JP2002160168A - Single layer grinding wheel - Google Patents
Single layer grinding wheelInfo
- Publication number
- JP2002160168A JP2002160168A JP2000354147A JP2000354147A JP2002160168A JP 2002160168 A JP2002160168 A JP 2002160168A JP 2000354147 A JP2000354147 A JP 2000354147A JP 2000354147 A JP2000354147 A JP 2000354147A JP 2002160168 A JP2002160168 A JP 2002160168A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- brazing material
- brazing
- superabrasive grains
- less
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
- Polishing Bodies And Polishing Tools (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、例えば半導体ウエ
ーハ等の被研磨材の表面をＣＭＰ装置によって研磨する
際に用いられる研磨用のパッドをコンディショニングす
るため等に用いられる単層砥石に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a single-layer grindstone used for conditioning a polishing pad used when a surface of a material to be polished such as a semiconductor wafer is polished by a CMP apparatus.
【０００２】[0002]
【従来の技術】従来、シリコンインゴットから切り出し
た半導体ウエーハ（以下、単にウエーハという）の表面
を化学的且つ機械的に研磨するＣＭＰ装置（ケミカルメ
カニカルポリッシングマシン）の一例として、図３に示
すような装置がある。ウエーハはデバイスの微細化に伴
って高精度かつ無欠陥表面となるように鏡面研磨するこ
とが要求されている。ＣＭＰによる研磨のメカニズム
は、微粒子シリカ等によるメカニカルな要素（遊離砥
粒）とアルカリ液や酸性液等によるエッチング要素とを
複合したメカノ・ケミカル研磨法に基づいている。この
ＣＭＰ装置１は、図３に示すように中心軸２に取り付け
られた円板状の回転テーブル３上に例えば硬質ウレタン
からなるポリッシング用のパッド４が設けられ、このパ
ッド４に対向して且つパッド４の中心軸２から偏心した
位置に自転可能なウエーハキャリア５が配設されてい
る。このウエーハキャリア５はパッド４よりも小径の円
板形状とされてウエーハ６を保持するものであり、この
ウエーハ６がウエーハキャリア５とパッド４間に配置さ
れてパッド４側の表面の研磨に供され鏡面仕上げされ
る。2. Description of the Related Art Conventionally, as an example of a CMP apparatus (chemical mechanical polishing machine) for chemically and mechanically polishing a surface of a semiconductor wafer (hereinafter, simply referred to as a wafer) cut out from a silicon ingot, as shown in FIG. There is a device. Wafers are required to be mirror-polished so as to have a highly accurate and defect-free surface with the miniaturization of devices. The mechanism of polishing by CMP is based on a mechano-chemical polishing method in which a mechanical element (free abrasive grains) made of fine-particle silica or the like is combined with an etching element made of an alkaline solution, an acidic solution, or the like. As shown in FIG. 3, the CMP apparatus 1 is provided with a polishing pad 4 made of, for example, hard urethane on a disk-shaped rotary table 3 attached to a center shaft 2. A wafer carrier 5 capable of rotating is arranged at a position eccentric from the center axis 2 of the pad 4. The wafer carrier 5 has a disk shape smaller in diameter than the pad 4 and holds the wafer 6. The wafer 6 is disposed between the wafer carrier 5 and the pad 4 and used for polishing the surface on the pad 4 side. It is mirror-finished.
【０００３】研磨に際して、例えば上述した微粒子シリ
カ等からなる遊離砥粒が研磨剤として用いられ、更にエ
ッチング用のアルカリ液等が混合されたものが液状のス
ラリｓとしてパッド４上に供給されているため、このス
ラリｓがウエーハキャリア５に保持されたウエーハ６と
パッド４との間に流動して、ウエーハキャリア５でウエ
ーハ６が自転し、同時にパッド４が中心軸２を中心とし
て例えばＰ方向に回転するために、パッド４でウエーハ
６の一面が研磨される。ウエーハ６の研磨を行う硬質ウ
レタン製などのパッド４上にはスラリｓを保持する微細
な発泡層が多数設けられており、これらの発泡層内に保
持されたスラリｓでウエーハ６の研磨が行われる。とこ
ろが、ウエーハ６の研磨を繰り返すことでパッド４の研
磨面の平坦度が低下したり目詰まりするためにウエーハ
６の研磨精度と研磨効率が低下するという問題が生じ
る。In polishing, for example, the above-mentioned free abrasive grains made of fine silica or the like are used as an abrasive, and a mixture of an alkaline solution for etching and the like is supplied onto the pad 4 as a liquid slurry s. Therefore, the slurry s flows between the wafer 6 held on the wafer carrier 5 and the pad 4, and the wafer 6 rotates on the wafer carrier 5, and at the same time, the pad 4 moves in the P direction around the center axis 2. One surface of the wafer 6 is polished by the pad 4 to rotate. A large number of fine foam layers for holding the slurry s are provided on the pad 4 made of hard urethane or the like for polishing the wafer 6, and the wafer 6 is polished with the slurry s held in these foam layers. Will be However, the repetition of the polishing of the wafer 6 causes the flatness of the polished surface of the pad 4 to be reduced or causes clogging, resulting in a problem that the polishing accuracy and the polishing efficiency of the wafer 6 are reduced.
【０００４】そのため、従来からＣＭＰ装置１には図３
に示すようにパッドコンディショナ８が設けられ、パッ
ド４の表面を再研削（コンディショニング）するように
なっている。このパッドコンディショナ８は、例えば旋
回軸兼回転軸９にアーム１０を介してホイール１１が設
けられ、ホイール１１を回転させることで、パッド４の
表面を研磨してパッド４の表面の平坦度等を回復または
維持し目詰まりを解消するようになっている。このホイ
ール１１は、例えば図４に示すように台金１２上に砥粒
層１３が形成されており、この砥粒層１３は台金１２上
に電気めっきなどによりダイヤモンドやｃＢＮなどの超
砥粒１４を金属結合相１５で分散固定して構成されてい
る。この金属結合相１５は例えばニッケルめっきなどで
構成されている。For this reason, conventionally, the CMP apparatus 1 has
As shown in FIG. 1, a pad conditioner 8 is provided to regrind (condition) the surface of the pad 4. The pad conditioner 8 is provided with a wheel 11 via, for example, an arm 10 on a revolving shaft / rotating shaft 9. By rotating the wheel 11, the surface of the pad 4 is polished to flatness of the surface of the pad 4. To recover or maintain clogging. In this wheel 11, for example, as shown in FIG. 4, an abrasive layer 13 is formed on a base metal 12, and this abrasive layer 13 is formed on the base metal 12 by electroplating or the like to form a super-abrasive material such as diamond or cBN. 14 is dispersed and fixed by a metal binding phase 15. This metal binding phase 15 is made of, for example, nickel plating.
【０００５】[0005]
【発明が解決しようとする課題】ところで、近年半導体
素子サイズのシリコンパターンの溝幅（配線幅）の微細
化が進み、そのためにパッド４によるウエーハ６の研摩
の際に例えば溝幅０．１０〜０．１８μｍ程度のマイク
ロスクラッチが生じると、半導体ウエーハの抵抗測定時
等にショートする等して不具合の原因になる。ここで、
マイクロスクラッチ等のスクラッチの原因の１つとして
超砥粒１４である人工ダイヤモンド自体が研削時に微細
に破砕され、超砥粒１４にスクラッチが生じてその破砕
片がパッド４上に落下することが挙げられる。そのため
にウエーハ６の研削時にパッド４上に保持された超砥粒
１４の破砕片によってウエーハ表面にスクラッチを生じ
るという問題が生じる。In recent years, the groove width (wiring width) of a silicon pattern of a semiconductor element size has been miniaturized. For this reason, when the wafer 6 is polished by the pad 4, for example, the groove width is 0.10 to 0.10. When micro scratches of about 0.18 μm are generated, a short circuit occurs when measuring the resistance of the semiconductor wafer or the like, which causes a problem. here,
One of the causes of scratches such as micro scratches is that the artificial diamond itself, which is the superabrasive grains 14, is finely crushed during grinding, scratches are generated in the superabrasive grains 14, and the crushed pieces fall onto the pad 4. Can be For this reason, there is a problem in that when the wafer 6 is ground, crushed pieces of the superabrasive grains 14 held on the pad 4 cause scratches on the wafer surface.
【０００６】またホイール１１について電着によって砥
粒層１３を製作すると、６０〜１００℃程度の低温で電
着できるために製作時に熱によるダイヤモンド等の超砥
粒１４の損傷が抑えられる利点があるが、電着めっきに
よる超砥粒１４の保持は機械的な保持であるために保持
力が弱く砥粒層１３の寿命が短い欠点がある。これに対
して砥粒層１３の金属結合相１５を加熱ろう付けによっ
て製作すると超砥粒１４はろう材による化学的な保持が
なされるために保持力が高く脱落し難いという利点を有
するものの、加熱ろう付けによると加熱温度が９００℃
〜１２００℃程度になるために人工ダイヤモンドからな
る超砥粒１４の表面がグラファイト化し、研磨時に人工
ダイヤモンド中のＮｉやＣｒ等の微量の不純物が表面か
ら欠落し易く、これが超砥粒１４のスクラッチになり、
落下した超砥粒１４の破砕片が上述したウエーハ表面の
スクラッチの原因になる。Further, when the abrasive layer 13 is manufactured by electrodeposition on the wheel 11, the electrodeposition can be performed at a low temperature of about 60 to 100 ° C., so that there is an advantage that damage to the superabrasive particles 14 such as diamond due to heat during manufacture is suppressed. However, since the holding of the superabrasive grains 14 by electrodeposition plating is mechanical holding, there is a disadvantage that the holding force is weak and the life of the abrasive grain layer 13 is short. On the other hand, if the metal bonding phase 15 of the abrasive layer 13 is manufactured by heating brazing, the superabrasive particles 14 have the advantage that they are chemically retained by the brazing material and thus have a high holding power and are hard to fall off. Heating temperature is 900 ℃ according to heating brazing
The temperature of the superabrasive grains 14 made of artificial diamond is graphitized due to the temperature of about 1200 ° C., and trace impurities such as Ni and Cr in the artificial diamond are liable to be lost from the surface during polishing. become,
The crushed fragments of the superabrasive grains 14 cause the above-mentioned scratches on the wafer surface.
【０００７】本発明は、このような実情に鑑みて、超砥
粒から破砕片が脱落し難く保持力が高く、従って被削材
にスクラッチを生じにくいメタルろう付けによる単層砥
石を提供することを目的とする。The present invention has been made in view of the above circumstances, and provides a single-layer grindstone formed by metal brazing, in which crushed pieces are less likely to fall off from superabrasive grains and have a high holding force, and are therefore less likely to cause scratches on a work material. With the goal.
【０００８】[0008]
【課題を解決するための手段】本発明に係る単層砥石
は、ＡｇとＣｕの（ＡｇーＣｕ系）粉末にＳｉＯ2を主
成分とするガラス質材料の粉末を混合したものをろう材
として、該ろう材中に超砥粒を分散してろう付け固着し
た下地層を備えたことを特徴とする。超砥粒のろう材と
して、Ａｇは融点が低くＣｕは焼結し易くいずれも導電
性がよく、更にＳｉＯ2を含むガラス質材料を用いるこ
とでろう材の融点を下げることができ、そのために８０
０℃程度の比較的低温での超砥粒のろう付けが可能にな
り、特にガラス質材料は酸化物であり超砥粒とのぬれ性
がよいから、人工ダイヤモンド等からなる超砥粒のグラ
ファイト化と不純物の欠落を抑制して、ウエーハ等の被
削材にスクラッチが発生するのを防止できる上に、超砥
粒のダメージを抑えてその保持力を高く維持できる。こ
こで、ガラス質とはガラス転移点を持つ物質であってＰ
Dガラス系等を金属粉末に入れると金属粉末の酸化物と
ＰDガラス系が反応してあたかも融点が下がったかのよ
うに見える。但し転移温度は４００℃以上である。The single-layer grindstone according to the present invention is obtained by mixing a vitreous material powder mainly composed of SiO 2 with Ag and Cu (Ag-Cu) powder as a brazing filler metal. And a base layer in which superabrasive grains are dispersed and brazed and fixed in the brazing material. As a superabrasive brazing material, Ag has a low melting point and Cu is easy to sinter, and all have good conductivity. Further, by using a glassy material containing SiO 2 , the melting point of the brazing material can be lowered. 80
Super-abrasive grains can be brazed at a relatively low temperature of about 0 ° C. In particular, the vitreous material is an oxide and has good wettability with the super-abrasive grains. In addition, it is possible to prevent the generation of scratches on the work material such as a wafer by suppressing the formation of impurities and the loss of impurities, and also to suppress the damage of the superabrasive grains and maintain the holding power thereof high. Here, vitreous is a substance having a glass transition point,
D When the glass system, etc. is placed in a metal oxide powder of the metal powder and P D glass system looks as if lowered react to as if the melting point. However, the transition temperature is 400 ° C. or higher.
【０００９】またろう材としてＡｇとＣｕの粉末に更に
Ｔｉ粉末が含まれていてもよい。Ｔｉはろう材の役割を
果たし、特に超砥粒とのぬれ性がよい。下地層の表面に
ＮｉまたはＮｉ合金からなる被覆層を電気めっきまたは
無電解めっきで形成してもよい。ろう材で超砥粒を分散
固着した下地層の表面にＮｉまたはＮｉ合金による被覆
層を被覆することで、研摩時にＡｇやＣｕ等がスラリに
融けてウエーハ等の被削材に被着して汚染するのを防止
でき、しかも比較的軟質なろう材からなる下地層の保持
力を高めることができる。またガラス質材料はろう材中
に１０〜２０ｗｔ％含まれていてもよい。ガラス質材料
が１０ｗｔ％より少ないと加熱ろう付け時の融点を下げ
られず、２０ｗｔ％より多いと導電性が低下して電気め
っきによる被覆層の形成が困難になる。[0009] As a brazing filler metal, Ag powder and Cu powder may further contain Ti powder. Ti plays the role of a brazing filler metal, and has particularly good wettability with superabrasives. A coating layer made of Ni or a Ni alloy may be formed on the surface of the underlayer by electroplating or electroless plating. By coating the coating layer of Ni or Ni alloy on the surface of the base layer where the superabrasive grains are dispersed and fixed with the brazing material, Ag and Cu melt into the slurry during polishing and adhere to the work material such as a wafer. Contamination can be prevented, and the holding power of the underlayer made of a relatively soft brazing material can be increased. The vitreous material may be contained in the brazing material in an amount of 10 to 20 wt%. If the amount of the vitreous material is less than 10 wt%, the melting point at the time of heating brazing cannot be lowered, and if it is more than 20 wt%, the conductivity is reduced and it becomes difficult to form a coating layer by electroplating.
【００１０】またろう材に五酸化バナジウムＶ2Ｏ5が１
ｗｔ％以下含まれていてもよい。五酸化バナジウムＶ2
Ｏ5は触媒の役割を果たし、１ｗｔ％以下の微量を添加
することでろう材の融点を下げると共にダイヤモンド等
の超砥粒の表面を溶かしてろう材との反応性を上げるこ
とができ、１ｗｔ％より多いとガスが発生する欠点があ
る。またろう材にＰ、Ｂの少なくともいずれかが３ｗｔ
％以下含まれていてもよい。ＰやＢを添加することでろ
う材の融点を下げることができ、３ｗｔ％を超えると脆
くなりすぎて形になりにくいという欠点がある。またろ
う材中のＡｇは６０〜８０ｗｔ％、Ｃｕは５〜１５ｗｔ
％の範囲で含まれていてもよい。Ａｇが８０ｗｔ％より
多いと超砥粒を所定位置に保持できず超砥粒が凝集する
という欠点があり、６０ｗｔ％より少ないと融点が高く
なるという欠点があり、Ｃｕが５ｗｔ％より多いと融点
が高くなるという欠点があり、１．５ｗｔ％より少ない
と超砥粒の保持力が低下し所定位置に保持できずに超砥
粒が凝集するという欠点がある。尚、ろう材の成分量は
全体で１００ｗｔ％になることはいうまでもない。また
超砥粒の下地層及び被覆層中への埋め込み深さが超砥粒
の平均粒径の８０〜９０％の範囲であってもよい。この
範囲であれば、超砥粒の保持力を高くして被削材の研摩
能力を確保できると共に超砥粒の露出量を抑えてスクラ
ッチや破砕片の発生を少なく抑えることができる。埋め
込み量が８０％より小さいと超砥粒が露出する割合が増
大して超砥粒に生じるスクラッチと破砕片が増え、研磨
時にパッド中に保持された破砕片のために被削材にスク
ラッチを生じる可能性が増大する。他方、埋め込み量が
９０％より大きいと研摩効率が低下する。またこの単層
砥石はＣＭＰ装置のパッドコンディショナとして特に好
適である。Further, vanadium pentoxide V 2 O 5 is contained in the brazing filler metal.
wt% or less may be contained. Vanadium pentoxide V 2
O 5 plays a role of a catalyst. By adding a trace amount of 1 wt% or less, the melting point of the brazing material can be lowered and the surface of superabrasive grains such as diamond can be dissolved to increase the reactivity with the brazing material. %, There is a disadvantage that gas is generated. In addition, at least one of P and B is 3 wt% in the brazing material.
% Or less. By adding P or B, the melting point of the brazing material can be lowered, and if it exceeds 3% by weight, there is a drawback that the material becomes too brittle to be easily formed. Ag in the brazing material is 60-80 wt%, and Cu is 5-15 wt%.
% May be included. If Ag is more than 80 wt%, the superabrasive grains cannot be held at a predetermined position, and there is a disadvantage that the superabrasive grains aggregate. If less than 60 wt%, the melting point becomes high. If Cu is more than 5 wt%, the melting point increases. When the amount is less than 1.5 wt%, the holding power of the superabrasive grains is reduced, and the superabrasive grains cannot be held at a predetermined position, and the superabrasive grains are aggregated. It goes without saying that the total amount of the components of the brazing material is 100 wt%. The embedding depth of the superabrasive grains in the underlayer and the coating layer may be in the range of 80 to 90% of the average grain size of the superabrasive grains. Within this range, the holding power of the superabrasive grains can be increased to secure the polishing ability of the work material, and the amount of exposure of the superabrasive grains can be suppressed to suppress generation of scratches and crushed pieces. If the embedding amount is less than 80%, the rate of exposure of the superabrasive grains increases, and the number of scratches and fragments generated in the superabrasive grains increases. The likelihood increases. On the other hand, if the filling amount is larger than 90%, the polishing efficiency is reduced. This single-layer grindstone is particularly suitable as a pad conditioner for a CMP apparatus.
【００１１】[0011]
【発明の実施の形態】以下、本発明の実施の形態を添付
図面により説明するが、上述の従来技術と同一の部分に
は同一の符号を用いて説明をする。図１は実施の形態に
よるホイールの部分縦断面図、図２は図１に示すホイー
ルの製作工程において台金に下地金属結合層を形成した
状態の部分縦断面図である。図１に示す実施の形態によ
るホイール２０（単層砥石）は、例えば略円板型の台金
２２の一面２２ａに略リング状をなす砥粒層２４が設け
られて構成されている。砥粒層２４は、台金２２上に固
着されたＡｇ−Ｃｕ−Ｔｉ系ろう材からなる下地金属結
合層２６（下地層）とその表面を被覆する被覆金属結合
層２８（被覆層）との二層で超砥粒３０が固着されて構
成されている。超砥粒３０は例えば人工ダイヤモンドか
らなるもので下地金属結合層２６に分散固着されてい
る。しかも超砥粒３０は砥粒層２４中に複数層に亘って
積層されることなく一層のみ分散して固着されており、
この砥粒層２４によってその平均粒径の８０〜９０％、
例えば８０％が埋め込まれている。更に超砥粒３０は下
地金属結合層２６によってその平均粒径の２５％程度が
埋め込まれ、残りは被覆金属結合層２８に埋め込まれて
いる。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings, in which the same portions as those of the above-described prior art will be described using the same reference numerals. FIG. 1 is a partial longitudinal sectional view of a wheel according to an embodiment, and FIG. 2 is a partial longitudinal sectional view of a state in which a base metal bonding layer is formed on a base in a manufacturing process of the wheel shown in FIG. The wheel 20 (single-layer grindstone) according to the embodiment shown in FIG. 1 is configured such that, for example, a substantially ring-shaped abrasive layer 24 is provided on one surface 22a of a substantially disk-shaped base metal 22. The abrasive layer 24 is composed of a base metal bonding layer 26 (base layer) made of an Ag-Cu-Ti brazing material fixed on the base metal 22 and a coating metal bonding layer 28 (coating layer) covering the surface thereof. The superabrasive grains 30 are fixed in two layers. The superabrasive grains 30 are made of, for example, artificial diamond and are dispersed and fixed to the underlying metal bonding layer 26. Moreover, the superabrasive grains 30 are dispersed and fixed only in one layer without being laminated in a plurality of layers in the abrasive grain layer 24,
80-90% of the average particle size by this abrasive layer 24,
For example, 80% is embedded. Further, the superabrasive grains 30 are buried by the base metal bonding layer 26 at about 25% of the average particle size, and the rest are buried in the coating metal bonding layer 28.
【００１２】ここで、下地金属結合層２４はＡｇとＣｕ
とＴｉからなる金属粉末にＳｉＯ2を主成分とするガラ
ス質材料の粉末を均一に混合したものを加熱して超砥粒
３０をろう付け固着している。ここで、ろう材中の各成
分の含有量はろう材全量に対してＡｇは６０〜８０ｗｔ
％、Ｃｕは５〜１５ｗｔ％、Ｔｉは１〜５ｗｔ％であ
り、ガラス質材料を含めて全体で１００ｗｔ％になるよ
うに上記範囲で適宜量が選定される。ここでＡｇは融点
が低くぬれ性と導電性がよく、Ｃｕは焼結し易く導電性
がよい。Ｔｉはダイヤモンドとのぬれ性が良くろう材と
しての役割を果たすが、省略されていてもよい。またＡ
ｇが８０ｗｔ％より多いと超砥粒３０を所定の位置に保
持できずに超砥粒が凝集するという欠点があり、６０ｗ
ｔ％より少ないと融点が上昇しすぎるという欠点があ
り、Ｃｕが１５ｗｔ％より多いと融点が高くなって超砥
粒３０のダメージが生じるという欠点があり、５ｗｔ％
より少ないと超砥粒３０を保持する能力が低下し超砥粒
が凝集するという欠点がある。Ｔｉは１ｗｔ％より少な
いと超砥粒３０との濡れ性が悪くなるという欠点があ
り、５ｗｔ％より多いとボンド割れが起こり偏析等が生
じるという欠点がある。更にこのろう材中に含まれるＳ
ｉＯ2を含むガラス質材料は、ろう材の融点を下げる働
きをなし、ガラス系の酸化物であるためにぬれ性がよ
い。このガラス質材料はろう材中に１０〜２０ｗｔ％含
まれている。ガラス質材料が１０ｗｔ％より少ないと融
点を下げる効果を発揮できず金属ろう材が固着しにくく
なる欠点があり、２０ｗｔ％を超えると導電性が低下し
て電気めっきで被覆金属結合層２８を形成できなくな
り、下地金属結合層２６の強度を低下させることにな
る。Here, the base metal bonding layer 24 is made of Ag and Cu.
Superabrasives 30 are brazed and fixed by heating a mixture of a powder of a vitreous material containing SiO 2 as a main component and a metal powder of Ti and Ti. Here, the content of each component in the brazing material is such that Ag is 60 to 80 wt.
%, Cu is 5 to 15 wt%, and Ti is 1 to 5 wt%, and the amount is appropriately selected within the above range so that the total amount is 100 wt% including the vitreous material. Here, Ag has a low melting point and good wettability and conductivity, and Cu easily sinters and has good conductivity. Ti has good wettability with diamond and plays a role as a brazing filler metal, but may be omitted. Also A
If g is more than 80 wt%, there is a disadvantage that the superabrasive grains 30 cannot be held at a predetermined position and the superabrasive grains aggregate.
If it is less than t%, there is a disadvantage that the melting point is too high, and if it is more than 15 wt%, there is a disadvantage that the melting point becomes high and the superabrasive 30 is damaged, and 5 wt%.
If the amount is smaller, the ability to hold the superabrasive grains 30 is reduced, and the superabrasive grains are disadvantageously aggregated. If Ti is less than 1 wt%, the wettability with the superabrasive grains 30 is deteriorated. If it is more than 5 wt%, bond cracks occur and segregation is caused. Further, S contained in this brazing material
The vitreous material containing iO 2 has a function of lowering the melting point of the brazing material, and has good wettability because it is a glass-based oxide. This vitreous material is contained in the brazing material in an amount of 10 to 20% by weight. If the glassy material is less than 10 wt%, the effect of lowering the melting point cannot be exerted, and the brazing metal is difficult to adhere. If it exceeds 20 wt%, the conductivity is reduced, and the coated metal bonding layer 28 is formed by electroplating. No longer, the strength of the underlying metal bonding layer 26 is reduced.
【００１３】尚、ろう付けに際してろう材と超砥粒３０
との化学反応のための触媒として五酸化バナジウムＶ2
Ｏ5を微量、例えば１ｗｔ％程度ろう材の混合粉末に添
加してもよい。Ｖ2Ｏ5はろう材の融点を下げると共にダ
イヤモンド等の超砥粒３０を溶かしてろう材との反応性
を上げる役割を果たす。添加量が１ｗｔ％を超えるとガ
スが発生する欠点があるので、１ｗｔ％以下にする。ま
た五酸化バナジウムＶ2Ｏ5に代えて、或いは／Ｖ2Ｏ5と
共にＰやＢを各３ｗｔ％以下程度ろう材に添加してもよ
い。ＰやＢはろう材の融点を下げる役割を果たす。また
下地金属結合層２６上に被覆形成する被覆金属結合層２
８はＮｉまたはＮｉ合金からなり、下地金属結合層２６
上に電気めっきで形成してもよいし、無電解めっきで形
成してもよい。下地金属結合層２６中のガラス質材料を
１０〜２０ｗｔ％の範囲に抑えることで導電性を確保で
きて、被覆金属結合層２８の電気めっきを容易に行え
る。ＮｉまたはＮｉ合金で被覆金属結合層２８を形成す
ることで、研摩時に下地金属結合層２６がスラリに接触
してＡｇやＣｕ等の金属が溶出してウエーハを汚染する
のを防止できる。しかも強度の高いＮｉまたはＮｉ基合
金で被覆することで下地金属結合層２６の超砥粒の保持
力と台金２２に対する密着性を確保することができる。When brazing, the brazing material and the superabrasive grains 30 are used.
V 2 as a catalyst for the chemical reaction with
O 5 may be added to a trace amount, for example, about 1 wt% of the mixed powder of the brazing filler metal. V 2 O 5 plays a role in lowering the melting point of the brazing filler metal and increasing the reactivity with the brazing filler metal by dissolving the superabrasive grains 30 such as diamond. If the addition amount exceeds 1 wt%, there is a drawback that gas is generated, so the content is set to 1 wt% or less. Further, P or B may be added to the brazing material in an amount of about 3 wt% or less in place of vanadium pentoxide V 2 O 5 or together with / V 2 O 5 . P and B play a role in lowering the melting point of the brazing material. The coated metal bonding layer 2 formed on the underlying metal bonding layer 26
8 is made of Ni or a Ni alloy,
It may be formed by electroplating or electroless plating. By controlling the amount of the vitreous material in the base metal bonding layer 26 to be in the range of 10 to 20 wt%, the conductivity can be secured, and the electroplating of the coating metal bonding layer 28 can be easily performed. By forming the coated metal bonding layer 28 with Ni or a Ni alloy, it is possible to prevent the metal such as Ag or Cu from being eluted by the base metal bonding layer 26 coming into contact with the slurry during polishing and contaminating the wafer. In addition, by coating with high-strength Ni or a Ni-based alloy, the holding power of the superabrasive grains of the base metal bonding layer 26 and the adhesion to the base metal 22 can be secured.
【００１４】本実施の形態によるホイール２０は上述の
構成を有しており、次にこのホイール２０の製作方法に
ついて説明する。先ずＡｇ、Ｃｕ、Ｔｉの各粉末を例え
ば６４ｗｔ％、１５ｗｔ％、５ｗｔ％、触媒としてＶ2
Ｏ5を１ｗｔ％（更にＰやＢを各３ｗｔ％程度添加して
もよい）添加し、そしてＳｉＯ2を主成分とするガラス
質材料を例えば１５ｗｔ％を均一に混合してろう材と
し、このろう材を例えば厚さ５０〜１００μｍのシート
状に延ばし、その上に所定間隔で例えば人工ダイヤモン
ドからなる超砥粒３０を一層配列する。或いはシート状
のろう材に所定間隔で小孔を開けて各小孔内に超砥粒３
０を配設する。そして真空中または窒素（アルゴン）ガ
ス雰囲気中で８００℃程度に加熱して焼結する。これに
よって超砥粒３０はＶ2Ｏ5を触媒としてろう材と接触す
る表面が溶けてろう材と化学反応を起こしてろう付けさ
れる。その際、ろう材はＴｉ、Ｂ、Ｐ等によって融点が
下がり超砥粒３０とのぬれ性がよくしかも強固に固着さ
れる。The wheel 20 according to the present embodiment has the above-described configuration. Next, a method of manufacturing the wheel 20 will be described. First, each of Ag, Cu, and Ti powders is, for example, 64 wt%, 15 wt%, 5 wt%, and V 2 as a catalyst.
O 5 was added 1 wt% (more may be added about the 3 wt% of P and B), and the brazing material by mixing a glass material for the SiO 2 as a main component such as 15 wt% uniformly, the The brazing material is stretched into a sheet having a thickness of, for example, 50 to 100 μm, and super abrasive grains 30 made of, for example, artificial diamond are further arranged at predetermined intervals on the brazing material. Alternatively, small holes are formed at predetermined intervals in a sheet-like brazing material, and superabrasive grains 3 are provided in each small hole.
0 is arranged. Then, sintering is performed by heating to about 800 ° C. in a vacuum or a nitrogen (argon) gas atmosphere. As a result, the surface of the superabrasive 30 that comes into contact with the brazing material is melted using V 2 O 5 as a catalyst, causing a chemical reaction with the brazing material and brazing. At this time, the melting point of the brazing material is reduced by Ti, B, P, etc., so that the brazing material has good wettability with the superabrasive grains 30 and is firmly fixed.
【００１５】このようにして図２に示すように下地ろう
材である下地金属結合層２６に一層の超砥粒３０が部分
的、例えば平均粒径の２５％程度埋め込まれたホイール
２０′が形成される。そして更に下地金属結合層２６の
表面に電気めっきによってＮｉまたはＮｉ合金を析出さ
せて被覆金属結合層２８を形成する。或いは無電解めっ
きによって下地金属結合層２６の表面に被覆金属結合層
２８を形成してもよい。各超砥粒３０は砥粒層２４によ
って平均粒径の８０％程度が埋め込まれている。これに
よって図１に示すホイール２０を製作できる。In this manner, as shown in FIG. 2, a wheel 20 'in which one layer of superabrasive grains 30 is partially embedded, for example, about 25% of the average grain size, in the underlying metal bonding layer 26 as the underlying brazing material is formed. Is done. Further, Ni or a Ni alloy is deposited on the surface of the base metal bonding layer 26 by electroplating to form the coated metal bonding layer 28. Alternatively, the coated metal bonding layer 28 may be formed on the surface of the base metal bonding layer 26 by electroless plating. About 80% of the average particle size of each superabrasive 30 is embedded by the abrasive layer 24. Thereby, the wheel 20 shown in FIG. 1 can be manufactured.
【００１６】このようにして得られたホイール２０を用
いて、ＣＭＰ装置１でパッド４によってウエーハ６の研
摩を行いつつ、パッド４上の他の領域でホイール２０を
当接させてパッド４のコンディショニングを行う。この
場合、ホイール２０の人工ダイヤモンドからなる超砥粒
３０はろう付けに際して焼結温度が８００℃程度に抑え
られているから超砥粒３０のグラファイト化が抑えら
れ、そのために研磨時に不純物の脱落が抑えられ、超砥
粒３０自体のスクラッチの発生が少なく、破砕片が超砥
粒３０から脱落するのを抑えられる。しかも約８０％が
砥粒層２４で埋め込まれているから、この点からもコン
ディショニング時に超砥粒３０が微細に破砕されること
が抑制され、パッド４上の破砕物によってウエーハ６に
スクラッチが発生するのを抑制できる。またパッド４上
のスラリがＮｉまたはＮｉ基合金による被覆金属結合層
２８によってホイール２０の下地金属結合層２６に接触
するのを防止でき下地金属結合層２６の金属がスラリで
溶出するのを防止できる。Using the wheel 20 thus obtained, while polishing the wafer 6 with the pad 4 by the CMP apparatus 1, the wheel 20 is brought into contact with another area on the pad 4 to condition the pad 4. I do. In this case, since the sintering temperature of the super-abrasive grains 30 made of artificial diamond of the wheel 20 is suppressed to about 800 ° C. during brazing, the super-abrasive grains 30 are suppressed from being graphitized, so that impurities are removed during polishing. Scratch of the superabrasive grains 30 itself is reduced, and crushed pieces can be prevented from falling off the superabrasive grains 30. Moreover, since about 80% is buried in the abrasive layer 24, the fine crushing of the superabrasive grains 30 during conditioning is suppressed from this point, and the wafer 6 is scratched by the crushed material on the pad 4. Can be suppressed. Also, the slurry on the pad 4 can be prevented from contacting the base metal bonding layer 26 of the wheel 20 by the coated metal bonding layer 28 of Ni or a Ni-based alloy, and the metal of the base metal bonding layer 26 can be prevented from being eluted by the slurry. .
【００１７】上述のように本実施の形態によるホイール
２０は、従来のメタルろう付けによるホイールと比較し
て低融点のろう付けによる超砥粒３０の固着を行えて加
熱による超砥粒３０のグラファイト化を抑えて超砥粒３
０自体にスクラッチが生じる等のダメージを抑制でき、
研磨時にパッド４上に保持された破砕片によってウエー
ハ６にスクラッチが生じるのを抑制できる。しかもダイ
ヤモンドによる超砥粒３０とろう材とのぬれ性がよく強
固な固着が行え、ろう材による下地金属結合層２６の上
にＮｉまたはＮｉ合金による被覆金属結合層２８を形成
したから、下地金属結合層２６の超砥粒３０及び台金２
２との保持力を増強して下地金属結合層２６がスラリに
接触して金属が溶出してウエーハ６等が汚染されるのを
防止できる。As described above, the wheel 20 according to the present embodiment can fix the superabrasive grains 30 by brazing with a lower melting point compared to a conventional wheel by metal brazing, and heat the superabrasive grains 30 by heating. Super abrasive grains 3
0 can suppress damage such as scratching itself,
The generation of scratches on the wafer 6 due to the crushed pieces held on the pad 4 during polishing can be suppressed. In addition, the superabrasive grains 30 made of diamond and the brazing material have good wettability and can be firmly fixed, and the coated metal binding layer 28 made of Ni or a Ni alloy is formed on the underlying metal binding layer 26 made of the brazing material. Super abrasive grains 30 and base metal 2 of bonding layer 26
Thus, it is possible to prevent the base metal binding layer 26 from coming into contact with the slurry to elute the metal and contaminate the wafer 6 and the like.
【００１８】また本発明の単層砥石はＣＭＰ装置に用い
るコンディショナ以外にも研磨研摩装置に採用できるこ
とはいうまでもない。Further, it goes without saying that the single-layer grindstone of the present invention can be employed in a polishing and polishing apparatus in addition to a conditioner used in a CMP apparatus.
【００１９】[0019]
【発明の効果】上述したように本発明に係る単層砥石
は、ＡｇとＣｕの粉末にＳｉＯ2を主成分とするガラス
質材料の粉末を混合したものをろう材として、該ろう材
中に超砥粒を分散してろう付け固着した下地層を備えた
から、ＳｉＯ2を含むガラス質材料を用いることでろう
材の融点を下げることができ、そのために８００℃程度
の低温での超砥粒のろう付け固着が可能になり、特にガ
ラス質材料は酸化物であり超砥粒とのぬれ性がよいた
め、人工ダイヤモンド等からなる超砥粒のグラファイト
化を抑制して不純物の欠落によって被削材にスクラッチ
が発生するのを防止でき、また超砥粒のダメージを抑え
てその保持力を高く維持できる。As described above, the single-layer grindstone according to the present invention uses a mixture of Ag and Cu powders mixed with a vitreous material powder mainly composed of SiO 2 as a brazing material. Since the base layer is provided with the superabrasive particles dispersed and brazed and fixed, the melting point of the brazing material can be lowered by using a vitreous material containing SiO 2, and therefore, the superabrasive particles at a low temperature of about 800 ° C. In particular, since the vitreous material is an oxide and has good wettability with superabrasive grains, it suppresses the graphitization of superabrasive grains made of artificial diamond etc. The generation of scratches on the material can be prevented, and the holding force of the super-abrasive grains can be kept high by suppressing the damage of the super-abrasive grains.
【００２０】またろう材としてＡｇとＣｕの粉末に更に
Ｔｉ粉末が含まれているから、Ｔｉがろう材の役割を果
たし、特に超砥粒とのぬれ性がよい。下地層の表面にＮ
ｉまたはＮｉ基合金からなる被覆層を電気めっきまたは
無電解めっきで形成したから、研摩時に下地層の金属成
分であるＡｇやＣｕ等がスラリに溶出してウエーハ等の
被削材に被着するのを防止でき、しかも比較的軟質なろ
う材からなる下地層の保持力をＮｉまたはＮｉ基合金で
高めることができる。またガラス質材料はろう材中に１
０〜２０ｗｔ％含まれているから、ろう材の融点を下げ
ると共にろう材からなる下地層の導電性を確保でき、ガ
ラス質材料が１０ｗｔ％より少ないと加熱ろう付け時の
融点を下げられず、２０ｗｔ％より多いと導電性が低下
して電気めっきによる被覆層の形成が困難になる。Since the Ag and Cu powders further contain Ti powder as a brazing filler metal, Ti plays a role as a brazing filler metal, and has particularly good wettability with superabrasive grains. N on the surface of the underlayer
Since the coating layer made of i or Ni-based alloy is formed by electroplating or electroless plating, the metal components of the underlying layer, such as Ag and Cu, elute into the slurry during polishing and adhere to the work material such as a wafer. And the holding power of the underlayer made of a relatively soft brazing material can be increased by Ni or a Ni-based alloy. In addition, vitreous material is contained in brazing material.
Since it is contained in an amount of 0 to 20 wt%, the melting point of the brazing material can be reduced and the conductivity of the underlayer made of the brazing material can be secured. If the vitreous material is less than 10 wt%, the melting point at the time of heating brazing cannot be lowered, If the content is more than 20 wt%, the conductivity is lowered, and it becomes difficult to form a coating layer by electroplating.
【００２１】またろう材に五酸化バナジウムＶ2Ｏ5が１
ｗｔ％以下含まれているから、五酸化バナジウムＶ2Ｏ5
が触媒の役割を果たし、１ｗｔ％以下の微量を添加する
ことでろう材の融点を下げると共にダイヤモンド等の超
砥粒の表面を溶かしてろう材との反応を上げることがで
き、１ｗｔ％より多いとガスが発生する欠点がある。ま
たろう材にＰ、Ｂの少なくともいずれかが３ｗｔ％以下
含まれているから、ＰやＢを添加することでろう材の融
点を下げることができ、３ｗｔ％を超えると偏析が起こ
りボンド割れが起こるという欠点がある。またろう材中
のＡｇは６０〜８０ｗｔ％、Ｃｕは５〜１．５ｗｔ％の
範囲で含まれているため、Ａｇが８０ｗｔ％より多いと
超砥粒を所定位置に保持できず超砥粒が凝集したりする
という欠点があり、６０ｗｔ％より少ないと超砥粒との
濡れ性が悪くなり融点が高くなるという欠点があり、Ｃ
ｕが１５ｗｔ％より多いと融点が高くなり超砥粒が劣化
するという欠点があり、５ｗｔ％より少ないと超砥粒を
所定位置に保持できず超砥粒が凝集するという欠点があ
る。また超砥粒の下地層及び被覆層中への埋め込み深さ
が超砥粒の平均粒径の８０〜９０％の範囲であるから、
超砥粒の保持力を高くして被削材の研摩能力を確保でき
ると共に超砥粒のスクラッチを少なく抑えることができ
る。８０％より小さいと超砥粒のスクラッチが露出する
割合が増大して被削材にスクラッチを生じる可能性が増
大し、９０％より大きいと研摩効率が低下する。Vanadium pentoxide V 2 O 5 is one in the brazing material.
wt% or less, vanadium pentoxide V 2 O 5
Plays the role of a catalyst, and by adding a trace amount of 1 wt% or less, the melting point of the brazing material can be lowered, and the surface of superabrasive grains such as diamond can be melted to increase the reaction with the brazing material. This has the disadvantage of generating gas. Further, since at least one of P and B is contained in the brazing material in an amount of 3 wt% or less, the melting point of the brazing material can be lowered by adding P or B, and if it exceeds 3 wt%, segregation occurs and bond cracking occurs. The disadvantage is that it happens. In addition, since Ag in the brazing material is contained in the range of 60 to 80 wt% and Cu in the range of 5 to 1.5 wt%, if the Ag is more than 80 wt%, the superabrasive grains cannot be held at a predetermined position, and When the amount is less than 60 wt%, the wettability with superabrasive grains deteriorates, and the melting point increases.
If u is more than 15 wt%, the melting point becomes high and the superabrasive grains deteriorate, and if less than 5 wt%, the superabrasive grains cannot be held at a predetermined position and the superabrasive grains aggregate. Also, since the depth of embedding of the superabrasive grains in the underlayer and the coating layer is in the range of 80 to 90% of the average grain size of the superabrasive grains,
By increasing the holding power of the superabrasive grains, the polishing ability of the work material can be secured, and the scratches of the superabrasive grains can be reduced. If it is less than 80%, the rate at which the scratches of the superabrasive grains are exposed increases, and the possibility of scratching the work material increases. If it is more than 90%, the polishing efficiency decreases.
【図１】 本発明の実施の形態によるホイールの部分縦
断面図である。FIG. 1 is a partial longitudinal sectional view of a wheel according to an embodiment of the present invention.
【図２】 図１に示すホイールの製作工程において下地
金属結合層を形成した状態を示す図１と同様な部分縦断
面図である。FIG. 2 is a partial longitudinal sectional view similar to FIG. 1, showing a state in which a base metal bonding layer is formed in a manufacturing process of the wheel shown in FIG. 1;
【図３】 従来のＣＭＰ装置の要部斜視図である。FIG. 3 is a perspective view of a main part of a conventional CMP apparatus.
【図４】 図３に示すホイールの砥粒層を示す要部拡大
断面図である。FIG. 4 is an enlarged sectional view of a main part showing an abrasive layer of the wheel shown in FIG. 3;
２０ ホイール ２２ 台金 ２４ 砥粒層 ２６ 下地金属結合層（下地層） ２８ 被覆金属結合層（被覆層） ３０ 超砥粒 Reference Signs List 20 wheel 22 base metal 24 abrasive layer 26 base metal bonding layer (base layer) 28 coated metal bonding layer (coating layer) 30 superabrasive
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｈ０１Ｌ 21/304 ６２２ Ｈ０１Ｌ 21/304 ６２２Ｆ (72)発明者 尾久 雅治 福島県いわき市泉町黒須野字江越246−１ 三菱マテリアル株式会社いわき製作所内 Ｆターム(参考） 3C047 EE18 EE19 3C063 AA02 AB07 BA02 BA37 BB02 BC02 BC08 CC09 CC13 EE10 EE26 FF22 FF23 ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (Reference) H01L 21/304 622 H01L 21/304 622F (72) Inventor Masaharu Oku 246 Egoshi Kurosuno Izumicho Iwaki-shi, Fukushima Prefecture -1 Mitsubishi Materials Corporation Iwaki Works F term (reference) 3C047 EE18 EE19 3C063 AA02 AB07 BA02 BA37 BB02 BC02 BC08 CC09 CC13 EE10 EE26 FF22 FF23
Claims (8)
するガラス質材料の粉末を混合したものをろう材とし
て、該ろう材に超砥粒を分散してろう付け固着した下地
層を備えた単層砥石。1. A brazing material comprising a mixture of Ag and Cu powders mixed with a vitreous material powder mainly composed of SiO 2 , wherein a superabrasive is dispersed in the brazing material, and an underlayer is fixed by brazing. Single-layer whetstone provided.
にＴｉが含まれていることを特徴とする請求項１記載の
単層砥石。2. The single-layer grinding wheel according to claim 1, wherein the brazing material further contains Ti in Ag and Cu powder.
からなる被覆層を電気めっきまたは無電解めっきで形成
したことを特徴とする請求項１または２記載の単層砥
石。3. The single-layer grindstone according to claim 1, wherein a coating layer made of Ni or a Ni alloy is formed on the surface of the underlayer by electroplating or electroless plating.
０ｗｔ％含まれていることを特徴とする請求項１乃至３
のいずれか記載の単層砥石。4. The vitreous material contains 10 to 2 in the brazing material.
4. The composition according to claim 1, wherein the content is 0 wt%.
The single-layer whetstone according to any one of the above.
１ｗｔ％以下含まれていることを特徴とする請求項１乃
至４のいずれか記載の単層砥石。5. The single-layer grinding wheel according to claim 1, wherein the brazing material contains 1 wt% or less of vanadium pentoxide V 2 O 5 .
かが３ｗｔ％以下含まれていることを特徴とする請求項
１乃至５のいずれか記載の単層砥石。6. The single-layer grinding wheel according to claim 1, wherein the brazing material contains at least one of P and B in an amount of 3 wt% or less.
％、Ｃｕは５〜１５ｗｔ％の範囲で含まれていることを
特徴とする請求項１乃至６のいずれか記載の単層砥石。7. Ag in the brazing material is 60 to 80 wt.
%, And Cu is contained in the range of 5 to 15 wt%. The single-layer grindstone according to claim 1, wherein
め込み深さが超砥粒の平均粒径の８０〜９０％の範囲で
あることを特徴とする請求項３乃至７のいずれか記載の
単層砥石。8. The super-abrasive grains according to claim 3, wherein a depth of embedding the super-abrasive grains in the underlayer and the coating layer is in the range of 80 to 90% of the average grain size of the super-abrasive grains. Or a single-layer whetstone as described.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000354147A JP2002160168A (en) | 2000-11-21 | 2000-11-21 | Single layer grinding wheel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000354147A JP2002160168A (en) | 2000-11-21 | 2000-11-21 | Single layer grinding wheel |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2002160168A true JP2002160168A (en) | 2002-06-04 |
Family
ID=18826796
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000354147A Pending JP2002160168A (en) | 2000-11-21 | 2000-11-21 | Single layer grinding wheel |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002160168A (en) |
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| JP2002205272A (en) * | 2001-01-09 | 2002-07-23 | Asahi Diamond Industrial Co Ltd | Super abrasive grain tool and its manufacturing method |
| JP2005288685A (en) * | 2004-03-10 | 2005-10-20 | Read Co Ltd | Dresser for polishing cloth, and manufacturing method thereof |
| JP2007167997A (en) * | 2005-12-20 | 2007-07-05 | Toyoda Van Moppes Ltd | Truing tool |
| JP2009196057A (en) * | 2008-02-25 | 2009-09-03 | Murata Mfg Co Ltd | Thin-bladed whetstone and its manufacturing method |
| JP2010105060A (en) * | 2008-10-28 | 2010-05-13 | Osaka Prefecture | Super abrasive grain wheel and discharge truing method or truing-dressing method for super abrasive grain wheel |
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| CN103786100A (en) * | 2014-02-26 | 2014-05-14 | 禹州市和汇超硬材料有限公司 | Method for manufacturing brazing monolayer diamond grinding wheel |
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| JP2017052019A (en) * | 2015-09-07 | 2017-03-16 | 新日鉄住金マテリアルズ株式会社 | Dresser for abrasive cloth |
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| JP2002205272A (en) * | 2001-01-09 | 2002-07-23 | Asahi Diamond Industrial Co Ltd | Super abrasive grain tool and its manufacturing method |
| JP2005288685A (en) * | 2004-03-10 | 2005-10-20 | Read Co Ltd | Dresser for polishing cloth, and manufacturing method thereof |
| JP2007167997A (en) * | 2005-12-20 | 2007-07-05 | Toyoda Van Moppes Ltd | Truing tool |
| JP2009196057A (en) * | 2008-02-25 | 2009-09-03 | Murata Mfg Co Ltd | Thin-bladed whetstone and its manufacturing method |
| JP2010105060A (en) * | 2008-10-28 | 2010-05-13 | Osaka Prefecture | Super abrasive grain wheel and discharge truing method or truing-dressing method for super abrasive grain wheel |
| CN103770027A (en) * | 2014-01-10 | 2014-05-07 | 当涂县南方红月磨具磨料有限公司 | Ceramic boron carbide grinding wheel |
| CN103831735A (en) * | 2014-02-11 | 2014-06-04 | 当涂县南方红月磨具磨料有限公司 | Ceramic chrome corundum grinding wheel |
| CN103786100A (en) * | 2014-02-26 | 2014-05-14 | 禹州市和汇超硬材料有限公司 | Method for manufacturing brazing monolayer diamond grinding wheel |
| CN103786100B (en) * | 2014-02-26 | 2015-12-30 | 禹州市和汇超硬材料有限公司 | A kind of preparation method of Furnace Brazing of Diamond Grinding Wheel With Ni |
| JP2017052019A (en) * | 2015-09-07 | 2017-03-16 | 新日鉄住金マテリアルズ株式会社 | Dresser for abrasive cloth |
| CN107042475A (en) * | 2017-05-27 | 2017-08-15 | 江苏赛扬精工科技有限责任公司 | A kind of universal joint alley mill nano-grade ceramic binding agent cBN emery wheels and preparation method thereof |
| CN109227411A (en) * | 2018-09-27 | 2019-01-18 | 河南工业大学 | A kind of environment-friendly resin cymbal abrasive wheel |
| TWI718755B (en) * | 2019-05-23 | 2021-02-11 | 國立臺灣科技大學 | Diamond cutter and its manufacturing method |
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| CN115502501A (en) * | 2022-10-25 | 2022-12-23 | 苏州科技大学 | Method for vacuum brazing of diamond abrasive particles by copper-based brazing filler metal |
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