a circulation passage. That is, the first heat exchanger 29 is provided with the upstream circulation passage 3.
6 and the downstream circulation passage 37, and the second heat exchanger 35 is connected between the circulation passages 36 and 37. In the figure, reference numeral 38 denotes a compressor provided in the upstream circulation passage 36 for compressing the refrigerant gas on the first heat exchanger 29 side and sending it to the second heat exchanger 34 side. In the figure, reference numeral 39 denotes an expansion valve provided in the downstream circulation passage 37 for reducing the pressure of the refrigerant gas on the second heat exchanger 35 side and sending it to the first heat exchanger 29 side.

As shown in FIG. 2, a branch passage 40 is provided in the upstream circulation passage 36 from between the compressor 38 and the second heat exchanger 35.
0 is connected to the circulation passage 37 on the downstream side. However, the branch passage 40 is connected between the expansion valve 39 and the first heat exchanger 29. Further, the branch passage 40
And a cooling electromagnetic valve 42 is provided in the downstream circulation passage 37 between the expansion valve 39 and the second heat exchanger 35. These heating solenoid valves 41,
By controlling the opening and closing of the cooling electromagnetic valve 42, the first
The inert liquid is heated or cooled by the heat exchanger 29. This control will be described later.

On the other hand, the second heat exchanger 35 of the heat exchanger 34
Is provided with a passage 44 for circulating a coolant such as cooling water or the atmosphere so as to absorb heat from the coolant gas sent from the compressor 38.

The above-described heat exchange device 34 is controlled by a temperature controller 43. The heating electromagnetic valve 41 is electrically connected to the temperature controller 43 via a wiring 45. Further, the cooling electromagnetic valve 42 is also electrically connected to the temperature controller 43 by a wiring 45. The temperature controller 43 can open and close the heating electromagnetic valve 41 or the cooling electromagnetic valve 42 independently of each other. Further, the temperature controller 43 is electrically connected to the temperature sensor 10 for measuring the temperature in the tank T via a wiring 46. The temperature controller 43 thus configured is
The temperature of the trichlorosilane in the tank T is monitored from the temperature sensor 10. Moreover, this temperature controller 43
A function of controlling the heat exchange device 34 according to the temperature of the temperature sensor 10 is provided.

In the second embodiment, hydrogen as a supply fluid is supplied to the tank T via the third heat exchanger 47 shown in FIG. Next, the configuration of the supply fluid heat exchange device 48 including the third heat exchanger 47 will be described. The third heat exchanger 47 is connected to a heater 49 via a circulation passage. That is, the upstream side circulation passage 50 and the downstream side circulation passage 51 are connected to the third heat exchanger 47, and the heater 49 is connected between the circulation passages 50 and 51. Incidentally, reference numeral 52 in the figure
Is a pump provided in the downstream circulation passage 51 for forcibly circulating the refrigerant liquid between the third heat exchanger and the heater 49. Reference numeral 53 in the figure denotes a temperature sensor provided in the circulation passage 51 for monitoring the temperature of the refrigerant liquid.

In the downstream circulation passage 31 circulating the inert liquid, the control water jacket 19 is circulated.
A branch passage 54 is provided between the pump and the pump 32. The branch passage 54 is connected to the inert liquid storage chamber 33 via the heater 49. This branch passage 54
A regulating valve 55 is provided in the middle of the process, and by opening the regulating valve 55, the inert liquid from the branch passage 54 absorbs heat from the refrigerant liquid flowing in the heater 49. The flow rate of the inert liquid from the circulation passage 31 is adjusted by adjusting the degree of opening of the adjustment valve 55. However, the degree of opening of the regulating valve 55 is adjusted to such an extent that the temperature of the inert liquid circulating between the first heat exchanger 29 and the control water jacket 19 is not significantly affected.

Further, as shown in FIG. 2, the supply fluid heat exchange device 48 is provided with a temperature controller 56. The temperature controller 56 is electrically connected to the heater 49 via a wiring 57. In addition, the temperature controller 56
Is a temperature sensor 5 for measuring the temperature of the circulating refrigerant liquid.
3 and a wiring 58. The temperature controller 56 monitors the temperature of the refrigerant liquid from the temperature sensor 53. In addition, the temperature controller 56 has a function of controlling the temperature of the circulating refrigerant liquid according to the temperature of the temperature sensor 53. Third heat exchanger 4 of supply fluid heat exchange device 48 configured as described above
7 is connected to the tank T through a hydrogen supply passage 59.

Hereinafter, a specific operation for maintaining the temperature of trichlorosilane at the set temperature will be described. First, the set temperature of trichlorosilane is input to the temperature controller 43.
Then, the pump 32 is driven to control the control water jacket 1.
9, the inert liquid in the first heat exchanger 2 of the heat exchanger 34
Forcibly circulate via 9 The compressor 38 is operated while the pump 32 is driven. At this time, the temperature of trichlorosilane in the tank T is detected by the temperature sensor 10 and fed back to the temperature controller 43. The temperature of the trichlorosilane is controlled by the temperature controller 4
If the temperature is lower than the set temperature input to 3, the temperature controller 43
Opens the heating electromagnetic valve 41 with the cooling electromagnetic valve 42 closed. By opening the heating electromagnetic valve 41, the high-temperature refrigerant gas compressed by the compressor 38 is supplied to the first heat exchanger 29.
Will be sent to Therefore, in the first heat exchanger 29, the inert liquid absorbs heat from the refrigerant gas. When the temperature of the inert liquid rises due to the absorption of heat, the control water jacket 19
The temperature of the inert liquid inside increases. Therefore, the temperature of trichlorosilane in the tank T increases. In this way,
When the temperature of the trichlorosilane rises to the set temperature, the temperature is fed back to the temperature controller 43, and the temperature controller 43 closes the heating electromagnetic valve 41.

Conversely, if the temperature of trichlorosilane is higher than the set temperature inputted to the temperature controller 43, the temperature controller 43 opens the cooling electromagnetic valve 42 with the heating electromagnetic valve 41 closed. . By opening the cooling electromagnetic valve 42, the refrigerant gas radiated by the second heat exchanger 35 passes through the expansion valve 39, so that the refrigerant gas has a low temperature. Therefore, in the first heat exchanger 29, the refrigerant gas absorbs heat from the inert liquid. As the heat is absorbed and the temperature of the inert liquid decreases, the temperature of the inert liquid in the control water jacket 19 decreases. Therefore, the temperature of the trichlorosilane in the tank T decreases. Then, when the temperature from the temperature sensor 10 reaches the set temperature, the temperature controller 50 closes the cooling electromagnetic valve 47. In this way, when the temperature of the trichlorosilane drops to the set temperature, the temperature is fed back to the temperature controller 43, so that the temperature controller 43
Close 2. By switching the opening and closing of the solenoid valve as described above, the temperature change in the tank T
Trichlorosilane is controlled to maintain a constant temperature.

Further, the temperature of the hydrogen gas supplied into the tank T is controlled by the supply fluid heat exchange device 48 as follows. First, the set temperature of the supplied hydrogen is input to the temperature controller 56. Then, the pump 52 is driven to circulate the refrigerant liquid. The temperature of the refrigerant liquid at this time is detected by the temperature sensor 53 and fed back to the temperature controller 56. If the temperature of the circulating refrigerant liquid is lower than the temperature set in the temperature controller 56, the temperature controller 56 turns on the power of the heater 49. Turning on the power supply of the heater 49 increases the temperature of the circulating refrigerant liquid. In this way, the coolant liquid rises to the set temperature, and the temperature is fed back to the temperature controller 56, so that the temperature controller 56 turns off the power of the heater 49.

Conversely, if the temperature of the circulating refrigerant liquid is higher than the temperature set in the temperature controller 56, the temperature controller 56 turns off the power of the heater 49.
Since the power of the heater 49 is off, the branch passage 54
The temperature of the refrigerant liquid circulating between the heater 49 and the third heat exchanger 47 is reduced by the inert liquid from the heater. In this manner, the coolant liquid drops to the set temperature, and the temperature is fed back to the temperature controller 56, so that the temperature controller 56 keeps the power of the heater 49 off.

As described above, in the second embodiment, even if the temperature in the tank T is slightly changed by the supplied trichlorosilane or the like, the temperature of the inert liquid in the jacket 19 covering the storage chamber 20 is directly controlled. Therefore, it is possible to control to keep the temperature of trichlorosilane constant with high accuracy. As described above, since the temperature of trichlorosilane can be kept constant with high accuracy, a uniform silicon growth film can be formed with little variation in the temperature of trichlorosilane during the epitaxial growth process. Further, since the inert liquid can be directly cooled by the cooling function of the heat exchange device 34 including the compressor, the temperature can be lowered faster than in the conventional natural heat radiation. Therefore, temperature control with good responsiveness to a temperature change can be performed. Further, since control is performed by a heat exchange device using a compressor, control with good responsiveness to a large temperature change of trichlorosilane can be performed by increasing the capacity of the compressor.

As described above, in the second embodiment, the hydrogen gas supplied to the tank T is controlled to keep the temperature constant before supplying the hydrogen gas to the tank T. Therefore, the influence on the temperature of the fluid such as trichlorosilane or hydrogen stored in the tank T in advance can be further reduced. Therefore, the temperature of trichlorosilane can be controlled with higher accuracy.

In the second embodiment, the tank T
Although the temperature of the hydrogen supplied to the inside is controlled, the supply fluid heat exchange device 4 of the second embodiment is different from the first embodiment.
8 may be used to control the temperature of the supplied hydrogen.

In the first or second embodiment, the temperature of trichlorosilane, which is the supply fluid to be supplied into the tank T, is controlled by using the supply fluid heat exchange device 48 of the second embodiment. May be. If the temperature of the supplied trichlorosilane is controlled to be constant, the temperature of the trichlorosilane in the tank T can be controlled with higher accuracy.

[0041]

According to the first to third aspects of the present invention, the inert solution is filled in the jacket covering the storage chamber storing the temperature control fluid, and the temperature of the inert solution is directly controlled. . Therefore, even in the case of a minute temperature change in the tank, the temperature of the inert liquid in the jacket can be directly controlled, so that the temperature of the temperature control fluid can be kept constant with high accuracy.

According to the third invention, the control is performed by the heat exchange device using the compressor. For this reason, if the capacity of the compressor is increased, an effect of performing control with good responsiveness to a large temperature change of trichlorosilane can be expected.

According to the fourth aspect, the temperature of the supplied fluid is controlled. Therefore, the influence on the temperature of the fluid such as trichlorosilane and hydrogen stored in the tank in advance can be further reduced.

[Brief description of the drawings]

FIG. 1 is a block diagram illustrating a temperature control system according to a first embodiment.

FIG. 2 is a block diagram illustrating a temperature control system according to a second embodiment.

FIG. 3 is a diagram showing an epitaxial growth apparatus.

[Explanation of symbols]

 Reference Signs List 10 Temperature sensor 19 Control water jacket 20 Storage chamber 21, 34 Heat exchange device 22, 30 Circulation passage (upstream side) 23, 31 Circulation passage (downstream side) 24, 32 Pump 22, 43 Temperature controller 38 Compressor 47 Third Heat exchanger 48 Supply fluid heat exchanger 59 Passage T tank

Claims (4)

[Claims] A tank includes a temperature control fluid used in a semiconductor manufacturing apparatus, a storage chamber for storing the temperature control fluid, a jacket covering the storage chamber, and an inert liquid filled in the jacket. On the other hand, a heat exchange device in which an inert liquid circulates between the jacket and the jacket, and a circulation passage connecting the heat exchange device and the jacket,
A pump for circulating the inert liquid in the circulation passage, a sensor for measuring the temperature of the temperature control fluid in the storage chamber, and a temperature controller electrically connected to the sensor and the heat exchange device. The temperature controller controls the heat exchanger in accordance with the temperature of the sensor to heat or cool the inert liquid and keep the temperature of the temperature control fluid constant. A temperature control system. 2. The temperature control system according to claim 1, wherein the heat exchange device includes a Peltier element. 3. The temperature control system according to claim 1, wherein the heat exchange device includes a compressor. 4. A tank is provided with a passage for supplying a supply fluid such as a carrier gas to the tank, a heat exchanger provided in the passage, and a supply fluid heat exchange device for controlling the heat exchanger. The exchange device controls the temperature of the supply fluid with the heat exchanger, and the temperature controller controls the heat exchange device according to the temperature of the sensor to heat or cool the temperature control fluid, and the supply fluid The temperature control system according to any one of claims 1 to 3, wherein the temperature of the temperature control fluid containing (i) is kept constant.